JPWO2019039432A1 - Substrate processing method, computer storage medium, and substrate processing system - Google Patents

Abstract

This is a substrate treatment method in which a predetermined treatment is performed on a polymerized substrate in which an ultraviolet-transmissive support substrate and a substrate to be processed are bonded via a bonding member whose adhesiveness is lowered by irradiation with ultraviolet rays, and ultraviolet rays are emitted from the support substrate side. The irradiation step of irradiating, the fixing step of attaching a dicing tape to the surface of the substrate to be processed opposite to the bonding member and fixing it to the dicing frame, the removal step of removing the support substrate from the polymerized substrate, and the above-mentioned The peeling step of peeling the bonding member from the polymerized substrate is included, the fixing step is performed after the irradiation step, and the peeling step is performed after the removal step.

Description

(Cross-reference of related applications)
The present application claims priority based on Japanese Patent Application No. 2017-161936 filed in Japan on August 25, 2017, the contents of which are incorporated herein by reference.

The present invention provides a substrate processing method, a computer storage medium, and a substrate processing for performing a predetermined process on a polymerized substrate in which a supporting substrate and a substrate to be processed which are transparent to ultraviolet light are bonded via a bonding member whose adhesiveness is reduced by irradiation with ultraviolet light. Regarding the system.

In recent years, in a semiconductor device manufacturing process, a semiconductor wafer having a plurality of devices such as electronic circuits formed on its surface (hereinafter referred to as a wafer) is ground and polished on the back surface of the wafer to thin the wafer. Is being done. For the purpose of suppressing cracks during the grinding and polishing processes, for example, as shown in FIG. 1, a wafer reinforcing support substrate S is bonded to the surface of the wafer W. In addition, the wafer W after the grinding and the grinding process has a dicing tape D attached to the back surface of the wafer W for the purpose of suppressing damage to the wafer W and the like, and the dicing tape D is formed into an annular shape through the dicing tape D. It is fixed to the dicing frame F. In addition, the wafer W to which the dicing tape D is attached is divided into individual chips by dicing the laser dicing and then expanding the dicing tape D (Patent Document 1). reference).

By the way, the supporting substrate S for reinforcing the wafer needs to be removed from the wafer W before the expanding process.
In the method for removing the supporting substrate S disclosed in Patent Document 2, the supporting substrate S is made transparent to ultraviolet light, and the bonding member B having the property of lowering the adhesive force by irradiating ultraviolet light to bond the supporting substrate S and the wafer W. Is used. Then, in the detaching method, the wafer W in a state of being bonded to the supporting substrate S via the bonding member B and being fixed to the dicing frame F via the dicing tape D is irradiated with ultraviolet rays from the supporting substrate S side. Then, the adhesive force of the bonding member B is reduced and the supporting substrate S is removed from the wafer W.

Japanese Patent Laid-Open No. 2007-67278 Japanese Patent Laid-Open No. 2013-236016

However, the bonding member B also needs to be separated from the wafer W before the expanding process, but the method disclosed in Patent Document 2 has the following problems. That is, when the bonding member B is irradiated with ultraviolet rays from the support substrate S side, the portion of the dicing tape D outside the wafer W is also irradiated, and the adhesive force of the portion of the dicing tape D irradiated with ultraviolet rays is reduced. When the joining member B is peeled off, the peripheral portion of the wafer W is peeled off from the dicing tape D and is damaged.

The above-mentioned problem can be avoided by providing a special light-shielding member that covers the portion of the dicing tape D outside the wafer W during the irradiation of ultraviolet rays. In addition, the process of aligning the parts during maintenance increases, resulting in high cost.
Patent Document 1 makes no disclosure or suggestion in this respect.

The present invention has been made in view of the above circumstances, and when the joining member that joins the substrate to be processed and the ultraviolet transparent support substrate is separated from the substrate to be processed, the peripheral portion of the substrate to be processed is damaged. The purpose is to prevent the low cost.

One embodiment of the present invention for solving the above problem is a substrate treatment for performing a predetermined treatment on a superposed substrate in which a supporting substrate and a substrate to be treated which are transparent to ultraviolet rays are joined through a joining member whose adhesiveness is reduced by irradiation with ultraviolet rays. An irradiation step of irradiating ultraviolet rays from the supporting substrate side, a fixing step of attaching a dicing tape to a surface of the substrate to be processed opposite to the bonding member, and fixing the dicing frame, It includes a removing step of removing the supporting substrate from the substrate and a peeling step of peeling the bonding member from the superposed substrate, the fixing step is performed after the irradiation step, and the peeling step is performed after the removing step.

In the substrate processing method of one embodiment of the present invention, the dicing tape is attached after the ultraviolet irradiation, and the ultraviolet rays are not applied to the dicing tape during the ultraviolet irradiation. Therefore, it is possible to prevent the peripheral edge portion of the processing substrate from being damaged when the joining member is peeled from the processing substrate after the dicing tape is attached. Further, since no special member is used, the above-mentioned defect can be prevented at low cost.

