JPS62152143A - Formation of bump - Google Patents

Formation of bump

Info

Publication number
JPS62152143A
JPS62152143A JP60291974A JP29197485A JPS62152143A JP S62152143 A JPS62152143 A JP S62152143A JP 60291974 A JP60291974 A JP 60291974A JP 29197485 A JP29197485 A JP 29197485A JP S62152143 A JPS62152143 A JP S62152143A
Authority
JP
Japan
Prior art keywords
wire
ball
bump
capillary
recessed part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60291974A
Other languages
Japanese (ja)
Inventor
Tetsuo Ando
安藤 鉄男
Koichiro Atsumi
幸一郎 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60291974A priority Critical patent/JPS62152143A/en
Publication of JPS62152143A publication Critical patent/JPS62152143A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

PURPOSE:To obtain a favorably bonding bump by a method wherein a ball is formed at the tip of a wire inserted in a capillary and after the ball is pressed and bonded to the part to be bonded, a recessed part is formed in the wire just over the ball and the wire is made to ascend and is cut from the recessed part. CONSTITUTION:An electric torch 3 is made to oppose to the tip of a wire 2 consisting of gold, copper, Al or the likes, inserted in a capillary 1, and a ball 4 is formed on the tip of the wire 2 by generating sparks between the electric torch 3 and the wire 2. Then, the capillary 1 is made to descend, the ball 4 is pressed on an electrode pad 6, which is used as the part to be bonded, of a semiconductor element 5 and the ball 4 is fused by ultrasonic heating and is fixed to the electrode pad 6. Then, when the capillary 1 is made to ascend, a recessed part forming jig 8 having an edge part 7 comes advancing over the ball 4 to form a recessed part in the wire 2 right over the ball 4. Then, with the jig 8 made to retrogress, a clamper 11 is made to ascend pinching the wire 2. Thereby, the wire 2 is cut at the recessed part and a bump 12 is formed on the pad 6.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体素子の4極パツド上に外部端子を接続
するためのバンプ全形成する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for completely forming bumps for connecting external terminals on four-pole pads of a semiconductor device.

〔発明の技術的イ景とその間1点〕 半・4体素子の1極パツドと外部端子とt−気的に接続
する場合、これら両者をワイヤで接続する、いわゆるワ
イヤボンディングが知られている。しかしながら、ワイ
ヤボンディングの場合、ワイヤの立ち上り高さが必要と
なるから、全体の高さ寸法を十分小さくすることがでさ
ないという欠点がある。また、ワイヤボンディングは接
続個所ごとにワイヤを配線しなければならないから、接
続個所が多い場合には作業能率が低下するということも
ある。
[Technical view of the invention and one point in between] When connecting a single-pole pad of a semi-quad element and an external terminal in a t-air manner, so-called wire bonding is known, in which the two are connected with a wire. . However, in the case of wire bonding, since the rising height of the wire is required, there is a drawback that the overall height dimension cannot be made sufficiently small. Furthermore, in wire bonding, wires must be routed for each connection point, so if there are many connection points, work efficiency may be reduced.

このような欠点全除去する磁極パッドと外部端子との接
続方法として、上記゛シ極パッドにバンプを形成し、こ
のバンプに上記外部端子k +H続するということが行
なわれている。バンプと利用した接続方法によれば、4
極パツドと外部端子とがバンプを介して直接的に接合固
定されるから、ワイヤを用いた場合に比べて接合部分の
高さを低くすることができ、またたとえばフィルムなど
に設けられた多数の外部端子r4極パッドに1度の工程
で接合固定することができるなどの利点をMする。
As a method of connecting the magnetic pole pad and the external terminal to completely eliminate such defects, a bump is formed on the pole pad, and the external terminal k+H is connected to this bump. According to the bump and the connection method used, 4
Since the pole pad and the external terminal are directly bonded and fixed via the bump, the height of the bonded part can be lowered compared to when wires are used. M has the advantage that it can be bonded and fixed to the external terminal r4-pole pad in one step.

ところで、従来電極パッドにバンプ全形成する方法とし
ては、特開昭59−208751号公報に示されるもの
が知られている。この公知技術は、バンプ全ワイヤボン
ディングによって形成するようにしている。つまり、キ
ャピラリに挿通されたワイヤの先端にボール金形成した
ならば、このボールをポンディングパッドに接合する。
By the way, as a conventional method of forming all bumps on an electrode pad, the method disclosed in Japanese Patent Laid-Open No. 59-208751 is known. In this known technique, the entire bump is formed by wire bonding. That is, once a ball is formed at the tip of a wire inserted into a capillary, this ball is bonded to a bonding pad.

そののち、ワイヤをクランパなどで引きちぎることによ
って上記パッド上にバンプを形成するようにしている。
Thereafter, a bump is formed on the pad by tearing off the wire with a clamper or the like.

