JPS6092672A - Manufacture of acceleration senser - Google Patents
Manufacture of acceleration senserInfo
- Publication number
- JPS6092672A JPS6092672A JP58201197A JP20119783A JPS6092672A JP S6092672 A JPS6092672 A JP S6092672A JP 58201197 A JP58201197 A JP 58201197A JP 20119783 A JP20119783 A JP 20119783A JP S6092672 A JPS6092672 A JP S6092672A
- Authority
- JP
- Japan
- Prior art keywords
- porous silicon
- substrate
- cavity
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001133 acceleration Effects 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】
本発明は、半導体基板に圧電膜を形成して成る加速度セ
ンサの製造方法に関するもので、特にそのカンチレバー
の部分の製造方法に特徴を有するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an acceleration sensor formed by forming a piezoelectric film on a semiconductor substrate, and is particularly characterized by a method for manufacturing the cantilever portion thereof.
圧電体を用いた圧力センサ、加速度センサに９いて多く
の種類が考えられている。これらはいずれも、圧電素子
に加わった圧フハ加速度によってＥＥＸ素子に生じた歪
みを電気的な信号に変換するもので委る。したがって、
圧電素子が圧力、加速度によって変位を生じるように、
圧電素子をカンチレバー部分に形成することが必要とな
る。Many types of pressure sensors and acceleration sensors using piezoelectric bodies have been considered. All of these devices convert distortion caused in the EEX element by pressure acceleration applied to the piezoelectric element into an electrical signal. therefore,
Just as a piezoelectric element causes displacement due to pressure and acceleration,
It is necessary to form the piezoelectric element in the cantilever part.
カンチレバー部分が圧力、加速度によって変位を生じる
ためには、それに接する部分に空洞を設ける必要がある
。半導体基板と圧電素子を組み合わせた加速度センナで
は、半導体基板をエツチングして空洞を形成することが
一般に行われているが、異方性エツチングによるだめに
使用する単結晶シリコン基板の結晶面が制約されたシ、
エツチングの時間が長くなるといった問題が生じる。In order for the cantilever portion to be displaced by pressure and acceleration, it is necessary to provide a cavity in the portion in contact with the cantilever portion. In acceleration sensors that combine a semiconductor substrate and a piezoelectric element, it is common practice to form a cavity by etching the semiconductor substrate, but the crystal plane of the single crystal silicon substrate used is limited by anisotropic etching. Tashi,
A problem arises in that the etching time becomes long.
本発明は、上記のような問題を解決して、カンチレバー
部分の空洞を短時間で形成できる加速度センサの製造方
法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing an acceleration sensor that can solve the above problems and form a cavity in a cantilever portion in a short time.
また、使用する半導体基板も制約されず、信頼性の高い
加速度センナを得ることを目的とする。Furthermore, the present invention aims to obtain a highly reliable acceleration sensor without any restrictions on the semiconductor substrate used.
本発明による加速度センサの製造方法においては、多孔
質シリコンの酸化、エツチングによってカンチレバーの
部分の空洞を形成することによって上記の目的を達成す
るものでめる。すなわち、単結晶シリコンを陽極化成す
ることによって多孔質化させ、この多孔質シリコンが酸
化し易いことを利用して短時間で酸化し、この部分を除
去することによって空洞を形成するものである。また、
カンチレバー部分は、スパッタなどの方法によって圧電
薄膜を形成してこれに電極を形成した構造とするもので
ある。In the method for manufacturing an acceleration sensor according to the present invention, the above object is achieved by forming a cavity in the cantilever portion by oxidizing and etching porous silicon. That is, single-crystal silicon is made porous by anodizing it, and by taking advantage of the fact that this porous silicon is easily oxidized, it is oxidized in a short time, and this portion is removed to form a cavity. Also,
The cantilever portion has a structure in which a piezoelectric thin film is formed by a method such as sputtering, and an electrode is formed on the piezoelectric thin film.
以下、本発明の実施例につき、図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明の実施例を示す正面断面図で、工程順
にＡ−Ｆに分けて示したものである。FIG. 1 is a front sectional view showing an embodiment of the present invention, divided into steps A-F in the order of steps.
