201025434 六、發明說明： 【發明所屬之技術領域】 本發明係有關於半導體裝置之製造技術，特别係有關 於一種形成有介電膠層之晶粒製造方法。 【先前技術】 在半導體產業中，半導體封裝構造的生產，主要分為 三個階段：晶圓的製造、晶片結構的形成以及晶片結構 ❹的封裝等。在晶圓的製造與晶片結構的形成的過程中， 希望在晶圓上形成一介電膠層，以供黏晶或是達到晶圓 級封裝。其中，介電膠層在形成於晶圓之塑態可以使用 如B階膠片之固態薄膜或者是如環氧化物之液態膠體， 然而薄膜的價格較咼。故目前仍是採液態膠體塗施於晶 圓上，例如可利用網印方式形成在晶圓之背面上，但其 實施容易有晶圓汙染之問題。 、 第1圖為習知形成有介電膠層之晶粒製造方法之方 ®塊流程圖。在步称1中，提供一晶圓。在步驟2中，使 保護膠帶貼附於晶圓之主動袅 動表面，利用保護膠帶保護主 動表面不受到液態塗施的介電 「电膠材料汙染。步驟3是翻 轉晶圓，使晶圓之背面朝上外 ,'.〇 , 撂在步驟4中，採用網 印或已知的液態塗施方法將一 力電膝層形成於晶圓之昔 面，介電膠層的覆蓋面積應小 ^ 流到晶圓之侧邊，甚至沾黏到保 先益 ^ 』保硬膠帶。並經過步驟5， 使介電膠層加熱固化，必須遠 4達到足夠的乾燥與固化鋥 度，以避免在步驟6中嚴重溢腰 '益膠，同時使晶圓被加熱， 201025434 加熱固化後之介電膠層會產生固化收縮，並且在尺寸與 熱膨脹係數的比對下，介電膠層與晶圓有不匹配的問 題。另’可在步驟6中翻轉晶圓使晶圓之背面朝下壓合 至一切割膠帶，藉由切割膠帶的黏性，以使介電膠層貼 附於切割膠帶。之後，在步驟7中，去除保護膠帶，使 晶片之主動表面為外露。之後，在步驟"，切割晶圓 為複數個晶粒。最後的步驟9中，由該切㈣帶取出晶 粒。因此’晶圓會經過多次加熱，並且晶圓與介電膠層 的熱膨脹係數與尺寸為不匹配又受到介電膠層的固化收 縮等景y響產生晶圓起曲（wafer warp age)的問題，導致 後續的晶圓處理之困難。此外，由於需要多次翻轉晶圓 等晶圓處理步驟會有良率降低與成本增加之風險。若不 翻轉並使主動面外露，其必須由晶圓之背面進行切割， 則產生另一種無法以切割線定位晶圓的問題。 【發明内容】 φ 為了解決上述之問題，本發明之主要目的係在於提供 一種形成有介電膠層之晶粒製造方法，藉以解決習知介 電膠層汙染晶圓主動表面以及為了形成介電膠層以多次 加熱晶圓方式與熱膨脹係數不匹配等不利因素導致晶圓 翹曲的問題’並可減少需要翻轉晶圓等晶圓處理步驟， 以符合高良率低成本之製程要求。 本發月之欠目的係在於提供一種形成有介電.勝層 之晶粒製造方法’藉以解決習知由晶圓之主動表面進行 切割需要晶圓翻轉導致受損《是由晶圓之背面進行切割 201025434 無法以切割線定位晶圓的問題，以提升製程之便利性。 本發明的目的及解決其技術問題是採用以下技術方 案來實現的。本發明揭示一種形成有介電膠層之晶粒製 造方法，主要包含以下步驟：提供一切割膠帶。形成一 液態介電膠層於該切割膠帶上。加熱使該液態介電膠層 呈膠稠態。貼合一晶圓至已形成在該切割膠帶上之該介 電膠層。切割該晶圓以形成複數個晶粒，每一晶粒係可 形成有該介電膠層之一部分。以及取出該些晶粒，並使 參該介電膠層形成於該些晶粒之對應部分由該切割膠帶產 生剝離。 本發明的目的及解決其技術問題還可採用以下技術 措施進一步實現。 在前述的晶粒製造方法中，在貼合該晶圓之步驟中， 該切割膠帶係可被吸附在一平台上，以調整該介電膠層 為水平狀。 參在前述的晶粒製造方法中’該平台係可為一加熱板， 以在貼合該晶圓時同時加熱該介電膠層。 在前述的晶粒製造方法中，在使該液態介電膠層呈膠 稠態之步驟中，係可藉由該平台加熱該液態介電膠層。 在前述的晶粒製造方法中，在形成該液態介電膠層之 步驟中’該介電勝層係可利用網印方式形成在該切割膠 帶上。 在前述的晶粒製造方法中，在形成該液態介電膠層之 步驟主要可包含：放置一模板於該切割膠帶上；以及利 201025434 用一刮刀刮刷一液態介電膠至該模板内’以形成該液態 介電膝層。 在前述的晶粒製造方法中，該液態介電膠層係可具有 一邱刷圖案，係不小於該晶圓之貼合面面積。 在前述的晶粒製造方法中，在提供該切割膠帶之步驟 中’該切割膠帶之周邊係可貼附於一 〇型固定環。 在前述的晶粒製造方法中，在形成該液態介電膠層之 ❹步驟中，該介電膠層係可利用旋塗（spin coating)方式形 成在該切割膠帶上。 在前述的晶粒製造方法中，在形成該液態介電膠層之 步驟可包含：吸附該切割膠帶至一旋塗載台上；以及點 塗一液態介電膠於該旋塗载台之中心並旋轉該旋塗載 台’以形成該液態介電膠層。 在前述的晶粒製造方法中，在形成該液態介電膠層之 步驟之後，可另包含：貼附一 〇型固定環於該切割膠帶 ❹ 之周邊。 ，在前述的晶粒製造方法中，該旋塗載台係可具有一環 形凹槽，其位於該晶圓之外與該ο型固定環之内。 在前述的晶粒製造方法中，該介電膠層係可具有多階 段熱固化特性’並在取出該些晶粒之後，該介電膠層仍 具有黏性。 在前述的晶粒製造方法中，在降低該切割膠帶之黏性 之步驟之後’可另包含：加熱以固化該介電膠層。 在刖述的曰曰粒製造方法中’該切割膠帶係可為藍膜 201025434 UV 膠帶（blue tape)。 在前述的晶粒製造 ^ A m 万去中，在切割該晶圓之步驟之後 與在上述取出該些晶粒 电丨之步驟之前’另包含：降低該切 割膠帶之黏性。 θ Θ刀 在前述的晶粒製造大 層之貼合表面係可為—背面。’該Βθ圓用以形成該介電膠201025434 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a manufacturing technique of a semiconductor device, and more particularly to a method of fabricating a die formed with a dielectric adhesive layer. [Prior Art] In the semiconductor industry, the production of semiconductor package structures is mainly divided into three stages: wafer fabrication, wafer structure formation, and wafer structure package. During the fabrication of the wafer and the formation of the wafer structure, it is desirable to form a dielectric layer on the wafer for die bonding or wafer level packaging. Wherein, the dielectric layer can be formed into a solid state film such as B-stage film or a liquid colloid such as epoxide in the plastic state formed on the wafer, but the price of the film is relatively low. Therefore, liquid colloid is still applied to the crystal circle, for example, it can be formed on the back surface of the wafer by screen printing, but the implementation is easy to have the problem of wafer contamination. Figure 1 is a block diagram of a conventional method for fabricating a die having a dielectric adhesive layer. In step 1, a wafer is provided. In step 2, the protective tape is attached to the active swaying surface of the wafer, and the protective surface is used to protect the active surface from the dielectric coating of the dielectric material. Step 3 is to flip the wafer to make the wafer The back side is facing up, '.