JPS60193350A - Wire bonding - Google Patents

Wire bonding

Info

Publication number
JPS60193350A
JPS60193350A JP59049822A JP4982284A JPS60193350A JP S60193350 A JPS60193350 A JP S60193350A JP 59049822 A JP59049822 A JP 59049822A JP 4982284 A JP4982284 A JP 4982284A JP S60193350 A JPS60193350 A JP S60193350A
Authority
JP
Japan
Prior art keywords
capillary
ceramic substrate
wedge
substrate
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59049822A
Other languages
Japanese (ja)
Inventor
Masaharu Takahara
高原　正晴
Koichiro Izumi
和泉　孝一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59049822A priority Critical patent/JPS60193350A/en
Publication of JPS60193350A publication Critical patent/JPS60193350A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To contrive to enhance reliability and yield of junction of wire bonding by a method wherein a clamp mechanism to press and fix a ceramic substrate being interlocked with action of a capillary is provided. CONSTITUTION:A press bar 17 is interlocked with a capillary 11. When the capillary 11 descends onto the surface of a ceramic substrate 15, the bar 17 also descends in parallel with the capillary 11 at the same time. However because the bar 17 is placed at the nearer distance than the capillary 11 to the substrate 15, the bar 17 comes in contact with the substrate 15 earlier than the capillary 11. Therefore, by adding load to the bar 17, no gap is generated between a table 16 even when the substrate 15 has a warp, moreover because action as a spring of the substrate 15 is not generated, absorption of load or an ultrasonic vibration is not generated. Accordingly, bonding of a metal wire and an electrode can be attained sufficiently, and reduction of the ultrasonic vibration or load at bonding time can be prevented.

Description

【発明の詳細な説明】 本発明は、ワイアボンディング方法（；おける基板の固
定方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for fixing a substrate in a wire bonding method.

従来、ワイアボンディング方法としては、アルミワイア
を装着したウェッジに超背波、荷重を印加する超音波ボ
ンディング方式（ＵＳＢ）、金属ワイアを装着したキャ
ピラリに超音波荷重および熱を印加するサーモソニック
ボンディング方式（ＴＳＢ）等がある。Conventional wire bonding methods include the ultrasonic bonding method (USB), which applies an ultrasonic wave and load to a wedge fitted with aluminum wire, and the thermosonic bonding method (USB), which applies ultrasonic load and heat to a capillary fitted with metal wire. TSB) etc.

今、従来例について、第１図〜第３図に示されているサ
ーモソニックボンディング方式（ＴＳＢ）による方法に
ついて説明する。Now, as a conventional example, a method using the thermosonic bonding method (TSB) shown in FIGS. 1 to 3 will be described.

第１図及び第２図において、キャピラリ１に装着された
金属ワイア２の下端部２′は、キャピラリ１の下方にあ
るトーチ棒３に臨んでいる。第３図において、キャピラ
リ１の中央部に金属ワイア２が装着されて、金属ワイア
２はキャピラリ１を貫通している。第１図において、テ
ーブル６の上面にセラミック基板５が載置してあり、セ
ラミック基板５の上面左側には、半導体素子４が取付け
である。In FIGS. 1 and 2, the lower end 2' of the metal wire 2 attached to the capillary 1 faces the torch bar 3 below the capillary 1. In FIG. 3, a metal wire 2 is attached to the center of the capillary 1, and the metal wire 2 passes through the capillary 1. In FIG. 1, a ceramic substrate 5 is placed on the top surface of a table 6, and a semiconductor element 4 is attached to the left side of the top surface of the ceramic substrate 5.

そして、１ｓ６図の状態にあるキャピラリ１（又はウェ
ッジ）に、金属ワイア２を貫通して装着したものに、第
２図に示すように、金属ワイア２の下端部２′にトーチ
棒６を臨ませて、このトープ棒６に高電圧を印加して、
高電圧の放電によって、金属ワイア２の下端部２′を溶
融して球状下端部２′を形成する。すなわち、この下端
部２′は、表面張力によりボール状に形成される。その
後、第１図の左側に示すように、キャピラリ１が、半導
体素子４の上面まで降下し、前記金属ワイア２の球状の
下端部が半導体素子４の上面の電極に圧着接合される。Then, as shown in FIG. 2, the torch rod 6 is attached to the lower end 2' of the metal wire 2, which is attached to the capillary 1 (or wedge) in the state shown in FIG. Then, apply a high voltage to this tope rod 6,
The high voltage discharge melts the lower end 2' of the metal wire 2 to form a spherical lower end 2'. That is, this lower end portion 2' is formed into a ball shape due to surface tension. Thereafter, as shown on the left side of FIG. 1, the capillary 1 is lowered to the upper surface of the semiconductor element 4, and the spherical lower end of the metal wire 2 is crimped to the electrode on the upper surface of the semiconductor element 4.

これによって、第１ポンデイングが形成される。As a result, a first ponding is formed.

それから、次の工程において、第１図の右側に示すよう
に、キャピラリ１は、金属ワイア２に装着されているの
で、キャピラリ１は金属ワイア２の上を摺動させられて
、セラミック基板５の上面にある所定の電極上に降下し
、キャピラリ１に超音波振動及び荷重が、又、前記セラ
ミック基板５の下面に固着されているテープ／Ｉ／６に
は、熱が、それぞれ、印加される。それによって、キャ
ピラリ１は、セラミック基板５の上面（二ある所定の電
極上に圧着接合されて、第２ボンデイングが形成される
。そして、更に、第１図の右側に示されているように、
第２ボンデイングの接合面で、金属ワイア２を破断し、
これによりワイアボンディングが完了する。Then, in the next step, as shown on the right side of FIG. Ultrasonic vibration and load are applied to the capillary 1 which falls on a predetermined electrode on the upper surface, and heat is applied to the tape /I/6 fixed to the lower surface of the ceramic substrate 5, respectively. . Thereby, the capillary 1 is crimped and bonded onto the upper surface (two predetermined electrodes) of the ceramic substrate 5, forming a second bonding.As shown on the right side of FIG.
Breaking the metal wire 2 at the joint surface of the second bonding,
This completes wire bonding.

このようなワイアボンディング方法においては、基板５
は真空チャック等によりテーブル６上に固着されている
。しかし、セラミック基板のソリ、異物等により、基板
とテーブルとの間に間隙があると、セラミック基板がバ
ネとして作用し、荷重。In such a wire bonding method, the substrate 5
is fixed on the table 6 using a vacuum chuck or the like. However, if there is a gap between the board and the table due to warping of the ceramic board or foreign objects, the ceramic board will act as a spring, causing a load.

超音波振動を吸収するため、金属ワイアと電極の接合が
十分でなく、歩留、信頼度が低下する欠点がみられた。In order to absorb ultrasonic vibrations, the bonding between the metal wire and the electrode was insufficient, resulting in a decrease in yield and reliability.

そこで１本発明は、キャピラリ、或いは、ウェッジの動
作に連動して、セラミック基板を上から押えつけ、セラ
ミック基板をボンディング装置に用いるテーブルに固着
させること（二より、セラミック基板のバネ作用をなく
シ、信頼性のあるワイアボンディング及び接合が得られ
るようなボンディング装置を提供するものである。Therefore, one aspect of the present invention is to press down the ceramic substrate from above in conjunction with the operation of the capillary or wedge and fix the ceramic substrate to the table used in the bonding device (secondly, to eliminate the spring action of the ceramic substrate The present invention provides a bonding device that enables reliable wire bonding and joining.

本発明の構成は、直径数１０ミクロン程度の金属ワイア
をウェッジ、或いは、キャピラリに装着させて、該金属
ワイアの下端部を球状に形成し、前記ウェッジ、或いは
、キャピラリを降下させて、この球状の下端部を、セラ
ミック基板の上面に固着した半導体素子上面の電極に接
合させて第１ボンデイングを形成させ、次に前記ウェッ
ジ或いは、キャピラリを金属ワイア上に摺動させて、前
記セラミック基板の上面の所定の電極ζ二位置させ、前
記ウェッジ或いは、キャピラリに超音波振動及び荷重を
、前記セラミック基板の下面に固着したテーブルに熱を
、それぞれ印加させて、前記ウェッジ−或いは−キャビ
ラリをセラミック基板の上面の所定の電極に溶着接合さ
せて、第２ボンデイングを形成させるよう１二するワイ
アボンディング方法ζ；おいて、前記ウェッジ、或いは
、キャピラリの降下する動作に連動して、前記セラミッ
ク基板を押えて固定させるためのクランプ機構を、セラ
ミック基板の上面に降下させてセラミック基板を固定さ
せることを特徴とするものである。The structure of the present invention is to attach a metal wire with a diameter of about 10 microns to a wedge or a capillary, form the lower end of the metal wire into a spherical shape, and lower the wedge or capillary to form this spherical shape. The lower end of the semiconductor element is bonded to the electrode on the upper surface of the semiconductor element fixed to the upper surface of the ceramic substrate to form a first bonding, and then the wedge or capillary is slid onto the metal wire to connect the upper surface of the ceramic substrate. The wedge or capillary is placed at a predetermined electrode ζ2, and ultrasonic vibration and load are applied to the wedge or capillary, and heat is applied to a table fixed to the bottom surface of the ceramic substrate, so that the wedge or capillary is connected to the ceramic substrate. A wire bonding method ζ in which the ceramic substrate is welded to a predetermined electrode on the upper surface to form a second bond; A clamp mechanism for fixing the ceramic substrate is lowered onto the upper surface of the ceramic substrate to fix the ceramic substrate.

次に、本発明の実施例ζ：ついて、図面を参照して説明
する。第５図は本発明によるワイアボンディング方法に
よってなされているボンディング接合中のキャピラリ位
置を示すものである。１１はキャピラリであり、セラミ
ック基板の表面に圧着接合しである。１４はセラミック
基板１５の表面の左側口接合しである半導体素子であり
、半導体素子１４上の電極には、金属ワイア１２０ボー
ル状端部１２′が接合している。この金属ワイア１２は
わん曲し【キャピラリ１１の底部から、キャピラリ１１
の中央部分を貫通して装着されている。Next, embodiment ζ of the present invention will be described with reference to the drawings. FIG. 5 shows the position of the capillary during bonding made by the wire bonding method according to the present invention. 11 is a capillary, which is pressure-bonded to the surface of the ceramic substrate. Reference numeral 14 denotes a semiconductor element which is bonded to the left side of the surface of the ceramic substrate 15, and a ball-shaped end 12' of a metal wire 120 is bonded to an electrode on the semiconductor element 14. This metal wire 12 is curved [from the bottom of the capillary 11 to
It is installed through the central part of the

セラミック基板１５の下面には、テーブル１６が固着さ
れている。セラミック基板１５の上面右側　′には、押
え棒１７が設けられている。この押え棒１７は、セラミ
ック基板を上から押圧して固定するためのクランプ機構
の一実施例である。A table 16 is fixed to the lower surface of the ceramic substrate 15. A presser bar 17 is provided on the right side of the upper surface of the ceramic substrate 15 . This presser bar 17 is an example of a clamp mechanism for pressing and fixing the ceramic substrate from above.

第４図は、ボンディング方法によって、金属ワイア１２
の下端部を半導体素子１４の所定の電極に接合して第１
ボンデイングを形成して、第２ボンデイングの直前のキ
ャピラリの位置を示している。FIG. 4 shows how the metal wire 12 is bonded by the bonding method.
The lower end of the semiconductor element 14 is joined to a predetermined electrode of the first
A bond is formed to show the position of the capillary just before the second bond.

キャピラリ１１と前記押え棒１７はセラミック基［１５
の右側上方にある。そして、キャピラリ１１は押え棒１
７より内側にある。セラミック基［１５の上面左側には
、半導体素子１４が固着されていて、半導体１４の上面
には、第５図と同様に、金属ワイア１２のボール状の下
端部１２′が接合されている。そして、押え棒１７は、
セラミック基板に対して、その上方において、キャピラ
リ１１よりも近い距離にある。第４図で、押え棒１７は
キャピラリ１１と連動するようにしである。押え棒１７
は、セラミック基板１５の上方）二ある。The capillary 11 and the presser rod 17 are made of ceramic base [15
It's on the upper right side. And the capillary 11 is the presser rod 1
It is inside from 7. A semiconductor element 14 is fixed to the left side of the upper surface of the ceramic base [15], and a ball-shaped lower end 12' of a metal wire 12 is bonded to the upper surface of the semiconductor 14, as in FIG. And the presser bar 17 is
It is located above the ceramic substrate at a closer distance than the capillary 11. In FIG. 4, the presser bar 17 is designed to interlock with the capillary 11. Presser bar 17
are located above the ceramic substrate 15).

