KR20150078475A - Apparatus For Processing Substrate - Google Patents

Abstract

Disclosed is an apparatus for processing a substrate which can improve quality of a thin film formed on a substrate. The apparatus for processing a substrate according to the present invention comprises a chamber; a mounting means installed on the chamber and having the substrate mounted; a first electrode located on an upper part of the mounting means; a second electrode located on a lower part of the first electrode, and having multiple through holes; and one or more electrode rod extended from the lower surface of the first electrode to the through holes of the second electrode respectively, and detachably combined with the first electrode.

Description

[0001] Apparatus For Processing Substrate [

The present invention relates to a substrate processing apparatus capable of improving the quality of a thin film formed on a substrate.

In order to manufacture a solar cell, a semiconductor device, or a flat panel display, a semiconductor manufacturing process for forming a predetermined thin film, a thin circuit pattern, or an optical pattern on the surface of the substrate must be performed.

The semiconductor manufacturing processes are performed in a substrate processing apparatus optimally designed for each process, and in recent years, a substrate processing apparatus for performing a deposition process or an etching process using plasma is widely used.

A conventional substrate processing apparatus for forming a thin film (PECVD: Plasma Enhanced Chemical Vapor Deposition) using a plasma will be described with reference to FIG. 1 is a sectional view showing the structure of a conventional substrate processing apparatus.

As shown, the conventional substrate processing apparatus includes a chamber 11 and a plasma electrode 13 which are coupled to each other to form a space in which the substrate 50 is processed. The plasma electrode 13 is connected to an RF (Radio Frequency) power source 15 to receive RF power.

A susceptor 17 on which the substrate 50 is mounted and supported is provided so as to face the plasma electrode 13 on the lower inner side of the chamber 11 and the susceptor 17 functions as a counter electrode of the plasma electrode 13 It should be electrically grounded.

On the upper surface of the plasma electrode 13, a gas supply pipe 19 for supplying a mixed gas for forming a thin film to the substrate 50 is provided. The mixed gas may be a gas in which a process gas (or a source gas) and a dilution gas (or a reaction gas) are mixed.

A plate 21 for guiding the mixed gas introduced into the chamber 11 to be uniformly injected toward the substrate 50 is provided on the lower surface side of the plasma electrode 13. A diffusion space 13a is formed between the plasma electrode 13 and the plate 21 to divide the chamber 11 with a diffusion space 13a through which the mixed gas introduced through the gas supply pipe 19 is diffused. It is a matter of course that a plurality of injection holes 21b should be formed in the plate 21.

Thus, when RF power is supplied to the plasma electrode 13 while injecting the mixed gas, plasma discharge occurs between the plate 21 and the susceptor 17, and molecules of the process gas ionized by the plasma discharge are discharged to the substrate 50, so that a thin film is formed on the substrate 50.

In the conventional substrate processing apparatus as described above, the plasma electrode 13 and the susceptor 17 functioning as the counter electrode are disposed on the upper side and the lower side, respectively, with the substrate 50 interposed therebetween. Therefore, since the plasma discharge is generated toward the substrate 50, a plasma discharge is generated in the upper surface of the substrate 50. As a result, the substrate 50 is damaged by the plasma discharge and the quality of the thin film is deteriorated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus capable of minimizing substrate damage due to plasma.

Another object of the present invention is to provide a substrate processing apparatus which is easy to install an electrode for generating plasma and is easy to maintain.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a chamber; A chamber installed in the chamber and on which a substrate is placed; A first electrode positioned above the seating means; A second electrode located below the first electrode and having a plurality of through holes; And at least one electrode rod extending from the lower surface of the first electrode to the through-hole of the second electrode and detachably coupled to the first electrode.

The upper portion of the electrode is detachably coupled to the first electrode, the lower portion is located inside the through hole, and a plasma discharge space is formed between the outer circumferential surface of the lower portion of the electrode and the inner circumferential surface of the through hole. have.

The first gas required for processing the substrate and the second gas different from the first gas may be separated and diffused by the first electrode, the second electrode, and the electrode.

And an injection path for injecting the first gas may be formed in the electrode.

And a plurality of spray holes for spraying the second gas toward the plasma discharge space may be formed in the first electrode portion outside the electrode.

The lower surface of the first electrode may be formed with a coupling hole into which the upper end of the electrode is inserted.

