MY103962A - Multiport memory - Google Patents

Multiport memory

Info

Publication number
MY103962A
MY103962A MYPI89000002A MYPI19890002A MY103962A MY 103962 A MY103962 A MY 103962A MY PI89000002 A MYPI89000002 A MY PI89000002A MY PI19890002 A MYPI19890002 A MY PI19890002A MY 103962 A MY103962 A MY 103962A
Authority
MY
Malaysia
Prior art keywords
word line
serial port
data transfer
storage section
memory cell
Prior art date
Application number
MYPI89000002A
Inventor
Toda Haruki
Ikawa Tatsuo
Ohshima Shigeo
Original Assignee
Toshiba Microcomputer Eng Corporation
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Microcomputer Eng Corporation, Toshiba Kk filed Critical Toshiba Microcomputer Eng Corporation
Publication of MY103962A publication Critical patent/MY103962A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM

Abstract

THIS INVENTION PROVIDES A MULTIPORT MEMORY INCLUDING A STORAGE SECTION A HAVING BIT LINES BL AND BL, A WORD LINE WL, A DATA TRANSFER GATE ? DT, AN DA DYNAMIC MEMORY CELL CS, AND A SERIAL PORT B HAVING A SERIAL ACCESS FUNCTION IN A COLUMN DIRECTION OF THE STORAGE SECTION, WHEREIN THE MEMORY INCLUDES A CIRCUIT FOR DISABLING A WORD LINE SIGNAL WL FOR SELECTING ONE WORD LINE UNDER THE CONDITIONS THAT A ROW ADDRESS STROBE SIGNAL RAS IS RAISED IN A TRANSFER CYCLE IN WHICH DATA HELD BY THE MEMORY CELL IS TRANSFERRED TO THE SERIAL PORT, AND THAT THE DATA TRANSFER TO THE SERIAL PORT IS COMPLETED BY THE DATA TRANSFER GATE ? DT. (FIG. 1)
MYPI89000002A 1988-01-19 1989-01-03 Multiport memory MY103962A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63008929A JPH07107792B2 (en) 1988-01-19 1988-01-19 Multiport memory

Publications (1)

Publication Number Publication Date
MY103962A true MY103962A (en) 1993-10-30

Family

ID=11706350

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI89000002A MY103962A (en) 1988-01-19 1989-01-03 Multiport memory

Country Status (6)

Country Link
US (1) US5007028A (en)
EP (1) EP0325105B1 (en)
JP (1) JPH07107792B2 (en)
KR (1) KR930007281B1 (en)
DE (1) DE68902317T2 (en)
MY (1) MY103962A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125892A (en) * 1990-09-06 1992-04-27 Samsung Electron Co Ltd Chip enable signal control circuit in dual port memory element
JPH04153979A (en) * 1990-10-15 1992-05-27 Mitsubishi Electric Corp Semiconductor device
JP2596208B2 (en) * 1990-10-19 1997-04-02 日本電気株式会社 Memory device
KR960004735B1 (en) * 1991-03-19 1996-04-12 후지쓰 가부시끼가이샤 Multiport memory
US5394172A (en) * 1993-03-11 1995-02-28 Micron Semiconductor, Inc. VRAM having isolated array sections for providing write functions that will not affect other array sections
US5502683A (en) * 1993-04-20 1996-03-26 International Business Machines Corporation Dual ported memory with word line access control
US5719890A (en) * 1995-06-01 1998-02-17 Micron Technology, Inc. Method and circuit for transferring data with dynamic parity generation and checking scheme in multi-port DRAM
US6209071B1 (en) 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
US6487207B1 (en) 1997-02-26 2002-11-26 Micron Technology, Inc. Shared buffer memory architecture for asynchronous transfer mode switching and multiplexing technology
US6263448B1 (en) 1997-10-10 2001-07-17 Rambus Inc. Power control system for synchronous memory device
KR100558552B1 (en) 2003-12-30 2006-03-10 삼성전자주식회사 Data access circuit of semiconductor memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633411A (en) * 1982-12-27 1986-12-30 Rockwell International Corporation Link quality analyzer
US4535428A (en) * 1983-03-10 1985-08-13 International Business Machines Corporation Multi-port register implementations
US4720819A (en) * 1983-12-30 1988-01-19 Texas Instruments Incorporated Method and apparatus for clearing the memory of a video computer
JPS61160898A (en) * 1985-01-05 1986-07-21 Fujitsu Ltd Semiconductor memory device
JPS6289149A (en) * 1985-10-15 1987-04-23 Agency Of Ind Science & Technol Multi-port memory system
JPS62287497A (en) * 1986-06-06 1987-12-14 Fujitsu Ltd Semiconductor memory unit

Also Published As

Publication number Publication date
DE68902317D1 (en) 1992-09-10
EP0325105A1 (en) 1989-07-26
KR890012315A (en) 1989-08-25
JPH07107792B2 (en) 1995-11-15
EP0325105B1 (en) 1992-08-05
DE68902317T2 (en) 1993-01-07
KR930007281B1 (en) 1993-08-04
US5007028A (en) 1991-04-09
JPH01184788A (en) 1989-07-24

Similar Documents

Publication Publication Date Title
US4758987A (en) Dynamic semiconductor memory with static data storing cell unit
KR920001758B1 (en) Pseudo-static memory device having internal self refresh circuit
KR950007834B1 (en) Semiconductor memory device
TW344134B (en) Programmable dynamic random access memory (DRAM)
US5251178A (en) Low-power integrated circuit memory
EP0264893A3 (en) Semiconductor memory
CA2011518A1 (en) Distributed cache dram chip and control method
WO1987002819A3 (en) Architecture for a fast frame store using dynamic rams
EP0031488A3 (en) Memory cell and its use in a random access matrix memory system
KR900015154A (en) Di-RAM integrated semiconductor memory and its test method
MY104082A (en) Internal synchronization type mos sram with address transition detecting circuit.
KR900006220B1 (en) Semiconductor memory device
KR920018757A (en) Memory Cell Array Partition Type Semiconductor Memory
MY103962A (en) Multiport memory
KR880010421A (en) Dynamic Random Access Memory with Open Bitline Structure
US5173878A (en) Semiconductor memory including address multiplexing circuitry for changing the order of supplying row and column addresses between read and write cycles
KR19980070149A (en) Gain memory cell with diode
US4079462A (en) Refreshing apparatus for MOS dynamic RAMs
US4578780A (en) Dual port type semiconductor memory
EP0834883A3 (en) Semiconductor nonvolatile memory device
KR920020720A (en) Dynamic Random Access Memory Device Improves Testability without Increased Supply Current
EP0339219A3 (en) Memory architecture
JPS5785255A (en) Memory storage for integrated circuit
KR920022292A (en) Semiconductor memory
KR920701977A (en) Dynamic random access memory with improved detection and refresh