単結晶シリコン基板１００表面の所定の部分に窒化シリ
コンｔｉｌｌを形成し、フッ化水素（ＨＦ）２０〜５０
％溶沿中で陽極化成する。♀化シリコン模１１で秒われ
でいない単結晶シリコン基板１００表面から内部に向か
って多孔５ｆシリコン層１２が形成される（Ａ）。ここ
で単結晶シリコン基板ＩＯはＰ型導電性であると陽極化
成が容易である。Silicon nitride till is formed on a predetermined portion of the surface of the single crystal silicon substrate 100, and hydrogen fluoride (HF) is applied at 20 to 50 ml.
% is anodized during welding. A porous 5f silicon layer 12 is formed from the surface of the single-crystal silicon substrate 100, which is not separated by the silicon oxide pattern 11, toward the inside (A). Here, if the single crystal silicon substrate IO has P-type conductivity, anodization is easy.
単結晶シリコン基板ｌＯの表面に窒化シリコン膜１４を
形成し、多孔質シリコン層１２の一部を露出させるよう
にエツチングする。多孔質シリコン層１２の表面がコの
字形となるように露出させ、多孔質シリコン層１２を覆
う窒化シリコン＠１４の部分がカンチレバー部分となる
ようにすると良い。そして、単結晶シリコン基板１０を
高圧酸化ザ
修で酸化して、多孔質シリコン層１２を二酸化シリコン
１２’ とする（Ｂ）。A silicon nitride film 14 is formed on the surface of a single crystal silicon substrate IO, and etched to expose a portion of the porous silicon layer 12. It is preferable that the surface of the porous silicon layer 12 is exposed in a U-shape so that the portion of silicon nitride @14 covering the porous silicon layer 12 becomes a cantilever portion. Then, the single crystal silicon substrate 10 is oxidized by high-pressure oxidation to form the porous silicon layer 12 into silicon dioxide 12' (B).
窒化シリコｙｔｌ１４の上にアルミニウムの下部電極パ
ターン１５を形成する（Ｃ）。この下部４ｉｔ。An aluminum lower electrode pattern 15 is formed on the silicon nitride YTL 14 (C). This lower part is 4 it.
極パターン１５は、カンチレノ（一部分の圧電１１ｋが
形成される部分とその引き出し電極仁なる部分に形成さ
れる。The polar pattern 15 is formed in a cantilever (a part where a part of the piezoelectric 11k is formed and a part where the extraction electrode is formed).
続いて、カンチレノく一部分に圧％膜１６を形成する（
Ｄ）。圧［嗅１６は酸化」１鉛などの圧電薄膜をスパッ
タリングなどの方法によって形成すると良い。もちろん
、その池の材料を用いても良く、また、蒸着などの方法
によっても良い。Subsequently, a pressure film 16 is formed on a portion of the cantilever (
D). A piezoelectric thin film made of lead or the like may be formed by a method such as sputtering. Of course, the material of the pond may be used, or a method such as vapor deposition may be used.
圧電嗅１６の表面にアルミニウムの上部［愼１７を形成
する（Ｅ）。このＥ部電極１７は図示しないが、配線パ
ターンが引き出されるように形成される。An aluminum upper layer 17 is formed on the surface of the piezoelectric sensor 16 (E). Although not shown, this E section electrode 17 is formed so that a wiring pattern is drawn out.
最後に、多孔質シリコンが酸化された二酸化シリコン層
１２′をフッ化水素溶液でエツチングして除去し、カン
チレバー部分の下に空洞１８を形成する（Ｆ）。Finally, the porous silicon oxidized silicon dioxide layer 12' is removed by etching with a hydrogen fluoride solution to form a cavity 18 under the cantilever portion (F).
以上のようにして、単結晶゛シリコン基板上に窒化シリ
コン膵を介してＦＥ電電子子具えたカンチレバーが形成
され、かつカンチレバーの下に空洞の形成された加速度
センサが得られる。In the manner described above, a cantilever equipped with FE electrons is formed on a single-crystal silicon substrate via a silicon nitride pancreas, and an acceleration sensor is obtained in which a cavity is formed under the cantilever.
なお、力／チレバ一部分の形状はシリコン窒化膜のパタ
ーンによって種々変形することができ、それによって感
度を上げたシすることができる。Note that the shape of a portion of the force/tilt lever can be variously modified depending on the pattern of the silicon nitride film, thereby increasing the sensitivity.