And screw threads engaging with each other may be formed on the inner peripheral surface of the coupling hole and the outer peripheral surface of the upper end side of the electrode rod.

The first electrode may be formed with a first space formed on an upper surface of the first electrode and a through-path communicating the spray path of the electrode.

The lower end side of the injection path may be inclined in such a manner that the diameter gradually increases toward the lower side.

An orifice may be formed in at least one of the through-path and the injection path.

The diameter of at least a part of the through-passage may be smaller than the diameter of the injection path.

A flow path for supplying the second gas to the spray hole may be formed in the first electrode.

The first electrode and the second electrode function as a ground electrode and a plasma electrode, respectively, and a first insulating member may be provided on an outer surface of the second electrode.

The first electrode and the second electrode each function as a plasma electrode and a ground electrode, and a first insulating member may be provided on an outer surface of the first electrode.

Wherein an insulating plate is interposed between the first electrode and the second electrode, a through hole through which the electrode rod penetrates is formed on the insulating plate, and between the outer peripheral surface of the electrode rod and the inner peripheral surface of the through hole of the insulating plate, And a gap communicating with the plasma discharge space may be formed on the lower side.

The electrode may include a coupling portion inserted into the coupling hole and a protrusion extending from a lower surface of the coupling portion and having a diameter larger than a diameter of the coupling portion.

And a second insulating member may be interposed between the first electrode and the upper surface of the protrusion contacting the coupling portion.

The second insulating member may be inserted into the first electrode.

Wherein an insulating plate is interposed between the first electrode and the second electrode to penetrate the coupling portion and the insulating plate is supported by contact with the upper surface of the protrusion in contact with the coupling portion and the upper side of the insulating plate is communicated with the injection hole And a communication hole communicating with the plasma discharge space may be formed on the lower side.

A second space may be formed in which the insulating plate and the first electrode are spaced apart and the second gas sprayed through the spray hole is diffused between the electrode bar and the first electrode and the insulating plate adjacent to each other, .

A spacer for supporting the insulating plate so as to be spaced apart from the first electrode may be interposed in the coupling portion of the electrode.

The substrate processing apparatus according to the present invention is formed in a region where a high density plasma is formed at a portion where the substrate is not located. Therefore, it is possible to prevent or reduce damage to the substrate due to the plasma while performing the substrate processing using the reactive gas activated by the plasma.

Further, since the electrode processing apparatus according to the present invention can detachably connect the electrode, there is an advantage that the production and maintenance of the electrode can be facilitated.

In addition, the substrate processing apparatus according to the present invention can detachably connect the electrode rod, and can be applied to a plurality of processes or process conditions because the shape of a part of the electrode rod coupled according to the process can be different.

Further, the substrate processing apparatus according to the present invention can form a plurality of electrode rods detachably coupled to the lower surface of the first electrode, so that only a part of the electrode rods can be individually processed. Therefore, it is easy to manufacture and maintain.

Further, the substrate processing apparatus according to the present invention can provide a plurality of detachable gas flow channel extending means for extending the gas flow channels of the respective injection holes of the first plate having the plurality of jet holes toward the substrate, It is possible to improve the injection uniformity of the gas or to reduce the inflow of the reaction gas into the region where the high density plasma is generated.

Further, the substrate processing apparatus according to the present invention can detachably couple a plurality of gas flow channel expanding means, and can change the shape of a part of the gas flow channel expanding means coupled according to the process, It can also be applied to process conditions.

Further, the substrate processing apparatus according to the present invention can form a plurality of gas flow channel expanding means detachably coupled to the lower surface of the first plate having the ejection holes, so that only a part of the gas flow expanding means can be individually processed, Maintenance can be facilitated.

