SG11201810824UA - Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber - Google Patents

Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber

Info

Publication number
SG11201810824UA
SG11201810824UA SG11201810824UA SG11201810824UA SG11201810824UA SG 11201810824U A SG11201810824U A SG 11201810824UA SG 11201810824U A SG11201810824U A SG 11201810824UA SG 11201810824U A SG11201810824U A SG 11201810824UA SG 11201810824U A SG11201810824U A SG 11201810824UA
Authority
SG
Singapore
Prior art keywords
processing chamber
international
inlet ports
gas inlet
chamber
Prior art date
Application number
SG11201810824UA
Inventor
Vishwas Kumar Pandey
Kartik Shah
Edric Tong
Prashanth Vasudeva
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201810824UA publication Critical patent/SG11201810824UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Filtering Of Dispersed Particles In Gases (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 December 2017 (07.12.2017) WIP0 I PCT o n DID lII D ono 1101 oimIE (10) International Publication Number WO 2017/209802 Al (51) International Patent Classification: H01L 21/02 (2006.01) HOlL 21/67 (2006.01) (21) International Application Number: PCT/US2017/014864 (22) International Filing Date: 25 January 2017 (25.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/345,631 03 June 2016 (03.06.2016) US 62/379,987 26 August 2016 (26.08.2016) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (72) Inventors: PANDEY, Vishwas Kumar; 4-25/2 Shiv Kru- pa, Ved nagar, Ujjain, Madhya Pradesh 456010 (IN). SHAH, Kartik; 18908 Bellgrove Circle, Saratoga, Cal- ifornia 95070 (US). TONG, Edric; 955 Larkspur Av- enue, Sunnyvale, California 94086-8635 (US). VASUDE- VA, Prashanth; Flat C-504, Melody Apts., Nayandanahal- li, Mysore Road, Bangalore 560039 (IN). (74) Agent: PATTERSON, B. Todd et al.; Patterson & Sheri- dan, L.L.P., 24 Greenway Plaza, Suite 1600, Houston, Texas 77046 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, (54) Title: EFFECTIVE AND NOVEL DESIGN FOR LOWER PARTICLE COUNT AND BETTER WAFER QUALITY BY DIF- FUSING THE FLOW INSIDE THE CHAMBER 100--„ 1 / 4. 102 107 111 1-1 N O GC t:T O N _ N O 1-1 N C 303 124 116 132 130 122 Fig. 3 (57) : Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber. [Continued on next page] WO 2017/209802 Al MIDEDIMOMMIDIRMEMO 010 1101M01101011MEMOIMIE MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201810824UA 2016-06-03 2017-01-25 Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber SG11201810824UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662345631P 2016-06-03 2016-06-03
US201662379987P 2016-08-26 2016-08-26
PCT/US2017/014864 WO2017209802A1 (en) 2016-06-03 2017-01-25 Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber

Publications (1)

Publication Number Publication Date
SG11201810824UA true SG11201810824UA (en) 2019-01-30

Family

ID=60478862

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810824UA SG11201810824UA (en) 2016-06-03 2017-01-25 Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber

Country Status (7)