しかしながら、ワイヤをクランパによって引きちぎるよ
うにしたのでは、ボールに残るワイヤの長さ寸法が一定
しない。そして、そのような状態のバンプの上方に外部
端子を位0決めしたのち、/JOEおよび加熱して接合
するようにすると、外部端子とバンプとの接合状態、す
なわち接合強1里が一定とならなかったり、接合不良を
招くなどの欠点が生じる。
However, if the wire is torn off by a clamper, the length of the wire remaining in the ball is not constant. Then, after positioning the external terminal above the bump in such a state, if you use /JOE and heat to bond it, the bonding condition between the external terminal and the bump, that is, the bond strength 1ri, will be constant. There may be disadvantages such as failure or poor bonding.

〔発明の目的〕[Purpose of the invention]

この発明は、ワイヤボンディングを用いてバンプを形成
した場合に、そのバンプの形状’t 一定にすることが
できるようにしたバンプ形成方法を提供することを目的
とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a bump forming method that makes it possible to keep the shape of the bump constant when the bump is formed using wire bonding.

〔発明の概要〕[Summary of the invention]

この発明は、キャピラリに挿通されたワイヤの先端にボ
ールを形成し、このボールを被接合部にIIprE接合
したのち、上記ワイヤの上記ボールの直上の部分に凹部
を形成し、ついで上記ワイヤを引張ってこのワイヤを上
記凹部個所から切14fiすることにより、ボールに残
るワイヤの長さを一定にするようにしたものである。
In this invention, a ball is formed at the tip of a wire inserted into a capillary, this ball is joined to a part to be joined by IIprE, a recess is formed in a portion of the wire directly above the ball, and then the wire is pulled. By cutting the lever wire 14fi from the recessed portion, the length of the wire remaining on the ball is made constant.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図面を蚕照して説明する。 An embodiment of the present invention will be described below with reference to the drawings.

まず、@1図に示すようにキャピラリ1に挿通され之金
* M eアルミニュウムなどの材料からなるワイヤ2
の先端に1に気トーチ3を対間させ、上記ワイヤ2との
間でスパークを発生させることによシ、上記ワイヤ2の
先端にボール4t−形成する。つぎに、第2図に示すよ
うに上記キャピラリ1を下降させて仮接合部である半導
体素子5の磁極パッド6上に上記ボーれて発熱するとと
もに、図示せぬヒータブロックからの熱も上記半導体素
子5を介して伝わるから、上記ボール4は電極パッド6
に固着されることになる。
First, as shown in Figure 1, a wire 2 made of a material such as aluminum is inserted into a capillary 1.
A ball 4t is formed at the tip of the wire 2 by interposing a pair of torches 3 to the tip of the wire 2 and generating sparks between them and the wire 2. Next, as shown in FIG. 2, the capillary 1 is lowered to bulge onto the magnetic pole pad 6 of the semiconductor element 5, which is a temporary bonding part, and generate heat. Since the transmission is via the element 5, the ball 4 is connected to the electrode pad 6.
It will be fixed to.

上記ボール4が電極パッド6に固着されたのち、第3図
に示すようにキャピラリ1が上昇する。ついで、上記ボ
ール4の上方に鋭利なエツジ部7を有する凹部形成治具
8が前進してきて上記ワイヤ2の上記ボール4の直上の
個所に46 +sLに拡大して示すように凹部y2形成
する。
After the ball 4 is fixed to the electrode pad 6, the capillary 1 is raised as shown in FIG. Next, a recess forming jig 8 having a sharp edge 7 above the ball 4 moves forward to form a recess y2 on the wire 2 directly above the ball 4 as shown enlarged to 46+sL.

ワイヤ2に凹部9が形成されると、上記凹部形成冶具8
が後退するとともに、第4図に示すようにキャピラリ1
の上方に設けられたクランパ1ノがワイヤ2を沃持し、
この状態でクランパ11が上昇する。し次がって、上記
ワイヤ2は凹部形成冶具8によ、って形成された凹部す
の個所から切断さn、これによって電極パッド6上ニハ
ンプ12が形成される。
When the recess 9 is formed in the wire 2, the recess forming jig 8
As the capillary 1 moves back, as shown in Fig.
A clamper 1 provided above holds the wire 2,
In this state, the clamper 11 is raised. Next, the wire 2 is cut from the recess formed by the recess forming jig 8, thereby forming a hump 12 on the electrode pad 6.

このようにして形成されるバンプ12は、ワイヤ2に予
め凹部9を形成してからこのワイヤ2を切断するので、
このバンプ12に残るワイヤ2の長さを一定に、しかも
ボール4の直上部に凹部9f:形成するため、十分短か
くすることができる。したがって、上呂己バンプ12に
、g5図に示すように合成樹脂製フィルム13から延出
された外部端子14を接続する際、その接続状態である
接合強度を一定にすることができるばかりか、接合不良
を招くこともない。
The bump 12 formed in this way is obtained by forming the recess 9 in the wire 2 in advance and then cutting the wire 2.
Since the length of the wire 2 remaining on the bump 12 is constant and the concave portion 9f is formed directly above the ball 4, it can be made sufficiently short. Therefore, when connecting the external terminal 14 extending from the synthetic resin film 13 to the Uromi bump 12 as shown in Fig. g5, not only can the bonding strength in the connected state be constant, It does not cause poor bonding.

