JPS63250888A - Wavelength-tunable semiconductor laser - Google Patents
Wavelength-tunable semiconductor laserInfo
- Publication number
- JPS63250888A JPS63250888A JP62086258A JP8625887A JPS63250888A JP S63250888 A JPS63250888 A JP S63250888A JP 62086258 A JP62086258 A JP 62086258A JP 8625887 A JP8625887 A JP 8625887A JP S63250888 A JPS63250888 A JP S63250888A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- semiconductor laser
- laser
- mirror
- cutouts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 230000005855 radiation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半う９休レーザの発振波長を変えることがで
きる波長可変半導体レーザ装置の改良に関するらのであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a wavelength tunable semiconductor laser device capable of changing the oscillation wavelength of a half-nine laser.
（従来の技術）
半導体レーザの発振波長は、第１０図に示ずようにレー
ザの利ＩＩＩ曲線１０１と共振器の間隔によって決まる
共振器モード１０２で決定される（λは波長）。利１ｑ
曲線１０１が発振閾値１０３を越えた波長領域内の共振
器モードで発擾七−ド１０４が現れる。したがって通常
の半導体レーザでは共据器間隔は固定なので、発１辰波
長も固定されている。しかし共振器間隔を変えるために
、半導体レーザの温度や注入電流を変えれば波長が変化
するので、可変波長レーリ“を構成することがぐきる。(Prior Art) As shown in FIG. 10, the oscillation wavelength of a semiconductor laser is determined by a laser gain III curve 101 and a resonator mode 102 determined by the interval between resonators (λ is wavelength). Interest 1q
An oscillation seventh node 104 appears in the resonator mode within the wavelength region where the curve 101 exceeds the oscillation threshold 103. Therefore, in a normal semiconductor laser, since the co-installation spacing is fixed, the emission wavelength is also fixed. However, in order to change the resonator spacing, the wavelength can be changed by changing the temperature and injection current of the semiconductor laser, making it possible to construct a tunable Rayleigh.
しかしながら温度や注入電流を変えると、利得曲線や共
振器上−ドが共に変化するので、波長変化の途中で第１
１図の１１１に示すようなモード小ツビングが生じる。However, if the temperature or injection current is changed, the gain curve and the top of the resonator will both change, so the first phase will change during the wavelength change.
Small mode tsubbing as shown at 111 in FIG. 1 occurs.
このような問題のない可変波長レーザ光源としては次の
ようならのがある。There are the following tunable wavelength laser light sources that do not have such problems.
イ１回折格子を回転させるもの（第１２図）光増幅部１
２１の出力光は集光レンズ１２２を介して回折格子１２
３に入射し、１次回折光１２５が光増幅部１２１に戻る
。１２４はＯ次回折光である。回折格子１２３を回転す
ると光増幅部１２１へ戻る１次回折光の波長が変化づる
ので、発振波長を制御することができる。A1 What rotates the diffraction grating (Figure 12) Optical amplification section 1
The output light of 21 is transmitted to the diffraction grating 12 via a condensing lens 122.
3, and the first-order diffracted light 125 returns to the optical amplification section 121. 124 is O-th order diffracted light. When the diffraction grating 123 is rotated, the wavelength of the first-order diffracted light that returns to the optical amplification section 121 changes, so the oscillation wavelength can be controlled.
口、音響光学素子によるものく第１３図）イのように回
折格子を回転する変りに、音響光学素子１３２で回折格
子１３３への入射角を変化させて発振波長を制御する。13) Instead of rotating the diffraction grating as shown in FIG. 13), the acousto-optic element 132 changes the angle of incidence on the diffraction grating 133 to control the oscillation wavelength.
（発明が解決しようとする問題点）
しかしながら、上記４１口のような構成の可変波長レー
ザ光源の場合、半導体レーザの外側に大きな部品を設置
する必要があり、大型化するという問題がある。(Problems to be Solved by the Invention) However, in the case of a variable wavelength laser light source having a configuration like the above-mentioned 41 ports, it is necessary to install large parts outside the semiconductor laser, resulting in a problem of increased size.