Country Link
US (2) US10619235B2 (en)
JP (2) JP6756853B2 (en)
KR (2) KR102303066B1 (en)
CN (2) CN116978818A (en)
SG (1) SG11201810824UA (en)
TW (2) TWI718292B (en)
WO (1) WO2017209802A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017209802A1 (en) * 2016-06-03 2017-12-07 Applied Materials, Inc. Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529432A (en) * 1991-07-19 1993-02-05 Dainippon Screen Mfg Co Ltd Storing and transferring method for substrate after cleaning treatment
JP2763222B2 (en) * 1991-12-13 1998-06-11 三菱電機株式会社 Chemical vapor deposition method, chemical vapor deposition processing system and chemical vapor deposition apparatus therefor
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
JPH0697080A (en) * 1992-09-10 1994-04-08 Mitsubishi Electric Corp Reaction chamber for chemical, vapor growth apparatus and chemical vapor growth apparatus using the same
DE69416460D1 (en) * 1993-07-01 1999-03-25 Gen Electric Adhering application of a thin membrane onto an irregularly shaped surface
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JPH08186081A (en) * 1994-12-29 1996-07-16 F T L:Kk Manufacture of semiconductor device and manufacturing equipment for semiconductor device
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JP2748886B2 (en) * 1995-03-31 1998-05-13 日本電気株式会社 Plasma processing equipment
US6152070A (en) * 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
JPH1154496A (en) * 1997-08-07 1999-02-26 Tokyo Electron Ltd Heat treatment system and gas processing system
JP3035735B2 (en) * 1998-09-07 2000-04-24 国際電気株式会社 Substrate processing apparatus and substrate processing method
JP2001035797A (en) * 1999-07-16 2001-02-09 Hitachi Kokusai Electric Inc Substrate treatment device
JP3709552B2 (en) * 1999-09-03 2005-10-26 株式会社日立製作所 Plasma processing apparatus and plasma processing method
JP4054159B2 (en) * 2000-03-08 2008-02-27 東京エレクトロン株式会社 Substrate processing method and apparatus
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
JP4282912B2 (en) * 2001-03-29 2009-06-24 東京エレクトロン株式会社 Vertical heat treatment equipment
US20020144706A1 (en) * 2001-04-10 2002-10-10 Davis Matthew F. Remote plasma cleaning of pumpstack components of a reactor chamber
US7390366B2 (en) * 2001-11-05 2008-06-24 Jusung Engineering Co., Ltd. Apparatus for chemical vapor deposition
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6827789B2 (en) * 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US6890596B2 (en) * 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
JP2004158549A (en) * 2002-11-05 2004-06-03 Tokyo Electron Ltd Substrate drying apparatus and substrate drying method
US6902648B2 (en) * 2003-01-09 2005-06-07 Oki Electric Industry Co., Ltd. Plasma etching device
JP2004265911A (en) * 2003-02-03 2004-09-24 Personal Creation Ltd System for processing substrate
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
JP2006216710A (en) * 2005-02-02 2006-08-17 Hitachi High-Technologies Corp Semiconductor manufacturing equipment
KR100731164B1 (en) * 2005-05-19 2007-06-20 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a shower head and method therof
JP4997842B2 (en) * 2005-10-18 2012-08-08 東京エレクトロン株式会社 Processing equipment
US8951351B2 (en) * 2006-09-15 2015-02-10 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects
US8852349B2 (en) * 2006-09-15 2014-10-07 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
KR100849929B1 (en) * 2006-09-16 2008-08-26 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof
JP5237820B2 (en) * 2006-11-15 2013-07-17 パナソニック株式会社 Plasma doping method
US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
JP2008192642A (en) * 2007-01-31 2008-08-21 Tokyo Electron Ltd Substrate processing apparatus
JP5034594B2 (en) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 Film forming apparatus, film forming method, and storage medium
JP5347294B2 (en) * 2007-09-12 2013-11-20 東京エレクトロン株式会社 Film forming apparatus, film forming method, and storage medium
US8465591B2 (en) * 2008-06-27 2013-06-18 Tokyo Electron Limited Film deposition apparatus
US8465592B2 (en) * 2008-08-25 2013-06-18 Tokyo Electron Limited Film deposition apparatus
US20090324826A1 (en) * 2008-06-27 2009-12-31 Hitoshi Kato Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium
US9416448B2 (en) * 2008-08-29 2016-08-16 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method
JP5423205B2 (en) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 Deposition equipment
US8808456B2 (en) * 2008-08-29 2014-08-19 Tokyo Electron Limited Film deposition apparatus and substrate process apparatus
JP5195175B2 (en) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 Film forming apparatus, film forming method, and storage medium
JP5276388B2 (en) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 Film forming apparatus and substrate processing apparatus
JP5280964B2 (en) * 2008-09-04 2013-09-04 東京エレクトロン株式会社 Film forming apparatus, substrate processing apparatus, film forming method, and storage medium
JP2010087467A (en) * 2008-09-04 2010-04-15 Tokyo Electron Ltd Film deposition apparatus, substrate processing apparatus, film deposition method, and recording medium with recorded program for implementing the film deposition method
JP5107185B2 (en) * 2008-09-04 2012-12-26 東京エレクトロン株式会社 Film forming apparatus, substrate processing apparatus, film forming method, and recording medium recording program for executing this film forming method
JP5253933B2 (en) * 2008-09-04 2013-07-31 東京エレクトロン株式会社 Film forming apparatus, substrate processing apparatus, film forming method, and storage medium
US8961691B2 (en) * 2008-09-04 2015-02-24 Tokyo Electron Limited Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method
JP5276387B2 (en) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 Film forming apparatus, substrate processing apparatus, film forming method, and recording medium recording program for executing this film forming method
JP2010084230A (en) * 2008-09-04 2010-04-15 Tokyo Electron Ltd Film deposition apparatus, substrate process apparatus, and turntable
FR2937112B1 (en) * 2008-10-13 2010-11-12 Amphenol Air Lb DEVICE FOR SEALING A DRIVING LINE, METHOD FOR SEALING A DRIVING THROUGH BELLING AND USE OF SUCH A DEVICE FOR THE SEALED HITCH OF AN AIRCRAFT RESERVOIR
JP5445044B2 (en) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 Deposition equipment
JP2010153769A (en) * 2008-11-19 2010-07-08 Tokyo Electron Ltd Substrate position sensing device, substrate position sensing method, film forming device, film forming method, program, and computer readable storage medium
JP2010126797A (en) * 2008-11-28 2010-06-10 Tokyo Electron Ltd Film deposition system, semiconductor fabrication apparatus, susceptor for use in the same, program and computer readable storage medium
US9297072B2 (en) * 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
JP5056735B2 (en) * 2008-12-02 2012-10-24 東京エレクトロン株式会社 Deposition equipment
JP5083193B2 (en) * 2008-12-12 2012-11-28 東京エレクトロン株式会社 Film forming apparatus, film forming method, and storage medium
KR20100093785A (en) * 2009-02-17 2010-08-26 세메스 주식회사 Dispensing unit and apparatus for processing a substrate including the same
US8707899B2 (en) * 2009-02-26 2014-04-29 Hitachi High-Technologies Corporation Plasma processing apparatus
JP5107285B2 (en) * 2009-03-04 2012-12-26 東京エレクトロン株式会社 Film forming apparatus, film forming method, program, and computer-readable storage medium
US20100227059A1 (en) * 2009-03-04 2010-09-09 Tokyo Electron Limited Film deposition apparatus, film deposition method, and computer readable storage medium
JP5141607B2 (en) * 2009-03-13 2013-02-13 東京エレクトロン株式会社 Deposition equipment
JP2010225718A (en) * 2009-03-23 2010-10-07 Tokyo Electron Ltd Method of separating workpiece, and workpiece processing device
JP5131240B2 (en) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 Film forming apparatus, film forming method, and storage medium
JP5287592B2 (en) * 2009-08-11 2013-09-11 東京エレクトロン株式会社 Deposition equipment
KR101732187B1 (en) * 2009-09-03 2017-05-02 에이에스엠 저펜 가부시기가이샤 METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD
TWI385272B (en) * 2009-09-25 2013-02-11 Ind Tech Res Inst Gas distribution plate and apparatus using the same
JP5257328B2 (en) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
JP5310512B2 (en) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 Substrate processing equipment
JP5553588B2 (en) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 Deposition equipment
US8034723B2 (en) * 2009-12-25 2011-10-11 Tokyo Electron Limited Film deposition apparatus and film deposition method
JP5497423B2 (en) * 2009-12-25 2014-05-21 東京エレクトロン株式会社 Deposition equipment
JP5392069B2 (en) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 Deposition equipment
JP5544907B2 (en) * 2010-02-04 2014-07-09 東京エレクトロン株式会社 Structure for gas shower and substrate processing apparatus
WO2011112617A2 (en) * 2010-03-12 2011-09-15 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
JP5820143B2 (en) * 2010-06-22 2015-11-24 株式会社ニューフレアテクノロジー Semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor manufacturing apparatus cleaning method
JP5732284B2 (en) * 2010-08-27 2015-06-10 株式会社ニューフレアテクノロジー Film forming apparatus and film forming method
JP5572515B2 (en) * 2010-10-15 2014-08-13 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP2012195565A (en) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc Substrate processing apparatus, substrate processing method, and manufacturing method of semiconductor device
TWI534291B (en) * 2011-03-18 2016-05-21 應用材料股份有限公司 Showerhead assembly
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
KR20130007149A (en) * 2011-06-29 2013-01-18 세메스 주식회사 Apparatus for treating substrate
US8826857B2 (en) * 2011-11-21 2014-09-09 Lam Research Corporation Plasma processing assemblies including hinge assemblies
DE102014100092A1 (en) * 2013-01-25 2014-07-31 Aixtron Se CVD system with particle separator
JP6145279B2 (en) * 2013-02-06 2017-06-07 東京エレクトロン株式会社 Gas introduction pipe connection structure and heat treatment apparatus using the same
KR101443792B1 (en) * 2013-02-20 2014-09-26 국제엘렉트릭코리아 주식회사 Gas Phase Etcher Apparatus
JP6115244B2 (en) * 2013-03-28 2017-04-19 東京エレクトロン株式会社 Deposition equipment
US9490149B2 (en) * 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
US9441792B2 (en) 2013-09-30 2016-09-13 Applied Materials, Inc. Transfer chamber gas purge apparatus, electronic device processing systems, and purge methods
CN105900218B (en) * 2014-01-16 2018-07-03 株式会社思可林集团 Substrate board treatment
US9852905B2 (en) * 2014-01-16 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for uniform gas flow in a deposition chamber
US10683571B2 (en) * 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
WO2015151147A1 (en) * 2014-03-31 2015-10-08 Ｓｐｐテクノロジーズ株式会社 Plasma processing device
KR101659560B1 (en) * 2014-08-26 2016-09-23 주식회사 테라세미콘 Reactor of apparatus for processing substrate
KR20160026572A (en) * 2014-09-01 2016-03-09 삼성전자주식회사 Apparatus for processing a substrate
JP6478847B2 (en) * 2015-07-08 2019-03-06 東京エレクトロン株式会社 Substrate processing equipment
JP6573498B2 (en) * 2015-07-22 2019-09-11 東京エレクトロン株式会社 Plasma processing equipment
WO2017209802A1 (en) 2016-06-03 2017-12-07 Applied Materials, Inc. Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
US10410943B2 (en) * 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
JP7042689B2 (en) * 2018-05-23 2022-03-28 東京エレクトロン株式会社 Dry cleaning method of susceptor and substrate processing equipment