According to another aspect of the present invention, a readable computer storage medium storing a program that runs on a computer of a control unit that controls the substrate processing system so that the substrate processing method is executed by the substrate processing system. Is.

According to another aspect of the present invention, there is provided a substrate processing system for performing a predetermined process on a polymerized substrate in which an ultraviolet-transparent support substrate and a substrate to be processed are bonded via a bonding member whose adhesiveness is deteriorated by ultraviolet irradiation. Before the dicing tape is attached, an irradiation unit that irradiates ultraviolet rays from the supporting substrate side and a detaching unit that detaches the supporting substrate from the superposed substrate are provided.

According to one embodiment of the present invention, at the time of peeling a bonding member for bonding a substrate to be processed and a supporting substrate that is transparent to ultraviolet light from the substrate to be processed, it is possible to prevent the peripheral portion of the substrate to be processed from being damaged at low cost. be able to.

It is explanatory drawing which shows the outline of a structure of an overlapping wafer. It is a top view which shows typically the outline of a structure of the substrate processing system concerning 1st Embodiment of this invention. It is explanatory drawing which shows the outline of a structure of the ultraviolet irradiation device of FIG. It is a figure which shows the mode of the superposition wafer at the time of the main processes in the substrate processing method of 1st Embodiment of this invention. It is explanatory drawing which shows the outline of the other structural example of an ultraviolet irradiation device. It is a top view which shows typically the outline of a structure of the substrate processing system concerning 2nd Embodiment of this invention. It is explanatory drawing which shows the outline of a structure of the ultraviolet irradiation device of FIG. It is a figure which shows the mode of the superposition wafer at the time of the main processes in the substrate processing method of 2nd Embodiment of this invention. It is a figure which shows the mode of the superposition wafer at the time of the main processes in the substrate processing method of 3rd Embodiment of this invention. It is a top view which shows typically the outline of a structure of the substrate processing system concerning other embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and duplicate description will be omitted.

(First embodiment)
First, the configuration of the substrate processing system according to the first embodiment of the present invention will be described. FIG. 2 is a plan view schematically showing the outline of the configuration of the substrate processing system 1 according to the first embodiment. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined, and the Z-axis positive direction is defined as the vertically upward direction.

In the substrate processing system 1 of the present embodiment, as shown in FIG. 1, a processing target wafer W as a processing target substrate and a glass substrate S as an ultraviolet transparent supporting substrate are bonded via a bonding tape B as a bonding member. The bonded overlapped wafer T is processed. Hereinafter, in the wafer W to be processed, a surface bonded to the glass substrate S via the bonding tape B is referred to as a “bonding surface Wj”, and a surface opposite to the bonding surface Wj is referred to as a “non-bonding surface Wn”. Similarly, in the glass substrate S, the surface bonded to the processing target wafer W via the bonding tape B is referred to as “bonding surface Sj”, and the surface opposite to the bonding surface Sj is referred to as “non-bonding surface Sn”. In addition, in the following description, a state in which the glass substrate S is removed from the overlapped wafer T may be referred to as an overlapped wafer T. Further, in the substrate processing system 1 of the present embodiment, as will be described later, a mounting process of attaching the dicing tape D to the overlapped wafer T and fixing it to the dicing frame F is performed. In the following description, the state of being fixed to the dicing frame F may also be referred to as a superposed wafer T.

The joining tape B is a UV (Ultraviolet) peelable double-sided tape having a property that the adhesiveness is lowered by irradiation with ultraviolet rays, and a commercially available one can be used. As a commercially available UV release type double-sided tape, SELFA-SE and SELFA-MP manufactured by Sekisui Chemical Co., Ltd. are known. In the following description, the case where the joining tape B is used as the joining member will be described, but an adhesive or the like may be used as long as it has a function of lowering the adhesiveness by irradiating ultraviolet rays. ..

The wafer W to be processed is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. The wafer W to be processed has a plurality of electronic circuits (devices) formed on the bonding surface Wj, and the non-bonding surface Wn is thinned.

The glass substrate S has a diameter substantially the same as the diameter of the processing target wafer W or a diameter larger than the processing target wafer W, supports the processing target wafer W, and transmits ultraviolet rays. In the following, a case where a glass substrate is used as the supporting substrate will be described, but another substrate may be used as long as it has ultraviolet transparency.

The dicing tape D fixes the wafer W to be processed to the dicing frame F, has adhesiveness only on one surface, and has higher expandability than the bonding tape B. The dicing tape D is, for example, a UV peeling type single-sided tape, and a commercially available one can be used. As a commercially available UV peelable single-sided tape, D-175 manufactured by Lintec Co., Ltd. is known.
The dicing frame F fixes the dicing tape D attached to the wafer W to be processed, and is made of metal, for example.

