KR20050068835A - Regulation method of chemical supply pressure - Google Patents
Regulation method of chemical supply pressure Download PDFInfo
- Publication number
- KR20050068835A KR20050068835A KR1020030100649A KR20030100649A KR20050068835A KR 20050068835 A KR20050068835 A KR 20050068835A KR 1020030100649 A KR1020030100649 A KR 1020030100649A KR 20030100649 A KR20030100649 A KR 20030100649A KR 20050068835 A KR20050068835 A KR 20050068835A
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- KR
- South Korea
- Prior art keywords
- pressure
- chemical
- nitrogen
- flow rate
- supplying
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은 케미컬 공급압력의 조절방법에 관한 것으로, 화학기계연마장비로부터 케미컬을 공급하기 위한 질소압력을 디지털 압력스위치와 유량조절기를 이용함으로써, 질소의 압력과 유량을 수치적으로 정확하게 확인 가능하여 질소의 압력 기준설정이 용이하고, 아울러 유량의 미세조절이 용이하도록 한 것이다. The present invention relates to a method for adjusting the chemical supply pressure, and by using a digital pressure switch and a flow controller for nitrogen pressure for supplying chemicals from chemical mechanical polishing equipment, the pressure and flow rate of nitrogen can be checked numerically and accurately. The pressure reference of the easy to set, and also to facilitate the fine control of the flow rate.
본 발명은, 질소압력으로 케미컬을 공급하는 단계에서, 질소압력은 디지털압력 스위치를 이용하여 압력을 검출하면서 조절하고, 또한 유량조절기를 이용하여 유량을 미세조절하는 케미컬 공급압력의 조절방법이 제공된다. The present invention, in the step of supplying the chemical at the nitrogen pressure, the nitrogen pressure is adjusted while detecting the pressure by using a digital pressure switch, and there is also provided a method of adjusting the chemical supply pressure to finely control the flow rate using the flow controller .
Description
본 발명은 케미컬 공급압력의 조절방법에 관한 것으로, 보다 상세하게는 화학기계연마장비로부터 케미컬을 공급하기 위한 질소압력을 디지털 압력스위치와 유량조절기를 이용함으로써, 질소의 압력과 유량을 수치적으로 정확하게 확인 가능하여 질소의 압력 기준설정이 용이하고, 아울러 유량의 미세조절이 용이하도록 한 것이다. The present invention relates to a method for adjusting the chemical supply pressure, and more specifically, by using a digital pressure switch and a flow controller for nitrogen pressure for supplying chemicals from chemical mechanical polishing equipment, the pressure and flow rate of nitrogen are numerically corrected. As it is possible to check the pressure reference of nitrogen, it is easy to fine-tune the flow rate.
일반적으로, 반도체 장비에서 사용되는 화학기계적연마(CMP : Chemical Mechanical Polishing) 장비은, 특정의 물질층에 대해 표면을 평탄화시키는 방법으로서, 기계적 힘을 통해 연마하는 동시에 슬러리(slurry)를 통한 화학적 반응을 일으켜 반도체 기판 상의 특정의 물질층을 평탄화하는 장비이다.In general, chemical mechanical polishing (CMP) equipment used in semiconductor equipment is a method of planarizing a surface for a specific material layer, and the chemical reaction is performed through a slurry while polishing through mechanical force. Equipment for planarizing a specific layer of material on a semiconductor substrate.
이러한 작업을 위하여 화학기계적연마장비의 용기에 케미컬을 임시저장하는 단계와; 질소압력으로 케미컬을 공급하는 단계와; 공급되는 케미컬을 이용하여 기판을 클리닝 하는 단계로 이루어지며, 상기 질소압력으로 케미컬을 공급하는 단계에서 질소 압력은 질소압력 스위치로 조절된다.Temporarily storing the chemical in a container of the chemical mechanical polishing equipment for this operation; Supplying the chemical at nitrogen pressure; The substrate is cleaned using the supplied chemical, and the nitrogen pressure is controlled by a nitrogen pressure switch in the step of supplying the chemical at the nitrogen pressure.
이를 보다 상세히 설명하면, 화학기계적연마장비에 구비된 용기에는 케미컬(예를들어 NH4OH,HF)을 일정량 공급하기 위하여 임시로 저장된다.In more detail, the container provided in the chemical mechanical polishing equipment is temporarily stored in order to supply a certain amount of chemical (eg, NH 4 OH, HF).
