JPS62291001A - Thin film thermistor and manufacture of the same - Google Patents
Thin film thermistor and manufacture of the sameInfo
- Publication number
- JPS62291001A JPS62291001A JP13461886A JP13461886A JPS62291001A JP S62291001 A JPS62291001 A JP S62291001A JP 13461886 A JP13461886 A JP 13461886A JP 13461886 A JP13461886 A JP 13461886A JP S62291001 A JPS62291001 A JP S62291001A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- thin film
- comb
- shaped pattern
- pattern electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 230000008685 targeting Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000002905 metal composite material Substances 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011572 manganese Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000001520 comb Anatomy 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
３、発明の詳細な説明
（産業上の利用分野）
本発明は、例えば複写機のトナ一定着ローラやオフィス
・オートメジョン（ＯＡ）機器の感熱部等に温度検出器
として使用する薄膜サーミスタとその製造方法に係わり
、特に電気的な諸特性の改善を図った薄膜サーミスタと
その製造方法に関する。Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention provides a temperature detector for use in, for example, a toner fixing roller of a copying machine or a heat-sensitive part of office automation (OA) equipment. The present invention relates to a thin film thermistor used as a device and a method for manufacturing the same, and particularly to a thin film thermistor with improved electrical characteristics and a method for manufacturing the same.
（従来の技術）
従来、複写機のトナ一定肴ローラや前記０ＡＩＩ！器等
においては、そのｍ度を検出すべき対象物にサーミスタ
を機械的に接触させ、１００°Ｃ〜３００’ Ｃの温度
範囲で温度を検出している。(Prior Art) Conventionally, the toner constant plate roller of a copying machine and the above-mentioned 0AII! In such devices, a thermistor is mechanically brought into contact with the object whose temperature is to be detected, and the temperature is detected in the temperature range of 100°C to 300'C.
ところで、この得のサーミスタは、成分および製造方法
等から種々のものが開発されており、例えば金属複合酸
化物焼結サーミスタ、３ｉ ｃ薄膜サーミスタ、金属複
合酸化物薄膜サーミスタ、白金薄膜サーミスタ等が挙げ
られる。By the way, various types of thermistors have been developed based on their components and manufacturing methods, such as metal composite oxide sintered thermistors, 3IC thin film thermistors, metal composite oxide thin film thermistors, platinum thin film thermistors, etc. It will be done.
■、金属複合酸化物焼結サーミスタは、マンガンＭｎ、
コバルトＣｏ、ニッケルＮｉまたはＭｎ。■The metal composite oxide sintered thermistor includes manganese Mn,
Cobalt Co, nickel Ni or Mn.
Ｑｏ、Ｎ：を主成分としこれに＃Ｃｕまノζは鉄Ｆｅ等
を加えた金属複合酸化物を混合して成型するとともに、
１２００’Ｃ〜１３００’Ｃの高温で焼結して作ったも
のである。このサーミスタの中には熱応答時定数を短く
するために、表面をガラスで被覆した小形のビード型サ
ーミスタがある。Qo, N: is the main component, and #Cumanoζ is mixed with a metal composite oxide containing iron, Fe, etc., and molded.
It is made by sintering at a high temperature of 1200'C to 1300'C. Among these thermistors, there is a small bead-type thermistor whose surface is covered with glass in order to shorten the thermal response time constant.
■、５ｉｃｌ膜サーミスタは、３ｉｃ焼結体をターゲッ
トとし、アルゴンＡｒガス雰囲気中で高周波スパッタリ
ングによってくし型Ａｕ−ｐｔ（白金）厚膜電極を形成
したアルミナ基板上に、５ｉｃｉｉｌｌｌ１層を形成さ
せたものである。スパッタリング中の基板温度は６５０
°Ｃ〜７５０’ Ｃである。②The 5icl film thermistor targets a 3ic sintered body and has one layer of 5icill formed on an alumina substrate on which a comb-shaped Au-pt (platinum) thick film electrode is formed by high-frequency sputtering in an argon gas atmosphere. It is. The substrate temperature during sputtering is 650℃.
°C to 750'C.
■、金属複合酸化物簿膜サーミスタには２種類あり、そ
の１つは、Ｍｎ、Ｃｏ、Ｎ ｉの中の２〜３成分中にク
ロムＯｒまたはｌ”ｅ等を加えたサーミスタ材料を用い
て焼結ターゲットを作製する。There are two types of metal composite oxide film thermistors; one is a thermistor material in which chromium Or or l'e is added to two to three components of Mn, Co, and Ni. Create a sintered target.
さらに、これをＡｒガス雰囲気中においてスパッタリン
グによりアルミナ基板上に薄膜を形成する。Furthermore, a thin film is formed on the alumina substrate by sputtering this in an Ar gas atmosphere.
