JPS60246110A - Semiconductor device - Google Patents

Abstract

PURPOSE:To realize a new high frequency high output semiconductor device having a two-way signal amplifier function by providing the 1st terminal connected to a collector of the 1st transistor (TR), the 2nd terminal connected to a collector of the 2nd TR and the 3rd terminal connected to a common base of the 1st and 2nd TRs. CONSTITUTION:An N-channel epitaxial layer used as a collector region is formed on a P<->-channel silicon substrate, said epitaxial layer is separated electrically into two regions 10', 10'' by a P insulation separating region 15, P-channel base regions 1', 1'' and N<+> emitter regions 2', 2'' are formed on each region, contact windows 4', 4'', 5', 5'', 6', 6'', are formed to surface insulation films 3', 3'', 3''', and base electrode 7', 7'' are connected electrically by an electrode pattern 11. Suppose that most of signals enters a TRT2 when a signal comes from a terminal A1, the signal is amplified by a TRT2 and the result is outputted to an external circuit through a terminal A2. When the signal comes from the terminal A2 conversely, most of the signals enters the TRT1 and is outputted to the external circuit through the terminal A1.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor device, and particularly to a high frequency, high power semiconductor device whose input and output operate bidirectionally.

(Prior Art) Recent advances in the field of communications have been remarkable, such as satellite broadcast communications (DBS) and cable television communications (CATV).
It is thought that new communication fields such as υ will continue to grow in the future. It is also likely that bidirectional communication will become mainstream instead of the conventional unidirectional communication method. In order to cope with such advances and innovations in the communication field, electronic devices, especially active devices, used in communication equipment are required to have new functions.

However, with conventional active devices, that is, high-frequency, high-output transistors, if the grounding type is determined, the amplification direction is limited to only one direction. However, two series of high-frequency, high-output transistor groups must be prepared separately, and all of them must be connected in parallel, making the system itself large.
As the complexity increases, so does the cost, creating a serious obstacle to the widespread use of two-way communication systems.

(Problems to be Solved by the Invention) Therefore, an object of the present invention is to provide a new high-frequency, high-output semiconductor device having a bidirectional signal amplification function that can handle bidirectional communication systems. If all semiconductor devices with such bidirectional signal amplification functions are used, a bidirectional communication system can be easily realized without increasing costs, and the reliability of equipment can be expected to improve by reducing the number of devices. (Means for Solving All Problems) According to the present invention, the collector of one of the first and second transistors whose bases are connected in common and the base of the other transistor are connected via a capacitor, A semiconductor device is obtained in which input and output terminals are connected to the collector of the semiconductor device. Such a semiconductor device has first and second transistor chips electrically separated from each other in a container, the base electrodes of these transistor chips are all connected, and the collector of one transistor chip is connected to the collector of the other transistor chip. The emitter of each transistor is connected through all the capacitors, and the collector of each transistor is connected to the external lead of the entire container.

(Example) Next, the present invention will be explained in more detail with reference to one drawing. First, Fig. 1 and Fig. 2 were completed using known techniques such as diffusion, lithography, and metallization, respectively. A conventional transistor chip and a transistor chip according to an embodiment of the present invention are shown together. If we limit the explanation to NPN type silicon transistors here, conventional transistor chips are manufactured by first making full use of oxidation, diffusion, and phosphorography techniques on an N-type silicon substrate.t) A P-type base region 1 A T-type emitter region 2 is also formed within the P-type base region 1 . Furthermore, an oxide film (8i02) was opened on the silicon substrate using lithography technology.
) or a contact window 4 on the insulating film 3 such as a nitride film (8jllN4). 5. A base electrode 7, an emitter electrode 8, and a collector electrode 9 extending on the surface are connected to the base region, the emitter region 2, and the collector region 10, respectively, via the base electrode 6i.

If such a transistor is to be used with all bases grounded, the input signal must be taken out from the emitter and the output signal must be taken out from the collector, and the reverse operation is not possible, so it has the disadvantage that it cannot be used as is for bidirectional communication. be.