Also Published As

Publication number Publication date
KR20190004836A (en) 2019-01-14
TWI718292B (en) 2021-02-11
JP6888159B2 (en) 2021-06-16
CN109478494B (en) 2023-07-18
US20200199730A1 (en) 2020-06-25
KR102204637B1 (en) 2021-01-19
TWI744140B (en) 2021-10-21
US10619235B2 (en) 2020-04-14
KR20210008160A (en) 2021-01-20
TW202113101A (en) 2021-04-01
JP2019522899A (en) 2019-08-15
WO2017209802A1 (en) 2017-12-07
CN116978818A (en) 2023-10-31
CN109478494A (en) 2019-03-15
JP6756853B2 (en) 2020-09-16
US10808310B2 (en) 2020-10-20
US20170349994A1 (en) 2017-12-07
TW201807219A (en) 2018-03-01
JP2020205434A (en) 2020-12-24
KR102303066B1 (en) 2021-09-16

Similar Documents

Publication Publication Date Title
SG11201803994VA (en) Microfluidic particle manipulation
SG11201808705XA (en) Particle manipulation
SG11201908396PA (en) Methods of treating tumor
SG11201807444PA (en) Transposase-mediated imaging of the accessible genome
SG11201407907XA (en) Apparatus and method for film formation
SG11201900772YA (en) Gene editing of car-t cells for the treatment of t cell malignancies with chimeric antigen receptors
SG11201908847TA (en) Apparatuses, systems and methods for imaging flow cytometry
SG11201806284TA (en) Low pressure separator having an internal divider and uses therefor
SG11201900442PA (en) Sorting of t lymphocytes in a microfluidic device
SG11201811173VA (en) Cleanroom control system and method
SG11201804420UA (en) Pre-coated shield for use in vhf-rf pvd chambers
SG11201810824UA (en) Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
SG11201901225VA (en) A method for forming a titania-coated inorganic particle
SG11201811289VA (en) Valve with erosion protection device
SG11201803715YA (en) Sealant composition
SG11201808669TA (en) Container with means for improved closure
SG11201805688XA (en) Method for processing solutions of biomolecules
SG11201805029VA (en) Furnace apparatus
SG11201805521XA (en) Method for quantification of purity of sub-visible particle samples
SG11202000275PA (en) Sub-block sealing for electrochemical separation devices
SG11201906903PA (en) Sub-nanometer-level substrate cleaning mechanism
SG11201803587UA (en) Enhanced stability filter integrity test
SG11201809018UA (en) Plasma abatement solids avoidance by use of oxygen plasma cleaning cycle
SG11201900270YA (en) Method of quantitative measurement of particle content using hydrated state imaging
SG11201811781XA (en) High resolution systems, kits, apparatus, and methods using magnetic beads for high throughput microbiology applications