KR20100045239A - Cmos image sensor having different refraction index insulation layer for prevention crosstalk and method for manufacturing the same - Google Patents

Cmos image sensor having different refraction index insulation layer for prevention crosstalk and method for manufacturing the same Download PDF

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Publication number
KR20100045239A
KR20100045239A KR1020080104334A KR20080104334A KR20100045239A KR 20100045239 A KR20100045239 A KR 20100045239A KR 1020080104334 A KR1020080104334 A KR 1020080104334A KR 20080104334 A KR20080104334 A KR 20080104334A KR 20100045239 A KR20100045239 A KR 20100045239A
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insulating film
layer
forming
semiconductor substrate
photodiode
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KR1020080104334A
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Korean (ko)
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박병준
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삼성전자주식회사
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Publication of KR20100045239A publication Critical patent/KR20100045239A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: An image sensor and a manufacturing method thereof are provided to form minute cell structure which does not have crosstalk by forming a relatively large insulating layer on a red light photodiode. CONSTITUTION: A handling semiconductor substrate is classified into a photodiode region, an APS array circuit region, and a peripheral circuit region. A plurality of inter-layer insulating films and a metal line layer(175,190) is formed on the handling semiconductor substrate. A plurality of CMOS transistors are formed in the APS array circuit region and the peripheral circuit region. A plurality of impurity photo diodes are formed in the photodiode region. A back side first insulating layer(205) and a second insulating layer(210) are arranged on a plurality of impurity photodiodes and prevents the crosstalk. A color filter(225,227,228) and a lens(240) are formed on the back side first insulating layer and the second insulating layer.

Description

Image sensor having a mixed-color insulating film structure having different refractive indices and manufacturing method thereof {CMOS IMAGE SENSOR HAVING DIFFERENT REFRACTION INDEX INSULATION LAYER FOR PREVENTION CROSSTALK AND METHOD FOR MANUFACTURING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor CMOS image sensor device and a method of manufacturing the same, and more particularly, to form an insulating film layer having a larger refractive index than adjacent pixels so as to prevent crosstalk in red light pixels. It relates to a method for obtaining the and a structure of a semiconductor device using the same.

The image sensor converts the optical image into an electrical signal. Recently, with the development of the information and communication industry and the digitization of electronic devices, image sensors with improved performance have been used in various fields such as digital cameras, camcorders, mobile phones, PCS (personal communication systems), game devices, security cameras, and medical micro cameras. have.

Increasing the degree of integration of pixels to meet the increased resolution of the image sensor results in a smaller volume of photoelectric conversion elements, such as photodiodes, per unit pixel, resulting in lower sensitivity.

The general CMOS image sensor 10 includes an active pixel array region 20 and a CMOS control circuit 30 as shown in FIG. The active pixel array region 20 includes a plurality of unit pixels 22 arranged in a matrix form. The CMOS control circuit 30 positioned around the active pixel array region 20 includes a plurality of CMOS transistors, and provides a constant signal to each unit pixel 22 of the active pixel array region 20. Or control the output signal.

FIG. 2 is an equivalent circuit diagram of the unit pixel 22 of FIG. 1.

Referring to FIG. 2, the unit pixel 22 is configured to generate a photodiode PD that generates light charge by applying light, and charges generated by the photodiode PD to a floating diffusion region (FD). The transfer transistor Tx transports, the reset transistor Rx periodically resets the charge stored in the floating diffusion region FD, and serves as a source follower buffer amplifier. A drive transistor DX buffers a signal according to the charge charged in the diffusion region FD, and a select transistor Sx serving as a switch for selecting the pixel 22.

Since the general CMOS image sensor receives the selective light through the front surface, a large amount of light is absorbed or lost while passing through the thick interlayer insulating film, so that the final amount of light is collected. There is a lot of optical cross talk that is accumulated in neighboring pixels due to severe refraction as it passes.

In order to solve this conventional problem, a CMOS image sensor having a back light receiving and back side illumination structure has been developed as a next generation image sensor structure.

3 is a cross-sectional view of a CMOS image sensor having a general back side illumination structure.

