JPS57200569A - Apparatus for treating surface with gas decomposed by light - Google Patents

Apparatus for treating surface with gas decomposed by light

Info

Publication number
JPS57200569A
JPS57200569A JP8658781A JP8658781A JPS57200569A JP S57200569 A JPS57200569 A JP S57200569A JP 8658781 A JP8658781 A JP 8658781A JP 8658781 A JP8658781 A JP 8658781A JP S57200569 A JPS57200569 A JP S57200569A
Authority
JP
Japan
Prior art keywords
substrate
chamber
pressure
radicals
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8658781A
Other languages
Japanese (ja)
Inventor
Yukinori Kuroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8658781A priority Critical patent/JPS57200569A/en
Publication of JPS57200569A publication Critical patent/JPS57200569A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To enable a surface treatment to be highly precisely worked without damaging the substrate surface, by decomposing an etching gas by a light, and jetting the resulting radicals onto the substrate in a sample chamber wherein a low pressure is kept.
CONSTITUTION: An etching gas is introduced from an introducing section 11 into a pre-chamber 12 where it is decomposed by a light beam 16 into radicals which are then introduced via a slit 13 into the treatment chamber 14. The pressure in the pre-chamber 12 is kept at about 2 Torr, whereas the pressure in the treatment chamber 14 is kept at about 6×10-4 Torr by an exhaustion system 15. In the treatment chamber 14, the substrate 18 is moved in a direction normal to the path of the radicals by a conveyor 17 with the distance between the slit 13 and the substrate 18 being about 20mm. As the pressure in the pre-chamber 12 is relatively high whereas the pressure in the treatment chamber 14 is low, the produced radicals are jetted through the slit 13 against the substrate 18 to etch the whole surface of the substrate 18 moved horizontally.
COPYRIGHT: (C)1982,JPO&Japio
JP8658781A 1981-06-05 1981-06-05 Apparatus for treating surface with gas decomposed by light Pending JPS57200569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8658781A JPS57200569A (en) 1981-06-05 1981-06-05 Apparatus for treating surface with gas decomposed by light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8658781A JPS57200569A (en) 1981-06-05 1981-06-05 Apparatus for treating surface with gas decomposed by light

Publications (1)

Publication Number Publication Date
JPS57200569A true JPS57200569A (en) 1982-12-08

Family

ID=13891136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8658781A Pending JPS57200569A (en) 1981-06-05 1981-06-05 Apparatus for treating surface with gas decomposed by light

Country Status (1)

Country Link
JP (1) JPS57200569A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819479A (en) * 1981-07-29 1983-02-04 Matsushita Electric Ind Co Ltd Method and device for etching
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5716495A (en) * 1994-06-14 1998-02-10 Fsi International Cleaning method
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US6663792B2 (en) 1997-10-21 2003-12-16 Fsi International, Inc. Equipment for UV wafer heating and photochemistry

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819479A (en) * 1981-07-29 1983-02-04 Matsushita Electric Ind Co Ltd Method and device for etching
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5716495A (en) * 1994-06-14 1998-02-10 Fsi International Cleaning method
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US6663792B2 (en) 1997-10-21 2003-12-16 Fsi International, Inc. Equipment for UV wafer heating and photochemistry

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