KR20120073839A - Gas spraying apparatus and substrate processing apparatus having the same - Google Patents

Abstract

PURPOSE: A gas spraying device and a substrate processing device including the same are provided to remove particles attached to an insulation member and a gas supply unit by spraying cleaning gas between the gas supply unit and the insulation member. CONSTITUTION: A substrate support(200) is formed on the inner lower side of a reaction chamber. The reaction chamber includes a planar part(110), a lateral part(120), and a cover part(130). A gas spraying unit(400) is formed on the upper side of the reaction chamber and sprays process gas. An insulation member(300) is formed between the gas spraying unit and the reaction chamber. The power supply unit supplies a high frequency and a low frequency to the reaction chamber. The gas supply unit supplies process gas to the gas spraying unit.

Description

Gas spraying apparatus and substrate processing apparatus having the same {Gas spraying apparatus and substrate processing apparatus having the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas injection apparatus, and more particularly, to a substrate processing apparatus capable of reducing a vortex region of a process gas between a gas injection portion and an insulating member, and a substrate processing apparatus having the same.

In general, a semiconductor device and a flat panel display are manufactured by depositing and etching a plurality of thin films on an upper surface of a substrate to form elements of a predetermined pattern. That is, a semiconductor device or a flat panel display device is manufactured by depositing a thin film on the entire surface of a substrate using a deposition apparatus and etching a part of the thin film using an etching apparatus to have a predetermined pattern.

The thin film may be formed by various processes, and a chemical vapor deposition process is mainly used to supply a gaseous raw material into a reaction chamber into which a substrate is introduced to form a thin film. In addition, the plasma is used in accordance with the size of the substrate, the miniaturization and the high integration of the device, and the etching process is progressed as well as the thin film deposition using the gas activated by the plasma.

In such a CVD apparatus, a gas injection unit is positioned above the reaction chamber and a substrate mounting plate is positioned below the reaction chamber to inject a process gas from the gas injection unit onto the substrate. Gas injection parts are generally manufactured in a vertical structure. By the way, since the reaction chamber and the gas injection part are made of a conductive material such as aluminum, an insulating member is provided to insulate between them. That is, the insulating member is provided to surround the gas injection section. In addition, the insulating member is provided to be spaced apart from the gas injection unit at a predetermined interval in consideration of the expansion ratio of the gas injection unit.

By the way, the process gas injected from the gas injection part flows into the space between the gas injection part and the insulating member, and is vortexed, and part of it is attached to the surface of the gas injection part and the insulating member. In addition, the process gas vortexing in the space between the gas injector and the insulating member drops particles adhering to the surface of the gas injector and the insulating member. These particles fall on the substrate and are included in the thin film, thereby reducing the reliability of the thin film.

The present invention provides a substrate processing apparatus and a substrate processing apparatus that can reduce the vortex of the process gas between the gas injection portion and the insulating member.

The present invention provides a substrate processing apparatus and a substrate processing apparatus that can reduce the vortex by changing the flow direction of the process gas between the gas injection portion and the insulating member by forming a bent portion on the side of the gas injection portion.

The present invention provides a substrate processing apparatus and a substrate processing apparatus that can reduce particle generation during a process by removing the particles adhering to the gas injection portion and the insulating member by the cleaning process by injecting the cleaning gas from the side curved portion of the gas injection portion.

According to an aspect of the present invention, there is provided a gas injection apparatus including a bottom surface, a top surface and a side surface, a first space provided between the bottom surface and the top surface, and a plurality of first gas injection holes formed on the bottom surface; And an insulating member disposed surrounding the lateral outer side of the gas injector, wherein the gas injector has at least one bent portion formed on the side surface thereof.

It further comprises a gas distribution plate provided in the space in the gas injection unit.

The bent portion formed on the side surface protrudes outward from the side surface.

The bent part is provided with a second space therein, and the bent part is formed with a second gas injection hole downward.

According to another aspect of the present invention, there is provided a substrate processing apparatus including a reaction chamber having a reaction space; A gas injector provided above the reaction chamber and configured to inject a process gas into the reaction space; And an insulating member provided on an outer side of the gas injector, wherein the gas injector is provided with at least one bent part on a side surface thereof.

