KR101532756B1 - Thermosetting temporary-bonding-film for semiconductor wafer, laminated body comprising the same and method for debonding laminated body - Google Patents

Abstract

The present invention relates to a temporary adhesive film for a thermosetting semiconductor wafer, a laminate comprising the temporary adhesive film, and a method of separating the laminate from the temporary adhesive film. More particularly, the temporary adhesive film for a thermosetting semiconductor wafer has an excellent filling capability with respect to a bump formed on a semiconductor wafer, and is not separated from the semiconductor wafer during thinning of the semiconductor wafer and a process for processing a rear surface. Also, after the processes are completed, the temporary adhesive film is easily separated from the semiconductor wafer, and has an excellent compatibility with equipment used in the processes, whereby the process handling can be easily performed.

Description

TECHNICAL FIELD [0001] The present invention relates to a temporary adhesive film for a thermosetting semiconductor wafer, a laminated body including the same, and a method for separating the laminated body from the laminated body.

The present invention relates to a temporary adhesive film for a thermosetting semiconductor wafer, a laminate including the same, and a method for separating the laminate. More specifically, the present invention relates to a temporary adhesive film for a thermosetting semiconductor wafer, A temporary adhesive film for a thermosetting semiconductor wafer which is not separated during the processing step but is easily separated from the semiconductor wafer after the completion of the process and has excellent compatibility with the equipment used in the process, And a method for separating the lamination agent.

But are not limited to, integrated circuits, power semiconductors, light emitting diodes, photonic circuits, microelectromechanical systems (MEMS), embedded passive arrays, packaging interposers, Hosts of other silicon- and compound semiconductor-based microdevices are collectively created into arrays on wafer substrates ranging in diameter from 1 to 12 inches. These devices can then be used in a macroscopic environment (e.g., by interconnection with a printed wiring board (PWB) or a flexible printed circuit board disclosed in Korean Patent No. 1030497) ) And individual devices or dies packaged to allow practical interfacing. The manner in which a die builds a device package on or around a die as part of a wafer array has become increasingly popular. This implementation, also referred to as wafer-level packaging, reduces overall packaging costs and typically achieves higher interconnect densities than conventional packages with external dimensions that are several times larger than actual devices There is an advantage.

Until recently, interconnection schemes have generally been limited to two dimensions, which means that both the device and the electrical connections between the corresponding board or packaging surface on which the device is mounted are arranged in a horizontal or xy plane. The current microelectronics industry is increasing the device interconnect density and correspondingly reducing the signal delay (which is the result of shortening the distance between the electrical connection points) by stacking and interconnecting devices vertically, i. It is recognized that it can be achieved, and research and development is continuing in this direction.

Two common requirements required for such device stacking include thinning the device from the face to the through-wafer direction and typically forming a through-silicon-via ("TSV") on the backside of the device. Wafer-to-wafer electrical connections referred to as " wafer-to-wafer " On the other hand, such semiconductor device thinning has become a standard implementation even when devices are not packaged in a stacked configuration, because they facilitate heat dissipation and are useful for smaller electronic products such as a much smaller mobile phone.

Thereby reducing the profiles of the semiconductor devices when the semiconductor devices or the corresponding packages to which they belong and simplifying the formation of back electrical connections on the devices, Interest in things is increasing.

However, device wafers thinned to 100 탆 or less, particularly thinner than 60 탆, are extremely fragile and development of a method for preventing cracking and breakage is required. In addition, although various wafer wands and chucks have been developed for transporting ultra-thin device wafers, a variety of wafer wand and chucks have been developed, including but not limited to back-and-forth devices including chemical mechanical polishing (CMP), lithography, etching, deposition, annealing, There is still a problem with how to support the wafers during grinding and TSV-forming processes. This is because the various steps during or after thinning impose high thermal and mechanical stresses on the device wafer.

In order to solve these problems, there have been a lot of researches and methods for carrying out a thinning process and a backing process after a device wafer before the thinning process is faced down and adhered to a carrier wafer with a polymeric adhesive, This is because the carrier wafer protects the device wafer from the stresses generated during the step of thinning and / or thinning and facilitates the transfer. The carrier wafer is removed from the thinned device wafer upon completion of thermal, thermomechanical or chemical processes.

On the other hand, conventionally, when a carrier wafer is adhered to a device wafer, the adhesive composition is applied to a device wafer or a carrier wafer, and the remainder is laminated, followed by curing such as heat or ultraviolet rays. It is difficult to satisfy such a premise every time when the application is performed. If the premise is not satisfied, a clearance is generated between the device wafer and the carrier wafer, The back surface processing step can not be performed, and the thinned device wafer is broken.

Further, since the adhesive composition must be applied each time in the step of bonding the device wafer and the carrier wafer, and the two substrates must be bonded after the primary curing, the process becomes complicated and the process time is prolonged.

Further, in order to solve the above-described problems, there may be a problem that the film and the bump on the device wafer are less likely to be filled and adhered than the adhesive composition during production of the temporary adhesive film, And adhesive force generate voids between the film and the device wafer, thereby causing frequent failures in vacuum and high temperature operations involved in thin film and back processing.

Further, since it is not easily compatible with thin film and back processing equipment of device wafers which are used in the production of film type, there is a very difficult problem in handling the process.

SUMMARY OF THE INVENTION The present invention has been conceived in order to solve the above-mentioned problems. The first problem to be solved by the present invention is to provide an adhesive for temporarily bonding a device wafer to a carrier wafer, It is possible to prevent clearance or peeling between the device wafer and the carrier wafer which may occur during the thinning and the rear process, simplify the bonding process between the two substrates and shorten the time required for the bonding process, It is an object of the present invention to provide a temporary adhesive film for a thermosetting semiconductor wafer which can be easily detached without affecting the device wafer when the carrier wafer needs to be removed.

A second problem to be solved by the present invention is to provide a laminated film including a temporary adhesive film for a thermosetting semiconductor wafer according to the present invention which can smoothly perform thinning of a device wafer and a back surface process and does not deteriorate the reliability of a thin device wafer And a method for separating the sieve and the laminate.

In order to solve the above first problem, the present invention provides a semiconductor device comprising: a core layer; A first adhesive layer for adhering a carrier wafer formed on one surface of the core layer; And a second adhesive layer for adhering a device wafer formed on the other surface of the core layer, wherein the temporary adhesive film satisfies the following relational expression (1).

[Relation 1]

According to a preferred embodiment of the present invention, the total thickness of the temporary adhesive film may be 65 to 150 mu m.

According to another preferred embodiment of the present invention, the temporary adhesive film may satisfy the following relational expression (2).

[Relation 2]

According to another preferred embodiment of the present invention, the temporary adhesive film may satisfy the following relational expression (3).

[Relation 3]

According to another preferred embodiment of the present invention, the thickness of the second adhesive layer included in the temporary adhesive film may be 48 to 70 탆.

According to another preferred embodiment of the present invention, the thickness of the first adhesive layer is 5 to 10 탆, and the thickness of the core layer is 10 to 90 탆.

According to another preferred embodiment of the present invention, the thickness of the core layer may be 20 to 90 탆.

According to another preferred embodiment of the present invention, the temporary adhesive film may satisfy the following relational expression (4).

[Relation 4]

According to another preferred embodiment of the present invention, the first adhesive layer and the core layer may satisfy the following conditions (1) and (2).

(1) the adhesive strength measured by the following Measuring Method 1 is 50 to 200 gf / 25 mm, and (2) the adhesive strength measured by the following Measuring Method 2 is 100 to 300 gf / 25 mm.

* Adhesive strength measurement method 1

A temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237, and the first adhesive layer side of the specimen was attached to a SUS 304 with a 2 kg roller, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour, and then measure the 180 ° adhesive strength at a peeling rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 2

A temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237, and the first adhesive layer side of the specimen was attached to a SUS 304 with a 2 kg roller, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour and then heat-treated at 200 ° C for 60 minutes. Then, the adhesive strength at 180 ° is measured at a peeling speed of 300 mm / min using a tensile tester.

According to another preferred embodiment of the present invention, the second adhesive layer and the core layer can satisfy the following conditions (3) and (4).

(3) the adhesive strength measured by the following Measuring Method 3 is 2 to 10 gf / 25 mm, and (4) the adhesive strength measured by the following Measuring Method 4 is 5 to 25 gf / 25 mm.

* Adhesive strength measurement method 3

The temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length, and the second adhesive layer side of the specimen was attached to SUS 304 using a roller of 2 kg in accordance with JIS Z 0237, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour, and then measure the 180 ° adhesive strength at a peeling rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 4

The temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length, and the second adhesive layer side of the specimen was attached to SUS 304 using a roller of 2 kg in accordance with JIS Z 0237, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour and then heat-treated at 200 ° C for 60 minutes. Then, the adhesive strength at 180 ° is measured at a peeling speed of 300 mm / min using a tensile tester.

 According to another preferred embodiment of the present invention, the first adhesive layer and the second adhesive layer may include a silicone-based adhesive binder.

According to another preferred embodiment of the present invention, the core layer is made of polyetheretherketone (PEEK), polyethyleneimine (PEI), polyimide (PI) and polyethersulfone (PES) May be used.

In order to solve the second problem, the present invention provides a temporary adhesive film according to the present invention; A carrier wafer formed on the first adhesive layer of the temporary adhesive film; And a device wafer formed on the second adhesive layer of the temporary adhesive film, the device wafer comprising a temporary adhesive film.

According to a preferred embodiment of the present invention, a protective layer may further be provided between the device wafer and the temporary adhesive film.

According to another preferred embodiment of the present invention, the protective layer may include a curable silicone resin.

According to another preferred embodiment of the present invention, the adhesive force between the first adhesive layer and the carrier wafer can satisfy the following conditions (5) and (6).

(5) The adhesive strength measured by the following measuring method 5 is 50 to 200 gf / 25 mm, and (6) the adhesive strength measured by the following measuring method 6 is 100 to 300 gf / 25 mm.

* Adhesive strength measurement method 5

A sample adhered to the surface of the first adhesive layer of the specimen was attached to a silicon wafer which had not been subjected to any surface treatment with a roller of 2 kg in accordance with JIS Z 0237, and the adhered adhesive film was cut at a size of 2.5 cm x 10 cm And 55% relative humidity for 1 hour, then measure the 180 ° adhesive strength at a peel rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 6

A sample adhered to the surface of the first adhesive layer of the specimen was attached to a silicon wafer which had not been subjected to any surface treatment with a roller of 2 kg in accordance with JIS Z 0237, and the adhered adhesive film was cut at a size of 2.5 cm x 10 cm And 55% relative humidity for 1 hour and then heat treatment at 200 ° C for 60 minutes. Then, the adhesive strength at 180 ° is measured at a peeling speed of 300 mm / mim using a tensile tester.

According to another preferred embodiment of the present invention, the adhesive force between the second adhesive layer and the device wafer can satisfy the following conditions (7) and (8).

