JP2500655B2 - Wire-bonding method and device - Google Patents

Wire-bonding method and device

Info

Publication number
JP2500655B2
JP2500655B2 JP5293254A JP29325493A JP2500655B2 JP 2500655 B2 JP2500655 B2 JP 2500655B2 JP 5293254 A JP5293254 A JP 5293254A JP 29325493 A JP29325493 A JP 29325493A JP 2500655 B2 JP2500655 B2 JP 2500655B2
Authority
JP
Japan
Prior art keywords
bonding
wire
capillary
ball
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5293254A
Other languages
Japanese (ja)
Other versions
JPH07147296A (en
Inventor
▲隆▼文 木塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5293254A priority Critical patent/JP2500655B2/en
Publication of JPH07147296A publication Critical patent/JPH07147296A/en
Application granted granted Critical
Publication of JP2500655B2 publication Critical patent/JP2500655B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
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    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ワイヤーボンディング
方法及びその装置に関し、特に半導体チップの小型化・
高集積化に伴う微小ボンディングパッドに対応し、かつ
高速なボンディングができるボンディング方法とその装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method and apparatus therefor, and more particularly to miniaturization of semiconductor chips.
The present invention relates to a bonding method and apparatus capable of high-speed bonding, which corresponds to a minute bonding pad accompanying high integration.

【０００２】[0002]

【従来の技術】従来、半導体チップのワイヤーボンディ
ング方法としては、ボールボンディングとウェットボン
ディングがある。2. Description of the Related Art Conventionally, there have been ball bonding and wet bonding as wire bonding methods for semiconductor chips.

【０００３】ボールボンディング法では図３（ａ），
（ｂ）に示すように、キャピラリーツール１にワイヤー
２を通し、ワイヤー先端を放電加熱により溶融させ、ボ
ール３を形成し、キャピラリーツールによりボール３を
半導体チップ４上に圧着する。圧着により形成されるボ
ール径はワイヤー径の３〜４倍となる。また、こうした
ボールボンディング法においてはワイヤー２はボール３
からほぼ垂直に立ち上がる為、配線高さが高くなる。こ
れらは最近特に半導体ＰＫＧの小型に伴うチップ縮小化
のネックとなっており、この解決策として特開平４−２
５５２３７号公報ではボールボンダーでリード側にて従
来の２点ボンディングを行う方法が述べられている。そ
の方法を図５に示す。同公報によれば従来のボールボン
ディング方法と同じシーケンスにてボール形成後、内部
リードにボンディングを行い、引き続きリードと半導体
チップ間を連続してボンディングしている。これにより
リード側から半導体チップへのボンディングにおけるワ
イヤーはリード側立上がり部では、ボール形成とは何ら
関係しない為、配線されるワイヤー形状は通常のボール
ボンディング方法よりワイヤー高さが低く出来るとして
いる。In the ball bonding method, as shown in FIG.
As shown in (b), the wire 2 is passed through the capillary tool 1, the tip of the wire is melted by discharge heating to form the ball 3, and the ball 3 is pressure-bonded onto the semiconductor chip 4 by the capillary tool. The diameter of the ball formed by pressure bonding is 3 to 4 times the diameter of the wire. Further, in such a ball bonding method, the wire 2 is connected to the ball 3
Since it rises almost vertically from, the wiring height becomes high. Recently, these have become a bottleneck for reducing the size of the semiconductor PKG, especially as the size of the semiconductor PKG decreases.
Japanese Patent No. 55237 describes a conventional method of performing two-point bonding on the lead side with a ball bonder. The method is shown in FIG. According to the publication, balls are formed in the same sequence as in the conventional ball bonding method, then the internal leads are bonded, and then the leads and the semiconductor chip are continuously bonded. As a result, the wire in the bonding from the lead side to the semiconductor chip has nothing to do with ball formation at the lead side rising portion, so that the wire shape to be wired can be made lower than the normal ball bonding method.

