JPS642281B2 - - Google Patents
Info
- Publication number
- JPS642281B2 JPS642281B2 JP12004982A JP12004982A JPS642281B2 JP S642281 B2 JPS642281 B2 JP S642281B2 JP 12004982 A JP12004982 A JP 12004982A JP 12004982 A JP12004982 A JP 12004982A JP S642281 B2 JPS642281 B2 JP S642281B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- probe
- microstrip line
- microstrip
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000523 sample Substances 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 30
- 239000012212 insulator Substances 0.000 claims description 10
- 230000037431 insertion Effects 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 230000001902 propagating effect Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
Landscapes
- Waveguide Aerials (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、導波管―マイクロストリツプ線路変
換器に関し、特に量産時における性能均一な構造
の導波管―マイクロストリツプ線路変換器を提供
しようとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a waveguide-to-microstrip line converter, and in particular, an object of the present invention is to provide a waveguide-to-microstrip line converter having a structure with uniform performance during mass production. It is.
従来この種の導波管―マイクロストリツプ線路
変換器の構造を第1図及びその断面図を第2図に
示す。これは導波管1のH面と平行な外側壁面に
マイクロストリツプ線路を取付け、導波管1の短
絡面2より電気長がλg/4附近の位置(ここで、
λgは導波管中の伝搬波長)すなわちS=λg/4
の位置にプローブ導体棒3と誘電体材料よりなる
プローブ絶縁体を導波管1の伝搬電磁波の電界方
向に挿入し、導体接続部9―aで半田接続された
インピーダンス整合板5を介して導体接続部9―
bで、前記プローブ導体棒3とマイクロストリツ
プ導体6とが半田接続される。 The structure of a conventional waveguide-to-microstrip line converter of this type is shown in FIG. 1, and its cross-sectional view is shown in FIG. This is done by attaching a microstrip line to the outer wall surface parallel to the H-plane of the waveguide 1, and installing the microstrip line at a position where the electrical length is around λg/4 from the short-circuit surface 2 of the waveguide 1 (here,
λg is the propagation wavelength in the waveguide), that is, S = λg/4
The probe conductor rod 3 and the probe insulator made of a dielectric material are inserted in the direction of the electric field of the electromagnetic wave propagating in the waveguide 1 at the position of Connection part 9-
At step b, the probe conductor rod 3 and the microstrip conductor 6 are connected by soldering.
マイクロストリツプ線路は、マイクロストリツ
プ導体6と誘電体板7及び接地導体8より構成さ
れ、接地導体8が導波管側壁に合さつた位置にあ
る。 The microstrip line is composed of a microstrip conductor 6, a dielectric plate 7, and a ground conductor 8, and the ground conductor 8 is located at a position where it joins the side wall of the waveguide.
インピーダンス整合板5は、プローブ導体棒3
とマイクロストリツプ導体6のインピーダンス整
合をなしうる役割を持つており、その寸法a及び
bは、マイクロストリツプ線路のインピーダン
ス、プローブ導体棒3の導波管挿入長L及び短絡
面2よりの距離S、プローブ導体3の直径、プロ
ーブ絶縁体の誘電率、によつて異なり、実験的に
決められるものである。 The impedance matching plate 5 includes the probe conductor rod 3
and the microstrip conductor 6, and its dimensions a and b are based on the impedance of the microstrip line, the waveguide insertion length L of the probe conductor rod 3, and the short-circuit surface 2. It varies depending on the distance S, the diameter of the probe conductor 3, and the dielectric constant of the probe insulator, and is determined experimentally.
ところで導波管―マイクロストリツプ変換器の
電気的性能の良さは、VSWRで表わされる。す
なわちVSWRが広い周波数帯域で1に近いこと
が良い。第3図及び第4図は、12GHz帯の導波
管を使用し誘電体板がテフロン(登録商標)基板
よりなる特性インピーダンス50Ωなるマイクロス
トリツプ線路との変換特性例である。第3図は寸
法S=6mm、a=4mm、b=3mmでプローブ導体
棒3の挿入長Lをパラメータに特性例を示したも
のである。又、第4図はS=6mm、L=4mm、b
=3mmでインピーダンス整合板5の長さaをパラ
メータとしたものである。 By the way, the electrical performance of a waveguide-microstrip converter is expressed by VSWR. In other words, it is good for the VSWR to be close to 1 over a wide frequency band. FIGS. 3 and 4 are examples of conversion characteristics between a microstrip line using a 12 GHz band waveguide, a dielectric plate made of a Teflon (registered trademark) substrate, and a characteristic impedance of 50Ω. FIG. 3 shows an example of the characteristics with dimensions S=6 mm, a=4 mm, b=3 mm and the insertion length L of the probe conductor rod 3 as a parameter. Also, in Figure 4, S = 6 mm, L = 4 mm, b
= 3 mm, and the length a of the impedance matching plate 5 is used as a parameter.