次いで、大気中で熱処理して完成する。他のもう１つは
、Ｍｎ：３．Ｃｏ：２．Ｎｉ ：１よりなる酸化物の焼
結ターゲットを使用し、△ｒに体積比で３％以上の酸素
を混合させたスパッタガス中で４００’ Ｃ〜５００’
Ｃに加熱した高融点ガラス基板上に薄膜を施したもの
である。Then, it is completed by heat treatment in the atmosphere. The other one is Mn:3. Co:2. Using a sintered target of an oxide consisting of Ni:1, 400'C to 500' was used in a sputtering gas in which Δr was mixed with 3% or more oxygen by volume.
A thin film is formed on a high melting point glass substrate heated to C.
■、白金薄膜サーミスタは、高周波スパッタ法を用いて
１０００’ ｃ近くに加熱させたサファイヤ基板上に薄
膜１１１１温体を施したものである。(2) The platinum thin film thermistor is made by applying a thin film 1111 on a sapphire substrate heated to nearly 1000'C using high frequency sputtering.
（発明が解決しようとする問題点）
しかし、以上のようなサーミスタには次に述べる様な種
々の問題点がある。(Problems to be Solved by the Invention) However, the thermistor described above has various problems as described below.
■、金属複合酸化物焼結サーミスタは、小型で熱容量の
小さいビード型サーミスタが熱応答時定数の短いことか
ら有用されているが、これは通常球形もしくは回転楕円
体に形成され、測温対象物とは点接触であるために熱伝
達が悪くなり高精度に温度を検出できない。また、支持
容器によっては、熱抵抗が更に大きくなり、あるいは熱
の拡散などにより熱応答時定数を短くするのが非常に困
難である。しかも、他の薄膜サーミスタと比較し、モの
熱容量がきわめて大きい。■Sintered metal composite oxide thermistors are small bead-type thermistors with a small heat capacity and are useful because they have a short thermal response time constant, but these are usually formed in a spherical or spheroidal shape and are used to measure the temperature of the target object. Because it is a point contact, heat transfer is poor and temperature cannot be detected with high accuracy. Furthermore, depending on the support container, the thermal resistance may become even greater, or it may be extremely difficult to shorten the thermal response time constant due to heat diffusion. Furthermore, compared to other thin film thermistors, the heat capacity of the thermometer is extremely large.
０１次に、５ｉｃｉｉｌｌｌ！サーミスタの如きは、サ
ーミスタ定数が約２０００にと小さく、温度変化による
抵抗値の変化が少ない。サーミスタ定数が温度に依存し
て変化する。この結果、広範囲にわたって温度を検出す
る場合、その直線性が劣る。01 Next, 5icill! A thermistor has a small thermistor constant of about 2000, and its resistance value changes little due to temperature changes. Thermistor constant changes depending on temperature. As a result, when temperature is detected over a wide range, linearity is poor.
また、スパッタガス中に微量の窒素が混入すると抵抗値
が大きく変化し、一定の品質のものを得るのが回能であ
る。また、くし型電極を採用しているが、素子の抵抗値
が１００°Ｃで１００にΩと大きく、検出系との整合性
が困難である。さらに、結晶性の良い安定なＳｉｃ膜を
得る場合、基板温度を高温度（例えば６５０°Ｃ〜７５
０°Ｃ）にする必要があり、このため生産性が低下する
。また、アルミナ基板の表面粗さは数μｍであり、これ
に数μｍの厚さでザーミスタ薄膜を施すと、その実効表
面積が基板の表面粗さによって大きく変化する。このた
め素子の抵抗値の変動中が大きくなる。また、このサー
ミスタは雰囲気による劣化を防ぐ観点からガラス被覆ま
たはガラス管に封入して使用されているが、これが素子
全体の熱容量を大きくし、薄膜化による熱応答性の利点
が失われてしまう。Furthermore, when a small amount of nitrogen is mixed into the sputtering gas, the resistance value changes greatly, and it is important to obtain a constant quality product. Furthermore, although comb-shaped electrodes are used, the resistance value of the element is as large as 100Ω at 100°C, making it difficult to match it with the detection system. Furthermore, when obtaining a stable SiC film with good crystallinity, the substrate temperature must be set to a high temperature (e.g. 650°C to 75°C).
0°C), which reduces productivity. Further, the surface roughness of an alumina substrate is several μm, and when a thermistor thin film is applied to this with a thickness of several μm, the effective surface area changes greatly depending on the surface roughness of the substrate. Therefore, the resistance value of the element fluctuates greatly. Further, this thermistor is used by being covered with glass or sealed in a glass tube to prevent deterioration due to the atmosphere, but this increases the heat capacity of the entire element, and the advantage of thermal responsiveness due to thinning is lost.