本発明はこのような問題点を解決するためになされたも
ので、小型で簡単な構造の可変波長レーザ光源を実現す
ることを目的とする。The present invention was made to solve these problems, and an object of the present invention is to realize a tunable wavelength laser light source that is small and has a simple structure.
（問題点を解決するための手段）
本発明は波長可変半導体レーザ装置に係るもので、その
特徴するところは台上に半導体レーザと、この半導体レ
ーザ゛からの出射光を反射するミラーとを切り欠き部を
介して配設し、前記切り欠き部の間隔を変えることによ
り半導体レーデの波長が変化するように構成した点にあ
る。(Means for Solving the Problems) The present invention relates to a wavelength tunable semiconductor laser device, and its characteristics include a semiconductor laser and a mirror that reflects the light emitted from the semiconductor laser on the table. The semiconductor radar is arranged through notches, and the wavelength of the semiconductor radar is changed by changing the spacing between the notches.
（実施例） 以下本発明を図面を用いて詳しく説明する。(Example) The present invention will be explained in detail below using the drawings.
第１図は本発明に係る波長可変半導体レーザ装置の一実
施例を示す構成説明図である。１は半導体レー１１１２
はこの半導体レーザ１の出射光を大剣するミラー、３は
このミラー２および半導体レーザ１をその上に設置する
台（マウントとも呼ぶ）、４はこの台３上の前記半導体
レーザ１とミラー２の間に設けられた切り欠き部、４１
はこの切り欠き部４の拡張部、５はこの切り欠き部４の
間隔を変える手段として切り欠き部の間に挿入されたＰ
ＺＴ等の圧電素子、６は前記台３と一体化した本装置を
支持するためのステム部、７は本装置のパッケージ部、
８はこのパッケージ部７の一部に設けられたレーザ出力
用のガラス窓、９は前記半導体レーザ１や圧電索子４に
接続するリード線である。FIG. 1 is a configuration explanatory diagram showing an embodiment of a wavelength tunable semiconductor laser device according to the present invention. 1 is a semiconductor relay 1112
3 is a mirror for directing the emitted light of the semiconductor laser 1; 3 is a stand (also called a mount) on which the mirror 2 and the semiconductor laser 1 are installed; 4 is the semiconductor laser 1 and the mirror 2 on the stand 3; a notch provided between 41
5 is an expanded portion of this notch 4, and 5 is a portion P inserted between the notches as a means for changing the interval between the notches 4.
A piezoelectric element such as ZT, 6 a stem portion for supporting the device integrated with the stand 3, 7 a package portion of the device,
Reference numeral 8 is a glass window for laser output provided in a part of this package portion 7, and reference numeral 9 is a lead wire connected to the semiconductor laser 1 and the piezoelectric cable 4.