The gas injector has a first bent portion formed at an edge between the bottom surface and the side surface.

At least one second bent part is formed at a side of the gas injector.

The second bend protrudes from the side of the gas injector.

The second curved portion has a plurality of gas injection holes formed downward.

The gas injection unit is provided with at least two spaces separated therein, a process gas including a deposition gas, an etching gas, and a cleaning gas is supplied to one space, and the cleaning gas is supplied to another space.

The second bent part is connected to the other space to inject the cleaning gas through the plurality of gas injection holes.

The insulating member has an inclination such that an inner surface of the insulating member contacting the gas injecting portion moves downward from the side of the gas injecting portion.

In the gas injection apparatus of the embodiments of the present invention, a first bent part is provided at a corner portion between the bottom and side surfaces, and at least one second bent part is provided at a side surface. Therefore, the thickness uniformity of the edge of the substrate can be improved by the first bent portion, and the vortex region between the gas supply portion and the insulating member can be reduced by the at least one second bent portion on the side surface, thereby reducing the particle generation.

Further, by forming a gas injection hole in at least one second bent portion of the side surface and supplying the cleaning gas therethrough, the cleaning gas is injected between the gas supply unit and the insulating member before or after the main process such as a thin film deposition process or an etching process. Particles that may be attached to the gas supply and the insulating member can be removed.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
2 is a perspective view of a gas injection device according to an embodiment of the present invention.
3 (a) and 3 (b) show vortex regions of a conventional substrate processing apparatus and vortex regions of a substrate processing apparatus according to the present invention.
4 is a cross-sectional view of a gas injection apparatus according to another embodiment of the present invention.
5 is a schematic cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
6 is a perspective view of a gas dividing apparatus according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information. Wherein like reference numerals refer to like elements throughout.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a perspective view of a gas injection unit according to an embodiment of the present invention, Figure 3 is a conventional substrate processing apparatus and one embodiment of the present invention It is a figure which shows the vortex area of the substrate processing apparatus which concerns on an example. 3 is a cross-sectional view of a gas injection powder according to another embodiment of the present invention.

1, a substrate processing apparatus according to an embodiment of the present invention includes a reaction chamber 100 having a reaction space therein, a substrate support 200 provided at a lower side inside the reaction chamber 100, and a substrate support. The gas injection unit 400 provided above the reaction chamber 100 facing the 200 and injecting process gas, and an insulating member provided between the gas injection unit 400 and the reaction chamber 100 to insulate them ( 300, a power supply unit 500 for supplying high frequency and low frequency for exciting plasma in the reaction chamber 100, and a gas supply unit for supplying process gas such as deposition gas and cleaning gas to the gas injector 300 And 600.

The reaction chamber 100 includes a substantially circular flat portion 110 and a sidewall portion 120 extending upwardly from the flat portion 110 to be formed in a cylindrical shape having an open top to provide a predetermined reaction space therein. do. In addition, the reaction chamber 100 may be further provided with a cover portion 130 extending inwardly on the upper side of the side wall portion 120. That is, the reaction chamber 100 may include an opening corresponding to the diameter of the planar portion 110, including the planar portion 110 and the sidewall portion 120, and the planar portion 110 and the sidewall portion ( An opening smaller than the diameter of the flat part 110 may be provided at an upper side including the cover part 120 and the cover part 130. In this case, the opening provided by the cover 130 is the same as or larger than the diameter of the substrate 10. In addition, an entrance (not shown) through which the substrate 10 enters and exits is provided at one side of the side wall part 120, and at least one exhaust port is located in at least one area of the flat part 110 or at least one area of the side wall part 120. 140 is provided. The exhaust port 140 may be connected to an exhaust device (not shown) to adjust the pressure inside the chamber 100 by the exhaust device and exhaust the unreacted process gas. Meanwhile, the flat part 110, the side wall part 120, and the cover part 130 may be manufactured integrally, and may be separately manufactured and combined. In particular, the flat part 110 and the side wall part 120 may be integrally manufactured, and the cover part 130 may be separately manufactured to be detachably coupled. At this time, although not shown, a separate sealing member, such as an O-ring or a gasket, may be provided on the coupling surface of the side wall part 120 and the cover part 130. In addition, a separate fixing member for coupling and fixing the side wall part 120 and the cover part 130 may be further provided.

