KR101193191B1 - Apparatus for thin layer deposition - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus that can be easily applied to a large-scale substrate mass production process, and has an improved manufacturing yield. The present invention provides a thin film deposition apparatus for forming a thin film on a substrate, comprising: a deposition source; A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction; A second nozzle disposed to face the deposition source and having a plurality of second slits formed along the first direction; A barrier wall assembly having a plurality of barrier walls disposed along the first direction to partition a space between the first nozzle and the second nozzle; And at least one of a gap control member for controlling a gap between the second nozzle and the substrate and an alignment control member for adjusting the alignment between the second nozzle and the substrate. do.

Description

Thin film deposition apparatus {Apparatus for thin layer deposition}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus which can be easily applied to a large-scale substrate mass production process and has an improved manufacturing yield.

Among the display devices, the organic light emitting display device has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

In general, an organic light emitting display device has a stacked structure in which a light emitting layer is inserted between an anode and a cathode so that colors can be realized on the principle that holes and electrons injected from the anode and the cathode recombine in the light emitting layer to emit light. However, such a structure makes it difficult to obtain high-efficiency light emission. Therefore, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted between each electrode and the light emitting layer.

However, since it is practically very difficult to form fine patterns of organic thin films such as a light emitting layer and an intermediate layer, and the luminous efficiency of red, green, and blue varies depending on the layers, a conventional thin film deposition apparatus has a large area (more than 5G). It is impossible to manufacture large size organic light emitting display devices with satisfactory driving voltage, current density, brightness, color purity, luminous efficiency, and lifetime because it is impossible to pattern mother-glass. It's urgent.

Meanwhile, the organic light emitting display device includes a light emitting layer and an intermediate layer including the same between the first and second electrodes facing each other. In this case, the electrodes and the intermediate layer may be formed by various methods, one of which is deposition. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

An object of the present invention is to provide a thin film deposition apparatus that can be easily manufactured, can be easily applied to a large-scale substrate mass production process, manufacturing yield and deposition efficiency can be improved, and the gap between the nozzle and the substrate can be easily adjusted.

The present invention provides a thin film deposition apparatus for forming a thin film on a substrate, comprising: a deposition source; A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction; A second nozzle disposed to face the deposition source and having a plurality of second slits formed along the first direction; A barrier wall assembly having a plurality of barrier walls disposed along the first direction to partition a space between the first nozzle and the second nozzle; And at least one of a gap control member for controlling a gap between the second nozzle and the substrate and an alignment control member for adjusting the alignment between the second nozzle and the substrate. do.

In the present invention, the gap control member may control the gap between the second nozzle and the substrate to be kept constant.

In the present invention, the gap control member may include a sensor for measuring the position of the second nozzle with respect to the substrate, and an actuator for providing a driving force for moving the second nozzle with respect to the substrate.

Here, a positioning mark is formed on the substrate, and the sensor may measure the position of the second nozzle with respect to the substrate based on the positioning mark.

Here, an open mask may be disposed on the substrate, and the open mask may be disposed so as not to overlap with the positioning mark.

Here, the thin film deposition apparatus, the base frame; And a tray disposed on the base frame and accommodating the second nozzle therein.

Here, the actuator may control the distance between the second nozzle and the substrate by moving the second nozzle with respect to the tray.

Here, the gap control member may include: a first actuator disposed between one end of the second nozzle and the tray to move one end of the second nozzle with respect to the tray; A second actuator disposed between the other end of the second nozzle facing the one end and the tray to move the other end of the second nozzle with respect to the tray; And a third actuator configured to rotate the second nozzle with the axis in the first direction.

In this case, the actuator may be a piezoelectric motor.

Herein, the actuator and the sensor may perform feedback control in real time on the distance between the second nozzle and the substrate.

In the present invention, the gap control member may be disposed at both ends of the second nozzle, and may be a roller or a ball disposed to contact the substrate.

In the present invention, the alignment control member may control the relative position of the second nozzle with respect to the substrate to be kept constant.

The alignment control member may include a sensor that measures a position of the second nozzle with respect to the substrate, and an actuator that provides a driving force for moving the second nozzle with respect to the substrate.

Here, a positioning mark is formed on the substrate, and the sensor may measure a relative position of the second nozzle with respect to the substrate based on the positioning mark.

Here, an open mask may be disposed on the substrate, and the open mask may be disposed so as not to overlap with the positioning mark.

Here, the thin film deposition apparatus, the base frame; And a tray disposed on the base frame and accommodating the second nozzle therein.

Here, the actuator may adjust the alignment between the second nozzle and the substrate by moving the tray with respect to the base frame.

The alignment control member may include: a first actuator disposed between one end of the tray and the base frame to linearly move the tray with respect to the base frame; And a second actuator disposed between the other end of the tray abutting the one end and the base frame to rotate the tray with respect to the base frame.

In this case, the actuator may be a piezoelectric motor.

In this case, the actuator and the sensor may perform feedback control in real time between the second nozzle and the substrate.

In the present invention, each of the plurality of blocking walls may be formed in a direction substantially perpendicular to the first direction, thereby partitioning a space between the first nozzle and the second nozzle.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, the blocking walls and the second nozzle may be formed to be spaced apart at a predetermined interval.

In the present invention, the barrier wall assembly may be formed to be detachable from the thin film deposition apparatus.

In the present invention, the barrier wall assembly may include a first barrier wall assembly having a plurality of first barrier walls and a second barrier wall assembly having a plurality of second barrier walls.

Here, each of the plurality of first blocking walls and the plurality of second blocking walls is formed in a second direction substantially perpendicular to the first direction, thereby providing a space between the first nozzle and the second nozzle. Can be partitioned

Here, each of the plurality of first blocking walls and the plurality of second blocking walls may be disposed to correspond to each other.

Here, the first blocking wall and the second blocking wall corresponding to each other may be disposed on substantially the same plane.

In the present invention, the deposition material vaporized in the deposition source may be deposited on the substrate through the first nozzle and the second nozzle.

In the present invention, the second nozzle may be formed to be spaced apart from the substrate at a predetermined interval.

In the present invention, the deposition source, the first nozzle, the second nozzle and the barrier wall assembly may be formed to be relatively movable with respect to the substrate.

Here, the deposition source, the first nozzle, the second nozzle, and the barrier wall assembly may deposit a deposition material on the substrate while moving relative to the substrate.

Here, the deposition source, the first nozzle, the second nozzle and the barrier wall assembly may be relatively moved along a plane parallel to the substrate.

According to another aspect of the present invention, a thin film deposition apparatus for forming a thin film on a substrate, comprising: a deposition source for emitting a deposition material; A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction; A second nozzle disposed to face the first nozzle and having a plurality of second slits formed along a second direction perpendicular to the first direction; And at least one of a gap control member for controlling a gap between the second nozzle and the substrate and an alignment control member for adjusting an alignment between the second nozzle and the substrate. The deposition is performed while moving in the first direction with respect to the thin film deposition apparatus, and the deposition source, the first nozzle, and the second nozzle are provided integrally.

In the present invention, the gap control member may control the gap between the second nozzle and the substrate to be kept constant.

In the present invention, the gap control member may include a sensor for measuring the position of the second nozzle with respect to the substrate, and an actuator for providing a driving force for moving the second nozzle with respect to the substrate.

Here, a positioning mark is formed on the substrate, and the sensor may measure the position of the second nozzle with respect to the substrate based on the positioning mark.

Here, an open mask may be disposed on the substrate, and the open mask may be disposed so as not to overlap with the positioning mark.

Here, the thin film deposition apparatus, the base frame; And a tray disposed on the base frame and accommodating the second nozzle therein.

Here, the actuator may control the distance between the second nozzle and the substrate by moving the second nozzle with respect to the tray.

Here, the gap control member may include: a first actuator disposed between one end of the second nozzle and the tray to move one end of the second nozzle with respect to the tray; A second actuator disposed between the other end of the second nozzle facing the one end and the tray to move the other end of the second nozzle with respect to the tray; And a third actuator configured to rotate the second nozzle with the axis in the first direction.

In this case, the actuator may be a piezoelectric motor.

Herein, the actuator and the sensor may perform feedback control in real time on the distance between the second nozzle and the substrate.

In the present invention, the gap control member may be disposed at both ends of the second nozzle, and may be a roller or a ball disposed to contact the substrate.

In the present invention, the alignment control member may control the relative position of the second nozzle with respect to the substrate to be kept constant.

The alignment control member may include a sensor that measures a position of the second nozzle with respect to the substrate, and an actuator that provides a driving force for moving the second nozzle with respect to the substrate.

Here, a positioning mark is formed on the substrate, and the sensor may measure a relative position of the second nozzle with respect to the substrate based on the positioning mark.

Here, an open mask may be disposed on the substrate, and the open mask may be disposed so as not to overlap with the positioning mark.

Here, the thin film deposition apparatus, the base frame; And a tray disposed on the base frame and accommodating the second nozzle therein.

Here, the actuator may adjust the alignment between the second nozzle and the substrate by moving the tray with respect to the base frame.

The alignment control member may include: a first actuator disposed between one end of the tray and the base frame to linearly move the tray with respect to the base frame; And a second actuator disposed between the other end of the tray abutting the one end and the base frame to rotate the tray with respect to the base frame.

In this case, the actuator may be a piezoelectric motor.

In this case, the actuator and the sensor may perform feedback control in real time between the second nozzle and the substrate.

