JPS644082A - Manufacture of oscillatory type transducer - Google Patents

Manufacture of oscillatory type transducer

Info

Publication number
JPS644082A
JPS644082A JP15907387A JP15907387A JPS644082A JP S644082 A JPS644082 A JP S644082A JP 15907387 A JP15907387 A JP 15907387A JP 15907387 A JP15907387 A JP 15907387A JP S644082 A JPS644082 A JP S644082A
Authority
JP
Japan
Prior art keywords
film
substrate
type transducer
oscillatory
stuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15907387A
Other languages
Japanese (ja)
Other versions
JPH0628320B2 (en
Inventor
Kyoichi Ikeda
Tetsuya Watanabe
Hideki Kuwayama
Takashi Kobayashi
Sunao Nishikawa
Takashi Yoshida
Kinji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP15907387A priority Critical patent/JPH0628320B2/en
Publication of JPS644082A publication Critical patent/JPS644082A/en
Publication of JPH0628320B2 publication Critical patent/JPH0628320B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To manufacture an oscillatory type transducer good in its accuracy, by forming a gap correspondence part and a shell correspondence part on a substrate to be unified with oscillatory beams and then removing the gap correspondence part by an etching method. CONSTITUTION:A silicon oxide film 201 is formed on a substrate 1. Required portions 202 of the film 201 are removed to form an (n) diffusion layer 203 which corresponds to oscillatory beams 3 and 4. Next a recessed part 204 is formed in the substrate 1. Silicon oxide is stuck as a film 205 on a surface of the substrate 1, and on the periphery of the diffusion layer 203 the silicon oxide is stuck in the form of a film 206 corresponding to a gap part 25. Next a part of the film 205 and the film 6 are removed. A film 207 corresponding to a shell 5 is stuck on the films 205 and 206. A fluid injection port 208 is formed in the film 207. HF is poured from the injection port 208 so that the films 205 and 206 are removed by an etching method. Next the injection port 208 is closed. Hence an oscillatory type transducer can be obtained so that oscillation beams and the shell part are formed to be unified with the substrate.
JP15907387A 1987-06-26 1987-06-26 Vibration transducer manufacturing method Expired - Fee Related JPH0628320B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15907387A JPH0628320B2 (en) 1987-06-26 1987-06-26 Vibration transducer manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15907387A JPH0628320B2 (en) 1987-06-26 1987-06-26 Vibration transducer manufacturing method

Publications (2)

Publication Number Publication Date
JPS644082A true JPS644082A (en) 1989-01-09
JPH0628320B2 JPH0628320B2 (en) 1994-04-13

Family

ID=15685627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15907387A Expired - Fee Related JPH0628320B2 (en) 1987-06-26 1987-06-26 Vibration transducer manufacturing method

Country Status (1)

Country Link
JP (1) JPH0628320B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192370A (en) * 1990-11-26 1992-07-10 Nissan Motor Co Ltd Semiconductor acceleration sensor
US5161066A (en) * 1989-12-25 1992-11-03 Asahi Kogaku Kogyo Kabushiki Kaisha Engaging mechanism of roller and guide groove in optical element
JPH07114289B2 (en) * 1989-02-16 1995-12-06 ウイスコンシン アラムニ リサーチ ファンデーション Formation of microstructure by removing liquid by freezing and sublimation
JP2006526509A (en) * 2003-06-04 2006-11-24 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Micro electromechanical device and sealing method and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114289B2 (en) * 1989-02-16 1995-12-06 ウイスコンシン アラムニ リサーチ ファンデーション Formation of microstructure by removing liquid by freezing and sublimation
US5161066A (en) * 1989-12-25 1992-11-03 Asahi Kogaku Kogyo Kabushiki Kaisha Engaging mechanism of roller and guide groove in optical element
JPH04192370A (en) * 1990-11-26 1992-07-10 Nissan Motor Co Ltd Semiconductor acceleration sensor
JP2006526509A (en) * 2003-06-04 2006-11-24 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Micro electromechanical device and sealing method and manufacturing method thereof
JP2011245620A (en) * 2003-06-04 2011-12-08 Robert Bosch Gmbh Micro electromechanical system, and method for encapsulating and fabricating the same

Also Published As

Publication number Publication date
JPH0628320B2 (en) 1994-04-13

Similar Documents

Publication Publication Date Title
JPS56114319A (en) Method for forming contact hole
JPS644082A (en) Manufacture of oscillatory type transducer
JPS57130431A (en) Manufacture of semiconductor device
JPS552982A (en) Semi-conductor layer thickness measuring method
JPS57124440A (en) Compound etching method
JPS5470791A (en) Thin plate piezoelectric oscillator
JPS57100733A (en) Etching method for semiconductor substrate
JPS55125632A (en) Etching
JPS5715423A (en) Manufacture of semiconductor device
JPS57100734A (en) Etching method for semiconductor substrate
JPS57130433A (en) Manufacture of single crystal semiconductor thin film
JPS57148371A (en) Manufacture of mesa type semiconductor device
JPS5496363A (en) Electrode forming method for semiconductor device
JPS6442822A (en) Processing of semiconductor substrate
JPS5572052A (en) Preparation of semiconductor device
JPS5731171A (en) Semiconductor device
JPS5633841A (en) Manufacture of semiconductor device
JPS5743431A (en) Manufacture of semiconductor device
JPS53132279A (en) Production of semiconductor device
JPS5797629A (en) Manufacture of semiconductor device
JPS5325350A (en) Dicing method of semiconductor substrates
JPS6410628A (en) Manufacture of semiconductor device
JPS57183025A (en) Semiconductor device
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS57176818A (en) Manufacture of crystal oscillator

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees