KR100773755B1 - A method for depositing thin film using ALD - Google Patents

A method for depositing thin film using ALD Download PDF

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KR100773755B1
KR100773755B1 KR1020040094603A KR20040094603A KR100773755B1 KR 100773755 B1 KR100773755 B1 KR 100773755B1 KR 1020040094603 A KR1020040094603 A KR 1020040094603A KR 20040094603 A KR20040094603 A KR 20040094603A KR 100773755 B1 KR100773755 B1 KR 100773755B1
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thin film
plasma
chamber
feeding
purge
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KR20060055138A (en
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임홍주
이상규
서태욱
장호승
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주식회사 아이피에스
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Priority to PCT/KR2005/003860 priority patent/WO2006054854A1/en
Priority to TW094140193A priority patent/TW200617199A/en
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract

본 발명은 플라즈마 ALD 박막증착방법에 관한 것으로서, 기판이 안착되어 있는 챔버 내부로 제1반응원을 피딩하는 제1피딩단계와, 제1반응원을 챔버로부터 퍼지하는 제1퍼지단계와, 챔버로 제2반응원을 피딩하는 제2피딩단계와, 챔버로부터 제1반응원과 반응하지 않거나 반응하여 생성된 부산물을 퍼지하는 제2퍼지단계로 구성되는 싸이클을 반복함으로써 기판 상에 박막을 증착하는 ALD 박막증착방법에 있어서, 제1퍼지단계와 제2퍼지단계 중 적어도 하나 이상이 진행되는 동안 챔버 내부로 플라즈마를 인가하는 것을 특징으로 한다. The present invention relates to a plasma ALD thin film deposition method, the first feeding step of feeding a first reaction source into the chamber on which the substrate is seated, the first purge step of purging the first reaction source from the chamber, ALD for depositing a thin film on a substrate by repeating a cycle consisting of a second feeding step of feeding a second reactant and a second purge step of purging by-products generated by not reacting or reacting with the first reactant from the chamber. In the thin film deposition method, the plasma is applied into the chamber while at least one of the first purge step and the second purge step is in progress.

Description

플라즈마 ＡＬＤ 박막증착방법{A method for depositing thin film using ALD}A method for depositing thin film using ALD

도 1은 종래의 ALD 박막증착방법의 공정 시퀀스를 그래프로 도시한 도면,1 is a graph showing a process sequence of a conventional ALD thin film deposition method,

도 2는 본 발명에 따른 플라즈마 ALD 박막증착방법의 제1실시예의 공정 시퀀스를 그래프로 도시한 도면,2 is a graph showing a process sequence of a first embodiment of the plasma ALD thin film deposition method according to the present invention;

도 3은 본 발명에 따른 플라즈마 ALD 박막증착방법의 제2실시예의 공정 시퀀스를 그래프로 도시한 도면.3 is a graph showing a process sequence of a second embodiment of the plasma ALD thin film deposition method according to the present invention.

<도면의 주요부분에 대한 부호 설명><Description of Signs of Major Parts of Drawings>

S1 ... 제1피딩단계S1 ... first feeding step

S2 ... 제1퍼지단계S2 ... first purge step

S3 ... 제2피딩단계S3 ... second feeding step

S4 ... 제2퍼지단계S4 ... second purge step

S2' ... 제1플라즈마인가단계S2 '... first plasma application stage

S4' ... 제2플라즈마인가단계S4 '... Second Plasma Approval Stage

S2a, S2b, S2c ... 제1서브퍼지단계S2a, S2b, S2c ... first sub purge step

S4a, S4b, S4c ... 제2서브퍼지단계S4a, S4b, S4c ... second sub purge step

S2b' ... 제1플라즈마인가단계S2b '... first plasma application step

S4b' ... 제2플라즈마인가단계S4b '... second plasma applying step

본 발명은 플라즈마를 이용한 플라즈마 ALD 박막증착방법에 관한 것이다. The present invention relates to a plasma ALD thin film deposition method using plasma.

ALD 박막증착방법이란, 기판이 내장된 챔버 내부에 다른 종류의 반응원을 교호적으로 피딩 및 퍼지함으로써, 기판상에 원자층 단위로 박막을 증착하는 방법이다. ALD 박막증착방법이 개발된 초기에는 주로 기판을 수백도 이상으로 가열함으로써 반응원에 분해에너지를 인가하는 방식을 채택하였다. The ALD thin film deposition method is a method of depositing thin films in atomic layer units on a substrate by alternately feeding and purging different kinds of reaction sources in a chamber in which the substrate is embedded. In the early days of the development of ALD thin film deposition method, a method of applying decomposition energy to a reaction source was mainly adopted by heating a substrate to several hundred degrees or more.