In the present invention, the deposition source, the deposition source nozzle unit and the patterning slit sheet may be integrally formed by being coupled by a connecting member.

Here, the connection member may guide the movement path of the deposition material.

Here, the connection member may be formed to seal the space between the deposition source and the deposition source nozzle unit and the patterning slit sheet from the outside.

In the present invention, the thin film deposition apparatus may be formed to be spaced apart from the substrate by a predetermined degree.

In the present invention, as the substrate moves along the first direction with respect to the thin film deposition apparatus, the deposition material may be continuously deposited on the substrate.

In the present invention, the patterning slit sheet of the thin film deposition apparatus may be formed smaller than the substrate.

In the present invention, the plurality of deposition source nozzles may be formed to be tilted by a predetermined angle.

Here, the plurality of deposition source nozzles may include two rows of deposition source nozzles formed along the first direction, and the two rows of deposition source nozzles may be tilted in a direction facing each other.

The plurality of deposition source nozzles may include two rows of deposition source nozzles formed along the first direction, and the deposition source nozzles may be disposed on a first side of the two deposition source nozzles. Are disposed to face the second side end of the patterned slit sheet, and deposition source nozzles disposed on the second side of the two rows of deposition source nozzles may be disposed to face the first side end of the patterned slit sheet. Can be.

According to the thin film deposition apparatus of the present invention made as described above, it is easy to manufacture, can be easily applied to the large-scale substrate mass production process, the production yield and deposition efficiency is improved, the gap between the nozzle and the substrate is easy to control the effect You can get it.

1 is a perspective view schematically showing a thin film deposition apparatus according to a first embodiment of the present invention.
FIG. 2 is a schematic side view of the thin film deposition apparatus of FIG. 1.
3 is a schematic plan view of the thin film deposition apparatus of FIG. 1.
4 is a view schematically showing a coupling relationship between a second nozzle and a second nozzle frame according to the first embodiment of the present invention.
5A is a diagram schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus according to the first embodiment of the present invention.
FIG. 5B is a diagram illustrating a shadow generated when the deposition space is separated by the first barrier wall and the second barrier wall as shown in FIG. 5A.
FIG. 5C is a diagram illustrating shadows occurring when the deposition space is not separated. FIG.
6 is a side sectional view showing a thin film deposition apparatus according to the first embodiment of the present invention.
7 is a front view schematically showing a gap control member and an alignment control member of the thin film deposition apparatus according to the first embodiment of the present invention.
FIG. 8 is a diagram illustrating a method of maintaining a gap between a second nozzle and a substrate by a gap control member in the thin film deposition apparatus of FIG. 7.
FIG. 9 is a diagram illustrating a method in which an alignment control member controls alignment between a second nozzle and a substrate in the thin film deposition apparatus of FIG. 7.
10 is a side sectional view showing a thin film deposition apparatus according to a second embodiment of the present invention.
11 is a front view schematically showing a gap control member and an alignment control member of the thin film deposition apparatus according to the second embodiment of the present invention.
Fig. 13 is a side sectional view showing a thin film deposition apparatus according to the third embodiment of the present invention.
14 is a perspective view schematically showing a thin film deposition apparatus according to a fourth embodiment of the present invention.
FIG. 15 is a schematic side view of the thin film deposition apparatus of FIG. 14.
FIG. 16 is a schematic plan view of the thin film deposition apparatus of FIG. 14.
17 is a view showing a thin film deposition apparatus according to a fifth embodiment of the present invention.
18 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is not tilted in the thin film deposition apparatus according to the present invention.
19 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is tilted in the thin film deposition apparatus according to the present invention.

1 is a perspective view schematically showing a thin film deposition apparatus according to a first embodiment of the present invention, FIG. 2 is a schematic side cross-sectional view of the thin film deposition apparatus of FIG. 1, and FIG. 3 is a schematic view of the thin film deposition apparatus of FIG. 1. It is a plan cross-sectional view.

1, 2 and 3, the thin film deposition apparatus 100 according to the first embodiment of the present invention is a deposition source 110, the first nozzle 120, the barrier wall assembly 130, the second The nozzle 150 includes a second nozzle frame 155 and a substrate 160. In addition, the thin film deposition apparatus 100 according to the first embodiment of the present invention further includes a gap control member (see FIG. 7) and an alignment control member (see FIG. 7). Such a gap control member and an alignment control member will be described in detail later with reference to FIG. 6.

1, 2 and 3 are not shown in the chamber for convenience of description, it is preferable that all the configurations of FIGS. 1 to 3 are arranged in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the first nozzle 120 and the second nozzle 150 to be deposited on the substrate 160 in a desired pattern, a chamber (not shown) is basically provided. The inside must maintain the same high vacuum as the FMM deposition method. In addition, when the temperature of the barrier wall 131 and the second nozzle 150 is sufficiently lower than the deposition source 110 temperature (about 100 ° or less), the space between the first nozzle 120 and the second nozzle 150 is maintained in a high vacuum state. Can be maintained. As such, when the temperature of the barrier wall assembly 130 and the second nozzle 150 is sufficiently low, all of the deposition material 115 radiated in an undesired direction may be adsorbed onto the barrier wall assembly 130 to maintain high vacuum. Since the collision between the deposition materials does not occur, the straightness of the deposition materials can be secured. In this case, the barrier wall assembly 130 faces the deposition source 110 at a high temperature, and the temperature closes to the deposition source 110 at a maximum of about 167 °, so that a partial cooling device may be further provided if necessary. To this end, a cooling member may be formed in the barrier wall assembly 130.

In this chamber (not shown), a substrate 160, which is a deposition target, is disposed. The substrate 160 may be a substrate for a flat panel display. A large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

On the side opposite to the substrate 160 in the chamber, a deposition source 110 in which the deposition material 115 is received and heated is disposed. As the deposition material 115 contained in the deposition source 110 is vaporized, deposition is performed on the substrate 160. In detail, the deposition source 110 includes the crucible 111 filled with the deposition material 115 therein, and the deposition material 115 filled inside the crucible 111 by heating the crucible 111. One side, in detail, comprises a heater 112 for evaporating to the first nozzle 120 side.

The first nozzle 120 is disposed on one side of the deposition source 110, in detail, the side facing the substrate 160 from the deposition source 110. In addition, a plurality of first slits 121 are formed in the first nozzle 120 along the Y-axis direction. Here, the plurality of first slits 121 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and is directed toward the substrate 160, which is the deposition target.

One side of the first nozzle 120 is provided with a barrier wall assembly 130. The barrier wall assembly 130 includes a plurality of barrier walls 131 and a barrier wall frame 132 disposed outside the barrier walls 131. Here, the plurality of blocking walls 131 may be provided in parallel with each other along the Y-axis direction. The plurality of blocking walls 131 may be formed at equal intervals. In addition, each blocking wall 131 is formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction. The plurality of blocking walls 131 arranged as described above serve to partition a space between the first nozzle 120 and the second nozzle 150 to be described later. Here, the thin film deposition apparatus 100 according to the first embodiment of the present invention is characterized in that the deposition space is separated for each first slit 121 through which the deposition material is sprayed by the blocking wall 131. do.

Here, each of the blocking walls 131 may be disposed between the first slits 121 adjacent to each other. In other words, it may be regarded that one first slit 121 is disposed between the blocking walls 131 neighboring each other. Preferably, the first slit 121 may be located at the center of the barrier wall 131 adjacent to each other. As such, the barrier wall 131 partitions a space between the first nozzle 120 and the second nozzle 150, which will be described later, so that the deposition material discharged to the first slit 121 is separated from the first slit ( It is not mixed with the deposition materials discharged from 121, but is deposited on the substrate 160 through the second slit 151. In other words, the blocking walls 131 guide the movement path in the Y-axis direction of the deposition material so that the deposition material discharged through the first slit 121 is not dispersed.

Meanwhile, a blocking wall frame 132 may be further provided outside the plurality of blocking walls 131. The blocking wall frame 132 is provided on the upper and lower surfaces of the plurality of blocking walls 131 to support the positions of the plurality of blocking walls 131 and at the same time, the deposition material discharged through the first slit 121 is dispersed. It serves to guide the movement path of the deposition material in the Z-axis direction.

Meanwhile, the barrier wall assembly 130 may be formed to be separated from the thin film deposition apparatus 100. In detail, the conventional FMM deposition method has a problem that the deposition efficiency is low. Here, the deposition efficiency refers to the ratio of the material vaporized on the substrate among the vaporized material in the deposition source, the deposition efficiency in the conventional FMM deposition method is about 32%. Moreover, in the conventional FMM deposition method, since about 68% of organic matter which is not used for deposition is deposited everywhere in the evaporator, there is a problem that its recycling is not easy.

In order to solve this problem, in the thin film deposition apparatus 100 according to the first embodiment of the present invention, since the deposition space is separated from the external space by using the barrier wall assembly 130, the deposition space is not deposited on the substrate 160. Undeposited material is mostly deposited within the barrier wall assembly 130. Therefore, after a long time deposition, when a large amount of deposition material is accumulated in the barrier wall assembly 130, the barrier wall assembly 130 is separated from the thin film deposition apparatus 100, and then put into a separate deposition material recycling apparatus to recover the deposition material. can do. Through such a configuration, it is possible to obtain an effect of improving deposition efficiency and reducing manufacturing cost by increasing deposition material recycling rate.