1 is a sectional view showing a configuration of a conventional substrate processing apparatus.
2 is a sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention;
3 is an exploded perspective view of the gas injection unit shown in Fig.
4A is a sectional view taken along the line "AA" in Fig.
4B is a sectional view taken along the line "BB" in Fig.
Figs. 5A to 5D are cross-sectional views corresponding to the "P" portion of Fig. 4A showing various shapes of the through-hole of the first electrode and the electrode of the electrode shown in Fig.
6 is a cross-sectional view showing a main portion showing the shape of an electrode of a substrate processing apparatus according to another embodiment of the present invention.
7 is a cross-sectional view of the main part showing another mounting structure of the electrode shown in FIG. 6;
FIG. 8 and FIG. 9 are cross-sectional views showing the main part showing another mounting structure of the electrode shown in FIG. 6;
10 (a) to 10 (d) are perspective views showing various shapes of the second insulating member shown in Figs. 8 and 9. Fig.
11 is a cross-sectional view showing a main portion showing the shape of an electrode of a substrate processing apparatus according to another embodiment of the present invention.
12 is a cross-sectional view of the main part showing another mounting structure of the electrode rod shown in FIG.
13 is a cross-sectional view showing a configuration of a substrate processing apparatus according to another embodiment of the present invention.

It should be noted that, in the specification of the present invention, the same reference numerals as in the drawings denote the same elements, but they are numbered as much as possible even if they are shown in different drawings.

Meanwhile, the meaning of the terms described in the present specification should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

The term "above" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, a substrate processing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a cross-sectional view showing the structure of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 3 is an exploded perspective view of the gas injection unit shown in FIG.

The substrate processing apparatus according to an embodiment of the present invention may include a chamber 111 in which a substrate 50 is processed and a lid 115 is coupled to the chamber 111. [ . The chamber 111 may have an upper wall, a lower wall and a side wall, and may have an upper portion with a side wall and a lower wall.

The chamber 111 may have a discharge port 112 for discharging a gas or the like and may be formed with an entrance (not shown) for loading or unloading the substrate 50. At this time, it is a matter of course that the entrance is selectively opened and closed.

A support unit 120 for supporting the substrate 50 may be installed on the lower surface of the inside of the chamber 111 to be movable up and down. The support unit 120 includes a support shaft 121 on which the substrate 50 is placed and a support shaft 123 on one side of which is coupled to the lower surface of the seat unit 121 and the other side is exposed to the outside of the chamber 111, And a bellows 127 enclosing the driving shaft 125 and the supporting shaft 123 for lifting or rotating the driving shaft 123 and sealing the space between the supporting shaft 123 and the chamber 111.

The position of the substrate 50 can be adjusted according to the characteristics of the thin film to be formed on the substrate 50 because the positioning unit 121 on which the substrate 50 is placed is moved up and down by the driving unit 125.

A gas supply part 130 for supplying a gas according to the characteristics of a thin film to be formed on the substrate 50 may be provided on an outer upper surface of the lead 115. The gas supply part 130 may include a first gas supply part 131, 2 gas supply unit 135, as shown in FIG.

The first gas supply unit 131 supplies gas to the first space 141a formed between the lead 115 and the first electrode 141 forming the upper side of the gas injection unit 140, The gas supply unit 135 supplies the gas to the flow path 141d (see FIG. 4B) formed inside the first electrode 141.

At this time, the first gas supply unit 131 can supply the first gas including the reactive gas, and the second gas supply unit 135 can supply the second gas different in composition from the first gas, have. It is natural that the first gas supply part 131 supplies the second gas and the second gas supply part 135 can supply the first gas.

A gas injection unit 140 for diffusing the first gas and the second gas supplied from the gas supply unit 130 and supplying the first gas and the second gas to the substrate 50 can be detachably installed on the inner upper surface side of the lead 115. [ The gas injection unit 140 preferably opposes the seat 121 on which the substrate 50 is placed.

The gas injection unit 140 may be detachably installed on the open upper end side of the chamber 111. [

The gas injection unit 140 will be described in detail with reference to Figs. 2 to 4B. 4A is a cross-sectional view taken along the line "A-A" in FIG. 3, and FIG. 4B is a cross-sectional view taken along the line "B-B" in FIG.

The gas injection unit 140 may include a first electrode 141, an electrode rod 143, an insulation plate 145, a second electrode 147, and a first insulation member 149.

The first electrode 141 may be formed of a metal such as aluminum or the like and may be formed in a plate shape having a predetermined thickness and may be coupled to the inner upper surface of the lead 115. The first electrode 141 functions as a ground electrode and is electrically grounded through the lead 115. [

A bending frame 142 bent upward can be formed on the rim of the first electrode 141. A bending frame 142 is provided between the lead 115 and the first electrode 141 to form a first gas supply unit A first space 141a through which the first gas supplied from the first electrode 131 is diffused is formed.

