KR20110079323A - Image sensor and method for manufacturing the same - Google Patents

Image sensor and method for manufacturing the same Download PDF

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Publication number
KR20110079323A
KR20110079323A KR1020090136341A KR20090136341A KR20110079323A KR 20110079323 A KR20110079323 A KR 20110079323A KR 1020090136341 A KR1020090136341 A KR 1020090136341A KR 20090136341 A KR20090136341 A KR 20090136341A KR 20110079323 A KR20110079323 A KR 20110079323A
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South Korea
Prior art keywords
semiconductor substrate
device isolation
trench
layer
isolation layer
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KR1020090136341A
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Korean (ko)
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박재영
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주식회사 동부하이텍
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Priority to KR1020090136341A priority Critical patent/KR20110079323A/en
Publication of KR20110079323A publication Critical patent/KR20110079323A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: An image sensor and a manufacturing method thereof are provided to improve electric cross talk and an optical cross talk. CONSTITUTION: An image sensor includes the first element isolation film(120), a unit pixel, an interlayer insulating layer(150), a trench and the second element isolation film(170). The first element isolation film is formed in the front of a semiconductor substrate so that a pixel region is defined. The unit pixel includes a light sensing part and a readout circuit formed in a pixel region. The interlayer insulating layer includes a wiring formed on the front side of the semiconductor substrate. The trench is formed in a backside of the semiconductor substrate in correspondence to the element isolation film. The second element isolation film is formed in the trench.

Description

Image sensor and manufacturing method thereof {IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME}

Embodiments relate to an image sensor and a method of manufacturing the same.

An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is classified into a charge coupled device (CCD) image sensor and a CMOS image sensor (CIS). .

In general, an image sensor forms a photodiode on a silicon substrate by ion implantation. As the size of the photodiode is gradually reduced for the purpose of increasing the number of pixels without increasing the chip size, the image characteristic is reduced by reducing the area of the light receiving unit.

In addition, since the stack height is not reduced as much as the area of the light receiving unit is reduced, the number of photons incident on the light receiving unit also decreases due to a diffraction phenomenon of light called an airy disk.

As an alternative to overcome this, an attempt is made to receive light through the wafer back side to minimize the step difference of the light receiving unit, and to prevent the phenomenon of light interference caused by metal routing (back light receiving). Image sensor).

In such a back-receiving image sensor, there is no device isolation region on the rear surface of the substrate, and thus, there is a problem that is very vulnerable to optical cross talk.

The embodiment provides an image sensor capable of preventing cross talk and a method of manufacturing the same.

An image sensor according to an embodiment includes a first device isolation layer formed on a front side of a semiconductor substrate to define a pixel region; A unit pixel including a light sensing unit and a readout circuit formed in the pixel area; An interlayer insulating layer including wirings formed on a front side of the semiconductor substrate; A trench formed on a back side of the semiconductor substrate opposite to a front surface of the semiconductor substrate and formed on a rear surface of the semiconductor substrate so as to correspond to the first device isolation layer; And a second device isolation layer formed in the trench.

In another embodiment, a method of manufacturing an image sensor includes: forming a first device isolation layer on a front surface of a semiconductor substrate such that a pixel region is defined; Forming a unit pixel including a light sensing unit and a readout circuit in the pixel area; Forming an interlayer insulating layer including wiring on a front side of the semiconductor substrate; Forming a trench on a back side of the semiconductor substrate opposite to a front surface of the semiconductor substrate so as to correspond to the first device isolation layer; And forming a second device isolation layer in the trench.

The image sensor and the method of manufacturing the same according to the embodiment may simultaneously improve the electric crosstalk and the optical crosstalk in the rear light receiving image sensor.

That is, the first device isolation region may be formed on the front side of the semiconductor substrate, and the second device isolation region may be formed on the rear side of the semiconductor substrate.

In particular, since the electron generation region of the semiconductor substrate can be set by the second device isolation region, it is possible to fundamentally prevent optical crosstalk.

In addition, the second device isolation region is formed in a dual structure having different refractive indices, and the light sensitivity of the unit pixel can be improved since the path of incident light can be changed.

Hereinafter, a back light receiving image sensor and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings.

In the description of the embodiments, where it is described as being formed "on / under" of each layer, it is understood that the phase is formed directly or indirectly through another layer. It includes everything.

7, 8 and 9 are cross-sectional views of an image sensor according to an embodiment.

The image sensor according to the embodiment includes a first device isolation layer 120 formed on the front side of the semiconductor substrate to define a pixel region; A unit pixel including an optical sensing unit 130 and a readout circuit 140 formed in the pixel area; An interlayer insulating layer 150 including wirings M1 and M2 formed on a front side of the semiconductor substrate 100; Trenchs formed on the back side of the semiconductor substrate 100 opposite to the front surface of the semiconductor substrate 100 and formed on the rear surface of the semiconductor substrate 100 to correspond to the first device isolation layer 120. 160; And a second device isolation layer 170 formed in the trench 160.