〇, 撂In step 4, using a screen printing or a known liquid application method to form a force knee layer on the wafer surface, the coverage area of the dielectric glue layer should be small ^ Flow to the side of the wafer, and even adhere to the protective tape. After step 5, the dielectric layer is heated and cured, and must be far enough to achieve sufficient drying and curing strength to avoid the steps. 6 in the serious overflow of the waist 'Yi glue, while the wafer is heated, 201025434 heat curing after the dielectric layer will produce curing shrinkage, and in comparison with the size and thermal expansion coefficient, the dielectric layer and wafer are not The problem of matching. Another 'can be flipped in step 6 to press the back side of the wafer down to a dicing tape, by cutting the adhesiveness of the tape so that the dielectric layer is attached to the dicing tape. In step 7, remove the protective tape to make the wafer active The surface is exposed. Then, in the step ", the wafer is cut into a plurality of crystal grains. In the final step 9, the die is taken out by the cut (four) strip. Therefore, the wafer is heated several times, and the wafer and the wafer are introduced. The thermal expansion coefficient of the electro-adhesive layer is not matched with the size and the curing shrinkage of the dielectric adhesive layer causes the problem of wafer warp, which causes difficulty in subsequent wafer processing. In addition, due to the need The wafer processing steps such as flipping the wafer multiple times have the risk of yield reduction and cost increase. If the flip surface is not flipped and the active surface is exposed, it must be cut from the back side of the wafer to create another crystal that cannot be cut by the cutting line. In order to solve the above problems, the main object of the present invention is to provide a method for manufacturing a die formed with a dielectric adhesive layer, thereby solving the problem that the conventional dielectric adhesive layer contaminates the active surface of the wafer and In order to form a dielectric adhesive layer, the problem of wafer warpage caused by unfavorable factors such as multiple heating of the wafer and thermal expansion coefficient mismatch can reduce the wafer processing steps such as flipping the wafer. In order to meet the high-yield and low-cost process requirements, the purpose of this month is to provide a method for fabricating a die with a dielectric layer, which is used to solve the conventional problem of wafer flipping caused by the active surface of the wafer. Damaged "The cutting of the back side of the wafer 201025434 can not locate the wafer with the cutting line to improve the convenience of the process. The object of the present invention and solving the technical problem thereof are achieved by the following technical solutions. A method for manufacturing a die formed with a dielectric adhesive layer, comprising the steps of: providing a dicing tape, forming a liquid dielectric adhesive layer on the dicing tape, and heating to make the liquid dielectric adhesive layer in a gel-like state. The wafer is integrated into the dielectric layer that has been formed on the dicing tape. The wafer is