An interlayer insulating film 88, 80, 70 and metal wirings 85, 75 are formed on the handling substrate 90, a peripheral circuit transistor 65 and a photodiode 60 are formed, and a photodiode ( 60, 62, and 64 are formed on the micro lens 98 or the like.

A general back side illumination CMOS image sensor structure made of the above-described configuration is also provided with adjacent blue and green photodiodes 62 and 64 having a large red light wavelength, which is a selective light passing through the lens in the red light pixel diode 60 region. The light may be refracted into the () region to become a source of crosstalk and dark current.

As the image sensor cell of such a structure becomes smaller, the neighboring pixel spacing becomes narrower, and unwanted light penetrates into the adjacent structure, causing mixing color defects during the operation of the image sensor.

Recently, with the development of the information and communication industry and the digitization of electronic devices, image sensors with improved performance are being used in various fields such as digital cameras, camcorders, mobile phones, personal communication systems (PCS), game devices, security cameras, medical micro cameras, and the like. . As the integration of semiconductor products is accelerated, the unit cell area is greatly reduced, and the line width of the pattern and the spacing of the patterns are significantly narrowed. The unit cell area is reduced, but the electrical characteristics required by the device must be maintained and low power is required.

Since the general CMOS image sensor has a structure of receiving light through the front surface, a large amount of light is absorbed or lost while passing through the thick interlayer insulating film, so that the final amount of light is concentrated on the photodiode. There is a lot of optical crosstalk that accumulates in neighboring pixels due to severe refraction.

In order to solve the problem of the general CMOS image sensor, the present invention has a back side illumination structure, and the insulating film structure between the photodiode and the color filter has a relatively high refractive index on the red light pixel diode. A CMOS image sensor formed of a large insulating film and having an adjacent pixel, that is, an upper part of a green and blue selective color light photodiode, forms an insulating film having a small refractive index and is prevented from being refracted into a pixel boundary region, thereby preventing crosstalk. will be.

SUMMARY OF THE INVENTION An object of the present invention is to provide an insulating film structure between a photodiode and a color filter in a cell structure of a back side illumination CMOS image sensor, wherein a red light pixel is formed of an insulating film having a relatively high refractive index, and adjacent green, An upper portion of the blue selective color light photodiode forms an insulating film having a small refractive index to prevent red color light from being refracted to an adjacent photodiode region, thereby providing a CMOS image sensor semiconductor device without crosstalk.

Another object of the present invention is to form a first conductivity type epi layer on a semiconductor substrate, an element isolation film on the semiconductor substrate, form a floating diffusion region FD, a peripheral transistor, and a source drain impurity layer, and After forming an interlayer insulating film and a metal wiring layer on the substrate, a handling substrate is formed, the semiconductor substrate is turned over, the semiconductor substrate is removed, the first conductive layer epitaxial layer is exposed, and the first refractive index is relatively small on the first conductive layer epitaxial layer. Forming an insulating film, removing the first insulating film on the red light pixel, forming a second insulating film having a relatively high refractive index, and forming a color filter and a lens on the first insulating film and the second insulating film, and having no color mixing phenomenon. Inexpensive and simple fabrication of semiconductors with back side illumination image sensor structures There is.

A method of manufacturing a back side illumination CMOS image sensor cell according to an embodiment of the present invention for achieving the above object is to form a first conductivity type epi layer on a semiconductor substrate, and the device on the semiconductor substrate Forming a separator, forming a floating diffusion region FD, a peripheral transistor, and a source drain impurity layer, forming an interlayer insulating film, a metal wiring layer, and a protective film on the semiconductor substrate, forming a handling substrate, and inverting the semiconductor substrate to partially turn the semiconductor substrate. Exposing the first conductive layer epitaxial layer, forming a first insulating film having a first refractive index on the first conductive layer epitaxial layer, and removing the first insulating film on a red light pixel. An insulating film is formed, and a color filter and a lens are formed on the first second insulating film.