A second nozzle 150 and a second nozzle frame 155 are further provided between the deposition source 110 and the substrate 160. The second nozzle frame 155 is formed in a lattice form, such as a window frame, and the second nozzle 150 is coupled to the inside thereof. However, in the drawings, although the second nozzle 150 and the second nozzle frame 155 are formed as separate members and are coupled to each other, the spirit of the present invention is not limited thereto, and the second nozzle 150 and The second nozzle frame 155 may be integrally formed. In this case, the second nozzle 150 and the second nozzle frame 155 may be collectively referred to as a second nozzle.

In addition, a plurality of second slits 151 are formed in the second nozzle 150 along the Y-axis direction. Here, the plurality of second slits 151 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and the second nozzle 150 and is directed toward the substrate 160, which is the deposition target.

Here, the thin film deposition apparatus 100 according to the first embodiment of the present invention is characterized in that the total number of the second slits 151 is larger than the total number of the first slits 121. In addition, the number of the second slits 151 is larger than the number of the first slits 121 disposed between the two blocking walls 131 adjacent to each other.

 That is, one or more first slits 121 are disposed between two blocking walls 131 neighboring each other. At the same time, a plurality of second slits 151 are disposed between two blocking walls 131 neighboring each other. In addition, the space between the first nozzle 120 and the second nozzle 150 is divided by two blocking walls 131 adjacent to each other, so that the deposition space is separated for each first slit 121. Therefore, the deposition material radiated from one first slit 121 is to be deposited on the substrate 160 through most of the second slits 151 in the same deposition space.

Meanwhile, the second nozzle 150 may be manufactured through etching, which is the same method as that of a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM also needs to be enlarged. Therefore, there is a problem in that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern. However, in the thin film deposition apparatus 100 according to the first embodiment of the present invention, the deposition is performed while the thin film deposition apparatus 100 moves in the Z-axis direction in a chamber (not shown). In other words, when the thin film deposition apparatus 100 completes the deposition at the current position, the thin film deposition apparatus 100 or the substrate 160 is moved relatively in the Z-axis direction to continuously perform deposition. Therefore, in the thin film deposition apparatus 100 of the present invention, the second nozzle 150 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition apparatus 100 of the present invention, when the width in the Y-axis direction of the second nozzle 150 and the width in the Y-axis direction of the substrate 160 are the same, the second nozzle 150 may be formed. The length of the Z-axis direction may be formed smaller than the length of the substrate 160. Thus, since the second nozzle 150 can be made much smaller than the conventional FMM, the second nozzle 150 of the present invention is easy to manufacture. That is, in all processes, such as etching operations of the second nozzle 150, precision tension and welding operations, moving and cleaning operations thereafter, the small size of the second nozzle 150 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

On the other hand, the above-described barrier wall assembly 130 and the second nozzle 150 may be formed to be spaced apart from each other to some extent. The reason for separating the barrier wall assembly 130 and the second nozzle 150 from each other is as follows.

First, the second nozzle 150 and the second nozzle frame 155 should be aligned with a precise position and a gap Gap on the substrate 160, that is, a part requiring high precision control. Therefore, in order to facilitate the control by lightening the weight of the portion requiring high precision, the deposition source 110, the first nozzle 120, and the barrier wall assembly 130, which require no precision control and are expensive, are prepared. It is separated from the two nozzles 150 and the second nozzle frame 155. Next, since the temperature of the barrier wall assembly 130 is increased by at least 100 degrees by the deposition source 110 in a high temperature state, the temperature of the elevated barrier wall assembly 130 is not conducted to the second nozzle 150. In order to prevent the barrier wall assembly 130 and the second nozzle 150 to be separated. Next, in the thin film deposition apparatus 100 of the present invention, the deposition material attached to the barrier wall assembly 130 may be mainly recycled, and the deposition material attached to the second nozzle 150 may not be recycled. Therefore, when the barrier wall assembly 130 is separated from the second nozzle 150, the recycling of the deposition material may be easily performed. In addition, a compensation plate (not shown) may be further provided to secure the film uniformity of the entire substrate 160. Very easy. Finally, a partition (not shown) may be further provided to increase the nozzle replacement period by preventing deposition of the deposition material on the second nozzle 150 in a state of depositing one substrate and before depositing the next substrate. . At this time, the partition (not shown) is easy to install between the blocking wall 131 and the second nozzle 150.

4 is a view schematically showing a coupling relationship between a second nozzle and a second nozzle frame according to the first embodiment of the present invention.

Referring to FIG. 4, the second nozzle frame 155 is formed in a lattice shape, such as a window frame, and a second nozzle 150 having a plurality of second slits 151 formed therein is coupled thereto. Here, in the thin film deposition apparatus 100 according to the first embodiment of the present invention, when the second nozzle 150 and the second nozzle frame 155 are coupled, the second nozzle frame 155 is the second nozzle ( The second nozzle 150 and the second nozzle frame 155 are coupled to each other to impart a predetermined tensile force to the 150.

In detail, the precision of the second nozzle 150 may be divided into a manufacturing error of the second nozzle 150 and an error due to thermal expansion of the second nozzle 150 during deposition. Here, in order to minimize the manufacturing error of the second nozzle 150, a counter force technique used when precisely tensioning / welding the fine metal mask to the frame may be applied. This will be described in more detail as follows. First, as shown in FIG. 4, the second nozzle 150 is pressed from the inside to the outside to tension the second nozzle 150. Next, a compressive force is applied to the second nozzle frame 155 in a direction corresponding to the pressing force applied to the second nozzle 150, that is, in an opposite direction, to be in equilibrium with an external force applied to the second nozzle 150. . Next, the second nozzle 150 is coupled to the second nozzle frame 155 by welding the edge of the second nozzle 150 to the second nozzle frame 155. Finally, when the external force acting to balance the second nozzle 150 and the second nozzle frame 155 is removed, a tensile force is applied to the second nozzle 150 by the second nozzle frame 155. Using such a precision tensile / compression / welding technique, the manufacturing error of the second nozzle 150 can be manufactured to 2 μm or less even if there is an etching dispersion.

On the other hand, the thin film deposition apparatus 100 according to the first embodiment of the present invention is characterized in that the temperature of the second nozzle frame 155 is kept constant. In detail, in the present invention, since the second nozzle 150 continues to look at the high temperature deposition source 110, the temperature is raised to a certain degree (about 5 to 15 °) because the radiant heat is always received. As described above, when the temperature of the second nozzle 150 rises, the second nozzle 150 may expand to reduce pattern accuracy. In order to solve such a problem, in the present invention, the temperature of the second nozzle frame 155 that uses the stripe type second nozzle 150 and holds the second nozzle 150 in a tensioned state. By making it uniform, the pattern error by the temperature rise of the 2nd nozzle 150 is prevented.

In this case, since the thermal expansion (pattern error) in the horizontal direction (Y-axis direction) of the second nozzle 150 is determined by the temperature of the second nozzle frame 155, only the temperature of the second nozzle frame 155 is constant. Even if the temperature of the second nozzle 150 increases, the pattern error problem due to thermal expansion does not occur. On the other hand, thermal expansion in the longitudinal direction (Z-axis direction) of the second nozzle 150 exists, but this is a scanning direction and thus has no relation to pattern accuracy.

In this case, since the second nozzle frame 155 does not directly look at the deposition source 110 in a vacuum state, it does not receive radiant heat, and since the second nozzle frame 155 is not connected to the deposition source 110, the second nozzle frame 155 has no thermal conductivity. There is little room for the temperature to rise. If there is a problem of slight temperature rise (1 to 3 °), it is easy to maintain a constant temperature by using a thermal shield or a radiation pin. This will be described later.

As described above, the second nozzle frame 155 imparts a predetermined tensile force to the second nozzle 150, and the temperature of the second nozzle frame 155 is kept constant, thereby thermal expansion of the second nozzle 150. The problem and the pattern precision problem of the 2nd nozzle 150 are isolate | separated, and the effect which the pattern precision of the 2nd nozzle 150 improves can be acquired. That is, as described above, when the precision tension / compression / welding technique is used, the manufacturing error of the second nozzle 150 may be 2 μm or less even if there is an etching dispersion. In addition, the error due to thermal expansion due to the temperature rise of the second nozzle 150 is applied by applying a tensile force to the stripe type second nozzle 150 and making the temperature of the second nozzle frame 155 constant. Does not occur. Therefore, it can be seen that the precision of the second nozzle 150 can be manufactured by {second nozzle manufacturing error (<2) + second nozzle thermal expansion error (˜0) <2 um}.

FIG. 5A is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus according to the first embodiment of the present invention, and FIG. 5B is a state in which a deposition space is separated by a barrier wall as shown in FIG. 5A. FIG. 5C is a diagram illustrating a shadow that occurs when the deposition space is not separated.

Referring to FIG. 5A, the deposition material vaporized from the deposition source 110 is deposited on the substrate 160 through the first nozzle 120 and the second nozzle 150. At this time, since the space between the first nozzle 120 and the second nozzle 150 is partitioned by the blocking walls 131, the deposition from the respective first slits 121 of the first nozzle 120 is deposited. The material is not mixed with the deposition material from the other first slits by the barrier wall 131.

When the space between the first nozzle 120 and the second nozzle 150 is partitioned by the first barrier wall assembly 130 and the second barrier wall assembly 140, as shown in FIG. 5B, deposition is performed. Materials are deposited on the substrate 160 through the second nozzle 150 at an angle of about 55 ° to 90 °. That is, the deposition angle of the deposition material passing through the slits next to the first barrier wall assembly 130 and the second barrier wall assembly 140 is about 55 °, and the deposition angle of the deposition material passing through the slit of the central portion is about 90 °. At this time, the width SH1 of the shaded region generated in the substrate 160 is determined by the following equation (1).

