KR20010011716A - Device having filter for eliminating power line noise - Google Patents
Device having filter for eliminating power line noise Download PDFInfo
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- KR20010011716A KR20010011716A KR1019990031230A KR19990031230A KR20010011716A KR 20010011716 A KR20010011716 A KR 20010011716A KR 1019990031230 A KR1019990031230 A KR 1019990031230A KR 19990031230 A KR19990031230 A KR 19990031230A KR 20010011716 A KR20010011716 A KR 20010011716A
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
Description
본 발명은 반도체 소자 제조 분야에 관한 것으로, 특히 전원 잡음이 회로 내로 유입되는 것을 방지할 수 있는 저항-캐패시터 필터를 이용한 전원 잡음 제거 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductor device manufacturing, and more particularly, to a power supply noise canceling apparatus using a resistor-capacitor filter capable of preventing power supply noise from entering a circuit.
반도체 소자의 안정적인 동작을 위하여 안정적인 전원공급이 절대적으로 필요하다. 그러나, 소자의 고집적화, 저전압 , 고속동작화에 따라 전원전압의 안정적인 공급에 어려움이 있어 전원공급용 금속배선 배치가 복잡해지고, 파워 핀(power pin)의 개수가 증가되는 등의 문제가 있다.Stable power supply is absolutely necessary for stable operation of semiconductor devices. However, due to the high integration, low voltage, and high speed operation of the device, there is a difficulty in stably supplying the power supply voltage, resulting in a complicated arrangement of power supply metal wiring, and an increase in the number of power pins.
DRAM 소자를 예로서 설명하면, DRAM 내부의 전체회로에 전원을 공급하여 회로가 동작하도록 하는 파워 핀을 형성한다. 회로 내부에 파워-업(power-up) 회로라고 하는 외부전압 감지회로를 삽입하여 외부에서 일정한 전압이 일정한 시간동안 유지된 후에야 비로소 내부 회로가 정상동작을 하도록 설계한다. 최근의 고속 DRAM이나 멀티-비트(multi-bit) DRAM에서는 데이터 출력시에 큰전류가 소모되므로 이에 기인한 칩 동작의 불안정화를 방지하고자 DQ 핀용 전원 Vcc/Vss 핀을 별도로 설정하는 추세이다. 따라서, 다량의 Vcc/Vss 핀을 가지고 있는 고속 인터페이스(interface)의 경우에는 더욱 많은 파워 핀이 요구됨에 따라 핀의 배치가 용이하지 않고, 특히 공급전원(Vcc)과 접지전원(Vss) 사이의 잡음(noise)이 회로 내부로 유입되는 경우에는 소자 동작에 오류가 일어나는 등의 문제가 있다.Referring to the DRAM element as an example, a power pin is formed to supply power to the entire circuit inside the DRAM to operate the circuit. An external voltage sensing circuit called a power-up circuit is inserted into the circuit to design the internal circuit to operate normally only after a constant voltage is maintained for a certain time. In recent high-speed DRAM or multi-bit DRAM, a large current is consumed when outputting data. Therefore, in order to prevent destabilization of chip operation due to this, the power supply Vcc / Vss pin for the DQ pin is separately set. Therefore, in the case of a high speed interface having a large amount of Vcc / Vss pins, as more power pins are required, pin placement is not easy, and in particular, noise between the supply power supply (Vcc) and the ground power supply (Vss) If noise is introduced into the circuit, there is a problem such as an error in device operation.
상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은 공급전원(Vcc)과 접지전원(Vss) 사이의 잡음이 회로 내부로 유입되는 것을 방지할 수 있는 저항 캐패시터 필터(RC-filter)를 이용한 전원 잡음 제거 장치를 제공하는데 그 목적이 있다.The present invention devised to solve the above problems is a power supply noise using a resistance capacitor filter (RC-filter) that can prevent the noise between the supply power supply (Vcc) and the ground power supply (Vss) to be introduced into the circuit The purpose is to provide a removal device.
도1은 본 발명의 일실시예에 따른 RC 필터를 이용한 전원 잡음 제거 장치의 등가회로도,1 is an equivalent circuit diagram of a power supply noise canceling apparatus using an RC filter according to an embodiment of the present invention;
도2a는 본 발명의 일실시예에 따라 형성된 RC 필터를 이용한 전원 잡음 제거 장치의 평면도,2A is a plan view of a power supply noise canceling apparatus using an RC filter formed according to an embodiment of the present invention;
도2b는 도2a에서 패드연결 부분의 확대 단면도,Figure 2b is an enlarged cross-sectional view of the pad connecting portion in Figure 2a,
도3은 본 발명의 다른 실시예에 따른 RC 필터를 전원 잡음 제거 장치의 평면도.Figure 3 is a plan view of the power supply noise canceling device RC filter according to another embodiment of the present invention.