■、金属複合酸化物薄躾サーミスタは、結晶性の良い薄
膜サーミスタを得るために、基板温度を高温度（４００
′ｃ〜５００′ｃ）にする必要があり、Ｓｉ ｃ薄膜サ
ーミスタと同様に生産性の点で問題がある。また、比抵
抗は従来の一般的なサーミスタと同程度であり、この結
果、薄膜化すると素子の抵抗が大きくなり、検出系との
整合性が困難である。■ Metal composite oxide thin-film thermistors are manufactured by raising the substrate temperature to a high temperature (400°C) in order to obtain a thin-film thermistor with good crystallinity.
'c to 500'c), and there is a problem in terms of productivity as with SiC thin film thermistors. Further, the specific resistance is comparable to that of a conventional general thermistor, and as a result, when the film is made thinner, the resistance of the element increases, making it difficult to match it with a detection system.
■、白金薄膜サーミスタは、金属測温体であるので、比
抵抗が極めて小さい。従って、温度変化に対する抵抗値
の変化も極めて小さく、温度変化を高精度に検出できな
い。(2) Since platinum thin film thermistors are metal temperature sensors, their specific resistance is extremely low. Therefore, the change in resistance value with respect to temperature change is also extremely small, making it impossible to detect temperature change with high accuracy.
本発明は上記実情に鑑みてなされたもので、サーミスタ
定数が大きく熱安定性に優れ、かつ、熱応答時定数が極
めて短く、適切な抵抗値を持った６一
ＲＨササ−スタを提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a 6-RH susceptor having a large thermistor constant and excellent thermal stability, an extremely short thermal response time constant, and an appropriate resistance value. With the goal.
また、他のもう１つの発明においては、生産性および量
産性に優れ、かつ、小型に実現し得る薄膜サーミスタの
製造方法を提供することを目的とする。Another object of the present invention is to provide a method for manufacturing a thin film thermistor that is excellent in productivity and mass production, and can be realized in a small size.
（問題点を解決するための手段）
本発明による薄膜サーミスタは、絶縁性基板上に該基板
との密着性に優れたＣｒ、Ｔｉ、Ｍｏ。(Means for Solving the Problems) The thin film thermistor according to the present invention is made of Cr, Ti, or Mo, which has excellent adhesion to the insulating substrate, on an insulating substrate.
Ｗの何れかの金属を下層とし、かつ、Ｐｔを上層とする
二層構造により形成されたくし型パターン電極と、前記
絶縁性基板の上側または前記くし型パターン電極を覆う
ように形成された複合酸化物のサーミスタ薄膜とで構成
したものである。A comb-shaped pattern electrode formed of a two-layer structure having a lower layer made of one of W metals and a Pt upper layer, and a composite oxide formed to cover the upper side of the insulating substrate or the comb-shaped pattern electrode. It consists of a thermistor thin film.
また、もう１つの発明である薄膜サーミスタの製造方法
は、絶縁性基板上にフォトリソグラフィーによりくし型
パターン電極を形成するとともに、そのくし型パターン
電極上に同じくフォトリソグラフィーまたは機械的な金
属マスクを用いてＭｎ。Another invention, a method for manufacturing a thin film thermistor, involves forming comb-shaped patterned electrodes on an insulating substrate by photolithography, and also using photolithography or a mechanical metal mask on the comb-shaped patterned electrodes. TeMn.
Ｃｏ、Ｎｉの複合酸化物またはこれらの成分の中の２〜
３成分にＡＩ、Ｃｒ、Ｃｕ、Ｆｅの中の１成分以上を加
えた複合酸化物焼結体をターゲットとし、高周波スパッ
タリング法によってサーミスタ薄膜を施し、かつ、この
サーミスタ薄膜上に酸化シリコンまたは窒化シリコンの
保護膜を形成したものである。Co, Ni composite oxide or two or more of these components
Targeting a composite oxide sintered body containing three components plus one or more of AI, Cr, Cu, and Fe, a thermistor thin film is applied by high-frequency sputtering, and silicon oxide or silicon nitride is applied on the thermistor thin film. A protective film is formed.
（作用）
従って、以上のような手段による薄膜サーミスタによれ
ば、絶縁性基板上にくし型パターン電極を形成してその
くし数の選択により素子抵抗を小さくすることにより検
出系との整合性を容易にし、かつ、金属複合酸化物によ
るサーミスタ薄膜が施されているので、熱応答時定数が
短く、サーミスタ定数を大きくすることができる。(Function) Therefore, according to the thin film thermistor using the above means, comb pattern electrodes are formed on an insulating substrate and the element resistance is reduced by selecting the number of combs, thereby improving consistency with the detection system. In addition, since the thermistor thin film made of metal composite oxide is applied, the thermal response time constant is short and the thermistor constant can be increased.
また、薄膜サーミスタの製造方法によれば、フォトリソ
グラフィーを用いてくし型パターン電極を形成し、一定
の品質のものを小型、がっ、量産性に適するように製造
することが可能である。Further, according to the method for manufacturing a thin film thermistor, a comb-shaped pattern electrode is formed using photolithography, and it is possible to manufacture a thin film thermistor of a certain quality in a manner suitable for small size and mass production.
