JPWO2019235076A1 - Electronic control device - Google Patents

Abstract

We will improve the reliability and performance of semiconductor integrated circuit devices that can change logic circuit information such as FPGAs and electronic control devices that mount them. In an electronic control device equipped with an integrated circuit capable of changing logic circuit information, a plurality of temperature sensors are arranged on the die, and the die characteristic acquisition circuit information for acquiring the die characteristics of the integrated circuit is written to obtain the temperature. The feature is that the characteristic distribution of the die is acquired by measuring the temperature distribution on the die using a sensor, and the actual operation circuit information is written according to the characteristic distribution of the die.

Description

The present invention relates to an electronic control device using an LSI capable of rewriting logic circuit information, and more particularly to an in-vehicle electronic control device that requires high reliability.

FPGA (Field-Programmable Gate Array), PLD (Programmable Logic Device), etc. are known as LSIs that can rewrite logic circuit information. The high integration of LSIs that can rewrite these logic circuit information is rapidly advancing, and the importance of ensuring their reliability is increasing.

In addition, it is also necessary to improve the resistance to failure in the market of products equipped with these LSIs.
Furthermore, with the increase in the number of mounted transistors and the miniaturization of semiconductor processes, the influence of variations in transistors, wiring, etc. is also increasing.

In addition, heat generation is also increasing due to an increase in the amount of calculation due to an increase in the circuit scale, an improvement in the operating frequency, and an increase in the processing capacity, and the influence on the heat of the semiconductor is also increasing.

As a background technology in this technical field, for example, there is a technology such as Patent Document 1. Patent Document 1 describes "a configuration in which an integrated circuit having a plurality of duplicate processor cores and a thermal sensor are mounted, and the operating frequency of the processor core is adjusted based on a corresponding temperature signal received from the thermal sensor". There is.

JP-A-2007-0277709

As described above, with the expansion of applications of LSIs that can rewrite logic circuit information such as FPGAs, further improvement of reliability and performance of those LSIs has become an important issue. In particular, in the automobile field, advanced driver assistance systems (ADAS) and automated driving systems (Autmated Driving Systems) are rapidly becoming widespread, and the reliability of FPGAs installed in in-vehicle electronic control devices is increasing. Improvement and high performance are required.

The configuration of Patent Document 1 is for arranging temperature sensors at the same location on the duplicate processor core and adjusting the operating frequency of the duplicate processor according to the measured temperature, and does not change the circuit configuration based on the temperature information.

The present invention has been made in view of these problems, and an object of the present invention is to grasp the characteristic distribution of an LSI die (Die) in which logic circuit information can be rewritten, and to obtain high reliability in a region having good characteristics. By arranging circuits that require the same operating speed, the reliability and performance of LSIs can be improved.

Further, by grasping the defective area on the die and configuring the circuit without using the defective area, the reliability of the LSI can be improved and the die defect can be relieved during operation. The reliability is also improved in the circuit information rewriting in.

That is, the purpose is to improve the reliability and performance of a semiconductor integrated circuit device (LSI) capable of changing logic circuit information such as FPGA and an electronic control device equipped with the semiconductor integrated circuit device (LSI).

In order to solve the above problems, the present invention arranges a plurality of temperature sensors on a die in an electronic control device equipped with an integrated circuit capable of changing logic circuit information, and acquires the characteristics of the die of the integrated circuit. The circuit information for acquiring the die characteristics for the purpose is written, the characteristic distribution of the die is acquired by measuring the temperature distribution on the die using the temperature sensor, and the actual circuit information for operation is written according to the characteristic distribution of the die. It is characterized by performing a process of incorporating.

According to the present invention, by grasping the die characteristic distribution and arranging the circuit for the main purpose operation according to the characteristics of each die region, the reliability is improved and the defect region is not used. By doing so, defects due to defects on the die are relieved, and high-speed operation is possible and power consumption is reduced by arranging the circuit according to the operating characteristics.

As a result, it is possible to improve the reliability and performance of a semiconductor integrated circuit device (LSI) capable of changing logic circuit information such as FPGA and an electronic control device equipped with the semiconductor integrated circuit device (LSI).

Issues, configurations and effects other than those described above will be clarified by the description of the following embodiments.