* 도면의 주요 부분에 대한 도면부호의 설명* Explanation of the reference numerals for the main parts of the drawings
Vcc: 공급전원 Vss: 접지전원Vcc: Supply Power Vss: Ground Power
C: 캐패시터 C1, C2, C3, C4: 전극C: capacitors C1, C2, C3, C4: electrodes
M1, M2, M3: 패드 W: 와이어M1, M2, M3: Pad W: Wire
10: 리드 프레임 20: 칩10: lead frame 20: chip
30: 기판30: substrate
상기와 같은 목적을 달성하기 위한 본 발명은 각각 제1 전도막으로 형성된 공급전원, 접지전원 및 다수의 제1 전도막 패드(pad); 제2 전도막으로 형성된 캐패시터의 제1 전극; 상기 캐패시터의 제1 전극을 이루는 제2 전도막으로 형성되고, 상기 제1 전도막 패드와 연결되어 상기 캐패시터의 제1 전극을 상기 공급전원과 연결시키는 제2 전도막 패드; 제3 전도막으로 형성되며 상기 캐패시터의 제1 전극과 대향하는 캐패시터의 제2 전극; 상기 캐패시터의 제2 전극을 이루는 제3 전도막으로 형성되고, 상기 제1 전도막 패드와 연결되어 상기 캐패시터의 제2 전극을 상기 접지전원과 연결시키는 제3 전도막 패드; 상기 캐패시터의 제1 전극과 상기 캐패시터의 제2 전극 사이에 형성된 유전막; 및 상기 캐패시터에 병렬로 연결되는 저항으로 이루어지는 저항-캐패시터 필터(RC filter)를 포함하는 반도체 소자를 제공한다.The present invention for achieving the above object is a supply power source, a ground power source and a plurality of first conductive film pads (pad) each formed of a first conductive film; A first electrode of a capacitor formed of a second conductive film; A second conductive film pad formed of a second conductive film forming a first electrode of the capacitor and connected to the first conductive film pad to connect the first electrode of the capacitor to the power supply; A second electrode of the capacitor formed of a third conductive film and facing the first electrode of the capacitor; A third conductive film pad formed of a third conductive film forming the second electrode of the capacitor and connected to the first conductive film pad to connect the second electrode of the capacitor to the ground power source; A dielectric film formed between the first electrode of the capacitor and the second electrode of the capacitor; And it provides a semiconductor device comprising a resistor-capacitor filter (RC filter) consisting of a resistor connected in parallel to the capacitor.
도1은 본 발명의 일실시예에 따른 RC 필터를 이용한 전원 잡음 제거 장치의 등가회로를 보이고 있다.1 shows an equivalent circuit of a power supply noise canceling apparatus using an RC filter according to an embodiment of the present invention.
본 발명에 따른 전원 잡음 제거 장치는, 공급전원(Vcc)에 연결된 제1 전극, 상기 제1 전극과 유전막을 사이에 두고 형성되며 접지전원(Vss)에 연결되는 제2 전극을 구비하는 캐패시터(C) 및 캐패시터에 병렬로 연결된 저항(R)으로 이루어진다.The power supply noise canceling device according to the present invention includes a capacitor C having a first electrode connected to a supply power supply Vcc, and a second electrode formed between the first electrode and a dielectric film and connected to a ground power supply Vss. ) And a resistor (R) connected in parallel to the capacitor.
이하, 본 발명의 일실시예에 따를 RC 필터를 이용한 전원 잡음 제거 장치 제조 방법을 설명한다.Hereinafter, a method of manufacturing a power supply noise canceling apparatus using an RC filter according to an embodiment of the present invention will be described.
소자분리막 및 트랜지스터 등 소정의 하부층 형성 공정이 완료된 반도체 기판 상에 공급전원(Vcc) 및 접지전원(Vss) 형성을 위한 제1 금속막을 형성하고, 제1 금속막을 선택적으로 식각하여 공급전원(Vcc) 및 접지전원(Vss)을 형성한다. 이때, 공급전원 및 접지전원 각각을 리드 프레임(lead frame) 또는 캐패시터의 제1 전극 및 제2 전극에 연결하기 위한 제1 패드(pad)를 형성한다.A first metal film for forming a supply power source (Vcc) and a ground power source (Vss) is formed on a semiconductor substrate on which a predetermined lower layer formation process such as an isolation layer and a transistor is completed, and the first metal film is selectively etched to supply the power supply (Vcc). And ground power supply Vss. In this case, a first pad is formed to connect the supply power source and the ground power source to the first electrode and the second electrode of the lead frame or the capacitor.