As described above, according to the present invention, in a back side illumination CMOS image sensor structure, an insulating film having a relatively high refractive index is formed on a red light photodiode so that selected red light entering through a lens is adjacent to green and blue. Since it is not refracted by the selective color photodiode, it is possible to easily form a fine cell structure without crosstalk.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

With respect to the embodiments of the present invention disclosed in the text, specific structural to functional descriptions are merely illustrated for the purpose of describing embodiments of the present invention, embodiments of the present invention may be implemented in various forms and It should not be construed as limited to the embodiments described in.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific form disclosed, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

 Example

Referring to FIG. 4, the semiconductor substrate 100 is divided into an area in which an APS array, a shared device, and a peripheral circuit are to be formed.

 All embodiments of the present invention use an N-type or P-type semiconductor substrate.

The first conductive high concentration epitaxial layer 105 is formed on the semiconductor substrate 100. The first conductivity type high concentration epi layer 105 is formed to reduce the resistance of the substrate to a high concentration deep well layer.

The high concentration deep well layer 105 is formed by inserting P-type impurities B, Ga, In, etc. in the process of forming the epi layer on the semiconductor substrate 100, or proceeding the process in the form of ion implantation of only necessary parts different from the drawings. can do.

The present invention was formed by using an epi-process as shown in order to simultaneously form the first conductive high-concentration impurity and the first conductive-type low-concentration epi layer by putting different concentrations of impurities while using an epi-forming process.

If necessary, the deep well 105 made of only the first conductivity type impurity may be formed later, without forming the portion as shown in the drawing.

A first conductive type low concentration epi layer 110 is formed on the first conductive type high concentration epi layer 105 formed on the semiconductor substrate 100. The first conductivity type epitaxial layer 110 is a low concentration layer having a lower impurity concentration than the first conductivity type epitaxial layer 105 with a thickness of about 10 μm as a space where semiconductor devices such as a well and a photodiode device isolation layer are to be formed. Form.

As mentioned above, the first conductive epitaxial layer 105 and the first conductive epitaxial layer 110 may be sequentially formed by controlling impurity concentrations in the same process chamber.

Referring to FIG. 5, different conductive wells 115 and 120 are formed in the first conductivity-type low concentration epitaxial layer 110 to form a CMOS transistor circuit, and the wells 115 and 120 and the photodiode are formed. The device isolation layer 125 is formed so that the devices can be separated from each other in the space to be separated. The device isolation layer 125 is formed using a typical shallow trench isolation (STI) process.

Referring to FIG. 6, photodiodes 135, 137, and 139 are formed in the region where the photodiode is to be formed using the photoresist mask 130. In the process of forming the photodiodes 135, 137, and 139, the photodiode is formed in the first conductive epitaxial layer, in order to form a vertical diode, a second conductive impurity layer is formed in the lower layer and the first layer is formed in the upper layer. Only when the conductive impurity layer is formed, the depletion region is formed in the portion where the photodiode 135, 137, and 139 and the first conductive type low concentration epitaxial layer 110 are contacted, so that the device can be operated.

The left photodiode 135 operates by selecting red light, the central photodiode 137 operates by selecting green light, and the right photodiode 139 is designed to select blue light.

Therefore, when the depth of the photodiode 135 is deeper than the maximum wavelength of the red light, all the red light can be captured to increase the sensitivity, and the energy is controlled so that the second conductivity type impurity layer can be formed to a depth of 5um.

Referring to FIG. 7, the gate insulating layer 140 is formed on the APS array region and the peripheral circuit region, and the gate electrode 145 is formed. Covering the photodiode mask 148 in the photodiode region, the second conductive low concentration source drain impurity layer 145 and the first conductivity type low concentration source drain impurity layer 150 are disposed on the first conductive low concentration epitaxial layer under the gate electrode side surface. Form.

Although not shown in the figure, a transfer transistor having a first channel and a second channel is formed on the side of the photodiode 139.

Referring to FIG. 8, the nitride film 153 is formed on the entire surface of the substrate and the photodiode region is covered with the photoresist mask 154, and the spacer 155 is anisotropically etched on the sidewall of the transistor gate electrode 145 of the peripheral circuit region. Form.

After forming the spacer 155, a second conductivity type high concentration source drain impurity layer 158 and a first conductivity type high concentration source drain impurity 160 layer are formed.