The color filter 200 or the micro lens 210 may be disposed on the rear surface of the semiconductor substrate 100 corresponding to the unit pixel.

The second device isolation layer 170 may be formed of an insulating material or a metal material.

The rear surface of the semiconductor substrate 100 may be separated for each unit pixel by the second device isolation layer 170. Accordingly, crosstalk can be prevented by adjusting the photocharge generating region in the semiconductor substrate 100.

Referring to FIG. 8, the second device isolation layer 170 is formed on the first insulating layer 180 such that the first insulating layer 180 and the trench 160 formed on the surface of the trench 160 are gap-filled. It includes a second insulating layer 190 formed on. For example, the first insulating layer 180 may have a first refractive index, and the second insulating layer 190 may have a second refractive index greater than the first refractive index.

For example, the refractive index of the first insulating layer 180 may be 1.0 to 1.46, and the refractive index of the second insulating layer 190 may be 1.68 to 3.0.

Since the outer and inner sides of the second device isolation layer 170 have different refractive indices, light incident to neighboring pixels having an inclination angle may be incident to the corresponding pixel by the second device isolation layer 170. have. Accordingly, it is possible to prevent the light sensing ratio and crosstalk of the light sensing unit corresponding to the unit pixel.

Referring to FIG. 9, a second conductivity type layer 300 may be formed on the rear surface of the semiconductor substrate 100.

For example, the p + layer may be formed, but is not limited thereto. The second conductivity type layer may neutralize a charge trap at an interface on a back side surface of the semiconductor substrate.

In this case, the second device isolation layer 170 may be formed on the rear surface of the second conductivity type layer 300 and the semiconductor substrate 100.

A second device isolation layer 170 may be formed on the second conductive layer 300 and the semiconductor substrate 100 to improve the full well characteristic.

The image sensor according to the embodiment may prevent the electrical crosstalk by the first device isolation film formed on the front surface of the semiconductor substrate, and effectively prevent the optical crosstalk by the second device isolation film formed on the rear surface of the semiconductor substrate.

Hereinafter, a method of manufacturing an image sensor according to an embodiment will be described with reference to FIGS. 1 to 9.

First, as illustrated in FIG. 1, a pixel region is defined by forming a first device isolation layer 120 on a front side of a semiconductor substrate 100.

The semiconductor substrate 100 may be a high concentration p-type substrate (p ++). The front side of the semiconductor substrate 100 may include a p-type epi layer 110 having a low concentration by performing an epitaxial process.

An ion implantation layer 105 may be formed on the entire surface of the semiconductor substrate 100. That is, in the embodiment, the lower portion of the semiconductor substrate 100 may be easily removed by forming the ion implantation layer 105 before the wiring process. The ion implantation layer 105 may be formed by implanting ions such as hydrogen (H) or helium (He), but is not limited thereto.

When the ion implantation layer 105 is formed, the backside of the semiconductor substrate 100 is easily removed using the ion implantation layer 105, rather than removing the backside of the semiconductor substrate 100 by back grinding. It can be removed stably. Accordingly, the manufacturing yield of the back light receiving image sensor can be significantly increased.

The first device isolation layer 120 may be formed on the front side of the epi layer 110 of the semiconductor substrate 100 by an STI process. Although not shown, an ion implantation region may be further formed to isolate the light sensing unit 130. The ion implantation region may be formed before or after the formation of the first device isolation layer 120.

Next, a unit pixel including the light sensing unit 130 and the readout circuit 140 is formed in the pixel region of the semiconductor substrate 100.

The light sensing unit 130 may be a photodiode.

The light sensing unit 130 may be formed in the semiconductor substrate 100 by a pn junction formed by an n-type ion implantation region and a p-type ion implantation region, but is not limited thereto.

By the p-type ion implantation region, excess electrons and the like can be prevented. In addition, the embodiment may form a PNP junction to obtain a charge dumping effect.

The readout circuit 140 for signal processing is formed on the semiconductor substrate 100 on which the light sensing unit 130 is formed.

For example, the readout circuit 140 may include a transfer transistor, a reset transistor, a drive transistor, and a select transistor, but is not limited thereto.

Next, the interlayer insulating layer 150 and the wiring are formed on the front side of the semiconductor substrate 100. For example, the wiring may include a first metal M1 and a second metal M2.

Meanwhile, a carrier wafer (not shown) may be bonded onto the interlayer insulating layer 150 including the wiring. The carrier wafer may be a means for handling the semiconductor substrate 100.