diced to form a plurality of dies, each of which is formed with a portion of the dielectric layer. And removing the crystal grains, and causing the dielectric glue layer to be formed on the corresponding portions of the crystal grains to be peeled off by the dicing tape. The object of the present invention and solving the technical problems thereof can be further realized by the following technical measures. In the foregoing method of fabricating a wafer, in the step of bonding the wafer, the dicing tape can be adsorbed on a stage to adjust the dielectric layer to be horizontal. In the foregoing method of manufacturing a grain, the platform may be a heating plate to simultaneously heat the dielectric layer while the wafer is being bonded. In the foregoing method of fabricating a grain, in the step of making the liquid dielectric layer in a colloidal state, the liquid dielectric layer can be heated by the stage. In the foregoing method of manufacturing a die, in the step of forming the liquid dielectric layer, the dielectric layer can be formed on the dicing tape by screen printing. In the foregoing method for manufacturing a die, the step of forming the liquid dielectric layer may mainly include: placing a template on the dicing tape; and 201025434 scraping a liquid dielectric glue into the template with a doctor blade' To form the liquid dielectric knee layer. In the foregoing method of fabricating a die, the liquid dielectric layer may have a pattern of no less than a bonding surface area of the wafer. In the foregoing method of manufacturing a die, in the step of providing the dicing tape, the periphery of the dicing tape may be attached to a 固定-type fixing ring. In the foregoing method of manufacturing a die, in the step of forming the liquid dielectric layer, the dielectric layer may be formed on the dicing tape by spin coating. In the foregoing method for manufacturing a die, the step of forming the liquid dielectric layer may include: adsorbing the dicing tape onto a spin-on stage; and applying a liquid dielectric glue to the center of the spin-on stage And rotating the spin-on stage ' to form the liquid dielectric layer. In the foregoing method of manufacturing a die, after the step of forming the liquid dielectric layer, the method further comprises: attaching a 固定-type fixing ring to the periphery of the dicing tape ❹. In the foregoing method of fabricating a die, the spin-on stage may have a ring-shaped recess located outside the wafer and the retaining ring. In the foregoing method of fabricating a die, the dielectric adhesive layer may have a multi-stage heat curing property' and the dielectric adhesive layer remains viscous after the crystal grains are taken out. In the foregoing method of manufacturing a crystal grain, after the step of reducing the viscosity of the dicing tape, it may additionally comprise: heating to cure the dielectric adhesive layer. In the method of manufacturing the granules described above, the dicing tape may be a blue film 201025434 UV tape. In the foregoing fabrication of the die, after the step of cutting the wafer and before the step of removing the die of the die, the method further comprises: reducing the viscosity of the cutting tape. The θ boring tool can be a back surface in the above-mentioned laminated surface of the large-grain manufacturing layer. 'Βθθ circle is used to form the dielectric glue