[Equation 1]

SH ₁ = s * d _s / h

On the other hand, when the space between the first nozzle and the second nozzle is not partitioned by the barrier walls, as shown in FIG. 5C, the deposition materials pass through the second nozzle at various angles in a wider range than in FIG. 5B. Done. That is, in this case, not only the deposition material radiated from the first slit directly above the second slit, but also the deposition materials radiated from the other first slit are deposited on the substrate 160 through the second slit 151. The width of the shaded area SH ₂ formed in the substrate 160 becomes very large as compared with the case where the blocking plate is provided. In this case, the width SH ₂ of the shaded region generated in the substrate 160 is determined by Equation 2 below.

&Quot; (2) &quot;

SH ₂ = s * 2d / h

When comparing Equation 1 and Equation 2, since d (interval between neighboring blocking walls) is formed to be much larger than several times to several tens more than d _s (width of the first slit), the first nozzle 120 It can be seen that when the space between the second nozzle 150 is partitioned by the barrier walls 131, the shading is much smaller. Here, in order to reduce the width SH ₂ of the shaded area generated in the substrate 160, (1) reduce the distance between the barrier wall 131 is installed (d decrease), or (3) the second nozzle 140. The distance between the substrate 160 and the substrate 160 should be reduced (s reduced) or (3) the height of the barrier wall 131 should be increased (h increased).

As such, by providing the barrier wall 131, the shadow generated on the substrate 160 is reduced, and thus the second nozzle 150 can be separated from the substrate 160.

In detail, in the thin film deposition apparatus 100 according to the first embodiment of the present invention, the second nozzle 150 is formed to be spaced apart from the substrate 160 to some extent. In other words, in the conventional FMM deposition method, the deposition process was performed by closely attaching a mask to the substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. In order to solve such a problem, in the thin film deposition apparatus 100 according to the first embodiment of the present invention, the second nozzle 150 is disposed to be spaced apart from the substrate 160 as the deposition target at a predetermined interval. This can be realized by providing the barrier wall 131, whereby the shadow generated on the substrate 160 is reduced.

According to the present invention as described above, an effect of preventing a defect due to contact between the substrate and the mask can be obtained. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

Hereinafter, the alignment control member and the gap control member for satisfying the alignment accuracy and the gap accuracy of the second nozzle 150 and the substrate 160 of the thin film deposition apparatus 100 according to the first embodiment of the present invention. It demonstrates in detail.

As described above, the thin film deposition apparatus 100 according to the first exemplary embodiment of the present invention is formed such that the second nozzle 150 is spaced apart from the substrate 160 by a certain degree, and the second nozzle 150 is formed of the substrate 160. It is characterized in that the deposition is performed while moving relative to the Z-axis relative to). However, in order to pattern the precise thin film while the second nozzle 150 moves in this manner, the positional accuracy of the second nozzle 150 and the substrate 160 is very important. In addition, when the gap Gap between the second nozzle 150 and the substrate 160 is changed, the pattern position is shaken. Therefore, it is necessary to maintain a constant gap Gap (for example, 100 μm) as much as possible. To this end, the thin film deposition apparatus 100 according to the first embodiment of the present invention includes a gap control member and an alignment control member so that the gap Gap between the second nozzle 150 and the substrate 160 is constant. At the same time, the second nozzle 150 and the substrate 160 are precisely aligned.

6 is a side sectional view showing a thin film deposition apparatus according to the first embodiment of the present invention. 7 is a front view schematically showing a gap control member and an alignment control member of the thin film deposition apparatus according to the first embodiment of the present invention. For convenience of description, in FIG. 7, components other than the second nozzle, the second nozzle frame, and the substrate of the components of the thin film deposition apparatus illustrated in FIG. 6 are omitted.

6 and 7, the thin film deposition apparatus 100 according to the first embodiment of the present invention includes a base frame 171, a tray 173, an open mask 175, a rail 177, And a spacing control member and an alignment control member.

The deposition region 161 on which the deposition material is deposited is disposed on the substrate 160, and the non-deposition region 162 on which the deposition material is not deposited is present. In addition, on the substrate 160, positioning that serves as a reference for maintaining a constant gap between the second nozzle 150 and the substrate 160 and for precise alignment between the second nozzle 150 and the substrate 160 is performed. A positioning mark 163 is formed. In the drawing, a positioning mark 163 is illustrated as being formed at three positions of the left end, the center, and the right end of the substrate 160, but the spirit of the present invention is not limited thereto.

On the other hand, an open mask 175 is disposed on the substrate 160. In general, a plurality of deposition regions 161 exist on the large substrate 160, and there is a non-deposition region 162 between which the deposition materials should not be deposited. In this case, an open mask 175 is used to prevent the deposition material from being deposited on the non-deposition region 162. When a general open mask is used, the gap between the second nozzle 150 and the substrate 160 is adjusted. And position measurement becomes difficult. Therefore, in the thin film deposition apparatus according to the first embodiment of the present invention, a region where the substrate 160 is not covered by the open mask 175 is disposed in the same Z-axis direction as the moving direction of the second nozzle 150. It is characterized by being. In other words, the opening mask 175 is disposed on the substrate 160 such that the positioning mark 163 is formed so that the second mask 150 and the substrate 160 are not covered by the open mask 175. It is possible to adjust the gap and measure the position between them.

Rails 177 are disposed on both sides of the substrate 160 to be deposited.

The base frame 171 is fitted to the rail 177. The base frame 171 moves up and down in the Z-axis direction along the rail 177 by a driving force provided by a motor (not shown). On the base frame 171, all configurations related to maintaining a gap between the second nozzle 150 and the substrate 160 and precise alignment between the second nozzle 150 and the substrate 160 are provided. Elements, namely the second nozzle 150, the second nozzle frame 155, the tray 173, the spacing control member and the alignment control member are disposed. In other words, the tray 173 is installed on the base frame 171, and the second nozzle frame 155 is installed in the tray 173. In addition, an interval control member is disposed between the tray 173 and the second nozzle frame 155, and an alignment control member is disposed and disposed between the base frame 171 and the tray 173.

The base frame 171 should be made as lightweight as possible, and the left and right motors (not shown) for moving the base frame 171 in the Z-axis direction can drive all the components disposed on the base frame 171. Provide sufficient driving force. In addition, the motor (not shown) should be usable in vacuum, the left and right moving speeds should be the same, and the vibration should be small enough. In addition, the Z-axis movement speed does not have to be very precise, but it must move at a constant speed as much as possible, and shaking during movement should be minimized.

The tray 173 is disposed on the base frame 171. And the 2nd nozzle frame 155 is arrange | positioned on the tray 173 so that attachment or detachment is possible.

In detail, when the second nozzle frame 155 is mounted, the tray 173 serves to fix the second nozzle frame 155 so as not to move in the Y-axis direction and the Z-axis direction. On the other hand, when the second nozzle frame 155 is mounted, the tray 173 is formed such that the second nozzle frame 155 is movable to a certain extent in the X-axis direction within the tray 173. That is, the gap Gap control between the substrate 160 and the second nozzle 150 in the X-axis direction is performed by moving the second nozzle frame 155 with respect to the tray 173.

On the other hand, the tray 173 is moved in the Y-axis direction and the Z-axis direction with respect to the base frame 171 by using the first alignment adjustment actuator 191 and the second alignment adjustment actuator 192 which will be described later. . On the other hand, the tray 173 should be fixed in the X-axis direction. That is, precise alignment of the second nozzle 150 and the substrate 160 on the YZ plane is performed by moving the tray 173 with respect to the base frame 171.

The gap control member includes a first gap adjustment actuator 181, a second gap adjustment actuator 182, a third gap adjustment actuator 183, and a gap adjustment sensor 185a, 185b, 185c, and 185d. The first gap adjustment actuator 181, the second gap adjustment actuator 182, and the third gap adjustment actuator 183 may be installed between the tray 173 and the second nozzle frame 155, and the gap adjustment sensor ( 185 may be installed on the second nozzle frame 155.

In detail, the actuator (actuator) is a generic name of a drive device using electric, hydraulic, compressed air, etc., in the field of mechatronics refers to an electric motor having a control mechanism of some kind, or a piston or cylinder mechanism that operates by hydraulic or pneumatic pressure.

 In the present invention, the first gap adjustment actuator 181 is disposed between one side end of the tray 173, the left end of the tray 173 and the second nozzle frame 155 when seen in the drawing, and the second nozzle frame 155. ) And a gap between the second nozzle 150 disposed on the second nozzle frame 155 and the substrate 160. The second gap adjustment actuator 182 is disposed between the other side end of the tray 173 and the right end of the tray 173 and the second nozzle frame 155 when viewed in the drawing, and thus the second nozzle frame 155 and the second nozzle. It serves to control the distance between the second nozzle 150 and the substrate 160 disposed on the nozzle frame 155. The third gap adjusting actuator 183 is disposed at one end of the tray 173 and at the center of the lower end of the tray 173 as shown in the drawing, and is disposed on the second nozzle frame 155 and the second nozzle frame 155. It serves to control the gap between the second nozzle 150 and the substrate 160.

Here, a piezoelectric motor may be used as the first, second, and third spacing actuators 181, 182, and 183. Piezo motor is a kind of electric motor based on the shape change of piezo material generated when an electric field is applied, and is being used in various ways as an actuator capable of producing a small and strong driving force.

