JPH11329741A - Functional thin film device - Google Patents
Functional thin film deviceInfo
- Publication number
- JPH11329741A JPH11329741A JP10133945A JP13394598A JPH11329741A JP H11329741 A JPH11329741 A JP H11329741A JP 10133945 A JP10133945 A JP 10133945A JP 13394598 A JP13394598 A JP 13394598A JP H11329741 A JPH11329741 A JP H11329741A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- bank
- affinity
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 179
- 239000000463 material Substances 0.000 claims abstract description 115
- 239000007788 liquid Substances 0.000 claims abstract description 83
- 239000007791 liquid phase Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 150000002894 organic compounds Chemical class 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 150000002484 inorganic compounds Chemical class 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000004040 coloring Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000010030 laminating Methods 0.000 abstract description 8
- 238000000638 solvent extraction Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 272
- 238000000034 method Methods 0.000 description 38
- 239000000758 substrate Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- -1 Al and Ta Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 125000006230 (methoxyethoxy)ethanyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】 本発明は、ＥＬ（エレクト
ロルミネッセンス）素子またはＬＥＤ（発光ダイオー
ド）素子などを備えた表示装置やカラーフィルタの製造
に適した薄膜形成技術に係わる。特に仕切部材間に多層
の薄膜層を形成する際に有利な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming technique suitable for manufacturing a display device or a color filter including an EL (electroluminescence) element or an LED (light emitting diode) element. In particular, the present invention relates to a technique that is advantageous when forming multiple thin film layers between partition members.
【０００２】[0002]
【従来の技術】表示装置における発光層やカラーフィル
タにおける着色層を有機半導体や着色樹脂などの薄膜材
料液を用いて製造する技術が存在する。これらの技術は
薄膜材料液を画素領域単位で充填し加熱処理で硬化させ
て画素領域を覆う薄膜層を形成するというものである。
以下、これら一定の機能を備えた薄膜層を備えるデバイ
スを「機能性薄膜デバイス」と称する。2. Description of the Related Art There is a technique for manufacturing a light emitting layer in a display device and a colored layer in a color filter using a thin film material liquid such as an organic semiconductor or a colored resin. In these techniques, a thin film material liquid is filled in pixel area units and cured by heat treatment to form a thin film layer covering the pixel area.
Hereinafter, a device including a thin film layer having a certain function is referred to as a “functional thin film device”.
【０００３】画素領域に薄膜材料液を充填する場合、吐
出された薄膜材料液が隣の画素領域に流出することを防
止するために、画素領域を仕切る仕切部材（以下「バン
ク」ともいう。また仕切部材を構成する層を「バンク
層」という。）を設けて、仕切部材に囲まれる画素領域
に薄膜材料液を充填する。バンクで囲まれた画素領域に
は成膜後の体積に比べてはるかに大きい薄膜材料液が充
填される。しかし表示装置は一般に薄いことが要求され
るため、バンクをやたらに高く形成することができな
い。このことからバンクやバンクで囲まれた画素領域
が、薄膜材料液に対してどのような濡れ性（親和性）を
示すかで充填された薄膜材料液の挙動が異なる。例えば
特開平９−２０３８０３号や特開平９−２３０１２９号
には、表面処理によりバンクの濡れ性を調整する発明が
開示されている。When a pixel region is filled with a thin film material liquid, a partition member (hereinafter, also referred to as a "bank") for partitioning the pixel region in order to prevent the discharged thin film material liquid from flowing out to an adjacent pixel region. A layer constituting the partition member is referred to as a “bank layer”), and a pixel region surrounded by the partition member is filled with a thin film material liquid. The pixel region surrounded by the bank is filled with a thin film material liquid that is much larger than the volume after film formation. However, since the display device is generally required to be thin, the bank cannot be formed too high. From this, the behavior of the filled thin film material liquid differs depending on the wettability (affinity) of the bank or the pixel region surrounded by the bank with respect to the thin film material liquid. For example, JP-A-9-203803 and JP-A-9-230129 disclose inventions in which the wettability of a bank is adjusted by surface treatment.