在前述的晶粒製造方法中，該晶圓用以形成該介電膠 層之貼合表面係可為一主動表面。 由以上技術方案可 看出，本發明之形成有介電膠層 之晶粒製造方法，目士 ，、有以下優點與功效： 可藉由貼合晶圓至已形成在切割膠帶上之介電膠層 之步驟順序作為其中-技術手段，使得切割膠帶可 、用於介電膠層之形成與晶圓切割’藉以解決習知 介電膠層厅染晶圓主動表面與多次加熱晶圓方式與 熱膨脹係數不匹配導致晶圓翹曲的的問題，並可減 少需要翻轉晶圓等晶圓處理步驟，以符合高良率低 成本之製程要求。 一可藉由貼合晶圓之背面至已形成在切割膠帶上之介 電膠層之步驟順序作為其中一技術手段，使得切割 膠帶可共用於介電膠層之形成與晶圓切割並使得晶 圓之主動表面為外露，藉以解決習知由晶圓之主動 表面進行切割需要晶圓翻轉導致受損或是由晶圓之 背面進行切割無法以切割線定位晶圓的問題，以提 升製程之便利性。 201025434 三、 可藉由旋塗載台與〇型固定環之特定組合與形成之 製程順序作為其中一技術手段，使得切割膠帶在旋 塗載台之環形凹槽内的變形凹下部位可收容溢出之 多餘介電膠’以防止旋塗時產生溢膠汙染到〇型固 定環的黏貼區域。 四、 可藉由介電膠層具有多階段熱固化特性並由切割膠 帶轉印到晶圓的技術組合作為其中一技術手段，所 參 形成之介電膠層能取代習知貼附膠膜，可作為黏晶 膠或封膠材料，以降低成本。 【實施方式】 以下將配合所附圖示詳細說明本發明之實施例，然應 注意的是，該些圖示均為簡化之示意圖，僅以示意方法 來說明本發明之基本架構或實施方法，故僅顯示與本案 有關之元件與組合關係，圖中所顯示之元件並非以實際 實施之數目、形狀、尺寸做等比例繪製，某些尺寸比例 Φ 與其他相關尺寸比例或已誇張或是簡化處理，以提供更 清楚的描述。實際實施之數目、形狀及尺寸比例為一種 選置性之設計’詳細之元件佈局可能更為複雜。 依據本發明之第一具體實施例，一種形成有介電膠層 之晶粒製造方法舉例說明於第2圖之流程方塊圖以及第 3Α至3G圖之元件截面示意圖。該晶粒製造方法根據第 2圖，主要包含以下步驟：「提供切割膠帶」之步驟11、 「形成液態介電膠層於切割膠帶上」之步騍12、「加熱 液態介電膠層呈膠稠態」之步驟13、「貼合晶圓至介電 201025434 膠層」之步驟14、「切割晶圓」之步驟15以及 :」。之步_，詳細步驟並請參閱第…圖= 首先，執行步驟U。請參閱第3Α圖所* 割膠帶110。該切割膠帶u〇係可為藍臈 帶 ㈣或其它光感性黏著膠帶，主要作用在於切二(: 固定晶粒以使其不散離’並在後續製程中能以光照曰射方 :::切割膠帶11〇之黏性降低或喪失，切割膠帶Η。 係可被吸附在—平台14〇上，以維持該介電膠層120之 水平度It平台140係可為一加熱板以供在貼合該晶 圓130時（即步驟14)同時加熱該介電膠層120。該切割 膠帶uo之周邊係可預先貼附於一 Ο型固定環17〇，以 支撐該切割膠帶110,使晶圓13〇不會在製程中移動時 受損或變形。通常，該〇型固定環17〇係可為堅固之金In the foregoing method of fabricating a die, the bonding surface of the wafer for forming the dielectric layer may be an active surface. It can be seen from the above technical solution that the method for manufacturing a die with a dielectric adhesive layer of the present invention has the following advantages and effects: by bonding the wafer to the dielectric formed on the dicing tape The sequence of the steps of the glue layer is used as a technical means, so that the dicing tape can be used for the formation of the dielectric glue layer and the wafer is cut, so as to solve the conventional active surface of the dielectric layer and the multiple heating wafers. Mismatch with the coefficient of thermal expansion causes wafer warpage and reduces wafer processing steps such as flipping wafers to meet high-yield, low-cost process requirements. As a technical means, the step of bonding the back surface of the wafer to the dielectric adhesive layer formed on the dicing tape can be used as a technical means, so that the dicing tape can be used for the formation of the dielectric adhesive layer and the wafer cutting and the crystal The active surface of the circle is exposed, so as to solve the problem that the cutting of the active surface of the wafer requires wafer flipping to cause damage or the wafer is cut on the back side of the wafer, and the wafer cannot be positioned by the cutting line, thereby improving the convenience of the process. Sex. 201025434 III. The specific combination of the spin-on stage and the 固定-type retaining ring and the forming process sequence can be used as one of the technical means, so that the dicing tape can be stored in the deformed concave portion of the annular groove of the spin-on stage. The excess dielectric glue' is used to prevent the glue from being contaminated during the spin coating to the adhesion area of the 固定-type retaining ring. 4. The technical combination of the dielectric adhesive layer having multi-stage heat curing characteristics and transferring the dicing tape to the wafer can be used as one of the technical means, and the formed dielectric adhesive layer can replace the conventional adhesive film. Can be used as a glue or sealant to reduce costs. The embodiments of the present invention will be described in detail below with reference to the accompanying