JPS5691460A - Manufacturing of dispersion layer resistor - Google Patents
Manufacturing of dispersion layer resistorInfo
- Publication number
- JPS5691460A JPS5691460A JP16870279A JP16870279A JPS5691460A JP S5691460 A JPS5691460 A JP S5691460A JP 16870279 A JP16870279 A JP 16870279A JP 16870279 A JP16870279 A JP 16870279A JP S5691460 A JPS5691460 A JP S5691460A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- dispersion layer
- take
- processing
- out electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006185 dispersion Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000010355 oscillation Effects 0.000 abstract 3
- 239000010979 ruby Substances 0.000 abstract 2
- 229910001750 ruby Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
PURPOSE:To reduce fluctuation of resistance value, by applying beam onto a resistor at the time when processing of the resistance body into its final shape and processing of take-out electrode wiring were all completed. CONSTITUTION:A dispersion layer 3 is formed on main surface of a silicon substrate 1 after or at the time of completion of building of a transistor and other elements in the substrate. And, after a silicon oxide membrane 2 was formed and a contact window was opened, a take-out electrode 4 is formed. And then, laser beam is applied by a ruby laser pulse oscillation for annealing of the product. Thus annealed dispersion layer resistance body takes resistance values of less fluctuation. Other than the aforementioned ruby laser, Ar laser and YAC laser may be used, and even in the case of continuous oscillation or pulse oscillation, the same effect can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870279A JPS5691460A (en) | 1979-12-25 | 1979-12-25 | Manufacturing of dispersion layer resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870279A JPS5691460A (en) | 1979-12-25 | 1979-12-25 | Manufacturing of dispersion layer resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5691460A true JPS5691460A (en) | 1981-07-24 |
Family
ID=15872864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16870279A Pending JPS5691460A (en) | 1979-12-25 | 1979-12-25 | Manufacturing of dispersion layer resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5691460A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100427A (en) * | 1980-01-16 | 1981-08-12 | Nec Corp | Manufacture of semiconductor device |
| US5084107A (en) * | 1989-06-05 | 1992-01-28 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and solar cell array with adhered electrode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130184A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor ic resistance element process |
-
1979
- 1979-12-25 JP JP16870279A patent/JPS5691460A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130184A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor ic resistance element process |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100427A (en) * | 1980-01-16 | 1981-08-12 | Nec Corp | Manufacture of semiconductor device |
| JPS626649B2 (en) * | 1980-01-16 | 1987-02-12 | Nippon Electric Co | |
| US5084107A (en) * | 1989-06-05 | 1992-01-28 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and solar cell array with adhered electrode |
| US5151373A (en) * | 1989-06-05 | 1992-09-29 | Mitsubishi Denki Kabushiki Kaisha | Method of making a solar cell electrode |
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