JPS6475664A - Formation of x-ray transmitting film - Google Patents

Formation of x-ray transmitting film

Info

Publication number
JPS6475664A
JPS6475664A JP23405287A JP23405287A JPS6475664A JP S6475664 A JPS6475664 A JP S6475664A JP 23405287 A JP23405287 A JP 23405287A JP 23405287 A JP23405287 A JP 23405287A JP S6475664 A JPS6475664 A JP S6475664A
Authority
JP
Japan
Prior art keywords
film
sputtering
ray transmitting
gas
transmitting film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23405287A
Other languages
Japanese (ja)
Inventor
Toshihiko Kanayama
Minoru Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Hoya Corp filed Critical Agency of Industrial Science and Technology
Priority to JP23405287A priority Critical patent/JPS6475664A/en
Publication of JPS6475664A publication Critical patent/JPS6475664A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form an X-ray transmitting film having controlled internal stress when an Si3N4 film is deposited by sputtering, by using a gaseous mixture of an inert gas with N2 as a sputtering gas and varying the mixing ratio. CONSTITUTION:When an Si3N4 film is deposited on a substrate by sputtering, a gaseous mixture of an inert gas with N2 is used as a sputtering gas and the mixing ratio is varied. The pressure of the sputtering gas is preferably kept low during deposition so that a formed film takes in no impurities. Thus, the internal stress of the film is precisely controlled without changing the compsn., refractive index, density, visible light transmissivity, mechanical properties, etc.
JP23405287A 1987-09-18 1987-09-18 Formation of x-ray transmitting film Pending JPS6475664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23405287A JPS6475664A (en) 1987-09-18 1987-09-18 Formation of x-ray transmitting film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23405287A JPS6475664A (en) 1987-09-18 1987-09-18 Formation of x-ray transmitting film

Publications (1)

Publication Number Publication Date
JPS6475664A true JPS6475664A (en) 1989-03-22

Family

ID=16964819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23405287A Pending JPS6475664A (en) 1987-09-18 1987-09-18 Formation of x-ray transmitting film

Country Status (1)

Country Link
JP (1) JPS6475664A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196396B2 (en) 2002-12-26 2007-03-27 Fujitsu Limited Semiconductor device having STI without divot and its manufacture
US10954808B2 (en) 2015-06-03 2021-03-23 Mitsubishi Power, Ltd. Sealing device and rotary machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196396B2 (en) 2002-12-26 2007-03-27 Fujitsu Limited Semiconductor device having STI without divot and its manufacture
US7208812B2 (en) 2002-12-26 2007-04-24 Fujitsu Limited Semiconductor device having STI without divot and its manufacture
US7759215B2 (en) 2002-12-26 2010-07-20 Fujitsu Semiconductor Limited Semiconductor device having STI without divot and its manufacture
US10954808B2 (en) 2015-06-03 2021-03-23 Mitsubishi Power, Ltd. Sealing device and rotary machine

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