そして、キャピラリ１１がセラミック基板１５の表面上
に降下すると同時に、キャピラリ１１と平行に押え棒１
７も降下する。しかしながら、押え棒１７はセラミック
基板１５に対して、キャピラリ１１より近い距離にある
から、押え棒１７は、キャピラリ１１よりも光書；セラ
ミック基板１５に接触する。ｆｓ５図に示すように、押
え棒１７はセラミック基板１５を圧着し接合する。それ
故に、押え棒１７に荷重を附加することにより、セラミ
ック基板１５は十分（二抑えつけられており、セラミッ
ク基板１５にソリがあっても、テーブル１６との間１；
間隙が生じることがなく、また、セラミック基板１５が
バネとして作用することがないので、荷重、超音波振動
を吸収することがなく、金属ワイアと電極との接合が十
分であり、ボンディング時の超音波振動、荷重の低下を
防止できる。Then, at the same time as the capillary 11 descends onto the surface of the ceramic substrate 15, the presser bar 1 is placed parallel to the capillary 11.
7 also descends. However, since the presser rod 17 is closer to the ceramic substrate 15 than the capillary 11, the presser rod 17 comes into contact with the ceramic substrate 15 more than the capillary 11 does. As shown in Figure fs5, the presser rod 17 presses and joins the ceramic substrate 15. Therefore, by applying a load to the presser bar 17, the ceramic substrate 15 is sufficiently held down, and even if the ceramic substrate 15 warps, there is a gap between it and the table 16.
Since no gaps are created and the ceramic substrate 15 does not act as a spring, it does not absorb loads or ultrasonic vibrations, and the metal wires and electrodes are sufficiently bonded to each other. It can prevent sonic vibration and load drop.

ここで、押え棒１７の位置は、第４図の第１ポンデイン
グの位置から、第５図のｓ２ポンディングの位置に、キ
ャピラリ１１が移動するような進行方向にあり、押え棒
１７はセラミック基板１５に対して、キャピラリ１１よ
りも近い距離（二あり。Here, the position of the presser bar 17 is in the advancing direction such that the capillary 11 moves from the first pounding position in FIG. 4 to the s2 pounding position in FIG. 15, the distance is closer than the capillary 11 (there are two).

また、押え棒１７はセラミック基１ｉ１５１：対して、
キャビツリ１１よりも外側で、かつ、キャピラリ１１の
近傍に配置すれば、半導体素子１４．或１，１は、他の
ワイアボンディングを傷つけることなく、セラミック基
板１５を押えつけることカーできる。In addition, the presser bar 17 has a ceramic base 1i151:
If placed outside the cavity 11 and near the capillary 11, the semiconductor element 14. Alternatively, the wires 1 and 1 can be pressed against the ceramic substrate 15 without damaging other wire bondings.

尚、本発明の実施例は、キャピラリを用すまたサーモン
ニツクワイアボンデイング方式（＝つ（、Ｘて説明した
が、キャピラリの代りにウェッジを用Ｖ）だ超音波ワイ
アボンディング方式等、他の方式でも同様の効果が得ら
れることは明らかである。The embodiments of the present invention may also be applied to other methods such as the salmon wire bonding method using a capillary, the ultrasonic wire bonding method, etc. However, it is clear that similar effects can be obtained.