Referring to FIG. 2, a portion of the back side opposite to the front side of the semiconductor substrate 100 is removed.

For example, the lower side thereof is removed based on the ion implantation layer 105 of the semiconductor substrate 100.

In other words, the heat treatment is performed on the ion implantation layer 105 to hydrogenate the hydrogen ions, and then cut and remove the hydrogen ions with a blade or the like, and the upper side of the semiconductor substrate 100 remains as a liner layer. Will be. Thereafter, a planarization process may be performed on the rear surface of the cut semiconductor substrate 100.

Alternatively, the opposite side of the front side of the semiconductor substrate 100 may be removed by a back graining process.

Accordingly, a high concentration p layer (p ++) that is a back side of the semiconductor substrate 100 may be exposed.

Alternatively, as shown in FIG. 9, a second conductive type layer (p +) 300 may be formed on the rear surface of the semiconductor substrate 100.

The second conductivity type layer 300 may neutralize the charge trap at the interface of the back surface of the semiconductor substrate 100.

Next, a photoresist pattern 10 is formed on the back surface of the semiconductor substrate 100.

The photoresist pattern 10 may be patterned to correspond to the unit pixel. In this case, the opening 15 of the photoresist pattern 10 may selectively expose the rear surface of the semiconductor substrate 100 corresponding to the position of the first device isolation layer 120.

Referring to FIG. 3, a trench 160 is formed on the rear surface of the semiconductor substrate 100.

The trench 160 may be formed on the rear side of the semiconductor substrate 100 to correspond to the first device isolation layer 120.

The trench 160 may be formed through an etching process using the photoresist pattern as an etching mask.

The trench 160 may be formed by etching the high concentration p ++ region and the p-type epitaxial layer 110 of the semiconductor substrate 100 to a predetermined depth.

Referring to FIG. 4, a second device isolation layer 170 is formed in the trench 160.

The rear surface of the semiconductor substrate 100 may be separated for each unit pixel by the second device isolation layer 170.

The second device isolation layer 170 may be formed by gap filling a metal material or an insulating material in the trench 160.

For example, the second device isolation layer 170 may be formed of a metal such as tungsten, aluminum, and titanium. In particular, since the second device isolation layer 170 is formed of metal, incident light may be prevented from entering the light sensing unit of the adjacent pixel instead of the corresponding pixel.

For example, the second device isolation layer 170 may be formed of the same oxide film or nitride film as the first trench 160.

As shown in FIGS. 5 and 6, the second device isolation layer 170 may be formed to have different refractive indices n in the trench 160.

Referring to FIG. 5, a first insulating layer 180 is formed along the surface of the trench 160.

The first insulating layer 180 may be formed of a material having a first refractive index. For example, the first refractive index may be 1.0 to 1.46.

Referring to FIG. 6, a second insulating layer 190 is formed on the first insulating layer 180 such that the trench 160 is gap-filled.

The second insulating layer 190 may be formed of a material having a second refractive index greater than the first refractive index. For example, the second refractive index may be 1.68 to 3.0.

For example, the first insulating layer 180 may be SiO 2 (n = 1.46) and the second insulating layer 190 may be SiN (n = 2.05), but is not limited thereto.

The second device isolation layer 170 may be formed by filling a material having a small refractive index on the outer surface of the trench 160 and filling a material having a large refractive index inside the trench 160.

Since the second device isolation layer 170 has a double layer structure having different refractive indices, light incident at an inclination angle is refracted to a corresponding pixel by the second device isolation layer 170 and incident to the light sensing unit 130. Can be. That is, the second device isolation layer may be a total reflection law applied.

Accordingly, the incident light may be refracted by the second device isolation layer 170 to the light detecting unit 130 of the corresponding pixel, thereby improving light reception of a unit pixel.

Referring to FIG. 7, a color filter 200 is formed on the rear surface of the semiconductor substrate 100.

The color filter 200 may be formed one by one for each unit pixel using a dyed photoresist and separate colors from incident light.

For example, the color filter 200 may be a red, green, and blue color filter.

Thereafter, the micro lens 210 is formed on the color filter 200.

The micro lens 210 may be formed in the form of a convex lens, and may condense light with a light sensing unit of a corresponding unit pixel.

The first device isolation layer 120 is formed on the front side of the semiconductor substrate 100, and the second device isolation layer 170 is formed on the back side of the semiconductor substrate 100 to form the semiconductor. Crosstalk of light incident on the rear surface of the substrate 100 may be prevented.

In particular, since the incident of light in the back-receiving image sensor is made through the back of the substrate, and red, green, and blue regions are formed from the substrate surface, it is possible to prevent the occurrence of cross talk for the blue signal located at the bottom of the light sensing unit. Can be.

