KR101243921B1 - Apparatus for thin layer deposition and method of manufacturing apparatus for thin layer deposition - Google Patents

Abstract

In order to form a precise deposition pattern on a large substrate, the present invention provides a deposition source, a first nozzle disposed on one side of the deposition source and having a plurality of first slits, and disposed to face the deposition source. A method of manufacturing a thin film deposition apparatus, comprising: a second nozzle having a second slit; and a second nozzle frame coupled to the second nozzle to support the second nozzle, wherein the second nozzle frame is the second nozzle. It provides a method of manufacturing a thin film deposition apparatus comprising the step of coupling the second nozzle frame and the second nozzle to give a predetermined tensile force to.

Description

Thin film deposition apparatus and thin film deposition apparatus manufacturing method {Apparatus for thin layer deposition and method of manufacturing apparatus for thin layer deposition}

 The present invention relates to a thin film deposition apparatus and a method for manufacturing a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus and a thin film deposition apparatus manufacturing method capable of forming a precise pattern on a large substrate.

Among the display devices, the organic light emitting display device has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

In general, an organic light emitting display device may realize visible light by recombining holes and electrons injected from an anode electrode and a cathode electrode to emit light by recombination in an organic emission layer. However, since such a structure is difficult to realize high-efficiency light emission, the organic light emitting display device selects an organic layer such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer together with an organic light emitting layer between the anode electrode and the cathode electrode. It is added and used.

On the other hand, the electrodes, the organic light emitting layer and the organic layer of the organic light emitting display device can be formed in a number of ways, one of which is deposition. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

However, it is very difficult to form a fine pattern of an organic thin film such as an organic light emitting layer and an organic layer, and the organic light emitting display device because the luminous efficiency of red, green and blue varies depending on the shape and the thickness of the organic thin film. There is a limit to improving the light emission characteristics of the.

In addition, in recent years, display devices are increasingly required to be enlarged, and conventional thin film deposition apparatuses have difficulty in patterning organic thin films for large areas, and have a satisfactory driving voltage, current density, luminance, color purity, luminous efficiency, and lifetime. There is a limitation in manufacturing a large organic light emitting display device.

The present invention provides a thin film deposition apparatus and a thin film deposition apparatus manufacturing method capable of forming a precise pattern on a large substrate.

The present invention provides a deposition source, a first nozzle disposed on one side of the deposition source and having a plurality of first slits, a second nozzle disposed to face the deposition source and having a plurality of second slits, and the second nozzle. A method of manufacturing a thin film deposition apparatus having a second nozzle frame coupled to a nozzle to support the second nozzle, wherein the second nozzle frame is connected to the second nozzle frame to impart a predetermined tensile force to the second nozzle. Disclosed is a manufacturing method of a thin film deposition apparatus including the step of coupling the second nozzle.

In the present invention, after the tensile force is applied to the second nozzle and a compression force corresponding to the tensile force is applied to the second nozzle frame, after the second nozzle and the second nozzle frame are combined, the tensile force and the compression force are removed. It may include a step.

In the present invention, the second nozzle may include a plurality of sub-nozzles, and may include coupling the sub-nozzles to the second nozzle frame.

In the present invention, the coupling of the sub-nozzles to the second nozzle frame may include forming the sub-nozzles so that left and right symmetry is sequentially performed with respect to the center of the second nozzle frame by two sub-nozzles. And coupling to two nozzle frames simultaneously.

In the present invention, the second nozzle has an odd number of sub-nozzles, and the step of coupling the sub-nozzles to the second nozzle frame may include: placing a first sub-nozzle of the sub-nozzles in the center of the second nozzle frame; The sub-nozzles other than the first sub-nozzle of the sub-nozzles are coupled to the second nozzle frame so that the sub-nozzles are symmetrically left and right with respect to the first sub-nozzle sequentially. May include the step of combining at the same time.

In the present invention, the second nozzle is provided with an even number of sub-nozzles, and the step of coupling the sub-nozzles to the second nozzle frame, two sub-nozzles of the sub-nozzles in the center of the second nozzle frame The second sub-nozzles may be coupled to the second nozzle frame at the same time so as to be left and right symmetrical with respect to the center of the second nozzle frame.

In the present disclosure, the coupling of the subnozzles to the second nozzle frame may include sequentially removing the tensile force applied to the subnozzles after engaging the second nozzle frame in a state in which tensile force is applied to the subnozzles. The compression force corresponding to the tensile force applied to the sub-nozzles is applied to the second nozzle frame, and the compression force gradually decreases as the sub-nozzles are sequentially coupled to the second nozzle frame, and the sub-nozzles are all The compressive force can be removed after engaging the second nozzle frame.

In the present invention, the first compressive force applied to the second nozzle frame may correspond to the tensile force applied to tension the entire sub-nozzles.

In an embodiment of the present invention, the apparatus may further include a barrier wall assembly including a plurality of barrier walls to partition a space between the first nozzle and the second nozzle.

In the present invention, the first and second slits are arranged in one direction, and each of the plurality of barrier walls is substantially perpendicular to the one direction to partition a space between the first nozzle and the second nozzle. Forming in the phosphorus direction may include.

In the present invention, one or more first slits may be disposed between two adjacent blocking walls of the plurality of blocking walls.

In the present invention, a plurality of second slits may be disposed between two adjacent blocking walls of the plurality of blocking walls.

In the present invention, the first slits and the second slit are arranged so that the number of the second slits is larger than the number of the first slits disposed between two neighboring blocking walls among the plurality of blocking walls. Forming them may include.

The method may include forming the first slits and the second slits such that the total number of the second slits is greater than the total number of the first slits.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, the blocking walls may be formed to be spaced apart from the second nozzle.

In the present invention, the barrier wall assembly may be formed to be separated from the thin film deposition apparatus.

The present invention may further include a second blocking wall disposed on the second nozzle so as to correspond to the blocking wall and to be spaced apart from the blocking wall.

In the present invention, the plurality of first slits are formed along a first direction, the plurality of second slits are formed along a second direction perpendicular to the first direction, and the thin film deposition apparatus is a vapor deposition material. The deposition process may be performed while moving in the first direction with respect to the deposition source, and the deposition source, the first nozzle, and the second nozzle may be integrally formed.

In the present invention, the deposition source, the first nozzle and the second nozzle may be integrally formed by combining by the connecting member.