As shown in FIG. 2, the substrate processing system 1 stores an unprocessed overlapped wafer T in a cassette C, and carries in a plurality of overlapped wafers T into the substrate processing system 1 from the outside in cassette units; A processing station for storing the processed overlapped wafers T in a cassette C and carrying out a plurality of overlapped wafers T from the substrate processing system 1 to the outside in a cassette unit, and processing for performing a dicing process on the processed wafers W. A device 4, a delivery device 5 for delivering the overlapped wafer T, an ultraviolet irradiation device 6 for performing an ultraviolet treatment on the overlapped wafer T, and a treatment device 7 for performing the above-mentioned mounting treatment, treatment for removing the glass substrate S, and the like. The carrying-in station 2, the processing apparatus 4, the delivery apparatus 5, and the processing apparatus 7 are connected to a carrying station 8 for carrying the overlapped wafer T. The processing device 4, the delivery device 5, and the ultraviolet irradiation device 6 are arranged in this order in the X-axis direction in the region on the Y-axis direction positive side of the transfer station 8. The carry-in station 2 is arranged so as to face the processing device 4 in a region on the Y axis direction negative side of the transfer station 8. The carry-out station 3 and the processing device 7 are arranged side by side in this order in the Y-axis direction on the X-axis positive direction side of the transfer station 8.

The carry-in station 2 is provided with a cassette mounting table 20. In the illustrated example, a plurality of, for example, two cassettes C can be mounted on the cassette mounting table 20 in a line in the X-axis direction.

The carry-out station 3 also has the same configuration as the carry-in station 2. That is, the carry-out station 3 is provided with the cassette mounting table 30, and the two cassettes C can be mounted on the cassette mounting table 30 in a line in the X-axis direction, for example.

In the processing device 4, the wafer W to be processed is subjected to a dicing process using a laser. A known device is used as the processing device 4 that performs the dicing process.

The transfer device 5 is for transferring the overlapped wafer T between a transfer arm 120 of the ultraviolet irradiation device 6 described later and a transfer arm 83 of the transfer station 8 described later, and the overlapped wafer T is placed thereon. A delivery table (not shown) is provided.

In the ultraviolet irradiation device 6, an ultraviolet irradiation process of irradiating ultraviolet rays from the glass substrate S side of the overlapped wafer T is performed. The configuration of this ultraviolet irradiation device 6 will be described later.

In the processing device 7, the fixing part 70, the removing part 71, and the peeling part 72 are provided in the same device.
In the fixing section 70, a mounting process for fixing the overlapped wafer T to the dicing frame via the dicing tape is performed. In the removing section 71, a removing process of removing the glass substrate S from the overlapped wafer T is performed. In the peeling unit 72, a peeling process for peeling the bonding tape B attached to the processing target wafer W is performed. Then, the processing apparatus 7 conveys the superposed wafer T, which has been subjected to various treatments, to the cassette C of the unloading station 3. Known devices are used for the mounting process, the removing process, and the peeling process performed in the processing device 7.

The transfer station 8 is provided with a wafer transfer area 80. The wafer transfer area 80 is provided with a wafer transfer device 82 that is movable on a transfer path 81 extending in the X-axis direction. The wafer transfer device 82 has a transfer arm 83 that is movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. With the transfer arm 83, the carry-in station 2, the processing device 4, the delivery device 5, and the processing device. The overlapped wafer T can be transferred between the seven.

The substrate processing system 1 described above is provided with the control unit 9. The control unit 9 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the overlapped wafer T in the substrate processing system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing devices and transfer devices so as to realize wafer processing described later in the substrate processing system 1. The program is recorded in a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical desk (MO), or memory card. However, the storage medium H may be installed in the control unit 9.

Next, the configuration of the ultraviolet irradiation device 6 described above will be described. FIG. 3 is a side view showing the outline of the configuration of the ultraviolet irradiation device 6.

The ultraviolet irradiation device 6 includes a wafer chuck 100, an ultraviolet irradiation unit 110, and a transfer arm 120.

The wafer chuck 100 holds the overlapped wafer T by suction holding or the like, and is provided in a region below the ultraviolet irradiation device 6.
Further, in the lower region of the ultraviolet irradiation device 6, a guide rail 101 is provided that extends along the X-axis direction from a region adjacent to the delivery device 5 in FIG. 1 to a region below the ultraviolet irradiation unit 110. The wafer chuck 100 is configured to be movable on the guide rail 101 and is movable to two processing positions P1 and P2.
In the present embodiment, the first processing position P1 is a position on the negative side in the X-axis direction with respect to the ultraviolet irradiation unit 110, and the second processing position P2 is a position below the ultraviolet irradiation unit 110.

The ultraviolet irradiation unit 110 has an ultraviolet light source 111 that irradiates ultraviolet rays, and is provided in an upper region of the ultraviolet irradiation device 6. The ultraviolet light source 111 is supported by a supporting member (not shown), and in this example, irradiates ultraviolet rays downward.

The transfer arm 120 is for transferring the overlapped wafer T, is provided in a substantially central region in the vertical direction of the ultraviolet irradiation device 6, and is capable of adsorbing the overlapped wafer T and the articulated arm portion 121 that can be swung and expanded and contracted. And a holding portion 122 for holding. The transfer arm 120 is configured to be movable on a guide rail 123 extending in the X-axis direction, and is also configured to be movable in the horizontal direction, the vertical direction, and around the vertical axis. The transfer arm 120 can transfer the overlapped wafer T between the transfer device 5 and the wafer chuck 100 at the first processing position P1.