Accordingly, the light sensitivity of the image sensor may be uniform.

8 is a cross-sectional view illustrating a color filter 200 and a micro lens 210 formed on a rear surface of the semiconductor substrate 100 including a second device isolation layer 170 having a double sidewall structure.

9 is a cross-sectional view illustrating a second device isolation layer 170 having a double sidewall structure selectively formed on the second conductivity type layer 300 and the semiconductor substrate 100.

Light passing through the micro lens 210 and the color filter 200 may be incident to the corresponding light sensing unit. In this case, the light incident at the inclination angle may be refracted by the second device isolation layer 170 and may be incident to the light sensing unit 130 of the corresponding pixel. Accordingly, the light sensitivity of the image sensor can be improved.

The present invention is not limited to the described embodiments and drawings, and various other embodiments are possible within the scope of the claims.

1 to 9 are cross-sectional views illustrating a manufacturing process of an image sensor according to an embodiment.

Claims (10)

A first device isolation layer formed on the front side of the semiconductor substrate to define a pixel region; A unit pixel including a light sensing unit and a readout circuit formed in the pixel area; An interlayer insulating layer including wirings formed on a front side of the semiconductor substrate; A trench formed on a back side of the semiconductor substrate opposite to a front surface of the semiconductor substrate and formed on a rear surface of the semiconductor substrate so as to correspond to the first device isolation layer; And And a second device isolation layer formed in the trench. The method of claim 1, The second device isolation layer is formed of an insulating material or a metal material. The method of claim 1, The second device isolation film, A first insulating layer formed on a surface of the trench and having a first refractive index; And And a second insulating layer formed on the first layer to gap fill the trench, and having a second refractive index greater than the first refractive index. The method of claim 1, And a second conductivity type layer formed on the back side of the semiconductor substrate, And the second device isolation layer is formed on a rear surface of the second conductivity type layer and the semiconductor substrate. The method of claim 1, And a color filter or a micro lens formed on a rear surface of the semiconductor substrate corresponding to the unit pixel. Forming a first device isolation layer on the front side of the semiconductor substrate such that the pixel region is defined; Forming a unit pixel including a light sensing unit and a readout circuit in the pixel area; Forming an interlayer insulating layer including wiring on a front side of the semiconductor substrate; Forming a trench on a back side of the semiconductor substrate opposite to a front surface of the semiconductor substrate so as to correspond to the first device isolation layer; And And forming a second device isolation layer in the trench. The method of claim 6, The second device isolation layer is formed by gap-filling an insulating material in the trench. The method of claim 6, The second device isolation layer is formed by gap-filling a metal material in the trench. The method of claim 6, Forming the second device isolation film, Forming a first insulating layer having a first refractive index on a surface of the trench; And Forming a second insulating layer having a second refractive index greater than a first refractive index on the first insulating layer such that the trench is gap-filled. The method of claim 6, Forming a second conductivity type layer on a back surface of the semiconductor substrate, and then forming the second device isolation layer.
KR1020090136341A 2009-12-31 2009-12-31 Image sensor and method for manufacturing the same KR20110079323A (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120248560A1 (en) * 2011-03-29 2012-10-04 Samsung Electronics Co., Ltd. Image Sensors
KR20160026299A (en) * 2014-08-29 2016-03-09 삼성전자주식회사 image sensor and manufacturing method thereof
US9466629B2 (en) 2014-06-23 2016-10-11 Samsung Electronics Co., Ltd. Image sensor and method of fabricating the same
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
CN111480235A (en) * 2018-11-23 2020-07-31 深圳市汇顶科技股份有限公司 Image sensor and method for manufacturing the same

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
US8941199B2 (en) * 2011-03-29 2015-01-27 Samsung Electronics Co., Ltd. Image sensors
US20120248560A1 (en) * 2011-03-29 2012-10-04 Samsung Electronics Co., Ltd. Image Sensors
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US11069737B2 (en) 2013-06-29 2021-07-20 Sionyx, Llc Shallow trench textured regions and associated methods
US9466629B2 (en) 2014-06-23 2016-10-11 Samsung Electronics Co., Ltd. Image sensor and method of fabricating the same
KR20160026299A (en) * 2014-08-29 2016-03-09 삼성전자주식회사 image sensor and manufacturing method thereof
US11488996B2 (en) 2014-08-29 2022-11-01 Samsung Electronics Co., Ltd. Image sensor and manufacturing method thereof
CN111480235A (en) * 2018-11-23 2020-07-31 深圳市汇顶科技股份有限公司 Image sensor and method for manufacturing the same
CN111480235B (en) * 2018-11-23 2023-10-27 深圳市汇顶科技股份有限公司 Image sensor and method of manufacturing the same

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