drawings in which Therefore, only the components and combinations related to the case are shown. The components shown in the figure are not drawn in proportion to the actual number, shape and size of the actual implementation. Some size ratios Φ are proportional to other related dimensions or are exaggerated or simplified. To provide a clearer description. The actual number, shape and size ratio of the implementation is an optional design. Detailed component layout may be more complicated. According to a first embodiment of the present invention, a method of fabricating a die formed with a dielectric adhesive layer is illustrated in the block diagram of Fig. 2 and a cross-sectional view of the components of Figs. 3 to 3G. According to the second drawing, the method for manufacturing a crystal grain mainly comprises the following steps: "providing a dicing tape" step 11, "forming a liquid dielectric adhesive layer on the dicing tape", step 12, "heating the liquid dielectric layer is glued" Step 13 of the "Thickness" step, "Step 14 of bonding the wafer to the dielectric 201025434," and "Step 15 of "Cleaning the wafer" and:". Step _, detailed steps and please refer to the figure... Figure = First, perform step U. Please refer to Figure 3 for cutting tape 110. The dicing tape u can be a blue enamel tape (four) or other photo-sensitive adhesive tape, the main function is to cut the second (: fix the crystal grain so that it does not scatter) and can emit light in the subsequent process::: The adhesive tape of the dicing tape 11 is reduced or lost, and the dicing tape Η can be adsorbed on the platform 14 , to maintain the level of the dielectric adhesive layer 120. The platform 140 can be a heating plate for affixing When the wafer 130 is assembled (ie, step 14), the dielectric adhesive layer 120 is simultaneously heated. The periphery of the dicing tape uo can be pre-attached to a 固定-type fixing ring 17 〇 to support the dicing tape 110 to make the wafer 13〇 will not be damaged or deformed when moving in the process. Usually, the 固定-type retaining ring 17 can be a solid gold
屬材質，例如不銹鋼、鋁、鐵等等，並具有一尺寸大於 晶圓之開孔。 接著，執行步驟12。請參閱第3C圖所示，形成一液 態介電膠層120於該切割膠帶u〇上。該液態介電膠層 120係可具有多階段熱固化特性。在本實施例中，該介 電膠層120係可利用網印方式形成在該切割膠帶u〇 上。如第3A圖所示，可先放置一模板15〇於該切割膠 帶110上’並如第3B圖所示，利用一刮刀160刮刷一液 態介電膠121至該模板150内，以形成該液態介電膠層 1 20 〇該液態介電膠層120係可具有一印刷圖案，係不小 201025434 於預叹日日圓130之貼合面面積，容許較大的對位誤差， 可輕易地供一晶圓之貼合，有利於後續製程之進行。 執行步驟13 ^請再參閱第3C圖所示，加熱使該液態 介電膠層12G呈膝稠態。在本實施例中，係可藉由該平 台140加熱該液態介電膠層12卜膠稠態的介電膠層I" 係為B階或半固化狀態。故，可省略一次的習知加熱晶 圓步驟。並且，該液態介電膠層120的固化收縮不會對 晶圓造成任何不利的影響。 參 執行步驟14。請參閲第3D與3E圖所示，貼合一晶 圓130至已形成在該切割膠帶11〇上之該介電膠層丨2〇, 藉由同時加熱該介電膠層12〇並加壓使該晶圓13〇黏著 於該介電膠層120。在本實施例中，該晶圓130用以形 成該介電膠層120之貼合表面係可為一背面132，以使 該介電膠層120可作為一黏晶層。即使該介電膠層120 有膠溢出之現象仍不會有汙染到該晶圓13〇之主動表面 φ 133之情事，並能解決習知為了形成介電膠層需要多次 加熱導致晶圓翹曲的問題，並可簡化晶圓翻轉的操作， 以符合高良率低成本之製程要求。在另一不同實施例 中，該晶圓130用以形成該介電膠層12〇之貼合表面係 可為一主動表面，以使該介電膠層12〇可作為一晶圓級 封裝層。 執行步驟15。請參閱第3F圖所示，藉由一刀具180 切割該晶圊130以形成複數個晶粒131，每一晶粒131 係形成有該介電膠層i 2〇之一部分，換言之，該刀具18〇 201025434 之切割深度係超過該晶圓13〇與該介電膠層120但不可 切穿該切割膠帶110。較佳地，在步驟15之後，可藉由 照射UV光的方式以降低該切割膠帶丨〗〇之黏性。 執行步驟16。請參閱第3 〇圖所示，取出該些晶粒 131，並使該介電膠層ι2〇形成於該些晶粒131之對應部 分由該切割膠帶Π〇產生剝離。此外，較佳地，該介電 膠層120可具有多階段熱固化特性，故在取出該些晶粒 _ 13 1之後’該介電膠層120仍具有黏性，以能取代習知 黏晶膝膜’在黏晶時即形成於該些晶粒131上而不需要 逐一點勝、印刷或放置，可作為低製造成本之黏晶材料。 依據本發明之第二具體實施例，另一種形成有介電膠 層之晶粒製造方法舉例說明於第4A至4G圖之元件立體 不意圖與截面示意圖以及5A至5C之元件截面放大示意 圖。該晶粒製造方法所使用之元件主要係與第一具體實 施例大致為相同，故以相同元件符號標示之。請參閱第 # 4A圖所示，首先，提供一切割膠帶11(^該切割膠帶ιι〇 係可為藍膜UV膠帶（blue tapeh該切割膠帶丨丨〇係可被 吸附在一旋塗載台240上，以保持該介電膠層120為水 平狀該旋塗載台240係可為一加熱板，以在貼合該晶 圓13〇時同時加熱該介電膠層120。