이어서, 공급전원 및 접지전원 형성이 완료된 전체 구조상에 제2 층간절연막을 형성하고 화학 기계적 연마(chemical mechanical polishing) 등을 실시하여 평탄화시킨 후, 캐패시터의 제1 전극 형성을 위한 제2 금속막을 형성하고, 제2 금속막을 선택적으로 식각하여 캐패시터의 제1 전극을 형성함과 동시에 캐패시터의 제1 전극을 공급전원(Vcc)과 연결시키기 위한 제2 패드를 형성한다.Subsequently, a second interlayer insulating film is formed on the entire structure of the supply power source and the ground power source to be completed and subjected to chemical mechanical polishing or the like to planarize, followed by forming a second metal film for forming the first electrode of the capacitor. The second metal film is selectively etched to form a first electrode of the capacitor, and a second pad for connecting the first electrode of the capacitor with the power supply Vcc is formed.
이어서, 캐패시터의 제1 전극 상에 유전막을 형성한다. 캐패시턴스(C)는 다음의 수학식1과 같은 관계에 있으므로, 원하는 캐패시턴스를 얻기 위하여 유전율(ε)을 고려하여 물질을 선택하거나, 유전막의 면적(A) 또는 유전막의 두께(t)를 변화시킨다.Subsequently, a dielectric film is formed on the first electrode of the capacitor. Since the capacitance C has the same relationship as in Equation 1 below, in order to obtain a desired capacitance, a material is selected in consideration of the dielectric constant?, Or the area A of the dielectric film or the thickness t of the dielectric film is changed.
다음으로, 유전막 사이에 캐패시터의 제2 전극 형성을 위한 제3 금속막을 형성하고, 제3 금속막을 선택적으로 식각하여 캐패시터의 제2 전극을 형성함과 동시에, 캐패시터의 제2 전극을 접지전원(Vss)과 연결시키기 위한 제3 패드를 형성한다.Next, a third metal film for forming the second electrode of the capacitor is formed between the dielectric layers, the third metal film is selectively etched to form the second electrode of the capacitor, and the second electrode of the capacitor is connected to the ground power supply (Vss). ) To form a third pad for connection.
이어서, 폴리실리콘막 또는 금속 등으로 저항을 형성하고, 캐패시터와 저항을 병렬로 연결시킨다. 저항 형성 및 캐패시터와 저항 연결에 관한 공정은 반도체 소자 제조 분야에서 통상의 지식을 가진 자에게 자명하므로, 그 상세한 설명은 생략한다.Subsequently, a resistor is formed of a polysilicon film or a metal, and the capacitor and the resistor are connected in parallel. Processes for forming resistors and connecting capacitors and resistors are apparent to those of ordinary skill in the semiconductor device manufacturing art, and thus detailed descriptions thereof will be omitted.
전술한 바와 같이 공급전원(Vcc), 접지전원(Vss), 캐패시터 및 저항 형성이 완료된 전체 구조상에 보호막을 형성하고, 제1 패드, 제2 패드 및 제3 패드 상에 형성된 보호막 및 층간절연막을 선택적으로 식각하여 각 패드를 노출시키고, 제1 패드와 리드 프레임, 제1 패드와 제2 패드, 제1 패드와 제3 패드를 와이어 본딩(wire bonding) 또는 BGA(ball grid array) 방법 등으로 연결하여 본 발명의 일실시예에 따라 RC 필터를 이용한 전원 잡음 제거 장치를 형성한다.As described above, a protective film is formed on the entire structure of the supply power supply Vcc, the ground power supply Vss, the capacitor, and the resistance formation, and the protective film and the interlayer insulating film formed on the first pad, the second pad, and the third pad are selectively selected. Each pad is exposed, and the first pad and the lead frame, the first pad and the second pad, and the first pad and the third pad are connected by a wire bonding method or a ball grid array method. According to an embodiment of the present invention, a power supply noise canceling apparatus using an RC filter is formed.