In the present invention, the connection member may guide the movement path of the deposition material accommodated in the deposition source.

In the present invention, the connection member may be formed to seal the deposition source and the space between the first nozzle and the second nozzle from the outside.

In the present invention, the deposition material may be continuously deposited on the deposition material while moving in the first direction with respect to the thin film deposition apparatus.

In the present invention, the plurality of first slits may be formed to be tilted by a predetermined angle.

In the present invention, the plurality of first slits may include two rows of first slits formed along the first direction, and the first slits of the two rows may tilt in a direction facing each other. have.

In the present invention, the plurality of first slits includes two rows of first slits formed along the first direction, and the first slits are disposed on a first side of the first slits in the two rows. The first slit is disposed to face the second side end of the second nozzle, and the first slit disposed on the second side of the two rows of first slits is disposed at the first side end of the second nozzle. Can be placed to look

In the present invention, the thin film deposition apparatus may be formed to be spaced apart from the deposition material by a predetermined degree.

In the present invention, the second nozzle may be formed smaller than the deposition material.

The method may include forming the first slits and the second slits such that the total number of the second slits is greater than the total number of the first slits.

In the present invention, the width in one direction of the second nozzle may be formed to be substantially the same as the width in one direction of the vapor deposition material to be deposited using the thin film deposition apparatus.

According to another aspect of the present invention discloses a thin film deposition apparatus manufactured by the manufacturing method of the present invention.

The thin film deposition apparatus and the thin film deposition apparatus manufacturing method according to the present invention can form a precise pattern on a large substrate.

1 is a perspective view schematically showing a thin film deposition apparatus manufactured by a method according to an embodiment of the present invention.
FIG. 2 is a schematic side view of the thin film deposition apparatus of FIG. 1.
3 is a schematic plan view of the thin film deposition apparatus of FIG. 1.
4 is a perspective view illustrating a method of coupling the second nozzle and the second nozzle frame of FIG. 1.
5A to 5D are views illustrating a method of manufacturing a thin film deposition apparatus according to another exemplary embodiment of the present invention, and sequentially illustrate a method of combining the second nozzle and the second nozzle frame.
6 is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus of FIG. 1 of the present invention.
FIG. 7 is a view schematically showing a deposition state using a thin film deposition apparatus manufactured by a method according to another embodiment of the present invention.
8 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
9 is a schematic side view of the thin film deposition apparatus of FIG. 8.
FIG. 10 is a schematic plan view of the thin film deposition apparatus of FIG. 8.
11 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
12 is a view schematically illustrating a distribution form of a deposited film deposited on a substrate when the first slit is not tilted in the thin film deposition apparatus according to the present invention.
FIG. 13 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the first slit is tilted in the thin film deposition apparatus according to the present invention.

Hereinafter, with reference to the embodiments of the present invention shown in the accompanying drawings will be described in detail the configuration and operation of the present invention.

1 is a perspective view schematically showing a thin film deposition apparatus manufactured by a method according to an embodiment of the present invention, FIG. 2 is a schematic side view of the thin film deposition apparatus of FIG. 1, and FIG. 3 is a thin film deposition apparatus of FIG. 1. A schematic plan view of the device.

1, 2, and 3, the thin film deposition apparatus 100 manufactured by the method according to an embodiment of the present invention may include a deposition source 110 and a first source for depositing a deposition material on the substrate 160. And a first nozzle 120, a barrier wall assembly 130, a second nozzle 150, and a second nozzle frame 155.

1, 2 and 3 are not shown in the chamber for convenience of description, it is preferable that all the configurations of FIGS. 1 to 3 are arranged in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the first nozzle 120 and the second nozzle 150 to be deposited on the substrate 160 in a desired pattern, a chamber (not shown) is basically provided. The inside must maintain the same high vacuum as the FMM deposition method. In addition, when the temperature of the barrier wall 131 and the second nozzle 150 is sufficiently lower than the deposition source 110 temperature (about 100 ° C. or less), the space between the first nozzle 120 and the second nozzle 150 is maintained in a high vacuum state. Can be maintained. As such, when the temperatures of the barrier wall assembly 130 and the second nozzle 120 are sufficiently low, all of the deposition material 115 radiated in an undesired direction may be adsorbed onto the barrier wall assembly 130 to maintain high vacuum. Since the collision between the deposition materials does not occur, the straightness of the deposition materials can be secured.

In this case, the barrier wall assembly 130 faces the high temperature deposition source 110, and the temperature closes up to about 167 ° C. in the vicinity of the deposition source 110, and thus, a partial cooling device may be further provided if necessary. To this end, a cooling member may be formed in the barrier wall assembly 130.

In the chamber (not shown), a substrate 160 that is a deposition material is disposed. The substrate 160 may be a substrate for a flat panel display device, and a large area substrate such as a mother glass capable of forming a plurality of flat panel display devices may be applied.

On the side opposite to the substrate 160 in the chamber, a deposition source 110 in which the deposition material 115 is received and heated is disposed. As the deposition material 115 stored in the deposition source 110 is vaporized, deposition is performed on the substrate 160.

In detail, the deposition source 110 includes the crucible 111 filled with the deposition material 115 therein, and the deposition material 115 filled inside the crucible 111 by heating the crucible 111. One side, in detail, comprises a heater 112 for evaporating to the first nozzle 120 side.

The first nozzle 120 is disposed on one side of the deposition source 110, in detail, the side facing the substrate 160 from the deposition source 110. In addition, a plurality of first slits 121 are formed in the first nozzle 120 along the Y-axis direction. Here, the plurality of first slits 121 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and is directed toward the substrate 160, which is a deposition material.

One side of the first nozzle 120 is provided with a barrier wall assembly 130. The barrier wall assembly 130 includes a plurality of barrier walls 131 and a barrier wall frame 132 disposed outside the barrier walls 131. Here, the plurality of blocking walls 131 may be provided in parallel with each other along the Y-axis direction. The plurality of blocking walls 131 may be formed at equal intervals. In addition, each blocking wall 131 is formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction. The plurality of blocking walls 131 arranged as described above serve to partition a space between the first nozzle 120 and the second nozzle 150 to be described later.

Here, the thin film deposition apparatus 100 is characterized in that the deposition space is separated for each first slit 121 to which the deposition material is sprayed by the blocking wall 131.

Here, each of the blocking walls 131 may be disposed between the first slits 121 adjacent to each other. In other words, it may be regarded that one first slit 121 is disposed between two blocking walls 131 neighboring each other.

Preferably, the first slit 121 may be located at the center of the barrier wall 131 adjacent to each other. As such, the barrier wall 131 partitions a space between the first nozzle 120 and the second nozzle 150, which will be described later, so that the deposition material discharged to the first slit 121 is separated from the first slit ( It is not mixed with the deposition materials discharged from 121, but is deposited on the substrate 160 through the second slit 151. In other words, the blocking walls 131 guide the movement path in the Y-axis direction of the deposition material so that the deposition material discharged through the first slit 121 is not dispersed.

Meanwhile, a barrier wall frame 132 may be further provided outside the plurality of barrier walls 131. The barrier wall frame 132 is provided on the upper and lower surfaces of the plurality of barrier walls 131, respectively, and supports the positions of the barrier walls 131 and at the same time, the deposition material is discharged through the first slit 121. It serves to guide the movement path in the Z-axis direction of the deposition material so that this is not dispersed.

Meanwhile, the barrier wall assembly 130 may be formed to be separated from the thin film deposition apparatus 100. In detail, the conventional FMM deposition method has a problem that the deposition efficiency is low. Here, the deposition efficiency refers to the ratio of the material vaporized on the substrate among the vaporized material in the deposition source, the deposition efficiency in the conventional FMM deposition method is about 32%. Moreover, in the conventional FMM deposition method, since about 68% of organic matter which is not used for deposition is deposited everywhere in the evaporator, there is a problem that its recycling is not easy.

In order to solve such a problem, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, since the deposition space is separated from the external space by using the barrier wall assembly 130, it is not deposited on the substrate 160. Deposition materials are mostly deposited within the barrier wall assembly 130. Therefore, after a long time deposition, when a large amount of deposition material is accumulated in the barrier wall assembly 130, the barrier wall assembly 130 is separated from the thin film deposition apparatus 100, and then put into a separate deposition material recycling apparatus to recover the deposition material. can do. Through such a configuration, it is possible to obtain an effect of improving deposition efficiency and reducing manufacturing cost by increasing deposition material recycling rate.

A second nozzle 150 and a second nozzle frame 155 are further provided between the deposition source 110 and the substrate 160. The second nozzle frame 155 is formed in a lattice form, such as a window frame, and the second nozzle 150 is coupled to the inside thereof. In addition, a plurality of second slits 151 are formed in the second nozzle 150 along the Y-axis direction. Here, the plurality of second slits 151 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and the second nozzle 150 and is directed toward the substrate 160, which is a deposition material.

Here, it is preferable that the total number of the second slits 151 is larger than the total number of the first slits 121. In addition, it is preferable that the number of the second slits 151 is larger than the number of the first slits 121 disposed between the two blocking walls 131 adjacent to each other.

 That is, one or more first slits 121 are disposed between two blocking walls 131 neighboring each other. At the same time, a plurality of second slits 151 are disposed between two blocking walls 131 neighboring each other. In addition, the space between the first nozzle 120 and the second nozzle 150 is divided by two blocking walls 131 adjacent to each other, so that the deposition space is separated for each first slit 121. Therefore, the deposition material radiated from one first slit 121 is to be deposited on the substrate 160 through most of the second slits 151 in the same deposition space.

The second nozzle 150 may be manufactured by etching, which is the same method as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM also needs to be enlarged. Therefore, there is a problem in that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern.

However, in the case of the thin film deposition apparatus 100 manufactured by the method according to the present embodiment, the deposition is performed while the thin film deposition apparatus 100 moves in the Z-axis direction in a chamber (not shown). In other words, when the thin film deposition apparatus 100 completes the deposition at the current position, the thin film deposition apparatus 100 or the substrate 160 is moved relatively in the Z-axis direction to continuously perform deposition.

Accordingly, the thin film deposition apparatus 100 may make the second nozzle 150 much smaller than the conventional FMM. That is, in the case of the thin film deposition apparatus 100 of the present invention, when the width in the Y-axis direction of the second nozzle 150 and the width in the Y-axis direction of the substrate 160 are the same, the second nozzle 150 may be formed. The length of the Z-axis direction may be formed smaller than the length of the substrate 160. Thus, since the second nozzle 150 can be made much smaller than the conventional FMM, the second nozzle 150 of the present invention is easy to manufacture. That is, in all processes, such as etching operations of the second nozzle 150, precision tension and welding operations, moving and cleaning operations thereafter, the small size of the second nozzle 150 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

On the other hand, the above-described barrier wall assembly 130 and the second nozzle 150 may be formed to be spaced apart from each other to some extent. The reason for separating the barrier wall assembly 130 and the second nozzle 150 from each other is as follows.

First, the second nozzle 150 and the second nozzle frame 155 should be aligned with a precise position and a gap Gap on the substrate 160, that is, a part requiring high precision control. Therefore, in order to facilitate the control by lightening the weight of the portion requiring high precision, the deposition source 110, the first nozzle 120, and the barrier wall assembly 130, which require no precision control and are expensive, are prepared. It is separated from the two nozzles 150 and the second nozzle frame 155. Next, since the temperature of the barrier wall assembly 130 is increased by at least 100 degrees by the deposition source 110 in a high temperature state, the temperature of the elevated barrier wall assembly 130 is not conducted to the second nozzle 150. In order to prevent the barrier wall assembly 130 and the second nozzle 150 to be separated. Next, in the thin film deposition apparatus 100 of the present invention, the deposition material attached to the barrier wall assembly 130 may be mainly recycled, and the deposition material attached to the second nozzle 150 may not be recycled. Therefore, when the barrier wall assembly 130 is separated from the second nozzle 150, the recycling of the deposition material may be easily performed. In addition, a compensation plate (not shown) may be further provided to secure the film uniformity of the entire substrate 160. When the blocking wall 131 is separated from the second nozzle 150, it is difficult to install a correction plate (not shown). Very easy.

4 is a perspective view illustrating a method of coupling the second nozzle and the second nozzle frame of FIG. 1.