（実施例）
以下、本発明の実施例について第１図および第２図を参
照して説明する。第１図は薄膜サーミスタの上面図、第
２図は薄膜サーミスタの断面図である。これらの図にお
いて１は絶縁性基板であって、これは平滑な面部に形成
された単結晶シリコン基板上に、熱酸化、ＣＶＯ法また
はスパッタ法を用いて酸化シリコン、窒化シリコンアル
ミナ等の絶縁層が施されたものである。シリコン基板の
表面を平滑としたのは後述するサーミスタ薄膜の実効面
積を均一にするためである。基板として例えば表面を研
磨したアルミナまたはガラス等を使用することができる
。(Example) Hereinafter, an example of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a top view of the thin film thermistor, and FIG. 2 is a sectional view of the thin film thermistor. In these figures, reference numeral 1 denotes an insulating substrate, which is a monocrystalline silicon substrate formed with a smooth surface, on which an insulating layer of silicon oxide, silicon nitride alumina, etc. is formed using thermal oxidation, CVO method, or sputtering method. has been applied. The reason why the surface of the silicon substrate is made smooth is to make the effective area of the thermistor thin film, which will be described later, uniform. For example, alumina or glass with a polished surface can be used as the substrate.
そして、前記絶縁性基板１の上側にフォトリソグラフィ
ーを用いてくし型パターン電極２または金属複合酸化物
のサーミスタ１１ｙ！３が形成される。Then, a comb-shaped pattern electrode 2 or a thermistor 11y of metal composite oxide is formed on the upper side of the insulating substrate 1 using photolithography! 3 is formed.
フォトリソグラフィーを用いてくし型パターン電極２を
形成する理由は次の通りである。つまり、サーミスタの
比抵抗は１００’ｃで数１００Ω・ａｍ程度である。従
って、そのまま薄膜化すると素子抵抗が大きくなって検
出系との整合性が問題となる。そこで、適切な素子抵抗
値を得るために電極パターンをくし型形状としたもので
ある。一方、熱応答時定数を短くするためには、全体を
小型にし、かつ、素子の熱容量を小さくする必要がある
。The reason why the comb-shaped pattern electrode 2 is formed using photolithography is as follows. In other words, the specific resistance of the thermistor is 100'c, which is about several hundred Ω·am. Therefore, if the film is made thin as it is, the element resistance will increase and compatibility with the detection system will become a problem. Therefore, in order to obtain an appropriate element resistance value, the electrode pattern is formed into a comb shape. On the other hand, in order to shorten the thermal response time constant, it is necessary to reduce the overall size and the heat capacity of the element.
一度に多数の素子を生産する観点がらも小型化にするこ
とが必要である。このように小型で充分に小さい抵抗値
のサーミスタを得るためには、前記くし型パターン電極
２のくし数を増加させることが不可決となるが、かかる
微細な加工を行うためにはフォトリソグラフィーを用い
ることが有効である。このフォトリソグラフィーによる
くし型パターン電極２の形成手段はエツチング法とリフ
トオフ法とがあり、これら何れの方法でも所望とするく
し型パターン電極２を形成することが可能である。Miniaturization is also necessary from the viewpoint of producing a large number of devices at once. In order to obtain such a compact thermistor with a sufficiently low resistance value, it is necessary to increase the number of combs in the comb-shaped pattern electrode 2, but photolithography is required to perform such fine processing. It is effective to use Methods for forming the comb-shaped pattern electrode 2 by photolithography include an etching method and a lift-off method, and it is possible to form the desired comb-shaped pattern electrode 2 using either of these methods.
このくし型パターン電極２は、前記サーミスタ薄膜３の
上側または下側の何れに配置しても所望とする特性を得
ることができる。しかし、サー′ミスタ［１３を形成す
るためＭｎ、Ｃｏ、Ｎｉ等の酸化物は前記くし型パター
ン電極２を形成するために使用するエツチング液やリフ
トオフ用のレジスト剥離液に侵食される危険性がある。This comb-shaped pattern electrode 2 can obtain desired characteristics whether it is placed above or below the thermistor thin film 3. However, there is a risk that the oxides such as Mn, Co, and Ni used to form the thermistor [13] will be eroded by the etching solution used to form the comb-shaped pattern electrode 2 and the resist stripping solution for lift-off. be.
従って、サーミスタ薄膜３を形成後にくし型パターン電
極２をフォトリソグラフィーで形成することには問題が
ある。よって、絶縁性基板１の上にくし型パターン電極
２を形成し、その後、金属酸化物からなるサーミスタＩ
Ｉ！３を形成するのがよい。但し、エツチングやレジス
ト剥離にドライエツチングやドライアッシングを用いる
ときはこの限りでない。Therefore, there is a problem in forming the comb-shaped pattern electrode 2 by photolithography after forming the thermistor thin film 3. Therefore, a comb-shaped pattern electrode 2 is formed on an insulating substrate 1, and then a thermistor I made of metal oxide is formed.