It is a figure which shows the structure of the electronic control apparatus which concerns on one Embodiment of this invention. It is a flowchart which shows the activation process of the electronic control apparatus which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit structure at the time of the die characteristic distribution detection of the LSI which can rewrite the logic circuit information. It is a figure which shows the example of the die characteristic distribution of the LSI which can rewrite logic circuit information, and the circuit structure at the time of detecting a defect area. It is a figure which shows the example which arranges the circuit function according to the die characteristic distribution of the LSI which can rewrite the logic circuit information. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the structure of the image processing apparatus for vehicle which carries the electronic control apparatus which concerns on one Embodiment of this invention. It is a figure which conceptually shows the operation sequence of the image processing apparatus for vehicle which carries the electronic control apparatus which concerns on one Embodiment of this invention. It is a figure which shows the example of the die characteristic distribution of an LSI which can rewrite the logic circuit information acquired by the die characteristic acquisition circuit. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the die characteristic distribution of an LSI which can rewrite the logic circuit information acquired by the die characteristic acquisition circuit. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention. It is a figure which shows the example of the circuit use area of the LSI which concerns on one Embodiment of this invention.

Hereinafter, examples of the present invention will be described with reference to the drawings. In each drawing, the same components are designated by the same reference numerals, and the detailed description of overlapping portions will be omitted.

The semiconductor integrated circuit device (LSI) and the electronic control device according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 7. FIG. 1 shows the configuration of the electronic control device of this embodiment.

Reference numeral 101 denotes a semiconductor integrated circuit device (LSI) capable of rewriting logic circuit information such as FPGA, and has a plurality of circuit components, a plurality of temperature monitoring elements, a multiplexer 301, an A / D converter 311 and a register 321 inside. It is installed.

111-11N, 121-12N, 131-13N, 141-14N, 1M1-1MN are circuit components of an LSI that can rewrite logic circuit information, for example, a lookup table (LUT) for configuring logic. ), A flip-flop (FF) whose configuration can be changed, a latch storage element, a RAM / ROM block, a wiring element, a switch matrix for switching the connection of the wiring element, an arithmetic block, a communication interface block, and the like.

The 211 to 21X, 221-22X, 2Y1 to 2YX are temperature monitoring elements, for example, thermal diodes, which are connected to the A / D converter 311 via a multiplexer 301. In the case of a thermal diode, both ends of the element are connected to a current source and GND (not shown), respectively, and at the time of temperature measurement, the applied current causes a voltage drop according to the temperature.

Reference numeral 301 denotes a multiplexer, which selects and switches the temperature monitoring element to be connected to the A / D converter 311.

Reference numeral 311 is an A / D converter, which measures the voltage across each of the temperature monitoring elements 211 to 21X, 221-22X, and 2Y1 to 2YX connected via the multiplexer 301, and stores the result in the register 321. The data stored in the register 321 is referred to and used by the microprocessor 331.

A non-volatile memory 401 that stores circuit information such as die characteristic acquisition circuit information 411, normal operation circuit information 421-42L, circuit use area information 431-43L, and die characteristic acquisition history information 441 is connected to the microcontroller 331. Has been done.

FIG. 2 is a flowchart showing an operation at the time of starting the electronic control device of the present embodiment shown in FIG.

First, in the state S901, the power of the electronic control device is turned on (On), and in the state S902, the microcontroller 331 is stored in the non-volatile memory 401 for die characteristic acquisition circuit information (die characteristic detection circuit data). 411 is written in the LSI 101 in which the logic circuit information can be rewritten.

The die characteristic acquisition circuit information 411 has a configuration as shown in FIG. 3 in the LSI 101 in which the logic circuit information can be rewritten. 511 to 51A, 521 to 52A, 5B1 and 5B2 are die characteristic acquisition circuit blocks having the same configuration and the same layout, and each of the LSI 101s whose logic circuit information can be rewritten according to the contents of the die characteristic acquisition circuit information 411. It is configured using circuit components (111-11N, 121-12N, 131-13N, 141-14N, 1M1-1MN in FIG. 1).

Next, in the state S903, the initial state of each region of the die is observed using the temperature monitoring elements 211 to 21X, 221-22X, 2Y1 and 2Y2. The temperature of each region of the die is obtained by sequentially switching the temperature monitoring elements 211 to 21X, 221-22X, 2Y1 and 2Y2 by the multiplexer 301 and measuring the voltage by the A / D converter 311. The result is stored in register 321 and read by the microcontroller 331.

Subsequently, in the state S904, the die characteristic detection circuit is operated to generate heat in each region of the die characteristic acquisition circuit blocks 511 to 51A, 521 to 52A, 5B1 and 5B2. In these circuit blocks, the circuit operates based on the supplied data, and the operation generates heat. The circuit components 111-11N, 121-12N, 131-13N, 141-14N, 1M1-1MN of the LSI 101 whose logic circuit information can be rewritten are arranged in a specific arrangement (predetermined interval), and are configured by using these. It is desirable that the temperature monitoring elements 211 to 21X, 221-22X, 2Y1 and 2Y2 are arranged at specific intervals (predetermined intervals) at the same position in the die characteristic acquisition circuit block.