第２図は第１図の要部を取出した動作説明図である。半
導体レーザ１の外側近傍にミラー２を置いて複合共振器
を構成しているので、わずかに異なる２つの共振器上−
ドができ、半導体レーザ１の共振器長をＬ＋、半導体レ
ーザ１とミラー２の間で構成する共振器長をＬ２とする
と、実効的な共振器間隔はｌＬ＋ １２１となり、モ
ード間隔が広がる。第３図および第４図はこの様子を示
したもので、３１はレーザの利得曲線、３３は発振閾値
、３２は発振モードである。第４図（ａ）のように圧電
素子５に電圧を印加して弾性変形により切り欠き部４の
間隔を変化させると、Ｌ２すなわちＩＬ＋ １２１が
変ってモードが移動するので、広い範囲に渡ってモード
ホッピング無く波長を可変にできる。また第４図（ｂ）
のようにレーザの温度や電流を変えた場合にもモードホ
ッピングしにくくなる。FIG. 2 is an explanatory diagram of the operation of the main part of FIG. 1. Since the mirror 2 is placed near the outside of the semiconductor laser 1 to form a composite resonator, two slightly different resonators are
When the resonator length of the semiconductor laser 1 is L+ and the resonator length formed between the semiconductor laser 1 and the mirror 2 is L2, the effective resonator spacing becomes lL+ 121, and the mode spacing increases. FIGS. 3 and 4 show this situation, where 31 is the gain curve of the laser, 33 is the oscillation threshold, and 32 is the oscillation mode. When a voltage is applied to the piezoelectric element 5 and the interval between the notches 4 is changed by elastic deformation as shown in FIG. 4(a), L2, that is, IL+121, changes and the mode moves, so that Wavelength can be made variable without mode hopping. Also, Figure 4(b)
Mode hopping also becomes difficult when the laser temperature and current are changed, as in the case of
このような構成の波長可変半導体レーザ装置によれば、
半導体レーザの後方にミラーを置くだけのｆ！１ｌｉｌ
ｔｔな構造で小型の可変波長レーザを実現できる。According to the wavelength tunable semiconductor laser device having such a configuration,
Just put a mirror behind the semiconductor laser f! 1 lil
A compact tunable wavelength laser can be realized with a tt structure.
第５図は本発明に係る波長可変半導体レーザ装置の第２
の実施例を示す要部構成説明図である。FIG. 5 shows the second wavelength tunable semiconductor laser device according to the present invention.
FIG. 2 is an explanatory diagram of a main part configuration showing an embodiment of the present invention.
切り欠き部４２．４３によりてこを構成し、圧電素子５
の変形により矢印方向に台３１部分を変位させ、てこを
利用して切り欠ぎ部４２部分の間隔変化を縮小し安定度
や波長可変分解能を上げている。The notches 42 and 43 constitute a lever, and the piezoelectric element 5
The platform 31 is displaced in the direction of the arrow by the deformation, and a lever is used to reduce the change in the interval of the notch 42 to improve stability and wavelength variable resolution.
第６図は本発明に係る波長可変半導体レーザ装置の第３
の実施例を示す要部構成説明図である。FIG. 6 shows the third wavelength tunable semiconductor laser device according to the present invention.
FIG. 2 is an explanatory diagram of a main part configuration showing an embodiment of the present invention.
圧電素子の代りにネジ６１．６２を用いて切り欠き部４
４の間隔を変化させるもので、半固定とすることもでき
る。Use screws 61 and 62 instead of the piezoelectric element to attach the notch 4.
The interval between the numbers 4 and 4 can be changed, and it can also be semi-fixed.
第７図゛は本発明に係る波長可変半導体レーザ装置の第
４の実施例を示す要部構成説明図である。；ミラー側の
台部を薄クシて、ミラー２側を動かして切り欠き部４５
の間−隔を変えるようにしたもので、７１はヒートシン
クどして働いている。FIG. 7 is an explanatory diagram of the main part configuration of a fourth embodiment of the wavelength tunable semiconductor laser device according to the present invention. ; Thinly comb the base on the mirror side and move the mirror 2 side to make the notch 45
The spacing between the parts is changed, and 71 functions as a heat sink.
第８図は本発明に係る波長可変半導体レーザ装置の第５
の実施例を示す要部構成説明図である。FIG. 8 shows the fifth wavelength tunable semiconductor laser device according to the present invention.
FIG. 2 is an explanatory diagram of a main part configuration showing an embodiment of the present invention.
第７図装置のミラー２の反射面が傾かないＪ：うにミラ
ー側の台部をロバ−パル構造としたしのである。Figure 7: The reflective surface of the mirror 2 of the device is not tilted J: The base on the mirror side has a donkey-pal structure.
第９図は本発明に係る波長可変半導体レーザ装置の第６
の実施例を示す要部構成説明図である。FIG. 9 shows a sixth example of the wavelength tunable semiconductor laser device according to the present invention.
FIG. 2 is an explanatory diagram of a main part configuration showing an embodiment of the present invention.