(7) The adhesive strength measured by the following measuring method 7 is 2 to 10 gf / 25 mm, and (8) the adhesive strength measured by the following measuring method 8 is 5 to 25 gf / 25 mm.

* Adhesive strength measurement method 7

A test piece cut into a size of 2.5 cm x 10 cm in length and width was adhered to a second adhesive layer side of a specimen according to JIS Z 0237 with a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) The specimens were attached to a spin-coated silicon wafer with a thickness of 2 kg using a roller and stored for 1 hour at a temperature of 25 ° C and relative humidity of 55%. The adhesive strength at 180 ° was measured at a peeling rate of 300 mm / min using a tensile tester do.

* Adhesive strength measurement method 8

A test piece cut into a size of 2.5 cm x 10 cm in length and width was adhered to a second adhesive layer side of a specimen according to JIS Z 0237 with a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) Coated with a 2 kg roller and stored at 25 ° C and 55% relative humidity for 1 hour and then heat-treated at 200 ° C for 60 minutes. After the heat treatment was finished, a 300 mm / min The bonding strength at 180 ° is measured at the peeling speed.

According to a second aspect of the present invention, there is provided a method for manufacturing a temporary adhesive film, comprising the steps of: adhering a carrier wafer on a first adhesive layer included in a temporary adhesive film according to the present invention, Adhering the device wafer facing each other to form a laminate; (2) cutting the temporary adhesive film and the device wafer interface at either end of the laminate; And (3) removing the carrier wafer and the temporary adhesive film from the laminated body by separating the carrier wafer and the temporary adhesive film at one end of the cut laminated body at a predetermined angle to form a laminate A method of separating sieves is provided.

According to a preferred embodiment of the present invention, the device wafer of step (1) includes a protective layer on one surface facing the second adhesive layer, and adhering the protective layer to the second adhesive layer, Can cut the interface between the temporary adhesive film and the protective layer.

According to another preferred embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (a) thinning the other surface of a device wafer which does not face the temporary adhesive film between steps (2) and (3) And (b) performing back-processing on the thin-film-processed surface.

Hereinafter, terms used in the present invention will be described.

The term " formed on a layer " or "layered" as used in the present invention includes all cases where the layer is formed directly facing the layer or indirectly formed after one or more other layers are inserted on the layer. Quot; B layer formed on the A layer ", the A layer and the B layer are directly facing each other or contacting each other, or the third and fourth C1 layers and C2 layers are formed on the A layer, Are formed.

The temporary adhesive film for a thermosetting semiconductor wafer of the present invention can be used to temporarily adhere a device wafer to a carrier wafer in order to make a device wafer thinner. As a result, compared to a conventional composition type adhesive, It is possible to prevent clearance and peeling between the wafer and the carrier wafer, simplify the bonding process between the two substrates, and shorten the time required for the bonding process, thereby contributing to improvement in productivity. In addition, when the carrier wafer needs to be removed, it is possible to easily attach and detach without affecting the device wafer, thereby making it possible to prevent the reliability of the thin device wafer from deteriorating. Further, the laminate including the temporary adhesive film of the present invention is more suitable for thinning of the device wafer, so that the thinning and the rear process can proceed smoothly, and the separation of the desired device wafer in the laminate after the end of the process is facilitated can do. Further, the laminate including the temporary adhesive film of the present invention is excellent in compatibility with the conventional equipment used for the device wafer thinning and rear processing, and is easy to handle in the process progress.

1 is a cross-sectional schematic diagram of a temporary adhesive film according to a preferred embodiment of the present invention.
2 is a schematic cross-sectional view of a laminate according to a preferred embodiment of the present invention.
3 is a schematic cross-sectional view of a laminate according to a preferred embodiment of the present invention.
4 is a schematic diagram illustrating a separation process according to a preferred embodiment of the present invention.
5 is a schematic diagram illustrating a separation process according to a preferred embodiment of the present invention.
6 is a schematic diagram illustrating a separation process according to a preferred embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

As described above, conventionally, a method has been used in which an adhesive composition is applied to a device wafer or a carrier wafer, and the other is joined and the two wafers are bonded together by curing such as heat or ultraviolet rays. It is difficult to uniformly apply the coating uniformly over the entire process. In this case, a clearance is generated between the device wafer and the carrier wafer, and the thin film process and the back processing process of the device wafer are performed There is a problem that the device wafer can not be performed and / or the thinned device wafer is broken. Further, since the adhesive composition is applied each time in the step of bonding the device wafer and the carrier wafer and the two substrates are bonded after the primary curing, the process becomes complicated and the process time is prolonged. Further, in order to solve the above-mentioned problems, there has been a problem that the filling property and adhesion between the film and the bump on the surface of the device wafer are significantly lowered compared to the adhesive composition when the film is formed into a temporary adhesive film type, The adhesiveness and adhesion force cause voids between the film and the device wafer, causing frequent defects in the vacuum and high temperature operations involved in thin film and back processing. Furthermore, since it is incompatible with thin film and back-surface processing equipment of device wafers used in film type manufacturing, there is a very difficult problem in handling the process.

Accordingly, in the present invention, A first adhesive layer for adhering a carrier wafer formed on one surface of the core layer; And a second adhesive layer for adhering a device wafer formed on the other surface of the core layer, wherein the provisional adhesive film for a semiconductor wafer satisfying the following relational expression 1 is solved.

[Relation 1]

This makes it possible to prevent gap and peeling between the device wafer and the carrier wafer which may occur during the thinning of the device wafer and during the back surface process, as compared with the conventional composition type adhesive, and to simplify the bonding process between the two substrates and shorten the time required for the bonding process It is possible to contribute to the improvement of the productivity. When the carrier wafer is required to be removed, the device wafer can be easily removed without affecting the device wafer. Thus, the reliability of the thin device wafer can be prevented from lowering, It is excellent in compatibility with the conventional equipment used for processing, and the process can be more easily performed.

1 is a cross-sectional view of a temporary adhesive film for a thermosetting semiconductor wafer according to a preferred embodiment of the present invention. The temporary adhesive film 10 according to the present invention comprises a core layer 12, a carrier wafer formed on one side of the core layer And a second adhesive layer 13 for adhering a device wafer formed on the other surface of the core layer. Further, the layer and the layer may be directly in contact with each other, and one or more layers may be interposed to face each other indirectly.

Before examining each layer included in the temporary adhesive film for a thermosetting semiconductor wafer according to the present invention, the following relational expression 1, in which the temporary adhesive film according to the present invention must be satisfied, will be described first.

[Relation 1]

The temporary adhesive film according to the present invention protects the device wafer from thermal and mechanical stresses applied to the device wafer in the thinning process and / or the backside process of the device wafer and, in order to smoothly progress the process, As a film to be used for temporarily adhering a wafer to a device wafer, conventionally, a method of applying to a device wafer with an adhesive composition that is not a film type and temporarily adhering a carrier wafer has been used. However, the process of applying the adhesive composition to the device wafer and first curing it and then adhering the carrier wafer increases the manufacturing time and requires a complicated manufacturing process. The vaporization of the solvent contained in the adhesive composition, which occurs during the primary curing, There was a harmful problem to health. Therefore, the inventors of the present invention have found that the above-mentioned problems can be solved by forming the film in the form of a film rather than a composition.

However, in the case of the film type, there is a problem that the filling of the bump on the device wafer sufficiently and the adhesion between the temporary adhesive film and the device wafer are lower than that in the case of the composition form. In the conventional device wafer thinning process and / There is a compatibility problem with the equipment to be used, so that the temporary adhesive film according to the present invention must satisfy the above-mentioned relation (1).

The bump filling property and adhesive force between the device wafer and the temporary adhesive film are improved only when the above-mentioned relational expression 1 is satisfied, and the compatibility with the conventional equipment is excellent, so that the device wafer can be more suitable for thinning and / or rear surface processing of the device wafer. If the value of Equation 1 in the above-mentioned relational expression 1 exceeds 54, even though a certain amount of mechanical pressure is applied in the step of placing the temporary adhesive film on the device wafer and adhering the carrier wafer onto the temporary adhesive film, The adhesion between the device wafer and the temporary adhesive film is lowered, and voids may be generated between the device wafer and the temporary adhesive film. Such voids cause contraction / expansion under vacuum and high temperature conditions during thinning and / There may be a problem that it is broken or the reliability is lowered. In addition, there is a problem in that compatibility with equipment used for conventional thinning and / or backside processing is poor and equipment needs to be replaced or redesigned. If the value of Equation 1 is less than 23 in relation 1, the thickness becomes too thin, and the thickness of the three layers included in the limited thickness can not reach the desired level.

On the other hand, the provisional adhesive film according to the present invention which satisfies the above-mentioned relational expression 1 can satisfy the following relational expression 2 in order to exhibit the adhesion function and adhesion between the device wafer and the carrier wafer.

[Relation 2]

The first adhesive layer 11 and the second adhesive layer 12 are formed on the top and bottom surfaces of the core layer 12 included in the temporary adhesive film of the present invention. The core layer 12 is a support for the temporary adhesive film, It is possible to smoothly perform the lamination process when laminating the temporary adhesive film on the wafer and to prevent the stress generated when grinding the back surface of the device wafer of the laminated carrier laminated with the carrier wafer and the device wafer, And removes the temporary adhesive film from the carrier wafer after the carrier wafer and the device wafer are separated. Therefore, when the thickness of the core layer 12 becomes thinner than a certain thickness, the core layer 12 can not serve as a sufficient support in a high temperature and chemical environment in which the carrier wafer and the device wafer are attached, Wrinkles are generated and clearance is generated between the carrier wafer and the device wafer, so that the reliability of the device wafer is lowered and the thinning and / or the rear surface machining process can not be further advanced. In addition, when the thickness of the core layer 12 is increased to a certain thickness or more, the total thickness of the temporary adhesive film is increased, which is not preferable for thinning the film. If the thickness of the core layer 12 is increased while satisfying the above- The thickness of the remaining first adhesive layer and / or the second adhesive layer must be relatively reduced, so that the adhesive strength may be excessively increased or the adhesive strength may be excessively increased, and the increased thickness of the core layer may cause a decrease in packing property and adherence between the device wafer and the temporary adhesive film There is a problem that can be caused. Therefore, in order to eliminate such a problem, it is preferable to satisfy the above-mentioned relational expression (2). When the above formula (2) is satisfied, the thickness of the first adhesive layer and / or the second adhesive layer is ensured within the entire thickness of the temporary adhesive film, so that the core film exhibits a function as a temporary adhesive film and has a certain thickness. And the adhesion to the bumps of the device wafer can be further improved.

Further, the temporary adhesive film according to the present invention can further satisfy the following relational expression 3 as well as relational expressions 1 and 2.