그러나, 기판을 고온으로 가열할 경우, transistor 를 구성하고 있는 박막의 특성의 변화로 인해 take-off voltage의 변화나 leakage current의 증가 등 소자의 transiter 특성이 변화가 생길 수 있으며, 또한 높은 온도로 인해 이전에 증착된 박막의 결정화로 인해 박막 특성의 변화가 발생하는 등의 문제점이 발생한다.However, when the substrate is heated to a high temperature, the transiter characteristics of the device may change due to a change in the characteristics of the thin film constituting the transistor, such as a change in take-off voltage or an increase in leakage current. The crystallization of the previously deposited thin film causes problems such as changes in thin film properties.

따라서, 증착 온도를 낮추고 다양한 종류의 박막을 증착하기 위하여, 반응원으로 금속유기화합물(metalorganic precursor)을 사용하는 MOCVD( metalorganic chemical vapor deposition) 또는 MOALD(metalorganic atomic layer deposition)가 개발되었다. 그러나, 금속유기화합물은 대부분 증기압이 낮고 분자 사이즈가 크기 때문에, 단위 시간당 증착매수가 적고 고온을 인가하기에 제약이 있었다. 따라서, 보조에너지를 인가하여 반응원의 분해를 도움으로써, 증착온도를 낮추고 증착 속도를 향상시키는 방법이 연구되고 있다.  Therefore, in order to lower the deposition temperature and deposit various types of thin films, metalorganic chemical vapor deposition (MOCVD) or metalorganic atomic layer deposition (MOALD) using a metalorganic precursor (metalorganic precursor) as a reaction source has been developed. However, most of metal organic compounds have a low vapor pressure and a large molecular size, so that the number of depositions per unit time is small and high temperature is applied. Therefore, a method of lowering the deposition temperature and improving the deposition rate by applying auxiliary energy to assist in decomposition of the reaction source has been studied.

이러한 연구결과, 박막을 증착할 때, 보조에너지로서 챔버 내부에 플라즈마를 인가하는 PEALD(plasma-enhanced atomic layer deposition) 나 PAALD(Plasma-assisted ALD)등이 개발되었다. PEALD 나 PAALD 는, 도 1에 도시된 바와 같이, 기판이 안착되어 있는 챔버 내부로 제1반응원을 피딩하는 제1피딩단계(S1), 제1반응원을 챔버로부터 퍼지하는 제1퍼지단계(S2)와, 제2반응원을 피딩하는 제2피딩단계(S3)와, 제1반응원과 반응하지 않은 제2반응원이나 생성된 부산물을 퍼지하는 제2퍼지단계(S4)를 한 싸이클로서 여러번 반복하는 ALD 박막증착방법에 있어서, 제1피딩단계(S1) 및/또는 제2피딩단계(S2)에 진행되는 동안에, 챔버에 플라즈마를 인가하는 제1플라즈마인가단계(S1')나 제2플라즈마인가단계(S3')를 수행함으로써 반응원의 분해가 잘 일어나도록 한 방법이었다. As a result of this research, plasma-enhanced atomic layer deposition (PEALD) or plasma-assisted ALD (PAALD) has been developed to apply plasma to the chamber as auxiliary energy when depositing thin films. PEALD or PAALD, as shown in Figure 1, the first feeding step (S1) for feeding the first reaction source into the chamber on which the substrate is seated, the first purge step for purging the first reaction source from the chamber ( S2), a second feeding step (S3) for feeding the second reactant, and a second purge step (S4) for purging the second reactant or the generated by-products that did not react with the first reactant as one cycle. In the ALD thin film deposition method which is repeated several times, during the first feeding step S1 and / or the second feeding step S2, the first plasma applying step S1 'or the second plasma applying step is applied. The plasma application step (S3 ') was performed to cause decomposition of the reaction source.

그러나, 챔버에 인가된 플라즈마는, 반응원을 기판 표면이 아닌 챔버 내부 공간에서 분해시킴으로써, 완전한 ALD 특성보다는 CVD 특성을 보이게 되는 경우가 많았다.However, the plasma applied to the chamber often exhibited CVD characteristics rather than complete ALD characteristics by decomposing the reaction source in the chamber interior space, not the substrate surface.

