JPS57153478A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS57153478A
JPS57153478A JP56038657A JP3865781A JPS57153478A JP S57153478 A JPS57153478 A JP S57153478A JP 56038657 A JP56038657 A JP 56038657A JP 3865781 A JP3865781 A JP 3865781A JP S57153478 A JPS57153478 A JP S57153478A
Authority
JP
Japan
Prior art keywords
cell
crystal
transparent
conversion efficiency
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56038657A
Other languages
Japanese (ja)
Inventor
Kazuhiko Sato
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56038657A priority Critical patent/JPS57153478A/en
Publication of JPS57153478A publication Critical patent/JPS57153478A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve conversion efficiency increasing usable electric power by separating each solar cell with a transparent insulation film and laminating it with transparent conductive films between, and thereby separately taking out generated electricity. CONSTITUTION:Solar cells a, b, ... comprising a p type non-crystal Si 1, non- additive non-crystal Si 2 and an n type non-crystal Si 3 are formed on a stainless steel substrate 10. Each cell is separated by a transparent insulation film 6 of SiO and electricity is taken out via an Al electrode from each transparent electrode 4. Load resistors are connected to the cells a, b, .... By this construction the optimum operating point of each cell can be selected and the power taken out is higher than that of a tandem cell. Overall conversion efficiency is improved and the forming of the elements becomes easier as the number of lamination increases.
JP56038657A 1981-03-19 1981-03-19 Photoelectric conversion device Pending JPS57153478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56038657A JPS57153478A (en) 1981-03-19 1981-03-19 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038657A JPS57153478A (en) 1981-03-19 1981-03-19 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPS57153478A true JPS57153478A (en) 1982-09-22

Family

ID=12531324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038657A Pending JPS57153478A (en) 1981-03-19 1981-03-19 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS57153478A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250681A (en) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Random multilayer semiconductor structure
JPH01128476A (en) * 1987-11-12 1989-05-22 Sanyo Electric Co Ltd Laminated layer type photoelectromotive device
US5206523A (en) * 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
US6369405B1 (en) * 1989-12-07 2002-04-09 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Silicon quantum wires
US7087832B2 (en) * 2002-09-05 2006-08-08 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7126053B2 (en) 2002-06-19 2006-10-24 Canon Kabushiki Kaisha Power generation system and power generation apparatus
USRE39967E1 (en) * 1998-10-09 2008-01-01 The Trustees Of Columbia University In The City Of New York Solid-state photoelectric device
JP2009510719A (en) * 2005-09-26 2009-03-12 インペリアル イノベーションズ リミテッド Photovoltaic cell
EP2122688A1 (en) * 2007-03-06 2009-11-25 Sunlight Photonics Inc. Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
WO2010100947A1 (en) * 2009-03-05 2010-09-10 株式会社アルバック Solar cell and method for manufacturing solar cell
US8110428B2 (en) 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US8187906B2 (en) 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
US8343794B2 (en) 2008-02-21 2013-01-01 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US8835748B2 (en) 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
US10211353B2 (en) 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250681A (en) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Random multilayer semiconductor structure
JPH01128476A (en) * 1987-11-12 1989-05-22 Sanyo Electric Co Ltd Laminated layer type photoelectromotive device
US6369405B1 (en) * 1989-12-07 2002-04-09 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Silicon quantum wires
US5206523A (en) * 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
USRE39967E1 (en) * 1998-10-09 2008-01-01 The Trustees Of Columbia University In The City Of New York Solid-state photoelectric device
US7126053B2 (en) 2002-06-19 2006-10-24 Canon Kabushiki Kaisha Power generation system and power generation apparatus
US7750235B2 (en) 2002-09-05 2010-07-06 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7087832B2 (en) * 2002-09-05 2006-08-08 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
JP2009510719A (en) * 2005-09-26 2009-03-12 インペリアル イノベーションズ リミテッド Photovoltaic cell
EP2122688A1 (en) * 2007-03-06 2009-11-25 Sunlight Photonics Inc. Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
EP2122688A4 (en) * 2007-03-06 2012-12-19 Sunlight Photonics Inc Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
US10043929B1 (en) 2007-03-06 2018-08-07 Sunlight Photonics Inc. Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
US8343794B2 (en) 2008-02-21 2013-01-01 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US8187906B2 (en) 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
US10211353B2 (en) 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules
US8110428B2 (en) 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US8835748B2 (en) 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
US9087948B1 (en) 2009-01-06 2015-07-21 Sunlight Photonics Inc. Manufacturing method of multi-junction PV modules
WO2010100947A1 (en) * 2009-03-05 2010-09-10 株式会社アルバック Solar cell and method for manufacturing solar cell

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