I! It is better to form 3. However, this does not apply when dry etching or dry ashing is used for etching or resist stripping.
なお、くし型パターン電極２の電極材料は、薄膜サーミ
スタの使用湿度、サーミスタ薄膜３形成後の熱処理等に
対し熱的に充分に安定であるとともに、基板１とサーミ
スタｌ膜３との密着性に優れ、かつ、両者にほぼ近い熱
膨張率のものであることが必要である。そこで、本発明
における薄膜サーミスタのくし型パターン電極２として
はＯｒとｐｔの二層構造とすることにある。すなわち、
基板１との密着性に優れたＯｒを下側層として用い、か
つ、サーミスタ薄膜３とほぼ同じ熱膨張率を有し、密着
性にも優れたＰｔを上側層に配置してなる＃４造とする
。Ｃｒの代わりに同様に密着性を示すＴｉ、Ｍｏ、Ｗ等
を使用してもよい。また、白金用エツチング液に対する
レジスト膜の耐久性等から考えると、前記エツチング法
よりもリフトオフ法を用いてくし型パターン電極２を形
成することが望ましい。The electrode material of the comb-shaped pattern electrode 2 is sufficiently thermally stable against the humidity at which the thin film thermistor is used, the heat treatment after forming the thermistor thin film 3, etc., and also has good adhesion between the substrate 1 and the thermistor film 3. It is necessary that the coefficient of thermal expansion is excellent and that it is almost close to both. Therefore, the comb pattern electrode 2 of the thin film thermistor according to the present invention has a two-layer structure of Or and PT. That is,
#4 structure is made by using Or as the lower layer which has excellent adhesion to the substrate 1, and arranging Pt which has almost the same coefficient of thermal expansion as the thermistor thin film 3 and has excellent adhesion as the upper layer. shall be. Instead of Cr, Ti, Mo, W, etc., which also exhibit adhesive properties, may be used. Furthermore, in view of the durability of the resist film against etching liquid for platinum, it is preferable to form the comb-shaped pattern electrode 2 using a lift-off method rather than the etching method.
しかして、以上のように基板１上にくし型パターン電極
２を形成したならば、そのパターン電極２上に前記金属
酸化物によるサーミスタ薄１１１３が形成される。この
サーミスタｌ膜３は、Ａｒガス雰囲気中で高周波スパッ
タリング法により形成し、その上に保Ｗ！膜４が形成さ
れる。この形成方法は、サーミスタ薄膜３を形成する部
分を除き、金属マスクで遮蔽するか、もしくはエツチン
グあるいはリフトオフによるフォトリソグラフィーを繰
返してもよい。このサーミスタ薄膜形成のためのスパッ
タ用ターゲットとしてはＭｎ、Ｇｏ、Ｎ ｉの複合酸化
物またはＭｎ、Ｇｏ、Ｎ ｌの中の２〜３成分にＡＩ、
Ｃｒ、Ｆｅ、Ｃｕ等の一種を加えた３〜４成分の複合酸
化物を通常の焼結サーミスタの製造方法により製造した
ものを用意する。但し、ターゲットは所定の成分の焼結
体であればよく、必ずしも同一の製造方法による必要は
ない。Thus, once the comb-shaped pattern electrode 2 is formed on the substrate 1 as described above, the thermistor thin film 1113 made of the metal oxide is formed on the pattern electrode 2. This thermistor l film 3 is formed by high frequency sputtering method in an Ar gas atmosphere, and is coated with W! A membrane 4 is formed. This formation method may include shielding with a metal mask, or repeating photolithography using etching or lift-off, except for the portion where the thermistor thin film 3 is to be formed. The sputtering target for forming this thermistor thin film is a composite oxide of Mn, Go, and Ni, or two to three components of Mn, Go, and Nl plus AI,
A composite oxide containing three to four components including one of Cr, Fe, Cu, etc. is prepared by a normal method for manufacturing a sintered thermistor. However, the target only needs to be a sintered body of predetermined components, and does not necessarily need to be produced by the same manufacturing method.
このスパッタリング中の基板１の温度として２００’
Ｃ〜５００’ ｃに加熱すると、サーミスタＳ＊形成後
大気中で行う熱処理を省略もしくは短時間とすることが
できる。この熱処理は薄膜サーミスタを熱的に安定化さ
せるためのもので、使用温度よりやや高い温度を用いる
。例えば３５０°Ｃで２４〜４８時間処理しておけば経
時変化のない安定した薄膜サーミスタを得ることができ
る。The temperature of the substrate 1 during this sputtering is 200'
C to 500' C, the heat treatment performed in the atmosphere after the thermistor S* is formed can be omitted or shortened. This heat treatment is for thermally stabilizing the thin film thermistor, and uses a temperature slightly higher than the operating temperature. For example, by processing at 350°C for 24 to 48 hours, a stable thin film thermistor that does not change over time can be obtained.