또한, 플라즈마가 초기 인가될 때 플라즈마는 불안전한 상태이기 때문에 반응원의 분해상태가 고르게 되지 않았으며, 이에 따라 반응원의 피딩시 인가되는 플라즈마에 의하여 박막의 특성이 나빠진다는 문제점이 있었다.In addition, since the plasma is unstable when the plasma is initially applied, the decomposition state of the reaction source is not uniform. Accordingly, there is a problem that the characteristics of the thin film are deteriorated by the plasma applied when the reaction source is fed.

본 발명은 상기와 같은 문제점을 해결하기 위하여 창출된 것으로서, 기판 표면 이외의 챔버 공간에서 반응원이 분해되지 않도록 함으로써 완벽한 ALD 박막증착을 구현할 수 있도록 하는 플라즈마 ALD 박막증착방법에 관한 것이다. The present invention has been made to solve the above problems, and relates to a plasma ALD thin film deposition method that can implement a perfect ALD thin film deposition by preventing the reaction source is decomposed in the chamber space other than the substrate surface.                         

본 발명의 다른 초기 플라즈마를 인가할 때 플라즈마가 불안전하더라도 기판에 증착되는 박막의 특성이 나빠지는 것을 방지할 수 있는 플라즈마 ALD 박막증착방법을 제공하는 것을 목적으로 한다. Another object of the present invention is to provide a plasma ALD thin film deposition method capable of preventing deterioration of properties of a thin film deposited on a substrate even when the plasma is unstable when the initial plasma is applied.

상기와 같은 목적을 달성하기 위하여, 본 발명에 따른 플라즈마 ALD 박막증착방법은, In order to achieve the above object, the plasma ALD thin film deposition method according to the present invention,

기판이 안착되어 있는 챔버 내부로 제1반응원을 피딩하는 제1피딩단계와, 상기 제1반응원을 상기 챔버로부터 퍼지하는 제1퍼지단계와, 상기 챔버로 제2반응원을 피딩하는 제2피딩단계와, 상기 챔버로부터 상기 제1반응원과 반응하지 않거나 반응하여 생성된 부산물을 퍼지하는 제2퍼지단계로 구성되는 싸이클을 반복함으로써 상기 기판상에 박막을 증착하는 ALD 박막증착방법에 있어서, 상기 제1퍼지단계와 상기 제2퍼지단계 중 적어도 하나 이상이 진행되는 동안 상기 챔버 내부로 플라즈마를 인가하는 것을 특징으로 한다. A first feeding step of feeding a first reaction source into the chamber in which the substrate is seated, a first purging step of purging the first reaction source from the chamber, and a second feeding of a second reaction source into the chamber In the ALD thin film deposition method of depositing a thin film on the substrate by repeating a cycle consisting of a feeding step and a second purge step of purging by-products generated by not reacting or reacting with the first reaction source from the chamber, The plasma is applied into the chamber while at least one of the first purge step and the second purge step is in progress.

본 발명에 있어서. 상기 제1퍼지단계는 1개 또는 적어도 2 개 이상의 제1서브퍼지단계로 구성되고, 상기 플라즈마는 상기 제1서브퍼지단계가 진행되는 동안 상기 챔버 내부로 인가된다. In the present invention. The first purge step is composed of one or at least two first subpurge steps, and the plasma is applied into the chamber during the first subpurge step.

본 발명에 있어서, 상기 제2퍼지단계는 1개 또는 적어도 2 개 이상의 제2서브퍼지단계로 구성되고, 상기 플라즈마는 상기 제2서브퍼지단계가 진행되는 동안 상기 챔버 내부로 인가된다. In the present invention, the second purge step is composed of one or at least two second sub purge steps, and the plasma is applied into the chamber during the second sub purge step.

이하, 본 발명에 따른 플라즈마 ALD 박막증착방법을 첨부된 도면을 참조하여 상세히 설명한다. Hereinafter, a plasma ALD thin film deposition method according to the present invention will be described in detail with reference to the accompanying drawings.

본 발명에 따른 플라즈마 ALD 박막증착방법은, 제1피딩단계와, 제1퍼지단계와, 제2피딩단계와, 제2퍼지단계로 구성되는 싸이클을 반복함으로써 기판상에 박막을 증착하며, 이때, 제1퍼지단계와 제2퍼지단계 중 적어도 하나 이상이 진행되는 동안 챔버 내부로 플라즈마를 인가한다. 이를 상세히 설명하면 다음과 같다. In the plasma ALD thin film deposition method according to the present invention, a thin film is deposited on a substrate by repeating a cycle consisting of a first feeding step, a first purge step, a second feeding step, and a second purge step. The plasma is applied into the chamber while at least one of the first purge step and the second purge step is in progress. This will be described in detail as follows.