Reference numeral 501 denotes a data supply ROM and its control circuit configured by using circuit components of LSI 101 capable of rewriting logic circuit information, and each die characteristic acquisition circuit block 511-51A, 521 via a bus. The same data is supplied to ~ 52A, 5B1 and 5B2.

As described above, the die characteristic acquisition circuit information 411 constitutes the same circuit function in each circuit usage area (each functional block). This makes it possible to apply the same arithmetic load to the die characteristic acquisition circuit blocks 511 to 51A, 521 to 52A, 5B1 and 5B2 having the same configuration and the same layout.

By the way, there is a slight difference in heat generation due to the variation in each circuit region. Since heat generation is small in the region with good characteristics, the thermal margin (thermal budget) is large, and high-speed operation and high-load operation are possible. On the other hand, in a region where the amount of heat generated is relatively large, the thermal margin (thermal budget) becomes small, and it becomes difficult to raise the operating frequency or apply a high load. Further, if the heat generation is too much, it is suspected that the heat is generated due to a short circuit failure, and conversely, if the heat generation is too small, it is suspected that the circuit is not operating normally due to disconnection or the like.

Therefore, in the state S905, the temperature distribution data of each region after the operation of the die characteristic acquisition circuit blocks 511 to 51A, 521 to 52A, 5B1, and 5B2 is acquired.

This heat generation is observed using the temperature monitoring elements 211 to 21X, 221-22X, 2Y1 and 2Y2. Similar to the state S903, the multiplexer 301 switches the temperature monitoring elements 211 to 21X, 221-22X, 2Y1 and 2Y2 in order, the A / D converter 311 measures the voltage, and the data stored in the register 321 is used as the microcontroller 331. The temperature of each region of the die is obtained by reading with.

If this temperature measurement (acquisition of temperature data) is performed after a long time has passed since the operation of the electronic control device was stopped, the temperature of the original die is constant over the entire area, so the state of S903. There is no problem even if the temperature is simply compared by eliminating (acquisition of initial temperature distribution data). However, if sufficient time has not passed since the stop and the temperature of the entire die is not constant, the accuracy of temperature measurement can be improved by comparing the temperature before and after the die characteristic distribution grasping process. It is possible.

Further, for example, as shown in FIG. 4, when a defect region 541 exists in the die characteristic acquisition circuit block 522 and a short-circuit failure occurs to cause abnormal heat generation, the temperature monitor element 222 generates abnormal heat generation. When it is detected and read out by the A / D converter 311, it shows a higher temperature than the ambient temperature monitoring element, and the microcontroller 331 detects an abnormality. Then, the area used by the die characteristic acquisition circuit block 522 is stored as an unusable area, and at the same time, the area used is stored in the die characteristic acquisition history information 441 of the non-volatile memory 401 as an unusable area.

On the contrary, when the die characteristic acquisition circuit block is not operating due to disconnection or the like, an abnormally low temperature is detected in the temperature monitoring element. In this case as well, it is stored as unusable, and at the same time, it is stored as an unusable area in the die characteristic acquisition history information 441 of the non-volatile memory 401.

At the same time as these processes, the microcontroller 331 writes the temperature information of the area for each temperature monitoring element as the history information to the die characteristic acquisition history information 441 of the non-volatile memory 401.

Further, the microcontroller 311 reads and compares the past information from the die characteristic acquisition history information 441 of the non-volatile memory 401, and determines the characteristics of the region for each temperature monitoring element. For example, a region in which heat generation has been low is determined as a region having good characteristics. On the other hand, the region where the heat generation suddenly increases and the region where the heat generation increase is accelerating are judged as regions where the reliability is doubtful.

Next, in the state S906, the circuit information for actual operation according to the die characteristics is written to the LSI 101 in which the logic circuit information can be rewritten.

At this time, as shown in FIG. 5, data having circuit information corresponding to the characteristics of each die region is selected and written. In other words, in the region with good die characteristics, there are circuit blocks of high importance, such as important control circuit blocks, circuit blocks that require high-speed operation, circuit blocks that have a high computational load, and circuit blocks that include critical paths. The assigned circuit information is selected. On the other hand, in the defective area and the area where the reliability is doubtful, the circuit block is not allocated as the use-protected area (write-protected area), or the circuit in which the circuit that does not affect even if a problem occurs is arranged. Information is selected.

Further, in the region where the die characteristics are normal (average region), circuit information of not so high importance, for example, a circuit block having a margin in operation timing or a circuit block having a low heat generation amount is arranged. Is selected and the logic circuit information is written to the rewritable LSI 101.