【０００４】[0004]
【発明が解決しようとする課題】バンクが薄膜材料液に
対し親和性である場合、バンクと薄膜材料液との密着性
がよく、薄膜材料液がバンクの表面に沿って広がりやす
い。このため、図８（ａ）に示すようにバンクの高さを
超える量の薄膜材料液を充填すると、バンクの側面（バ
ンクの幅方向の壁をなす傾斜面をいう）や上面（バンク
の頂部にある水平面をいう）で薄膜材料液がはじかれる
ことなく、薄膜材料液がバンクを容易に乗り越えて隣接
する画素領域に容易に流出してしまう。逆にバンクが薄
膜材料液に対し非親和性を示す場合、バンクと薄膜材料
液との密着性が悪く、薄膜材料液がバンクの表面に沿っ
て広がりにくい。このため、図８（ｂ）に示すようにバ
ンクの高さを越える量の薄膜材料液を充填しても、薄膜
材料液の表面張力が作用しバンクの上面を越えて薄膜材
料液が広がって隣の画素領域に薄膜材料液が流れ出すこ
とはない。このように盛り上がった状態で薄膜材料液を
加熱して溶媒を蒸発させると、側面で薄膜材料液がはじ
かれたまま薄膜材料液の嵩が減っていく。このため、成
膜後には図８（ｃ）に示すように中央部で厚く周辺部で
薄い薄膜が形成されてしまう。中央部でも周辺部でも均
一な厚みになり表面が平面をなすように薄膜が形成され
ていないと、色むらが生じたり信頼性が低下したりす
る。When the bank has an affinity for the thin film material liquid, the adhesion between the bank and the thin film material liquid is good, and the thin film material liquid easily spreads along the surface of the bank. For this reason, as shown in FIG. 8A, when the thin film material liquid is filled in an amount exceeding the height of the bank, the side surface (referred to as an inclined surface forming a wall in the width direction of the bank) or the upper surface (the top portion of the bank) The thin film material liquid easily jumps over the bank and flows out to the adjacent pixel region without being repelled by the thin film material liquid. Conversely, when the bank has incompatibility with the thin film material liquid, the adhesion between the bank and the thin film material liquid is poor, and the thin film material liquid is unlikely to spread along the surface of the bank. For this reason, as shown in FIG. 8B, even if the thin film material liquid is filled in an amount exceeding the height of the bank, the surface tension of the thin film material liquid acts and the thin film material liquid spreads over the upper surface of the bank. The thin film material liquid does not flow into the adjacent pixel area. When the thin film material liquid is heated to evaporate the solvent in such a raised state, the volume of the thin film material liquid decreases while the thin film material liquid is repelled on the side surface. For this reason, after film formation, a thin film is formed at the center and thin at the periphery as shown in FIG. 8C. If the thin film is not formed so that the thickness becomes uniform at both the central portion and the peripheral portion and the surface is flat, color unevenness occurs and the reliability decreases.
【０００５】特に、多層の薄膜で形成される有機半導体
膜などの装置を製造する場合には、薄膜を積層するにあ
たりいずれの薄膜層も均一な厚みに形成されていなけれ
ばならない。前記特開平９−２０３８０３号や特開平９
−２３０１２９号には、表面処理によりバンクの濡れ性
を調整する発明が開示されているが、薄膜を均一な厚み
に形成する方法や各膜厚を均一にしながら多数積層する
技術については開示されていなかった。In particular, when manufacturing a device such as an organic semiconductor film formed of a multi-layered thin film, all thin film layers must be formed to have a uniform thickness when laminating the thin films. JP-A-9-203803 and JP-A-9-203803
Japanese Patent No. 230129 discloses an invention for adjusting the wettability of a bank by surface treatment, but discloses a method of forming a thin film to a uniform thickness and a technique of laminating a large number of layers while making each film uniform. Did not.
【０００６】そこで本発明の課題は、親和性の程度の異
なる領域を備えたバンクを備えることにより、均一な厚
みで積層された薄膜層を備えた機能性薄膜デバイスを提
供することである。これにより明るさや色にむらが生じ
ない画像表示が可能で信頼性の高い表示装置やカラーフ
ィルタ等を提供することができる。An object of the present invention is to provide a functional thin-film device having thin-film layers having a uniform thickness by providing banks having regions having different degrees of affinity. This makes it possible to provide a highly reliable display device, color filter, and the like that can display an image without causing unevenness in brightness and color.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決する発明
は、仕切部材であるバンクで囲まれた領域に１層以上の
薄膜層が積層された薄膜構造を備える機能性薄膜デバイ
スであって、バンクは、薄膜層の液相材料である薄膜材
料液に対し親和性を示す親和性バンク層と当該薄膜材料
液に対し非親和性を示す非親和性バンク層とが交互に積
層されて構成され、薄膜層は、親和性バンク層とその上
に積層された非親和性バンク層との境界を含む平面がそ
の界面となるようにその厚みが調整されて形成されてい
ることを特徴とする機能性薄膜デバイスである。The present invention for solving the above problems is a functional thin film device having a thin film structure in which one or more thin film layers are stacked in a region surrounded by a bank as a partition member, The bank is configured by alternately laminating an affinity bank layer having an affinity for the thin film material liquid, which is a liquid phase material of the thin film layer, and a non-affinity bank layer having no affinity for the thin film material liquid. The thin film layer is formed so that its thickness is adjusted so that a plane including a boundary between the affinity bank layer and the non-affinity bank layer laminated thereon is the interface. It is a conductive thin film device.
