JPS6477123A - Reduction stepper and exposure process - Google Patents

Reduction stepper and exposure process

Info

Publication number
JPS6477123A
JPS6477123A JP63108989A JP10898988A JPS6477123A JP S6477123 A JPS6477123 A JP S6477123A JP 63108989 A JP63108989 A JP 63108989A JP 10898988 A JP10898988 A JP 10898988A JP S6477123 A JPS6477123 A JP S6477123A
Authority
JP
Japan
Prior art keywords
pattern
exposed
wave lengths
beam fluxes
multifocus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63108989A
Other languages
Japanese (ja)
Other versions
JP2619473B2 (en
Inventor
Hiroshi Fukuda
Norio Hasegawa
Toshihiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63108989A priority Critical patent/JP2619473B2/en
Priority to US07/307,513 priority patent/US4937619A/en
Publication of JPS6477123A publication Critical patent/JPS6477123A/en
Application granted granted Critical
Publication of JP2619473B2 publication Critical patent/JP2619473B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To increase the practical depth of focus of a fine pattern by a method wherein the pattern is projection-exposed by excimer laser beam fluxes comprising multiple different wave lengths to be multifocus-exposed on the same optical axis using the chromatic aberration of a projection lens. CONSTITUTION:The laser radiation flux from an excimer laser resonator 22 is irradiated into two optical paths by a half mirror 24 so that the band of the two beam fluxes may be narrowed centering on the mutually different wave lengths lambda1, lambda2 by two etalons 26, 27. The narrow banded two beam fluxes synthesized by the other half mirror 29 irradiate a reticle 15 through an irradiation optical system. A projection lens 16 focuses a pattern on the reticle 15 on the different positions on the same optical exist as that of the two wave lengths enabling the pattern to be multifocus-exposed.
JP63108989A 1986-08-08 1988-05-06 Reduction projection exposure method Expired - Lifetime JP2619473B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63108989A JP2619473B2 (en) 1987-06-17 1988-05-06 Reduction projection exposure method
US07/307,513 US4937619A (en) 1986-08-08 1989-02-08 Projection aligner and exposure method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-148943 1987-06-17
JP14894387 1987-06-17
JP63108989A JP2619473B2 (en) 1987-06-17 1988-05-06 Reduction projection exposure method

Publications (2)

Publication Number Publication Date
JPS6477123A true JPS6477123A (en) 1989-03-23
JP2619473B2 JP2619473B2 (en) 1997-06-11

Family

ID=26448803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63108989A Expired - Lifetime JP2619473B2 (en) 1986-08-08 1988-05-06 Reduction projection exposure method

Country Status (1)

Country Link
JP (1) JP2619473B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204894A (en) * 1998-01-13 1999-07-30 Matsushita Electron Corp Excimer laser oscillation equipment, reduction projection aligner using the same, and pattern forming method using the aligner
US6322220B1 (en) 1994-02-14 2001-11-27 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method using the same
JP2004510177A (en) * 2000-07-25 2004-04-02 クボタ　リサーチ　アソシエーツ、インク． Exposure system for recording media
JP2006114914A (en) * 2004-10-15 2006-04-27 Asml Netherlands Bv Lithography system, method for adjusting transparent characteristics of optical path in lithography system, semiconductor device, manufacturing method for reflection element used in lithography system, and reflection element manufactured by it
US7456934B2 (en) 2006-12-01 2008-11-25 Canon Kabushuki Kaisha Exposure apparatus and device manufacturing method
US7477356B2 (en) 2006-06-09 2009-01-13 Canon Kabushiki Kaisha Exposure apparatus
US7612868B2 (en) 2007-06-28 2009-11-03 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device
KR20190051041A (en) * 2016-09-20 2019-05-14 칼 짜이스 에스엠티 게엠베하 Projection exposure method and projection exposure apparatus for microlithography
US11526082B2 (en) 2017-10-19 2022-12-13 Cymer, Llc Forming multiple aerial images in a single lithography exposure pass
CN115524925A (en) * 2022-08-08 2022-12-27 中国电子科技集团公司第十一研究所 Method for improving photoetching contrast of interference exposure and detector
EP4109179A2 (en) 2021-06-23 2022-12-28 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and manufacturing method for product
WO2023135773A1 (en) * 2022-01-14 2023-07-20 ギガフォトン株式会社 Photomask creation method, data creation method, and electronic device manufacturing method
US12001144B2 (en) 2022-10-26 2024-06-04 Cymer, Llc Forming multiple aerial images in a single lithography exposure pass

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250947A (en) 2006-03-17 2007-09-27 Canon Inc Exposure apparatus and image surface detecting method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817446A (en) * 1981-07-24 1983-02-01 Hitachi Ltd Projection exposing method and its device
JPS60257519A (en) * 1984-06-04 1985-12-19 Canon Inc Printer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817446A (en) * 1981-07-24 1983-02-01 Hitachi Ltd Projection exposing method and its device
JPS60257519A (en) * 1984-06-04 1985-12-19 Canon Inc Printer

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322220B1 (en) 1994-02-14 2001-11-27 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method using the same
JPH11204894A (en) * 1998-01-13 1999-07-30 Matsushita Electron Corp Excimer laser oscillation equipment, reduction projection aligner using the same, and pattern forming method using the aligner
JP2004510177A (en) * 2000-07-25 2004-04-02 クボタ　リサーチ　アソシエーツ、インク． Exposure system for recording media
JP2006114914A (en) * 2004-10-15 2006-04-27 Asml Netherlands Bv Lithography system, method for adjusting transparent characteristics of optical path in lithography system, semiconductor device, manufacturing method for reflection element used in lithography system, and reflection element manufactured by it
US7477356B2 (en) 2006-06-09 2009-01-13 Canon Kabushiki Kaisha Exposure apparatus
US7456934B2 (en) 2006-12-01 2008-11-25 Canon Kabushuki Kaisha Exposure apparatus and device manufacturing method
US7612868B2 (en) 2007-06-28 2009-11-03 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device
KR20190051041A (en) * 2016-09-20 2019-05-14 칼 짜이스 에스엠티 게엠베하 Projection exposure method and projection exposure apparatus for microlithography
JP2019530024A (en) * 2016-09-20 2019-10-17 カール・ツァイス・エスエムティー・ゲーエムベーハー Projection exposure method and projection exposure apparatus for microlithography
US11526082B2 (en) 2017-10-19 2022-12-13 Cymer, Llc Forming multiple aerial images in a single lithography exposure pass
EP4109179A2 (en) 2021-06-23 2022-12-28 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and manufacturing method for product
US11835863B2 (en) 2021-06-23 2023-12-05 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and manufacturing method for product
WO2023135773A1 (en) * 2022-01-14 2023-07-20 ギガフォトン株式会社 Photomask creation method, data creation method, and electronic device manufacturing method
CN115524925A (en) * 2022-08-08 2022-12-27 中国电子科技集团公司第十一研究所 Method for improving photoetching contrast of interference exposure and detector
US12001144B2 (en) 2022-10-26 2024-06-04 Cymer, Llc Forming multiple aerial images in a single lithography exposure pass

Also Published As

Publication number Publication date
JP2619473B2 (en) 1997-06-11

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