That is, according to the characteristics of each region of the die, the circuit use region 601 arranged in the region with good die characteristics, the circuit use region 602 arranged in the region where the die characteristics are normal (average), and the defective region are not used. The die area is selectively partitioned, such as the used area 603.

As shown in FIG. 5, the non-volatile memory 401 holds a plurality of pre-prepared circuit information for actual operation from 421 to 42 L of circuit information for normal operation. Further, in the circuit use area information 431 to 43L, the area allocation information on the LSI 101 that can rewrite the logic circuit information used by the normal operation circuit information 421 to the normal operation circuit information 42L is recorded. In addition, the importance and priority of each area arrangement are recorded.

Based on this area arrangement information, circuit information suitable for the above conditions is selected by the microcontroller 331 from each of them, and the corresponding normal operation circuit information is selected from 421 to 42 L, and the logic circuit is selected. The information is written in the rewritable LSI 101 to form a circuit.

For example, when the circuit information 421 for normal operation has the circuit block arrangement as shown in FIG. 6, the defect region 541 is included in the circuit block 652 and does not satisfy the condition, and the circuit information for normal operation is satisfied. Cannot be selected.

On the other hand, when the circuit information 42L for normal operation has the circuit block arrangement as shown in FIG. 7, the defect area 541 is unused, and this information can be selected to rewrite the logic circuit information. Since it is written in the LSI 101, the circuit can be configured without using the defective region portion, and higher reliability can be ensured.

As described above, according to the semiconductor integrated circuit device (LSI) capable of changing the logic circuit information of this embodiment and the electronic control device on which the semiconductor integrated circuit device (LSI) is mounted, a plurality of temperature sensors are arranged on the die to form an integrated circuit. The die characteristic acquisition circuit information for acquiring the die characteristics is written, and the die characteristic distribution is acquired by measuring the temperature distribution on the die using a temperature sensor, and the actual die characteristic distribution is obtained according to the die characteristic distribution. Performs the process of writing the operation circuit information.

Then, in the area where the characteristics of the die are good, the circuit function that requires reliability, the circuit function that requires high-speed operation, the circuit function including the critical path, and the circuit function that requires a high computational load are selectively written in each circuit use area. Include.

As a result, it is possible to improve the reliability and performance of the semiconductor integrated circuit device (LSI) capable of changing the logic circuit information and the electronic control device on which the semiconductor integrated circuit device (LSI) is mounted.

In the above description, an example in which the electronic control device is composed of an LSI 101, a microcontroller 331, and a non-volatile memory 401 capable of rewriting logic circuit information such as an FPGA has been described, but the FPGA (LSI 101), the microcontroller 331, and the like have been described. Even in the case of a system LSI (SOC) in which the non-volatile memory 401 is formed as an integrated circuit on the same die (chip), the same effect as in this embodiment can be obtained.

In addition, the acquisition of die characteristics is performed when the operation mode of the electronic control device is changed, when a problem is detected in the diagnostic information, when an abnormal temperature change is detected, or when the running state of the vehicle equipped with the electronic control device is changed. By executing this, it is also possible to perform a predictive diagnosis of the electronic control device.

In addition, the logic circuit information can be changed by setting the priority of the circuit in advance for each actual operation circuit information (for each circuit function block for actual operation) and setting the abnormal die area as a write-protected area. When the circuit area is insufficient, the logic circuit information to be written may be selected according to the priority. As a result, it is possible to prevent the semiconductor integrated circuit device (LSI) capable of changing the logic circuit information and the electronic control device on which the semiconductor integrated circuit device (LSI) is mounted from stopping more than necessary, and the electronic control device can be operated stably.

A semiconductor integrated circuit device (LSI) and an electronic control device according to a second embodiment of the present invention will be described with reference to FIGS. 8 to 13I. FIG. 8 shows the configuration of the electronic control device of this embodiment, and is an example in which the electronic control device of Example 1 is applied to an in-vehicle image processing device. The description of the same contents as in the first embodiment will be omitted.

Reference numeral 801 is an electronic control device equipped with an LSI 101 capable of rewriting logic circuit information, and provides support information during traveling or backward parking based on input image information.

811 to 815 are camera units. The 811 and 812 are arranged in front of the vehicle (front part), and mainly acquire video information during normal driving. The 813 and 814 are arranged on the left and right sides of the vehicle, and acquire left and right images during traveling and parking. The 815 is arranged at the rear (rear part) of the vehicle, and acquires an image of the approaching vehicle or the like from the rear during traveling, an image of parking when reversing, and the like. The camera units 81 to 815 are connected to an electronic control device 801 equipped with an LSI 101 capable of rewriting logic circuit information, transmit image data to the electronic control device 801 and from the electronic control device 801 to the camera units 81 to 815. Settings, etc. are controlled.