Next, the wafer processing of the present embodiment performed using the substrate processing system 1 configured as above will be described. FIG. 4 is a diagram showing a state of the overlapped wafer T during the main steps of the wafer processing.

First, the cassette C containing a plurality of overlapping wafers T is placed on the cassette placing table 20 of the carry-in station 2. In the cassette C, the non-bonding surface Sn of the glass substrate S is held so that the non-bonding surface Sn of the glass substrate S faces upward so that the non-bonding surface Sn of the glass substrate S is attracted when the superposed wafer T is transported. .. Then, the non-bonding surface Sn of the glass substrate S of the overlapped wafer T in the cassette C is adsorbed and held by the transfer arm 83 of the wafer transfer device 82, and the overlapped wafer T is taken out and transferred to the processing device 4 (step S1). : Transport). At this time, the dicing process is performed from the non-bonding surface Wn side of the processed wafer W of the overlapped wafer T so that the non-bonded surface Wn of the processed wafer W faces upward. It is inverted by a reversing device (not shown) in the processing device 4 and placed in the processing device 4.

Next, the processing apparatus 4 performs a dicing process using a laser on the processing target wafer W of the overlapped wafer T (step S2: dicing). After the completion of the dicing process, in order to allow the glass substrate S to be adsorbed when the overlapped wafer T is conveyed, the overlapped wafer T is placed inside the processing apparatus 4 so that the non-bonding surface Sn of the glass substrate S faces upward. It is inverted by an inversion device (not shown) and placed in the processing device 4.

Next, the non-bonding surface Sn of the glass substrate S of the overlapped wafer T is adsorbed and held by the transfer arm 83 of the wafer transfer device 82, and the overlapped wafer T is transferred from the processing device 4 to the transfer device 5, and the transfer is performed. The device 5 is placed on a delivery table (not shown). The superposed wafer T placed on the delivery table is sucked and held by the transfer arm 120 of the ultraviolet irradiation device 6 so that the non-bonding surface Sn of the glass substrate S faces upward. Then, the wafer is conveyed, and is placed on the wafer chuck 100 at the first processing position P1 of the ultraviolet irradiation device 6. Then, the wafer chuck 100 is moved to the second processing position P2. Then, the ultraviolet light source 111 of the ultraviolet irradiation unit 110 irradiates ultraviolet rays from the upper side of the superposed wafer T, that is, the glass substrate S side (step S3: irradiation step).

After the ultraviolet irradiation processing, the wafer chuck 100 is returned to the first processing position P1. Then, the overlapped wafer T placed on the wafer chuck 100 is transported while the glass substrate S is adsorbed and held by the transport arm 120 of the ultraviolet irradiation device 6 and placed on the delivery table of the delivery device 5.

Next, the non-bonded surface Sn of the glass substrate S is adsorbed and held by the transfer arm 83 of the wafer transfer device 82, and the superposed wafer T is transferred from the delivery device 5 to the processing device 7.

Then, the overlapped wafer T is first subjected to mount processing in the processing device 7 by the fixing unit 70, the dicing tape D is attached to the non-bonding surface Wn of the wafer W to be processed, and the dicing tape D is used to perform dicing. It is fixed to the frame F (step S4: fixing step). In addition, in order to allow the non-bonding surface Wn of the processing target wafer W to face upward during the mounting process so that the dicing tape D is attached to the non-bonding surface Wn, the superposed wafer T is processed by the processing device 7 before the mounting process. It is inverted inside by a transfer arm (not shown).

The overlapped wafer T fixed to the dicing frame F is transferred from the fixing unit 70 to the removing unit 71 by a transfer arm (not shown). Then, the glass substrate S of the superposed wafer T is removed by the removing section 71 (step S5: removing step). In addition, in order to remove the glass substrate S during the detaching process, the overlapped wafer T is inverted by a transfer arm (not shown) inside the processing apparatus 7 before the detaching process.

The overlapped wafer T from which the glass substrate S has been removed is transferred from the removing section 71 to the peeling section 72 by a transfer arm (not shown). Then, the joining tape B is peeled off by the peeling section 72 from the overlapped wafer T from which the glass substrate S has been removed (step S6: peeling step).

After that, the superposed wafer T that has undergone all the processing, that is, the processing target wafer W fixed to the dicing frame F is transferred to the cassette C of the cassette mounting table 20 of the carry-out station 3. In this way, a series of wafer processes of this embodiment is completed.
The processing target wafer W carried out from the substrate processing system 1 and held in the dicing frame F is expanded by an external device (not shown), and the dicing tape D is expanded, so that individual chips are obtained. Is divided into

According to this embodiment, the dicing tape D is attached after the ultraviolet irradiation processing, and the ultraviolet rays are not irradiated to the dicing tape D during the ultraviolet irradiation processing. Therefore, it is possible to prevent the peripheral edge portion of the processing wafer W from being damaged when the joining tape B is peeled from the processing wafer W after the dicing tape D is attached.
In addition, according to the present embodiment, since no special light shielding member or the like is required, it is possible to prevent the loss at low cost.