[Relation 3]

By further satisfying the above-described relational expression (3), the temporary adhesive film according to the present invention can maintain the adhesion force with the carrier wafer at a desired level by ensuring that the thickness of the first adhesive layer is a certain percentage of the total thickness of the temporary adhesive film. If the relation 3 is less than 0.8, as the thickness of the first adhesive layer increases, the adhesion force between the carrier wafer and the temporary adhesive film increases to a desired level or more. When the carrier wafer is separated from the temporary adhesive film for recycling of the carrier wafer There is a problem that the carrier wafer is not separated or the carrier wafer is torn or broken. Further, in terms of equipment compatibility, adhesion with the device wafer, and thinning of the film, the thickness of the first adhesive layer increased in the temporary adhesive film of a limited thickness decreases the thickness of the core layer and / or the second adhesive layer, There may be a problem to make. If the relational expression (3) exceeds 2.1, the thickness of the first adhesive layer becomes too thin, and the adhesion force of the carrier wafer is remarkably reduced, so that the carrier wafer may peel off and separate during the thinning of the device wafer and / or the rear surface processing.

Further, the temporary adhesive film according to the present invention may satisfy the relational expressions 1 to 3, and the thickness of the second adhesive layer included in the temporary adhesive film may be 48 to 70 탆. The second adhesive layer is a layer facing the device wafer, and the thickness of the second adhesive layer must take into consideration both the adhesive force between the device wafer and the temporary adhesive film, the adhesive force, and the separability of the temporary adhesive film after the thinning / The filling property with the bumps existing on the device wafer is remarkably lowered, the adhesion and the adhesion force with the bumps existing on the device wafer are remarkably lowered, so that there is a gap between the device wafer and the temporary adhesive film, or the device wafer is separated There is a problem that the thinning and / or the backside machining process can not be performed, or the reliability of the device wafer after the process is completed may remarkably deteriorate. If the thickness of the second adhesive layer exceeds 70, adhesion force with the device wafer significantly increases After the thinning / backside machining is completed, the device wafer is temporarily bonded There is a problem that the reliability of the device wafer may deteriorate in a process in which separation is impossible or the temporary adhesive film tears and remains on the device wafer or exerts a stronger force for separation.

The temporary adhesive film according to the present invention can further satisfy the following relational expression 4 while satisfying the above-described relational expressions 1 to 3 and the thickness range condition of the second adhesive layer.

[Relation 4]

In the case of the temporary adhesive film satisfying the above-described relational expression 4, occurrence of various problems that may occur when the device wafer, the carrier wafer, the device wafer thin film / post-processing device wafer / carrier wafer are separated, It is possible to exhibit more excellent physical properties of the temporary adhesive film and at the same time contribute to the thinning of the film. If the range of Relation 4 is not satisfied, any one or more of the above-described relational expressions 1 to 3 and the problems caused by the thickness of the second adhesive layer may occur, and thinning of the film can not be achieved.

Each of the layers included in the temporary adhesive film according to the present invention satisfying the above-described relational expressions and conditions will be described below, but will be explained regardless of the formation order of the layers.

First, the first adhesive layer (11 in FIG. 1) will be described.

The first adhesive layer 11 functions to adhere the carrier wafer. The first adhesive layer 11 has a function of not separating the carrier wafer from the device wafer until the carrier wafer and the temporary adhesive film are separated from the device wafer after the thinning / Sufficient adhesion can be maintained. Preferably, the adhesive force between the first adhesive layer 11 and the core layer 12 can satisfy the following conditions (1) and (2).

(1) the adhesive strength measured by the following Measuring Method 1 is 50 to 200 gf / 25 mm, and (2) the adhesive strength measured by the following Measuring Method 2 is 100 to 300 gf / 25 mm.

First, the adhesive strength measured under the condition (1) was determined by attaching the first adhesive layer side of the specimen to the SUS 304 with a 2-kg roller in accordance with JIS Z 0237 in accordance with JIS Z 0237, And stored at 25 ° C and 55% relative humidity for 1 hour, and then measured at a bonding strength of 180 ° at a peeling speed of 300 mm / min using a tensile tester. The adhesive strength measured under the condition (2) was obtained by attaching the first adhesive layer side of the specimen to the SUS 304 with a 2-kg roller according to JIS Z 0237 in accordance with JIS Z 0237 in accordance with JIS Z 0237 in which the temporary adhesive film was cut to a size of 2.5 cm x 10 cm And after storing at 25 ° C and 55% relative humidity for 1 hour and then heat-treating at 200 ° C for 60 minutes, 180 ° adhesive strength was measured at a peeling speed of 300 mm / mim using a tensile tester.

The adhesive strength is an adhesive force between the first adhesive layer and SUS404, but it is possible to achieve a desired adhesive strength level required between the first adhesive layer and the carrier wafer layer when the adhesive force is satisfied. Therefore, if the adhesive strength is satisfied, the carrier adhesive may separate during the thin film / back surface processing of the device wafer, so that the device wafer may not be supported, the device wafer may be broken, and the problem of difficulty in transferring during the process may not occur . Further, since the carrier wafer and the temporary adhesive film in the bonded state after the device wafer separation are not discarded but the carrier wafer must be recycled again, the adhesion force should be a certain value or less so as to facilitate separation of the carrier wafer and the temporary adhesive film. Accordingly, it is most preferable that the bonding strength by the measuring method according to the condition (1) is 50 to 200 gf / 25 mm, and the bonding strength by the measuring method according to the condition (2) is maintained at 100 to 300 gf / 25 mm Do.

On the other hand, the first adhesive layer 11 may be formed through an adhesive composition containing an adhesive resin and a solvent, and may further include a crosslinking agent, a curing accelerator, and the like. The specific kind of the adhesive composition and the mixing ratio thereof can be changed without limitation as long as the adhesive strength described above can be expressed. However, the adhesive composition preferably contains 60 to 200 parts by weight of a solvent relative to 100 parts by weight of the adhesive resin, which may be advantageous for manifesting the adhesive strength. When a crosslinking agent is further included depending on the type of the adhesive resin, the crosslinking agent may be contained in an amount of 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive resin. In the case of the curing catalyst, .

Specifically, the adhesive resin may be a thermosetting adhesive resin, and may be used without limitation in chemical resistance and heat resistance so as to facilitate the thin film / backside processing of a device wafer, and capable of exhibiting a desired adhesive force have. As a non-limiting example, rubber, epoxy, acrylic, silicone resin, etc. may be used alone or in combination of two or more. As a non-limiting example of the rubber system, acrylonitrile butadiene rubber, butadiene rubber, butyl rubber, styrene butadiene rubber, nitrile rubber, etc. may be used alone or in combination of two or more. As the non-limiting examples of the epoxy resin, there may be mentioned glycidyl ether type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, linear aliphatic epoxy resin, alicyclic type epoxy resin cycloaliphatic epoxy resins, heterocyclic ring-containing epoxy resins, substituted epoxy resins, naphthalene-based epoxy resins, and derivatives thereof, which may be either bifunctional or multifunctional resins and may be used alone or in combination of two or more. And a known epoxy resin can be used. In addition, in the case of acrylic resin, it is also possible to use methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, n-butyl methacrylate, n-butyl methyl methacrylate, acrylic acid, methacrylic acid, itaconic acid, Acrylamide, methylol acrylamide, glycidyl methacrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, 2-ethylhexyl acrylate polymer or terpolymer, May be used alone or in combination of two or more.

The silicone resin may be a resin containing a silicon-bonded hydrogen atom, a hydroxy group or a hydrolyzable group, and may be a silicone resin known in the art and manufactured by a well-known technique. Such a silicone resin can typically be prepared by cohydrolysis of a suitable mixture of silane precursors in an organic solvent such as toluene. For example, the silicone resin may comprise a silane of the formula R ¹ R ² ₂ SiX and a silane of the formula R ² SiX ₃ Wherein R ¹ is a C ₁ to C ₁₀ hydrocarbyl or C ₁ to C ₁₀ halogen-substituted hydrocarbyl, R ² is R ¹ , -H or a hydrolyzable group, and X is a hydrolyzable group The hydrolysable group can be prepared by reacting the silicon-bonded groups in water at any temperature from room temperature (-23 占 폚) to 100 占 폚, for example, within 30 minutes (Si-OH) group in the presence or absence of a catalyst in the presence of a catalyst. Examples of hydrolysable groups represented by R ² include -Cl, -Br, -OR ₃ , -OCH _{2 CH 2 OR 3, CH 3} C (= O) O-, Et (Me) C = NO-, CH 3 C (= O) N (CH 3 ) - and -ONH ₂ , wherein R ³ is a C ₁ to C ₈ hydrocarbyl or a C ₁ to C ₈ halogen-substituted hydrocarbyl.

However, among the adhesive resins listed above, the heat resistance of the rubber-based resin may deteriorate and may not be suitable for thin film / backside processing of device wafers under high temperature conditions. In the case of epoxy resins, modulus after curing remarkably lowers, / Is not suitable for the backside machining process, and there is a problem that the bump filling property and the adhesion force can be reduced between the device wafer and the temporary adhesive film. In addition, in the case of an acrylic resin, since the heat resistance is poor, a silicone resin is preferably used so as to exhibit a desired adhesive force, and may be more preferable in terms of heat resistance and chemical resistance.

In addition, the solvent can be used without limitation in the case of a solvent which normally has no problem in dissolving the adhesive resin as described above, and as a non-limiting example, a saturated aliphatic hydrocarbon such as n-pentane, Cyclic aliphatic hydrocarbons such as cyclopentane and cyclohexane; aromatic hydrocarbons such as benzene, toluene, xylene and mesitylene; cyclic ethers such as tetrahydrofuran (THF) and di Hexane and the like), ketones such as methyl isobutyl ketone (MIBK), methyl ethyl ketone (MEK), halogenated alkanes such as trichloroethane and halogenated aromatic hydrocarbons such as bromobenzene and chlorobenzene, But is not limited thereto. The organic solvent may be a single organic solvent or a mixture of two or more different organic solvents, each as defined above.