該旋塗載台24〇係 T具有環形凹槽241(如第5A至5C圖中所示），當該 切割膠帶110被固定時，該切割膠帶11〇在該環形凹槽 241内的部位可為凹下變形。 請參閱第4C與5A圖所示，形成一液態介電膠層121 201025434 於該切割膠帶110上。該液態介電膠層120係可具有多 階段熱固化特性。在本實施例中’該介電膠層1 2 0係可 利用旋塗（spin coating)方式形成在該切割膠帶11〇上。 具體操作如第4B圖所示’點塗一液態介電膠121於該 旋塗載台240之中心並旋轉該旋塗載台240，以形成該 液態介電膠層120(如第4C圖所示當點塗膠量過多 時’該液態介電膠121會向外溢出，藉由該環形凹槽241 之設置，可收容溢出之多餘液態介電膠121，以防止旋 ® 塗時產生溢膠汙染到周邊之區域（如第5A圖所示之 後，加熱使該液態介電膠層121呈膠稠態，如第5B圖 所示之介電膠層120。 在本實施例中，請參閱第4D與5B圖所示，貼附一 〇 型固定環170於該切割膠帶no之周邊，並使該〇型固 定環170不致碰觸沾黏到該介電膠層ι2〇。接著，如第 4D與5C圖所示，加壓貼合一晶圓13〇至該介電膠層12〇 φ 上’使該晶圓丨3〇與該介電膠層120緊密地貼合，並藉 由該環形凹槽241收容壓合該晶圓130時產生溢膠之多 餘膠體（如第5C圖所示）。在貼合該晶圓13〇之過程中， 可加熱該介電膠層120使其產生黏性。如第4E圖所示， 藉由該〇型固定環丨7〇之接觸，可使上述已貼附有該介 電膠層120與該晶圓130之切割膠帶110由平台脫離。 請參閲第4F圖所示，藉由一刀具180切割該晶圓130 以形成複數個晶粒m。該刀具18〇之切割路徑係沿著 該晶圓130之可辨識切割道。每一晶粒131係形成有該 12 201025434 介電膝層12〇之-部分。之後’可照射υν 切割膠帶110之黏性，以利後續取晶步驟之進行 參閱第4G阐所示’取出該些晶*131，並使該介電：： 120形成於該些…31之對應部分由該切割膠帶Jo 產生剝離。 因此’根據本發明之形成有介電膝層之晶 法，該切割膠帶U0可共用於該介電勝冑m之 Ο 該晶圓130切割。其中之一更具體的功效是，當該介電 膠層12〇形成並黏貼該晶圓13〇之時，該晶圓"ο之主 動表面133即朝上外露，藉以解決習知由晶困之主動表 面進行切割需要晶圓翻轉導致受損或是由晶圓之背面進 =切割無法以切割線定位晶圓的問題，以提升製程之便 利性。 發以上所述，僅是本發明的較佳實施例而已，並非對本 :作任何形式上的限制’雖然本發明已以較佳實施例 ❹=如上，然、而並非用以限定本發明，任何熟悉本項技 ’在不脫離本發明之技術範圍内，所作的任何簡單 内改、等效性變化與修飾，均仍屬於本發明的技術範圍 【圖式簡單說明】 第 1 圏為$知的一種形成有介電膠層之晶粒製造方法 之流程方塊圖。 圖.為依據本發明之第一具體實施例的一種形成有 介電膠層之晶粒製造方法之流程方塊圖。 13 201025434 第3A至3G圖：為依據本發明之第一具體實施例在晶粒 製造方法之各步驟中的元件截面示意圓。 第4A至4G圖：為依據本發明之第二具髏實施例在晶粒 製造方法之各步驟中的立體示意圖與截面示意 m 圏。 第5A至5C圖：為依據本發明之第二具體實施例在晶粒 製造方法中由形成介電膠層至貼合晶圓步驟中 元件截面放大示意圖。 【主要元件符號說明】 110 切割膠帶 120 介電膠層 121 液態介電膠 130 晶圓 131 晶粒 132 背面 133主動 140 平台 150 模板 160刮刀 170 〇型固定環 180 刀具 240 旋塗栽台 241 環形凹槽 14It is a material such as stainless steel, aluminum, iron, etc., and has an opening larger than the wafer. Then, step 12 is performed. Referring to Figure 3C, a liquid dielectric layer 120 is formed on the dicing tape u. The liquid dielectric layer 120 can have multi-stage heat curing characteristics. In this embodiment, the dielectric adhesive layer 120 is formed on the dicing tape u by screen printing. As shown in FIG. 3A, a template 15 can be placed on the dicing tape 110 first. As shown in FIG. 3B, a liquid dielectric adhesive 121 is scraped into the template 150 by a doctor blade 160 to form the template. The liquid dielectric adhesive layer 120 can have a printed pattern, which is not small enough to cover the surface area of the Japanese yen 130, allowing for a large alignment error, which can be easily provided. The bonding of a wafer facilitates the subsequent process. Perform step 13 ^ Please refer to Figure 3C again to heat the liquid dielectric layer 12G to a knee-thick state. In this embodiment, the liquid dielectric layer 12 can be heated by the platform 140 to form a dielectric layer I" in a B-stage or semi-cured state. Therefore, the conventional heating crystal step of one time can be omitted. Moreover, the curing shrinkage of the liquid dielectric layer 120 does not cause any adverse effects on the wafer. Refer to Step 14. Referring to FIGS. 3D and 3E, a wafer 130 is bonded to the dielectric adhesive layer 已2〇 formed on the dicing tape 11 〇 by heating the dielectric adhesive layer 12 〇 and adding The wafer 13 is adhered to the dielectric adhesive layer 120. In this embodiment, the bonding surface of the wafer 130 for forming the dielectric adhesive layer 120 can be a back surface 132, so that the dielectric adhesive layer 120 can serve as a bonding layer. Even if the dielectric adhesive layer 120 has a glue overflow phenomenon, there is no contamination to the active surface φ 133 of the wafer 13 , and it can be solved that the wafer is warped