The 821 is a control unit higher than the electronic control device 801 and receives and processes driving support information during driving and parking obtained by analyzing the video data input from the camera units 81 to 815 by the electronic control device 801. At the same time, the electronic control device 801 is informed of the traveling state such as when traveling or when parking backward.

The operation of the electronic control device 801 will be described with reference to FIG. FIG. 9 conceptually shows an operation sequence of an in-vehicle image processing device equipped with the electronic control device shown in FIG.

First, by turning the ignition key of a vehicle (not shown), the power is also turned on to the electronic control device 801 in the state S911, and the activation is started.

Subsequently, in the state S912, similarly to the first embodiment, the die characteristic detection circuit information 411 is written from the non-volatile memory 401 to the LSI 101 in which the logic circuit information such as the FPGA can be rewritten via the microcontroller 331, and the state S913 is written. The initial temperature distribution data of the LSI 101 whose logic circuit information can be rewritten is acquired in.

Next, in the state S914, the die characteristic acquisition circuit written in the LSI 101 whose logic circuit information can be rewritten is operated, and the same amount of circuit operation load is applied to each region on the die to generate heat.

Next, in the state S915, the temperature distribution data after the operation of the die characteristic acquisition circuit of the LSI 101 whose logic circuit information can be rewritten is acquired, and the characteristics of each region on the die are determined from the temperature change as in the first embodiment. .. At this time, if there is abnormal heat generation or the like, the information is written in the die characteristic acquisition history information 441 in the non-volatile memory 401 as an area where a defect exists. After that, since it is activated from the ignition key On, it transitions to the state S916 in preparation for the subsequent running.

In the state S916, the traveling circuit configuration information is written according to the characteristics of each region on the die.

For example, it is assumed that the characteristics of each region on the die acquired in the state S915 have the configuration shown in FIG. 10, and the traveling circuit information has the following configuration.

Function A (high importance): 1 Function B (medium importance): 2 Function C (low importance): 2 The high importance function is the die characteristic of LSI 101 that can rewrite logic circuit information. Suppose everything must be placed in a good area.

In this state, when the traveling circuit information 451 to 45J held in the non-volatile memory 401 is written to the LSI 101 in which the logic circuit information can be rewritten, the areas occupied on the LSI 101 are FIGS. 11A to 11I, respectively. It is assumed that the area information is held in the traveling circuit use area information 461 to 46J, respectively.

In this case, in FIG. 11A, which is the traveling circuit use area information 461, the circuit use area 731 occupied by the function A is all or a part of the (average) areas 701, 702, 704, and 705 with normal die characteristics. You are using the area of. However, function A is of high importance and it is not desirable that the die characteristics be located in the normal (average) region.

Next, in FIG. 11B, the circuit region 741 occupied by the function B uses all or a part of the (average) regions 701, 702, 704, and 705 having normal die characteristics, and the function A The occupied circuit area 731 uses a part of the (average) areas 704 and 705 with normal die characteristics and a part of the areas 712 and 713 with good die characteristics.

Regarding the circuit area 741 occupied by the function B, the function B is in the importance, and it is no problem that the die characteristics are arranged in the normal (average) area. However, with respect to the circuit area 731 occupied by the function A, the function A is of high importance and is arranged over a region where the die characteristics are normal (average) and a region where the die characteristics are good. Not desirable.

Regarding FIG. 11C, the circuit region 741 occupied by the first function B uses all or a part of the (average) regions 701, 702, 704, and 705 having normal die characteristics. The circuit area 742 occupied by the second function B uses a part of the (average) areas 704 and 705 with normal die characteristics and a part of the areas 712 and 713 with good die characteristics. ing. These have a medium importance of function B, and there is no particular problem.

Further, the circuit area 731 occupied by the function A uses all or a part of the areas 712 to 715 having good die characteristics. Function A is of high importance, and it is arranged in a region where the die characteristics are good, which is a desirable configuration.

However, as for the circuit area 751 occupied by the function C, the area 721 including the defect area is used. This means that the circuit does not operate normally, which is also not a desirable configuration.

In such a determination, the microcontroller 331 sequentially determines the traveling circuit usage area information 461 to 46J on the non-volatile memory 401 based on the characteristics of each area on the die obtained in the state S915. , Determine the driving circuit data to be used.