Further, since the fixing portion 70, the detaching portion 71, and the peeling portion 72 are integrally provided, it is possible to perform the detaching treatment of the glass substrate S between the mounting treatment and the peeling treatment as in the substrate treating method according to the present embodiment. When it is performed, it is possible to prevent an increase in the transfer time of the overlapped wafer T, and it is possible to prevent an increase in the time required for wafer processing.

Next, a modified example of the substrate processing system 1 of this embodiment will be described.

In the ultraviolet irradiation device 6 of the above example, the wafer chuck 100 is provided below, the ultraviolet irradiation unit 110/ultraviolet light source 111 that emits ultraviolet light downward is provided above, and the transfer arm 120 is a glass substrate. The non-bonding surface Sn of S was adsorbed by the holding portion 122, and the non-bonding surface Sn was held with the non-bonding surface Sn facing upward. On the other hand, in the ultraviolet irradiation device 6 of FIG. 5, the wafer chuck 100 is not provided, and the ultraviolet irradiation unit 110/ultraviolet light source 111 for irradiating ultraviolet rays upward is provided below, and the transfer arm 120 is made of glass. The side end surface of the substrate S is held by the holding portion 122, and the superposed wafer T is held with the non-bonding surface Sn of the glass substrate S facing downward. In the transfer arm 120 of this example, the holding portion 122 is supported by the arm portion 121 via the support member 124.

When the ultraviolet irradiation device 6 of the present example is used, when the superposed wafer T is carried into the ultraviolet irradiation device 6, the superposed wafer T is turned by an unillustrated reversing device so that the non-bonding surface Sn of the glass substrate S faces downward. Is reversed. Then, the overlapped wafer T is held in the holding portion 122 of the transfer arm 120, the side end surface of the glass substrate S is gripped, and transferred to a position above the ultraviolet irradiation unit 110. Next, the ultraviolet irradiation unit 110 irradiates ultraviolet rays from the lower side of the superposed wafer T, that is, the glass substrate S side. Then, after the ultraviolet treatment, the overlapped wafer T is returned to the delivery device 5 using the transfer arm 120. When returning to the delivery device 5, the superposed wafer T is inverted by a reversing device (not shown) so that the non-bonding surface Sn of the glass substrate S faces upward.

When the ultraviolet irradiation device 6 of this example is used, a glass substrate S having a diameter larger than that of the wafer W to be processed is used, and the holding portion 122 of the transfer arm 120 has the glass substrate S side of the overlapped wafer T. It is preferable that the end surface can be held by the container.

(Second embodiment)
Next, the configuration of the substrate processing system according to the second embodiment of the present invention will be described. FIG. 6 is a plan view schematically showing the outline of the configuration of the substrate processing system 1 according to the second embodiment.

As shown in FIG. 6, the substrate processing system 1 according to the present embodiment has a carry-in station 2, a carry-out station 3, a processing device 4, a delivery device 5, and an ultraviolet light as in the first embodiment. The irradiation device 6, the processing device 7, and the transfer station 8 are connected to each other. However, the processing device 7 of the present embodiment has only the fixing portion 70 and the peeling portion 72, and does not have the removing portion 71. The ultraviolet irradiation device 6 has a detaching portion 130 (see FIG. 7) having the same function as the detaching portion 71. That is, in the ultraviolet irradiation device 6 of this embodiment, the ultraviolet irradiation unit 110 and the detaching unit 130 are provided in the same device.

FIG. 7 is a side view showing the outline of the configuration of the ultraviolet irradiation device 6 of FIG.
In the upper region of the ultraviolet irradiation device 6 of FIG. 7, they are arranged side by side in this order in the X-axis direction.

The ultraviolet irradiation device 6 in FIG. 7 has the transfer arm 120 at the upper side and the ultraviolet irradiation unit 110 and the removal unit 130 at the lower side, and the ultraviolet irradiation unit 110 and the removal unit 130 are arranged in this order in the X-axis direction. It is arranged.

The transfer arm 120 is configured to be movable on a guide rail 123 extending in the X-axis direction, and is also configured to be movable in the horizontal direction, the vertical direction, and around the vertical axis. The transfer arm 120 can transfer the overlapped wafer T between the transfer device 5 and the ultraviolet irradiation device 6, and moves the overlapped wafer T to two processing positions P11 and P12 in the ultraviolet irradiation device 6. it can.
In the present embodiment, the first processing position P11 is a position above the ultraviolet irradiation unit 110, and the second processing position P12 is a position above the removal unit 130.

Further, the ultraviolet irradiation unit 110 of the present embodiment irradiates ultraviolet rays upward from the ultraviolet light source 111.

The detaching section 130 has an adsorbing section 131 that adsorbs the glass substrate S, and the adsorbing section 131 is configured to be movable up and down by a drive section 132.

Next, wafer processing performed using the substrate processing system 1 of FIG. 6 will be described. FIG. 8 is a diagram showing a state of the overlapped wafer T during the main steps of the wafer processing.

