JPS62156828A - Wire bonding device - Google Patents

Wire bonding device

Info

Publication number
JPS62156828A
JPS62156828A JP29756185A JP29756185A JPS62156828A JP S62156828 A JPS62156828 A JP S62156828A JP 29756185 A JP29756185 A JP 29756185A JP 29756185 A JP29756185 A JP 29756185A JP S62156828 A JPS62156828 A JP S62156828A
Authority
JP
Japan
Prior art keywords
bonding
wire
ultrasonic
lead frame
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29756185A
Other languages
Japanese (ja)
Inventor
Akira Kuromaru
黒丸　明
Satoshi Oda
聡 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP29756185A priority Critical patent/JPS62156828A/en
Publication of JPS62156828A publication Critical patent/JPS62156828A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To assure of accurate wire bonding process with junction force under no influence of leading direction of a bonding wire by a method wherein multiple bonding heads in the direction of ultrasonic vibration are provided nearby in the leading out direction of a bonding wire. CONSTITUTION:When the leading semiconductor chip 10 in a leadframe 4 reaches the position equivalent to that of a capillary 23 of the first ultrasonic bonding head 20, a bonding wire is hung over between an electrode of the leading semiconductor chip 10 and an inner lead of the leadframe simultaneously ultrasonic is led to the abutting end of bonding wire to be connected thereto. Next, when the leadframe 4 is shifted on a feeder 2 to wire-bond the second semiconductor chip on the inner lead while the leading semiconductor chip reaches the second ultrasonic bonding head 30, ultrasonic vibration is transferred from the other capillary 33 to remaining wire bonding part for wire bonding process. Resultantly, even ball parts subject to no directional difference can be formed assuring of accurate connection.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体装置の製造工程において、半導体チップ
の電極とリードフレームのインナリードとをボンディン
グワイヤで接続するのに使用されるワイヤボンディング
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding device used to connect electrodes of a semiconductor chip and inner leads of a lead frame with bonding wires in a manufacturing process of a semiconductor device.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

半導体装置の１ｉｊ造においては、第５図、に示すよう
にリードフレームのベッド部７上にマウントされた半導
体チップ１０の電極と、外部電極となるアウタリードに
連設されたインナリード８とをボンディングワイヤ１１
により電気的に接続するためワイヤボンディング装置が
使用される。このワイヤボンディング装置は半導体チッ
プの電極とリードフレームのインナリードとに両端部が
当接するように掛け渡されたボンディング装置Ａ７の当
接端に超音波ホーンによって発生した超音波撮動をこの
ホーンに連設されたヘッド部のキレピラリあるいはウェ
ッジを介して導き、超音波振動エネルギーで接合面の不
純物を除去しつつワイヤ端をボ−ル状に成形して接続す
るものである。このボンディング装置の従来例を第６図
によって説明すると、ローダ４１、フィーダ４２、アン
ローダ４３によって、リードフレームが複数連設された
フレーム枠４５が供給される搬送路と、この搬送路に近
接してボンディングヘッド４６が配設されている。ボン
ディングヘッド４６には駆動軸が直交するように取り付
けられたＸ方向モータ４７およびＹ方向モータ４８が取
り付けられて二次元方向に移動調整され、一定の振動方
向を有するボーン（図示せず）からキャピラリ４９を介
してボンディング対象物に超音波振動が伝達される。リ
ードフレーム４５はＩＣ毎の単位フレームのベッド部上
に半導体チップ５０がマウントされた状態でローダ４１
からフィーダ４２に移送されζフィーダ４２によってリ
ードフレームの所定ボンディング位置がキャピラリの直
下に来ると降下したキャピラリがボンディングワイヤの
当接端に接触してホーンで発生した超音波振動が伝達さ
れてワイヤボンディングが行なわれる。In the construction of a semiconductor device, as shown in FIG. 5, an electrode of a semiconductor chip 10 mounted on a bed portion 7 of a lead frame is bonded to an inner lead 8 connected to an outer lead serving as an external electrode. wire 11
Wire bonding equipment is used to make electrical connections. This wire bonding device transmits ultrasonic imaging generated by an ultrasonic horn to the contact end of the bonding device A7, which is stretched so that both ends are in contact with the electrode of the semiconductor chip and the inner lead of the lead frame. The wire is guided through a sharp beam or wedge of the connected head portion, and the wire ends are formed into a ball shape and connected while removing impurities from the bonding surface using ultrasonic vibration energy. A conventional example of this bonding apparatus will be explained with reference to FIG. 6. A transport path through which a frame frame 45 having a plurality of lead frames arranged in series is supplied by a loader 41, a feeder 42, and an unloader 43, and a A bonding head 46 is provided. An X-direction motor 47 and a Y-direction motor 48 are attached to the bonding head 46 so that their drive axes are perpendicular to each other, and are adjusted to move in two dimensions. Ultrasonic vibrations are transmitted to the bonding object via 49. The lead frame 45 is loaded onto the loader 41 with the semiconductor chip 50 mounted on the bed portion of the unit frame for each IC.
When the predetermined bonding position of the lead frame is brought directly below the capillary by the ζ feeder 42, the lowered capillary contacts the contact end of the bonding wire, and the ultrasonic vibrations generated by the horn are transmitted, resulting in wire bonding. will be carried out.