In addition, the specific kind of the crosslinking agent may vary depending on the specific kind of the above-mentioned adhesive resin, thus to as a non-limiting _{example, MeSi (OCH 3) 3,} CH 3 Si (OCH 2 CH 3) 3, CH 3 Si _{(OCH 2 CH 2 CH 3)} 3, CH 3 Si [O (CH 2) 3 CH 3] 3, CH 3 CH 2 Si (OCH 2 CH 3) 3, C 6 H 5 Si (OCH 3) 3, C _{6 H 5 CH 2 Si (OCH} 3) 3, C 6 H 5 Si (OCH 2 CH 3) 3, CH 2 = CHSi (OCH 3) 3, CH 2 = CHCH 2 Si (OCH 3) 3, CF 3 CH _{2 CH 2 Si (OCH 3)} 3, CH 3 Si (OCH 2 CH 2 OCH 3) 3, CF 3 CH 2 CH 2 Si (OCH 2 CH 2 OCH 3) 3, CH 2 = CHSi (OCH 2 CH 2 OCH _{3) 3, CH 2 = CHCH} 2 Si (OCH 2 CH 2 OCH 3) 3, C 6 H 5 Si (OCH 2 CH 2 OCH 3) 3, Si (OCH 3) 4, Si (OC 2 H 5) 4 And alkoxysilanes such as Si (OC ₃ H ₇ ) ₄ ; _{CH 3 Si (OCOCH 3) 3} , CH 3 CH 2 Si (OCOCH 3) 3 and CH ₂ = CHSi (OCOCH ₃₎ Ogaki quinoa three silane, such as _{3;, CH 3 Si [ON} = C (CH 3) CH _{2 CH 3] 3, Si [} oN = C (CH 3) CH 2 CH 3] 4 and _{CH 2 = CHSi [oN = C} (CH 3) CH 2 CH 3] 3 and so on of the organosilane noi mino oxy silane;, CH _{3 Si [NHC (= O)} CH 3] 3 , and _{C 6 H 5 Si [NHC (} = O) CH 3] silane FIG amino organosilane quinoa set, such as _{3;, CH 3 Si [NH} (SC 4 H 9] 3 and _{CH 3 Si (NHC 6 H 11} ) an aminosilane such as _3; including and organo-amino-oxy-silane, but is not this limit the cross-linking agent is a mixture of two or more different silane, such as a single silane or described, respectively above .

In the case of the curing catalyst, a catalyst used for conventional thermal curing may be used without limitation, and the specific kind may be changed depending on the type of the adhesive resin used. As a non-limiting example, it may include a platinum group metal selected from platinum, rhodium, ruthenium, palladium, osmium or iridium metal, or an organometallic compound thereof or a combination thereof, which may be used alone or in combination of two or more .

The method of forming the first adhesive layer 11 through the above-mentioned adhesive composition may be a method of forming a film on a conventional support member. As a non-limiting example, a comma coating, a reverse coating, Coating, gravure coating, braiding coating, silk screen coating and slot die head coating. More specifically, the adhesive composition may be coated on one side of the core layer, which will be described later, by any one of the above-mentioned methods, and dried at a temperature of 120 to 170 ° C and 200 to 230 ° C for 3 to 6 minutes, respectively. However, the present invention is not limited to such a production method. If the thickness of the first adhesive layer 11 is less than 5 mu m, the adhesive force between the first adhesive layer 11 and the carrier wafer is weak and the thinning / There is a problem in that the carrier wafer can not be separated from the process and the reliability of the device wafer deteriorates. When the thickness exceeds 10 mu m, the adhesive force between the first adhesive layer 11 and the carrier wafer becomes too strong, Separation is not easy when the carrier wafer is separated from the temporary adhesive film for reuse, and the total thickness of the temporary adhesive film increases as the thickness of the first adhesive layer 11 increases, which is highly undesirable in view of thinning of the film.

Next, the core layer 12 facing the above-described first adhesive layer 11 will be described.

The core layer 12 serves to support the temporary adhering film according to the present invention and to perform the lamination process more smoothly when laminating the temporary adhering film to the carrier wafer and to prevent the lamination of the carrier wafer and the device wafer The second adhesive layer and the core layer collectively remove the stress generated when the back surface of the device wafer is ground, and the function of easily removing the temporary adhesive film from the carrier wafer after the carrier wafer and the device wafer are separated. The core layer 12 can be used without limitations in the case of a film having no change in physical properties and shape in a chemical environment due to various high temperature physical environments or etching by chemical substances, have. (PEEK), polyethyleneimine (PEI), polyimide (PI) and polyethersulfone (PES), preferably polyetheretherketone (PEEK), polyetheretherketone , And it is preferable to use a polyimide film when considering the purchase unit price while exhibiting a physical property of an appropriate level or higher. The core layer may preferably be a first adhesive layer, a second adhesive layer and a film having a surface roughness formed by this method in order to improve the adhesive strength.

The thickness of the core layer 12 may be preferably 10 to 90 占 퐉, and more preferably 20 to 90 占 퐉 in terms of preventing deformation of the film. If the thickness of the core layer 12 is less than 10 占 퐉, wrinkles may occur due to the adhering of the temporary adhesive film to the carrier wafer and the device wafer, and subsequent high temperature conditions during the thin film / There is a problem in that the occurrence of such wrinkles or shapes may cause problems such as separation of the device wafer and / or carrier wafer, and thus the process can not proceed or the reliability of the manufactured device wafer may be deteriorated. In addition, when the thickness of the core layer 12 exceeds 90 탆, the total thickness of the temporary adhesive film is increased to cause problems in the thinning of the film and compatibility with the conventional thin film / backside processing equipment, The thickness of the core layer 12 increased within the total thickness range may have a problem that the thickness of the first adhesive layer and / or the second adhesive layer is relatively reduced, and the function of the layer can not be properly expressed.

Next, the second adhesive layer 13 formed on the core layer 12 facing the other surface on which the first adhesive layer 11 is not formed will be described.

The second adhesive layer 13 has the function of adhering the device wafer and does not physically affect the device wafer after the process has ended without causing the device wafer to separate and clear during the thin film / It is possible to retain an adhesive force such that it can be separated easily. Accordingly, the second adhesive layer 13 and the core layer 12 can satisfy the following conditions (3) and (4).

(3) the adhesive strength measured by the following Measuring Method 3 is 2 to 10 gf / 25 mm, and (4) the adhesive strength measured by the following Measuring Method 4 is 5 to 25 gf / 25 mm.

First, the adhesive strength measured by the condition (3) was determined by attaching the second adhesive layer side of the specimen to the SUS 304 with a 2-kg roller according to JIS Z 0237 in accordance with JIS Z 0237 And stored at 25 ° C and 55% relative humidity for 1 hour, and then measured at a bonding strength of 180 ° at a peeling speed of 300 mm / min using a tensile tester. As the condition (4), the measured adhesive strength was evaluated as follows. The test piece cut into a size of 2.5 cm x 10 cm in width and length was adhered to SUS 304 with a 2 kg roller in accordance with JIS Z 0237 And after storage for 1 hour at a temperature of 25 ° C and 55% relative humidity, and then for 60 minutes at 200 ° C, 180 ° adhesive strength was measured at a peeling rate of 300 mm / mim using a tensile tester .

Although the bonding strength does not directly indicate the bonding strength between the device wafer and the second bonding layer 13, the second bonding layer 13 satisfying the above bonding strength can satisfy the desired level of bonding strength between device wafers have. If the adhesive strength is not satisfied, the process can not be carried out as the device wafer is separated during the thin film / backside machining process or gap between the device wafer and the second adhesive layer occurs, As the void repeats expansion and contraction, the device wafer may break or the reliability may deteriorate.

The second adhesive layer 13 may be formed on the core layer through an adhesive composition, and the adhesive composition may be formed through an adhesive composition comprising an adhesive resin and a solvent, and further includes a crosslinking agent, a curing accelerator, and the like . The specific kind of the adhesive composition and the mixing ratio thereof can be changed without limitation as long as the adhesive strength described above can be expressed. However, the adhesive composition preferably contains 60 to 200 parts by weight of a solvent relative to 100 parts by weight of the adhesive resin, which may be advantageous for manifesting the adhesive strength. When a crosslinking agent is further included depending on the type of the adhesive resin, the crosslinking agent may be contained in an amount of 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive resin. In the case of the curing catalyst, .

Specifically, the adhesive resin may be a thermosetting adhesive resin, and may be used without limitation in chemical resistance and heat resistance so as to facilitate the thin film / backside processing of a device wafer, and capable of exhibiting a desired adhesive force have. As a non-limiting example, rubber, epoxy, acrylic, silicone resin, etc. may be used alone or in combination of two or more. As a non-limiting example of the rubber system, acrylonitrile butadiene rubber, butadiene rubber, butyl rubber, styrene butadiene rubber, nitrile rubber, etc. may be used alone or in combination of two or more. As the non-limiting examples of the epoxy resin, there may be mentioned glycidyl ether type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, linear aliphatic epoxy resin, alicyclic type epoxy resin cycloaliphatic epoxy resins, heterocyclic ring-containing epoxy resins, substituted epoxy resins, naphthalene-based epoxy resins, and derivatives thereof, which may be either bifunctional or multifunctional resins and may be used alone or in combination of two or more. And a known epoxy resin can be used. In addition, in the case of acrylic resin, it is also possible to use methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, n-butyl methacrylate, n-butyl methyl methacrylate, acrylic acid, methacrylic acid, itaconic acid, Acrylamide, methylol acrylamide, glycidyl methacrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, 2-ethylhexyl acrylate polymer or terpolymer, May be used alone or in combination of two or more.

The silicone resin may be a resin containing a silicon-bonded hydrogen atom, a hydroxy group or a hydrolyzable group, and may be a silicone resin known in the art and manufactured by a well-known technique. Such a silicone resin can typically be prepared by cohydrolysis of a suitable mixture of silane precursors in an organic solvent such as toluene. For example, the silicone resin may comprise a silane of the formula R ¹ R ² ₂ SiX and a silane of the formula R ² SiX ₃ Wherein R ¹ is a C ₁ to C ₁₀ hydrocarbyl or C ₁ to C ₁₀ halogen-substituted hydrocarbyl, R ² is R ¹ , -H or a hydrolyzable group, and X is a hydrolyzable group The hydrolysable group can be prepared by reacting the silicon-bonded groups in water at any temperature from room temperature (-23 占 폚) to 100 占 폚, for example, within 30 minutes (Si-OH) group in the presence or absence of a catalyst in the presence of a catalyst. Examples of hydrolysable groups represented by R ² include -Cl, -Br, -OR ₃ , -OCH _{2 CH 2 OR 3, CH 3} C (= O) O-, Et (Me) C = NO-, CH 3 C (= O) N (CH 3 ) - and -ONH ₂ , wherein R ³ is a C ₁ to C ₈ hydrocarbyl or a C ₁ to C ₈ halogen-substituted hydrocarbyl.

However, among the adhesive resins listed above, the heat resistance of the rubber-based resin may deteriorate and may not be suitable for thin film / backside processing of device wafers under high temperature conditions. In the case of epoxy resins, modulus after curing remarkably lowers, / Is not suitable for the backside machining process, and there is a problem that the bump filling property and the adhesion force can be reduced between the device wafer and the temporary adhesive film. In addition, in the case of an acrylic resin, since the heat resistance is poor, a silicone resin is preferably used so as to exhibit a desired adhesive force, and may be more preferable in terms of heat resistance and chemical resistance.