〔発明の効果〕〔Effect of the invention〕

以上述べたようにこの発明は、キャピラリに挿通された
ワイヤの先端にボールを形成し、このボールを被接合部
に押圧接合したのち、上記ワイヤの上記ボールの直上の
部分に凹部を形成し、ついで、上記ワイヤを引張ってこ
のワイヤを上記凹部の個所から切断してバンプを形成す
るようにした。したがって、バンプに残るワイヤの長さ
寸法を十分短かな状態で一定にすることができるから、
上記バンプと外部端子との接合強度を一定にすることが
できるばかりか、接合不良を招くこともないバンプヲ提
供することができる。
As described above, the present invention forms a ball at the tip of a wire inserted into a capillary, press-joins this ball to a part to be joined, and then forms a recess in a portion of the wire directly above the ball, The wire was then pulled to cut the wire from the recess to form a bump. Therefore, since the length of the wire remaining in the bump can be kept constant and sufficiently short,
Not only can the bonding strength between the bump and the external terminal be constant, but also it is possible to provide a bump that does not cause poor bonding.

【図面の簡単な説明】[Brief explanation of drawings]

図面はこの発明の一実施例を示し、第1図乃至第5図は
バンプを形成する手順を順次示した説明図、第6図はワ
イヤに切欠き全形成した状態の拡大図である。 1・・・キャピラリ、2・・・ワイヤ、4・・・ボール
・6・・・電画パッド(a接合、A)、8・・・凹部形
成冶具、す・・・凹部、12・・・バンプ。 出願人代理人 弁理士 鈴 江 武 彦第6図
The drawings show an embodiment of the present invention, and FIGS. 1 to 5 are explanatory diagrams sequentially showing the steps for forming bumps, and FIG. 6 is an enlarged view of the state in which the wire has been completely formed with notches. DESCRIPTION OF SYMBOLS 1... Capillary, 2... Wire, 4... Ball, 6... Electrical pad (A junction, A), 8... Recess formation jig, Su... Recess, 12... bump. Applicant's agent Patent attorney Takehiko Suzue Figure 6

Claims (1)

【特許請求の範囲】[Claims] キャピラリに挿通されたワイヤの先端にボールを形成す
る工程と、上記キャピラリを下降させて上記ボールを被
接合部に押圧接合する工程と、被接合部にボールを接合
して上記キャピラリが上昇したとき上記ワイヤの上記ボ
ールの直上部の部分に凹部を形成する工程と、上記ワイ
ヤを引張りその凹部の個所から切断する工程とを具備し
たことを特徴とするバンプ形成方法。
A step of forming a ball at the tip of the wire inserted into the capillary, a step of lowering the capillary and pressing the ball to the part to be joined, and a step of joining the ball to the part to be joined and raising the capillary. A bump forming method comprising the steps of: forming a recess in a portion of the wire directly above the ball; and pulling the wire and cutting it from the recess.
JP60291974A 1985-12-26 1985-12-26 Formation of bump Pending JPS62152143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60291974A JPS62152143A (en) 1985-12-26 1985-12-26 Formation of bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60291974A JPS62152143A (en) 1985-12-26 1985-12-26 Formation of bump

Publications (1)

Publication Number Publication Date
JPS62152143A true JPS62152143A (en) 1987-07-07

Family

ID=17775872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60291974A Pending JPS62152143A (en) 1985-12-26 1985-12-26 Formation of bump

Country Status (1)

Country Link
JP (1) JPS62152143A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02120836U (en) * 1989-03-15 1990-09-28
US5118370A (en) * 1986-11-07 1992-06-02 Sharp Kabushiki Kaisha LSI chip and method of producing same
US5124277A (en) * 1990-01-10 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Method of ball bonding to non-wire bonded electrodes of semiconductor devices
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
EP0810293A1 (en) * 1996-05-28 1997-12-03 Tanaka Denshi Kogyo Kabushiki Kaisha Gold alloy wire and method for making a bump
US8540136B1 (en) * 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118370A (en) * 1986-11-07 1992-06-02 Sharp Kabushiki Kaisha LSI chip and method of producing same
JPH02120836U (en) * 1989-03-15 1990-09-28
US5124277A (en) * 1990-01-10 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Method of ball bonding to non-wire bonded electrodes of semiconductor devices
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
US5299729A (en) * 1990-09-20 1994-04-05 Matsushita Electric Industrial Co., Ltd. Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
EP0810293A1 (en) * 1996-05-28 1997-12-03 Tanaka Denshi Kogyo Kabushiki Kaisha Gold alloy wire and method for making a bump
US6159420A (en) * 1996-05-28 2000-12-12 Tanaka Denshi Kogyo K.K. Gold alloy wire and method for making a bump
US8540136B1 (en) * 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same
US8936730B2 (en) 2012-09-06 2015-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming apparatus for stud bump formation
US9498851B2 (en) 2012-09-06 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming apparatus for stud bump formation

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