Meanwhile, the distance adjusting sensors 185a, 185b, 185c, and 185d may be installed at four corners of the second nozzle frame 155. The gap control sensors 185a, 185b, 185c, and 185d serve to measure a gap between the second nozzle frame 155 and the substrate 160. The gap adjusting sensors 185a, 185b, 185c, and 185d may measure a gap between the second nozzle frame 155 and the substrate 160 using a laser. Here, the gap adjusting sensors 185a, 185b, 185c, and 185d may be disposed between the second nozzle frame 155 and the substrate 160 by using a positioning mark 163 on the substrate 160. Can be measured. A method of adjusting the gap between the second nozzle 150 and the substrate 160 by the gap control member will be described in detail with reference to FIG. 8.

The alignment control member includes a first alignment adjustment actuator 191, a second alignment adjustment actuator 192, and alignment adjustment sensors 195a, 195b, 195c, and 195d. The first alignment adjustment actuator 191 and the second alignment adjustment actuators 192 may be installed between the base frame 171 and the tray 173, and the alignment adjustment sensors 195a, 195b, and 195c. The 195d may be installed on the second nozzle frame 155.

In the present invention, the first alignment adjustment actuator 191 is disposed between the left end of the base frame 171 and the left end of the tray 173 as shown in the drawings, and is disposed on the tray 173 and the tray 173. It serves to control the Y-axis alignment between the second nozzle 150 and the substrate 160.

On the other hand, the second alignment adjustment actuator 192 is seen between the lower end of the base frame 171 and the lower end of the tray 173, in detail, the lower right of the base frame 171 and the right side of the tray 173 as shown in the drawings. The second nozzle 150 and the substrate 160 are disposed between the lower ends by adjusting the rotation angle of the tray 173 (and the second nozzle 150 disposed on the tray 173) with respect to the substrate 160. It controls the alignment of the liver.

Meanwhile, the alignment control sensors 195a, 195b, 195c, and 195d may be installed at four corners of the second nozzle frame 155. Alignment adjustment sensors 195a, 195b, 195c, and 195d serve to measure whether the second nozzle frame 155 and the substrate 160 are aligned. The alignment control sensors 195a, 195b, 195c, and 195d may measure alignment between the second nozzle frame 155 and the substrate 160 using a laser. Here, the alignment adjustment sensors 195a, 195b, 195c, and 195d may be disposed between the second nozzle frame 155 and the substrate 160 by using a positioning mark 163 on the substrate 160. The alignment can be measured. A method of aligning the second nozzle 150 and the substrate 160 by the alignment control member will be described in detail with reference to FIG. 9.

Hereinafter, a method for maintaining a gap between the second nozzle 150 and the substrate 160 by the gap control member will be described in detail.

Referring to FIG. 8, three actuators are basically required to control a gap between the second nozzle 150 and the substrate 160.

First, by driving the first gap adjustment actuator 181 to move the second nozzle frame 155 to the tray 173 in the X-axis direction to some extent, the first gap adjustment sensor 185a and the third gap adjustment sensor. The average value of the interval between the second nozzle 150 and the substrate 160 measured at 185c is made a desired value (for example, 100 um). For example, when the average value of the gap between the second nozzle 150 and the substrate 160 measured by the first gap adjusting sensor 185a and the third gap adjusting sensor 185c is larger than a desired value, the first gap adjusting is performed. The actuator 181 moves the second nozzle frame 155 with respect to the tray 173 so that the portion in which the first spacing actuator 181 of the second nozzle frame 155 is installed is close to the substrate 160. On the contrary, when the average value of the gap between the second nozzle 150 and the substrate 160 measured by the first gap adjusting sensor 185a and the third gap adjusting sensor 185c is smaller than a desired value, the first gap adjusting actuator ( The 181 moves the second nozzle frame 155 relative to the tray 173 so that the portion where the first spacing actuator 181 of the second nozzle frame 155 is installed is away from the substrate 160.

In the same manner, the second gap adjustment actuator 182 is driven to move the second nozzle frame 155 to the tray 173 in the X-axis direction by a certain amount, whereby the second gap adjustment sensor 185b and the fourth gap are provided. The average value of the distance between the second nozzle 150 and the substrate 160 measured by the adjustment sensor 185d is made a desired value (for example, 100 μm). For example, when the average value of the gap between the second nozzle 150 and the substrate 160 measured by the second gap adjusting sensor 185b and the fourth gap adjusting sensor 185d is larger than a desired value, the second gap adjusting is performed. The actuator 182 moves the second nozzle frame 155 with respect to the tray 173 so that the portion where the second gap adjusting actuator 182 of the second nozzle frame 155 is installed is close to the substrate 160. On the contrary, when the average value of the gap between the second nozzle 150 and the substrate 160 measured by the second gap adjusting sensor 185b and the fourth gap adjusting sensor 185d is smaller than a desired value, the second gap adjusting actuator ( The 182 moves the second nozzle frame 155 with respect to the tray 173 so that the portion where the second gap adjusting actuator 182 of the second nozzle frame 155 is installed is away from the substrate 160.

The gap control on the left and right sides includes an average value of the values measured by the first gap adjusting sensor 185a and the third gap adjusting sensor 185c, the second gap adjusting sensor 185b, and the fourth gap adjusting sensor ( Since the average value of the values measured at 185d) is controlled respectively, the difference between the value measured at the first gap adjusting sensor 185a and the value measured at the third gap adjusting sensor 185c and the second gap adjusting sensor ( In order to reduce the difference between the value measured at 185b and the value measured at the fourth gap adjusting sensor 185d, the third gap adjusting actuator 183 is driven to form the second nozzle frame 155 around the arrow A of FIG. 8. ) Is rotated about the tray 173 to a certain degree.

That is, when the gap measurement values at the first gap adjustment sensor 185a and the second gap adjustment sensor 185b are larger than the gap measurement values at the third gap adjustment sensor 185c and the fourth gap adjustment sensor 185d. The second nozzle frame 155 is moved to drive the third gap adjusting actuator 183 so that the portion where the third gap adjusting actuator 183 of the second nozzle frame 155 is installed is close to the substrate 160. Let's do it.

On the contrary, the gap measurement values at the first gap adjustment sensor 185a and the second gap adjustment sensor 185b are smaller than the gap measurements at the third gap adjustment sensor 185c and the fourth gap adjustment sensor 185d. The second nozzle frame 155 may be driven to drive the third gap adjusting actuator 183 so that the portion where the third gap adjusting actuator 183 of the second nozzle frame 155 is installed is separated from the substrate 160. Move it.

As such, by precisely controlling the distance between the second nozzle 150 and the substrate 160 using three gap adjustment actuators and four gap adjustment sensors, the pattern position is kept constant, thereby improving product reliability. The effect can be obtained.

In addition, when the substrate is further enlarged, it may be possible to further control the gap between the second nozzle 150 and the substrate 160 by further comprising gap adjusting actuators and gap adjusting sensors.

Hereinafter, a method for the alignment control member to align the second nozzle 150 and the substrate 160 will be described in detail.

Referring to FIG. 9, two actuators are basically required to precisely align the second nozzle 150 and the substrate 160 as described above. In FIG. 9, for convenience of description, the second nozzle (see 150 of FIG. 7) and the open mask (see 175 of FIG. 7) are omitted.

First, referring to FIG. 9A, by using the first alignment adjustment sensor 195a, the second alignment adjustment sensor 195b, the third alignment adjustment sensor 195c, and the fourth alignment adjustment sensor 195d. The relative Y-axis position between the positioning mark 163 on the substrate 160 and the alignment mark (not shown) of the second nozzle frame 155 is measured. At this time, when the alignment is not aligned between the substrate 160 and the second nozzle frame 155, by driving the first alignment adjustment actuator 191 to move the tray 173 in the Y-axis direction to a certain degree, Y-axis alignment between the 160 and the second nozzle frame 155 is adjusted. Here, the movement amount for moving the tray 173 in the Y-axis direction is the positioning mark 163 on the substrate 160 measured by each of the four alignment control sensors 195a, 195b, 195c, and 195d. And an average value of the distance difference values between the alignment marks (not shown) of the second nozzle frame 155.

For example, when the second nozzle frame 155 is biased to the right with respect to the substrate 160 to some extent (see the hidden line in FIG. 9A), the first alignment adjusting actuator 191 is driven to drive the substrate 160. By moving the second nozzle frame 155 to the direction of the arrow B by a predetermined degree, the Y-axis alignment between the substrate 160 and the second nozzle frame 155 is adjusted.

On the other hand, since the second nozzle 150 is rotated about the substrate 160 to some extent, there may be a case where the alignment between the second nozzle 150 and the substrate 160 does not match. In this case, in order to align the alignment between the second nozzle 150 and the substrate 160, it is also possible to rotate the second nozzle 150 to some extent.

9B, alignment of the positioning mark 163 and the second nozzle frame 155 on the substrate 160 measured by the first alignment control sensor 195a and the third alignment control sensor 195c, respectively. The difference between the error values between the marks (not shown), and the positioning mark 163 and the second nozzle on the substrate 160 measured by the second alignment control sensor 195b and the fourth alignment control sensor 195d, respectively. By driving the second alignment adjustment actuator 192 to rotate the tray 173 to some extent such that the difference in the error value between the alignment marks (not shown) of the frame 155 is zero, the substrate 160 And the alignment between the second nozzle frame 155.