【０００８】ここで「バンク」とは、例えば半導体薄膜
素子を利用した表示装置の画素を仕切るために設けた
り、カラーフィルタの画素領域を仕切るために設けたり
する仕切部材のことをいう。バンクの積層構造は層ごと
に非親和性材料や親和性材料の種類を変えて用いてもよ
い。各層の厚みは層ごとに変更して積層してもよい。バ
ンク形成面とはこのバンクを設ける面のことで、表示装
置等の駆動基板であってもカラーフィルタ等の透明基板
等であってもよい。[0008] Here, the "bank" refers to a partition member provided for partitioning pixels of a display device using, for example, a semiconductor thin film element, or provided for partitioning a pixel region of a color filter. The stacked structure of the bank may be used by changing the type of the non-affinity material or the affinity material for each layer. The thickness of each layer may be changed for each layer and laminated. The bank forming surface is a surface on which the banks are provided, and may be a driving substrate of a display device or a transparent substrate of a color filter or the like.
【０００９】バンク層が「親和性」であるか「非親和
性」であるかは、充填する薄膜材料液がどのような性質
を備えているかで決まる。例えば極性分子を多く含む薄
膜材料液であれば極性基を有する表面が親和性を示し、
非極性基を有する表面が非親和性を示す。逆に極性分子
が少数派の薄膜材料液であれば極性基を有する表面が非
親和性を示し、非極性基を有する表面が親和性を示す。
また、充填する薄膜材料液の表面張力によってもバンク
層の親和性の程度が決まる。例えば、水に対して非親和
性（疎水性）を示すバンク層であっても薄膜材料液が水
より表面張力の小さい溶剤を多量に含んでいると、その
薄膜材料液は水より表面張力が小さくなり、該バンク層
は該薄膜材料液に対して親和性を示すことになる。した
がって、薄膜材料液を何にするかは、製造対象によって
種々に変更して適用することになる。薄膜材料液が一層
ごとに極性分子を多く含むか否かが変わる場合には、そ
の薄膜材料液で形成される薄膜層に対応する位置に設け
られる二層のバンク層のうち、この薄膜材料液に対して
下層がその薄膜材料液に対し非親和性を示し上層が親和
性を示すように、層構造を変更して適用可能である。Whether the bank layer is "affinity" or "non-affinity" is determined by the properties of the thin film material to be filled. For example, in the case of a thin film material liquid containing many polar molecules, the surface having a polar group shows affinity,
Surfaces with non-polar groups show non-affinity. Conversely, if the polar molecule is a minority thin film material liquid, the surface having a polar group exhibits non-affinity, and the surface having a non-polar group exhibits affinity.
The affinity of the bank layer is also determined by the surface tension of the thin film material liquid to be filled. For example, even if the thin film material liquid contains a large amount of a solvent having a lower surface tension than water, even if the bank layer has incompatibility (hydrophobicity) with water, the thin film material liquid has a surface tension higher than that of water. It becomes smaller, and the bank layer shows affinity for the thin film material liquid. Therefore, what is used as the thin film material liquid is variously changed depending on the object to be manufactured and applied. When it is determined whether the thin-film material liquid contains a large amount of polar molecules for each layer, the thin-film material solution is selected from the two bank layers provided at positions corresponding to the thin-film layers formed by the thin-film material solution. However, the present invention can be applied by changing the layer structure so that the lower layer has no affinity for the thin film material liquid and the upper layer has affinity.
【００１０】「機能性薄膜デバイス」とは単一層または
複数層の薄膜層を備えるあらゆる装置を含むものとす
る。例えば有機ＥＬ素子等で構成された表示装置やカラ
ーフィルタが該当する。さらに光学装置に限定されるこ
となく、１以上の薄膜層を備えることにより、一定の機
能・作用・効果を奏する装置に適用可能である。[0010] The term "functional thin-film device" is intended to include any device having a single or multiple thin-film layers. For example, a display device or a color filter including an organic EL element or the like is applicable. Further, the present invention is not limited to an optical device, and can be applied to a device having a certain function, function, and effect by providing one or more thin film layers.
【００１１】具体的な構造として、バンクは、最下層に
親和性バンク層を備えていたり、最下層に非親和性バン
ク層を備えていたりする。最上層に親和性バンク層を備
えていてもよい。この場合には、複数の領域に共通なバ
ンクを越えた共通の薄膜層を形成可能となる。また、バ
ンクは光を透過しない不透明層を備えていてもよい。カ
ラーフィルタにおけるブラックマトリクスのように機能
させることができる。As a specific structure, the bank has an affinity bank layer at the lowermost layer or a non-affinity bank layer at the lowermost layer. The uppermost layer may be provided with an affinity bank layer. In this case, it is possible to form a common thin film layer over a common bank in a plurality of regions. Further, the bank may include an opaque layer that does not transmit light. It can function like a black matrix in a color filter.
【００１２】ここで親和性バンク層は、薄膜材料液に対
する接触角が３０度以下であることが好ましく、非親和
性バンク層は、薄膜材料液に対する接触角が４０度以上
であることが好ましい。The affinity bank layer preferably has a contact angle with the thin film material liquid of 30 degrees or less, and the non-affinity bank layer preferably has a contact angle with the thin film material liquid of 40 degrees or more.