しかしながらこのような従来のボンディング装置では、
ボンディングワイヤの当接端に供給される超音波の振動
方向は例えばリードフレーム搬送方向と直角な一方向だ
けであり、当接端での超音波振動がフィーダ移動方向（
Ｘ方向）とこれに直角な方向（Ｙ方向）とで異なる。こ
のため、ワイヤ先端部の振動方向がワイヤの引出し方向
とは必ずしも一致せずボールのつぶれ径が異なる結果、
接合力が方向によってばらつく問題点がある。However, with such conventional bonding equipment,
The vibration direction of the ultrasonic waves supplied to the contact end of the bonding wire is, for example, only one direction perpendicular to the lead frame transport direction, and the ultrasonic vibration at the contact end is in the feeder movement direction (
(X direction) and a direction perpendicular to this (Y direction). For this reason, the vibration direction of the wire tip does not necessarily match the wire pulling direction, resulting in a different ball collapse diameter.
There is a problem that the bonding force varies depending on the direction.

〔発明の目的〕[Purpose of the invention]

本発明は、ボンディングワイヤの引出し方向に接合力が
影響されず、良質なワイヤボンディングが可能なボンデ
ィング装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a bonding device that is capable of performing high-quality wire bonding without affecting bonding force in the direction in which the bonding wire is drawn out.

゛〔発明の概要〕 本発明に係るボンディング装置は、ボンディングワイヤ
の引出し方向に近い超音波振動方向を有する複数のボン
ディングヘッドを備えてワイヤの引出し方向に応じて最
適な超音波振動を導くようにしたことを特徴としている
。[Summary of the Invention] A bonding device according to the present invention is provided with a plurality of bonding heads having a direction of ultrasonic vibration close to the direction in which the bonding wire is drawn out, so as to guide optimal ultrasonic vibration according to the direction in which the wire is drawn out. It is characterized by what it did.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明を図示する実施例によって具体的に説明す
る。EMBODIMENT OF THE INVENTION Hereinafter, the present invention will be specifically explained with reference to illustrative examples.

