JPS57135745A - Method of etching thin films of ceric oxide - Google Patents

Method of etching thin films of ceric oxide

Info

Publication number
JPS57135745A
JPS57135745A JP1874281A JP1874281A JPS57135745A JP S57135745 A JPS57135745 A JP S57135745A JP 1874281 A JP1874281 A JP 1874281A JP 1874281 A JP1874281 A JP 1874281A JP S57135745 A JPS57135745 A JP S57135745A
Authority
JP
Japan
Prior art keywords
etching
ceric oxide
nitric acid
thin film
dipped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1874281A
Other languages
Japanese (ja)
Inventor
Hiroshi Yamazoe
Isao Oota
Mamoru Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1874281A priority Critical patent/JPS57135745A/en
Publication of JPS57135745A publication Critical patent/JPS57135745A/en
Pending legal-status Critical Current

Links

Landscapes

  • Surface Treatment Of Glass (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE: A desired pattern is formed on a thin film of ceric oxide, dipped in a solution mixture of hydrogen chloride and hydrogen peroxide, then in nitric acid and washed with water to effect fine processing into a desired shape at a proper etching speed.
CONSTITUTION: An etching pattern is formed on a ceric oxide thin film supported on the base plate by use of an organic photoresist. Then, etching is effected by dipping it into a mixture of aqueous hydrogen chloride and aqueous hydrogen peroxide to remove almost all the thin film. Then, the product is dipped in nitric acid or fuming nitric acid to change the film rapidly and remove it and simultaneously the organic resist film also is eliminated completely. Then, washing is conducted with a large quantity of water rapidly to complete the etching.
COPYRIGHT: (C)1982,JPO&Japio
JP1874281A 1981-02-09 1981-02-09 Method of etching thin films of ceric oxide Pending JPS57135745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1874281A JPS57135745A (en) 1981-02-09 1981-02-09 Method of etching thin films of ceric oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1874281A JPS57135745A (en) 1981-02-09 1981-02-09 Method of etching thin films of ceric oxide

Publications (1)

Publication Number Publication Date
JPS57135745A true JPS57135745A (en) 1982-08-21

Family

ID=11980103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1874281A Pending JPS57135745A (en) 1981-02-09 1981-02-09 Method of etching thin films of ceric oxide

Country Status (1)

Country Link
JP (1) JPS57135745A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913626A (en) * 1982-07-13 1984-01-24 Nissha Printing Co Ltd Manufacture of substrate having metallic oxide film
CN108473367A (en) * 2016-01-20 2018-08-31 华为技术有限公司 A kind of coated glass and preparation method thereof with viewfinder area

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913626A (en) * 1982-07-13 1984-01-24 Nissha Printing Co Ltd Manufacture of substrate having metallic oxide film
JPH0240611B2 (en) * 1982-07-13 1990-09-12 Nissha Printing
CN108473367A (en) * 2016-01-20 2018-08-31 华为技术有限公司 A kind of coated glass and preparation method thereof with viewfinder area
CN108473367B (en) * 2016-01-20 2020-11-03 华为技术有限公司 Coated glass with window area and preparation method thereof

Similar Documents

Publication Publication Date Title
JPS5548935A (en) Forming of electrode pattern
JPS5277111A (en) Detergent composition for bath room
JPS53112065A (en) Removing method of high molecular compound
JPS57135745A (en) Method of etching thin films of ceric oxide
JPS5494881A (en) Exposure method
JPS649618A (en) Pattern formation
JPS52116174A (en) Manufacture of semiconductor device
JPS5362474A (en) Cleaning method of metal photo mask
JPS5376754A (en) Resist removing method
JPS5232671A (en) Manufacturing process of semiconductor device
JPS5440542A (en) Manufacture of elastic surface-wave device
JPS53101975A (en) Treating method of semiconductor substrates
JPS5569266A (en) Selective adhering method of metal
JPS5235180A (en) Process for the production of an antistatic agent
JPS5359368A (en) Plasma etching
JPS522275A (en) Device of forming semiconductor substrates
JPS5264880A (en) Formation of patterns of thin mo films
JPS5432068A (en) Manufacture of semiconductor device
JPS5544765A (en) Manufacture of semiconductor
JPS5244571A (en) Method of forming fine pattern
JPS5626434A (en) Forming method for pattern of semiconductor substrate
JPS5254379A (en) Method of registering front and rear patterns
JPS5267273A (en) Formation of through-hole onto semiconductor substrate
JPS5210680A (en) Method of manufacturing photo-mask for photo etching
JPS52155055A (en) Production of semiconductor device