JPS5647996A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5647996A
JPS5647996A JP12122279A JP12122279A JPS5647996A JP S5647996 A JPS5647996 A JP S5647996A JP 12122279 A JP12122279 A JP 12122279A JP 12122279 A JP12122279 A JP 12122279A JP S5647996 A JPS5647996 A JP S5647996A
Authority
JP
Japan
Prior art keywords
addresses
matrix
blocks
access period
rom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12122279A
Other languages
Japanese (ja)
Inventor
Shigeki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12122279A priority Critical patent/JPS5647996A/en
Publication of JPS5647996A publication Critical patent/JPS5647996A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series

Abstract

PURPOSE:To attain the high-speed operation of a dynamic semiconductor ROM by dividing memory elements into blocks by addresses and by assigning addresses of blocks in the order of blocks while overlapping them. CONSTITUTION:Dynamic ROM memory cell matrixes 11 and 12 consists of FET memory cells divided into two by even addresses and odd addresses. Matrix 11 is accessed by sequential even addresses through address decoder 13 and column decoder 15 synchronizing with it to invert clock pulses in the former half and latter half of the access period, so that the output and inverted output of an FET cell selected via the clocked inverter will be read out. Matrix 12 is similarly read to over-lap the former half of the access period of matrix 12 with the latter half of the access period of matrix 11, so that the speed of the operation of ROM will be increased twice the normal speed.
JP12122279A 1979-09-20 1979-09-20 Semiconductor memory device Pending JPS5647996A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12122279A JPS5647996A (en) 1979-09-20 1979-09-20 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12122279A JPS5647996A (en) 1979-09-20 1979-09-20 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5647996A true JPS5647996A (en) 1981-04-30

Family

ID=14805911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12122279A Pending JPS5647996A (en) 1979-09-20 1979-09-20 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5647996A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (en) * 1981-07-08 1983-01-19 Toshiba Corp Semiconductor device
JPS61233495A (en) * 1985-04-08 1986-10-17 Nec Corp Semiconductor storage device
JPS62211644A (en) * 1986-03-03 1987-09-17 フエリツクス・シエラ−・ユニオ−ル・ゲ−・エム・ベ−・ハ−・ウント・コンパニ−・コマンデイ−トゲゼルシヤフト Polyolefine resin-covered water resistant photography supporting paper
JPS62252590A (en) * 1986-04-24 1987-11-04 Ascii Corp Memory device
JPS62271291A (en) * 1986-05-20 1987-11-25 Ascii Corp Memory device
JPS63180949A (en) * 1987-01-21 1988-07-26 Mitsubishi Paper Mills Ltd Base for photographic paper
JPH07211064A (en) * 1993-12-24 1995-08-11 Samsung Electron Co Ltd Method and device for memory addressing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230388A (en) * 1975-09-04 1977-03-08 Hitachi Ltd Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5380931A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Semiconductor lead-only memory
JPS54109730A (en) * 1978-02-17 1979-08-28 Hitachi Ltd Semiconductor read-only memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230388A (en) * 1975-09-04 1977-03-08 Hitachi Ltd Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5380931A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Semiconductor lead-only memory
JPS54109730A (en) * 1978-02-17 1979-08-28 Hitachi Ltd Semiconductor read-only memory

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (en) * 1981-07-08 1983-01-19 Toshiba Corp Semiconductor device
JPH0373080B2 (en) * 1981-07-08 1991-11-20 Tokyo Shibaura Electric Co
JPS61233495A (en) * 1985-04-08 1986-10-17 Nec Corp Semiconductor storage device
JPS62211644A (en) * 1986-03-03 1987-09-17 フエリツクス・シエラ−・ユニオ−ル・ゲ−・エム・ベ−・ハ−・ウント・コンパニ−・コマンデイ−トゲゼルシヤフト Polyolefine resin-covered water resistant photography supporting paper
JPS62252590A (en) * 1986-04-24 1987-11-04 Ascii Corp Memory device
JPS62271291A (en) * 1986-05-20 1987-11-25 Ascii Corp Memory device
JPS63180949A (en) * 1987-01-21 1988-07-26 Mitsubishi Paper Mills Ltd Base for photographic paper
JPH07211064A (en) * 1993-12-24 1995-08-11 Samsung Electron Co Ltd Method and device for memory addressing

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