JPS5539692A - Scanning method of electron beam - Google Patents

Scanning method of electron beam

Info

Publication number
JPS5539692A
JPS5539692A JP11426778A JP11426778A JPS5539692A JP S5539692 A JPS5539692 A JP S5539692A JP 11426778 A JP11426778 A JP 11426778A JP 11426778 A JP11426778 A JP 11426778A JP S5539692 A JPS5539692 A JP S5539692A
Authority
JP
Japan
Prior art keywords
substrate
electron beam
starting point
scanning starting
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11426778A
Other languages
Japanese (ja)
Inventor
Hisashi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP11426778A priority Critical patent/JPS5539692A/en
Publication of JPS5539692A publication Critical patent/JPS5539692A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To scan with an electron beam a limited section of a substrate for use in producing a super-LSI, by staggering a scanning starting point backwardly with respect to the scanning direction by a distance corresponding to the time by which the supply of an electric current is delayed, or without irradiating an electron beam initially up to a proper scanning starting point, whereby a uniformly exposed substrate can be obtained.
CONSTITUTION: An Si substrate having an oxide film thereon is coated with a resist, and this limited section is scanned with an electron beam. At this time, a scanning starting point is staggered backwardly with respect to the scanning direction by a distance a corresponding to the time by which the supply of an electric current is delayed so that an electron beam is not irradiated initially up to a proper scanning starting point. This prevents that portion of the substrate which is close to the scanning starting point from being swollen owing to no over-exposure at the mentioned portion of the substrate. Namely, the substrate is uniformly exposed so that it has no over-exposed portions.
COPYRIGHT: (C)1980,JPO&Japio
JP11426778A 1978-09-14 1978-09-14 Scanning method of electron beam Pending JPS5539692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11426778A JPS5539692A (en) 1978-09-14 1978-09-14 Scanning method of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11426778A JPS5539692A (en) 1978-09-14 1978-09-14 Scanning method of electron beam

Publications (1)

Publication Number Publication Date
JPS5539692A true JPS5539692A (en) 1980-03-19

Family

ID=14633517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11426778A Pending JPS5539692A (en) 1978-09-14 1978-09-14 Scanning method of electron beam

Country Status (1)

Country Link
JP (1) JPS5539692A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753938A (en) * 1980-09-17 1982-03-31 Toshiba Corp Electron beam exposure apparatus
JPS57161900U (en) * 1981-04-03 1982-10-12
JP2002110514A (en) * 2000-09-28 2002-04-12 Advantest Corp Electron beam aligner, exposure method and semiconductor device manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113683A (en) * 1976-03-19 1977-09-22 Nec Corp Electron beam stabilizing time control circuit
JPS5324790A (en) * 1976-08-20 1978-03-07 Hitachi Ltd Semiconductor device
JPS53125697A (en) * 1977-04-11 1978-11-02 Nippon Electron Optics Lab Electron ray exposing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113683A (en) * 1976-03-19 1977-09-22 Nec Corp Electron beam stabilizing time control circuit
JPS5324790A (en) * 1976-08-20 1978-03-07 Hitachi Ltd Semiconductor device
JPS53125697A (en) * 1977-04-11 1978-11-02 Nippon Electron Optics Lab Electron ray exposing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753938A (en) * 1980-09-17 1982-03-31 Toshiba Corp Electron beam exposure apparatus
JPS631743B2 (en) * 1980-09-17 1988-01-13 Tokyo Shibaura Electric Co
JPS57161900U (en) * 1981-04-03 1982-10-12
JP2002110514A (en) * 2000-09-28 2002-04-12 Advantest Corp Electron beam aligner, exposure method and semiconductor device manufacturing method

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