The substrate support 200 is provided below the reaction chamber 100 and is installed at a position facing the gas injector 300. The substrate support 200 may be provided with, for example, an electrostatic chuck so that the substrate 10 introduced into the reaction chamber 100 may be seated. In addition, the substrate support 200 may be provided in a substantially circular shape, but may be provided in a shape corresponding to the shape of the substrate 10 and may be made larger than the substrate 10. The substrate lifter 210 for moving the substrate support 200 up and down is provided below the substrate support 200. When the substrate 10 is seated on the substrate support 200, the substrate lift 210 moves the substrate support 200 to approach the gas injector 300. In addition, a heater (not shown) is mounted in the substrate support 200. The heater generates heat to a predetermined temperature to heat the substrate 10 so that a thin film deposition process or the like may be easily performed on the substrate 10. Meanwhile, a cooling tube (not shown) may be further provided inside the substrate support 200 in addition to the heater. In the cooling tube, the coolant is circulated in the substrate support 200 so that the cooling heat is transferred to the substrate 10 through the substrate support 200 to control the temperature of the substrate 10 to a desired temperature.

The insulating member 300 is provided to insulate the gas injection unit 400 and the reaction chamber 100. That is, the insulating member 300 is provided so that a part of the insulating member 300 is fixed to the lower side of the cover part 130 of the reaction chamber 100 and a part thereof is exposed to the opening. The gas injection unit 400 is fixed above the insulating member 300 exposed to the opening. That is, the gas injection unit 400 is fixed inside the insulating member 300, wherein the gas injection unit 400 and the insulating member 300 are disposed at predetermined intervals, for example, in consideration of the thermal expansion rate of the gas injection unit 400. For example, it is about 0.25-1 mm apart. In addition, the insulating member 300 is formed in a circular shape along the inner shape of the reaction chamber 100, that is, along the lower side of the cover 130, and the inner surface is formed with a predetermined inclination from the upper side to the lower side. That is, the gas injection unit 400 is fastened to the inner side of the insulating member 300, and the insulating member 300 has an inclination at an angle of about 30 ° from the upper side to the lower side thereof, and is spaced apart from the gas injection unit 400. It is made to go away. In this way, when the insulating member 300 is inclined, the amount of particles generated can be significantly reduced as compared with the case in which the inner surface of the insulating member 300 is vertically manufactured. On the other hand, the insulating member 300 can be produced using an insulating material such as quartz. That is, by forming the insulating member 300 of quartz having a low relative dielectric constant, the high frequency impedance between the gas injection unit 400 and the side wall portion 120 of the reaction chamber 100 is increased to suppress the leakage of high frequency, thereby reducing power loss or the like. The leakage of noise can be reduced and the occurrence of abnormal discharge can be suppressed. On the other hand, the insulating member 300 may be manufactured in a dual structure in which the upper side and the lower side are different in material, for example, the upper portion may be made of alumina and the lower portion may be made of quartz. Since quartz is poor in workability, the upper portion may be made of alumina having a high dielectric constant but excellent workability, for example, to easily process a screw hole for fixing the gas injection part 400.

