JPS55132042A - Manufacture of bevel semiconductor device - Google Patents

Manufacture of bevel semiconductor device

Info

Publication number
JPS55132042A
JPS55132042A JP3770579A JP3770579A JPS55132042A JP S55132042 A JPS55132042 A JP S55132042A JP 3770579 A JP3770579 A JP 3770579A JP 3770579 A JP3770579 A JP 3770579A JP S55132042 A JPS55132042 A JP S55132042A
Authority
JP
Japan
Prior art keywords
slope
concave groove
acid
running
bevel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3770579A
Other languages
Japanese (ja)
Inventor
Eiji Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP3770579A priority Critical patent/JPS55132042A/en
Publication of JPS55132042A publication Critical patent/JPS55132042A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To facilitate beveling and thus to improve mass productivity by forming a concave groove having a slope running at an obtuse angle to the surface of a semiconductor substrate and a window covering the slope midway to the bottom of the concave groove on the semiconductor substrate through selective etching. CONSTITUTION:As Si substrate 1 is subjected to selective etching by means of a mixed acid consisting of fluoric acid, nitric acid and water, and a concave groove having a slope 3 running at an obtuse angle to the substrate surface 2 and a bottom 4 is formed thereon. In this case, an angle theta1 given by an extended face of the surface 2 and the slope 3 is kept smaller than 90 deg.. Next, a photoresist film 5 having a window 7 covering the slope 3 midway to the bottom 4 is formed in the concave groove, and a bevel 6 running at an acute angle theta2 to the surface 2 is produced through etching by means of a mixed acid consisting of fluoric acid, nitric acid and acetic acid. Thus a concavity 8 is obtainable at theta2=90 deg.-theta1, and according to this method, beveling is extremely facilitated at low cost.
JP3770579A 1979-03-31 1979-03-31 Manufacture of bevel semiconductor device Pending JPS55132042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3770579A JPS55132042A (en) 1979-03-31 1979-03-31 Manufacture of bevel semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3770579A JPS55132042A (en) 1979-03-31 1979-03-31 Manufacture of bevel semiconductor device

Publications (1)

Publication Number Publication Date
JPS55132042A true JPS55132042A (en) 1980-10-14

Family

ID=12504933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3770579A Pending JPS55132042A (en) 1979-03-31 1979-03-31 Manufacture of bevel semiconductor device

Country Status (1)

Country Link
JP (1) JPS55132042A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164572A (en) * 1980-05-22 1981-12-17 Meidensha Electric Mfg Co Ltd Beveling process of semiconductor element
JPS582075A (en) * 1981-06-27 1983-01-07 Tohoku Metal Ind Ltd Processing of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS451950Y1 (en) * 1966-07-14 1970-01-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS451950Y1 (en) * 1966-07-14 1970-01-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164572A (en) * 1980-05-22 1981-12-17 Meidensha Electric Mfg Co Ltd Beveling process of semiconductor element
JPS582075A (en) * 1981-06-27 1983-01-07 Tohoku Metal Ind Ltd Processing of semiconductor device

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