First, the cassette C containing a plurality of overlapping wafers T is placed on the cassette placing table 20 of the carry-in station 2. In order to ensure that the non-bonding surface Wn of the processing target wafer W is attracted when the stacked wafer T is transferred, the stacked wafer T is stored in the cassette C so that the non-bonding surface Wn of the processing target wafer W faces upward. ing. Next, the non-bonding surface Wn of the processing target wafer W of the overlapped wafer T in the cassette C is adsorbed and held by the transfer arm 83 of the wafer transfer device 82, and the overlapped wafer T is taken out and transferred to the processing device 4 ( Step S11: transportation process). In the processing apparatus 4, the superposed wafer T is placed and moved with the non-bonding surface Wn of the processing target wafer W facing upward.

Then, the processing device 4 performs the dicing process using the laser on the processed wafer W of the overlapped wafer T (step S12: dicing).

Next, the overlapping arm T of the overlapped wafer T is sucked and held by the transfer arm 83 of the wafer transfer unit 82, and the overlapped wafer T is transferred from the processing unit 4 to the transfer unit 5. The delivery device 5 is placed on a delivery table (not shown). Then, in the superposed wafer T placed on the delivery table, the non-bonding surface Wn of the wafer W to be processed is moved by the transfer arm 120 of the ultraviolet irradiation device 6 so that the non-bonding surface Sn of the glass substrate S faces downward. It is adsorbed and held, and is conveyed to the first processing position P11 of the ultraviolet irradiation device 6. After that, the ultraviolet light source 111 of the ultraviolet irradiation unit 110 irradiates ultraviolet rays from the lower side of the superposed wafer T, that is, the glass substrate S side (step S13: irradiation step).

After the ultraviolet irradiation processing, the overlapped wafer T is transferred to the second processing position P12 by the transfer arm 120. Then, the suction part 131 of the detaching part 130 is moved up and down, and the glass substrate S is detached from the overlapped wafer T held by the transfer arm 120 (step S14: detaching step). Thereafter, the overlapped wafer T from which the glass substrate S has been removed is transferred by the transfer arm 120 and placed on the transfer table of the transfer device 5.

Next, the superposed wafer T is transferred from the delivery device 5 to the processing device 7 with the non-bonding surface Wn of the processing target wafer W being suction-held by the transfer arm 83 of the wafer transfer device 82.

Then, the overlapped wafer T is first mounted in the processing apparatus 7 by the fixing unit 70, the dicing tape D is attached to the non-bonding surface Wn of the wafer W to be processed, and the dicing tape D is used to dice the wafer W. It is fixed to the frame F (step S15: fixing step).

The overlapped wafer T fixed to the dicing frame F is transferred from the fixing unit 70 to the peeling unit 72 by a transfer arm (not shown). Then, the joining tape B is peeled off by the peeling section 72 from the overlapped wafer T fixed to the dicing frame F (step S16: peeling step). In addition, in order to allow the bonding surface Wj of the processing target wafer W to face upward and to peel the bonding tape B from above at the time of peeling, the overlapped wafer T is not shown inside the processing apparatus 7 before the peeling process. It is reversed by the transfer arm.

After that, the superposed wafer T that has undergone all the processing, that is, the processing target wafer W fixed to the dicing frame F is transferred to the cassette C of the cassette mounting table 20 of the carry-out station 3. In this way, a series of wafer processes of this embodiment is completed.

Also in the present embodiment, since the dicing tape D is attached after the ultraviolet irradiation processing, when the joining tape B is peeled from the processing target wafer W after the dicing tape D is applied, the peripheral edge of the processing target wafer W is removed. The loss of parts can be prevented at low cost.

Further, in the present embodiment, since the non-bonding surface Wn of the wafer W to be processed of the overlapped wafer T is adsorbed and held, the number of times the overlapped wafer T is inverted can be reduced. However, in the first embodiment, since the glass substrate S is removed by the processing device 7, when the superposed wafer T processed by the ultraviolet irradiation device 6 is placed on the delivery table of the delivery device 5, the table is removed. It is possible to further reduce the possibility that the wafer W will become dirty or the wafer W to be processed will be broken during the transportation of the overlapped wafer T after removal of the glass substrate S to the processing apparatus 7.

(Third Embodiment)
Next, the wafer processing according to the third embodiment of the present invention will be described using an example using the substrate processing system 1 of FIG. FIG. 9 is a diagram showing a state of the overlapped wafer T during the main steps of the wafer processing of this embodiment.

First, the cassette C containing a plurality of overlapping wafers T is placed on the cassette placing table 20 of the carry-in station 2. In order to ensure that the non-bonding surface Wn of the processing target wafer W is attracted when the stacked wafer T is transferred, the stacked wafer T is stored in the cassette C so that the non-bonding surface Wn of the processing target wafer W faces upward. ing. Next, the transfer arm 83 of the wafer transfer device 82 sucks and holds the non-bonding surface Wn of the processing target wafer W of the overlapped wafer T in the cassette C, and the overlapped wafer T is taken out and transferred, and the transfer table of the transfer device 5 is transferred. (Step S21: carrying step).