도 2는 본 발명에 따른 플라즈마 ALD 박막증착방법의 제1실시예의 공정 시퀀스를 그래프로 도시한 도면이다. 2 is a graph showing a process sequence of the first embodiment of the plasma ALD thin film deposition method according to the present invention.

도시된 바와 같이, 본 발명에 따른 플라즈마 ALD 박막증착방법의 제1실시예는, 기판이 안착되어 있는 챔버 내부로 제1반응원을 피딩하는 제1피딩단계(S1)와, 제1반응원을 챔버로부터 퍼지하는 제1퍼지단계(S2)와, 챔버로 제2반응원을 피딩하는 제2피딩단계(S3)와, 챔버로부터 제1반응원과 반응하지 않거나 반응하여 생성된 부산물을 퍼지하는 제2퍼지단계(S4)로 구성되는 싸이클을 반복함으로써 기판상에 박막을 증착한다. 상기한 공정 시퀀스를 따라 1 싸이클이 진행될 경우, 기판상에 1 원자층 또는 1 분자층이 형성된다. 이때, 챔버를 퍼지시키기 위한 가스로서 Ar 이나 N2 등 불활성가스를 사용한다. As shown, the first embodiment of the plasma ALD thin film deposition method according to the present invention, the first feeding step (S1) for feeding the first reaction source into the chamber on which the substrate is seated, and the first reaction source A first purging step S2 for purging from the chamber, a second feeding step S3 for feeding a second reaction source into the chamber, and a second purging by-product generated by not reacting with or reacting with the first reaction source from the chamber; The thin film is deposited on the substrate by repeating the cycle consisting of two purge steps (S4). When one cycle proceeds according to the above process sequence, one atomic layer or one molecular layer is formed on the substrate. At this time, an inert gas such as Ar or N2 is used as a gas for purging the chamber.

이때, 제1퍼지단계(S2)와 제2퍼지단계(S4) 중 적어도 하나 이상이 진행되는 동안에 챔버 내부로 플라즈마를 인가하는 플라즈마인가단계를 수행한다. 본 실시예에서 플라즈마인가단계는, 제1퍼지단계(S2)와 동시에 진행되는 제1플라즈마인가단계(S2')와, 제2퍼지단계(S4)와 동시에 진행되는 제2플라즈마인가단계(S4')로 구성된다. In this case, a plasma applying step of applying a plasma into the chamber while performing at least one of the first purge step S2 and the second purge step S4 is performed. In the present embodiment, the plasma applying step may include a first plasma applying step S2 ′ that is performed simultaneously with the first purge step S2 and a second plasma applying step S4 ′ that proceeds simultaneously with the second purge step S4. It is composed of

여기서, 제1반응원과 제2반응원은 일반적으로 TMA, TEMAHf, TEMASi, PET 등 대부분의 liquid source나 NH3, H2, SiH4, SiH2Cl2 등 gas등 ALD에 사용되는 모든 반응원을 사용할 수 있다. In this case, the first and second reactants may generally use most of the liquid sources such as TMA, TEMAHf, TEMASi, PET, and all reactants used in ALD such as NH3, H2, SiH4, SiH2Cl2, and gas.

도 3은 본 발명에 따른 플라즈마 ALD 박막증착방법의 제2실시예의 공정 시퀀스를 그래프로 도시한 도면이다. 3 is a graph showing a process sequence of a second embodiment of the plasma ALD thin film deposition method according to the present invention.

도시된 바와 같이, 본 발명에 따른 플라즈마 ALD 박막증착방법의 제2실시예는, 기판이 안착되어 있는 챔버 내부로 제1반응원을 피딩하는 제1피딩단계(S1)와, 제1반응원을 챔버로부터 퍼지하는 제1퍼지단계(S2)와, 챔버로 제2반응원을 피딩하는 제2피딩단계(S3)와, 챔버로부터 제1반응원과 반응하지 않거나 반응하여 생성된 부산물을 퍼지하는 제2퍼지단계(S4)로 구성되는 싸이클을 반복함으로써 기판상에 박막을 증착한다. 상기한 공정 시퀀스를 따라 1 싸이클이 진행될 경우, 기판상에 1 원자층 또는 1 분자층이 형성된다. 이때, 챔버를 퍼지시키기 위한 가스로서 Ar 이나 N2 등 불활성가스를 사용한다. As shown, the second embodiment of the plasma ALD thin film deposition method according to the present invention, the first feeding step (S1) for feeding the first reaction source into the chamber on which the substrate is seated, and the first reaction source A first purging step S2 for purging from the chamber, a second feeding step S3 for feeding a second reaction source into the chamber, and a second purging by-product generated by not reacting with or reacting with the first reaction source from the chamber; The thin film is deposited on the substrate by repeating the cycle consisting of two purge steps (S4). When one cycle proceeds according to the above process sequence, one atomic layer or one molecular layer is formed on the substrate. At this time, an inert gas such as Ar or N2 is used as a gas for purging the chamber.