【００１３】親和性バンク層および非親和性バンク層
は、Ａｌ、Ｔａ等の金属、酸化シリコン、窒化シリコ
ン、アモルファスシリコン、ポリシリコン、ポリイミ
ド、フッ素結合を有する有機化合物、フォトレジストの
うちいずれか二種以上から構成される無機化合物または
有機化合物で構成されることが好ましい。導電性を有し
てもよいなら金属を使用でき絶縁性が必要なら金属以外
の化合物で構成する。これらの材料は、二種類の材料の
薄膜材料液に対する接触角の相違によって、親和性バン
ク層になるか非親和性バンク層になるかが決まる。すな
わち親和性であるか非親和性であるかは相対的に決まり
絶対的なものではない。表面処理の有無によっても親和
性の程度が変動する。同一の材料が親和性バンク層とし
て用いられたり非親和性バンク層として用いられたりす
る。The affinity bank layer and the non-affinity bank layer are formed of any one of metals such as Al and Ta, silicon oxide, silicon nitride, amorphous silicon, polysilicon, polyimide, an organic compound having a fluorine bond, and photoresist. It is preferable to be composed of an inorganic compound or an organic compound composed of at least one kind. A metal can be used if it has conductivity, and a compound other than a metal is used if insulation is required. The difference between the contact angles of these two materials with the thin film material solution determines whether the material becomes an affinity bank layer or a non-affinity bank layer. That is, the affinity or non-affinity is determined relatively and not absolutely. The degree of affinity varies depending on the presence or absence of surface treatment. The same material may be used as an affinity bank layer or a non-affinity bank layer.
【００１４】機能性薄膜デバイスの一つの具体的な構造
として、薄膜層には発光作用を示す発光層を含み、表示
装置として機能可能に構成される。この場合、例えば複
数の前記領域にまたがって形成された金属層を前記薄膜
層の最上層として備えている。また領域の底部には透明
電極を備えている。さらに複数の薄膜層は、下層に透明
電極層を備え、その上層に発光層を備えている。As one specific structure of the functional thin-film device, the thin-film layer includes a light-emitting layer having a light-emitting action, and is configured to function as a display device. In this case, for example, a metal layer formed over a plurality of the regions is provided as the uppermost layer of the thin film layer. A transparent electrode is provided at the bottom of the region. Further, the plurality of thin film layers include a transparent electrode layer as a lower layer and a light emitting layer as an upper layer.
【００１５】また他の機能性薄膜デバイスの具体的な構
造として、薄膜層には画素に色彩を付与するための着色
層を含み、カラーフィルタとして機能可能に構成されて
いる。この場合、例えば複数の領域にまたがって形成さ
れた透明導電層を薄膜層の最上層として備えている。As a specific structure of another functional thin film device, the thin film layer includes a coloring layer for giving a color to a pixel, and is configured to function as a color filter. In this case, for example, a transparent conductive layer formed over a plurality of regions is provided as the uppermost layer of the thin film layer.
【００１６】[0016]
【発明の実施の形態】次に本発明の好適な実施の形態
を、図面を参照して説明する。 （実施形態１）本発明の実施形態１は、本発明の機能性
薄膜デバイスとしての構造を備えた有機ＥＬ素子に関す
る。図１に本実施形態の有機ＥＬ素子の積層構造断面図
を示す。本有機ＥＬ素子は、図１に示すように、駆動基
板１００、バンク１１０、発光層１３１、透明電極１４
１および金属層１５１を備えている。この図では、簡略
化のために一つの画素を表示させるための領域（画素領
域）のみを図示してある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a preferred embodiment of the present invention will be described with reference to the drawings. Embodiment 1 Embodiment 1 of the present invention relates to an organic EL device having a structure as a functional thin film device of the present invention. FIG. 1 shows a cross-sectional view of the laminated structure of the organic EL element of the present embodiment. As shown in FIG. 1, the present organic EL device includes a driving substrate 100, a bank 110, a light emitting layer 131, and a transparent electrode 14.
1 and a metal layer 151. In this figure, only a region (pixel region) for displaying one pixel is shown for simplification.
【００１７】駆動基板１００は、図示しない薄膜トラン
ジスタ（ＴＦＴ：Thin Film Transistor）、配線膜およ
び絶縁膜等が多層に積層されており、金属層１５１およ
び各透明電極１４１間に画素単位で電圧を印加可能に構
成されている。駆動基板１００は公知の薄膜プロセスに
よって製造される。The drive substrate 100 has a multilayer structure of thin film transistors (TFTs), wiring films, insulating films, and the like (not shown). A voltage can be applied between the metal layer 151 and each transparent electrode 141 in pixel units. Is configured. The drive substrate 100 is manufactured by a known thin film process.
【００１８】バンク１１０は、親和性バンク層１１１、
非親和性バンク層１２１および親和性バンク層１１２を
下から順に積層して形成されている。親和性バンク層１
１１、１１２および非親和性バンク層１２１は、絶縁無
機化合物または絶縁有機化合物によってそれぞれ構成さ
れている。具体的には、酸化シリコン、窒化シリコン、
アモルファスシリコン、ポリシリコン、ポリイミドまた
はフッ素化合物のうちいずれか二種から選択される。Ａ
ｌ、Ｔａ等の金属もバンク層として必要な接触角を備え
るが、導電性を有する点で、本実施形態では使用するこ
とができない。好ましくは、親和性バンク層１１１，１
１２は、発光層１３１を形成する元となる薄膜材料液に
対する接触角が３０度以下となるように調整される。ま
た非親和性バンク層１２１は、薄膜材料液に対する接触
角が４０度以上となるように調整される。ただし、親和
性の程度は相対的なものであるため、親和性バンク層の
親和性の程度が非親和性バンク層より高くなるように設
定する必要がある。つまり、接触角の大きさがどのよう
な材料を組み合わせても常に 非親和性バンク層＞親和性バンク層 という関係を満たすように調整されている。また、親和
性バンク層１１１の厚み、すなわち親和性バンク層１１
１および非親和性バンク層１２１間の境界までの高さ
は、発光層１３１の厚みと等しくなるように調整されて
いる。言い換えれば、この境界の高さを発光層に必要と
される厚みに調整しておく。非親和性バンク層１２１の
厚みは、薄膜材料液を十分にはじき、薄膜材料液を上層
の親和性バンク層１１２から分離させるのに十分な厚み
に形成する。また親和性バンク層１１２の厚みは、金属
層１５１の元となる薄膜材料液を広がりやすくすれば十
分であるため、塗布法など、採用した製造方法によって
ほぼ均一に形成可能な厚みがあればよい。バンク１１０
は、複数のバンク層をフォトリソグラフィ法等で積層し
ていくことで製造される。膜形成は、無機化合物膜の場
合にはスパッタ法、ＣＶＤ法または塗布法、有機化合物
膜の場合には塗布法を使用する。The bank 110 includes an affinity bank layer 111,
The non-affinity bank layer 121 and the affinity bank layer 112 are laminated in order from the bottom. Affinity bank layer 1
11 and 112 and the non-affinity bank layer 121 are respectively made of an insulating inorganic compound or an insulating organic compound. Specifically, silicon oxide, silicon nitride,
It is selected from any two of amorphous silicon, polysilicon, polyimide and fluorine compound. A
Although metals such as l and Ta also have a contact angle required as a bank layer, they cannot be used in this embodiment because they have conductivity. Preferably, the affinity bank layers 111, 1
12 is adjusted so that the contact angle with the thin film material liquid from which the light emitting layer 131 is formed is 30 degrees or less. The non-affinity bank layer 121 is adjusted so that the contact angle with the thin film material liquid is 40 degrees or more. However, since the degree of affinity is relative, it is necessary to set the affinity bank layer to have a higher affinity than the non-affinity bank layer. In other words, the contact angle is adjusted to always satisfy the relationship of non-affinity bank layer> affinity bank layer regardless of the combination of materials. The thickness of the affinity bank layer 111, that is, the affinity bank layer 11
The height up to the boundary between 1 and the incompatible bank layer 121 is adjusted to be equal to the thickness of the light emitting layer 131. In other words, the height of this boundary is adjusted to the thickness required for the light emitting layer. The thickness of the non-affinity bank layer 121 is formed to be sufficient to repel the thin film material liquid and separate the thin film material liquid from the upper affinity bank layer 112. In addition, the thickness of the affinity bank layer 112 is sufficient if the thin film material liquid that is the base of the metal layer 151 can be easily spread, so that the affinity bank layer 112 has a thickness that can be formed substantially uniformly by an adopted manufacturing method such as a coating method. . Bank 110
Is manufactured by laminating a plurality of bank layers by a photolithography method or the like. For the film formation, a sputtering method, a CVD method or a coating method is used for an inorganic compound film, and a coating method is used for an organic compound film.
【００１９】発光層１３１は、電流を流すことにより発
光する材料、例えばポリフェニレンビニレン（ＰＰＶ）
等公知の有機半導体材料を使用して、十分な光量が得ら
れる厚み、例えば０．０５μｍ〜０．２μｍ程度積層し
て構成される。この厚みは上述したように下層の親和性
バンク層１１１の厚みと等しくなっている。発光層１３
１はインクジェット方式などの方法によって液相の薄膜
材料液をバンク１１０で囲まれる凹部１０１に充填し加
熱処理することで形成される。カラーの有機ＥＬ素子を
形成する場合には、赤、緑または青などの異なる発光色
を有する発光層を形成する必要がある。したがって、隣
接する領域に異なる発光層を形成する必要があり、任意
の位置に異なる薄膜材料液を吐出できるインクジェット
方式で発光層を形成する方法は非常に有効な方法であ
る。The light-emitting layer 131 is made of a material that emits light when a current flows, for example, polyphenylenevinylene (PPV).
