JPS5775476A - Reluctance effect element - Google Patents
Reluctance effect elementInfo
- Publication number
- JPS5775476A JPS5775476A JP55151805A JP15180580A JPS5775476A JP S5775476 A JPS5775476 A JP S5775476A JP 55151805 A JP55151805 A JP 55151805A JP 15180580 A JP15180580 A JP 15180580A JP S5775476 A JPS5775476 A JP S5775476A
- Authority
- JP
- Japan
- Prior art keywords
- stripe
- section
- substance
- effect element
- electric resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
PURPOSE:To increase the regenerative sensitivity of a reluctance effect element and to obtain a high-performance reluctance effect element having broad usage by a method wherein section consisting of a high-electric resistance and high-magnetic permeability magnetic substance is contacted with the side end of a reluctance effect stripe consisting of a magnetic substance thin film. CONSTITUTION:A section 7 consisting of a high-electric resistance and high-magnetic permeability magnetic substance with a width of W1 and a thickness of (t) is formed at one end of a nonmagnetic substance 6 and an oblong magnetoresistance effect (MR) stripe 1 with a width of W and consisting of a ferromagnetic substance thin film is provided on the substance. The MR stripe is formed in nearly parallel with the section 7 so that the MR stipe may directly contact with the section at the side end of the MR stripe. The electric resistance value of the section 7 is made a value of one figure or more higher than that of the MR stripe 1 to guide the magnetic flux in the X-direction against the MR stripe 1 by the section 7 and the diamagnetic field of the MR stripe 1 is reduced. And the regenerative sensitivity of the magnetoresistance effect element is increased to adapt to broad usage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151805A JPS5775476A (en) | 1980-10-29 | 1980-10-29 | Reluctance effect element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151805A JPS5775476A (en) | 1980-10-29 | 1980-10-29 | Reluctance effect element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5775476A true JPS5775476A (en) | 1982-05-12 |
Family
ID=15526682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55151805A Pending JPS5775476A (en) | 1980-10-29 | 1980-10-29 | Reluctance effect element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5775476A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587509A (en) * | 1983-07-06 | 1986-05-06 | Standard Telephones & Cables, Plc | Hall effect device with overlapping flux concentrators |
-
1980
- 1980-10-29 JP JP55151805A patent/JPS5775476A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587509A (en) * | 1983-07-06 | 1986-05-06 | Standard Telephones & Cables, Plc | Hall effect device with overlapping flux concentrators |
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