第１図は本発明の一実施例の平面図である。ローダ１、
フィーダ２、アンローダ３によって搬送路が形成され、
単位リードフレーム５が複数連設されたリードフレーム
４がローダ１からアンローダ３に向かって供給されるよ
うになっている。第４図は搬送路上を供給されるリード
フレーム４の一例の平面図である。リードフレーム４に
はＩＣごとの複数の単位リードフレーム５が連設されて
おり、各単位リードフレーム５はタイバー６によって支
持されたベッド部７と一定の間隔を右して放射状に配設
されたインナリード８と、インナリード８に連設された
アウタリード９とから構成されている。半導体チップ１
０はベッド部７上にマウント材を介して固着されており
、この状（ぶで搬送路上を供給されるようになっている
。FIG. 1 is a plan view of one embodiment of the present invention. loader 1,
A conveyance path is formed by the feeder 2 and the unloader 3,
A lead frame 4 in which a plurality of unit lead frames 5 are arranged in series is supplied from a loader 1 toward an unloader 3. FIG. 4 is a plan view of an example of the lead frame 4 fed on the conveyance path. A plurality of unit lead frames 5 for each IC are connected to the lead frame 4, and each unit lead frame 5 is arranged radially at a constant interval from a bed section 7 supported by tie bars 6. It is composed of an inner lead 8 and an outer lead 9 connected to the inner lead 8. semiconductor chip 1
0 is fixed on the bed portion 7 via a mounting material, and is supplied in this form along the conveyance path.

この搬送路に対し、搬送路と直交する方向（Ｙ方向）に
は第１のＪＢ　ｇ波ボンディングヘッド２０が配設され
、搬送路と同方向（Ｘ方向）には第２の超音波ボンディ
ングヘッド３０が配設されている。両川音波ボンディン
グヘッド２０．３０は超音波率−ン（図示せず）を備え
た同一の構成からなり、それぞれＸ方向モータ２１．３
１およびＹ方向モータ２２，３２が装着されて二次元方
向に移動調整されるようになっている。そして、各超音
波ボンディングヘッド２０．３０におけるキャピラリ２
３．３３から発生する超音波撮動方向は、例えば第５図
のようにインナリード８がＸ方向を向く群とＹ方向を向
く群になっているどきはワイヤ１１の引出し方向もこれ
らの方向となるためＸ方向とＹ方向に選択される。また
、第４図のにうな場合にはワイヤの引出し方向はＸ方向
およびＹ方向のいずれにも一致しないが、この場合は大
多数のワイヤ引出し方向となるＹ１方向Ｊ３よびＹ２方
向と寸ればよい。With respect to this transport path, a first JB g-wave bonding head 20 is arranged in a direction perpendicular to the transport path (Y direction), and a second ultrasonic bonding head 20 is arranged in the same direction as the transport path (X direction). 30 are arranged. The Ryogawa sonic bonding heads 20.30 are of the same construction with an ultrasonic wave (not shown) and each have an X-direction motor 21.3.
1 and Y-direction motors 22 and 32 are attached to adjust the movement in two-dimensional directions. and the capillary 2 in each ultrasonic bonding head 20.30.
3. For example, when the inner leads 8 are arranged in a group facing the X direction and a group facing the Y direction as shown in FIG. Therefore, it is selected in the X direction and the Y direction. In addition, in the case shown in Fig. 4, the wire drawing direction does not coincide with either the X direction or the Y direction, but in this case, the direction in which the wire is drawn out is the Y1 direction J3 and Y2 direction, which is the direction in which the majority of wires are drawn out. good.

また、第２の超音波ボンディングヘッド３０は第１の超
音波ボンディングヘッド２０に対して搬送路の下流側に
配設されているが、この逆であってもよい。Further, although the second ultrasonic bonding head 30 is disposed on the downstream side of the conveyance path with respect to the first ultrasonic bonding head 20, the reverse may be possible.