Using a known organic semiconductor material or the like, a layer capable of obtaining a sufficient amount of light, for example, about 0.05 μm to 0.2 μm is laminated. This thickness is equal to the thickness of the lower affinity bank layer 111 as described above. Light emitting layer 13
1 is formed by filling a concave portion 101 surrounded by a bank 110 with a liquid phase thin film material liquid by a method such as an ink jet method and performing a heat treatment. In the case of forming a color organic EL element, it is necessary to form light emitting layers having different emission colors such as red, green and blue. Therefore, it is necessary to form different light emitting layers in adjacent regions, and a method of forming a light emitting layer by an ink jet method capable of discharging different thin film material liquids to arbitrary positions is a very effective method.
【００２０】透明電極１４１は、導電性がありかつ光透
過性のある材料、例えばＩＴＯ、ネサ等により構成され
ている。透明電極１４１は、画素単位で発光させるため
に、画素領域ごとに独立して設けられており、その厚み
が０．０５μｍ〜０．２μｍ程度に調整されている。The transparent electrode 141 is made of a conductive and light transmissive material, for example, ITO, Nesa or the like. The transparent electrode 141 is provided independently for each pixel region in order to emit light in pixel units, and its thickness is adjusted to about 0.05 μm to 0.2 μm.
【００２１】金属層１５１は、導電性のある金属材料、
例えばアルミニウムリチウム（Ａｌ−Ｌｉ）を０．１μ
ｍ〜１．０μｍ程度積層して構成される。金属層１５１
は、透明電極１４１に対向する共通電極として作用可能
に、総ての画素にまたがってバンク１１０を覆うように
形成されている。The metal layer 151 is made of a conductive metal material,
For example, 0.1 μm of aluminum lithium (Al-Li)
It is formed by laminating about m to 1.0 μm. Metal layer 151
Is formed so as to cover the bank 110 across all the pixels so as to function as a common electrode facing the transparent electrode 141.
【００２２】上記のような層構造を有する有機ＥＬ素子
において、透明電極１４１と金属層１５１との間に電圧
が印加された画素領域では、発光層１３１に電流が流
れ、エレクトロルミネッセンス現象を生じ、透明電極１
４１および駆動基板１００を通して光が射出されるよう
になっている。In the organic EL device having the above-described layer structure, in a pixel region where a voltage is applied between the transparent electrode 141 and the metal layer 151, a current flows through the light emitting layer 131, causing an electroluminescence phenomenon. Transparent electrode 1
Light is emitted through 41 and the drive substrate 100.
【００２３】（製造方法）次に、本有機ＥＬ素子の製造
方法を、図４および図５の製造工程断面図を参照して説
明する。バンク形成工程（図４（ａ）〜（ｆ））： バ
ンク形成工程は、駆動基板１００のバンク形成面に親和
性バンク層１１１、１１２および非親和性バンク層１２
１を積層してバンク１１０を形成する工程である。(Manufacturing Method) Next, a method of manufacturing the present organic EL device will be described with reference to FIGS. Bank forming step (FIGS. 4A to 4F): The bank forming step includes forming the affinity bank layers 111 and 112 and the non-affinity bank layer 12 on the bank formation surface of the driving substrate 100.
This is a step of forming the bank 110 by laminating 1.
【００２４】予め公知の半導体プロセスなどによって駆
動基板１００を製造しておく。駆動基板１００のパター
ン形成面には透明電極１４１を画素領域ごとに形成して
おく。すなわち、スパッタ法または塗布法によってＩＴ
Ｏ等の透明電極材料を上記した厚みに成膜し、フォトリ
ソグラフィ法により画素領域を覆う形状に形成する。The driving substrate 100 is manufactured in advance by a known semiconductor process or the like. A transparent electrode 141 is formed on the pattern formation surface of the drive substrate 100 for each pixel region. In other words, the IT
A transparent electrode material such as O is formed into a film having the above-described thickness, and is formed in a shape covering the pixel region by a photolithography method.
【００２５】次いでフォトリソグラフィ法およびそれに
準ずる方法により、各バンク層を積層していく。まず親
和性バンク層１１１を駆動基板１００の一面に塗布する
（図４（ａ））。親和性バンク層１１１として酸化シリ
コン、窒化シリコン、ポリシリコン、アモルファスシリ
コン等の無機化合物材料を利用する場合にはスパッタ法
やＣＶＤ法によって形成する。また親和性バンク層とし
て酸化シリコンや有機化合物材料を使用する場合には各
種塗布法（スピンコート、スプレーコード、ロールコー
ト、ダイコート、ディップコート）によって形成可能で
ある。親和性バンク層１１１を形成する厚みは、薄膜層
１３１に設定する厚みに合わせておく。Next, each bank layer is laminated by a photolithography method and a method similar thereto. First, the affinity bank layer 111 is applied to one surface of the drive substrate 100 (FIG. 4A). When an inorganic compound material such as silicon oxide, silicon nitride, polysilicon, amorphous silicon, or the like is used for the affinity bank layer 111, the affinity bank layer 111 is formed by a sputtering method or a CVD method. When silicon oxide or an organic compound material is used as the affinity bank layer, it can be formed by various coating methods (spin coating, spray code, roll coating, die coating, dip coating). The thickness for forming the affinity bank layer 111 is adjusted to the thickness set for the thin film layer 131.