Referring to FIG. 4, the second nozzle frame 155 is formed in a lattice shape, such as a window frame, and a second nozzle 150 having a plurality of second slits 151 formed therein is coupled thereto. Here, when the second nozzle 150 and the second nozzle frame 155 are combined, the second nozzle frame 155 may be provided with a compressive force, and the second nozzle 150 may be provided with a predetermined tensile force. The two nozzles 150 and the second nozzle frame 155 are combined.

In detail, the precision of the second nozzle 150 may be divided into a manufacturing error of the second nozzle 150 and an error due to thermal expansion of the second nozzle 150 during deposition. Here, in order to minimize the manufacturing error of the second nozzle 150, a counter force technique may be applied.

This will be described in more detail as follows. First, as shown in FIG. 4, the second nozzle 150 is pressed from the inside to the outside to tension the second nozzle 150. Next, a compressive force is applied to the second nozzle frame 155 in a direction corresponding to the pressing force applied to the second nozzle 150, that is, in an opposite direction, to be in equilibrium with an external force applied to the second nozzle 150. . Next, the second nozzle 150 is coupled to the second nozzle frame 155 by welding the edge of the second nozzle 150 to the second nozzle frame 155. Finally, when the external force acting to balance the second nozzle 150 and the second nozzle frame 155 is removed, a tensile force is applied to the second nozzle 150 by the second nozzle frame 155. Using such a precision tensile / compression / welding technique, the manufacturing error of the second nozzle 150 can be manufactured to 2 μm or less even if there is an etching dispersion.

Since the tensile force acts on the second nozzle 150 as described above, the second nozzle 150 is designed and manufactured to be smaller than a predetermined size in consideration of the degree of tension during design and manufacture. Preferably, the second nozzle 150 is formed to a size of 0.02% to 0.1% smaller than the predetermined size.

5A to 5D are views illustrating a method of manufacturing a thin film deposition apparatus according to another exemplary embodiment of the present invention, and sequentially illustrate a method of combining the second nozzle and the second nozzle frame.

This embodiment has a different coupling relationship between the second nozzle 250 and the second nozzle frame 255 as compared with the above-described embodiment. In detail, the second nozzle 250 of the present exemplary embodiment is not formed as a single structure and includes a plurality of sub nozzles. The second nozzle 250 includes a first sub nozzle 250A, two second sub nozzles 250B, and two third sub nozzles 250C. For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

Referring to FIG. 5A, a second nozzle frame 255 is prepared, and a first sub-nozzle 250A is disposed at the center of the second nozzle frame 255. The first sub-nozzle 250A is a partial nozzle included in the second nozzle 250 and includes a plurality of second slits 251A. Although FIG. 5A illustrates a second nozzle frame 255 having a smooth curved shape, a rectangular second nozzle frame 155 as shown in FIG. 1 may be applied.

Tensile force T1 is applied to the first sub-nozzle 250A in both up and down directions. Various methods may be used to apply the tensile force T1, and a tensile force may be applied while clamps (not shown) are fixed to both ends of the first sub-nozzle 250A. Figure 5a is shown to apply a tensile force in four directions in each of the upper and lower directions, which can be implemented by disposing four clamps, respectively. However, the number of points at which tension is applied varies. That is, the number of points to which the tensile force is applied may be variously applied simply by applying the same tensile force at the same number and at the same point in each of the upper and lower directions of the first sub-nozzle 250A.

At this time, the compression force CF1 is applied to the second nozzle frame 255. The compressive force CF1 applied to the second nozzle frame 255 is in equilibrium with the tensile force applied simultaneously to both the first sub-nozzle 250A and the second sub-nozzle 250B and the third sub-nozzle 250C to be described later. . That is, the compression force CF1 is a magnitude corresponding to the tensile force applied in a state where all the sub-nozzles constituting the second nozzle 250 all correspond to the second nozzle frame 255. This prevents deformation of the second nozzle frame 255 during and after the sub-nozzles are sequentially coupled to the second nozzle frame 255.

In FIG. 5A, a compressive force is applied to the second nozzle frame 255 in one up and down direction. However, the present invention is not limited thereto. That is, if the amount of compression force applied in each of the upper and lower directions is the same, the number of points to which the compression force is applied may be variously applied.

5B, the first sub-nozzle 250A is coupled to the second nozzle frame 255. The joining method may vary, and in particular, it is preferable to use a welding method. The first sub-nozzle 250A is coupled to the second nozzle frame 255 by the weld 252A. After the first sub-nozzle 250A is coupled to the second nozzle frame 255, the tensile force T1 applied to the first sub-nozzle 250A is removed.

The compression force CF1 applied to the second nozzle frame 255 is not completely removed, and thus the compression force CF2 of a smaller magnitude is maintained. Two second sub-nozzles 250B are disposed to be symmetrical with respect to the first sub-nozzle 250A. The second sub-nozzles 250B each have a plurality of second slits 251B.

Tensile force T2 is applied to the two second sub-nozzles 250B in the up and down directions, respectively. Various methods may be used to apply the tensile force T2, and a tensile force may be applied while clamps (not shown) are fixed to both ends of the second sub-nozzles 250B. In FIG. 5B, tensile force is applied in five directions in each of the upper and lower directions of each of the second sub-nozzles 250B, which may be implemented by arranging five clamps, respectively. However, the number of points at which tension is applied varies. That is, the number of points to which the tensile force is applied may be variously applied only by applying the same tensile force at the same point in the same number in the upper and lower directions of the second sub-nozzle 250B.

At this time, the compression force CF2 is applied to the second nozzle frame 255. Since the first sub-nozzle 250A is already coupled to the second nozzle frame 255, the second nozzle has a compression force CF2 smaller than the initial compression force CF1 while removing the tensile force applied to the first sub-nozzle 250A. To be applied to frame 255.

In FIG. 5B, a compressive force is applied to the second nozzle frame 255 in one direction of up and down. However, the present invention is not limited thereto. That is, if the magnitude of the compressive force applied in each of the upper and lower directions is the same, the number of points applying the compressive force to the second nozzle frame 255 may be variously applied.

5C, the second sub-nozzle 250B is coupled to the second nozzle frame 255. The coupling method may vary, and it is preferable to use a welding method specifically. The second sub-nozzle 250B is coupled to the second nozzle frame 255 by the weld 252B. After the second sub-nozzle 250B is coupled to the second nozzle frame 255, the tensile force T2 applied to the second sub-nozzle 250B is removed.