9 and 10, a first interlayer insulating layer 165 is formed on the first conductive type low concentration epitaxial layer 110 and the gate electrode 145. The first interlayer insulating layer 165 may be formed of HDP, CVD, or the like, to form an etch stop layer 170 after planarization, and to form a first metal wiring structure 175 in the contact hole after forming a contact hole. The contact hole and the first metal wiring structure 175 may be formed of copper as a wiring layer by a damasking method, if necessary.

The second interlayer insulating layer 180 is formed on the etch stop layer 170. Like the first interlayer insulating layer 165, the second interlayer insulating layer 180 is formed of PVD, CVD, or the like, and after the planarization, an etch stop layer 185 is formed, a contact hole is formed, and a second metal wiring structure 190 is formed. The protective film 195 is formed.

Referring to FIG. 11, a handling wafer 200 is attached onto the passivation layer 195. After attaching the handling wafer 200, the entire semiconductor substrate is turned upside down so that the handling wafer 200 becomes a lower portion, and the semiconductor substrate 100 that has been lowered in the meantime is removed by a thinning process to thereby remove the first conductive type high concentration epi. Allow layer 105 to be exposed.

On the exposed first conductive type high concentration epitaxial layer 105, a rear surface first insulating layer 205 having a relatively small refractive index is formed. It is preferable that the first insulating layer 205 having a small refractive index is made of an oxide film (SiO 2) such as HDP.

If the first conductive type high concentration epitaxial layer 105 is not formed in the first half process, the first conductive type high concentration impurity is implanted thinly after removing the semiconductor substrate 100.

In addition, an anti-reflection film (not shown) is formed before the first insulating layer 205 having the small refractive index is formed. The antireflection film (not shown) is formed to form a nitride film / oxide film / nitride film stacked structure.

12 and 13, only the red light photodiode 135 pixel region is partially removed by the photolithography process to form a hole.

After hole formation, a CMP planarization etch stop layer and a red light optimal absorption layer (not shown) are formed as necessary.

A rear side second insulating layer 210 having a relatively high refractive index is formed in a hole formed by partially removing the rear side first insulating layer 205 only in the pixel region of the red light photodiode 135. The backside second insulating film 210 having a relatively large refractive index is preferably made of a silicon oxynitride film (SiON) when the backside first insulating film is a silicon oxide film system.

The silicon oxynitride film is preferably formed by PE-CVD using silane (SiH 4) and nitrogen (N 2) as the source gas. The silicon oxynitride layer (SiON) can adjust the refractive index according to the nitrogen content, deposition thickness.

Accordingly, the film quality is controlled and formed so that the refractive index of the rear second insulating film 210 can be formed relatively between the rear first insulating film 205 and the rear second insulating film 210.

Referring to FIG. 14, color filter red (225), green (227), blue (228), and light shielding insulating film (220) layers are formed on the first and second insulating films 205 and 210 on the rear surface. Form.

An upper planarization layer 230 is formed on the color filter layers 225, 227, and 229 and the light blocking insulating layer 220, and a microlens 240 is formed on the color filter layers 225, 227, and 229.

The light passing through the microlens 240 is selectively selected by the color filters 225, 227, and 229, and the selected color light is photodiode through the rear first insulating layer 205 and the second insulating layer 210. Are accumulated at (135, 137, 139).

Referring to FIG. 15, the red light is selected by the red filter R and proceeds to the grape diode region through the back insulation layer.

The left figure illustrates a process in which red light selected by the red filter proceeds when an insulating film having a single refractive index is formed under the color filter.

As shown in the figure, some red light at two color (R, G) filter layer boundaries (dotted ellipses) goes straight to the neighboring area in an undesired direction, accumulates in neighboring green pixels beyond the magnetic pixel red light photodiode and crosstalks. Show what causes it.

According to Snell's law of refraction, when light passes through different media, if the rate of deposition is relatively large, the speed of light is relatively low. Therefore, light is refracted at the interface of different media.

Referring to the drawing on the right, the insulating layers having different refractive indices are formed under the color filters R and G. When an insulating film having a relatively high refractive index is disposed below the red filter, some selected red light paths bend the light toward the insulating film having a relatively large refractive index at the two insulating film interfaces (dotted ellipses).