【００２６】次いでバンク形状に合わせて非親和性バン
ク層１２１を形成する（図４（ｂ））。すなわちポリイ
ミド等の有機化合物は一般にフォトレジスト材料として
も利用されているが、このような有機化合物を非親和性
バンク層１２１とした場合には、非親和性バンク層その
ものがレジストとして機能する。非親和性バンク層の形
成時に、下層の親和性バンク層１１１の溶剤が除去され
ていなくてもよい。非親和性バンク層の形成過程で両バ
ンク層が混濁することなく親和性バンク層から溶剤を除
去させることが可能だからである。非親和性バンク層を
組成する有機化合物をポジ型のフォトレジストとして作
用しうる材料に選択する場合には、バンクの領域を覆う
形状のマスクを施して露光する。非親和性バンク層を組
成する有機化合物をネガ型のフォトレジストとして作用
しうる材料に選択する場合には、バンクの領域に光が当
たるようにマスクを施して露光する。露光には、有機化
合物に一定のエネルギーを印加可能なエネルギー源を用
いる。例えばエキシマレーザ等の短波長のレーザ光やＵ
Ｖ光を照射する。次いでこのフォトレジスト、すなわち
非親和性バンク層１２１を現像して不要な部分の層を除
去する。Next, an incompatible bank layer 121 is formed according to the bank shape (FIG. 4B). That is, an organic compound such as polyimide is generally used also as a photoresist material, but when such an organic compound is used as the non-affinity bank layer 121, the non-affinity bank layer itself functions as a resist. When forming the non-affinity bank layer, the solvent of the lower affinity bank layer 111 may not be removed. This is because it is possible to remove the solvent from the affinity bank layer without turbidity of both bank layers in the process of forming the non-affinity bank layer. When an organic compound constituting the non-affinity bank layer is selected as a material capable of acting as a positive photoresist, exposure is performed by applying a mask having a shape covering a bank region. When the organic compound constituting the non-affinity bank layer is selected as a material capable of acting as a negative photoresist, exposure is performed by applying a mask so that light is applied to a region of the bank. For the exposure, an energy source capable of applying constant energy to the organic compound is used. For example, short wavelength laser light such as an excimer laser or U
Irradiate V light. Next, the photoresist, that is, the incompatible bank layer 121 is developed to remove unnecessary layers.
【００２７】次いでこの非親和性バンク層１２１をレジ
ストとして親和性バンク層１１１をエッチングする（図
４（ｃ））。エッチングには公知のドライエッチングま
たはウェットエッチングのいずれも適用可能である。Next, the affinity bank layer 111 is etched using the non-affinity bank layer 121 as a resist (FIG. 4C). Either known dry etching or wet etching can be applied to the etching.
【００２８】次いで再度図４（ａ）と同様の方法で、バ
ンクを含めた全面に親和性バンク層１１２を形成する
（図４（ｄ））。詳細な方法は上記と同様である。ただ
し必ずしも親和性バンク層１１２の組成を既に形成して
ある親和性バンク層１１１の組成と同じにする必要はな
く、親和性バンク層１１２の高さに形成する金属層１５
１の薄膜材料液に対する親和性の程度やエッチング条件
に応じて材料を変更することが可能である。Next, the affinity bank layer 112 is formed again on the entire surface including the bank in the same manner as in FIG. 4A (FIG. 4D). The detailed method is the same as described above. However, the composition of the affinity bank layer 112 does not necessarily have to be the same as the composition of the affinity bank layer 111 that has already been formed.
The material can be changed according to the degree of affinity for the thin film material liquid and etching conditions.
【００２９】次いで親和性バンク層１１２を形成するた
めにフォトレジストを施す（図４（ｅ））。このフォト
レジストはバンクを形成するものではないが、非親和性
バンク層１２１と同等の材料を用いることもできる。も
ちろん市販のフォトレジスト材料、例えば環化イソプレ
ンゴム、ビスアジド、フェノール樹脂、塩素化ポリスチ
レン、ノボラック樹脂、キノンジアジド、ＰＭＭＡ、Ｐ
ＭＰＫ等を使用可能である。図４（ｅ）にはポジ型のフ
ォトレジストを使用して露光・現像した後のレジスト１
４１が示されている。Next, a photoresist is applied to form the affinity bank layer 112 (FIG. 4E). This photoresist does not form a bank, but a material equivalent to the non-affinity bank layer 121 may be used. Of course, commercially available photoresist materials such as cyclized isoprene rubber, bisazide, phenolic resin, chlorinated polystyrene, novolak resin, quinonediazide, PMMA, P
MPK or the like can be used. FIG. 4E shows a resist 1 after exposure and development using a positive photoresist.