As a result of sequentially performing the determination in this way, it is assumed that the arrangement shown in FIG. 11H is found. This is because the circuit area 741 occupied by the first function B uses all or a part of the (average) areas 701, 702, 704, and 705 with normal die characteristics, and two. The circuit area 742 occupied by the function B of the eye uses a part of the (average) areas 704 and 705 with normal die characteristics and a part of the areas 712 and 713 with good die characteristics. .. The circuit area 731 occupied by the function A uses all or a part of the areas 712 to 715 having good die characteristics, and the circuit area 751 occupied by the first function C has normal die characteristics. The circuit area 752 in which the second function C occupies a part of the (average) area 706 to 708 and a part of the area 711 having good die characteristics has a normal die characteristic (average). N) All or part of the regions 707 to 709 and the region 716 having good die characteristics are used. Further, the area 721 including the defective area is an unused area.

This is because the function A having a high importance is arranged in the region where the die characteristics are good, and the region including the defect region is not used for the function B and the function C having a medium or low importance. This is the desired arrangement.

When the arrangement of FIG. 11H is the travel circuit use area information 46J, the data of the travel circuit information 45J corresponding to the data is selected, and the microcontroller 331 writes the logic circuit information to the rewritable LSI 101. The state transitions to S917, and the traveling image data processing is performed.

In the state S917, the image input from the camera units 81 to 815 is subjected to arithmetic processing by a circuit composed of the traveling circuit information 45J written in the LSI 101 capable of rewriting the logic circuit information, and the microcontroller 331 is operated. The information resulting from the processing is transmitted to the upper control unit 821 via the above.

In this state, when an instruction to shift to the reverse parking mode is received from the upper control unit 821, the transition to the state S912 is performed, and the state S915 is executed again to detect the die characteristic. It is desirable that this operation be performed while the vehicle is stopped.

Subsequently, in order to shift to the reverse parking mode, the state shifts to S918, and the backward parking operation circuit configuration information is written according to the characteristics of each region on the die.

For example, it is assumed that the characteristics of each region on the die acquired up to the state S915 are detected as the die characteristic distribution shown in FIG. 12, and the reverse parking circuit is configured as follows.

Function D (high importance): 1 Function E (medium importance): 1 Function F (low importance): 2 Note that there is no problem if at least one function F is installed. ..

In this state, when the backward parking circuit information 471 to 47K held in the non-volatile memory 401 is written to the LSI 101 in which the logic circuit information can be rewritten, the areas occupied on the LSI 101 are shown in FIGS. 13A to 13I, respectively. It is assumed that the area information is held in the backward parking circuit use area information 481 to 48K, respectively.

In this case, as in the case of the state S916, the characteristics of each area on the die and the back parking circuit use area information stored in the non-volatile memory 401 are compared, and the circuit information to be used is selected.

In FIG. 13A, which is the back parking circuit use area information 481, the circuit use area 761 occupied by the function D includes the areas 701, 704, and 705 where the die characteristics are normal (average) and the areas where the die characteristics are good. I am using 717. However, function D is a highly important function, and it is not preferable that the die characteristics are arranged in a place including a normal (average) region.

With respect to FIG. 13B, the circuit area 771 occupied by the function E is an area 701, 704, 705 with normal die characteristics and a region 717 with good die characteristics, and the circuit occupied by the function D. Region 761 uses regions 712 to 715 with good die characteristics. The circuit area 781 occupied by the first function F is a circuit area occupied by the second function F in the (average) areas 703, 706, 710 with normal die characteristics and the area 711 with good die characteristics. 782 uses regions 707 to 709 with normal die characteristics and regions 716 with good die characteristics.

This is because the function D having a high importance is arranged in the region where the die characteristics are good, and the region including the defect region is not used for the function E and the function F having a medium or low importance. This is the desired arrangement.

Therefore, by selecting the data of the backward parking circuit information 472 corresponding to the backward parking circuit use area information 482 that stores the arrangement of FIG. 13B, the microcontroller 331 shifts the logic circuit information to the LSI 101 that can be rewritten. Write.

When reliability is important, it is also possible to refer to the die characteristic acquisition history information 441 in the non-volatile memory 401 and compare it with the die characteristics acquired in the past. As shown in FIG. 10, the (average) region 710 with normal die characteristics is a region detected as a defective region 721 at the time of initial startup, and can be left unused because it is unreliable. .. In this case, the backward parking circuit information 472, which is the arrangement shown in FIG. 13B, cannot be used. Instead, the arrangement of FIG. 13H is selected.

In the arrangement of FIG. 13H, the circuit area 771 occupied by the function E is the area 701, 704, 705 with normal die characteristics and the area 717 with good die characteristics, and is occupied by the function D. The circuit area 761 uses regions 712 to 715 with good die characteristics, and the circuit area 781 occupied by the function F includes regions 707 to 709 with normal die characteristics and regions 716 with good die characteristics. Is used. The area 710 with normal die characteristics (average), which was the area including the defective area in the past, should be made an unused area by reducing the number of function F mounted, and the configuration should be made with more emphasis on reliability. Is possible.