This phenomenon is caused by the above-mentioned Snell's law of refraction, and the color filter image sensor of the present invention, which applies this principle, has an interface with a difference in deposition rate when some red light with a large wavelength passes to another adjacent color light photodiode. It is possible to obtain an effect of improving optical cross talk by refracting and not crossing the boundary.

As described above, it is possible to prevent crosstalk to neighboring pixels as red light is incident through an insulating film having a different refractive index and to increase light receiving efficiency, so that no crosstalk occurs, thus providing a clear and highly integrated image sensor. It can be made easy.

In addition, the system equipped with such a CMOS image sensor can be connected to a memory card using NAND or NOR flash to easily create a system that can store and play a high-definition screen simply.

In addition, it is possible to obtain a vivid color screen by applying it to digital devices that require various image sensors, and to apply and obtain real-time image with real-time image. System, telemedicine, etc. can be realized.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

1 is a layout illustrating a general CMOS image sensor.

2 is a circuit diagram showing a general CMOS image sensor.

3 is a cross-sectional view of a typical back side illumination CMOS image sensor structure.

4 and 15 are cross-sectional views illustrating a method of manufacturing a back side illumination CMOS image sensor device having a backside insulating film having different refractive indices according to an embodiment of the present invention.

<Description of the reference numerals for the main parts of the drawings>

100 semiconductor substrate 105 first conductivity type high concentration impurity layer

110: first conductivity type low concentration impurity epi layer

115, 120: N well, P well

125: device isolation layer 135, 137, 139: photodiode

140: gate dielectric layer 145: gate electrode

155: gate sidewall spacer

165: first interlayer insulating film 180: second interlayer insulating film

175,190: metal wiring

195: protective film 200: handling substrate

205: rear portion first insulating film 210: rear portion second insulating film

220: light shielding films 225, 227, 228: color filters

230: planarization film 240: lens

Claims (6)

A handling semiconductor substrate divided into a photodiode region, an APS array circuit region, and a peripheral circuit region; A plurality of interlayer insulating films and metal wiring layers formed on the handling semiconductor substrate; A plurality of CMOS transistors formed in the APS array circuit region and a peripheral circuit region; A plurality of impurity photodiodes formed in the photodiode region; A second insulating film arranged on the plurality of impurity photodiodes, the second insulating film being adjacent to the first insulating film having a different refractive index to prevent mixing; and And a color filter and a lens formed on the first insulating film and the second insulating film having different refractive indices. The semiconductor device according to claim 1, wherein the rear film second insulating film deposition rate is relatively larger than the first insulating film refractive index. The semiconductor device according to claim 1, wherein the selective light passing through the second insulating film is red light. The semiconductor device according to claim 1, wherein the selective light passing through the first insulating film is green or blue light.  Forming a first conductivity type low concentration impurity layer on the semiconductor substrate; Forming a plurality of photodiodes in the first conductivity type low concentration impurity layer;  Forming a plurality of CMOS transistors on the first conductivity type low concentration impurity layer; Forming a plurality of interlayer insulating films and metal wiring layers on the CMOS transistors and forming a protective film;  Forming a handling semiconductor substrate on the passivation layer; Thinning the semiconductor substrate to derive a first conductive layer low concentration impurity layer; Forming a back surface first insulating film and a second insulating film having different refractive indices on the first conductive layer low concentration impurity layer; And forming a color filter and a micro lens on the first insulating film and the second insulating film on the rear surface. 6. The method of claim 5, further comprising forming a first conductivity type high concentration impurity layer before forming the first conductivity type low concentration impurity layer.
KR1020080104334A 2008-10-23 2008-10-23 Cmos image sensor having different refraction index insulation layer for prevention crosstalk and method for manufacturing the same KR20100045239A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2387202A1 (en) 2010-05-14 2011-11-16 LG Electronics Inc. Electronic device and method of sharing contents thereof with other devices
CN103972257A (en) * 2014-05-29 2014-08-06 豪威科技(上海)有限公司 Stack type image sensor manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2387202A1 (en) 2010-05-14 2011-11-16 LG Electronics Inc. Electronic device and method of sharing contents thereof with other devices
CN103972257A (en) * 2014-05-29 2014-08-06 豪威科技(上海)有限公司 Stack type image sensor manufacturing method

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