첨부된 도면 도2a는 각각 전술한 본 발명의 일실시예에 따라 형성된 RC 필터를 이용한 전원 잡음 제거 장치의 평면도이고, 도2b는 도2a에서 제1 패드(M1)와 제2 패드(M2), 제1 패드(M1)와 제3 패드(3) 연결 부분의 확대 단면도이다. 도2a에서 저항은 도면의 간략화를 위하여 생략되었고, 도1a 및 도1b에서 도면부호 '10'은 리드 프레임, '20'은 칩(chip), '30'은 기판, 'C1'은 캐패시터의 제1 전극, 'C2'는 캐패시터의 제2전극, 'M1', 'M2' 및 'M3'는 각각 제1 패드, 제2 패드, 제3 패드를 나타내며, W는 각 패드간, 또는 패드와 리드 프레임을 연결하는 와이어를 나타낸다.2A is a plan view of a power supply noise canceling apparatus using an RC filter formed according to an embodiment of the present invention described above, and FIG. 2B illustrates a first pad M1 and a second pad M2 in FIG. It is an expanded sectional view of the connection part of the 1st pad M1 and the 3rd pad 3. In FIG. 2A, the resistance is omitted for simplicity of the drawings. In FIGS. 1A and 1B, reference numeral '10' denotes a lead frame, '20' represents a chip, '30' represents a substrate, and 'C 1 ' represents a capacitor The first electrode, 'C 2 ' represents the second electrode of the capacitor, 'M1', 'M2' and 'M3' respectively represent the first pad, the second pad, the third pad, W is between each pad, or pad And a wire connecting the lead frame.
도3은 본 발명의 다른 실시예에 따른 RC 필터를 이용한 전원 잡음 제거 장치의 평면도이다. 도3에서 저항은 도면의 간략화를 위하여 생략되었으며, 도면부호 '10'은 리드 프레임, '20'은 칩, '30'은 기판, 'C1'은 제1 캐패시터의 제1 전극, 'C2'는 제1 캐패시터의 제2 전극, 'C3'은 제2 캐패시터의 제1 전극, 'C4'는 제2 캐패시터의 제2 전극, 'M1', 'M2' 및 'M3'는 각각 제1 패드, 제2 패드, 제3 패드를 나타내며, W는 각 패드간, 또는 패드와 리드 프레임을 연결하는 와이어를 나타낸다. 도3에 도시한 본 발명의 다른 실시예에 따른 RC 필터를 이용한 전원 잡음 제거 장치는, 전원 잡음을 제거하기 위하여 전술한 본 발명의 일실시예처럼 제1 전극(C1)및 제2 전극(C2)으로 이루어지는 제1 캐패시터로써 제1 필터를 형성하고, 칩 내에 대용량의 캐패시터가 필요한 경우 또는 잡음 발생이 큰 회로의 잡음을 제거하기 위한 경우 제3 전극(C3) 및 제4 전극(C4)으로 이루어지는 제1 캐패시터를 형성하는 경우를 보이고 있다.3 is a plan view of a power supply noise removing apparatus using an RC filter according to another embodiment of the present invention. In FIG. 3, the resistors are omitted for the sake of simplicity, reference numeral 10 denotes a lead frame, numeral 20 denotes a chip, numeral 30 denotes a substrate, numeral 1 denotes a first capacitor of the first capacitor, and reference numeral C 2. 'Is the second electrode of the first capacitor,' C 3 'is the first electrode of the second capacitor,' C 4 'is the second electrode of the second capacitor,' M1 ',' M2 'and' M3 'are respectively 1 pad, 2nd pad, and 3rd pad are shown, W represents the wire which connects between each pad or pad and a lead frame. In the power supply noise canceling apparatus using the RC filter according to another embodiment of the present invention shown in FIG. 3, the first electrode C 1 and the second electrode ( When the first filter is formed as a first capacitor composed of C 2 ), and a large capacity capacitor is required in the chip, or to remove noise of a circuit having a large noise generation, the third electrode C 3 and the fourth electrode C The case where the 1st capacitor which consists of 4 ) is formed is shown.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.
상기와 같이 이루어지는 본 발명은 고집적 반도체 소자의 면적 증가 없이 용이하게 형성할 수 있는 대용량의 캐패시터로써 전원 잡음 제거를 위한 RC 필터를 구현할 수 있어서, 전원전압의 안정화에 기여할 수 있다.The present invention made as described above can implement an RC filter for removing power supply noise as a large capacity capacitor that can be easily formed without increasing the area of the highly integrated semiconductor device, thereby contributing to stabilization of the power supply voltage.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100487502B1 (en) * | 1997-11-18 | 2005-07-07 | 삼성전자주식회사 | Microcomputer using triple wire bonding for noise prohibition |
| US8208338B2 (en) | 2006-05-12 | 2012-06-26 | Samsung Electronics Co., Ltd. | Semiconductor device |
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| KR20000047205A (en) * | 1998-12-31 | 2000-07-25 | 강병호 | Band-pass filter for intermediate frequency of communications satellite |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100487502B1 (en) * | 1997-11-18 | 2005-07-07 | 삼성전자주식회사 | Microcomputer using triple wire bonding for noise prohibition |
| US8208338B2 (en) | 2006-05-12 | 2012-06-26 | Samsung Electronics Co., Ltd. | Semiconductor device |
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