JPS5724544A - Detection for insulation film defect of semiconductor element - Google Patents

Detection for insulation film defect of semiconductor element

Info

Publication number
JPS5724544A
JPS5724544A JP9868280A JP9868280A JPS5724544A JP S5724544 A JPS5724544 A JP S5724544A JP 9868280 A JP9868280 A JP 9868280A JP 9868280 A JP9868280 A JP 9868280A JP S5724544 A JPS5724544 A JP S5724544A
Authority
JP
Japan
Prior art keywords
electrolytic solution
electrode
ammeter
capillary tube
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9868280A
Other languages
Japanese (ja)
Inventor
Yasuhisa Oana
Norio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9868280A priority Critical patent/JPS5724544A/en
Publication of JPS5724544A publication Critical patent/JPS5724544A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect the defect of the insulation film by measuring the intensity of electric current between the capillary electrode and the circuit after the electrolytic solution from the tip of a capillary tube is contacted with the surface of the semiconductor element. CONSTITUTION:The diameter of the capillary tube and the viscosity, surface tension or gravity of an electrolytic solution 8 are so designed that the drop of solution from the tip of the capillary tube 9 hangs down about 40mum. An electrode 10 is inserted into the electrolytic solution and then electricity is turned on with one end of a battery 12 connected to an ammeter 11 through electrode 10, an the other to a silicone substrate 1 and an aluminium electrode 2. The spread of electrolytic solution should be about 200-300mum in area and the source voltage 5V. In this case, the indication on the ammeter of a perfectly passivated film 4 is zero, and if there are any cracks 5, electricity escapes from it and the indication of the ammeter 11 swings therewith. By this means, a fine defect of the passivated film can be detected in a very short time.
JP9868280A 1980-07-21 1980-07-21 Detection for insulation film defect of semiconductor element Pending JPS5724544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9868280A JPS5724544A (en) 1980-07-21 1980-07-21 Detection for insulation film defect of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9868280A JPS5724544A (en) 1980-07-21 1980-07-21 Detection for insulation film defect of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5724544A true JPS5724544A (en) 1982-02-09

Family

ID=14226273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9868280A Pending JPS5724544A (en) 1980-07-21 1980-07-21 Detection for insulation film defect of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5724544A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933843A (en) * 1982-08-20 1984-02-23 Hitachi Ltd Inspection of insulating film on surface of semiconductor element
US4510674A (en) * 1982-10-21 1985-04-16 Sovonics Solar Systems System for eliminating short circuit current paths in photovoltaic devices
JP2006098362A (en) * 2004-09-30 2006-04-13 Kobe Steel Ltd Fault detection method for insulating film
JP2012525694A (en) * 2009-04-30 2012-10-22 ウニベルジテ・デュ・ルクセンブルク Electrical and optoelectric properties of large area semiconductor devices.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933843A (en) * 1982-08-20 1984-02-23 Hitachi Ltd Inspection of insulating film on surface of semiconductor element
US4510674A (en) * 1982-10-21 1985-04-16 Sovonics Solar Systems System for eliminating short circuit current paths in photovoltaic devices
JP2006098362A (en) * 2004-09-30 2006-04-13 Kobe Steel Ltd Fault detection method for insulating film
JP2012525694A (en) * 2009-04-30 2012-10-22 ウニベルジテ・デュ・ルクセンブルク Electrical and optoelectric properties of large area semiconductor devices.
US9245810B2 (en) 2009-04-30 2016-01-26 Universite Du Luxembourg Electrical and opto-electrical characterization of large-area semiconductor devices

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