SG11202011800YA - A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof - Google Patents

A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof

Info

Publication number
SG11202011800YA
SG11202011800YA SG11202011800YA SG11202011800YA SG11202011800YA SG 11202011800Y A SG11202011800Y A SG 11202011800YA SG 11202011800Y A SG11202011800Y A SG 11202011800YA SG 11202011800Y A SG11202011800Y A SG 11202011800YA SG 11202011800Y A SG11202011800Y A SG 11202011800YA
Authority
SG
Singapore
Prior art keywords
manufacturing
etched
photoresist
photoresist coating
containing layer
Prior art date
Application number
SG11202011800YA
Inventor
Shunji Kawato
Hiroshi Yanagita
Yusuke Hama
Takayuki SAO
Taku Hirayama
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11202011800YA publication Critical patent/SG11202011800YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
SG11202011800YA 2018-06-22 2019-06-17 A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof SG11202011800YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18179342 2018-06-22
PCT/EP2019/065844 WO2019243238A1 (en) 2018-06-22 2019-06-17 A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof

Publications (1)

Publication Number Publication Date
SG11202011800YA true SG11202011800YA (en) 2021-01-28

Family

ID=62750864

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202011800YA SG11202011800YA (en) 2018-06-22 2019-06-17 A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof

Country Status (8)

Country Link
US (1) US20210263414A1 (en)
EP (1) EP3811152B1 (en)
JP (1) JP7233444B2 (en)
KR (1) KR102475952B1 (en)
CN (1) CN112292637A (en)
SG (1) SG11202011800YA (en)
TW (1) TW202006468A (en)
WO (1) WO2019243238A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021033158A (en) * 2019-08-28 2021-03-01 東京応化工業株式会社 Resist composition and resist pattern forming method
JP7353193B2 (en) * 2020-01-22 2023-09-29 東京応化工業株式会社 Resist pattern formation method

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US4355094A (en) * 1981-03-16 1982-10-19 Rca Corporation Positive radiation sensitive resist terpolymers
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP3918647B2 (en) * 2002-06-13 2007-05-23 日立化成工業株式会社 Photosensitive resin composition, photosensitive element using the same, resist pattern forming method, and printed wiring board manufacturing method
JP3943058B2 (en) * 2003-07-16 2007-07-11 東京応化工業株式会社 Positive photoresist composition and method for forming resist pattern
JP4673222B2 (en) * 2003-10-14 2011-04-20 株式会社Ａｄｅｋａ Dry film resist
JP4670479B2 (en) 2005-05-26 2011-04-13 Ｊｓｒ株式会社 Method for producing positive-type radiation-sensitive resin composition, transfer film, and plated model
KR20070017692A (en) * 2005-08-08 2007-02-13 삼성전자주식회사 Low Molecular Weight Conjugated Nitrogen Compounds and Device using the Same
JP5183069B2 (en) * 2006-01-08 2013-04-17 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Coating composition for photoresist
WO2009093706A1 (en) * 2008-01-24 2009-07-30 Asahi Kasei E-Materials Corporation Photosensitive resin laminate
KR101520623B1 (en) * 2008-10-01 2015-05-18 삼성전자주식회사 Inkjet printhead and method of manufacturing the same
EP2204392A1 (en) * 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) * 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
JP5592631B2 (en) * 2009-10-02 2014-09-17 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
US9454082B2 (en) * 2013-01-29 2016-09-27 3M Innovative Properties Company Surfactants and methods of making and using same
WO2016056451A1 (en) * 2014-10-06 2016-04-14 東レ株式会社 Resin composition, method for producing heat-resistant resin film, and display device
US20160306278A1 (en) * 2015-04-20 2016-10-20 Tokyo Ohka Kogyo Co., Ltd. Chemical for photolithography with improved liquid transfer property and resist composition comprising the same
US10088749B2 (en) * 2016-09-30 2018-10-02 Rohm And Haas Electronic Materials Llc Photoacid-generating compound and associated polymer, photoresist composition, and method of forming a photoresist relief image
SG11201900622UA (en) * 2016-10-12 2019-04-29 Ridgefield Acquisition Chemically amplified positive photoresist composition and pattern forming method using same

Also Published As

Publication number Publication date
TW202006468A (en) 2020-02-01
JP2021528677A (en) 2021-10-21
EP3811152A1 (en) 2021-04-28
JP7233444B2 (en) 2023-03-06
US20210263414A1 (en) 2021-08-26
CN112292637A (en) 2021-01-29
KR20210022735A (en) 2021-03-03
WO2019243238A1 (en) 2019-12-26
EP3811152B1 (en) 2022-03-23
KR102475952B1 (en) 2022-12-09

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