【０００４】一方、ウェッジボンディング方法において
は、図４（ａ），（ｂ）に示される様にボンディング後
の圧着径はウェッジ方式の為ボールボンディング方法に
比べ確実に小さく、微小ボンディングパッドのチップに
使用されている。しかしながら、ウェッジ方式は基本的
にボンディングする方向が一定方向に限定される為、半
導体チップのボンディングにおいては、１ワイヤー毎に
チップ自体を回転させる必要があり、ボンディングスピ
ードの点でボールボンディング法に及ばない。この点に
関し、特公平２−１３７３４１号公報ではスピードアッ
プ手段が示されているが前述のチップ自体の回転を要す
る事への解決手段は示されていない。On the other hand, in the wedge bonding method, as shown in FIGS. 4 (a) and 4 (b), since the pressure bonding diameter after bonding is the wedge method, it is surely smaller than that of the ball bonding method, and the chip of the fine bonding pad is formed. in use. However, in the wedge method, the bonding direction is basically limited to a fixed direction. Therefore, in the bonding of the semiconductor chip, it is necessary to rotate the chip itself for each wire, and the bonding speed is lower than that of the ball bonding method. Absent. In this regard, Japanese Patent Publication No. 2-137341 discloses speed-up means, but does not show means for solving the above-mentioned rotation of the chip itself.

【０００５】[0005]

【発明が解決しようとする課題】半導体チップの高集積
化・小型化に伴うボンディングパッドの微小化に対応す
るにはウェッジボンディング方法が適当であるが、前述
したように従来の方法ではボンディングスピードが遅く
コストパフォーマンスの上で問題となっている。一方ボ
ールボンディング方法においても図５に示される改善方
法が示されているが従来の２点ボンディングに対し、３
点ボンエィング方法となる為、従来のボールボンディン
グ方法には劣り、今後多ピン化動向に対しては、やはり
スピードの点で問題となる。The wedge bonding method is suitable for coping with the miniaturization of the bonding pad accompanying the high integration and miniaturization of the semiconductor chip. However, as described above, the conventional method has a high bonding speed. It is a problem in terms of cost performance late. On the other hand, the ball bonding method also shows the improved method shown in FIG.
Since it is a point bonding method, it is inferior to the conventional ball bonding method, and it will still be a problem in terms of speed with respect to the trend of increasing the number of pins in the future.

【０００６】[0006]

【課題を解決するための手段】本発明のワイヤーボンデ
ィング方法は、従来のボールボンディング方法で用いら
れる円錐形上のキャピラリーツールを通して供給される
ワイヤーをその先端部において屈曲させる事により第１
ボンディングのキャピラリー加工時にワイヤー抜けを防
止させ確実にワイヤー先端をボンディング面に圧着し、
引き続きワイヤーを配線方向に移動させながら再びキャ
ピラリーを降下させて第２ボンディングを完了する。第
２ボンディング後キャピラリーは再び上昇してワイヤー
を切断する事によりワイヤー配線が完了する。According to the wire bonding method of the present invention, the wire supplied through the conical capillary tool used in the conventional ball bonding method is bent at the tip end thereof.
Prevents the wire from coming off when bonding capillaries and securely crimps the wire tip to the bonding surface.
Then, the capillary is lowered again while moving the wire in the wiring direction to complete the second bonding. After the second bonding, the capillary is raised again and the wire is cut to complete the wire wiring.

【０００７】上記ボンディング方法を実現するボンディ
ング装置は従来のボールボンディング装置において、キ
ャピラリーツール先端より出ているワイヤー先端を強制
的に屈曲させるワイヤー屈曲部を有している。The bonding apparatus for realizing the above bonding method has a wire bending portion for forcibly bending the wire tip protruding from the tip of the capillary tool in the conventional ball bonding apparatus.

【０００８】[0008]