第１図装置においてミラー２をハーフミラ−として半導
体レーザ１からの光パワーをフォトダイオード９１でモ
ニタできるようにしたものである。In the apparatus shown in FIG. 1, the mirror 2 is a half mirror so that the optical power from the semiconductor laser 1 can be monitored by a photodiode 91.
（発明の効果）
以上述べたように本発明によれば、小型で簡単なＭ！１
造の可変波長レーザ光源を実現することができる。(Effects of the Invention) As described above, according to the present invention, a small and simple M! 1
It is possible to realize a custom-built tunable wavelength laser light source.
第１図は本発明に係る可変波長レーザ光源の一実施例を
示す構成説明図、第２図、第３図Ｊ５よび第４図は第１
図装置の動作を説明するための動作Ｏ１１ｖＩ図、第５
図〜第９図は本発明に係る可変波長レーザ光源の他の実
施例を示′ｒｊ要部構成説明図、第１０図〜第１３図は
可変波長レーザ光源の従来例を説明するための動作説明
図である。
１・・・半導体レーＩＪ’％２・・・ミラー、３・・・
台、４゜４３．４４．４５．４６・・・切り欠き部。
第３図
゛°゛舶冒パフ″′４ 、。
第４図
（ａ＞ （ｂ）第５
図 第６図 第７図
第８図 第９図
第１０図 第１／図FIG. 1 is a configuration explanatory diagram showing one embodiment of a tunable wavelength laser light source according to the present invention, and FIGS.
Figure 5 Operation O11vI diagram for explaining the operation of the device
9 to 9 show other embodiments of the tunable wavelength laser light source according to the present invention. FIGS. It is an explanatory diagram. 1...Semiconductor relay IJ'%2...Mirror, 3...
Base, 4°43.44.45.46...notch part. Figure 3 ゛°゛Ship Expedition Puff'''4. Figure 4 (a> (b) 5th
Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 1/Figure
Claims (3)
出射光を反射するミラーとを切り欠き部を介して配設し
、前記切り欠き部の間隔を変えることにより半導体レー
ザの波長が変化するように構成したことを特徴とする波
長可変半導体レーザ装置。(1) A semiconductor laser and a mirror that reflects the light emitted from the semiconductor laser are arranged on a table via a notch, and the wavelength of the semiconductor laser is changed by changing the interval between the notches. A wavelength tunable semiconductor laser device characterized in that it is configured as follows.
の間に圧電素子を挿入した特許請求の範囲第１項記載の
波長可変半導体レーザ装置。(2) The wavelength tunable semiconductor laser device according to claim 1, wherein a piezoelectric element is inserted between the notches as means for changing the interval between the notches.
た特許請求の範囲第１項記載の波長可変半導体レーザ装
置。(3) The wavelength tunable semiconductor laser device according to claim 1, wherein a screw is used as a means for changing the interval between the notches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62086258A JPS63250888A (en) | 1987-04-08 | 1987-04-08 | Wavelength-tunable semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62086258A JPS63250888A (en) | 1987-04-08 | 1987-04-08 | Wavelength-tunable semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63250888A true JPS63250888A (en) | 1988-10-18 |
Family
ID=13881794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62086258A Pending JPS63250888A (en) | 1987-04-08 | 1987-04-08 | Wavelength-tunable semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63250888A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629951A (en) * | 1995-10-13 | 1997-05-13 | Chang-Hasnain; Constance J. | Electrostatically-controlled cantilever apparatus for continuous tuning of the resonance wavelength of a fabry-perot cavity |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117186A (en) * | 1982-12-23 | 1984-07-06 | Nec Corp | Semiconductor laser device |
-
1987
- 1987-04-08 JP JP62086258A patent/JPS63250888A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117186A (en) * | 1982-12-23 | 1984-07-06 | Nec Corp | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629951A (en) * | 1995-10-13 | 1997-05-13 | Chang-Hasnain; Constance J. | Electrostatically-controlled cantilever apparatus for continuous tuning of the resonance wavelength of a fabry-perot cavity |
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