A plurality of electrode bars 143 may be detachably coupled to the first electrode 141 and a coupling hole 141b (see FIG. 3) in which the electrode rod 143 is inserted and coupled to the lower surface of the first electrode 141 . The inner circumferential surface of the engaging hole 141b and the outer circumferential surface of the upper side of the electrode rod 143 are connected to each other by threaded wires 141ba (143a, 143a) which are mutually engaged with each other so that the electrode rod 143 can be detachably coupled to the first electrode 141. [ Respectively.

The first electrode 141 may have a plurality of through holes 141c passing through the upper surface and the lower surface of the first electrode 141 and the electrode rod 143 may be inserted into the lower end of the through hole 141c A coupling hole 141b may be formed.

The electrode rod 143 may include a coupling portion formed with a thread 143a to be coupled to the first electrode 141 and a protrusion extending downward from the lower surface of the coupling portion to face the substrate 50 side. It is a matter of course that the first electrode 141 and the electrode rod 143 are electrically connected.

An injection path 143b is formed in the electrode rod 143 along the longitudinal direction of the electrode rod 143. The first gas introduced into the first space 141a passes through the through passage 141c and passes through the injection path 143b ). Thus, the first gas is injected through the lower end side of the electrode rod 143.

The first electrode 141 is connected to the lower surface of the first electrode 141 by a distance corresponding to the length of the electrode 141 protruding from the first electrode 141 Can be sprayed.

The diameter of the injection path 143b formed in the electrode rod 143 and the diameter of the through passage 141c formed in the first electrode 141 can be formed to be the same and communicate with each other.

The first electrode 141 may be provided with a flow path 141d through which the second gas supplied from the second gas supply unit 135 flows and the second gas of the flow path 141d may flow into the first electrode 141. [ And is sprayed through a plurality of spray holes 141e communicated with the flow path 141d. The spray holes 141e may be formed so as to surround the respective electrode rods 143.

A distribution unit (not shown) may be provided between the second gas supply unit 135 and the flow path 141d to distribute the second gas to the respective flow paths 141d.

An insulating plate 145 formed of a ceramic or the like may be coupled to the lower surface of the first electrode 141. The insulating plate 145 serves to insulate the first electrode 141 and the second electrode 147 or to maintain a potential difference.

The electrode rod 143 can penetrate the insulating plate 145. A through hole 145a is formed in the insulating plate 145 so that the electrode rod 143 can pass through and a gap G is formed between the inner circumferential surface of the through hole 145a and the outer surface of the electrode rod 143 . At this time, it is natural that the second gas injected through the injection hole 141e is injected into the gap G. [

The plate-shaped second electrode 147 is coupled to the lower surface of the insulating plate 145.

The second electrode 147 is formed with a through hole 147a in which the lower end side of the electrode rod 143 protruding to the lower side of the insulating plate 145 is located. The diameter of the through hole 147a of the second electrode 147 is larger than the diameter of the through hole 145a of the insulating plate 145 and the distance between the inner circumferential surface of the through hole 147a and the outer surface of the electrode 143 A space which is a plasma discharge space (PDS) to be described later is formed. It is natural that the plasma discharge space PDS and the gap G communicate with each other so that the second gas flows into the plasma discharge space PDS through the gap G and is injected toward the substrate 50 side.

The through hole 145a of the insulating plate 145 and the through hole 147a of the second electrode 147 are preferably concentric.

If the potential difference between the first electrode 141 and the second electrode 147 is greater than or equal to a predetermined magnitude, the electrode 143 coupled to the first electrode 141 has a potential equal to or similar to that of the first electrode 141, A space between the inner circumferential surface of the through hole 147a of the second electrode 147 and the outer surface of the lower end side of the electrode bar 143 which is a space between the two electrodes 147 and the electrode rod 143 forms a plasma discharge space PDS ). Each of the plasma discharge spaces PDS may be arranged in a lattice or zigzag form on the second electrode 147 to face the substrate 50.

When the plasma is generated around the second electrode 147 and the electrode rod 143, the second gas supplied to the plasma discharge space PDS is activated by the plasma and is injected into the substrate 50, And the gas is injected downward to the substrate 50 through the injection path 143b of the electrode rod 143. [ As a result, the thin film layer can be formed on the substrate 50 by reacting the activated second gas with the first gas.