本発明は、以上説明したように、キャピラリ、或いは、
連動してセラミック基板を押え固定する、例えば、押え
棒のような、クランプ機構を有することで、ワイアボン
ディングの接合４８頼性および歩留を向上させる効果が
ある。As explained above, the present invention is directed to a capillary or
Providing a clamp mechanism, such as a presser bar, that presses and fixes the ceramic substrate in conjunction with each other has the effect of improving the reliability of the wire bonding bonding 48 and the yield.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、従来例のサーモソニックワイアボンディング
装置、第２図は従来のサーモソニックワイアポンディン
グ装置におけるキャピラリとトー側面図、第４図及び第
５図は、本発明の一実施例を示す側面図。 １；キャピラリ、　１１；キャピラリー、２；金属ワイ
ア、　１２；金属ワイア、６；トーチ棒、　１４；半導
体素子、 ４；半導体素子、　１５；セラミック基板、５；セラミ
ック基板、１６；テーブル、６；テーブル、　１７；押
え棒、 ２′；金属ワイアの下端部。 第１図 第２図 第　３　因 第５図FIG. 1 shows a conventional thermosonic wire bonding device, FIG. 2 shows a side view of a capillary and toe in a conventional thermosonic wire bonding device, and FIGS. 4 and 5 show an embodiment of the present invention. Side view. 1; Capillary, 11; Capillary, 2; Metal wire, 12; Metal wire, 6; Torch rod, 14; Semiconductor element, 4; Semiconductor element, 15; Ceramic substrate, 5; Ceramic substrate, 16; Table, 6; Table , 17; presser bar, 2'; lower end of metal wire. Figure 1 Figure 2 Figure 3 Cause Figure 5

Claims (1)

【特許請求の範囲】[Claims] 直径数１０ミクロン程度の金属ワイアをウェッジ、或い
はキャピラリに装着させて、該金属ワイアの下端部を球
状に形成し、前記ウェッジ或いはキャピラリを降下させ
て、この球状の下端部を、セラミック基板の上面に固着
した半導体素子上面の電極に接合させて第１ボンデイン
グを形成させ、次に前記ウェッジ或いは、キャピラリを
金属ワイア上に摺動させて、前記セラミック基板の上面
の所定の電極に位置させ、前記ウエツジ或いは、キャピ
ラリに超音波振動及び荷重を、前記セラミック基板の下
面に固着したテーブルに熱を、それぞれ印加させて、前
記ウェッジ或いは、キャピラリをセラミック基板の上面
の所定の電極礪二熔着接合させて、第２ボンデイングを
形成させるようにするワイアボンディング方法において
、前記ウェッジ、或いは、キャピラリの降下する動作に
連動して、前記セラミック基板を押えて固定させるため
のクランプ機構を、セラミック基板の上面に降下させて
、セラミック基板を固定させることを特徴とするワイア
ボンディング方法。A metal wire with a diameter of about 10 microns is attached to a wedge or a capillary, the lower end of the metal wire is formed into a spherical shape, and the wedge or capillary is lowered to connect the spherical lower end to the upper surface of the ceramic substrate. to form a first bonding to an electrode on the upper surface of the semiconductor element fixed to the ceramic substrate, and then slide the wedge or capillary onto the metal wire to position it at a predetermined electrode on the upper surface of the ceramic substrate; The wedge or capillary is welded to a predetermined electrode on the upper surface of the ceramic substrate by applying ultrasonic vibration and load to the wedge or capillary and applying heat to a table fixed to the lower surface of the ceramic substrate. In the wire bonding method, a clamp mechanism is provided on the upper surface of the ceramic substrate for holding and fixing the ceramic substrate in conjunction with the downward movement of the wedge or the capillary. A wire bonding method characterized by lowering and fixing a ceramic substrate.
JP59049822A 1984-03-15 1984-03-15 Wire bonding Pending JPS60193350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59049822A JPS60193350A (en) 1984-03-15 1984-03-15 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59049822A JPS60193350A (en) 1984-03-15 1984-03-15 Wire bonding

Publications (1)

Publication Number Publication Date
JPS60193350A true JPS60193350A (en) 1985-10-01

Family

ID=12841792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59049822A Pending JPS60193350A (en) 1984-03-15 1984-03-15 Wire bonding

Country Status (1)

Country Link
JP (1) JPS60193350A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060841A (en) * 1985-12-25 1991-10-29 Hitachi, Ltd. wire bonding method and apparatus and method of producing semiconductor device by use of wire bonding apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060841A (en) * 1985-12-25 1991-10-29 Hitachi, Ltd. wire bonding method and apparatus and method of producing semiconductor device by use of wire bonding apparatus

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