In addition, the solvent can be used without limitation in the case of a solvent which normally has no problem in dissolving the adhesive resin as described above, and as a non-limiting example, a saturated aliphatic hydrocarbon such as n-pentane, Cyclic aliphatic hydrocarbons such as cyclopentane and cyclohexane; aromatic hydrocarbons such as benzene, toluene, xylene and mesitylene; cyclic ethers such as tetrahydrofuran (THF) and di Hexane and the like), ketones such as methyl isobutyl ketone (MIBK), methyl ethyl ketone (MEK), halogenated alkanes such as trichloroethane and halogenated aromatic hydrocarbons such as bromobenzene and chlorobenzene, But is not limited thereto. The organic solvent may be a single organic solvent or a mixture of two or more different organic solvents, each as defined above.

In addition, the specific kind of the crosslinking agent may vary depending on the specific kind of the above-mentioned adhesive resin, thus to as a non-limiting _{example, MeSi (OCH 3) 3,} CH 3 Si (OCH 2 CH 3) 3, CH 3 Si _{(OCH 2 CH 2 CH 3)} 3, CH 3 Si [O (CH 2) 3 CH 3] 3, CH 3 CH 2 Si (OCH 2 CH 3) 3, C 6 H 5 Si (OCH 3) 3, C _{6 H 5 CH 2 Si (OCH} 3) 3, C 6 H 5 Si (OCH 2 CH 3) 3, CH 2 = CHSi (OCH 3) 3, CH 2 = CHCH 2 Si (OCH 3) 3, CF 3 CH _{2 CH 2 Si (OCH 3)} 3, CH 3 Si (OCH 2 CH 2 OCH 3) 3, CF 3 CH 2 CH 2 Si (OCH 2 CH 2 OCH 3) 3, CH 2 = CHSi (OCH 2 CH 2 OCH _{3) 3, CH 2 = CHCH} 2 Si (OCH 2 CH 2 OCH 3) 3, C 6 H 5 Si (OCH 2 CH 2 OCH 3) 3, Si (OCH 3) 4, Si (OC 2 H 5) 4 And alkoxysilanes such as Si (OC ₃ H ₇ ) ₄ ; _{CH 3 Si (OCOCH 3) 3} , CH 3 CH 2 Si (OCOCH 3) 3 and CH ₂ = CHSi (OCOCH ₃₎ Ogaki quinoa three silane, such as _{3;, CH 3 Si [ON} = C (CH 3) CH _{2 CH 3] 3, Si [} oN = C (CH 3) CH 2 CH 3] 4 and _{CH 2 = CHSi [oN = C} (CH 3) CH 2 CH 3] 3 and so on of the organosilane noi mino oxy silane;, CH _{3 Si [NHC (= O)} CH 3] 3 , and _{C 6 H 5 Si [NHC (} = O) CH 3] silane FIG amino organosilane quinoa set, such as _{3;, CH 3 Si [NH} (SC 4 H 9] 3 and _{CH 3 Si (NHC 6 H 11} ) an aminosilane such as _3; including and organo-amino-oxy-silane, but is not this limit the cross-linking agent is a mixture of two or more different silane, such as a single silane or described, respectively above .

In the case of the curing catalyst, a catalyst used for conventional thermal curing may be used without limitation, and the specific kind may be changed depending on the type of the adhesive resin used. As a non-limiting example, it may include a platinum group metal selected from platinum, rhodium, ruthenium, palladium, osmium or iridium metal, or an organometallic compound thereof or a combination thereof, which may be used alone or in combination of two or more .

The adhesive composition for forming the second adhesive layer may be the same as the adhesive composition capable of forming the first adhesive layer and may be a different composition for developing the desired adhesive force. When the adhesive layer 2 is made of a silicone resin, a specific kind may be used in order to manifest a desired adhesive strength.

The method of forming the second adhesive layer 13 through the above-mentioned adhesive composition may be a method of forming a film on a conventional support member. As a non-limiting example, a comma coating, a reverse coating, Coating, gravure coating, braiding coating, silk screen coating and slot die head coating. More specifically, the adhesive composition may be coated on one side of the core layer 12 by any one of the above methods and dried at a temperature of 120 to 170 ° C and 200 to 230 ° C for 3 to 6 minutes, respectively. However, the present invention is not limited to such a production method. The thickness of the second adhesive layer 13 thus manufactured may preferably be 48 to 70 占 퐉, and the critical meaning of the thickness of the second adhesive layer 13 is not described here.

The order of forming the second adhesive layer 13 and the first adhesive layer 11 in the core layer 12 is not limited, and either of them may be formed first or simultaneously.

The present invention also provides a temporary adhesive film for a thermosetting semiconductor wafer according to the present invention; A carrier wafer formed on the first adhesive layer of the temporary adhesive film; And a device wafer formed on the second adhesive layer of the temporary adhesive film, and a temporary adhesive film comprising the temporary adhesive film.

2 is a cross-sectional view of a laminate according to a preferred embodiment of the present invention, in which a carrier wafer 20 is attached so as to face the first adhesive layer 11 included in the temporary adhesive film 10, The device wafer 30 may be attached so as to face the second adhesive layer 13 included in the film 10. The thickness of such a laminate may range from 1.3 to 1.8 mm and if the thickness of the laminate falls outside of this range compatibility with the equipment used in the thin film / backside processing of the device wafer may be a problem.

First, the carrier wafer 20 may be a conventional material having a strength necessary to prevent damage or deformation of the semiconductor wafer in processes such as thin film / backside processing and transporting the device wafer. Preferably, the carrier wafer 20 is made of glass, , And acryl-based materials. Preferably, the silicon-based material is used to improve chemical resistance in a stress relief process (a process of planarizing the polished surface with fluoric acid or the like) after the thinning treatment of the wafer There is an advantage that can be made. However, since the carrier wafer and the device wafer have the same linear expansion coefficient as that of the material used for the device wafer, it is possible to prevent warpage of the wafer that may occur during thin film / backside processing under high temperature conditions. Such a carrier wafer may preferably have a thickness of 600 to 800 탆.

A bonding strength of a certain level or more is required between the carrier wafer 20 and the first adhesive layer 11 of the temporary adhesive film 10 and when the adhesive strength is not retained in the thin film / The device wafer can not be supported, the device wafer may be broken, and it may be difficult to transfer the wafer during the process. Further, since the carrier wafer 20 and the temporary adhesive film 10 in a bonded state after the separation of the device wafer are not discarded but the carrier wafer must be recycled again, the higher the bonding strength is, the better the carrier wafer and the temporary adhesive film It is preferable that the bonding strength is a certain value or less so as to facilitate separation.

Accordingly, the adhesive force between the first adhesive layer 11 and the carrier wafer 20 can satisfy the following conditions (5) and (6).

(5) The adhesive strength measured by the following measuring method 5 is 50 to 200 gf / 25 mm, and (6) the adhesive strength measured by the following measuring method 6 is 100 to 300 gf / 25 mm.

First, the adhesive strength of the condition (5) was obtained by cutting a temporary adhesive film to a size of 2.5 cm × 10 cm in width and length in accordance with JIS Z 0237 on a first adhesive layer surface of a silicon wafer LG Siltron) at a temperature of 25 ° C and a relative humidity of 55% for 1 hour, and then measured for 180 ° adhesive strength at a peeling speed of 300 mm / min using a tensile tester. The adhesive strength of the condition (6) was obtained by cutting a temporary adhesive film to a size of 2.5 cm x 10 cm in width and length in accordance with JIS Z 0237 on a first adhesive layer surface of a specimen on a silicon wafer 2 kg of rollers and stored at 25 ° C and 55% relative humidity for 1 hour. After heat treatment at 200 ° C for 60 minutes, 180 ° adhesive strength at 300 mm / min peel rate using a tensile tester Measurement results.

The carrier wafer may not be separated from the device wafer when the bonding strengths of the conditions (5) and (6) are satisfied, and the carrier wafer may be easily separated from the temporary adhesive film after the device wafer is separated and reused A more preferable laminate can be realized.

Next, the device wafer 30 will be described.

The device wafer 30 may be a conventional device wafer containing bumps and may be a silicon wafer, a potassium-arsenic wafer, a gallium-in wafer, a germanium wafer, a gallium-arsenic-aluminum wafer, And may preferably be a silicon-based wafer. The thickness of the device wafer may be 600 to 800 占 퐉 before the thin film process, and the thickness including the bump may be 700 to 900 占 퐉.

The surface of the device wafer 30 facing the second adhesive layer 13 of the temporary adhesive film 10 may be a circuit formation surface on which bumps and the like are formed. The second adhesive layer 13 and the device wafer 30 are configured such that the device wafer 30 does not cause separation or clearance during the thin film / backside machining process and does not physically affect the device wafer after the process is terminated. The adhesive strength between the second adhesive layer 13 and the device wafer 30 can satisfy the following conditions (7) and (8).

(7) The adhesive strength measured by the following measuring method 7 is 2 to 10 gf / 25 mm, and (8) the adhesive strength measured by the following measuring method 8 is 5 to 25 gf / 25 mm.

First, the adhesive strength of the condition (7) was obtained by cutting a temporary adhesive film to a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237, using a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) was attached to a spin-coated silicon wafer having a thickness of 1 μm with a 2-kg roller and stored at a temperature of 25 ° C. and a relative humidity of 55% for 1 hour, and then a tensile tester at 300 mm / min The adhesive strength was measured at a peeling speed of 180 °. The adhesive strength of the condition (8) was obtained by cutting a temporary adhesive film to a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237 using a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) was attached to a spin-coated silicon wafer (LG Siltron) with a thickness of 1 탆 with a 2 kg roller and stored at 25 ° C and 55% relative humidity for 1 hour and then at 200 ° C for 60 minutes After completion of the interheat treatment, 180 ° adhesive strength was measured at a peeling speed of 300 mm / min using a tensile tester.

If the adhesive strength is not satisfied, the process can not be carried out as the device wafer is separated during the thin film / backside machining process or gap between the device wafer and the second adhesive layer occurs, As the void repeats expansion and contraction, the device wafer may break or the reliability may deteriorate.

Meanwhile, according to a preferred embodiment of the present invention, the device wafer 30 may further include a protective layer and may be attached to the second adhesive layer 13. 3 is a cross-sectional view of a laminated body according to a preferred embodiment of the present invention, in which a protective layer 40 is formed on a circuit-formed surface including a device wafer 30, preferably a bump, a circuit pattern, or the like The protective layer 40 may be adhered to the second adhesive layer 13 of the temporary bonding film.

The protective layer 40 protects the pattern formed on the circuit formation surface of the device wafer 30 and allows the carrier wafer 20 and the temporary adhesive film 10 to be easily separated after the step of thinning / And may be formed on the device wafer by any one of a spin coating method, a comma coating method, a reverse coating method, a gravure coating method, a braid coating method, a silk screen coating method and a slot die head coating method. Such a protective layer can be removed from the device wafer by, for example, cleaning after separating the carrier wafer and the temporary adhesive film after completion of thin film / back surface processing of the device wafer.