Then, in the superposed wafer T placed on the delivery table, the non-bonding surface Wn of the wafer W to be processed is moved by the transfer arm 120 of the ultraviolet irradiation device 6 so that the non-bonding surface Sn of the glass substrate S faces downward. It is adsorbed and held, and is conveyed to the first processing position P11 of the ultraviolet irradiation device 6. Thereafter, the ultraviolet light source 111 of the ultraviolet irradiation unit 110 irradiates ultraviolet rays from the lower side of the superposed wafer T, that is, the glass substrate S side (step S22: irradiation step).

After the ultraviolet irradiation processing, the overlapped wafer T is transferred to the second processing position P12 by the transfer arm 120. Then, the suction part 131 of the removing part 130 is moved up and down, and the glass substrate S is removed from the overlapped wafer T held by the transfer arm 120 (step S23: removing step). Thereafter, the overlapped wafer T from which the glass substrate S has been removed is transferred by the transfer arm 120 and placed on the transfer table of the transfer device 5.

Next, the superposed wafer T is transferred from the delivery device 5 to the processing device 7 with the non-bonding surface Wn of the processing target wafer W being suction-held by the transfer arm 83 of the wafer transfer device 82.

Then, the overlapped wafer T is subjected to mount processing in the processing device 7 by the fixing portion 70, the dicing tape D is attached to the non-bonding surface Wn of the wafer W to be processed, and the dicing frame is provided via the dicing tape D. It is fixed to F (step S24: fixing step). In the present embodiment, a material that transmits a laser is used for the dicing tape D so that dicing using a laser in the next step can be performed.

The overlapped wafer T fixed to the dicing frame F is transferred to the transfer arm 83 of the wafer transfer device 82 via a transfer arm or the like (not shown) in the processing apparatus 7. Then, the overlapped wafer T fixed to the dicing frame F is transferred to the processing device 4 by the transfer arm 83 in a state where the surfaces of the dicing frame F and the dicing tape D opposite to the processed wafer W are suction-held. R. In the processing apparatus 4, the overlapped wafer T fixed to the dicing frame F is placed and moved with the surface of the dicing tape D opposite to the processed wafer W facing upward. .. After the transportation to the processing device 4, the processing device 4 performs a dicing process using a laser on the processed wafer W of the overlapped wafer T over the dicing tape D (step S25: dicing process).

Next, the overlapped wafer T fixed to the dicing frame F is sucked and held by the transfer arm 83 of the wafer transfer device 82 on the surface of the dicing tape D opposite to the wafer W to be processed, and the processing device 4 transfers the processed wafer T to the processing device 4. It is transported to 7.

Then, the joining tape B is peeled from the overlapped wafer T fixed to the dicing frame F by the peeling section 72 of the processing device 7 (step S26: peeling step). In addition, in order to allow the bonding surface Wj of the wafer to be processed W to face upward during peeling and the bonding tape B to be peeled from above, the overlapped wafer T is not shown inside the processing apparatus 7 before the peeling process. It is reversed by the transfer arm.

After that, the superposed wafer T that has undergone all the processing, that is, the processing target wafer W fixed to the dicing frame F is transferred to the cassette C of the cassette mounting table 20 of the carry-out station 3. In this way, a series of wafer processes of this embodiment is completed.

Also in the present embodiment, since the dicing tape D is attached after the ultraviolet irradiation processing, when the joining tape B is peeled from the processing target wafer W after the dicing tape D is applied, the peripheral edge of the processing target wafer W is removed. The loss of parts can be prevented at low cost.

(Modification of the first embodiment)
In the first embodiment, for example, the ultraviolet irradiation unit 110 may be provided above the wafer transfer area 80, and the overlapped wafer T being transferred in the wafer transfer area 80 may be irradiated with ultraviolet rays. In this case, the delivery device 5 and the ultraviolet irradiation device 6 may be omitted.

(Modifications of the first and second embodiments)
In the first and second embodiments, another dicing process such as a dicing process using a blade may be performed instead of the dicing process using a laser.

(Modifications of the second and third embodiments)
In the second and third embodiments described above, in the ultraviolet irradiation device 6, the superposed wafer T is held so that the non-bonding surface Sn of the glass substrate S faces downward, and the superposed wafer T is irradiated with ultraviolet rays from the lower side. Then, the glass substrate S was removed from the lower side. Instead, in the second and third embodiments, the superposed wafer T is placed on the same wafer chuck as that of FIG. 3 so that the non-bonding surface Sn of the glass substrate S faces upward, and the superposed wafer T The glass substrate S may be removed from the upper side by irradiating the wafer T with ultraviolet rays from the upper side.
The inversion of the overlapped wafer T required by such a configuration is performed by the transfer arm 83 of the wafer transfer device 82, the transfer arm 120 of the ultraviolet irradiation device 6, the reversing device (not shown), and the like.

(Modifications of the second and third embodiments)
In the second and third embodiments, for example, the ultraviolet irradiation unit 110 is provided below the transfer arm 83, and during transfer of the overlapped wafer T by the transfer arm 83, the overlapped wafer T is irradiated with ultraviolet rays so that the overlapped wafer T is exposed to the glass substrate. S may be removed. In this case, the ultraviolet irradiation unit 110 of the ultraviolet irradiation device 6 may be omitted, or the delivery device 5 and the ultraviolet irradiation device 6 may be omitted and the removal unit 130 may be provided at an arbitrary position.