그리고 상기 용기에 저장된 케미컬은 질소 압력에 의하여 공급되어져 기판을 클리닝 하게 되는데, 이때, 상기 질소의 압력을 조절하기 위하여 질소압력 스위치가 사용된다.And the chemical stored in the container is supplied by the nitrogen pressure to clean the substrate, at this time, a nitrogen pressure switch is used to adjust the pressure of the nitrogen.
여기서 상기 질소 압력 스위치는, 듀얼 압력 스위치이면서 아날로그 방식으로 이루어져 있다. 따라서, 상기 질소압력 스위치가 아날로그 방식인 기구적인 힘에 의존하여 고압 및 저압을 검출하게 되는데, 이때 유량을 조절하기 위한 별도의 장치가 없어 질소의 정확한 기준을 정할 수 없고, 아울러 유량의 확인과 유량을 전혀 조절할 수 없는 문제가 발생되었다. Here, the nitrogen pressure switch is a dual pressure switch and made of an analog system. Therefore, the nitrogen pressure switch detects the high pressure and the low pressure depending on the mechanical force of the analog method, and there is no separate device for adjusting the flow rate, so it is not possible to determine the exact standard of nitrogen, and to confirm the flow rate and the flow rate. There was a problem that can not be adjusted at all.
본 발명은 상기와 같은 문제점을 해소하기 위해 발명된 것으로, 화학기계연마장비로부터 케미컬을 공급하기 위한 질소압력을 디지털 압력스위치와 유량조절기를 이용함으로써, 질소의 압력과 유량을 수치적으로 정확하게 확인 가능하여 질소의 압력 기준설정이 용이하고, 아울러 유량의 미세조절이 용이하도록 한 것이다. The present invention has been invented to solve the above problems, by using a digital pressure switch and a flow regulator for the nitrogen pressure for supplying the chemical from the chemical mechanical polishing equipment, it is possible to accurately check the pressure and flow rate of nitrogen numerically Therefore, it is easy to set the pressure reference of nitrogen, and to facilitate the fine adjustment of the flow rate.
상기와 같은 목적을 달성하기 위한 본 발명은, 질소압력으로 케미컬을 공급하는 단계에서, 질소압력은 디지털압력 스위치를 이용하여 압력을 검출하면서 조절하고, 또한 유량조절기를 이용하여 유량을 미세조절하는 케미컬 공급압력의 조절방법에 기술적 특징이 있다. The present invention for achieving the above object, in the step of supplying the chemical to the nitrogen pressure, the nitrogen pressure is adjusted while detecting the pressure by using a digital pressure switch, and also the chemical fine adjustment of the flow rate using the flow controller There is a technical characteristic of the method of regulating the supply pressure.
이하 본 발명의 바람직한 일 실시예를 첨부된 예시도면에 의거하여 설명하기로 한다. 도 2는 본 발명의 케미컬 공급압력의 조절방법을 도시한 순서도이다.Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. 2 is a flowchart illustrating a method of adjusting the chemical supply pressure of the present invention.
첨부된 도면을 참조하면, 화학기계적연마장비의 용기에 케미컬을 임시저장하는 단계와; 질소압력으로 케미컬을 공급하는 단계와; 공급되는 케미컬을 이용하여 기판을 클리닝 하는 단계로 이루어진다.Referring to the accompanying drawings, the step of temporarily storing the chemical in the container of the chemical mechanical polishing equipment; Supplying the chemical at nitrogen pressure; The substrate is cleaned using the supplied chemical.
여기서, 본 발명은 질소압력으로 케미컬을 공급하는 단계는, 디지털 압력스위치를 이용하는 단계와; 유량조절기를 이용하여 유량을 조정하는 단계로 이루어져 있다.Here, the step of supplying the chemical at the nitrogen pressure, the step of using a digital pressure switch; It consists of adjusting the flow rate using the flow regulator.
따라서, 용기에 저장된 케미컬이 질소 압력에 의하여 공급될 때, 디지털 압력스위치를 이용하게 되어 수치적으로 압력을 측정 및 검출하게 되어 정확한 압력을 알 수 있고, 나아가 필요시에 유량조절기를 이용하여 수동으로 압력을 용이하게 조정할 수 있게 된다.Therefore, when the chemical stored in the container is supplied by nitrogen pressure, the digital pressure switch is used to measure and detect the pressure numerically so that the accurate pressure can be known, and further, if necessary, manually by using a flow controller. The pressure can be easily adjusted.