Here, when the second nozzle frame 155 is inclined counterclockwise with respect to the positioning mark 163 (see the hidden line in FIG. 9B), the second alignment adjustment actuator 192 may move the substrate 160 in the arrow C direction. ) Rotates the second nozzle frame 155 clockwise. On the other hand, when the second nozzle frame 155 is inclined clockwise with respect to the positioning mark 163, the second alignment adjustment actuator 192 rotates the second nozzle frame 155 in the counterclockwise direction.

As such, by precisely controlling the alignment of the second nozzle 150 and the substrate 160 by using two alignment adjusting actuators and four alignment adjusting sensors, the second nozzle 150 may move. An effect of enabling the patterning of a precise thin film on the substrate 160 can be obtained.

Hereinafter, a second embodiment of the thin film deposition apparatus according to the present invention will be described. In the second embodiment of the present invention, other parts are the same as the original embodiment, and the configuration of the gap control member is characteristically different. Therefore, in the present embodiment, detailed descriptions of components using the same reference numerals as those of the first embodiment will be omitted.

10 is a side sectional view showing a thin film deposition apparatus according to a second embodiment of the present invention. 11 is a front view schematically showing a gap control member and an alignment control member of the thin film deposition apparatus according to the second embodiment of the present invention. For convenience of description, in FIG. 11, components other than the second nozzle, the second nozzle frame, and the substrate of the thin film deposition apparatus illustrated in FIG. 10 are omitted.

10 and 11, the thin film deposition apparatus 100 according to the second embodiment of the present invention includes a deposition source 110, a first nozzle 120, a barrier wall assembly 130, and a second nozzle 150. ), A second nozzle frame 155, a substrate 160, and an alignment control member. In addition, the thin film deposition apparatus 100 according to the second embodiment of the present invention further includes a gap control member 280.

As shown in FIG. 12A, the gap control member 280 of the thin film deposition apparatus 100 according to the second exemplary embodiment of the present invention may include a roller attached to four corners of the second nozzle frame 155. 280a). Alternatively, as shown in FIG. 12B, the gap control member 280 of the thin film deposition apparatus 100 according to the second embodiment of the present invention may be attached to four corners of the second nozzle frame 155. It may be provided in the form of (280b). In this case, the radius of the gap control member 280 in the form of a roller 280a or a ball 280b, a radius of an axis (not shown), and the like must be processed very precisely. In addition, when the gap control member 280 in the form of a ball 280b is provided, the part contacting the ball 280b must also be processed with great precision.

As such, the gap control member 280 according to the second embodiment of the present invention provided in the form of a roller 280a or a ball 280b comprises an actuator and a sensor for controlling the gap in the first embodiment of the present invention. Although the precision may be slightly lower than that of the member, the configuration may be simple, easy to manufacture, and the interference problem with the open mask 175 may not occur. In other words, in the second embodiment of the present invention, since the gap control member 280 presses the substrate 160, the open mask 175 may be provided below the gap control member 280. Therefore, the installation condition of the open mask 175 is very free.

Hereinafter, a third embodiment of the thin film deposition apparatus according to the present invention will be described. In the third embodiment of the present invention, the other parts are the same as the original embodiment, and the configuration of the barrier wall assembly is characteristically different.

13 is a perspective view schematically showing a deposition apparatus according to a third embodiment of the present invention.

Referring to FIG. 13, a thin film deposition apparatus 300 according to a third exemplary embodiment of the present invention may include a deposition source 310, a first nozzle 320, a first barrier wall assembly 330, and a second barrier wall assembly ( 340, a second nozzle 350, a second nozzle frame 355, and a substrate 360.

Here, although the chamber is not shown in FIG. 13 for convenience of description, all the components of FIG. 13 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In such a chamber (not shown), a substrate 360, which is a deposition target, is disposed. The deposition source 310, in which the deposition material 315 is received and heated, is disposed on the side of the chamber facing the substrate 360 in the chamber (not shown). The deposition source 310 includes a crucible 311 and a heater 312.

The first nozzle 320 is disposed on one side of the deposition source 310, in detail, on the side facing the substrate 360 in the deposition source 310. In addition, a plurality of first slits 321 are formed in the first nozzle 320 along the Y-axis direction.

One side of the first nozzle 320 is provided with a first barrier wall assembly 330. The first barrier wall assembly 330 includes a plurality of first barrier walls 331 and a first barrier wall frame 332 disposed outside the first barrier walls 331.

One side of the first barrier wall assembly 330 is provided with a second barrier wall assembly 340. The second barrier wall assembly 340 includes a plurality of second barrier walls 341 and a second barrier wall frame 342 disposed outside the second barrier walls 341.

A second nozzle 350 and a second nozzle frame 355 are further provided between the deposition source 310 and the substrate 360. The second nozzle frame 355 is formed in a lattice shape, such as a window frame, and the second nozzle 350 is coupled to the inside thereof. In addition, a plurality of second slits 351 are formed in the second nozzle 350 along the Y-axis direction.

Here, the thin film deposition apparatus 300 according to the third embodiment of the present invention is characterized in that the barrier assembly is separated into the first barrier assembly 330 and the second barrier assembly 340.

In detail, the plurality of first blocking walls 331 may be provided to be parallel to each other along the Y-axis direction. The plurality of first blocking walls 331 may be formed at equal intervals. In addition, each of the first blocking walls 331 is formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction.

In addition, the plurality of second blocking walls 341 may be provided to be parallel to each other along the Y-axis direction. The plurality of second blocking walls 341 may be formed at equal intervals. In addition, each second blocking wall 341 is formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction.

The plurality of first blocking walls 331 and the second blocking walls 341 disposed as described above serve to partition a space between the first nozzle 320 and the second nozzle 350. Here, in the thin film deposition apparatus 300 according to the third embodiment of the present invention, each of the first slits 321 to which the deposition material is sprayed is sprayed by the first blocking wall 331 and the second blocking wall 341. It is characterized in that the deposition space is separated by.

Here, each of the second blocking walls 341 may be disposed to correspond one-to-one with each of the first blocking walls 331. In other words, each of the second blocking walls 341 may be aligned with each of the first blocking walls 331 and disposed in parallel with each other. That is, the first blocking wall 331 and the second blocking wall 341 corresponding to each other are positioned on the same plane. As such, the space between the first nozzle 320 and the second nozzle 350 to be described later is partitioned by the first blocking walls 331 and the second blocking walls 341 arranged in parallel with each other. The deposition material discharged from one first slit 321 is not mixed with the deposition materials discharged from the other first slit 321 and is deposited on the substrate 360 through the second slit 351. In other words, the first blocking walls 331 and the second blocking walls 341 serve to guide the movement path in the Y-axis direction of the deposition material so that the deposition material discharged through the first slit 321 is not dispersed. To perform.

Although the length of the first blocking wall 331 and the width of the second blocking wall 341 in the Y-axis direction are illustrated in the drawing, the spirit of the present invention is not limited thereto. That is, the second blocking wall 341 that requires precise alignment with the second nozzle 350 is relatively thin, whereas the first blocking wall 331 that does not require precise alignment is relatively thin. It will also be possible to form thick, so that the production is easy.

Although not shown in the drawings, the thin film deposition apparatus 300 according to the third embodiment of the present invention may further include a gap control member and an alignment control member. The gap control member in this embodiment may be composed of actuators and sensors in the same manner as in the first embodiment, or may be composed of rollers or balls in the same way as in the second embodiment. Further, the alignment control member in this embodiment may be composed of actuators and sensors in the same manner as in the first embodiment and the second embodiment. Since the gap control member and the alignment control member have been described in detail in the first and second embodiments, detailed description thereof will be omitted in this embodiment.

Hereinafter, a fourth embodiment of the thin film deposition apparatus according to the present invention will be described. The fourth embodiment of the present invention is distinguished from the first embodiment in that it does not have a barrier wall assembly.

14 is a perspective view schematically showing a thin film deposition apparatus according to a fourth embodiment of the present invention, FIG. 15 is a schematic side view of the thin film deposition apparatus of FIG. 14, and FIG. 16 is a schematic view of the thin film deposition apparatus of FIG. 14. Top view.

14, 15, and 16, the thin film deposition apparatus 900 according to the fourth exemplary embodiment of the present invention includes a deposition source 910, a first nozzle 920, and a second nozzle 950. .

Here, although the chambers are not shown in FIGS. 14, 15 and 16 for convenience of description, all the components of FIGS. 14 to 16 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 915 emitted from the deposition source 910 to pass through the first nozzle 920 and the second nozzle 950 to be deposited on the substrate 400 in a desired pattern, a chamber (not shown) is basically provided. The inside must maintain the same high vacuum as the FMM deposition method. In addition, the temperature of the second nozzle 950 should be sufficiently lower than the deposition source 910 temperature (about 100 ° or less). This is because the problem of thermal expansion of the second nozzle 950 due to the temperature can be minimized only when the temperature of the second nozzle 950 is sufficiently low.

In such a chamber (not shown), a substrate 400 which is a deposition target is disposed. The substrate 400 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in the fourth embodiment of the present invention, the substrate 400 is characterized in that the deposition proceeds while moving relative to the thin film deposition apparatus 900.

In detail, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM needs to be enlarged. As a result, there is a problem that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern.