Therefore, in the case of the present invention, as shown in one embodiment shown in FIG.
N used as collector region on p-m silicon substrate
type epitaxial layer is formed, and this epitaxial layer i
Two regions 10' and 10'' are electrically isolated by a P-type insulating isolation region 15, and a P-type base region 1' is provided in each region.
, 1" and N-■ emitter regions 2', 2" are formed, and contact windows 4/2 are formed on the surface insulating films 3', 3", 3"'.
, 4//, 5/, 5/; 6Z 6" is formed and 1
, the base electrodes 7', 7'' are electrically connected through the electrode pattern 11. The collector electrode 9' and the emitter electrode 8'' are electrically connected through the electrode pattern 13 through the capacitive element 12''. Further, the collector electrode 9'' and the emitter electrode 8' are electrically connected at the electrode terminal 14 via the capacitive element 12'.

In the end, the three electrode patterns 11, 13, and 14 form electrode pads for external extraction, forming a three-terminal element. In this case, one terminal 11 is used as a ground terminal, and the remaining two terminals 13 and 14 have the possibility of becoming input/output terminals depending on the direction of the signal. Further, the P-type isolation region 15 in FIG. 2 may be completely electrically insulated from the collector regions 10' and 10'' by a thick insulating film.

Further, the capacitive elements 12', 12'' are formed by overlapping two electrode patterns with a gold insulating film interposed therebetween.

An electrical equivalent circuit of the semiconductor device according to FIG. 3 is shown. Here, two transistor elements T.

Both T2 are connected in a base-grounded manner. The collector of the transistor element Tl and the emitter of the transistor element T2 are electrically connected via the capacitor C2 to the terminal A.
Similarly, the collector of the transistor element T2 and the emitter of the transistor element T1 are connected to the external circuit through the capacitor C1? The collector supply voltage VOO is connected to ground by the two terminals A, , A2.
are applied with the same polarity, and the capacitance C1°C2 is required to prevent the collector supply voltage from being applied directly to the emitter-base junction of the two transistor elements Tl, T2.

In this state, if a signal is input from terminal A, most of the signal will enter transistor element T2 because the output impedance of the common base type transistor is considerably larger than its input impedance.
It is amplified by transistor element T2 and output to the external circuit through terminal Azk.

Conversely, when a signal comes in from terminal A2, most of the signal is transferred to transistor element T, based on the same principle as above.
The signal enters the circuit, is amplified by transistor element T1, and is output to the external circuit through terminal A+. That is, bidirectional signal amplification becomes possible, bidirectional communication can be performed easily at low cost, and transistor elements T1. T
Is it possible to freely change the degree of amplification in both directions by combining the two sizes arbitrarily? hold.

[Brief explanation of drawings]

Fig. 1 is a plan view of a conventional semiconductor device having a unidirectional amplification function, and Fig. 2 shows a bidirectional amplification function realized by an embodiment of the present invention. 3 is a plan view showing an example of a semiconductor device having a third
The figure is an electrical equivalent circuit diagram for fully explaining the operating principle of the semiconductor device proposed by the present invention.
...Emitter region, 3, 3', 3",, insulation f
l, 4.4', 4ζ5,5', 516.6', 6"...
・Contact window, 7, 7', 7"...Base electrode, 8.8'. 8''-...Emitter electrode, 9, 9', 9"...
Collector electrode, 10°10', 10"... Collector area, 11, 13.14... External extraction electrode, 1
2', 12"...capacitive element

Claims (1)

[Claims] first and second transistors whose bases are connected to each other; a first capacitor that connects the collector of the first transistor and the emitter of the second transistor; and the emitter of the first transistor and the second transistor. a second capacitive element fully connected to the collector of the first transistor; a first terminal connected to the collector of the first transistor; a second terminal connected to the collector of the second transistor; The ninth transistor is connected to the common connection base of the third
A semiconductor device having all the characteristics of having terminals and gold.