前記特性例より導波管―マイクロストリツプ線
路変換器のVSWR特性は構成する部品の寸法に
大きく左右されることがわかる。11GHz〜
12GHzの帯域でVSWRが1.2以下の特性を要求さ
れる場合、少なくともプローブ導体挿入長L及び
インピーダンス整合板の長さaは1mmより十分小
さな寸法精度を必要とする。またインピーダンス
整合板5の幅b、プローブ絶縁体の寸法及び誘電
率ε等の変化も同様にVSWR特性に大きく影響
し同様の寸法精度と均一性が要求されることが前
記特性例より推定され、実際影響が大きい。 From the above characteristic examples, it can be seen that the VSWR characteristics of a waveguide-microstrip line converter are greatly influenced by the dimensions of the constituent parts. 11GHz~
If a VSWR of 1.2 or less is required in the 12 GHz band, at least the probe conductor insertion length L and the impedance matching plate length a must have dimensional accuracy sufficiently smaller than 1 mm. Furthermore, it is estimated from the above characteristic examples that changes in the width b of the impedance matching plate 5, the dimensions of the probe insulator, the dielectric constant ε, etc. similarly greatly affect the VSWR characteristics, and similar dimensional accuracy and uniformity are required. It actually has a big impact.
ところが、従来例による構造では、構成する各
部品の寸法精度が良くても、導体接続部9―aに
おいて、組み立てに分布を生ずる。すなわち、プ
ローブ挿入長Lの不均一、導体接続部9―aの半
田盛り上りにより影響、半田付け時の熱によるプ
ローブ絶縁体の熱変形のため半田付け近傍の分布
容量の変化の影響があり、インピーダンス整合板
の寸法を変化させた時と同様の効果を生じ、
VSWR特性の再現性を悪くする欠点を有してい
た。またプローブ絶縁体は加工性の良いことか
ら、ポリエチレン、ポリスチロール等の熱に弱い
性質のものを使用している。 However, in the structure according to the conventional example, even if the dimensional accuracy of each constituent part is good, unevenness occurs in the assembly in the conductor connection part 9-a. That is, there are effects due to uneven probe insertion length L, solder build-up at the conductor connection part 9-a, and changes in distributed capacitance near the soldering due to thermal deformation of the probe insulator due to heat during soldering. The same effect as when changing the dimensions of the impedance matching plate is produced,
It had the drawback of poor reproducibility of VSWR characteristics. The probe insulator is made of heat-resistant materials such as polyethylene or polystyrene because of its good workability.
本発明では、前記欠点をなくし、VSWR特性
の再現性すなわち量産性を有する構造の導波管―
マイクロストリツプ線変換器を提供しようとする
ものであり、以下本発明の実施例について説明す
る。第1〜第2図と同一物は同一番号を付して説
明を省略する。 The present invention eliminates the above-mentioned drawbacks and provides a waveguide with a structure that has reproducibility of VSWR characteristics, that is, mass production.
It is intended to provide a microstrip line transducer, and embodiments of the present invention will be described below. Components that are the same as those in FIGS. 1 and 2 are given the same numbers and their explanations will be omitted.
本発明による導波管―マイクロストリツプ変換
器は、インピーダンス整合板部とプローブ導体部
とが、一枚の板体により折曲して作成されたり、
インピーダンス整合板につば付きプローブ導体が
予め挿入され接合されたりして、予め一体化され
ているプローブ整合素子を用いることにより、半
田接続部を少なくし、組立て寸法並びに電気的再
現性を良くした構造を有するものである。 The waveguide-microstrip converter according to the present invention has an impedance matching plate portion and a probe conductor portion formed by bending a single plate, or
By using a pre-integrated probe matching element in which a probe conductor with a flange is inserted and bonded in advance to an impedance matching plate, the number of solder joints is reduced and the assembly dimensions and electrical reproducibility are improved. It has the following.