The gas injector 400 is installed at a position facing the substrate support 200 at an upper portion of the reaction chamber 100, and injects a process gas such as a deposition gas into the lower side of the reaction chamber 100. As shown in FIG. 2, the gas injection unit 400 is made of an upper surface, a lower surface, and a side surface by using a conductive material such as aluminum, and is manufactured in a substantially circular cylindrical shape having an empty inside. 410 is provided, a plurality of gas injection holes 420 are provided on the lower surface. In addition, the gas injector 400 is provided with a gas distribution plate (not shown) therein to uniformly inject the process gas introduced into the gas injector 400 downward. The gas distribution plate has a structure in which a region corresponding to the gas supply hole 410 is blocked and a plurality of holes are formed in the remaining region. On the other hand, the gas injection unit 400 is protruded to the outside in the upper peripheral portion is provided with a flange portion 430. At this time, the insulating member 300 is provided below the cover part 130, and the flange part 430 of the gas injection part 400 is positioned above the insulating member 300 so that the flange part 430 is a screw or the like. It is fixed to the upper surface of the insulating member 300 by a coupling member (not shown). For example, a ring-shaped groove may be formed on the upper surface of the insulating member 300, and an O-ring, which is a ring-shaped resin encapsulant, may be bonded to the groove, and the lower surface of the flange portion 430 may be bonded to the insulating member 300. The top surface can be hermetically joined via an O-ring. Of course, the flange portion 430 may be coupled on the insulating member 300 in various ways in addition to the above manner. In addition, the flange portion 430 and the cover portion 130 is spaced apart a predetermined interval, they are provided with a pressing member 310 made of an insulating material on the upper side can press the flange portion 430 toward the insulating member 300 side. As such, the gas injection unit 400 is provided to hermetically close the opening above the reaction chamber 100. In addition, the gas injection unit 400 according to the present invention has a first bent portion 440 is formed in the corner between the lower surface and the side surface on which the gas injection hole 420 is formed. As such, since the first bent portion 440 is formed at the corner portion, the process uniformity of the edge of the substrate 10 opposite thereto may be improved. That is, when the first bent portion 440 is not formed at right angles and is formed at right angles, vortices are generated on the side surfaces, and the process gas injected from the gas injection hole 420 and the process gas in the vortex region A are formed on the substrate 10. The thin film is deposited on the edge of the substrate 10 to be thicker than other areas. When the first bend 440 is formed, the vortex can be reduced to reduce the thickness of the thin film deposited on the edge of the substrate 10. Can be. In addition, the gas injector 400 has a second bent portion 450 is formed on the side. For example, the second bent portion 450 is provided with a predetermined bend from the boundary between the flange portion 430 and the side surface to a predetermined region on the lower side. In this case, the second curved portion 450 may be provided to protrude a predetermined portion outward from the side of the gas injector 400, and the protruding portion may be formed to be bent. When the bend is formed on the side surface of the gas injector 400, the shape of the space between the insulating member 300 and the gas injector 400 may be deformed, thereby reducing the vortex area A. That is, when the second bent portion 450 is not formed and the side surface of the gas injector 400 has a vertical shape as shown in FIG. 3 (a), between the gas injector 400 and the insulating member 300. Since the deep space is provided and the process gas flows into the space, the vortex region A is large, but as shown in FIG. 3B, the second bent portion 450 is formed to form the gas injection unit 400 and the insulating member. The space between the 300 is reduced so that the vortex area A is reduced. Here, reference numeral B denotes a line separating the process region and the vortex region A. FIG. Therefore, the process gas adhering to the surfaces of the gas injection unit 400 and the insulating member 300 can be reduced, and the drop of particles due to the vortex of the process gas can be reduced.

The power supply unit 500 may include a high frequency power source 510, a low frequency power source 520, and a matcher 530. The high frequency power source 510 generates a high frequency for generating plasma in the reaction chamber 100, for example, generates a high frequency of 13.56 MHz. The low frequency power source 520 generates a low frequency for adjusting the energy intensity of the plasma. For example, the low frequency power source 520 generates a low frequency of 300 to 400 GHz. The matcher 530 matches the low frequency with the high frequency and supplies it to the reaction chamber 100. In addition, the matcher 530 supplies the maximum power in the reaction chamber 100 by generating an impedance according to the impedance of the reaction chamber 100, thereby generating an optimal plasma. That is, since the plasma power may be reduced and supplied into the reaction chamber 100 by the impedance of the reaction chamber 100, the plasma power may be applied to the reaction chamber 100 without being reduced. Detects the impedance of and generates an impedance accordingly to supply plasma power. For example, the matcher 530 detects the impedance of the reaction chamber 100 and generates an impedance imaginary component of a phase opposite to the imaginary component of the impedance of the reaction chamber 100 so that the impedance is equal to the pure resistance of the real component. do. In addition, the power supply unit 500 may further include a second high frequency power source (not shown) and a second matcher (not shown) for supplying high frequency power to the substrate support 200.