The protective layer 40 may include a curing type silicone resin, a curing type fluorine type resin, an alcohol type, a wax type and the like. The curing type resin such as a solvent addition type resin, a solvent condensation type resin, a no solvent type addition type resin, Type resin may be used alone or in combination of two or more. It is preferable to use a curable silicone resin which can minimize the compatibility with the device wafer and the influence on the bumps.

The protective layer 40 may further include a curing agent in addition to the curable silicone resin. The content of the curing agent is preferably 0.5-5.0 wt%, more preferably 1.0-3.0 wt% of the total composition of the protective layer (40). If the content of the curing agent is less than 0.5% by weight, there may arise a problem that silicone transfer occurs on the pattern on the surface of the device wafer 30 due to uncured curing. When the content of the curing agent exceeds 5.0% by weight, The control of the curing rate is difficult, and the pot life of the liquid of the protective layer 40 can be shortened. The composition of the protective layer 40 may include a solvent. The solvent may be an aqueous or organic solvent, but is not particularly limited.

The laminate according to the present invention as described above is manufactured by (1) adhering a carrier wafer on a first adhesive layer included in a temporary adhesive film according to the present invention so as to face the device wafer on a second adhesive layer included in the temporary adhesive film, To form a laminate; (2) cutting the temporary adhesive film and the device wafer interface at either end of the laminate; And (3) removing the carrier wafer and the temporary adhesive film from the laminated body by separating the carrier wafer and the temporary adhesive film at a predetermined angle from one end of the cut laminated body so that the device wafer is separated from the laminate do.

First, the step (1) will be described.

The step (1) is a step of attaching the device wafer 30 and the carrier wafer 20 to the temporary adhesive film 10 according to the present invention.

The order of bonding the carrier wafer 20 and the device wafer 30 to the temporary adhesive film 10 is not limited and may be bonded at the same time or one of the layers may be bonded first and the other layer may be bonded.

The device wafer 30 may be bonded to the second adhesive layer 13 of the temporary adhesive film 10 after the carrier wafer 20 is bonded to the first adhesive layer 11 of the temporary adhesive film 10 And the process for bonding after the bonding is preferably performed under vacuum decompression in order to prevent defects of the device wafer by bubbles in advance. In order to minimize the occurrence of voids between the bump formed on the device wafer and the temporary adhesive film 10, the temperature is preferably from 50 to 200 DEG C, preferably from 100 to 150 DEG C for from 1 to 10 minutes, more preferably from 2 to 5 minutes Heat and / or a pressure of 50 to 5000 kgf, with a degree of vacuum of 10 torr to 10 ^-3 torr, preferably 1 torr to 10 ^-2 torr.

According to a preferred embodiment of the present invention, the device wafer 30 may be a device wafer on which a protective layer (40 in FIG. 3) is formed on the circuit formation surface, in which case the second adhesive layer 13 may be bonded to the protective layer 40 to perform the above-described lamination process.

Next, after step (1), the device wafer 30 included in the laminate includes: (a) thinning the other surface of the device wafer not facing the temporary adhesive film; And (b) performing back-processing on the thin-film-processed surface.

The thin film treatment in the step (a) may be a conventional grinding process, and a known grinding method and apparatus may be used. The grinding is preferably performed while supplying water to the wafer and the grindstone (diamond or the like) and cooling it.

The step (b) may be performed with various processes used at the wafer level as a step of processing the back surface of the thin film processed device wafer. Specifically, electrode formation, metal wiring formation, and protective film formation can be carried out. More specifically, metal sputtering for formation of electrodes and the like, wet etching for etching metal sputtering layer, Forming a pattern by exposure, development, peeling of a resist, dry etching, formation of metal plating, silicon etching for TSV formation, formation of an oxide film on a silicon surface, and the like. As a specific method for this, conventionally known methods can be used.

And (2) a step (2) of cutting the interface between the temporary adhesive film and the device wafer at one end of the laminate.

4 is a schematic view showing a separation process according to a preferred embodiment of the present invention. It can be seen that the adhesive is cut between the temporary adhesive film 10 and the device wafer interface 30 at one end of the laminate. The cutting method can be performed by a conventional method and can be used without limitation as long as the method does not affect the device wafer.

Next, in step (3), a step of removing the carrier wafer and the temporary adhesive film from the laminated body by separating the carrier wafer 20 and the temporary adhesive film 10 from one end of the cut laminated body at a predetermined angle do.

The specific angle and spacing can be changed without limitation to the extent that there is no influence on the device wafer, and can be separated by a conventional method such as peeling through jig or tape attachment.

4 and 5 are schematic views illustrating a separation process according to a preferred embodiment of the present invention. As shown in FIG. 4, a carrier wafer 20 and a temporary adhesive film 10, which are included in one end of a laminate, 5 'from the P direction to the P' direction and can be removed as shown in FIG. 5.

6 is a schematic view showing a separation process according to a preferred embodiment of the present invention. When the protective layer 40 is formed on the circuit formation surface of the device wafer 30, the carrier wafer 20 and the temporary adhesion The film 10 can be continuously lifted and removed at a constant angle in the Q direction with respect to the protective film 40 and the device wafer 30.

The present invention will now be described more specifically with reference to the following examples. However, the following examples should not be construed as limiting the scope of the present invention, and should be construed to facilitate understanding of the present invention.

≪ Example 1 >

The following adhesive composition for a device wafer was filtered using a capsule filter having a pore diameter of 0.6 占 퐉, and then a polyimide film (LN Grade, SKC Kolon PI Corporation) having a thickness of 25 占 퐉 on both surfaces of which was corona- Coated with polyethylene terephthalate (PET) protective film (SRF-T38-1L, manufactured by Zerontec Co., Ltd.) having a thickness of 38 mu m and then coated with a comma coater and dried at 150 DEG C and 220 DEG C for 5 minutes, ) Was laminated to obtain a first temporary adherent film coated with a device adhesive (second adhesive layer) having a thickness of 50 mu m from which toluene and unreacted silicone monomers had been removed.

Then, the following adhesive composition for a carrier wafer was filtered using a capsule filter having a pore diameter of 0.6 탆, coated on the other surface of the polyimide film using a comma coater, dried at 120 캜 and 150 캜 for 5 minutes, (SRF-T38-1L, Zerontec Co., Ltd.) laminated with a fluorine release-treated polyethylene terephthalate (PET) protective film having a thickness of 38 탆 was coated with a toluene and unreacted silicone monomer- First adhesive layer) to obtain a second temporary adhesive film coated to a thickness of 7.5 mu m. The secondary temporary adhesive film was then aged for 12 hours in an oven fixed at 60 占 폚 to prepare a temporary adhesive film as shown in Table 1 having a thickness of 84.5 占 퐉.

      (1) Adhesive composition for device wafer

100 parts by weight of toluene (Toluene) as a solvent was added to 100 parts by weight of a thermosetting silicone adhesive (DC-7657, Dow Corning), followed by mixing using a stirrer. 1.204 parts by weight of a crosslinking agent (SO-7678, Dow Corning) was added to 100 parts by weight of the silicone adhesive, followed by stirring at room temperature for 2 hours. Thereafter, 0.82 part by weight of a platinum catalyst (NC-25, Dow Corning) was added to 100 parts by weight of the silicone adhesive as a curing catalyst and re-crosslinked at room temperature for 2 hours to prepare a bonding composition for a device wafer.

(2) Adhesive composition for carrier wafer

100 parts by weight of toluene (Toluene) as a solvent was added to 100 parts by weight of a thermosetting silicone adhesive (DC-7660, Dow Corning), followed by mixing using a stirrer. 1.204 parts by weight of a crosslinking agent (SO-7028, Dow Corning) was added to the mixture based on 100 parts by weight of the silicone adhesive, followed by stirring at room temperature for 2 hours. Thereafter, 0.82 part by weight of a platinum catalyst (NC-25, Dow Corning) was added to 100 parts by weight of the silicone adhesive as a curing catalyst and re-crosslinked at room temperature for 2 hours to prepare a bonding composition for a carrier wafer.

≪ Examples 2 to 15 >

The thicknesses of the first adhesive layer, the core layer, and the second adhesive layer were changed as shown in Table 1 to prepare a temporary adhesive film.

≪ Comparative Examples 1 to 4 >

The thicknesses of the first adhesive layer, the core layer, and the second adhesive layer were changed as shown in Table 1 to prepare a temporary adhesive film.

≪ Comparative Example 5 &

After mixing 71% by weight of the vinyl functional silicone resin and 29% by weight of the Si-H functional polydimethylsiloxane, 100 parts by weight of the mixture was treated with 150 parts by weight of mesitylene and stirred at room temperature for 2 hours. Then, 20 ppm of platinum acetylacetonate was added to the mixed solution, and the mixture was stirred at room temperature for 2 hours to prepare a temporary adhesive composition.

<Experimental Example 1>

The following properties of the temporary adhesive films prepared through the above Examples and Comparative Examples 1 to 4 were measured and shown in Tables 1 and 2 below.

1. Evaluate the satisfaction of the conditions (1) to (5)

The first adhesive layer, the core layer and the second adhesive layer of the prepared temporary adhesive film were evaluated to satisfy the following conditions. And when it is not satisfied, it is indicated by X.

(1) [Relation 1]

(2) [Relation 2]

(3) [Relation 3]

(4) Thickness of the second adhesive layer 48 to 70 탆

(5) [Relational expression 4]

2. Interlayer adhesion strength measurement

* Measurement of adhesive strength between first adhesive layer and core layer

A temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237, and the first adhesive layer side of the specimen was attached to a SUS 304 with a 2 kg roller, and a temperature of 25 ° C. and a relative humidity of 55% At room temperature for 1 hour, and then measured for 180 ° adhesive strength at a peeling speed of 300 mm / min using a tensile tester.

In addition, a test piece cut into a size of 2.5 cm x 10 cm in width and length was adhered to a first adhesive layer side of a specimen by SUS 304 with a 2 kg roller in accordance with JIS Z 0237, and a temperature of 25 ° C and a relative humidity of 55% After storage for 1 hour in a humid condition and then heat treatment at 200 ° C for 60 minutes, a 180 ° adhesive strength was measured at a peeling speed of 300 mm / mim using a tensile tester.

* Measurement of adhesive strength between second adhesive layer and core layer

The temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length, and the second adhesive layer side of the specimen was attached to SUS 304 using a roller of 2 kg in accordance with JIS Z 0237, and a temperature of 25 ° C. and a relative humidity of 55% At room temperature for 1 hour, and then measured for 180 ° adhesive strength at a peeling speed of 300 mm / min using a tensile tester.

In addition, a temporary adhesive film cut into a size of 2.5 cm × 10 cm in length and width was adhered to a second adhesive layer side of a specimen by SUS 304 with a 2 kg roller according to JIS Z 0237, and a temperature of 25 ° C. and a relative humidity of 55% After storage for 1 hour in a humid condition and then heat treatment at 200 ° C for 60 minutes, a 180 ° adhesive strength was measured at a peeling speed of 300 mm / mim using a tensile tester.