第5図は本考案の一実施例である。第1図で示
したインピーダンス整合板及びプローブ導体棒は
プローブ整合素子11に置き代えられており、中
空の誘電体よりなるプローブ絶縁体は導波管壁に
固定されている。 FIG. 5 shows an embodiment of the present invention. The impedance matching plate and probe conductor rod shown in FIG. 1 are replaced by a probe matching element 11, and a probe insulator made of a hollow dielectric is fixed to the waveguide wall.
プローブ整合素子11は第6図a,bに示す如
く、インピーダンス整合板部となる幅の広い部分
とプローブ導体棒部となる幅の狭い部分とを有す
る1枚の導体板がL字状に折曲されて作成されて
おり、打ち抜き、又はエツチング加工と簡単な折
曲げ加工により寸法精度良く作られる。プローブ
絶縁体12は、プローブ整合素子11の導波管挿
入部13を固定するもので中心部が円又は角の案
内穴を有する中空の誘電体である。 As shown in FIGS. 6a and 6b, the probe matching element 11 is constructed by folding a single conductive plate into an L-shape, which has a wide part serving as an impedance matching plate part and a narrow part serving as a probe conductor rod part. It is curved and made with good dimensional accuracy by punching or etching and simple bending. The probe insulator 12 fixes the waveguide insertion part 13 of the probe matching element 11, and is a hollow dielectric body having a circular or square guide hole in the center.
本発明の実施例の組み立て作業においては、プ
ローブ導体棒の半田接続作業を解消しているので
寸法及び電気的再現性が非常に高く量産性に向い
た構造を有している。 In the assembly work of the embodiment of the present invention, since the work of soldering the probe conductor rod is eliminated, the structure has very high dimensional and electrical reproducibility and is suitable for mass production.
第7図は同実施例による導波管ストリツプ線路
変換器のVSWR特性を示すものであり、
11.3GHz〜12.5GHzでVSWR1.25以下という良い
性能を得ている。 Figure 7 shows the VSWR characteristics of the waveguide stripline converter according to the same example.
It has good performance with VSWR of 1.25 or less at 11.3GHz to 12.5GHz.
第8図は、つば付きプローブ導体棒14をイン
ピーダンス整合板5に挿入してL字状にし、予め
接合してプローブ整合素子11にした第2の実施
例である。 FIG. 8 shows a second embodiment in which a flangeed probe conductor rod 14 is inserted into an impedance matching plate 5 to form an L-shape, and is bonded in advance to form a probe matching element 11.
プローブ絶縁体4の熱変形をさけるため、あら
かじめ、つば付きプローブ導体とインピーダンス
整合板を接続しておくことにより所期の目的を達
成できるものであるが、マイクロストリツプ線路
と逆方向にインピーダンス整合板が延長されるの
で、つば付きプローブ導体棒14は第1の実施例
より長くする必要がある。 In order to avoid thermal deformation of the probe insulator 4, the desired purpose can be achieved by connecting the flangeed probe conductor to an impedance matching plate in advance, but if the impedance is Since the matching plate is extended, the flangeed probe conductor rod 14 needs to be longer than in the first embodiment.
以上のように本発明による導波管―マイクロス
トリツプ変換器は量産による性能の劣下がなく安
価に提供することができるものである。 As described above, the waveguide-microstrip converter according to the present invention does not deteriorate in performance due to mass production and can be provided at low cost.
第1図は従来例における導波管―マイクロスト
リツプ線路変換器の斜視図、第2図はその断面
図、第3図及び第4図は同変換器の特性図、第5
図は本発明の一実施例における導波管―マイクロ
ストリツプ線路変換器の断面図、第6図は同変換
器のプローブ整合素子説明のための斜視図、第7
図は本発明による実施例の特性図、第8図は同他
の実施例のプローブ整合素子の斜視図である。
1…導波管、4…プローブ絶縁体、5…インピ
ーダンス整合板、6…マイクロストリツプ導体、
11…プローブ整合素子、13…導波管挿入部、
14…つば付きプローブ導体棒、9…導体接続
部。
Fig. 1 is a perspective view of a conventional waveguide-microstrip line converter, Fig. 2 is a sectional view thereof, Figs. 3 and 4 are characteristic diagrams of the converter, and Fig. 5
The figures are a cross-sectional view of a waveguide-microstrip line converter according to an embodiment of the present invention, FIG. 6 is a perspective view for explaining the probe matching element of the converter, and FIG.
