JPS5414155A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5414155A JPS5414155A JP8029377A JP8029377A JPS5414155A JP S5414155 A JPS5414155 A JP S5414155A JP 8029377 A JP8029377 A JP 8029377A JP 8029377 A JP8029377 A JP 8029377A JP S5414155 A JPS5414155 A JP S5414155A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- manufacture
- semiconductor device
- fixed substrate
- arrived
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE: To prevent the dicing knife from being arrived at the hard fixed substrate and the swelling of bonding materials at the bonding, by using bonding material immersing the bonding agent on porous and thick paper layer when the semiconductor wafer and the fixed substrate are bonded together.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8029377A JPS5414155A (en) | 1977-07-04 | 1977-07-04 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8029377A JPS5414155A (en) | 1977-07-04 | 1977-07-04 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5414155A true JPS5414155A (en) | 1979-02-02 |
Family
ID=13714215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8029377A Pending JPS5414155A (en) | 1977-07-04 | 1977-07-04 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5414155A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51133231A (en) * | 1975-05-02 | 1976-11-18 | Basf Ag | Process for manufacturing nnalkyll or nnalkenyllcarbamic acid ester |
JPS58100443A (en) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Cutting of wafer |
JPS61112345A (en) * | 1984-11-07 | 1986-05-30 | Toshiba Corp | Manufacture of semiconductor device |
US6184109B1 (en) | 1997-07-23 | 2001-02-06 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
US6294439B1 (en) | 1997-07-23 | 2001-09-25 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
US6337258B1 (en) | 1999-07-22 | 2002-01-08 | Kabushiki Kaisha Toshiba | Method of dividing a wafer |
-
1977
- 1977-07-04 JP JP8029377A patent/JPS5414155A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51133231A (en) * | 1975-05-02 | 1976-11-18 | Basf Ag | Process for manufacturing nnalkyll or nnalkenyllcarbamic acid ester |
JPS58100443A (en) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Cutting of wafer |
JPS61112345A (en) * | 1984-11-07 | 1986-05-30 | Toshiba Corp | Manufacture of semiconductor device |
JPH0554262B2 (en) * | 1984-11-07 | 1993-08-12 | Tokyo Shibaura Electric Co | |
US6184109B1 (en) | 1997-07-23 | 2001-02-06 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
US6294439B1 (en) | 1997-07-23 | 2001-09-25 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
US6337258B1 (en) | 1999-07-22 | 2002-01-08 | Kabushiki Kaisha Toshiba | Method of dividing a wafer |
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