【実施例】以下図１および図２を参照し、本発明の実施
例を説明する。回転軸対称形上を有する従来の円錐形状
のキャピラリー１の中心貫通穴を通して供給されるボン
ディングワイヤー２はキャピラリー先端より長さＬ（約
１ｍｍ）だけ出た状態にある（図２（ａ））。このワイ
ヤー先端３はキャピラリー上下駆動部と連動したワイヤ
ー屈曲用ロッド４によりキャピラリー加工前にロッド４
のスライド運動によりキャピラリー１下面にて横方向に
曲げられる（図２（ｂ））。この後キャピラリー１はイ
ンナーリード５に向けて下降しボンディング動作を加工
する。ワイヤー２は屈曲されている為ワイヤー抜けは生
ぜずワイヤーにテンションがかかった状態でワイヤー先
端部３が確実にリード面に圧着される（図２（ｃ））。
第一ボンディング後キャピラリー１は上昇すると共に第
二ボンディング地点である半導体チップ６上に移動し、
上限に達した後再び下降して半導体チップ６上に圧着さ
れる（図２（ｄ））。この後キャピラリー１が上昇し、
キャピラリー先端からチップ６面までの距離がＬになっ
た時点で（図２（ｅ））キャピラリー上部にあるワイヤ
ーカットクランプ７が閉じキャピラリー上昇する事によ
りワイヤー切断が実行される（図２（ｅ））。この時キ
ャピラリー先端から出ているワイヤー長はＬとなる。キ
ャピラリーが引き続き上昇し、上限付近でワイヤー屈曲
用ロッド４が作動し、ワイヤーが曲げられキャピラリー
は次のボンディング位置（次のインナーリード部）へ移
動して、ボンディングサイクルを完了する。以上のサイ
クルを繰り返される事によりリード，半導体チップ間の
ボンディングが行なわれる。Embodiments of the present invention will be described below with reference to FIGS. The bonding wire 2 supplied through the center through hole of the conventional conical capillary 1 having a rotational axis symmetry is in a state of protruding by a length L (about 1 mm) from the tip of the capillary (FIG. 2 (a)). This wire tip 3 is connected to the vertical driving unit of the capillary by a wire bending rod 4 before the capillary processing.
By the sliding motion of (1), the lower surface of the capillary 1 is bent laterally (FIG. 2B). After this, the capillary 1 descends toward the inner lead 5 to process the bonding operation. Since the wire 2 is bent, the wire does not come off, and the wire tip portion 3 is securely crimped to the lead surface while the wire is under tension (FIG. 2 (c)).
After the first bonding, the capillary 1 rises and moves onto the semiconductor chip 6 which is the second bonding point,
After reaching the upper limit, it descends again and is pressure-bonded onto the semiconductor chip 6 (FIG. 2D). After this, the capillary 1 rises,
When the distance from the tip of the capillary to the surface of the tip 6 becomes L (FIG. 2 (e)), the wire cut clamp 7 at the upper part of the capillary is closed and the capillary is lifted to execute the wire cutting (FIG. 2 (e)). ). At this time, the wire length protruding from the tip of the capillary is L. The capillary continues to rise, the wire bending rod 4 operates near the upper limit, the wire is bent, and the capillary moves to the next bonding position (next inner lead portion), completing the bonding cycle. By repeating the above cycle, bonding between leads and semiconductor chips is performed.

【０００９】また、従来のボールボンディング方法で用
いられるキャピラリーを用いているので、ウェッジを用
いる時のように方向性が規制されないのでチップを回転
させる必要がなくなりボンディングスピードを低下させ
ることはない。Further, since the capillaries used in the conventional ball bonding method are used, the directionality is not regulated as in the case of using wedges, so that it is not necessary to rotate the chip and the bonding speed is not lowered.

【００１０】[0010]

【発明の効果】以上説明したように本発明は、従来のボ
ールボンディング装置においてワイヤー屈曲部を付加す
る事によりボール形成する事なく全方向性を持つウェッ
ジボンディング方法を実現した。これにより従来のボー
ルボンディングと同等のスピードでウェッジボンディン
グを実現し、ウェッジボンディングの利点である微小パ
ッド対応かつ低ループの高速ボンディングが可能となる
という結果を有する。また、実施例の説明では第一ボン
ディングはインナーリードであったが、半導体チップ側
であっても差支えないことは言うまでもない。As described above, the present invention realizes a wedge bonding method having omnidirectionality without forming a ball by adding a wire bending portion in the conventional ball bonding apparatus. As a result, wedge bonding can be realized at a speed equivalent to that of conventional ball bonding, and high-speed bonding with low loop and small pads, which is an advantage of wedge bonding, can be achieved. Further, in the description of the embodiments, the first bonding is the inner lead, but it goes without saying that it does not matter even if it is on the semiconductor chip side.