in order to form a dielectric adhesive layer. The problem of melody and simplification of wafer flipping operations to meet high-yield, low-cost process requirements. In another different embodiment, the bonding surface of the wafer 130 for forming the dielectric layer 12 can be an active surface, so that the dielectric layer 12 can be used as a wafer level package layer. . Go to Step 15. Referring to FIG. 3F, the wafer 130 is cut by a cutter 180 to form a plurality of crystal grains 131. Each of the crystal grains 131 is formed with a portion of the dielectric adhesive layer i 2 , in other words, the cutter 18 The cutting depth of 〇201025434 exceeds the wafer 13〇 and the dielectric adhesive layer 120 but cannot be cut through the dicing tape 110. Preferably, after step 15, the viscosity of the dicing tape can be lowered by irradiating the UV light. Go to Step 16. Referring to FIG. 3, the die 131 is removed, and the dielectric layer ι2 is formed on the corresponding portion of the die 131 to be peeled off by the dicing tape. In addition, the dielectric adhesive layer 120 may have a multi-stage thermal curing property, so after the removal of the crystal grains _ 13 1 , the dielectric adhesive layer 120 still has a viscosity to replace the conventional adhesive crystal. The knee membrane 'is formed on the crystal grains 131 when it is bonded, and does not need to be smashed, printed or placed one by one, and can be used as a low-management cost. According to a second embodiment of the present invention, another method of fabricating a die formed with a dielectric adhesive layer is exemplified by a cross-sectional view of the components of Figs. 4A to 4G and an enlarged cross-sectional view of the components of 5A to 5C. The elements used in the method of fabricating the grains are mainly the same as in the first embodiment, and are denoted by the same reference numerals. Please refer to the #4A figure. First, provide a cutting tape 11 (^ the cutting tape ιι〇 can be a blue film UV tape (blue tapeh the cutting tape can be adsorbed on a spin coating station 240 The spin coating stage 240 can be a heating plate to maintain the dielectric layer 120 while the wafer 13 is bonded to the dielectric layer 120. The spin coating stage is heated. The tether T has an annular groove 241 (as shown in Figs. 5A to 5C), and when the dicing tape 110 is fixed, the portion of the dicing tape 11 that is inside the annular groove 241 may be concavely deformed. Referring to Figures 4C and 5A, a liquid dielectric layer 121 201025434 is formed on the dicing tape 110. The liquid dielectric layer 120 can have multi-stage heat curing characteristics. In this embodiment The electro-adhesive layer 120 can be formed on the dicing tape 11 by spin coating. The specific operation is as shown in FIG. 4B to 'dot a liquid dielectric gel 121 on the spin-on stage 240. Centering and rotating the spin-on stage 240 to form the liquid dielectric layer 120 (as shown in FIG. 4C when the amount of dots is too much The liquid dielectric adhesive 121 will overflow outwardly, and the annular groove 241 can be arranged to receive the overflowing excess liquid dielectric adhesive 121 to prevent the overflow of the molten metal to the surrounding area (such as After the fifth embodiment, the liquid dielectric layer 121 is heated to a colloidal state, such as the dielectric adhesive layer 120 shown in FIG. 5B. In this embodiment, as shown in FIGS. 4D and 5B, Attaching a 固定-type fixing ring 170 to the periphery