In order to solve this problem, the thin film deposition apparatus 900 according to the fourth embodiment of the present invention is characterized in that the deposition is performed while the thin film deposition apparatus 900 and the substrate 400 move relative to each other. . In other words, the substrate 400 disposed to face the thin film deposition apparatus 900 moves continuously along the Y-axis direction to perform deposition continuously. That is, deposition is performed in a scanning manner while the substrate 400 moves in the direction of arrow A in FIG. 14. Here, although the substrate 400 is shown to be deposited while moving in the Y-axis direction in the chamber (not shown), the spirit of the present invention is not limited thereto, the substrate 400 is fixed and thin film deposition It will also be possible to perform deposition while the device 900 itself moves in the Y-axis direction.

Therefore, in the thin film deposition apparatus 900 of the present invention, the second nozzle 950 can be made much smaller than the conventional FMM. That is, in the thin film deposition apparatus 900 of the present invention, since the substrate 400 moves in the Y-axis direction and performs deposition in a continuous manner, that is, by scanning, the X of the second nozzle 950 The length in the axial direction and the Y-axis direction may be formed to be much smaller than the length of the substrate 400. Thus, since the second nozzle 950 can be made much smaller than the conventional FMM, the second nozzle 950 of the present invention is easy to manufacture. That is, in all processes, such as etching of the second nozzle 950, precision tension and welding operations thereafter, and moving and cleaning operations, the small size of the second nozzle 950 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

As such, in order for deposition to occur while the thin film deposition apparatus 900 and the substrate 400 move relative to each other, the thin film deposition apparatus 900 and the substrate 400 may be spaced apart from each other to some extent. This will be described later in detail.

Meanwhile, a deposition source 910 in which the deposition material 915 is received and heated is disposed on the side of the chamber that faces the substrate 400. As the deposition material 915 stored in the deposition source 910 is vaporized, deposition is performed on the substrate 400.

In detail, the deposition source 910 includes a crucible 911 filled with the deposition material 915 therein and a deposition material 915 filled with the inside of the crucible 911 by heating the crucible 911. One side, specifically, the heater 912 for evaporating to the first nozzle 920 side.

The first nozzle 920 is disposed on one side of the deposition source 910, in detail, the side facing the substrate 400 from the deposition source 910. In addition, a plurality of first slits 921 is formed in the first nozzle 920 along the Y-axis direction, that is, the scan direction of the substrate 400. Here, the plurality of first slits 921 may be formed at equal intervals. The deposition material 915 vaporized in the deposition source 910 passes through the first nozzle 920 and is directed toward the substrate 400, which is the deposition target. As such, when the plurality of first slits 921 is formed on the first nozzle 920 in the Y-axis direction, that is, in the scanning direction of the substrate 400, each second slit of the second nozzle 950 ( The size of the pattern formed by the deposition material passing through the portions 951 is influenced by only one size of the first slit 921 (ie, there is only one first slit 921 in the X-axis direction). Shadows will not occur. In addition, since the plurality of first slits 921 are present in the scanning direction, even if a flux difference between individual deposition source nozzles is generated, the difference is canceled to obtain an effect of maintaining a uniform deposition uniformity.

Meanwhile, a second nozzle 950 and a second nozzle frame 955 are further provided between the deposition source 910 and the substrate 400. The second nozzle frame 955 is formed in a substantially window-like shape, and the second nozzle 950 is coupled to the inside thereof. In addition, a plurality of second slits 951 are formed in the second nozzle 950 along the X-axis direction. The deposition material 915 vaporized in the deposition source 910 passes through the first nozzle 920 and the second nozzle 950 and is directed toward the substrate 400, which is the deposition target. In this case, the second nozzle 950 may be manufactured by etching, which is the same as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, the total number of second slits 951 may be greater than the total number of first slits 921.

Meanwhile, the above-described deposition source 910 and the first nozzle 920 and the second nozzle 950 coupled thereto may be formed to be spaced apart from each other by a certain degree, and the deposition source 910 and the first nozzle coupled thereto ( The 920 and the second nozzle 950 may be connected to each other by the connecting member 935. That is, the deposition source 910, the first nozzle 920, and the second nozzle 950 may be connected by the connection member 935 to be integrally formed with each other. The connection members 935 may guide the movement path of the deposition material so that the deposition material discharged through the first slit 921 is not dispersed. In the drawing, the connecting member 935 is formed only in the left and right directions of the deposition source 910, the first nozzle 920, and the second nozzle 950 to guide only the X-axis direction of the deposition material. For convenience of the present invention, the spirit of the present invention is not limited thereto, and the connection member 935 may be formed in a sealed shape in a box shape to simultaneously guide the X-axis direction and the Y-axis direction movement of the deposition material.

As described above, the thin film deposition apparatus 900 according to the embodiment of the present invention performs deposition while moving relative to the substrate 400, and thus the thin film deposition apparatus 900 is performed on the substrate 400. In order to move relatively, the second nozzle 950 is formed to be spaced apart from the substrate 400 to some extent.

In detail, in the conventional FMM deposition method, a deposition process was performed by closely attaching a mask to a substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device is enlarged, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition apparatus 900 according to the exemplary embodiment of the present invention, the second nozzle 950 is spaced apart from the substrate 400 as the deposition target at a predetermined interval.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

Here, the thin film deposition apparatus 900 according to the fourth embodiment of the present invention includes a gap control member and an alignment control member to maintain a gap Gap between the second nozzle 950 and the substrate 400 at a constant level. At the same time, the second nozzle 950 and the substrate 400 may be precisely aligned. As it has been described in detail in the first embodiment, the detailed description thereof will be omitted.

Hereinafter, a fifth embodiment of the thin film deposition apparatus according to the present invention will be described. The fifth embodiment of the present invention is distinguished from the above-described fourth embodiment in that the plurality of first slits 921 formed in the first nozzle 920 are disposed at a predetermined angle tilt.

17 is a view showing a thin film deposition apparatus according to a fifth embodiment of the present invention. Referring to the drawings, the thin film deposition apparatus according to the fifth embodiment of the present invention includes a deposition source 910, a first nozzle 920, and a second nozzle 950. Here, the deposition source 910 may be a crucible 911 filled with the deposition material 915 therein, and a deposition material 915 filled with the crucible 911 by heating the crucible 911 to the first nozzle 920. And a heater 912 for evaporating to the side. Meanwhile, a first nozzle 920 is disposed on one side of the deposition source 910, and a plurality of first slits 921 are formed in the first nozzle 920 along the Y-axis direction. Meanwhile, a second nozzle 950 and a second nozzle frame 955 are further provided between the deposition source 910 and the substrate 400, and the second nozzle 950 has a plurality of second slits along the X-axis direction. 951 are formed. In addition, the deposition source 910, the first nozzle 920, and the second nozzle 950 are coupled by the connection member 935.

In the present exemplary embodiment, the plurality of first slits 921 formed in the first nozzle 920 are distinguished from the above-described fourth exemplary embodiment in that the plurality of first slits 921 are disposed at a predetermined angle. In detail, the first slit 921 may be composed of two rows of first slits 921a and 921b, and the two rows of first slits 921a and 921b are alternately disposed. In this case, the first slits 921a and 921b may be tilted to be inclined at a predetermined angle on the XZ plane.

That is, in the present embodiment, the first slits 921a and 921b are tilted and disposed at a predetermined angle. Here, the first slits 921a of the first row are tilted to look at the first slits 921b of the second row, and the first slits 921b of the second row are tilted to look at the first slits 921a of the first row. Can be. In other words, the first slits 921a disposed in the left column face the right end of the second nozzle 950, and the first slits 921b disposed in the right row correspond to the left end of the second nozzle 950. It can be arranged to look at.

FIG. 18 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is not tilted in the thin film deposition apparatus according to the present invention, and FIG. 19 is a view illustrating a deposition source nozzle in the thin film deposition apparatus according to the present invention. It is a figure which shows the distribution form of the vapor deposition film deposited on a board | substrate when tilting. 18 and 19, it can be seen that when the first slit is tilted, the thickness of the deposited film formed on both ends of the substrate is relatively increased, thereby increasing the uniformity of the deposited film.

By such a configuration, the difference in film thickness at the center and the end of the substrate is reduced, so that the deposition amount can be controlled so that the thickness of the entire deposition material is uniform, and further, the material utilization efficiency can be increased. .