カンチレバーに加速度が加−わるとカンチレバーに変化
が生じ、それによって圧電素子にも歪みが生じる。そし
て、加速用に応じた格子振動（共振）が現われ、これを
周波数の位相差として加速度を検出することができる。When acceleration is applied to the cantilever, a change occurs in the cantilever, which causes distortion in the piezoelectric element. Then, lattice vibration (resonance) corresponding to the acceleration appears, and acceleration can be detected using this as a phase difference in frequency.
本発明によれば、カンチレバー部分の空洞の形成が短時
間でできる。したがって、加速度゛センサの製造の工数
を大幅に低減することができる。According to the present invention, the cavity of the cantilever portion can be formed in a short time. Therefore, the number of man-hours for manufacturing the acceleration sensor can be significantly reduced.
また、使用する半導体基板を任意に選択できるので、池
の素子とともに同一基板内に形成したりすることも容易
となる。Furthermore, since the semiconductor substrate to be used can be arbitrarily selected, it becomes easy to form the semiconductor device together with other elements on the same substrate.
第１図は本発明の実施例を示す正面断面図１である。
１’ｌ、１４・・・・・・シリコン窒化膜１２・・・・
・・多孔質シリコン層
１６・・・・・・圧ｌｉｔ＠
特許出願人
東光株式会社FIG. 1 is a front sectional view 1 showing an embodiment of the present invention. 1'l, 14...Silicon nitride film 12...
... Porous silicon layer 16 ... Pressure lit@ Patent applicant Toko Co., Ltd.
Claims (1)
シリコン層を形成し、核表面にシリコ／窒化模を該多孔
質シリコン層の一部が露出するように形成し、該多孔質
シリコン層を酸化し、肢シリコン窒化模上に二つの電極
層に挾まれた圧電膜を形成し、核酸化された多孔質シリ
コン層を除去することを特徴とする加速度センナの製造
方法。A part of the surface of the single crystal silicon substrate is anodized to form a porous silicon layer, a silico/nitride pattern is formed on the core surface so that a part of the porous silicon layer is exposed, and the porous silicon A method for producing an acceleration sensor, comprising: oxidizing the layer, forming a piezoelectric film sandwiched between two electrode layers on a silicon nitride pattern, and removing the oxidized porous silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201197A JPS6092672A (en) | 1983-10-27 | 1983-10-27 | Manufacture of acceleration senser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201197A JPS6092672A (en) | 1983-10-27 | 1983-10-27 | Manufacture of acceleration senser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6092672A true JPS6092672A (en) | 1985-05-24 |
Family
ID=16436952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201197A Pending JPS6092672A (en) | 1983-10-27 | 1983-10-27 | Manufacture of acceleration senser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6092672A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63177872A (en) * | 1986-09-12 | 1988-07-22 | インターメディクス インコーポレーテッド | Speed responsive type heart pacemaker |
| US5801069A (en) * | 1995-09-11 | 1998-09-01 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating thin film piezoelectric device |
| KR100479687B1 (en) * | 2002-05-30 | 2005-03-30 | 한국과학기술연구원 | Cantilever sensor and method for fabrication thereof |
| JP2007222990A (en) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | Method of manufacturing structure with beam portion, and mems device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115887A (en) * | 1981-01-09 | 1982-07-19 | Omron Tateisi Electronics Co | Piezoelectric thin film type electro-mechanical displacement transducing element |
| JPS5837159B2 (en) * | 1974-11-29 | 1983-08-13 | 富士通株式会社 | line printer |
-
1983
- 1983-10-27 JP JP58201197A patent/JPS6092672A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837159B2 (en) * | 1974-11-29 | 1983-08-13 | 富士通株式会社 | line printer |
| JPS57115887A (en) * | 1981-01-09 | 1982-07-19 | Omron Tateisi Electronics Co | Piezoelectric thin film type electro-mechanical displacement transducing element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63177872A (en) * | 1986-09-12 | 1988-07-22 | インターメディクス インコーポレーテッド | Speed responsive type heart pacemaker |
| US5801069A (en) * | 1995-09-11 | 1998-09-01 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating thin film piezoelectric device |
| KR100479687B1 (en) * | 2002-05-30 | 2005-03-30 | 한국과학기술연구원 | Cantilever sensor and method for fabrication thereof |
| JP2007222990A (en) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | Method of manufacturing structure with beam portion, and mems device |
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