JPS57211144A - Formation of micropattern - Google Patents

Formation of micropattern

Info

Publication number
JPS57211144A
JPS57211144A JP9591781A JP9591781A JPS57211144A JP S57211144 A JPS57211144 A JP S57211144A JP 9591781 A JP9591781 A JP 9591781A JP 9591781 A JP9591781 A JP 9591781A JP S57211144 A JPS57211144 A JP S57211144A
Authority
JP
Japan
Prior art keywords
film
resist
pattern
rays
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9591781A
Other languages
Japanese (ja)
Inventor
Ken Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP9591781A priority Critical patent/JPS57211144A/en
Publication of JPS57211144A publication Critical patent/JPS57211144A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To facilitate dry patterning of a resist film by adding a specified agent to the resist. CONSTITUTION:A photosensitive resist layer 3 composed of a mixture of polyacrylate or the like radiation-sensitive resin and at least one of a silylating agent and an acylating agent, and benzoin or its derivative is provided on the film 2 of silicon oxidized with heat formed on a semiconductor substrate 1. The resist film 3 is irradiated with far UV rays 4 in accordance with a prescribed pattern A resist film pattern 3a is obtained by subjecting the substrate 1 to an oxygen plasma and removing the parts of the film 3 not irradiated with the rays 4. Then, the unnecessary parts of the silicon oxide film 2 using the film 3a as a protective film are removed, and further, the film 3a is removed to obtain the desired pattern.
JP9591781A 1981-06-23 1981-06-23 Formation of micropattern Pending JPS57211144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9591781A JPS57211144A (en) 1981-06-23 1981-06-23 Formation of micropattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9591781A JPS57211144A (en) 1981-06-23 1981-06-23 Formation of micropattern

Publications (1)

Publication Number Publication Date
JPS57211144A true JPS57211144A (en) 1982-12-24

Family

ID=14150623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9591781A Pending JPS57211144A (en) 1981-06-23 1981-06-23 Formation of micropattern

Country Status (1)

Country Link
JP (1) JPS57211144A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248035A (en) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd Photoresist composition having improved adhesion property
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JPH03154062A (en) * 1989-11-13 1991-07-02 Fujitsu Ltd Formation of resist pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JPS61248035A (en) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd Photoresist composition having improved adhesion property
JPH03154062A (en) * 1989-11-13 1991-07-02 Fujitsu Ltd Formation of resist pattern

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