JPS57150214A - Surface wave device - Google Patents
Surface wave deviceInfo
- Publication number
- JPS57150214A JPS57150214A JP3503281A JP3503281A JPS57150214A JP S57150214 A JPS57150214 A JP S57150214A JP 3503281 A JP3503281 A JP 3503281A JP 3503281 A JP3503281 A JP 3503281A JP S57150214 A JPS57150214 A JP S57150214A
- Authority
- JP
- Japan
- Prior art keywords
- wave
- speed
- transversal
- transducer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To easily realize suppression of an undesired wave of an SH wave type surface wave (love wave, B-G wave) device, by attaching a metallic film having a speed of a transversal wave smaller than a speed of a transversal wave of a piezoelectric substrate between an acoustical absorbent and a transducer. CONSTITUTION:An electrode film 40 is attached between a transducer 20 and and an acoustical absorbent 30, which are provided on a piezoelectric substrate 10. Above all, in case of a love wave device, as for an electrode material for constituting the transducer 20, a material having a speed of a transversal wave smaller than a speed of a transversal wave of the substrate is necessary, but as a result of attaching the same electrode film 40 as this material, suppression of an undesired wave by the acoustical absorbent has proved to be effective. On the other hand, in case of a B-G wave, it is different from a wave, its electrode material is not limited essentially, and any semiconductive film can be used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3503281A JPS57150214A (en) | 1981-03-11 | 1981-03-11 | Surface wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3503281A JPS57150214A (en) | 1981-03-11 | 1981-03-11 | Surface wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57150214A true JPS57150214A (en) | 1982-09-17 |
Family
ID=12430714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3503281A Pending JPS57150214A (en) | 1981-03-11 | 1981-03-11 | Surface wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57150214A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63260213A (en) * | 1986-09-12 | 1988-10-27 | Hiroshi Shimizu | Resonator using high coupling love wave type saw substrate |
-
1981
- 1981-03-11 JP JP3503281A patent/JPS57150214A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63260213A (en) * | 1986-09-12 | 1988-10-27 | Hiroshi Shimizu | Resonator using high coupling love wave type saw substrate |
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