of the dicing tape no, and causing the 固定-type fixing ring 170 to be adhered to the dielectric adhesive layer ι2 〇. Then, as shown in Figures 4D and 5C, Pressing and bonding a wafer 13 to the dielectric layer 12 〇 φ to make the wafer 丨 3 紧密 closely adhere to the dielectric layer 120, and accommodating the ring by the annular groove 241 When the wafer 130 is pasted, the excess colloid of the glue is generated (as shown in Fig. 5C). During the bonding of the wafer 13 , the dielectric layer 120 can be heated to make it sticky. As shown in Fig. 4E It is shown that the dicing tape 110 to which the dielectric adhesive layer 120 and the wafer 130 are attached can be detached from the platform by the contact of the 固定-type fixing ring 丨7〇. As shown in Fig. 4F, the wafer 130 is diced by a cutter 180 to form a plurality of dies m. The cutting path of the dies 18 is along the identifiable scribe lines of the wafer 130. The portion of the 12 201025434 dielectric knee layer is formed. After that, the viscosity of the υν dicing tape 110 can be irradiated to facilitate the subsequent crystallization step, as shown in FIG. 4G, and the crystals are removed. And the corresponding portion of the dielectric:: 120 formed in the ... 31 is peeled off by the dicing tape Jo. Therefore, according to the crystal forming method of the dielectric knee layer of the present invention, the dicing tape U0 can be commonly used for the dielectric smashing of the wafer 130. One of the more specific effects is that when the dielectric adhesive layer 12 is formed and adhered to the wafer 13 , the active surface 133 of the wafer is exposed upwards, thereby solving the conventional problem. The cutting of the active surface requires wafer flipping to cause damage or the problem of being able to position the wafer by the cutting line by the back side of the wafer to improve the convenience of the process. The above is only a preferred embodiment of the present invention, and is not intended to be limiting in any way. Although the present invention has been described in the preferred embodiments, the present invention is not limited thereto. It is to be understood that any simple internal modifications, equivalent changes, and modifications made by the present technology without departing from the technical scope of the present invention are still within the technical scope of the present invention. A block diagram of a process for fabricating a die formed with a dielectric layer. Figure is a flow block diagram of a method of fabricating a die formed with a dielectric paste layer in accordance with a first embodiment of the present invention. 13 201025434 Figures 3A to 3G are schematic cross-sectional views of elements in respective steps of the method of fabricating a die in accordance with a first embodiment of the present invention. 4A to 4G are perspective views and cross-sectional views of a second embodiment of the present invention in each step of the method of manufacturing a die. 5A to 5C are enlarged cross-sectional views showing the components in the step of forming a dielectric adhesive layer to a bonded wafer in the method of manufacturing a die according to the second embodiment of the present invention. [Main component symbol description] 110 Cutting tape 120 Dielectric adhesive layer 121 Liquid dielectric adhesive 130 Wafer 131 Grain 132 Back 133 Active 140 Platform 150 Template 160 scraper 170 固定 type fixing ring 180 Tool 240 Rotary coating table 241 Annular concave Slot 14