The gas supply unit 600 includes an injector 610 for supplying a process gas, such as a deposition gas and a cleaning gas, to the gas injector 400, and a plurality of gas storage units 622, 624, 626; 620 for storing the process gas. And a flow controller 632, 634, 636; 630, such as a valve, provided between the injector 610 and the plurality of gas storage units 620 to control the flow rate of the process gas. The injector 610 is connected to, for example, a gas supply hole 410 provided at an upper center portion of the gas injector 400, and the injector 610 is connected to a plurality of gas storage units through a plurality of gas supply lines 640. 620. Each gas supply line 640 is provided with a flow controller 630 such as a valve to control the flow rate of the process gas supplied from the gas supply 620. The gas storage unit 620 stores process gases such as deposition gas, etching gas, and cleaning gas. Various deposition gases may be used as the deposition gas, and an impurity gas and an inert gas for controlling the film quality of the deposition film may be supplied. In addition, the cleaning gas includes at least one of a gas containing fluorine, for example, CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , SF _6, and NF ₃ gas; Inert gas of at least one of helium, argon and nitrogen may be supplied.

Meanwhile, in one embodiment of the present invention, one bent part, that is, the second bent part 450 is provided on the side of the gas supply part 400, but as shown in FIG. 4, a plurality of bent parts, for example, Second and third bends 450 and 460 may be provided. At this time, the plurality of bends 450 and 460 provided on the side surface are provided with a step. For example, the third curved portion 460 partially protrudes outward from the side surface and is formed to be bent, and the second curved portion 450 provided above the third curved portion 460 is moved outward from the third curved portion 460. Some protrude and the part is formed to be bent.

As described above, the gas supply unit 400 according to the embodiments of the present invention has a first bent portion 440 provided at a corner portion between a lower surface and a side surface, and at least one bent portion, for example, a second and a third portion at a side surface thereof. Flexures 450 and 460 are provided. Accordingly, the thickness uniformity of the edge of the substrate 10 may be improved by the first bent part 440, and the gas supply part 400 and the insulating member 300 may be formed by the at least one bent part 450 and 460 of the side surface. It is possible to reduce the vortex area of the particle to reduce the particle generation.

In addition, the gas supply unit 400 according to the present invention may spray the cleaning gas from at least one bent portion 450 provided on the side. In this way, when the cleaning gas is injected from the curved portion of the side of the gas supply part 400, particles that may be attached to the gas supply part 400 and the insulating member 300 may be removed before or after the deposition process. Referring to the substrate processing apparatus according to another embodiment of the present invention as follows. Here, descriptions of contents overlapping with those described in the above embodiments will be omitted.

5 is a schematic cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention, and FIG. 6 is a perspective view of a gas injection unit according to another embodiment of the present invention.

5 and 6, a substrate processing apparatus according to another embodiment of the present invention includes a reaction chamber 100 having a reaction space therein, a substrate support 200 provided below the reaction chamber 100, A plurality of agents are provided above the reaction chamber 100 facing the substrate support 200 and inject process gas from the lower first gas injection holes 422 and are provided under the at least one bent portion 450 on the side surface. 2 gas injection unit 400 for injecting the cleaning gas from the gas injection hole 424, an insulating member 300 provided between the gas injection unit 400 and the reaction chamber 100 to insulate them, and a reaction chamber ( 100 includes a power supply unit 500 for supplying high frequency power and low frequency power for exciting plasma therein, and a gas supply unit 600 supplying process gas such as deposition gas and cleaning gas to the gas injection unit 400. do.