A first insulating member 149 formed of ceramic may be detachably coupled to the bottom edge and the side surface of the second electrode 147. The first insulating member 149 can electrically insulate the second electrode 147 from the lead 115. [

 The gas injection unit 140 composed of the first electrode 141, the electrode 143, the insulating plate 145, the second electrode 147 and the first insulating member 149 is integrally formed as one module, And may be detachably coupled to the lead 115.

The substrate processing apparatus according to an embodiment of the present invention is formed with an electrode rod 143 separately and detachably coupled to the lower surface of the first electrode 141. Therefore, even when the gas injection unit 140 is assembled, only the electrode rod 143 can be coupled to the first electrode 141, and only the electrode rod 143 can be separated and repaired during maintenance of the electrode rod 143.

The electrode rod 143 may be formed in the shape of a circular column or a polygonal column. The lower end edge of the electrode rod 143 may be formed so as to be convex or concave rounded to suppress the occurrence of arcing.

The substrate processing apparatus according to an embodiment of the present invention generates a plasma discharge in a space between the lower end side outer peripheral surface of the electrode rod 143 and the inner peripheral surface of the through hole 147a of the second electrode 147, The high energy particles are prevented from being transferred to the substrate 50. As a result, the substrate 50 is prevented from being damaged by the plasma discharge, so that the quality of the thin film is improved.

The distance between the substrate 50 and the plasma discharge space PDS can be adjusted by adjusting the length of each electrode rod 143 so that the length of the electrode rod 143 protruding below the first electrode 141 can be adjusted. Can be adjusted. The spacing between the lower surface of the second electrode 147 and the upper surface of the substrate 50 can be adjusted according to the characteristics of the thin film to be formed on the substrate 50, have.

Also, the first electrode 141 can be detachably coupled with the electrode rod 143 having a different length. If the length of the electrode rod 143 is different, the plasma discharge space PDS can be changed in the space between the second electrode 147 and the electrode rod 143. A portion of the electrode rod 143 detachably coupled to the first electrode 141 has a different length so that the plasma discharge space PDS formed in a part of the plurality of through holes 147a of the second electrode 147 Can be adjusted to be different.

Meanwhile, the first gas is injected through the injection path 143b of the electrode rod 143, and the second gas is separated from the first gas to be injected from the injection hole 141e of the first electrode 141 to the gap G ) → plasma discharge space (PDS). Therefore, the formation of an abnormal thin film around the spray hole 141e is suppressed.

5A to 5D are cross-sectional views corresponding to the "P" portion of FIG. 4A showing various shapes of the through-hole of the first electrode and the injection path of the electrode according to the embodiment of the present invention.

As shown in FIG. 5A, the lower end of the jet path 191b of the electrode rod 191 may be inclined so that the diameter gradually increases toward the lower side so that the first gas can be jetted over a wide area .

An orifice 193ba may be formed in the injection path 193b of the electrode rod 193 or the first electrode 183 may be formed in the injection path 193b in order to increase the injection pressure of the first gas as shown in Figures 5B and 5C. The orifice 183ca can be formed in the through-hole 183c of FIG.

5D, when the electrode rod 195 is coupled to the first electrode 185, the through path 185c of the first electrode 185 and the injection path 195b of the electrode rod 195 can be easily The diameter of the injection path 195b of the electrode rod 195 can be made larger than the diameter of the through path 185c of the first electrode 185 so as to be able to communicate with each other.

6 is a cross-sectional view showing the shape of an electrode of a substrate processing apparatus according to another embodiment of the present invention.

As shown in the figure, the electrode rod 243 has a joint portion 243a inserted into the first electrode 241 and a protrusion 243a formed in a diameter larger than the diameter of the joint portion 243a and extending from the lower surface of the joint portion 243a. (243b). The diameter of the through hole 245a formed in the insulating plate 245 is substantially the same as the diameter of the engaging portion 243a. Since the insulating plate 245 is held in contact with the upper surface of the projecting portion 243b contacting the engaging portion 243a, exposure of the plasma is prevented, and abnormal deposition on the substrate 50 is prevented.

The upper surface of the insulating plate 245 is communicated with the spray hole 241e and the lower side of the insulating plate 245 is communicated with the plasma discharge space PDS It is natural that it should be formed.

FIG. 7 is a cross-sectional view showing another structure of the electrode rod shown in FIG. 6, which will be described.