Here, the thin film deposition apparatus 900 according to the fifth embodiment of the present invention includes a gap control member and an alignment control member to maintain a gap Gap between the second nozzle 950 and the substrate 400 at a constant level. At the same time, the second nozzle 950 and the substrate 400 may be precisely aligned. As it has been described in detail in the first embodiment, the detailed description thereof will be omitted.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100: thin film deposition apparatus 110: deposition source
120: first nozzle 130: barrier wall assembly
131: barrier wall 132: barrier wall frame
150: second nozzle 155: second nozzle frame
160: substrate 180: gap control member
190: alignment control member

Claims (62)

In the thin film deposition apparatus for forming a thin film on a substrate,
Evaporation source;
A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction;
A second nozzle disposed to face the deposition source and having a plurality of second slits formed along the first direction;
A barrier wall assembly having a plurality of barrier walls disposed along the first direction to partition a space between the first nozzle and the second nozzle; And
And at least one of a gap control member for controlling a gap between the second nozzle and the substrate and an alignment control member for adjusting an alignment between the second nozzle and the substrate. The method of claim 1,
And the gap control member controls the gap between the second nozzle and the substrate to be kept constant. The method of claim 1,
The gap control member,
A sensor for measuring the position of the second nozzle relative to the substrate;
And an actuator providing a driving force for moving the second nozzle with respect to the substrate. The method of claim 3, wherein
A positioning mark is formed on the substrate, and the sensor measures the position of the second nozzle with respect to the substrate based on the positioning mark. The method of claim 4, wherein
An open mask is disposed on the substrate, and the open mask is disposed so as not to overlap with the positioning mark. The method of claim 3, wherein
The thin film deposition apparatus,
A base frame; And
And a tray disposed on the base frame and accommodating the second nozzle therein. The method according to claim 6,
And the actuator controls the gap between the second nozzle and the substrate by moving the second nozzle with respect to the tray. The method according to claim 6,
The gap control member,
A first actuator disposed between one end of the second nozzle and the tray to move one end of the second nozzle with respect to the tray;
A second actuator disposed between the other end of the second nozzle facing the one end and the tray to move the other end of the second nozzle with respect to the tray; And
And a third actuator configured to rotate the second nozzle with the axis in the first direction. The method of claim 3, wherein
The actuator is a thin film deposition apparatus, characterized in that the piezoelectric motor (Piezoelectric motor). The method of claim 3, wherein
And the actuator and the sensor perform feedback control in real time on the distance between the second nozzle and the substrate. The method of claim 1,
The gap control member is disposed on both ends of the second nozzle, the thin film deposition apparatus, characterized in that the roller (roller) or ball (ball) disposed in contact with the substrate. The method of claim 1,
And the alignment control member controls the relative position of the second nozzle with respect to the substrate to be kept constant. The method of claim 1,
The alignment control member,
A sensor for measuring the position of the second nozzle relative to the substrate;
And an actuator providing a driving force for moving the second nozzle with respect to the substrate. The method of claim 13,
A positioning mark is formed on the substrate, and the sensor measures a relative position of the second nozzle with respect to the substrate based on the positioning mark. 15. The method of claim 14,
An open mask is disposed on the substrate, and the open mask is disposed so as not to overlap with the positioning mark. The method of claim 13,
The thin film deposition apparatus,
A base frame; And
And a tray disposed on the base frame and accommodating the second nozzle therein. 17. The method of claim 16,
And the actuator adjusts the alignment between the second nozzle and the substrate by moving the tray with respect to the base frame. 17. The method of claim 16,
The alignment control member,
A first actuator disposed between one end of the tray and the base frame to linearly move the tray with respect to the base frame; And
And a second actuator disposed between the other end of the tray abutting the one end and the base frame to rotate the tray with respect to the base frame. The method of claim 13,
The actuator is a thin film deposition apparatus, characterized in that the piezoelectric motor (Piezoelectric motor). The method of claim 13,
And the actuator and the sensor perform feedback control in real time on the alignment between the second nozzle and the substrate. The method of claim 1,
Each of the plurality of blocking walls is formed in a direction perpendicular to the first direction to partition a space between the first nozzle and the second nozzle. The method of claim 1,
The thin film deposition apparatus of claim 1, wherein the plurality of barrier walls are arranged at equal intervals. The method of claim 1,
And the blocking walls and the second nozzle are formed to be spaced apart at a predetermined interval. The method of claim 1,
And the barrier wall assembly is formed to be separated from the thin film deposition apparatus. The method of claim 1,
And the barrier wall assembly comprises a first barrier wall assembly having a plurality of first barrier walls and a second barrier wall assembly having a plurality of second barrier walls. The method of claim 25,
Each of the plurality of first blocking walls and the plurality of second blocking walls is formed in a second direction perpendicular to the first direction to partition a space between the first nozzle and the second nozzle. Thin film vapor deposition apparatus. The method of claim 25,
The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking walls and the plurality of second blocking walls is disposed to correspond to each other. The method of claim 27,
The thin film deposition apparatus of claim 1, wherein the first and second barrier walls corresponding to each other are disposed on the same plane. The method of claim 1,
The deposition material vaporized in the deposition source is deposited on the substrate through the first nozzle and the second nozzle. The method of claim 1,
And the second nozzle is formed to be spaced apart from the substrate at a predetermined interval. The method of claim 1,
And the deposition source, the first nozzle, the second nozzle, and the barrier wall assembly are movable relative to the substrate. The method of claim 31, wherein
And the deposition source, the first nozzle, the second nozzle, and the barrier wall assembly deposit a deposition material on the substrate while moving relative to the substrate. The method of claim 31, wherein
And the deposition source, the first nozzle, the second nozzle, and the barrier wall assembly move relatively along a plane parallel to the substrate. In the thin film deposition apparatus provided in the chamber for forming a thin film on a substrate,
A deposition source formed on one side of the chamber and emitting a deposition material;
A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction;
A second nozzle formed in the chamber to face the deposition source and the first nozzle and having a plurality of second slits formed along a second direction perpendicular to the first direction; And
At least one of a gap control member for controlling a gap between the second nozzle and the substrate and an alignment control member for adjusting an alignment between the second nozzle and the substrate,
The thin film deposition apparatus including the deposition source, the first nozzle, and the second nozzle are formed to be spaced apart from the substrate at a predetermined interval, and the substrate is formed to be relatively movable with respect to the thin film deposition apparatus. Thin film deposition apparatus characterized by the above-mentioned. 35. The method of claim 34,
And the gap control member controls the gap between the second nozzle and the substrate to be kept constant. 35. The method of claim 34,
The gap control member,
A sensor for measuring the position of the second nozzle relative to the substrate;
And an actuator providing a driving force for moving the second nozzle with respect to the substrate. The method of claim 36,
A positioning mark is formed on the substrate, and the sensor measures the position of the second nozzle with respect to the substrate based on the positioning mark. 39. The method of claim 37,
An open mask is disposed on the substrate, and the open mask is disposed so as not to overlap with the positioning mark. The method of claim 36,
The thin film deposition apparatus,
A base frame; And
And a tray disposed on the base frame and accommodating the second nozzle therein. 40. The method of claim 39,
And the actuator controls the gap between the second nozzle and the substrate by moving the second nozzle with respect to the tray. 40. The method of claim 39,
The gap control member,
A first actuator disposed between one end of the second nozzle and the tray to move one end of the second nozzle with respect to the tray;
A second actuator disposed between the other end of the second nozzle facing the one end and the tray to move the other end of the second nozzle with respect to the tray; And
And a third actuator configured to rotate the second nozzle with the axis in the first direction. The method of claim 36,
The actuator is a thin film deposition apparatus, characterized in that the piezoelectric motor (Piezoelectric motor). The method of claim 36,
And the actuator and the sensor perform feedback control in real time on the distance between the second nozzle and the substrate. 35. The method of claim 34,
The gap control member is disposed on both ends of the second nozzle, the thin film deposition apparatus, characterized in that the roller (roller) or ball (ball) disposed in contact with the substrate. 35. The method of claim 34,
And the alignment control member controls the relative position of the second nozzle with respect to the substrate to be kept constant. 35. The method of claim 34,
The alignment control member,
A sensor for measuring the position of the second nozzle relative to the substrate;
And an actuator providing a driving force for moving the second nozzle with respect to the substrate. 47. The method of claim 46,
A positioning mark is formed on the substrate, and the sensor measures a relative position of the second nozzle with respect to the substrate based on the positioning mark. 49. The method of claim 47,
An open mask is disposed on the substrate, and the open mask is disposed so as not to overlap with the positioning mark. 47. The method of claim 46,
The thin film deposition apparatus,
A base frame; And
And a tray disposed on the base frame and accommodating the second nozzle therein. The method of claim 49,
And the actuator adjusts the alignment between the second nozzle and the substrate by moving the tray with respect to the base frame. The method of claim 49,
The alignment control member,
A first actuator disposed between one end of the tray and the base frame to linearly move the tray with respect to the base frame; And
And a second actuator disposed between the other end of the tray abutting the one end and the base frame to rotate the tray with respect to the base frame. 47. The method of claim 46,
The actuator is a thin film deposition apparatus, characterized in that the piezoelectric motor (Piezoelectric motor). 47. The method of claim 46,
And the actuator and the sensor perform feedback control in real time on the alignment between the second nozzle and the substrate. 35. The method of claim 34,
The deposition source, the first nozzle and the second nozzle is a thin film deposition apparatus, characterized in that formed by being coupled to each other by a connecting member. 55. The method of claim 54,
The connecting member is a thin film deposition apparatus, characterized in that for guiding the movement path of the deposition material. 55. The method of claim 54,
And the connection member is formed to seal the deposition source and the space between the first nozzle and the second nozzle from the outside. 35. The method of claim 34,
And the deposition source, the first nozzle, and the second nozzle are integrally formed. 35. The method of claim 34,
And the deposition material is continuously deposited on the substrate while the substrate moves in the first direction with respect to the thin film deposition apparatus. 35. The method of claim 34,
And the second nozzle of the thin film deposition apparatus is smaller than the substrate. 35. The method of claim 34,
In a third direction perpendicular to each of the first direction and the second direction,
And the plurality of first slits are tilted with respect to the third direction so as not to be parallel to the third direction. 64. The method of claim 60,
The plurality of first slits may include two rows of first slits formed along the first direction, and the first slits of the two rows may be tilted in a direction facing each other. Thin film deposition apparatus. 64. The method of claim 60,
The plurality of first slits include two rows of first slits formed along the first direction,
First slits disposed on a first side of the two rows of first slits are disposed to face an end of the second side of the second nozzle,
And the first slits disposed on a second side of the two rows of first slits are disposed to face an end of the first side of the second nozzle.

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