TW200608402A - Semiconductor integrated device, and IC card and portable information terminal using the semiconductor integrated device - Google Patents

Semiconductor integrated device, and IC card and portable information terminal using the semiconductor integrated device

Info

Publication number
TW200608402A
TW200608402A TW094108824A TW94108824A TW200608402A TW 200608402 A TW200608402 A TW 200608402A TW 094108824 A TW094108824 A TW 094108824A TW 94108824 A TW94108824 A TW 94108824A TW 200608402 A TW200608402 A TW 200608402A
Authority
TW
Taiwan
Prior art keywords
semiconductor integrated
erased
integrated device
written
flag
Prior art date
Application number
TW094108824A
Other languages
Chinese (zh)
Inventor
Takanori Yamazoe
Tadashi Oonishi
Yoshiki Kawajiri
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200608402A publication Critical patent/TW200608402A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure

Landscapes

  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Storage Device Security (AREA)
  • Credit Cards Or The Like (AREA)

Abstract

A highly reliable semiconductor integrated device which can detect insufficient erasing and writing generated while a nonvolatile memory is being updated, and an IC card and a portable information terminal using such semiconductor integrated device are provided. A nonvolatile memory (904) having a memory cell group (1001) divided into a plurality of blocks is provided, a flag (1011) is added to a data row (1010) of the block, and the flag is erased or written or erased and written each time the data row is erased or written or erased and written. Two types of set constant currents are applied to the memory cell of the flag, and at that time, a flag judging part (1007) judges whether the erasing or writing or the erasing and writing are normal or abnormal by using the voltage applied by the memory cell. Data wherein an abnormality is detected is re-erased or rewritten or re-erased and re-written to provide normal data.
TW094108824A 2004-08-20 2005-03-22 Semiconductor integrated device, and IC card and portable information terminal using the semiconductor integrated device TW200608402A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004240553 2004-08-20

Publications (1)

Publication Number Publication Date
TW200608402A true TW200608402A (en) 2006-03-01

Family

ID=35907319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108824A TW200608402A (en) 2004-08-20 2005-03-22 Semiconductor integrated device, and IC card and portable information terminal using the semiconductor integrated device

Country Status (3)

Country Link
JP (1) JPWO2006018925A1 (en)
TW (1) TW200608402A (en)
WO (1) WO2006018925A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866107B2 (en) * 2006-03-08 2012-02-01 パナソニック株式会社 Nonvolatile memory device and write determination method thereof
JP2007265496A (en) * 2006-03-28 2007-10-11 Toshiba Corp Ic card, and data managing method of nonvolatile memory
JP2011123964A (en) * 2009-12-11 2011-06-23 Toshiba Corp Semiconductor memory
JP5862350B2 (en) * 2012-02-16 2016-02-16 株式会社デンソー Flash memory writing device, flash memory writing control method, and program
CN105161131B (en) * 2015-09-29 2019-08-13 北京兆易创新科技股份有限公司 A kind of method of nonvolatile memory write state register
CN108365283A (en) 2018-05-04 2018-08-03 深圳市道通智能航空技术有限公司 Device battery and unmanned plane

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001250388A (en) * 2000-03-06 2001-09-14 Fujitsu Ltd Non-volatile memory storing erasion operation information
JP2002367380A (en) * 2001-06-05 2002-12-20 Sony Corp Non-volatile semiconductor memory
JP4022073B2 (en) * 2002-01-31 2007-12-12 大日本印刷株式会社 Non-contact / contact IC card communication control device and mobile phone device
JP4129381B2 (en) * 2002-09-25 2008-08-06 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
WO2006018925A1 (en) 2006-02-23
JPWO2006018925A1 (en) 2008-05-01

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