As shown in FIG. 6, the gas injection unit 400 is formed in a substantially circular cylindrical shape, and a first gas supply hole 412 is provided in an upper center portion, and at least one second gas supply hole 414 in an upper edge thereof. ) Is prepared. Here, the gas injection unit 400 is provided by separating the first space 416 connected to the first gas supply hole 412 and the second space 418 connected to the second gas supply hole 414. . For example, a partition wall 470 is provided inside the gas injector 400 to separate the first space 416 from the second space 418, and the partition wall 470 extends vertically from a vertical side surface to form a second wall 470. It may be provided to separate the protrusion 450. In addition, the inside of the gas injector 400 may be divided into the first and second spaces 416 and 418 in various ways. For example, the gas injector 400 may be divided into first and second cylinders having different diameters. A first cylinder having a small diameter is inserted into a second cylinder having a large diameter so that the space formed by the first cylinder and the second cylinder is the second space 418, and the space provided inside the first cylinder is the first It may also be a space 416. At this time, the second protrusion 450 is provided to protrude outward from the second cylinder. Meanwhile, process gases such as deposition gas, etching gas, and cleaning gas are supplied to the first space 416, and cleaning gas is supplied to the second space 418. That is, the first gas supply hole 412 connected to the first space 416 is connected to the first injector 612, and the first injector 612 may be a deposition gas, an etching gas, a cleaning gas, or the like. The process gases are supplied to the first space 416 by being connected to the first to third gas storage units 622, 624, and 626, respectively. In addition, a second gas supply hole 414 connected to the second space 418 is connected to the second injector 614, and the second injector 614 is a third gas storage unit 626 that supplies a cleaning gas. In connection with the cleaning gas, the cleaning gas is supplied to the second space 418. A plurality of first gas injection holes 422 are provided below the first space 416, and a plurality of second gas injection holes 424 are provided below the second space 418. That is, the first gas injection hole 422 is provided below the gas injection part 400, and the second gas injection hole 424 is provided below the second bent part 450 on the side of the gas injection part 400. . Therefore, process gases, such as deposition gas, etching gas, and cleaning gas, supplied to the first space 416 through the first gas supply hole 412 to the substrate 10 through the first gas injection hole 422. Sprayed. In addition, the cleaning gas supplied to the second space 418 through the second gas supply hole 414 is injected through the second gas injection hole 422 to be injected into the vortex region A. Therefore, the cleaning gas supplied through the second gas supply hole 424 may remove particles adhered to the gas injection unit 400 and the insulating member 300.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

100: reaction chamber 200: substrate support
300: insulating member 400: gas injection unit
500: power supply unit 600: gas supply unit

Claims (12)

A gas injection unit having an upper surface and a side surface, a first space provided between the lower surface and the upper surface, and a plurality of first gas injection holes formed on the lower surface; And
An insulation member disposed to surround the lateral outer side of the gas injection unit;
The gas injector is at least one bent portion formed on the side of the gas injection device.
The gas injection device according to claim 1, further comprising a gas distribution plate provided in a space in the gas injection unit.
The gas injection device of claim 1, wherein the curved portion formed on the side surface protrudes outward from the side surface.
The gas injection device of claim 3, wherein the curved portion has a second space therein, and the curved portion has a second gas injection hole formed downward.
A reaction chamber provided with a reaction space;
A gas injector provided above the reaction chamber and configured to inject a process gas into the reaction space; And
Insulating member provided on the outside of the gas injection portion,
And at least one bent portion is provided at a side of the gas injector.
The substrate processing apparatus of claim 5, wherein the gas injector has a first bent portion formed at an edge between a bottom surface and a side surface thereof.
The substrate processing apparatus of claim 6, wherein the gas ejection part has at least one second bend formed on a side surface thereof.
The substrate processing apparatus of claim 7, wherein the second curved portion protrudes from a side surface of the gas injection portion.
The substrate processing apparatus of claim 7, wherein the second curved portion has a plurality of gas injection holes formed downward.
The substrate of claim 9, wherein the gas injector has at least two spaces separated therein, a process gas including a deposition gas, an etching gas, and a cleaning gas is supplied to one space, and the cleaning gas is supplied to another space. Processing unit.
The substrate processing apparatus of claim 10, wherein the second curved portion is connected to the other space to inject the cleaning gas through the plurality of gas injection holes.
The substrate processing apparatus of claim 6, wherein the insulating member has an inclination such that an inner surface of the insulating member in contact with the gas injection portion is lowered from a side surface of the gas injection portion.

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