The compression force CF2 applied to the second nozzle frame 255 is not completely removed, and thus the compression force CF3 of a smaller magnitude is maintained. Two third sub-nozzles 250C are disposed on the side surfaces of the second sub-nozzle 250B so as to be left-right symmetrical with respect to the first sub-nozzle 250A. Each of the third sub-nozzles 250C includes a plurality of second slits 251C.

Tensile force T3 is applied to the two third sub-nozzles 250C in the up and down directions, respectively. Various methods may be used to apply the tensile force T3, and a tensile force may be applied while clamps (not shown) are fixed to both ends of the third sub-nozzles 250C. In FIG. 5C, the tensile force is applied in five directions in each of the upper and lower directions of each of the third sub-nozzles 250C, which may be implemented by arranging five clamps, respectively. However, the number of points at which tension is applied varies. That is, the number of points to which the tensile force is applied may be variously applied simply by applying the same tensile force at the same point in the same number in the upper and lower directions of the third sub-nozzle 250C.

At this time, the compression force CF3 is applied to the third nozzle frame 255. Since the first sub-nozzle 250A and the second sub-nozzle 250B are already coupled to the second nozzle frame 255, the previous compression force CF2 is removed while the tension force T2 applied to the second sub-nozzle 250B is removed. A compression force CF3 smaller than) is applied to the second nozzle frame 255.

In FIG. 5C, a compressive force is applied to the second nozzle frame 255 in one up and down direction. However, the present invention is not limited thereto. That is, if the magnitude of the compressive force applied in each of the up and down directions is the same, and the magnitude of the force applied to the second nozzle frame 255 is the same, the number of points to which the compressive force is applied may be variously determined.

Then, referring to FIG. 5D, the third sub-nozzle 250C is coupled to the second nozzle frame 255. The joining method may vary, and in particular, it is preferable to use a welding method. The third sub-nozzle 250C is coupled to the second nozzle frame 255 by the weld 252C. After the third sub-nozzle 250C is coupled to the second nozzle frame 255, the tensile force T3 applied to the third sub-nozzle 250C is removed.

The tensile force T3 applied to the third sub-nozzle 250C is removed and the compression force CF3 applied to the second nozzle frame 255 is removed.

As described above, the process of coupling the five sub-nozzles 250A, 250B, and 250C to the second nozzle frame 255 is illustrated in FIGS. 5A through 5D. The first sub-nozzle 250A is first coupled to the center of the second nozzle frame 255, and then the second sub-nozzle 250B is coupled to be symmetric about the first sub-nozzle 250A. Next, two third sub-nozzles 250C are coupled to the side of the second sub-nozzle 250B and the second nozzle frame 255 so as to be symmetric about the first sub-nozzle 250A. This prevents the left and right deformation amounts from being different in the longitudinal direction of the second nozzle frame 255.

In addition, in the present embodiment, as shown in FIG. 4, a counter force technique is used. Specifically, the first sub-nozzle 250A, the second sub-nozzle 250B, and the third sub-nozzle 250C are sequentially arranged in the second nozzle frame. When combined with 255, the magnitude of the compressive force applied to the second nozzle frame 255 becomes smaller. The compression force is controlled to be gradually reduced to effectively prevent deformation of the second nozzle frame 255 during and after joining the plurality of subnozzles 250A, 250B, 250C to the second nozzle frame 255.

Even when the plurality of sub-nozzles are coupled to the second nozzle frame 255, deformation of the sub-nozzles and the second nozzle frame 255 may be prevented by using a counter force technique.

In addition, although the process of coupling the five sub-nozzles to the second nozzle frame 255 is illustrated in FIGS. 5A to 5D, more sub-nozzles may be combined. In this case, when the even number of sub-nozzles are coupled to the second nozzle frame 255, the two sub-nozzles are first combined at the center of the second nozzle frame 255, and the remaining sub-nozzles are sequentially symmetrically coupled to each other. do.

5A to 5D, the second sub-nozzle 250B and the third sub-nozzle are moved away from the position close to the first sub-nozzle 250A with respect to the center of the first sub-nozzle 250A disposed at the center. Although the process of combining the 250C) to the second nozzle frame 255 is shown in sequence, the second part is located closer to the position farther from the first sub-nozzle 250A based on the center of the first sub-nozzle 250A. The nozzle 250B and the third sub-nozzle 250C may be sequentially coupled to the second nozzle frame 255. In other words, when the sub-nozzles are coupled to the second nozzle frame 255, the sub-nozzles may be arranged to have left and right symmetry based on the length direction of the second nozzle frame 255. It is possible.

On the other hand, in the thin film deposition apparatus 100 according to an embodiment of the present invention, it is characterized in that the temperature of the second nozzle frame 155 is kept constant. In detail, since the second nozzle 150 continuously looks at the high temperature deposition source 110 in the present invention, the temperature is raised to a certain degree (about 5 to 15 ° C.) because it is always radiated. As described above, when the temperature of the second nozzle 150 rises, the second nozzle 150 may expand to reduce pattern accuracy. In order to solve such a problem, in the present invention, the temperature of the second nozzle frame 155 that uses the stripe type second nozzle 150 and holds the second nozzle 150 in a tensioned state. By making it uniform, the pattern error by the temperature rise of the 2nd nozzle 150 is prevented.

In this case, since the thermal expansion (pattern error) in the horizontal direction (Y-axis direction) of the second nozzle 150 is determined by the temperature of the second nozzle frame 155, only the temperature of the second nozzle frame 155 is constant. Even if the temperature of the second nozzle 150 increases, the pattern error problem due to thermal expansion does not occur. On the other hand, thermal expansion in the longitudinal direction (Z-axis direction) of the second nozzle 150 exists, but this is a scanning direction and thus has no relation to pattern accuracy.

In this case, since the second nozzle frame 155 does not directly look at the deposition source 110 in a vacuum state, it does not receive radiant heat, and since the second nozzle frame 155 is not connected to the deposition source 110, the second nozzle frame 155 has no thermal conductivity. There is little room for the temperature to rise. If there is a problem of slight temperature rise (1 to 3 ° C), it is possible to easily maintain a constant temperature by using a thermal shield or a radiation pin.