따라서, 상기 질소의 압력을 수치적으로 정확한 값을 확인할 수 있게 되어 정확한 유량을 확인하여 기준설정이 용이하면서, 유량조절이 용이하므로 장비의 가동율이 높아지고, 이에 따라 공정사고를 미연에 방지하게 된다. Therefore, it is possible to confirm the exact value of the pressure of the nitrogen numerically to confirm the correct flow rate, easy to set the reference, and easy to adjust the flow rate, the operation rate of the equipment is high, thereby preventing process accidents in advance.
본 발명은, 화학기계연마장비로부터 케미컬을 공급하기 위한 질소압력을 디지털 압력스위치와 유량조절기를 이용함으로써, 질소의 압력과 유량을 수치적으로 정확하게 확인 가능하여 질소의 압력 기준설정이 가능하고, 아울러 유량의 미세조절이 용이한 효과 있다.In the present invention, by using a digital pressure switch and a flow regulator for nitrogen pressure for supplying chemicals from chemical mechanical polishing equipment, it is possible to accurately check the pressure and flow rate of nitrogen numerically, and to set the nitrogen pressure reference. Fine control of the flow rate is easy to effect.
또한, 질소의 압력 기순설정과 유량의 미세 조절이 가능하게 되면, 장비의 가동율이 높아지고, 아울러 공정사고를 미연에 방지하는 효과를 기대할 수 있다. In addition, when the nitrogen gas pressure order setting and the flow rate can be finely adjusted, the operation rate of the equipment is increased, and the effect of preventing the process accident can be expected.
도 1은 일반적인 케미컬 공급압력의 조절방법을 도시한 순서도1 is a flow chart illustrating a method of adjusting a general chemical supply pressure.
도 2는 본 발명의 케미컬 공급압력의 조절방법을 도시한 순서도 2 is a flow chart showing a method of adjusting the chemical supply pressure of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030100649A KR20050068835A (en) | 2003-12-30 | 2003-12-30 | Regulation method of chemical supply pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030100649A KR20050068835A (en) | 2003-12-30 | 2003-12-30 | Regulation method of chemical supply pressure |
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| KR20050068835A true KR20050068835A (en) | 2005-07-05 |
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| KR1020030100649A KR20050068835A (en) | 2003-12-30 | 2003-12-30 | Regulation method of chemical supply pressure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200059444A (en) | 2018-11-21 | 2020-05-29 | (주)지엠에스티코리아 | A System for Regulating a Chemical Supplying Pressure and a Method for Regulating the Same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990015767A (en) * | 1997-08-09 | 1999-03-05 | 윤종용 | Pressure display device for semiconductor low pressure chemical vapor deposition equipment |
| KR19990044936A (en) * | 1997-11-03 | 1999-06-25 | 비센트 비.인그라시아 | Chemical mechanical planarization system and method |
| KR20000046823A (en) * | 1998-12-31 | 2000-07-25 | 김영환 | Apparatus for supplying slurry of semiconductor device |
| KR20000059169A (en) * | 2000-07-19 | 2000-10-05 | 박경호 | System for suplying slurry in the CPM process of semiconductor manufacturing |
-
2003
- 2003-12-30 KR KR1020030100649A patent/KR20050068835A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990015767A (en) * | 1997-08-09 | 1999-03-05 | 윤종용 | Pressure display device for semiconductor low pressure chemical vapor deposition equipment |
| KR19990044936A (en) * | 1997-11-03 | 1999-06-25 | 비센트 비.인그라시아 | Chemical mechanical planarization system and method |
| KR20000046823A (en) * | 1998-12-31 | 2000-07-25 | 김영환 | Apparatus for supplying slurry of semiconductor device |
| KR20000059169A (en) * | 2000-07-19 | 2000-10-05 | 박경호 | System for suplying slurry in the CPM process of semiconductor manufacturing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200059444A (en) | 2018-11-21 | 2020-05-29 | (주)지엠에스티코리아 | A System for Regulating a Chemical Supplying Pressure and a Method for Regulating the Same |
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