あるいは基板１を加熱することなくサーミスタ薄膜３を
形成しても、熱処理時間を充分長くとることにより、安
定な［＋！ササ−スタを得ることができる。図中５は電
極リード線引出し用パッドである。Alternatively, even if the thermistor thin film 3 is formed without heating the substrate 1, the stable [+! You can get a support star. In the figure, 5 is a pad for drawing out electrode lead wires.
次に、本発明の薄膜サーミスタの具体的な製造実施例を
２つ説明する。その１つは、酸化シリコンの絶縁層を施
したシリコン単結晶基板１上に、フォトリソグラフィー
技術を用いてリフトオフ用くし型電極のパターンを形成
した。このパターンに際しては直流スパッタ法によりＣ
ｒ次いで白金のＷＩ膜を連続して形成した。そして、レ
ジストを剥離し所定のくし型パターン電極２を形成した
。Next, two specific manufacturing examples of the thin film thermistor of the present invention will be described. In one method, a pattern of interdigitated electrodes for lift-off was formed on a silicon single crystal substrate 1 coated with an insulating layer of silicon oxide using photolithography. For this pattern, C
Then, a platinum WI film was successively formed. Then, the resist was peeled off to form a predetermined comb-shaped pattern electrode 2.
このくし型パターン電ｔｔｉ２の上に金属マスクを使用
してサーミスタ１１！３を形成し、さらにその上側に保
護膜４を形成した。サーミスタ薄膜３は、Ｍｎ−１５Ｃ
ｏ−Ｎ ｉ ５ （ｗｔ％）の複合酸化物焼結ターゲッ
トを用いて圧力１ ｍＴｏ ｒ ｒのＡｒガス雰囲気中
でへ周波電力２００Ｗ、成膜速度１μｍ／時で高周波ス
パッタ法により形成した。スパッタ中の基板温度は２０
０’ ｃである。保護膜４としてスパッタ法による酸化
シリコン膜を用いた。そして、この薄膜サーミスタを大
気中で３５０’ ｃ、４８時間の間熱処理を行った。こ
の結束、サーミスタ定数が４５００に、比抵抗が１５Ω
−ｃｉ（２００’ ｃ）、素子抵抗値が５００Ωのｉｌ
ｌ！サーミスタが得られた。この薄膜サーミスタは１０
０°Ｃ〜３００″Ｃの温度範囲で使用中、経時変化が認
められなかった。A thermistor 11!3 was formed on this comb-shaped pattern electrode tti2 using a metal mask, and a protective film 4 was further formed on the upper side thereof. Thermistor thin film 3 is Mn-15C
The film was formed by high frequency sputtering using an o-N i 5 (wt%) composite oxide sintering target in an Ar gas atmosphere at a pressure of 1 mTorr at a frequency power of 200 W and a film formation rate of 1 μm/hour. The substrate temperature during sputtering is 20
0'c. As the protective film 4, a silicon oxide film formed by sputtering was used. This thin film thermistor was then heat treated in the atmosphere at 350'C for 48 hours. This bundle has a thermistor constant of 4500 and a specific resistance of 15Ω.
-ci (200'c), il with element resistance value of 500Ω
l! A thermistor was obtained. This thin film thermistor is 10
No change over time was observed during use in the temperature range of 0°C to 300″C.
他のもう１つ例は、ターゲットとしてＭｎ−３７Ｎ １
−４Ａ Ｉ （ｗｔ％）の複合酸化物の焼結体を用い、
かつ、圧力１ｍＴＯｒｒのＡｒガス雰囲気中で高周波電
力２００Ｗ、成膜速度０．８μｍ／時で高周波スパッタ
法によりザーミスタ薄１０３を形成した。その他は上記
の製造実施例と同じである。その結果、サーミスタ定数
が５０００に、比抵抗が１５０Ω・Ｃｍ（２００’ ｃ
）、素子抵抗値が５にΩの薄膜サーミスタが得られた。Another example is Mn-37N 1 as a target.
-4A I (wt%) using a sintered composite oxide,
Further, the thermistor thin film 103 was formed by high-frequency sputtering at a high-frequency power of 200 W and a film-forming rate of 0.8 μm/hour in an Ar gas atmosphere at a pressure of 1 mTOrr. The rest is the same as the manufacturing example described above. As a result, the thermistor constant was 5000, and the specific resistance was 150Ω・Cm (200'c
), a thin film thermistor with an element resistance value of 5Ω was obtained.