次に以上の動作を説明する。各単位リードフレームのベ
ッド部上に半導体チップ１ｏがマウントされたリードフ
レーム４はローダ１からフィーダ２に供給され、フィー
ダ２上を移動する。リードフレーム４の先頭の半導体チ
ップ１０が第１の超音波ボンディングヘッド２ｏのキャ
ピラリ２３と同位置に達すると、ボンディングワイヤが
先頭の半導体デツプ１０の電極とリードフレームのイン
ナリードとの間にキャピラリによって掛け渡され、同時
にホーン２３からキャピラリを通じて超音波がボンディ
ングワイヤの当接端に導かれてボールを押しつぶして接
続が行なわれると共に余剰ワイ１７の切断とが行なわれ
る。このボンディングは第１の超音波ボンディングヘッ
ドの振動方向が適用されるあらかじめ定められたワイヤ
について行なわれる。この作業が終了後、リードフレー
ム４はフィーダ２上を移動し、２番目の半導体ブップと
インナリードとを同様にワイヤボンディングする。Next, the above operation will be explained. A lead frame 4 on which a semiconductor chip 1o is mounted on the bed portion of each unit lead frame is supplied from a loader 1 to a feeder 2 and moves on the feeder 2. When the leading semiconductor chip 10 of the lead frame 4 reaches the same position as the capillary 23 of the first ultrasonic bonding head 2o, the bonding wire is inserted between the electrode of the leading semiconductor depth 10 and the inner lead of the lead frame by the capillary. At the same time, ultrasonic waves are guided from the horn 23 through the capillary to the abutting end of the bonding wire to crush the ball to establish the connection and to cut off the excess wire 17. This bonding is performed on a predetermined wire to which the vibration direction of the first ultrasonic bonding head is applied. After this work is completed, the lead frame 4 is moved on the feeder 2, and the second semiconductor bump and the inner lead are similarly wire-bonded.

そして、第２図のようにリードフレーム４上の先頭の半
導体チップが第２の超音波ボンディングヘッド３０に達
すると、キャピラリ３３から超音波振動が残りのワイヤ
ボンディング部に伝達されてワイヤボンディングが行な
われる。第２の超音波ボンディングヘッドによる振動方
向および第１の超音波ボンディングヘッドによる振動方
向はそれぞれワイヤの引出し方向に権力合致させて選択
されているため接続部においては方向によって差異のな
い均一なボール部が形成され、確実な接続が行なわれる
。続いて、第３図のように、フィーダ２上を送られて超
音波ボンディングヘッド３０を用いたボンディングが続
行されてアンローダ３７Ｊ１ら搬出される。When the leading semiconductor chip on the lead frame 4 reaches the second ultrasonic bonding head 30 as shown in FIG. 2, ultrasonic vibrations are transmitted from the capillary 33 to the remaining wire bonding parts to perform wire bonding. It will be done. The direction of vibration by the second ultrasonic bonding head and the direction of vibration by the first ultrasonic bonding head are selected to match the direction in which the wire is pulled out, so that the connection part has a uniform ball portion with no difference depending on the direction. is formed and a secure connection is made. Subsequently, as shown in FIG. 3, the sheet is fed over the feeder 2, bonding using the ultrasonic bonding head 30 is continued, and the sheet is unloaded from the unloader 37J1.

以上の実施例においてはボンディングヘッドを２個どし
ているが、一般的には複数であればいくつでもよい。し
かし、ボンディングヘッドが多くなると制御が複雑化す
るため２１１！ｉＩの場合が最も効果が大きい。In the above embodiment, two bonding heads are used, but in general, any number of bonding heads may be used as long as there are more than two. However, as the number of bonding heads increases, control becomes complicated, so 211! The effect is greatest in case of iI.

（発明の効果〕 以上のとおり本発明によれば、ワイヤの引出し方向にほ
ぼ合致した振動方向の責なる複数のボンディングヘッド
を備えているため方向によって差のない信頼性の高い確
実な接続が可能となる。(Effects of the Invention) As described above, according to the present invention, since a plurality of bonding heads are provided which are responsible for the vibration direction that almost coincides with the direction in which the wire is pulled out, it is possible to make a highly reliable and secure connection with no difference depending on the direction. becomes.

また、ボンディングヘッドが複数であることから、生産
効率が良くかつ微小ピッチのリード部にもボンディング
が可能となる。Furthermore, since there are a plurality of bonding heads, production efficiency is high and bonding can be performed even on lead portions with a minute pitch.