<Experimental Example 2>

The following properties of the temporary adhesive films prepared in Examples and Comparative Examples were measured and shown in Table 1.

1. Measurement of bond strength between carrier wafer and temporary adhesive film

A sample adhered to the surface of the first adhesive layer of the specimen was attached to a silicon wafer which had not been subjected to any surface treatment with a roller of 2 kg in accordance with JIS Z 0237, and the adhered adhesive film was cut at a size of 2.5 cm x 10 cm And 55% relative humidity for 1 hour and then measured at a 180 ° adhesive strength at a peeling rate of 300 mm / min using a tensile tester.

In addition, a temporary adhesive film cut into a size of 2.5 cm x 10 cm in width and length was attached to a silicon wafer on which no surface treatment was performed with a 2 kg roller according to JIS Z 0237, And a relative humidity of 55% for 1 hour, and after the completion of heat treatment for 60 minutes at 200 DEG C, a 180 DEG adhesive strength was measured at a peeling speed of 300 mm / mim using a tensile tester.

2. Measurement of adhesion strength between device wafer and temporary adhesive film

A test piece cut into a size of 2.5 cm x 10 cm in length and width was adhered to a second adhesive layer side of a specimen according to JIS Z 0237 with a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) (LG Siltron) with a roller of 2 kg and stored for 1 hour at a temperature of 25 ° C and a relative humidity of 55%, and then measured at a peeling rate of 300 mm / min using a tensile tester at 180 ° The adhesive strength was measured.

In the measurement method 2, the temporary adhesive film was cut into a size of 2.5 cm × 10 cm in length and the surface of the second adhesive layer of the specimen was treated with a silicone release agent (KS-3755, Shin-Etsu Chemical Co.) in accordance with JIS Z 0237. , LTD.) Was attached to a spin-coated silicon wafer (LG Siltron) having a thickness of 1 탆 with 2 kg of rollers and stored for 1 hour at a temperature of 25 캜 and 55% relative humidity, followed by heat treatment at 200 캜 for 60 minutes After completion, the adhesive strength at 180 ° was measured at a peeling speed of 300 mm / min using a tensile tester.

<Experimental Example 3>

A 12-inch carrier wafer (LG Siltron) was bonded so as to face the first adhesive layer of the temporary adhesive film prepared in the above Examples and Comparative Examples 1 to 4, and an average height of 15 um (15 mm) to face the second adhesive layer of the temporary adhesive film (Diameter: 300 mm, thickness: 725 μm, chip shape: 10 mm × 10 mm) in which bump electrodes of ± 2 μm were arranged in a lattice arrangement of 100 μm pitch in each chip Square and a chip pattern was formed over the entire surface of the wafer), and then heat and pressure were applied at 150 DEG C and 500 kgf for 5 minutes under 0.5 torr vacuum to produce a laminate. The following physical properties of the laminate were measured and shown in Tables 1 and 2 below.

The device wafer was prepared by diluting a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) with toluene on a circuit formation surface and then using a device wafer having a protective layer spin- Respectively.

On the other hand, in the case of the temporary adhering composition prepared in Comparative Example 5, a bump electrode having an average height of 15 μm (15 ± 2 μm) was arranged in a lattice arrangement of 100 μm pitch and 1369 pieces per chip (37 × 37 = 1369 ) Was spin-coated on the temporary adherend composition of Comparative Example 5 to a device wafer (diameter: 300 mm, thickness: 725 μm, chip shape: square of 10 mm × 10 mm, chip pattern formed over the entire surface of the wafer) And the residual mesitylene solvent was removed by soft baking. The time required for spin coating was about 60 seconds per coating. The soft baking conditions were carried out for 5 minutes at 150 ° C fixed hot plate. Subsequently, a carrier wafer (LG Siltron) was bonded in a vacuum chamber at 120 ° C for 2 minutes on the temporary adhesive composition from which the solvent had been removed to prepare a laminated body. The obtained laminate was cured at 200 ° C for 10 minutes for hard baking of the temporary adhering composition of Comparative Example 5 to prepare a laminate in which curing of the temporary adhering composition was completed. The remaining properties are shown in Tables 1 and 2 except for the items.

1. Adhesion evaluation

The state of adhesion between the interface between the device wafer and the temporary adhesive film was observed with a naked eye and an optical microscope. The case where voids were not generated was evaluated as? (Excellent), the case where voids were 1 to 3 was evaluated as? (Good) (Abnormal) was evaluated as? (Normal) and? (Defective).

2. Resistance to abrasion

The back surface of the device wafer of the laminate was ground by using a backside grinder (DFG850, manufactured by DISCO Corporation), and the back surface of the device wafer of the laminate was ground to a thickness of 50 mu m. . (Good), a case where the device wafer was broken or an adhering adhesive film was peeled off was evaluated as? (Normal) and? (Poor).

3. Deformation resistance of temporary adhesive film core layer shape

The shape of the core layer included in the laminate was observed with a naked eye and an optical microscope to determine whether the shape of the core layer was corrugated or deformed by o (excellent) ).

4. Heat resistance

The laminate was placed in an oven at 250 ° C under a nitrogen atmosphere for 1 hour, cooled, and visually inspected by naked eyes and an optical microscope. The case where the abnormality did not occur was evaluated as O (excellent), and the case where the abnormality occurred was evaluated as DELTA (normal) and X (defective).

5. Chemical resistance

The laminate was impregnated in a container containing 70 wt% aqueous sulfuric acid solution, 70 wt% aqueous sodium hydroxide solution and TMF for 2 hours, and visually inspected by visual observation and optical microscope. The case where the abnormality did not occur was evaluated as O (excellent), and the case where the abnormality occurred was evaluated as DELTA (normal) and X (defective).

6. Peelability

At the one end of the laminate, the temporary adhesive film and the device wafer interface were cut with a knife, and the carrier wafer and the temporary adhesive film were lifted with tweezers. Thereafter, visual inspection was performed by naked eye and an optical microscope, and when the device wafer was not cracked or cracked, no abnormality was evaluated as O (excellent), and when the abnormality occurred, it was evaluated as DELTA (normal) and X .

7. Carrier Wafer Reusability

The interface between the temporary adhesive film and the device wafer was cut by a knife and the carrier wafer was lifted. Thereafter, visual inspection was carried out to see if the carrier wafer was cracked, cracked or the like was not generated, and the case where the abnormality occurred was evaluated as? (Normal) and? (Defective).

8. Equipment compatibility

The apparatus compatibility with the DFG850 manufactured by DISCO Co., Ltd., which is used for the backside processing of the device wafer, was evaluated. When there was no problem in equipment compatibility, the evaluation was made as O (excellent), and the case where the problem occurred was rated as DELTA (normal) .

9. Evaluation of the UPH of the laminate per hour

The time taken to complete the fabrication of the bonded body in the preparation stage of the carrier and device wafers for producing the laminate was measured with a stopwatch. At this time, the laminated equipment was tested with TSV Temporary Wafer Bonding System (Kostek System Incorporation). Further, the laminate production test was carried out for one hour, and it was tested whether a number of laminate materials could be produced per hour.

Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 a 7.5 5 5 5 9.5 5 7.5 7.5 7.5 7.5 b 25 25 12.5 15 25 25 50 60 60 87.5 c 50 50 50 50 50 65 50 50 70 50 Total thickness 82.5 80 67.5 70 84.5 95 107.5 117.5 137.5 145 Condition 1 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 29.95 29.37 24.78 25.7 30.42 32.84 39.03 42.66 46.34 52.65 Condition 2 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 38.31 43.86 36.55 38.01 35.41 52.63 51.08 56.19 66.41 70.24 Condition 3 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 1.21 1.78 1.64 1.67 0.96 1.94 1.38 1.44 1.56 1.6 Condition 4 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 50 50 50 50 50 65 50 50 70 50 Condition 5 ○ ○ × ○ ○ × × × × × 32.5 30 42.5 40 34.5 45 7.5 -2.5 17.5 -30 Adhesive strength (gf / 25mm) A1 76 62 54 60 143 65 84 91 95 116 A2 143 114 110 133 300 147 193 207 216 258 B1 4.3 4.2 3.6 3.9 4.3 8.5 3.9 4.0 8.8 6.9 B2 15.1 15.8 14.9 15.4 16.2 27.3 14.7 16.0 28.2 21.3 Adhesiveness ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Adhesive strength (gf / 25mm) C1 67 61 56 62 158 58 91 99 101 129 C2 131 129 113 131 305 141 206 227 226 277 D1 3.4 3.7 3.7 3.6 4.1 8.1 3.6 4.1 8.7 6.5 D2 13.5 14.6 13.8 14.4 17.9 27.1 13.1 15.5 29.1 20.8 Abrasion resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ shape
My deformability ○ ○ × △ ○ ○ ○ ○ ○ ○ Heat resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chemical resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Peelability ○ ○ ○ ○ ○ △ ○ ○ × ○ Carrier wafer reusability ○ ○ ○ ○ △ ○ ○ ○ ○ ○ Equipment compatibility ○ ○ ○ ○ ○ ○ ○ ○ △ △ UPH 21 21 21 21 21 21 21 21 20 20

Example 11 Example 12 Example 13 Example 14 Example 15 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 a 7.5 4 7.5 7.5 12 7.5 10 5 5 - b 10 25 25 25 25 100 90 90 10 - c 50 50 45 75 50 50 70 70 45 - Total thickness 67.5 79 77.5 107.5 87 157.5 170 165 60 60 Condition 1 ○ ○ ○ ○ ○ × × × × - 24.51 29.14 28.79 35.66 31 57.19 56.84 56.06 22.56 - Condition 2 × ○ ○ ○ ○ × ○ × × - 30.65 47.24 35.76 51.08 32.75 76.63 74.26 93.56 24.59 - Condition 3 ○ × ○ ○ × ○ ○ × ○ - 1.09 2.22 1.17 1.38 0.77 1.67 1.3 2.56 1.54 - Condition 4 ○ ○ × × ○ ○ ○ ○ × - 50 50 45 75 50 50 70 70 45 - Condition 5 × ○ × × × × × × ○ - 47.5 29 27.5 57.5 37 -42.5 -10 -15 40 - Adhesive strength (gf / 25mm) A1 71 40 76 75 153 121 148 83 43 - A2 138 87 143 142 310 304 336 161 99 - B1 4.1 4.1 4.1 8.2 4.3 8.3 8.4 7.9 3.9 - B2 14.9 15.4 16.6 26.5 16.2 26.7 27.9 26.5 12.8 - Adhesiveness ○ ○ △ ○ ○ × × × △ ○ Adhesive strength (gf / 25mm) C1 69 38 66 68 168 111 138 76 41 - C2 134 79 138 137 325 293 317 153 94 - D1 3.9 4.0 3.7 9.3 4.1 8.1 8.6 8.5 3.5 - D2 13.4 14.6 14.2 30.3 17.9 26.5 28.4 28.6 10.2 - Abrasion resistance ○ △ △ ○ ○ × × × △ ○ shape
My deformability × ○ ○ ○ ○ ○ ○ ○ × ○ Heat resistance ○ ○ ○ ○ ○ ○ ○ ○ △ ○ Chemical resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Peelability ○ ○ ○ × ○ × × × ○ ○ Carrier wafer reusability ○ ○ ○ ○ × △ × ○ ○ △ Equipment compatibility ○ ○ ○ ○ ○ × × × ○ ○ UPH 21 21 21 19 21 19 19 19 21 9

In Tables 1 and 2, a, b, and c indicate the first adhesive layer, the core layer, and the second adhesive layer, respectively.