In this example, it was possible to reduce the number of function Fs, which are relatively less important, and arrange the circuit components, but there are many defective areas, and the characteristics of the die area are not satisfied. If there is no used area information (traveling circuit used area information 461-46J or backward parking circuit used area information 481-48K) stored in the volatile memory 401 according to the mode, the micro is used. The controller 331 notifies the upper control unit 821 of the error.

On the other hand, if the circuit information can be written without any problem, the state transitions to the state 919, and the image input from the camera units 81 to 815 is written in the LSI 101 in which the logic circuit information can be rewritten. The circuit composed of 472 or 47K performs backward parking image data processing different from that of the traveling circuit, and transmits the information resulting from the processing to the upper control unit 821 via the microcontroller 331.

In this embodiment, the traveling circuit information 451-45J and the backward parking circuit information 471-47K recorded in the non-volatile memory 401 include circuit information for the entire LSI 101 whose logic circuit information can be rewritten, respectively. However, it is not limited to that, for example, circuit information arranged in multiple areas is prepared for each function, and according to the characteristics of each area on the die and the priority of each function, A method may be adopted in which the arrangement of each function to be used is determined, they are combined, and the logic circuit information is collectively written to the rewritable LSI 101. In that case, the circuit usage area information corresponding to the circuit information arranged in the plurality of areas for each function is held in the non-volatile memory 401.

Further, when the temperature monitoring elements 211 to 21X, 221-22X, 2Y1 to 2YX, the multiplexer 301, the A / D converter, and the 321 register are used to process the image data for traveling or the image data for backward parking. When the temperature of each area of the LSI 101 where the logic circuit information of the above can be rewritten is monitored and diagnostic information that there is a possibility of thermal runaway exceeding a certain temperature is detected, or when there is a sudden temperature rise, a circuit failure occurs. If suspected, notify the upper control unit of an error, transition to state S912, acquire the characteristics of each area on the die again, and re-arrange according to the characteristics of the area. Is also possible.

Further, in this embodiment, the configuration for switching between the traveling circuit and the backward parking circuit has been described by taking an in-vehicle image processing device as an example, but the configuration is not limited to this, and an electron equipped with an LSI capable of rewriting logic circuit information. It is applicable to control devices.

The present invention is not limited to the above-described examples, and includes various modifications. For example, the above-described embodiment has been described in detail in order to explain the present invention in an easy-to-understand manner, and is not necessarily limited to the one including all the described configurations. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Further, it is possible to add / delete / replace a part of the configuration of each embodiment with another configuration.

The present application also has the following features [Appendix 1] to [Appendix 8].

[Appendix 1]
The characteristic distribution of the die is determined based on the temperature information measured by using the temperature sensor.

[Appendix 2]
The die characteristics are acquired when the power of the electronic control device is turned on.

[Appendix 3]
It is characterized in that the acquisition of the die characteristics is performed before the circuit configuration change of the actual operation circuit of the integrated circuit whose logic circuit information can be changed.

[Appendix 4]
The die characteristics are acquired when the operation mode of the electronic control device is changed.

[Appendix 5]
When a problem is detected in the diagnostic information in the electronic control device, the die characteristics are acquired.

[Appendix 6]
The die characteristics are acquired when an abnormal temperature change is detected in the temperature information detected by the temperature sensor mounted on the integrated circuit whose logic circuit information can be changed.

[Appendix 7]
The die characteristics are acquired when the vehicle equipped with the electronic control device is stopped.

[Appendix 8]
The die characteristics are acquired when the traveling state of the vehicle equipped with the electronic control device is changed.