The insulating plate 245 may be installed on the upper surface of the protruding portion 243b of the electrode rod 243 and spaced apart from the first electrode 241. [ A second space 241f through which the second gas injected through the injection hole 241e is diffused is formed between the adjacent electrode bar 243 and the first electrode 241 and the insulating plate 245. It is a matter of course that a communication hole 245b communicating with the second space 241f should be formed in the insulating plate 245 so that the second gas in the second space 241f can be injected toward the substrate 50 side.

A spacer 244 may be interposed between the insulating plate 245 and the first electrode 241 so that the insulating plate 245 may be securely mounted on the upper surface of the protruding portion 243b of the electrode rod 243. [ The spacer 244 may be provided to surround the coupling portion 243a of the electrode rod 243.

Figs. 8 and 9 are cross-sectional views illustrating another mounting structure of the electrode shown in Fig. 6, which will be described.

8, a second insulating member 248 is held in contact with the upper surface of the protruding portion 243b of each electrode rod 243, and the second insulating member 248 contacts the lower surface of the first electrode 241 / RTI > The second connection member 248 has an outer diameter larger than the diameter of the protrusion 243b of the electrode rod 243 and protrudes outside the protrusion 243b and contacts the first electrode 241.

The second insulating member 248 may be supported on the upper surface of the protrusion 243b of the electrode rod 243 and inserted into the lower surface of the first electrode 241 as shown in FIG.

10 (a) to (d) are perspective views showing various shapes of the second insulating member shown in Figs. 8 and 9, which will be described.

As shown in the figure, the second insulating member 248 has a shape (see FIG. 10A) in which the outer circumferential surface and the inner circumferential surface are circular, the outer circumferential surface is rectangular and the inner circumferential surface is circular (Fig. 10 (c)), and the outer peripheral surface has a polygonal shape such as a honeycomb shape and an inner peripheral surface has a circular shape (Fig. 10 (d)). The inner peripheral surface has a circular shape and the corner portion has a concave rounded shape It can be formed.

FIG. 11 is a cross-sectional view showing the shape of an electrode of a substrate processing apparatus according to another embodiment of the present invention, which will be described.

The first electrode 341 may include a first upper electrode 341a and a first lower electrode 341b positioned on the upper side and the lower side of the flow path 341d formed in the first electrode 341, The first upper electrode 341a and the first lower electrode 341b are sealed.

The electrode rod 343 may include a protrusion 343b having a smaller diameter than the diameter of the coupling part 343a and the coupling part 343a and extending downward from the lower surface of the coupling part 343a. The first lower electrode 341b is formed with an engaging hole 341ba having a shape corresponding to the engaging portion 343a and the protruding portion 343b and the protruding portion 343b extends from the upper surface of the first lower electrode 341b to the lower surface side . At this time, it is a matter of course that threaded lines are formed on the inner peripheral surface of the coupling hole 341ba where the outer peripheral surface of the coupling portion 343a and the outer peripheral surface of the coupling portion 343a are located. The upper surface of the coupling portion 343a and the upper surface of the first lower electrode 341b are preferably located on the same plane.

Fig. 12 is a cross-sectional view showing another structure of the electrode rod shown in Fig. 11, which will be described.

A second insulating member 348 may be disposed on one side of the outer circumferential surface of the protruding portion 343b of the electrode rod 343 so as to surround the protruding portion 343b and the second insulating member 348 may contact the first And may be inserted into the first lower electrode 341b of the electrode 341. [

The substrate processing apparatus according to this embodiment shown in FIGS. 2 to 9 is configured to couple the electrode to the lower surface of the first electrode, and the substrate processing apparatus according to this embodiment shown in FIGS. 11 and 12, And the electrode rod is inserted and coupled from the upper surface of the first lower electrode of the first electrode toward the lower surface side.

2 to 9, the upper and lower portions of the first electrode are not separated from each other, as compared with the method of coupling the electrode shown in FIGS. 11 and 12, There is an effect that it can be easily coupled to the first electrode.

The shapes of the protrusions of the electrode protruding to the lower side of the first electrode may be variously formed according to characteristics of the substrate to be processed.

When the protrusion of the electrode is formed larger than the coupling portion, the insulation plate can be supported on the upper surface of the protrusion, so that the second space is formed between the insulation plate and the first electrode .