As described above, the second nozzle frame 155 imparts a predetermined tensile force to the second nozzle 150, and the temperature of the second nozzle frame 155 is kept constant, thereby thermal expansion of the second nozzle 150. The problem and the pattern precision problem of the 2nd nozzle 150 are isolate | separated, and the effect which the pattern precision of the 2nd nozzle 150 improves can be acquired. That is, as described above, when the precision tension / compression / welding technique is used, the manufacturing error of the second nozzle 150 may be 2 μm or less even if there is an etching dispersion. In addition, the error due to thermal expansion due to the temperature rise of the second nozzle 150 is applied by applying a tensile force to the stripe type second nozzle 150 and making the temperature of the second nozzle frame 155 constant. Does not occur. Therefore, it can be seen that the precision of the second nozzle 150 can be manufactured by {second nozzle manufacturing error (<2) + second nozzle thermal expansion error (˜0) <2 um}.

6 is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus of FIG. 1 of the present invention. For convenience of description, a process of depositing a thin film deposition apparatus including a plurality of sub-nozzles illustrated in FIGS. 5A to 5D is not illustrated.

Referring to FIG. 6, the deposition material vaporized from the deposition source 110 is deposited on the substrate 160 through the first nozzle 120 and the second nozzle 150. At this time, since the space between the first nozzle 120 and the second nozzle 150 is partitioned by the blocking walls 131, the deposition from the respective first slits 121 of the first nozzle 120 is deposited. The material is not mixed with the deposition material from the other first slits by the barrier wall 131.

The space between the first nozzle 120 and the second nozzle 150 is partitioned by the blocking walls 131. The gap between the adjacent blocking walls 131 is adjusted to adjust the distance between the adjacent nozzles 131 and the second nozzle. The angle between 150 can be controlled. That is, as the distance between the blocking walls 131 is reduced, the deposition materials are deposited on the substrate 160 through the second nozzle 150 at an angle close to the vertical.

In addition, as the distance between the blocking walls 131 is increased, the angle between the movement path of the deposition materials and the second nozzle 150 becomes smaller.

According to the present invention as described above, an effect of preventing a defect due to contact between the substrate and the mask can be obtained. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

FIG. 7 is a view schematically showing a deposition state using a thin film deposition apparatus manufactured by a method according to another embodiment of the present invention. For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

The thin film deposition apparatus 300 illustrated in FIG. 7 includes a deposition source 310, a first nozzle 320, a blocking wall 331, a second nozzle 350, and a second nozzle frame 355. The deposition material vaporized in the circle 310 is deposited on the substrate 360 through the first nozzle 320 and the second nozzle 350. At this time, the space between the first nozzle 320 and the second nozzle 350 is partitioned by the blocking walls 331.

In addition, a second blocking wall 356 is disposed on the second nozzle 350 so as to correspond to each blocking wall 331. The second blocking wall 356 is spaced apart from the blocking wall 331. The deposition material from each of the first slits 321 of the first nozzle 320 through the second barrier wall 356 is not mixed with the deposition material from another first slit to improve deposition characteristics. The second barrier wall 356 is also formed to be detachable from the deposition apparatus. Part of the deposition material that is not deposited on the substrate 360 is accumulated on the second blocking wall 356. The second blocking wall 356 may be separated to collect and recycle the deposition material accumulated on the second blocking wall 356. have.

8 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention, FIG. 9 is a schematic side view of the thin film deposition apparatus of FIG. 8, and FIG. 10 is a schematic view of the thin film deposition apparatus of FIG. 8. Top view. For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

8 to 10, the thin film deposition apparatus 500 may include a deposition source 510, a first nozzle 520, a second nozzle 550, and a second nozzle to deposit a deposition material on a substrate 400. Frame 555.

Here, although the chamber is not shown in FIGS. 8 to 10 for convenience of description, all the components of FIGS. 8 to 10 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 515 emitted from the deposition source 510 to pass through the first nozzle 520 and the second nozzle 550 to be deposited on the substrate 400 in a desired pattern, a chamber (not shown) is basically provided. The inside must maintain the same high vacuum as the FMM deposition method. In addition, the temperature of the second nozzle 550 should be sufficiently lower than the deposition source 510 temperature (about 100 ° C. or less). This is because the problem of thermal expansion of the second nozzle 550 due to the temperature can be minimized only when the temperature of the second nozzle 550 is sufficiently low.

In such a chamber (not shown), a substrate 400 which is a deposition material is disposed. The substrate 400 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

In the present embodiment, the substrate 400 is characterized in that the deposition proceeds while moving relative to the thin film deposition apparatus 500. In other words, the substrate 400 disposed to face the thin film deposition apparatus 100 moves continuously along the Y-axis direction to continuously perform deposition. That is, deposition is performed in a scanning manner while the substrate 400 moves in the direction of arrow A in FIG. 8. Here, although the substrate 400 is shown to be deposited while moving in the Y-axis direction in the chamber (not shown), the spirit of the present invention is not limited thereto, the substrate 400 is fixed and thin film deposition It will also be possible for the device 500 itself to perform deposition while moving in the Y-axis direction.

Therefore, in the thin film deposition apparatus 500 of the present embodiment, the second nozzle 550 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition apparatus 100 of the present embodiment, since the substrate 400 moves in the Y-axis direction and performs deposition in a continuous manner, that is, scanning, the X of the second nozzle 550 The length in the axial direction and the Y-axis direction may be formed to be much smaller than the length of the substrate 400. Thus, since the second nozzle 550 can be made much smaller than the conventional FMM, the second nozzle 550 of the present invention is easy to manufacture. That is, in all processes, such as etching of the second nozzle 550, precision tension and welding operations thereafter, and moving and cleaning operations, the small size of the second nozzle 550 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

As described above, in order for deposition to occur while the thin film deposition apparatus 500 and the substrate 400 move relative to each other, it is preferable that the thin film deposition apparatus 500 and the substrate 400 are spaced to some extent.

Meanwhile, a deposition source 510 in which the deposition material 515 is received and heated is disposed on the side of the chamber that faces the substrate 400. The deposition source 510 includes a crucible 511 filled with a deposition material 515 therein and a heater 512 for heating the crucible 511.