【００１１】さらにワイヤー屈曲用ロッド４としては、
従来のボンディング方法で用いらえていたボール形成用
電極ロッドを使うことも考えられる。Further, as the wire bending rod 4,
It is also possible to use an electrode rod for ball formation which has been used in the conventional bonding method.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例を説明する概略図。FIG. 1 is a schematic diagram illustrating an embodiment of the present invention.

【図２】本発明の動作シーケンスを示す工程図。FIG. 2 is a process diagram showing an operation sequence of the present invention.

【図３】従来のボールボンディング方法を説明する概略
図。FIG. 3 is a schematic view illustrating a conventional ball bonding method.

【図４】従来のウェッジボンディング方法を説明する概
略図。FIG. 4 is a schematic diagram illustrating a conventional wedge bonding method.

【図５】従来のボールボンディング方法の改良方法を説
明する概略図。FIG. 5 is a schematic diagram illustrating an improved method of the conventional ball bonding method.

【符号の説明】[Explanation of symbols]

１ キャピラリーツール ２ ボンディングワイヤー ３ ボンディングワイヤー先端部 ４ ワイヤー屈曲用ロッド ５ インナーリード ６ 半導体チップ ７ ワイヤーカットクランプ ８ ワイヤーボール ９ ウェッジ 1 Capillary Tool 2 Bonding Wire 3 Bonding Wire Tip 4 Wire Bending Rod 5 Inner Lead 6 Semiconductor Chip 7 Wire Cut Clamp 8 Wire Ball 9 Wedge

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 第一ボンディングと第二ボンディングを
円錐形状のキャピラリーツールを通して供給されるワイ
ヤーで接続するワイヤーボンディング方法において、前
記第一ボンディグ工程の前にワイヤーを折り曲げる工程
を有することを特徴とするワイヤーボンディング方法。1. A wire bonding method for connecting a first bonding and a second bonding with a wire supplied through a conical capillary tool, characterized in that it comprises a step of bending the wire before the first bonding step. Wire bonding method. 【請求項２】 前記キャピラリーツールが中心に貫通穴
を有する円錐形状であることを特徴とする請求項１記載
のワイヤーボンディング方法。2. The wire bonding method according to claim 1, wherein the capillary tool has a conical shape having a through hole at the center. 【請求項３】 第一ボンディングと第二ボンディングを
キャピラリーツールから供給されるワイヤーで接続する
ワイヤーボンディング装置において、ステッチボンディ
ングする為のキャピラリー部と、ワイヤー切断後にキャ
ピラリーツール先端部のワイヤー先端を屈曲する為のロ
ッド部とを有することを特徴とするワイヤーボンディン
グ装置。3. A wire bonding apparatus for connecting a first bonding and a second bonding with a wire supplied from a capillary tool, wherein a capillary part for stitch bonding and a wire tip of a tip part of the capillary tool are bent after cutting the wire. And a rod portion for the purpose of the wire bonding apparatus.
JP5293254A 1993-11-24 1993-11-24 Wire-bonding method and device Expired - Fee Related JP2500655B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5293254A JP2500655B2 (en) 1993-11-24 1993-11-24 Wire-bonding method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5293254A JP2500655B2 (en) 1993-11-24 1993-11-24 Wire-bonding method and device

Publications (2)

Publication Number Publication Date
JPH07147296A JPH07147296A (en) 1995-06-06
JP2500655B2 true JP2500655B2 (en) 1996-05-29

Family

ID=17792450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5293254A Expired - Fee Related JP2500655B2 (en) 1993-11-24 1993-11-24 Wire-bonding method and device

Country Status (1)

Country Link
JP (1) JP2500655B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064117A (en) 2000-08-22 2002-02-28 Mitsubishi Electric Corp Wire bonding method and apparatus, and semiconductor device
US7918378B1 (en) * 2010-08-06 2011-04-05 National Semiconductor Corporation Wire bonding deflector for a wire bonder
US20120032354A1 (en) * 2010-08-06 2012-02-09 National Semiconductor Corporation Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds
JP5734236B2 (en) * 2011-05-17 2015-06-17 株式会社新川 Wire bonding apparatus and bonding method

Also Published As

Publication number Publication date
JPH07147296A (en) 1995-06-06

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