TW200506514A - Method for manufacturing gray tone mask, and gray tone mask - Google Patents

Method for manufacturing gray tone mask, and gray tone mask

Info

Publication number
TW200506514A
TW200506514A TW093118772A TW93118772A TW200506514A TW 200506514 A TW200506514 A TW 200506514A TW 093118772 A TW093118772 A TW 093118772A TW 93118772 A TW93118772 A TW 93118772A TW 200506514 A TW200506514 A TW 200506514A
Authority
TW
Taiwan
Prior art keywords
gray tone
tone mask
light
translucent
mask
Prior art date
Application number
TW093118772A
Other languages
Chinese (zh)
Other versions
TWI286663B (en
Inventor
Kazuhisa Imura
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200506514A publication Critical patent/TW200506514A/en
Application granted granted Critical
Publication of TWI286663B publication Critical patent/TWI286663B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An object of the present invention is to provide a method for manufacturing a gray tone mask in halftone film type being capable of manufacturing TFT in high quality. The present invention relates to a method for manufacturing gray tone mask having a light-shielding part, a transparent part, and a translucent part, comprising the steps of preparing a mask blank having a translucent film (22) and a light-shielding film (23) sequentially formed on a transparent substrate (21), forming a resist pattern (24a) of an area corresponding to the light-shielding part onto the mask blank and forming a light-shielding part onto the translucent film (22) by etching light-shielding film (23) with said resist pattern (24a) as a mask, and forming resist pattern (24b) onto an area at least comprising the translucent part, and subsequently forming the translucent part and transparent part by etching translucent film (22) with the said resist pattern (24b) as a mask.
TW093118772A 2003-06-30 2004-06-28 Method for manufacturing gray tone mask, and gray tone mask TWI286663B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003187960 2003-06-30

Publications (2)

Publication Number Publication Date
TW200506514A true TW200506514A (en) 2005-02-16
TWI286663B TWI286663B (en) 2007-09-11

Family

ID=34587128

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118772A TWI286663B (en) 2003-06-30 2004-06-28 Method for manufacturing gray tone mask, and gray tone mask

Country Status (4)

Country Link
JP (2) JP4729606B2 (en)
KR (3) KR101172645B1 (en)
CN (1) CN100337306C (en)
TW (1) TWI286663B (en)

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* Cited by examiner, † Cited by third party
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JP4587837B2 (en) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 Gray tone mask manufacturing method and gray tone mask
TW200639576A (en) * 2005-02-28 2006-11-16 Hoya Corp Method of manufacturing gray level mask, gray level mask, and gray level mask blank
KR100800301B1 (en) * 2005-07-05 2008-02-01 주식회사 에스앤에스텍 Manufacturing method of blankmask and photomask for gray-tone
KR100850511B1 (en) * 2005-12-22 2008-08-05 주식회사 에스앤에스텍 Process Method of Half Tone Blankmask
KR100812253B1 (en) * 2006-01-20 2008-03-10 주식회사 에스앤에스텍 Process Method of Gray Tone Photo Mask, Gray Tone Photo Mask and Gray Tone Blank Mask
CN1808267B (en) * 2006-02-13 2010-12-01 友达光电股份有限公司 Mask, manufacturing method and application thereof
KR100822296B1 (en) * 2006-04-10 2008-04-15 엘지마이크론 주식회사 Half tone mask having multi?step structure and method for manufacturing thereof
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP2009128558A (en) * 2007-11-22 2009-06-11 Hoya Corp Photomask and method for manufacturing photomask, and pattern transfer method
CN101738846B (en) * 2008-11-17 2012-02-29 北京京东方光电科技有限公司 Mask plate and manufacture method thereof
KR101186890B1 (en) * 2009-05-21 2012-10-02 엘지이노텍 주식회사 Half tone mask and method of manufacturig the same
CN101943854B (en) * 2009-07-03 2012-07-04 深圳清溢光电股份有限公司 Design method of half-exposure region of half-gray-scale mask plate and manufacture method thereof
CN108267927B (en) * 2011-12-21 2021-08-24 大日本印刷株式会社 Large-scale phase shift mask
JP6063650B2 (en) * 2012-06-18 2017-01-18 Hoya株式会社 Photomask manufacturing method
JP5635577B2 (en) * 2012-09-26 2014-12-03 Hoya株式会社 Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
JP6157832B2 (en) * 2012-10-12 2017-07-05 Hoya株式会社 Electronic device manufacturing method, display device manufacturing method, photomask manufacturing method, and photomask
EP2972589B1 (en) * 2013-03-12 2017-05-03 Micronic Mydata AB Mechanically produced alignment fiducial method and alignment system
CN104849525B (en) * 2014-02-13 2017-12-01 上海和辉光电有限公司 Use the method for testing of test suite
KR102378211B1 (en) * 2015-06-23 2022-03-25 삼성디스플레이 주식회사 Mask and fabrication method of display device by using the mask
CN105529274B (en) * 2016-02-02 2018-10-26 京东方科技集团股份有限公司 Production method, array substrate and the display device of thin film transistor (TFT)
CN105717737B (en) * 2016-04-26 2019-08-02 深圳市华星光电技术有限公司 A kind of preparation method of mask plate and colored filter substrate
CN106887439A (en) * 2017-03-21 2017-06-23 上海中航光电子有限公司 Array base palte and preparation method thereof, display panel

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Also Published As

Publication number Publication date
KR101172645B1 (en) 2012-08-08
KR20110122654A (en) 2011-11-10
CN100337306C (en) 2007-09-12
JP2008282046A (en) 2008-11-20
KR20070038493A (en) 2007-04-10
KR101215742B1 (en) 2012-12-26
TWI286663B (en) 2007-09-11
KR20050002662A (en) 2005-01-10
CN1577085A (en) 2005-02-09
JP4806701B2 (en) 2011-11-02
JP4729606B2 (en) 2011-07-20
KR101182038B1 (en) 2012-09-11
JP2008310367A (en) 2008-12-25

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