（発明の効果）
以上詳記したように本発明によれば、例えば上記製造実
施例１で製造したものをシリコン樹脂に埋め込みポリイ
ミドフィルムで覆ったものを２００°ｃのホットプレー
トに押し付けて熱応答時定数を測定したところ第３図の
曲線（イ）に示すように１秒以下であった。これに対し
、市販のビード型サーミスタを用いて同様の方法により
測定したところ曲線（ロ）に示すように６．１秒であっ
た。このように本発明のＳ膜す−ミスタは熱応答時定数
が非常に小さい。また、くし型パターン電極を用いてい
るので、素子抵抗が数にΩ以下と小さく、検出系との整
合が容易である。また、熱応答時定数が極めて短く、か
つ、金属複合酸化物のサーミスタ薄膜を用いたために、
サーミスタ定数が４０００に〜５０００にと大きい。し
かも、熱安定性に優れている。(Effects of the Invention) As described in detail above, according to the present invention, for example, the product manufactured in Production Example 1 above is embedded in silicone resin and covered with a polyimide film, and then pressed against a hot plate at 200°C to respond to heat. When the time constant was measured, it was less than 1 second, as shown in curve (a) in FIG. On the other hand, when a commercially available bead-type thermistor was used to measure the time in a similar manner, the time was 6.1 seconds as shown in the curve (b). As described above, the S-film mister of the present invention has a very small thermal response time constant. Furthermore, since the comb-shaped pattern electrodes are used, the element resistance is as small as several Ω or less, and matching with the detection system is easy. In addition, because the thermal response time constant is extremely short and the thermistor thin film of metal composite oxide is used,
The thermistor constant is as large as 4000 to 5000. Moreover, it has excellent thermal stability.
また、薄膜サーミスタの製造方法としてはフォトリソグ
ラフィーを用いてくし型パターン電極等を形成したので
、生産性および量産性に優れ、かつ、小型のものを作製
できる。In addition, as a manufacturing method for the thin film thermistor, photolithography is used to form the comb-shaped pattern electrodes, so that productivity and mass production are excellent, and small-sized products can be manufactured.
従って、以上のような薄膜サーミスタであれば、熱応答
時定数が極めて短いために、温度を検出すべき対象物の
ごく近傍にて非接触型薄膜サーミスタとして利用でき、
またくし型パターン電極を２組容易し、一方のパターン
電極を遮蔽して適当なブリッジ回路を構成することによ
り、赤外線検知非接触薄膜サーミスタとして利用できる
。Therefore, since the above-mentioned thin film thermistor has an extremely short thermal response time constant, it can be used as a non-contact thin film thermistor in close proximity to the object whose temperature is to be detected.
Furthermore, by preparing two sets of comb-shaped pattern electrodes and constructing a suitable bridge circuit by shielding one pattern electrode, it can be used as an infrared sensing non-contact thin film thermistor.
第１図ないし第３図は本発明の詳細な説明するために示
したもので、第１図は薄膜サーミスタの上面図、第２図
は薄膜サーミスタの断面図、第３図は従来市販のサーミ
スタと本発明に係わる薄膜サーミスタとの熱応答時定数
の比較特性図である。
１・・・絶縁性基板、２・・・くし型パターン電極、３
・・・サーミスタ薄膜、４・・・保護膜。
出願人代理人 弁理士 鈴 江 武 彦第１図Figures 1 to 3 are shown to explain the present invention in detail, and Figure 1 is a top view of a thin film thermistor, Figure 2 is a sectional view of the thin film thermistor, and Figure 3 is a conventional commercially available thermistor. FIG. 4 is a characteristic diagram comparing the thermal response time constants of the thin film thermistor and the thin film thermistor according to the present invention. 1... Insulating substrate, 2... Comb-shaped pattern electrode, 3
...Thermistor thin film, 4...Protective film. Applicant's agent Patent attorney Takehiko Suzue Figure 1
Claims (2)
Ｔｉ、Ｍｏ、Ｗの何れかの金属を下層とし、かつ、Ｐｔ
を上層とした二層構造で形成されたくし型パターン電極
と、前記絶縁性基板の上側または前記くし型パターン電
極を覆うように形成された複合酸化物のサーミスタ薄膜
とで構成されたことを特徴とする薄膜サーミスタ。(1) Cr with excellent adhesion to the insulating substrate,
A metal of Ti, Mo, or W is used as the lower layer, and Pt
The present invention is characterized by comprising: a comb-shaped pattern electrode formed in a two-layer structure with an upper layer; and a composite oxide thermistor thin film formed on the upper side of the insulating substrate or covering the comb-shaped pattern electrode. thin film thermistor.