이때, 제1퍼지단계는 1개 또는 적어도 2 개 이상의 제1서브퍼지단계로 구성되고, 플라즈마는 제1서브퍼지단계가 진행되는 동안 챔버 내부로 인가된다. 또한, 제2퍼지단계도 1개 또는 적어도 2 개 이상의 제2서브퍼지단계로 구성되고, 플라즈마는 제2서브퍼지단계가 진행되는 동안 챔버 내부로 인가된다.At this time, the first purge step is composed of one or at least two first sub-purge steps, and the plasma is applied into the chamber while the first sub-purge step is in progress. In addition, the second purge step is also composed of one or at least two second subpurge steps, and the plasma is applied into the chamber during the second subpurge step.

본 실시예에서는, 제1퍼지단계(S2)는 3 개의 제1서브퍼지단계(S2a)(S2b)(S2c)로 이루어지고, 제2퍼지단계(S4)는 3 개의 제2서브퍼지단계(S4a)(S4b)(S4c)로 이루어진다. 예를 들면, 첫 번째 제1서브퍼지단계(S2a)에 있어 서 500sccm의 Ar 로 퍼지하고, 두 번째 제1서브퍼지단계(S2b)에 있어서 1000sccm의 Ar 으로 퍼지하며, 세 번째 제1서브퍼지단계(S2c)에 있어서 퍼지는 펌핑(pumping)으로 할 수 있다. 그 이외에도 다른 단계 조합도 가능하다. In the present embodiment, the first purge step S2 is composed of three first sub-purge steps S2a, S2b, and S2c, and the second purge step S4 is three second sub-purge steps S4a. ) S4b and S4c. For example, purge with Ar of 500 sccm in the first sub-purge step (S2a), purge with Ar of 1000 sccm in the second first sub-purge step (S2b), and third sub-purge step (S2a). In S2c, the purge can be pumped. Other combinations of steps are also possible.

이때, 플라즈마인가단계는, 제1퍼지단계에 있어서 두 번째 제1서브퍼지단계(S2b)와 동시에 진행되는 제1플라즈마인가단계(S2b')와, 제2퍼지단계에 있어서 두 번째 제2서브퍼지단계(S4b)와 동시에 진행되는 제2플라즈마인가단계(S4b')로 구성된다. In this case, the plasma applying step may include a first plasma applying step (S2b ′) that proceeds simultaneously with the second first sub purge step (S2b) in the first purge step, and a second second sub purge in the second purge step. A second plasma application step S4b 'proceeds simultaneously with the step S4b.

여기서 플라즈마는 서브퍼지단계중 하나가 진행될 때만 인가되었으나, 상기한 여러 퍼지단계중 일부 또는 전체에 대하여 플라즈마를 발생할 수 있음은 물론이다.In this case, the plasma is applied only when one of the sub-purge steps is performed, but it is a matter of course that the plasma may be generated for some or all of the various purge steps.

이와 같이, 각각의 제1퍼지단계와 제2퍼지단계동안에 플라즈마를 인가함으로써, 기판 표면 이외의 챔버 내부 공간에서 반응원이 분해되지 않도록 할 수 있으며, 초기 플라즈마의 불안전성에 의하여 박막의 특성이 나빠지는 것을 방지할 수 있다. In this way, by applying plasma during each of the first purge step and the second purge step, it is possible to prevent the reaction source from being decomposed in the chamber internal space other than the substrate surface, and the characteristics of the thin film are deteriorated due to the instability of the initial plasma. Can be prevented.

이와 같이, 본 발명은 플라즈마를 발생시키는 시기를 반응원의 피딩시가 아닌 퍼지시에 진행시킴으로써, 반응원이 플라즈마에 의해 분해될 수 있는 가능성을 최소화할 수 있다. As described above, the present invention can minimize the possibility that the reaction source can be decomposed by the plasma by advancing the plasma generation time at the time of purging rather than feeding the reaction source.

