TW200606591A - Condensed polymer-containing anti-reflective coating for semiconductor - Google Patents

Condensed polymer-containing anti-reflective coating for semiconductor

Info

Publication number
TW200606591A
TW200606591A TW094111341A TW94111341A TW200606591A TW 200606591 A TW200606591 A TW 200606591A TW 094111341 A TW094111341 A TW 094111341A TW 94111341 A TW94111341 A TW 94111341A TW 200606591 A TW200606591 A TW 200606591A
Authority
TW
Taiwan
Prior art keywords
semiconductor
antireflection film
reflective coating
containing anti
condensed polymer
Prior art date
Application number
TW094111341A
Other languages
English (en)
Other versions
TWI396051B (zh
Inventor
Takahiro Kishioka
Rikimaru Sakamoto
Yoshiomi Hiroi
Daisuke Maruyama
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200606591A publication Critical patent/TW200606591A/zh
Application granted granted Critical
Publication of TWI396051B publication Critical patent/TWI396051B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0605—Polycondensates containing five-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0616—Polycondensates containing five-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with only two nitrogen atoms in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
TW094111341A 2004-04-09 2005-04-08 具有縮合系聚合物之半導體用防反射膜 TWI396051B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004115385 2004-04-09

Publications (2)

Publication Number Publication Date
TW200606591A true TW200606591A (en) 2006-02-16
TWI396051B TWI396051B (zh) 2013-05-11

Family

ID=35125236

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111341A TWI396051B (zh) 2004-04-09 2005-04-08 具有縮合系聚合物之半導體用防反射膜

Country Status (7)

Country Link
US (1) US7790356B2 (zh)
EP (1) EP1757986B1 (zh)
JP (1) JP4702559B2 (zh)
KR (1) KR100853004B1 (zh)
CN (1) CN1965268B (zh)
TW (1) TWI396051B (zh)
WO (1) WO2005098542A1 (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
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TWI411622B (zh) * 2004-10-12 2013-10-11 Nissan Chemical Ind Ltd 包含有含氮芳香環構造之微影用形成防反射膜之組成物
TWI422978B (zh) * 2007-12-13 2014-01-11 Nissan Chemical Ind Ltd 光阻下層膜形成組成物及光阻圖型之形成方法
TWI464182B (zh) * 2008-11-28 2014-12-11 Nissan Chemical Ind Ltd 薄膜電晶體用閘極絕緣膜形成組成物
TWI464149B (zh) * 2008-11-28 2014-12-11 Nissan Chemical Ind Ltd 薄膜電晶體用閘極絕緣膜形成劑
TWI570515B (zh) * 2011-08-04 2017-02-11 日產化學工業股份有限公司 具有縮合系聚合物之ｅｕｖ微影用光阻下層膜形成組成物
TWI711884B (zh) * 2015-12-25 2020-12-01 日商日產化學工業股份有限公司 阻劑底層膜形成用組成物及阻劑圖型之形成方法
TWI800134B (zh) * 2020-12-07 2023-04-21 日商信越化學工業股份有限公司 含矽之阻劑下層膜形成用組成物以及圖案形成方法