The first nozzle 520 is disposed on one side of the deposition source 510, specifically, on the side of the deposition source 510 facing the substrate 400. In addition, a plurality of first slits 521 are formed in the first nozzle 520 along the Y-axis direction, that is, the scan direction of the substrate 400. Here, the plurality of first slits 521 may be formed at equal intervals. The deposition material 515 vaporized in the deposition source 510 passes through the first nozzle 520 and is directed toward the substrate 400, which is a deposition material. As such, when the plurality of first slits 521 are formed in the first nozzle 520 along the Y-axis direction, that is, the scanning direction of the substrate 400, each second slit 551 of the second nozzle 550 is formed. Since the size of the pattern formed by the deposition material passing through is affected by only one size of the first slit 521 (that is, there is only one first slit 521 in the X-axis direction). ), Shadows will not occur. In addition, since the plurality of first slits 521 exist in the scanning direction, even if a flux difference between individual first slits 521 occurs, the difference is canceled to obtain an effect of maintaining a uniform deposition uniformity. have.

The second nozzle 550 and the second nozzle frame 555 are disposed between the deposition source 510 and the substrate 400. The second nozzle frame 555 is formed in a substantially window-like shape, and the second nozzle 550 is coupled to the inside thereof. A plurality of second slits 551 are formed in the second nozzle 550 along the X axis direction. The deposition material 515 vaporized in the deposition source 510 passes through the first nozzle 520 and the second nozzle 550 and is directed toward the substrate 400, which is a deposition material. In this case, the second nozzle 550 may be manufactured by etching, which is the same as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, the total number of second slits 551 may be greater than the total number of first slits 521.

When the second nozzle 550 and the second nozzle frame 555 are coupled to each other, the second nozzle frame 155 may provide a compressive force to the second nozzle frame 155, and may impart a predetermined tensile force to the second nozzle 550. 550 and the second nozzle frame 555 are coupled. Since the method of coupling the second nozzle 555 and the second nozzle frame 555 is the same as that shown in FIG. 4, the detailed description thereof will be omitted.

In addition, the thin film deposition apparatus 500 of the present embodiment can be applied to the configuration shown in Figs. 5A to 5D. In other words, the second nozzle 550 may include a plurality of sub-nozzles. Since the details are the same as those described above, they will be omitted.

Meanwhile, the deposition source 510 (and the first nozzle 520 coupled thereto) and the second nozzle 550 may be formed to be spaced apart from each other to some extent, and the deposition source 510 (and the first nozzle coupled thereto). 520) and the second nozzle 550 may be connected to each other by the connecting member 535. That is, the deposition source 510, the first nozzle 520, and the second nozzle 550 may be connected by the connection member 535 to be integrally formed with each other. The connection member 535 may guide the movement path of the deposition material so that the deposition material discharged through the first slit 521 is not dispersed. In the drawing, the connecting member 535 is formed only in the left and right directions of the deposition source 510, the first nozzle 520, and the second nozzle 550 to guide only the X-axis direction of the deposition material. For convenience of the present invention, the spirit of the present invention is not limited thereto, and the connection member 535 may be formed in a sealed shape in a box shape to simultaneously guide the movement of the deposition material in the X-axis direction and the Y-axis direction.

As described above, the thin film deposition apparatus 500 according to the exemplary embodiment of the present invention performs deposition while moving relative to the substrate 400, and thus the thin film deposition apparatus 500 with respect to the substrate 400. In order to move relatively, the second nozzle 550 is formed to be spaced apart from the substrate 400 to some extent.

In the conventional FMM deposition method, the deposition process was performed by bringing a mask into close contact with the substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device is enlarged, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition apparatus 500 of the present embodiment, the second nozzle 550 is disposed to be spaced apart from the substrate 400 which is a deposition material at a predetermined interval.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

11 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention. Referring to the drawings, the thin film deposition apparatus 600 includes a deposition source 610, a first nozzle 620, a second nozzle 650, and a second nozzle frame 655. Here, the deposition source 610 includes a crucible 611 filled with a deposition material 615 therein, and a heater 612 for heating the crucible 611. Meanwhile, a first nozzle 620 is disposed at one side of the deposition source 610, and a plurality of first slits 621 are formed in the first nozzle 620 along the Y-axis direction. Meanwhile, a second nozzle 650 and a second nozzle frame 655 are further provided between the deposition source 610 and the substrate 400, and the second nozzle 650 has a plurality of second slits along the X-axis direction. 651s are formed. In addition, the deposition source 610, the first nozzle 620, and the second nozzle 650 are coupled by the connecting member 635.

The second nozzle 650 is supported by the second nozzle frame 655. When the second nozzle 650 and the second nozzle frame 655 are coupled to each other, the second nozzle frame 655 may be provided with a compressive force, and a second tensile force may be applied to the second nozzle 650. 650 and the second nozzle frame 655 is coupled. Since the method of coupling the second nozzle 655 and the second nozzle frame 655 is the same as that shown in FIG. 4, the detailed description thereof will be omitted.

In addition, the thin film deposition apparatus 600 of the present embodiment can be applied to the configuration shown in Figs. 5A to 5D. That is, the second nozzle 650 may be provided with a plurality of secondary nozzles. Since the details are the same as those described above, they will be omitted.

The thin film deposition apparatus 600 of the present exemplary embodiment is distinguished from the above-described embodiments in that a plurality of first slits 621 formed in the first nozzle 620 are disposed at a predetermined angle. In detail, the first slit 621 may be composed of two rows of first slits 621a and 621b, and the two rows of first slits 621a and 621b are alternately disposed. In this case, the first slits 621a and 621b may be formed to be tilted so as to be inclined by a predetermined angle on the XZ plane.

Here, the first slits 621a in the first row are tilted to look at the first slits 621b in the second row, and the first slits 621b in the second row are tilted to look at the first slits 621a in the first row. Can be. In other words, the first slits 621a disposed in the left column are disposed to face the right end of the second nozzle 650, and the first slits 621b disposed in the right column have the left end of the second nozzle 650. It can be arranged to look at.

12 is a view schematically showing a distribution form of a deposited film deposited on a substrate when the first slit is not tilted in the thin film deposition apparatus according to the present invention, and FIG. 13 is a view illustrating the first slit in the thin film deposition apparatus according to the present invention. It is a figure which shows the distribution form of the vapor deposition film deposited on a board | substrate when tilting. 12 and 13, when the first slit is tilted, the thickness of the deposited film formed on both ends of the substrate is relatively increased, thereby increasing the uniformity of the deposited film.