또, 불활성가스가 플라즈마 영역을 지나 여기되어 기판 위에 공급되게 되고, 이는 기판 위에서 이루어지는 반응원의 표면 반응을 활성화시켜 우수한 박막을 얻을 수 있게 된다. In addition, the inert gas is excited through the plasma region to be supplied onto the substrate, which activates the surface reaction of the reaction source formed on the substrate to obtain an excellent thin film.

또한, 기판 위에 떨어지는 불활성가스는 박막 내의 탄소(C) 등 불순물을 제거해 주게 되고 이는 궁국적으로 박막의 특성을 향상시키게 된다. 그러므로 본 발명에 따른 플라즈마 ALD 박막증착방법에 따라 제작된 박막은 탄소등의 불순물 양이 적고, dense 한 박막을 얻을 수 있다.In addition, the inert gas falling on the substrate removes impurities such as carbon (C) in the thin film, which ultimately improves the characteristics of the thin film. Therefore, the thin film produced by the plasma ALD thin film deposition method according to the present invention can obtain a dense thin film having a small amount of impurities such as carbon.

본 발명은 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

상술한 바와 같이 본 발명에 따른 플라즈마 ALD 박막증착방법에 따르면, 피딩단계가 아닌 퍼지단계에서 플라즈마를 챔버에 인가함으로써, 기판 표면 이외의 챔버 내부 공간에서 반응원이 분해되는 것을 막을 수 있어 완벽한 ALD 박막증착을 가능하게 할 수 있으며, 또한 초기 플라즈마의 불안전성에 의하여 박막의 특성이 나빠지는 것을 방지할 수 있다. As described above, according to the plasma ALD thin film deposition method according to the present invention, by applying the plasma to the chamber in the purge step rather than the feeding step, it is possible to prevent the decomposition of the reaction source in the chamber internal space other than the substrate surface, perfect ALD thin film It is possible to enable deposition and to prevent the deterioration of characteristics of the thin film due to the instability of the initial plasma.

또, 불활성가스를 여기시킴으로써 기판 위에서 이루어지는 반응원의 표면 반응을 활성화시켜 줄 뿐아니라 여기된 불활성 가스의 퍼지 능력을 향상시킬 수 있어서 이로 인해 퍼지 효율이 증가하여 최종적으로 우수한 박막을 얻을 수 있다. In addition, by exciting the inert gas, not only the surface reaction of the reaction source formed on the substrate can be activated, but also the purge capacity of the excited inert gas can be improved, thereby increasing the purge efficiency and finally obtaining an excellent thin film.

그리고, 여기된 불활성가스는 박막 내의 탄소등의 불순물을 제거해줌으로써 궁극적으로 박막의 특성을 향상시키게 된다는 효과가 있다.In addition, the excited inert gas has an effect of ultimately improving the characteristics of the thin film by removing impurities such as carbon in the thin film.

Claims (3)

기판이 안착되어 있는 챔버 내부로 제1반응원을 피딩하는 제1피딩단계와, 상기 제1반응원을 상기 챔버로부터 퍼지하는 제1퍼지단계와, 상기 챔버로 제2반응원을 피딩하는 제2피딩단계와, 상기 챔버로부터 상기 제1반응원과 반응하지 않거나 반응하여 생성된 부산물을 퍼지하는 제2퍼지단계로 구성되는 싸이클을 반복함으로써 상기 기판상에 박막을 증착하는 ALD 박막증착방법에 있어서, A first feeding step of feeding a first reaction source into the chamber in which the substrate is seated, a first purging step of purging the first reaction source from the chamber, and a second feeding of a second reaction source into the chamber In the ALD thin film deposition method of depositing a thin film on the substrate by repeating a cycle consisting of a feeding step and a second purge step of purging by-products generated by not reacting or reacting with the first reaction source from the chamber, 상기 제1퍼지단계와 상기 제2퍼지단계 중 적어도 어느 하나의 진행과 동시에 상기 챔버 내부로 플라즈마를 인가하는 플라즈마 인가단계를 더 포함하여, 상기 제1반응원과 제2반응원 중 적어도 어느 하나가 상기 기판 표면에서 분해되도록 하는 것을 특징으로 하는 플라즈마 ALD 박막증착방법.The method may further include applying a plasma into the chamber simultaneously with at least one of the first purge step and the second purge step, wherein at least one of the first and second reactants Plasma ALD thin film deposition method characterized in that the decomposition on the surface of the substrate. 삭제delete 삭제delete
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