FIG. 13 is a cross-sectional view showing the configuration of a substrate processing apparatus according to another embodiment of the present invention, and only differences from FIG. 2 will be described.

As shown in the figure, the first electrode 141 may be connected to the plasma power supply unit to function as a plasma electrode, and the second electrode 147 may function as a ground electrode. At this time, the first electrode 141 is insulated by the first insulating member 149a, and the second electrode 147 is electrically grounded via the lead 115. [

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

111: chamber
115: Lead
140: Gas injection unit
141: first electrode
143: Electrode
145: Insulation plate
147: second electrode

Claims (21)

chamber;
A chamber installed in the chamber and on which a substrate is placed;
A first electrode positioned above the seating means;
A second electrode located below the first electrode and having a plurality of through holes; And
And at least one electrode rod extending from the lower surface of the first electrode to the through hole of the second electrode and detachably coupled to the first electrode. The method according to claim 1,
An upper portion of the electrode is detachably coupled to the first electrode, a lower portion is located inside the through hole,
Wherein a plasma discharge space is formed between an outer peripheral surface of a lower portion of the electrode and an inner peripheral surface of the through hole. 3. The method of claim 2,
Wherein the first gas, the second gas, and the second gas, which are different from the first gas, are diffused by the first electrode, the second electrode, and the electrode. The method of claim 3,
And a spray path for spraying the first gas is formed in the electrode rod. 5. The method of claim 4,
And a plurality of spray holes for spraying the second gas toward the plasma discharge space are formed in the first electrode portion outside the electrode. 6. The method of claim 5,
Wherein a bottom surface of the first electrode is formed with a coupling hole into which an upper end side of the electrode is inserted and coupled. The method according to claim 6,
And screw threads are formed on the inner circumferential surface of the coupling hole and the outer circumferential surface of the upper end side of the electrode rod, the screw threads interdigitating with each other. 6. The method of claim 5,
Wherein the first electrode is formed with a first space formed on an upper surface of the first electrode and a through path communicating the spray path of the electrode. 9. The method of claim 8,
Wherein the lower end side of the injection path is inclined in such a manner that the diameter gradually increases toward the lower side. 9. The method of claim 8,
Wherein an orifice is formed in at least one of the through-path and the injection path. 9. The method of claim 8,
Wherein a diameter of at least a part of the through-passage is smaller than a diameter of the injection path. 6. The method of claim 5,
Wherein a flow path for supplying the second gas to the spray hole is formed inside the first electrode. 13. The method of claim 12,
The first electrode and the second electrode function as a ground electrode and a plasma electrode, respectively,
Wherein a first insulating member is provided on an outer surface of the second electrode. 13. The method of claim 12,
The first electrode and the second electrode function as a plasma electrode and a ground electrode, respectively,
Wherein a first insulating member is provided on an outer surface of the first electrode. The method according to claim 13 or 14,
An insulating plate is interposed between the first electrode and the second electrode,
A through hole through which the electrode rod passes is formed in the insulating plate,
Wherein a gap is formed between an outer circumferential surface of the electrode rod and an inner circumferential surface of the through hole of the insulating plate, the gap communicating with the spray hole on the upper side and communicating with the plasma discharge space on the lower side. 16. The method of claim 15,
Wherein the electrode rod includes a coupling portion inserted into the coupling hole and a projection extending from a lower surface of the coupling portion and having a diameter larger than a diameter of the coupling portion. 17. The method of claim 16,
And a second insulating member is interposed between the first electrode and the upper surface of the protrusion contacting the coupling portion. 18. The method of claim 17,
And the second insulating member is inserted into the first electrode. 17. The method of claim 16,
An insulating plate is interposed between the first electrode and the second electrode to penetrate the coupling portion,
Wherein the insulating plate is contact-supported on an upper surface of the protrusion contacting the coupling portion,
Wherein the insulating plate is formed with a communication hole communicating with the spray hole on an upper side and communicating with the plasma discharge space on a lower side thereof. 20. The method of claim 19,
Wherein the insulating plate and the first electrode are spaced apart from each other,
Wherein a second space is formed between the electrode bar and the first electrode and the insulating plate adjacent to each other and the second gas injected through the injection hole is diffused. 21. The method of claim 20,
Wherein a spacer for supporting the insulating plate so as to be spaced apart from the first electrode is provided at an engaging portion of the electrode.

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