A1 and A2 are the adhesive strength between the first adhesive layer of the temporary adhesive film and SUS 304, wherein A1 is a measurement result without heat treatment and A2 is a measurement strength after heat treatment at 200 deg.

B1 and B2 are the adhesive strength between the second adhesive layer of the temporary adhesive film and SUS 304, wherein B1 is the measurement result without heat treatment, and B2 is the measurement strength after heat treatment at 200 deg.

Also, C1 and C2 are the bonding strengths between the temporary adhesive film and the carrier wafer, wherein C1 is the measurement result without heat treatment and C2 is the measurement strength after heat treatment at 200 deg.

D1 and D2 are adhesion strengths between the temporary adhesive film and the device wafer, wherein D1 is the measurement result without heat treatment, and D2 is the measurement strength after heat treatment at 200 deg.

Specifically, in Tables 1 and 2, Comparative Examples 1 to 5, which do not satisfy condition 1 according to the present invention, are significantly poor in adhesion as compared with the examples. In addition, in the case of the abrasion resistance, I can confirm that it is not good. Furthermore, it can be confirmed that the equipment compatibility of Comparative Examples 1 to 4 is also very poor.

In addition, in the case of Example 11 which does not satisfy Condition 2 according to the present invention, there is a problem that the shape of the core layer of the temporary adhesive film is deformed, and in the case of Example 12 It can be confirmed that the abrasion resistance is not good as compared with the first embodiment and the reusability of the carrier wafer is remarkably poor as compared with the first embodiment.

In addition, in Example 13, which did not satisfy condition 4 according to the present invention, the abrasion resistance was poor, and in Example 14, the peeling property of the device wafer was inferior.

In addition, Example 3, which does not satisfy Condition 5 according to the present invention, has a problem that the shape of the core layer of the temporary adhesive film is deformed, and in Example 6, the peeling property of the device wafer is deteriorated. In Examples 7, 8 and 10, no great problem was found experimentally, but the total thickness of the temporary adhesive film exceeds 100 mu m, which may be undesirable in view of thinning of the film. In addition, in the case of Example 9, there is a problem that the releasability from the device wafer is poor, and when the condition 5 according to the present invention is not satisfied, it can be confirmed that a film which can not satisfy any of the physical properties can be manufactured.

On the other hand, when a temporary adhesive composition (Comparative Example 5), which is not a film type, was spin-coated on a device wafer to produce a laminate, the properties such as adhesiveness and abrasion resistance were similar to those of the film type embodiment Carrier wafer reusability was poor, and the production amount of the laminate per hour was compared. As a result, the example produced 19 ~ 21 laminate per hour, but in Comparative Example 5, only 9 laminate per hour could be manufactured, It can be confirmed that the film form is excellent in all physical properties and is remarkably excellent also in the production amount per hour.

Claims (20)

A core layer;
A first adhesive layer for adhering a carrier wafer formed on one surface of the core layer; And
And a second adhesive layer for adhering a device wafer formed on the other surface of the core layer, wherein the temporary adhesive film satisfies the following relational expression (1).
[Relation 1]

The method according to claim 1,
Wherein the temporary adhesive film has a total thickness of 65 to 150 占 퐉. The method according to claim 1,
Wherein the temporary adhesive film satisfies the following relational expression (2): &quot; (2) &quot;
[Relation 2]

The method of claim 3,
Wherein the temporary adhesive film satisfies the following relational expression (3): &quot; (1) &quot;
[Relation 3]

5. The method of claim 4,
Wherein the thickness of the second adhesive layer included in the temporary adhesive film is 48 to 70 占 퐉. The method according to claim 1,
Wherein the thickness of the first adhesive layer is 5 to 10 占 퐉 and the thickness of the core layer is 10 to 90 占 퐉. The method according to claim 6,
Wherein the thickness of the core layer is 20 to 90 占 퐉. 6. The method of claim 5,
Wherein the temporary adhesive film satisfies the following relational expression (4): &quot; (4) &quot;
[Relation 4]

The method according to claim 1,
Wherein the first adhesive layer and the core layer satisfy the following conditions (1) and (2).
(1) The adhesive strength measured by the following measuring method 1 is 50 to 200 gf / 25 mm
(2) The adhesive strength measured by the following Measuring Method 2 is 100 to 300 gf / 25 mm

* Adhesive strength measurement method 1
A temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237, and the first adhesive layer side of the specimen was attached to a SUS 304 with a 2 kg roller, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour, and then measure the 180 ° adhesive strength at a peeling rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 2
A temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length according to JIS Z 0237, and the first adhesive layer side of the specimen was attached to a SUS 304 with a 2 kg roller, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour and then heat-treated at 200 ° C for 60 minutes. Then, the adhesive strength at 180 ° is measured at a peeling speed of 300 mm / min using a tensile tester. The method according to claim 1,
Wherein the second adhesive layer and the core layer satisfy the following conditions (3) and (4).
(3) The adhesive strength measured by the following Measuring Method 3 is 2 to 10 gf / 25 mm
(4) The adhesive strength measured by the following measuring method 4 is 5 to 25 gf / 25 mm

* Adhesive strength measurement method 3
The temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length, and the second adhesive layer side of the specimen was attached to SUS 304 using a roller of 2 kg in accordance with JIS Z 0237, and a temperature of 25 ° C. and a relative humidity of 55% For 1 hour, and then measure the 180 ° adhesive strength at a peeling rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 4
The temporary adhesive film was cut in a size of 2.5 cm × 10 cm in width and length, and the second adhesive layer side of the specimen was attached to SUS 304 using a roller of 2 kg in accordance with JIS Z 0237, and a temperature of 25 ° C. and a relative humidity of 55% And after the heat treatment is finished for 60 minutes at 200 ° C, the adhesive strength at 180 ° is measured at a peeling speed of 300 mm / min using a tensile tester. The method according to claim 1,
Wherein the first adhesive layer and the second adhesive layer comprise a silicone-based adhesive binder. The method according to claim 1,
The core layer may be at least one film selected from the group consisting of polyetheretherketone (PEEK), polyethyleneimine (PEI), polyimide (PI) and polyethersulfone (PES) Wherein said adhesive layer is a thermosetting semiconductor wafer. A temporary adhesive film according to any one of claims 1 to 12;
A carrier wafer formed to face the first adhesive layer of the temporary adhesive film; And
And a device wafer facing the second adhesive layer of the temporary adhesive film. 14. The method of claim 13,
Further comprising a protective layer between the device wafer and the temporary adhesive film. &Lt; RTI ID = 0.0 &gt; 11. &lt; / RTI &gt; The method of claim 14, wherein
Wherein the protective layer comprises a curable silicone resin. &Lt; RTI ID = 0.0 &gt; 11. &lt; / RTI &gt; 14. The method of claim 13,
Wherein the adhesive force between the first adhesive layer and the carrier wafer satisfies the following conditions (5) and (6).
(5) The adhesive strength measured by the following measuring method 5 is 50 to 200 gf / 25 mm
(6) The adhesive strength measured by the following measurement method 6 is 100 to 300 gf / 25 mm

* Adhesive strength measurement method 5
A sample adhered to the surface of the first adhesive layer of the specimen was attached to a silicon wafer which had not been subjected to any surface treatment with a roller of 2 kg in accordance with JIS Z 0237, and the adhered adhesive film was cut at a size of 2.5 cm x 10 cm And 55% relative humidity for 1 hour, then measure the 180 ° adhesive strength at a peel rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 6
A sample adhered to the surface of the first adhesive layer of the specimen was attached to a silicon wafer which had not been subjected to any surface treatment with a roller of 2 kg in accordance with JIS Z 0237, and the adhered adhesive film was cut at a size of 2.5 cm x 10 cm And 55% relative humidity for 1 hour and then heat treatment at 200 ° C for 60 minutes. Then, the adhesive strength at 180 ° is measured at a peeling speed of 300 mm / mim using a tensile tester. 14. The method of claim 13,
Wherein the adhesive force between the second adhesive layer and the device wafer satisfies the following conditions (7) and (8).
(7) The adhesive strength measured by the following measurement method 7 is 2 to 10 gf / 25 mm
(8) The adhesive strength measured by the following measurement method 8 is 5 to 25 gf / 25 mm

* Adhesive strength measurement method 7
A test piece cut into a size of 2.5 cm x 10 cm in length and width was adhered to a second adhesive layer side of a specimen according to JIS Z 0237 with a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) The specimens were attached to a spin-coated silicon wafer with a thickness of 2 kg using a roller and stored for 1 hour at a temperature of 25 ° C and relative humidity of 55%, and then subjected to a 180 ° adhesive strength at a peeling rate of 300 mm / min using a tensile tester .

* Adhesive strength measurement method 8
A test piece cut into a size of 2.5 cm x 10 cm in length and width was adhered to a second adhesive layer side of a specimen according to JIS Z 0237 with a silicone release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) Coated with a 2 kg roller and stored at 25 ° C and 55% relative humidity for 1 hour and then heat-treated at 200 ° C for 60 minutes. After the heat treatment was finished, a 300 mm / min The bonding strength at 180 ° is measured at the peeling speed. (1) A carrier wafer is adhered to a first adhesive layer included in the temporary adhesive film according to any one of claims 1 to 12, and a device wafer is adhered on the second adhesive layer included in the temporary adhesive film To form a laminate;
(2) cutting the temporary adhesive film and the device wafer interface at either end of the laminate; And
(3) removing the carrier wafer and the temporary adhesive film from the laminated body by separating the carrier wafer and the temporary adhesive film at a predetermined angle from one end of the cut laminated body, and . 19. The method of claim 18,
Wherein the device wafer in the step (1) includes a protective layer on one surface facing the second adhesive layer, and adheres the protective layer to the second adhesive layer, and the step (2) Wherein the adhesive layer is formed on the adhesive layer. 19. The method of claim 18, further comprising, between (2) and (3)
(a) thinning the other surface of the device wafer not facing the temporary adhesive film; And
(b) performing back-processing on the thin-film-processed surface of the laminated body.

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