The figure is a characteristic diagram of an embodiment according to the present invention, and FIG. 8 is a perspective view of a probe matching element of another embodiment. DESCRIPTION OF SYMBOLS 1... Waveguide, 4... Probe insulator, 5... Impedance matching plate, 6... Microstrip conductor,
11... Probe matching element, 13... Waveguide insertion part,
14...Probe conductor rod with flange, 9...Conductor connection part.
Claims (1)
面と平行な外側壁面にマイクロストリツプ線路が
設けられ、上記導波管の短絡面からλg/4(ただ
し、λgは導波管中の伝搬波長)の位置に挿入用
の孔が設けられ、プローブ導体棒部とインピーダ
ンス整合板部とが予めL字状にして一体化されて
いるプローブ整合素子が用いられ、そのプローブ
導体棒部とこれに嵌合される中空誘電体のプロー
ブ絶縁体とが上記挿入用の孔に挿入されて上記導
波管内に伝搬電磁波の電界方向に挿入され、上記
マイクロストリツプ線路上で上記インピーダンス
整合板が上記マイクロストリツプ線路のマイクロ
ストリツプ導体に接続されている導波管―マイク
ロストリツプ線路変換路。 2 プローブ整合素子は、幅の狭い部分を有する
1枚の導体板体がL字状に折曲されて構成されて
いる特許請求の範囲第1項記載の導波管―マイク
ロストリツプ線路変換器。 3 プローブ整合素子は、つば付きプローブ導体
棒がインピーダンス整合板に挿入され予め接合さ
れて一体化されているもので構成されている特許
請求の範囲第1項記載の導波管―マイクロストリ
ツプ線路変換器。[Claims] 1 H of a waveguide whose one end in the transmission direction is short-circuited
A microstrip line is provided on the outer wall surface parallel to the waveguide, and an insertion hole is provided at a position λg/4 (where λg is the propagation wavelength in the waveguide) from the short-circuit surface of the waveguide. , a probe matching element is used in which a probe conductor rod part and an impedance matching plate part are integrated in an L-shape in advance, and the probe conductor rod part and a hollow dielectric probe insulator fitted therein are used. is inserted into the insertion hole and inserted into the waveguide in the direction of the electric field of the propagating electromagnetic wave, and the impedance matching plate is connected to the microstrip conductor of the microstrip line on the microstrip line. Connected waveguide-microstrip line conversion path. 2. The waveguide-microstrip line conversion according to claim 1, wherein the probe matching element is constructed by bending a single conductor plate having a narrow portion into an L shape. vessel. 3. The waveguide-microstrip according to claim 1, wherein the probe matching element is constructed by inserting a probe conductor rod with a flange into an impedance matching plate and joining them in advance to integrate them. line converter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12004982A JPS5911002A (en) | 1982-07-09 | 1982-07-09 | Waveguide-microstrip line converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12004982A JPS5911002A (en) | 1982-07-09 | 1982-07-09 | Waveguide-microstrip line converter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5911002A JPS5911002A (en) | 1984-01-20 |
JPS642281B2 true JPS642281B2 (en) | 1989-01-17 |
Family
ID=14776622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12004982A Granted JPS5911002A (en) | 1982-07-09 | 1982-07-09 | Waveguide-microstrip line converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5911002A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11594476B2 (en) | 2020-09-15 | 2023-02-28 | Kabushiki Kaisha Toshiba | Plurality of leads between MOSFET chips |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60170301A (en) * | 1984-02-15 | 1985-09-03 | Matsushita Electric Ind Co Ltd | Waveguide-strip line converting device |
JP2771983B2 (en) * | 1988-03-16 | 1998-07-02 | 富士通株式会社 | Microwave IC circuit type frequency converter |
DE19944103A1 (en) * | 1999-09-15 | 2001-03-22 | Endress Hauser Gmbh Co | Device for determining the level of a product in a container |
JP4307399B2 (en) * | 2005-02-25 | 2009-08-05 | シャープ株式会社 | Antenna probe and low noise converter with antenna probe |
CN105680133B (en) * | 2016-01-11 | 2018-08-10 | 中国电子科技集团公司第十研究所 | Vertical interconnection circuit structure between substrate integrated ridge waveguide plate |
-
1982
- 1982-07-09 JP JP12004982A patent/JPS5911002A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11594476B2 (en) | 2020-09-15 | 2023-02-28 | Kabushiki Kaisha Toshiba | Plurality of leads between MOSFET chips |
Also Published As
Publication number | Publication date |
---|---|
JPS5911002A (en) | 1984-01-20 |
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