TW200608581A - Gray tone mask and method for manufacturing the same - Google Patents

Gray tone mask and method for manufacturing the same

Info

Publication number
TW200608581A
TW200608581A TW094123355A TW94123355A TW200608581A TW 200608581 A TW200608581 A TW 200608581A TW 094123355 A TW094123355 A TW 094123355A TW 94123355 A TW94123355 A TW 94123355A TW 200608581 A TW200608581 A TW 200608581A
Authority
TW
Taiwan
Prior art keywords
light shielding
tone mask
gray tone
semitransmitting
pattern
Prior art date
Application number
TW094123355A
Other languages
Chinese (zh)
Other versions
TWI291763B (en
Inventor
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200608581A publication Critical patent/TW200608581A/en
Application granted granted Critical
Publication of TWI291763B publication Critical patent/TWI291763B/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

The objective of the present invention is to provide a gray tone mask having preferable transmittance distribution in a semitransmitting part, a preferable pattern cross sectional form of a light shielding part adjacent to a light transmitting part, and preferable pattern accuracy of a light transmitting part as a gray tone mask having a pattern including a light transmitting part, a light shielding part and a semitransmitting part successively arranged in this order in one direction, and to provide a method for manufacturing the gray tone mask. The gray tone mask 10 has a pattern comprising a light shielding part, a light transmitting part and a semitransmitting part. The pattern includes a pattern having a light transmitting part, a light shielding part and a semitransmitting part successively arranged in this order in one direction. The light shielding part comprises layers of the light shielding film 13a forming the light shielding part and the semitransmitting film 12a formed in a region excluding a desired margin region in the side of the light shielding part in the border portion of the light transmitting part on the light shielding film 13a.
TW094123355A 2004-07-12 2005-07-11 Gray tone mask and method for manufacturing the same TWI291763B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004205309A JP2006030320A (en) 2004-07-12 2004-07-12 Gray tone mask and method for manufacturing gray tone mask

Publications (2)

Publication Number Publication Date
TW200608581A true TW200608581A (en) 2006-03-01
TWI291763B TWI291763B (en) 2007-12-21

Family

ID=35896789

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123355A TWI291763B (en) 2004-07-12 2005-07-11 Gray tone mask and method for manufacturing the same

Country Status (4)

Country Link
JP (1) JP2006030320A (en)
KR (1) KR100663115B1 (en)
CN (1) CN100432809C (en)
TW (1) TWI291763B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI682190B (en) * 2014-03-19 2020-01-11 日商豪雅冠得光電股份有限公司 Optical element

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4968709B2 (en) * 2006-03-17 2012-07-04 Ｈｏｙａ株式会社 Manufacturing method of gray tone mask
JP4816197B2 (en) * 2006-03-30 2011-11-16 大日本印刷株式会社 Gradation mask and manufacturing method thereof
JP4934237B2 (en) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 Gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method
JP5089362B2 (en) * 2007-12-13 2012-12-05 信越化学工業株式会社 Photomask and exposure method
WO2009130746A1 (en) * 2008-04-22 2009-10-29 シャープ株式会社 Method for manufacturing thin film transistor substrate
JP5182029B2 (en) * 2008-11-18 2013-04-10 大日本印刷株式会社 Gradation mask
JP2011210889A (en) * 2010-03-29 2011-10-20 Hoya Corp Resist coating method and resist coating device, and photomask blank and method of manufacturing photomask using the resist coating method
JP5635577B2 (en) * 2012-09-26 2014-12-03 Hoya株式会社 Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
JP2015212720A (en) * 2014-05-01 2015-11-26 Hoya株式会社 Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device
CN104122700A (en) * 2014-05-29 2014-10-29 京东方科技集团股份有限公司 Substrate for 3D display, manufacturing method thereof and mask plate
JP2016224289A (en) * 2015-06-01 2016-12-28 Hoya株式会社 Method for manufacturing photomask, photomask and method for manufacturing display device
JP6726553B2 (en) * 2015-09-26 2020-07-22 Hoya株式会社 Photomask manufacturing method and display device manufacturing method
JP6573591B2 (en) * 2016-09-13 2019-09-11 Hoya株式会社 Photomask manufacturing method, photomask, and display device manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3429125B2 (en) * 1995-12-21 2003-07-22 沖電気工業株式会社 Phase shift mask and method of forming resist pattern using the mask
JPH11289010A (en) * 1998-04-01 1999-10-19 Sony Corp Formation method for multilayer interconnection
JP2002131885A (en) * 2000-10-23 2002-05-09 Hoya Corp Drawing method of gray tone mask and manufacturing method
JP2002189281A (en) * 2000-12-19 2002-07-05 Hoya Corp Gray tone mask and method for producing the same
JP4410951B2 (en) 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 Pattern forming method and manufacturing method of liquid crystal display device
KR100464204B1 (en) * 2001-06-08 2005-01-03 엘지.필립스 엘시디 주식회사 Gray tone mask and manufacturing method for liquid crystal display using it
US7035448B2 (en) * 2001-08-20 2006-04-25 Hoya Corporation Method of defect inspection of graytone mask and apparatus doing the same
JP2006030319A (en) 2004-07-12 2006-02-02 Hoya Corp Gray tone mask and method for manufacturing gray tone mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI682190B (en) * 2014-03-19 2020-01-11 日商豪雅冠得光電股份有限公司 Optical element

Also Published As

Publication number Publication date
KR100663115B1 (en) 2007-01-02
CN100432809C (en) 2008-11-12
TWI291763B (en) 2007-12-21
KR20060049995A (en) 2006-05-19
CN1721960A (en) 2006-01-18
JP2006030320A (en) 2006-02-02

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