101 ... Semiconductor integrated circuit device (LSI) capable of rewriting logic circuit information
111-11N ... Circuit components (for LSIs that can rewrite logic circuit information) 121-12N ... Circuit components (for LSIs that can rewrite logic circuit information) 131-13N ... (for LSIs that can rewrite logic circuit information) ) Circuit components 141 to 14N ... (for LSIs that can rewrite logic circuit information) Circuit components 1M1 to 1MN ... (for LSIs that can rewrite logic circuit information) Circuit components 211 to 21X ... Temperature monitoring elements 221 to 22X ... Temperature monitoring element 2Y1-2YX ... Temperature monitoring element 301 ... multiplexer 311 ... A / D converter 321 ... Register 331 ... Microcontroller 401 ... Non-volatile memory 411 ... Die characteristic acquisition circuit information 421-42L ... For normal operation Circuit information 431-43L ... Circuit usage area information 441 ... Die characteristic acquisition history information 451-45J ... Driving circuit information 461-46J ... Driving circuit usage area information 471-47K ... Backward parking circuit information 481-48K ... Backward parking Circuit used area information 501 ... ROM for data supply and its control circuit 511-51A ... Die characteristic acquisition circuit block 521-52A ... Die characteristic acquisition circuit block 5B1-5B2 ... Die characteristic acquisition circuit block 541 ... Defect area 601 ... Circuit use area arranged in a region with good die characteristics 602 ... Circuit use area arranged in a region with normal die characteristics (average) 603 ... Unused area due to defective area 701-709 ... Normal die characteristics (Average) area 711-716 ... Area with good die characteristics 721 ... Area including defect area 731 ... Circuit usage area occupied by function A in an LSI that can rewrite logic circuit information 741,742 ... Logic circuit information Circuit use area occupied by function B in the rewritable LSI 751, 752 ... Circuit use area occupied by function C in the LSI in which the logic circuit information can be rewritten 761 ... Function in the LSI in which the logic circuit information can be rewritten Circuit usage area occupied by D 771 ... Circuit usage area occupied by function E in an LSI that can rewrite logic circuit information 781-782 ... Circuit usage area occupied by function F in an LSI that can rewrite logic circuit information 801 … Electronic control device equipped with LSI that can rewrite logic circuit information 811-815… Camera 821… Upper control unit

Claims (15)

In an electronic control device equipped with an integrated circuit that can change logic circuit information
Place multiple temperature sensors on the die,
Write the die characteristic acquisition circuit information for acquiring the die characteristics of the integrated circuit,
Obtain the characteristic distribution of the die by measuring the temperature distribution on the die using a temperature sensor.
An electronic control device characterized in that it performs a process of writing actual operation circuit information according to the characteristic distribution of a die. The electronic control device according to claim 1, wherein the die characteristic acquisition circuit information has the same circuit function in each functional block. The electronic control device according to claim 1 to 2, wherein a circuit function that requires reliability is written in a region where the characteristics of the die are good. The electronic control device according to claim 1 to 2, wherein a circuit function that requires high-speed operation is written in a region where the characteristics of the die are good. The electronic control device according to claim 1 to 2, wherein a circuit function including a critical path is written in a region where the characteristics of the die are good. The electronic control device according to claim 1 to 2, wherein a circuit function that applies a high computational load is written in a region where the characteristics of the die are good. The electronic control device according to any one of claims 1 to 6, wherein the temperature sensors are provided on the die at specific intervals. The electronic control device according to any one of claims 1 to 7, wherein the characteristic distribution of the die is determined based on a temperature change before and after operating the die characteristic acquisition circuit. The electronic control device includes a non-volatile memory.
At least one of the temperature data acquired at the time of acquiring the die characteristics, the temperature change before and after operating the die characteristic acquisition circuit, and the die characteristics for each circuit use area is written and recorded in the non-volatile memory. The electronic control device according to any one of claims 1 to 8, wherein the electronic control device is characterized. When the temperature change of the die region acquired at the time of acquiring the die characteristics is different from the history information recorded in the non-volatile memory, the claim is characterized in that the die region is set as a write-protected region of a highly important functional circuit block. Item 9. The electronic control device according to item 9. Any of claims 1 to 10, wherein when the die characteristic is acquired, if there is a die region having an abnormality in the acquired characteristic, the die region is set as a write-protected region of the actual operation circuit information. The electronic control device according to item 1. The circuit priority is set for each circuit function block for actual operation, and priority is given when the integrated circuit area where the logic circuit information can be changed is insufficient because the abnormal die area is set as the write-protected area. The electronic control device according to any one of claims 1 to 11, wherein the logic circuit information to be written is selected according to the degree. The electronic control device stores each information of the die characteristic acquisition circuit information, the traveling circuit information, the traveling circuit used area information, the backward parking circuit information, the backward parking circuit used area information, and the die characteristic acquisition history information. The non-volatile memory, the non-volatile memory, and a microcontroller connected to the integrated circuit are provided.
The electronic control device according to claim 1, wherein the running state of a vehicle equipped with the electronic control device is determined based on video data input from a plurality of cameras. A portion of the plurality of cameras is arranged at the front and rear of the vehicle.
The claim is characterized in that a camera arranged at the front acquires image data during normal driving, and a camera arranged at the rear acquires image data during reverse parking to determine the traveling state of the vehicle. 13. The electronic control device according to 13. The electronic control device is connected to an upper control unit via the microprocessor, and the electronic control device is connected to an upper control unit.
The electronic control device according to claim 13 to 14, wherein the traveling state of the vehicle determined by the electronic control device is transmitted to the higher-level control unit.

Images