(Modifications of the first to third embodiments)
The substrate processing system 1 used for the wafer processing of each of the above-described embodiments was provided with the processing device 4, but the processing device 4 was omitted, and in the wafer processing of each embodiment, the dicing processing was performed. The wafer T may be loaded and the dicing process may be omitted.

In each of the above embodiments, the non-bonding surface Wn of the wafer W to be processed of the overlapped wafer T is assumed to be thinned. Instead, as shown in FIG. 10, the substrate processing system 1 is provided with a thinning apparatus 10 for performing a thinning process, and a non-bonded surface Wn of a processing target wafer W is not thinned and a superposed wafer T is carried in. In the wafer processing of each embodiment, the thinning apparatus 10 may perform a thinning step of thinning the non-bonded surface Wn of the processed wafer W of the overlapped wafer T.
In the thinning apparatus 10, a grinding process for grinding the non-bonding surface Wn of the processing target wafer W and a polishing process for polishing the non-bonding surface Wn after grinding are performed. Further, in the thinning device 10, a cleaning process for cleaning the non-bonding surface Wn may be performed. However, the cleaning process may be performed by a device different from the thinning device 10.

In addition, in the above description, the reversal performed using the reversing device may be performed using the transfer arm. Similarly, in the above description, the reversal performed using the transfer arm may be performed using the reversing device.

Although the embodiment of the present invention has been described above, the present invention is not limited to this example. It is obvious to those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims, and naturally, these are also within the technical scope of the present invention. It is understood that it belongs.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 2 Carry-in station 3 Carry-out station 4 Processing device 5 Transfer device 6 Ultraviolet irradiation device 7 Processing device 8 Transfer station 9 Control unit 10 Thinning device 33 Transfer arm 70 Fixing unit 71 Removal unit 72 Stripping unit 110 Ultraviolet irradiation unit 111 Ultraviolet light source 130 Removal part B Joining member (joining tape)
D dicing tape F dicing frame S support substrate (glass substrate)
T overlap wafer W wafer (processed wafer)

Claims (10)

A substrate processing method for performing a predetermined process on a polymerized substrate in which an ultraviolet transparent supporting substrate and a substrate to be processed are bonded via a bonding member whose adhesiveness is reduced by ultraviolet irradiation,
An irradiation step of irradiating ultraviolet rays from the supporting substrate side,
A fixing step of attaching a dicing tape to the surface of the substrate to be processed which is opposite to the joining member, and fixing the dicing tape to the dicing frame;
A detaching step of detaching the supporting substrate from the superposed substrate,
A peeling step of peeling the bonding member from the superposed substrate,
The fixing step is performed after the irradiation step,
The peeling step is performed after the removing step. The substrate processing method according to claim 1,
The removing step is performed after the fixing step. The substrate processing method according to claim 1,
The fixing step is performed after the removing step. The substrate processing method according to claim 2,
Before the irradiation step, a dicing step of dicing the substrate to be processed is included. The substrate processing method according to claim 3,
After the fixing step, a dicing step of dicing the substrate to be processed is included. The substrate processing method according to claim 1,
The method includes a thinning step of thinning a surface of the substrate to be processed opposite to the bonding member. In order for the substrate processing system to execute a substrate processing method for performing a predetermined process on a polymerized substrate in which a supporting substrate and a substrate to be processed which are transparent to ultraviolet light are bonded via a bonding member whose adhesiveness is reduced by ultraviolet irradiation, A readable computer storage medium that stores a program that operates on a computer of a control unit that controls a substrate processing system,
The substrate processing method,
An irradiation step of irradiating ultraviolet rays from the supporting substrate side,
A fixing step of attaching a dicing tape to the surface of the substrate to be processed which is opposite to the joining member, and fixing the dicing tape to the dicing frame;
A detaching step of detaching the supporting substrate from the superposed substrate,
A peeling step of peeling the bonding member from the superposed substrate,
The fixing step is performed after the irradiation step,
The peeling step is performed after the removing step. A substrate processing system for performing a predetermined process on a polymerized substrate in which a supporting substrate and a substrate to be processed which are transparent to ultraviolet light are bonded via a bonding member whose adhesiveness is reduced by ultraviolet irradiation,
Before attaching the dicing tape, an irradiation unit that irradiates ultraviolet rays from the support substrate side,
A detaching portion for detaching the supporting substrate from the superposed substrate. The substrate processing system according to claim 8,
The removal unit is provided in the same device as the irradiation unit. The substrate processing system according to claim 8,
A fixing portion for fixing the dicing tape to the dicing frame by attaching the dicing tape to the surface of the substrate to be processed which is opposite to the joining member.
A peeling section for peeling the bonding member from the superposed substrate,
The removal part is
It is provided in a device separate from the irradiation unit and in the same device as the fixing unit and the peeling unit.

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