【図面の簡単な説明】[Brief explanation of drawings]

第１図、第２図および第３図は本発明の一実施例および
その動作を示す平面図、第４図はリードフレームの一例
を示す平面図、第５図はリードフレームの他の例を示す
斜視図、第６図は従来％置の平面図である。 １．２．３・・・搬送路、５・・・リードフレーム、７
・・・ベッド部、８・・・インナリード、１０・・・半
導体チップ、２０・・・第１の超音波ボンディングヘッ
ド、３０・・・第２の超８波ボンディングヘッド、２３
゜゛　３３・・・キャピラリ。 出願人代理人　　佐　　藤　　−離 島　１　図 色２　図 ６３　図1, 2, and 3 are plan views showing an embodiment of the present invention and its operation, FIG. 4 is a plan view showing an example of a lead frame, and FIG. 5 is a plan view showing another example of the lead frame. The perspective view shown in FIG. 6 is a plan view of the conventional % position. 1.2.3... Conveyance path, 5... Lead frame, 7
. . . bed portion, 8 . . . inner lead, 10 . . . semiconductor chip, 20 .
゜゛ 33...Capillary. Applicant's agent Sato -Remote island 1 Color 2 Figure 63 Figure

Claims (1)

【特許請求の範囲】 １、リードフレームのベッド部上にマウントされた半導
体チップの電極とリードフレームのインナリードとに掛
け渡されたボンディングワイヤの当接端にホーンから超
音波振動を導いて接続するボンディング装置において、 ボンディングワイヤの引出し方向に近い超音波振動方向
を有する複数のボンディングヘッドを備えたことを特徴
とするワイヤボンディング装置。 ２、インナリードがリードフレーム搬送方向およびこれ
に直角方向に配設されたリードフレームに対し、リード
フレーム搬送方向に一致した振動方向を有する第１の超
音波発振器と、前記リードフレーム搬送方向に直交する
振動方向を有する第２の超音波発振器とを備えてなる特
許請求の範囲第１項記載のワイヤボンディング装置。[Claims] 1. Connection by guiding ultrasonic vibration from a horn to the abutting end of a bonding wire stretched between the electrode of a semiconductor chip mounted on the bed portion of the lead frame and the inner lead of the lead frame. What is claimed is: 1. A wire bonding device comprising: a plurality of bonding heads having an ultrasonic vibration direction close to the bonding wire pulling direction. 2. A first ultrasonic oscillator having a vibration direction that coincides with the lead frame transport direction, and a first ultrasonic oscillator orthogonal to the lead frame transport direction, for a lead frame whose inner lead is disposed in the lead frame transport direction and in a direction perpendicular to the lead frame transport direction. 2. The wire bonding apparatus according to claim 1, further comprising a second ultrasonic oscillator having a vibration direction.
JP29756185A 1985-12-28 1985-12-28 Wire bonding device Pending JPS62156828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29756185A JPS62156828A (en) 1985-12-28 1985-12-28 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29756185A JPS62156828A (en) 1985-12-28 1985-12-28 Wire bonding device

Publications (1)

Publication Number Publication Date
JPS62156828A true JPS62156828A (en) 1987-07-11

Family

ID=17848137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29756185A Pending JPS62156828A (en) 1985-12-28 1985-12-28 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS62156828A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08153759A (en) * 1994-11-29 1996-06-11 Nec Yamagata Ltd Single-point bonder and manufacture of semiconductor device
US8008183B2 (en) * 2007-10-04 2011-08-30 Texas Instruments Incorporated Dual capillary IC wirebonding
CN109671651A (en) * 2018-12-20 2019-04-23 广东工业大学 A kind of ultrasound release type Micro-LED flood tide transfer method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08153759A (en) * 1994-11-29 1996-06-11 Nec Yamagata Ltd Single-point bonder and manufacture of semiconductor device
US8008183B2 (en) * 2007-10-04 2011-08-30 Texas Instruments Incorporated Dual capillary IC wirebonding
CN109671651A (en) * 2018-12-20 2019-04-23 广东工业大学 A kind of ultrasound release type Micro-LED flood tide transfer method

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