By such a configuration, the difference in film thickness at the center and the end of the substrate is reduced, so that the deposition amount can be controlled so that the thickness of the entire deposition material is uniform, and further, the material utilization efficiency can be increased. .

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100, 300, 500, 600: thin film deposition apparatus
110, 310, 510, 610: deposition source
120, 520, and 620: first nozzle 130: barrier wall assembly
131, 331: barrier wall 132: barrier wall frame
150, 250, 550, 650: second nozzle 250A, 250B, 250C: buzzle
155, 255, 555, 655: second nozzle frame
356: second barrier wall
160, 360, 400: substrate

Claims (30)

A deposition source, a first nozzle disposed on one side of the deposition source and having a plurality of first slits, a second nozzle disposed to face the deposition source and having a plurality of second slits, coupled to the second nozzle In the manufacturing method of the thin film deposition apparatus provided with the 2nd nozzle frame which supports the said 2nd nozzle,
The second nozzle frame includes coupling the second nozzle frame and the second nozzle to impart a predetermined tensile force to the second nozzle,
And the second nozzle comprises a plurality of sub-nozzles, and coupling the sub-nozzles to the second nozzle frame. The method according to claim 1,
Removing the tensile force and the compressive force after applying the tensile force to the second nozzle and combining the second nozzle and the second nozzle frame in a state in which a compressive force corresponding to the tensile force is applied to the second nozzle frame. Thin film deposition apparatus manufacturing method. delete The method according to claim 1,
Coupling the sub-nozzles to the second nozzle frame,
And simultaneously coupling two sub-nozzles of the sub-nozzles to the second nozzle frame such that the two sub-nozzles are sequentially symmetrical with respect to the center of the second nozzle frame. The method according to claim 1,
The second nozzle has an odd number of negative nozzles,
Coupling the sub-nozzles to the second nozzle frame,
The first one of the sub-nozzles is coupled to the center of the second nozzle frame, and the remaining sub-nozzles other than the first sub-nozzle among the sub-nozzles are sequentially arranged with two sub-nozzles at a time. Bonding to the second nozzle frame at the same time so as to be left, right symmetrical with respect to one secondary nozzle. The method according to claim 1,
The second nozzle has an even number of negative nozzles,
Coupling the sub-nozzles to the second nozzle frame,
Two sub-nozzles of the sub-nozzles are coupled to the center of the second nozzle frame, and the remaining sub-nozzles are symmetrically left and right with respect to the center of the second nozzle frame, two sub-nozzles at a time. And simultaneously coupling to the second nozzle frame so as to be performed. The method according to claim 1,
Coupling the sub-nozzles to the second nozzle frame,
After being coupled to the second nozzle frame in a state in which tension is applied to the sub-nozzles sequentially, the tensile force applied to the sub-nozzles is sequentially removed, and a compression force corresponding to the tensile force applied to the sub-nozzles is applied to the second nozzle frame. And the compressive force gradually decreases as the sub-nozzles are sequentially coupled to the second nozzle frame, and the compressive force is removed after all of the sub-nozzles have joined to the second nozzle frame. The method of claim 6,
And a first compressive force applied to the second nozzle frame corresponds to a tensile force applied to tension the entire sub-nozzles. The method according to claim 1,
And a barrier wall assembly having a plurality of barrier walls to partition a space between the first nozzle and the second nozzle. 10. The method of claim 9,
Arranging the first slit and the second slit in one direction;
And forming each of the plurality of blocking walls in a direction perpendicular to the one direction to partition a space between the first nozzle and the second nozzle. 10. The method of claim 9,
And at least one of the first slits is disposed between two neighboring blocking walls among the plurality of blocking walls. 10. The method of claim 9,
And a plurality of second slits disposed between two neighboring blocking walls among the plurality of blocking walls. 10. The method of claim 9,
Forming the first slits and the second slits such that the number of the second slits is larger than the number of the first slits disposed between two neighboring blocking walls among the plurality of blocking walls. Thin film deposition apparatus manufacturing method comprising a. 10. The method of claim 9,
The thin film deposition apparatus manufacturing method of arranging the plurality of blocking walls at equal intervals. 10. The method of claim 9,
And depositing the barrier walls and the second nozzle so as to be spaced apart from each other. 10. The method of claim 9,
And the barrier wall assembly is formed to be detachable from the thin film deposition apparatus. 10. The method of claim 9,
And a second barrier wall disposed on the second nozzle so as to correspond to the barrier wall and to be spaced apart from the barrier wall. The method according to claim 1,
The plurality of first slits are formed along a first direction, and the plurality of second slits are formed along a second direction perpendicular to the first direction, and the thin film deposition apparatus is configured to form the first material with respect to the deposition material. A deposition process is performed while moving along one direction, and the deposition source, the first nozzle, and the second nozzle are integrally formed. 19. The method of claim 18,
And the deposition source, the first nozzle, and the second nozzle are integrally formed by a coupling member. The method of claim 19,
The connecting member is a thin film deposition apparatus manufacturing method for guiding the movement path of the deposition material contained in the deposition source. The method of claim 19,
And the connection member is configured to seal the deposition source and the space between the first nozzle and the second nozzle from the outside. 19. The method of claim 18,
And the deposition material moves in the first direction with respect to the thin film deposition device, and the deposition material is continuously deposited on the deposition material. 19. The method of claim 18,
And forming the plurality of first slits to be tilted at a predetermined angle. 24. The method of claim 23,
The plurality of first slits includes two rows of first slits formed along the first direction, and the first slits of the two rows are tilted in a direction facing each other. . 24. The method of claim 23,
The plurality of first slits includes two rows of first slits formed along the first direction, and the first slits disposed on a first side of the first slits of the two rows include: To face the second end of the second nozzle,
And a first slit disposed on a second side of the two rows of first slits so as to face an end of the first side of the second nozzle. The method according to claim 1,
And the thin film deposition apparatus is formed to be spaced apart from the deposition material by a predetermined degree. The method according to claim 1,
And the second nozzle is formed smaller than the deposition material. The method according to claim 1,
Forming the first slits and the second slits so that the total number of the second slits is larger than the total number of the first slits. The method according to claim 1,
And a width in one direction of the second nozzle is equal to a width in one direction of the deposition target to be deposited using the thin film deposition apparatus. A thin film deposition apparatus manufactured by the method of any one of claims 1, 2, and 4 to 29.

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