JPS5587432A - Electron beam exposure method - Google Patents

Electron beam exposure method

Info

Publication number
JPS5587432A
JPS5587432A JP16315178A JP16315178A JPS5587432A JP S5587432 A JPS5587432 A JP S5587432A JP 16315178 A JP16315178 A JP 16315178A JP 16315178 A JP16315178 A JP 16315178A JP S5587432 A JPS5587432 A JP S5587432A
Authority
JP
Japan
Prior art keywords
electron
electron beam
generating material
secondary electron
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16315178A
Other languages
Japanese (ja)
Other versions
JPS6114653B2 (en
Inventor
Yasuo Furukawa
Yoshiaki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16315178A priority Critical patent/JPS5587432A/en
Publication of JPS5587432A publication Critical patent/JPS5587432A/en
Publication of JPS6114653B2 publication Critical patent/JPS6114653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a ring type pattern of electron beam by applying a high-speed electron beam while expanding the same to a pattern mask consisting of a permeable secondary electron generating material and an electron shielding material having a predetermined pattern. CONSTITUTION:A permeable secondary electron generating material 3 consisting of KCl is evaporated via an Al conductor 2 on a supporting insulator 1 which can be thinned and which consists of Al2O3 having a high electron beam permeability. An electron beam shielding material 4 consisting of Au is then provided on the secondary electron generating material 3 such as to obtain a predetermined pattern 5, and a pattern mask 6 is applied to an exposed outer surface of the insulator 1. Then, a high-speed electron beam is applied from an electron gun 8 to the mask 6 which expanding the electron beam by electron lens 9-11 to allow a multiplied amount of permeable secondary electron to occur on the whole surface of the secondary electron generating material 3. Since the secondary electron generating material 3 is provided on its outer surface with the electron beam shielding material 4, the secondary electron is generated in the form of a ring from the pattern 5 only.
JP16315178A 1978-12-26 1978-12-26 Electron beam exposure method Granted JPS5587432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16315178A JPS5587432A (en) 1978-12-26 1978-12-26 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16315178A JPS5587432A (en) 1978-12-26 1978-12-26 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS5587432A true JPS5587432A (en) 1980-07-02
JPS6114653B2 JPS6114653B2 (en) 1986-04-19

Family

ID=15768184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16315178A Granted JPS5587432A (en) 1978-12-26 1978-12-26 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS5587432A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712668A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712679A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
US7829863B2 (en) 2005-05-17 2010-11-09 Kyoto University Electron beam irradiation device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712668A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712679A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS6330150B2 (en) * 1980-06-27 1988-06-16 Nippon Electric Co
JPS6330862B2 (en) * 1980-06-27 1988-06-21 Nippon Electric Co
US7829863B2 (en) 2005-05-17 2010-11-09 Kyoto University Electron beam irradiation device
JP4945763B2 (en) * 2005-05-17 2012-06-06 国立大学法人京都大学 Electron beam exposure system

Also Published As

Publication number Publication date
JPS6114653B2 (en) 1986-04-19

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