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CN101052919B (zh) * 2004-11-01 2011-05-25 日产化学工业株式会社 含磺酸酯的形成光刻用防反射膜的组合物
SG161244A1 (en) 2005-04-19 2010-05-27 Nissan Chemical Ind Ltd Resist underlayer coating forming composition for forming photo- crosslinking cured resist underlayer coating
CN101160549B (zh) 2005-04-19 2012-10-10 日产化学工业株式会社 含有具有乙烯二羰基结构的聚合物的形成光刻用防反射膜的组合物
KR101226050B1 (ko) 2005-09-27 2013-01-24 닛산 가가쿠 고교 가부시키 가이샤 이소시아눌산 화합물과 안식향산 화합물의 반응 생성물을 포함하는 반사방지막 형성 조성물
EP2042927B1 (en) * 2006-06-19 2012-03-07 Nissan Chemical Industries, Ltd. Composition containing hydroxylated condensation resin for forming film under resist
KR101423058B1 (ko) 2006-10-12 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 4층계 적층체에 의한 반도체장치의 제조방법
KR101451761B1 (ko) 2007-05-30 2014-10-16 닛산 가가쿠 고교 가부시키 가이샤 박막 트랜지스터용 게이트 절연막 형성제
JP5337983B2 (ja) * 2007-09-19 2013-11-06 日産化学工業株式会社 多環式脂肪族環を有するポリマーを含むリソグラフィー用レジスト下層膜形成組成物
JP5218785B2 (ja) * 2008-01-30 2013-06-26 日産化学工業株式会社 硫黄原子を含有するレジスト下層膜形成用組成物及びレジストパターンの形成方法
KR101423060B1 (ko) * 2008-02-21 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물 및 그것을 이용한 레지스트 패턴의 형성방법
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CN102458850A (zh) * 2009-06-12 2012-05-16 三菱树脂株式会社 叠层聚酯膜
JP5522415B2 (ja) * 2009-07-07 2014-06-18 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
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CN104698749B (zh) 2010-01-25 2019-11-19 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
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EP2472328B1 (en) * 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
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WO2012124597A1 (ja) 2011-03-15 2012-09-20 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
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JP6059808B2 (ja) * 2013-07-09 2017-01-11 富士フイルム株式会社 光学フィルム、それを用いた偏光板および液晶表示装置
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US9448480B2 (en) 2013-09-27 2016-09-20 Nissan Chemical Industries, Ltd. Resist underlayer film formation composition and method for forming resist pattern using the same
JP6238415B2 (ja) * 2013-12-27 2017-11-29 富士フイルム株式会社 光学フィルム、それを用いた偏光板および液晶表示装置
KR102255221B1 (ko) * 2013-12-27 2021-05-24 롬엔드하스전자재료코리아유한회사 나노리소그래피용 유기 바닥 반사방지 코팅 조성물
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JP6274673B2 (ja) * 2014-12-26 2018-02-07 富士フイルム株式会社 偏光板用組成物、偏光板保護フィルム、セルロースアシレートフィルム、偏光子、偏光板および表示装置
JP6892633B2 (ja) * 2015-07-02 2021-06-23 日産化学株式会社 長鎖アルキル基を有するエポキシ付加体を含むレジスト下層膜形成組成物
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Cited By (7)

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Publication number Priority date Publication date Assignee Title
TWI411622B (zh) * 2004-10-12 2013-10-11 Nissan Chemical Ind Ltd 包含有含氮芳香環構造之微影用形成防反射膜之組成物
TWI422978B (zh) * 2007-12-13 2014-01-11 Nissan Chemical Ind Ltd 光阻下層膜形成組成物及光阻圖型之形成方法
TWI464182B (zh) * 2008-11-28 2014-12-11 Nissan Chemical Ind Ltd 薄膜電晶體用閘極絕緣膜形成組成物
TWI464149B (zh) * 2008-11-28 2014-12-11 Nissan Chemical Ind Ltd 薄膜電晶體用閘極絕緣膜形成劑
TWI570515B (zh) * 2011-08-04 2017-02-11 日產化學工業股份有限公司 具有縮合系聚合物之ｅｕｖ微影用光阻下層膜形成組成物
TWI711884B (zh) * 2015-12-25 2020-12-01 日商日產化學工業股份有限公司 阻劑底層膜形成用組成物及阻劑圖型之形成方法
TWI800134B (zh) * 2020-12-07 2023-04-21 日商信越化學工業股份有限公司 含矽之阻劑下層膜形成用組成物以及圖案形成方法

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US7790356B2 (en) 2010-09-07
CN1965268A (zh) 2007-05-16
TWI396051B (zh) 2013-05-11
EP1757986B1 (en) 2014-05-14
KR100853004B1 (ko) 2008-08-19
EP1757986A4 (en) 2009-04-08
US20080038678A1 (en) 2008-02-14
JP4702559B2 (ja) 2011-06-15
KR20070007911A (ko) 2007-01-16
EP1757986A1 (en) 2007-02-28
WO2005098542A1 (ja) 2005-10-20
JPWO2005098542A1 (ja) 2008-02-28

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