型パターン電極を形成するとともに、そのくし型パター
ン電極上に同じくフォトリソグラフィーまたは機械的な
金属マスクを用いてＭｎ、Ｃｏ、Ｎｉの複合酸化物また
はこれらの成分の中の２〜３成分にＡｌ、Ｃｒ、Ｃｕ、
Ｆｅの中の１成分以上を加えた複合酸化物焼結体をター
ゲットとし、高周波スパッタリング法によつてサーミス
タ薄膜を施し、かつ、このサーミスタ薄膜上に酸化シリ
コンまたは窒化シリコンの保護膜を形成したことを特徴
とする薄膜サーミスタの製造方法。(2) A comb-shaped pattern electrode is formed on an insulating substrate by photolithography, and composite oxides of Mn, Co, and Ni or composite oxides thereof are formed on the comb-shaped pattern electrode using photolithography or a mechanical metal mask. 2 to 3 of the components include Al, Cr, Cu,
Targeting a composite oxide sintered body containing one or more components of Fe, a thermistor thin film was applied using a high-frequency sputtering method, and a silicon oxide or silicon nitride protective film was formed on the thermistor thin film. A method for manufacturing a thin film thermistor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13461886A JPS62291001A (en) | 1986-06-10 | 1986-06-10 | Thin film thermistor and manufacture of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13461886A JPS62291001A (en) | 1986-06-10 | 1986-06-10 | Thin film thermistor and manufacture of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62291001A true JPS62291001A (en) | 1987-12-17 |
| JPH0354841B2 JPH0354841B2 (en) | 1991-08-21 |
Family
ID=15132598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13461886A Granted JPS62291001A (en) | 1986-06-10 | 1986-06-10 | Thin film thermistor and manufacture of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291001A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08114474A (en) * | 1994-10-17 | 1996-05-07 | Kanagawa Pref Gov | Flowmeter sensor |
| JP2008244344A (en) * | 2007-03-28 | 2008-10-09 | Mitsubishi Materials Corp | Thin film thermistor element and manufacturing method of thin film thermistor element |
| JP2008258386A (en) * | 2007-04-04 | 2008-10-23 | Mitsubishi Materials Corp | Thin-film thermistor and manufacturing method thereof |
| JP2008270447A (en) * | 2007-04-19 | 2008-11-06 | Mitsubishi Materials Corp | Thin composite element and method of manufacturing the same |
| US8373535B2 (en) | 2001-01-26 | 2013-02-12 | Quality Thermistor, Inc. | Thermistor and method of manufacture |
| JP2013211436A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Battery with temperature adjustment function |
| JP2013211434A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Metal nitride film for thermistor and method of manufacturing the same, and film type thermistor sensor |
| JP2013211433A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Film type thermistor sensor |
| US10481006B1 (en) | 2019-01-30 | 2019-11-19 | King Saud University | Thermal sensing layer for microbolometer and method of making the same |
| US10488272B2 (en) | 2016-01-29 | 2019-11-26 | Mitsubishi Materials Corporation | Temperature sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5241911B2 (en) | 2009-03-13 | 2013-07-17 | サンノーバ株式会社 | Card type package |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798827A (en) * | 1980-12-12 | 1982-06-19 | Matsushita Electric Ind Co Ltd | Thin film thermistor |
| JPS61116631A (en) * | 1984-11-12 | 1986-06-04 | Nok Corp | Thin film thermistor and manufacture thereof |
-
1986
- 1986-06-10 JP JP13461886A patent/JPS62291001A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798827A (en) * | 1980-12-12 | 1982-06-19 | Matsushita Electric Ind Co Ltd | Thin film thermistor |
| JPS61116631A (en) * | 1984-11-12 | 1986-06-04 | Nok Corp | Thin film thermistor and manufacture thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08114474A (en) * | 1994-10-17 | 1996-05-07 | Kanagawa Pref Gov | Flowmeter sensor |
| US8373535B2 (en) | 2001-01-26 | 2013-02-12 | Quality Thermistor, Inc. | Thermistor and method of manufacture |
| JP2008244344A (en) * | 2007-03-28 | 2008-10-09 | Mitsubishi Materials Corp | Thin film thermistor element and manufacturing method of thin film thermistor element |
| JP2008258386A (en) * | 2007-04-04 | 2008-10-23 | Mitsubishi Materials Corp | Thin-film thermistor and manufacturing method thereof |
| JP2008270447A (en) * | 2007-04-19 | 2008-11-06 | Mitsubishi Materials Corp | Thin composite element and method of manufacturing the same |
| JP2013211436A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Battery with temperature adjustment function |
| JP2013211434A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Metal nitride film for thermistor and method of manufacturing the same, and film type thermistor sensor |
| JP2013211433A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Film type thermistor sensor |
| US10488272B2 (en) | 2016-01-29 | 2019-11-26 | Mitsubishi Materials Corporation | Temperature sensor |
| US10481006B1 (en) | 2019-01-30 | 2019-11-19 | King Saud University | Thermal sensing layer for microbolometer and method of making the same |
| US10648865B1 (en) | 2019-01-30 | 2020-05-12 | King Saud University | Thermal sensing layer for microbolometer and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354841B2 (en) | 1991-08-21 |
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