41 is shown.
【００３０】最後に上記フォトレジスト１４１上から上
記と同様にドライエッチングまたはウェットエッチング
を行って、親和性バンク層１１２をバンクの最上層とし
て形成する（図４（ｆ））。Finally, dry etching or wet etching is performed on the photoresist 141 in the same manner as above to form the affinity bank layer 112 as the uppermost layer of the bank (FIG. 4F).
【００３１】以上の工程によって、三層からなるバンク
１１０が形成される。バンク１１０で囲まれる凹部１０
１が画素領域となる。バンク１１０が形成できれば、あ
とはインクジェット方式によって薄膜材料液を充填可能
な装置を使用して発光層１３１を形成することになる。Through the above steps, a three-layer bank 110 is formed. Recess 10 surrounded by bank 110
1 is a pixel area. After the bank 110 can be formed, the light emitting layer 131 is formed by using an apparatus capable of filling a thin film material liquid by an ink jet method.
【００３２】薄膜形成工程（図５）： 薄膜形成工程は
バンク１１０で囲まれた凹部１０１に薄膜材料液を順次
充填して薄膜層を積層していく工程である。薄膜材料液
１３０としては、上記したように電流により発光する有
機半導体材料を使用する。各薄膜材料液１３０を充填す
る量は、当該発光層１３０に対応する位置に形成されて
いる層、すなわち親和性バンク層１１１の厚みと同様に
なるように調整する。つまり加熱処理により溶媒成分を
蒸発させた際に、蒸発した後に形成される発光層の表面
が親和性バンク層１１１と非親和性バンク層１２１との
境界と同じ高さになるような量に調整する。Thin Film Forming Step (FIG. 5): The thin film forming step is a step of sequentially filling a concave portion 101 surrounded by the bank 110 with a thin film material liquid and stacking thin film layers. As the thin film material liquid 130, an organic semiconductor material that emits light by current as described above is used. The filling amount of each thin film material liquid 130 is adjusted to be the same as the thickness of the layer formed at the position corresponding to the light emitting layer 130, that is, the thickness of the affinity bank layer 111. That is, when the solvent component is evaporated by the heat treatment, the amount is adjusted so that the surface of the light emitting layer formed after the evaporation becomes the same height as the boundary between the affinity bank layer 111 and the non-affinity bank layer 121. I do.
【００３３】薄膜材料液１３０を充填する方法としては
液相材料を一定量充填可能な方法であれば種々に適用で
きるが、インクジェット方式によることが好ましい。イ
ンクジェット方式によれば任意の位置に任意の量で流動
体を充填することができ、家庭用プリンタに使用される
ような小型の装置で充填が可能だからである。さて、イ
ンクジェット式記録ヘッド１０２等を使用して薄膜材料
液１３０を凹部１０１に充填したら、加熱して溶媒成分
を除去する。インクジェット式記録ヘッド１０２から吐
出させるには通常粘度が１〜２０ｃｐ程度であることを
要する。このため最終的な必要な薄膜層の厚みに比べて
多くの薄膜材料液を充填する。吐出直後では、薄膜材料
液は最終的な厚みより上に配置されている非親和性バン
ク層１２１や親和性バンク層１１２と接している。加熱
処理により溶媒成分が蒸発し体積が減少するに連れて、
薄膜材料液はバンク１１０の側面に液面が引かれながら
もその液面を下げてくる。この液面が非親和性バンク層
１２１にかかると薄膜材料液がはじかれるため、薄膜材
料液と壁面との接触点が最下段の親和性バンク層１１１
と非親和性バンク層１２１との境界に移る（図５の破
線）。薄膜材料液の充填量は、加熱処理後における薄膜
材料液の体積が、最下段の親和性バンク層１１１と非親
和性バンク層１２１との境界までの嵩と略等しく設定さ
れている。このため、親和性バンク層１１１と非親和性
バンク層１２１との境界まで液面が移動した後は、それ
以上液面が下がることがない。体積減少により薄膜材料
液の中央部の厚みが徐々に下がり、バンク側面との接触
部分から中央部までの総ての部分おいて等しい厚みにな
った段階で、発光層１３１が固形化する。As a method for filling the thin film material liquid 130, various methods can be applied as long as a certain amount of liquid phase material can be filled, but an ink jet method is preferable. According to the ink jet method, an arbitrary position can be filled with an arbitrary amount of the fluid, and the filling can be performed by a small device used in a home printer. When the concave portion 101 is filled with the thin film material liquid 130 by using the ink jet recording head 102 or the like, the solvent component is removed by heating. In order to eject the ink from the ink jet recording head 102, it is generally required that the viscosity be about 1 to 20 cp. For this reason, more thin film material liquids are filled than the final required thickness of the thin film layer. Immediately after the ejection, the thin film material liquid is in contact with the non-affinity bank layer 121 and the affinity bank layer 112 arranged above the final thickness. As the heat treatment evaporates the solvent component and reduces the volume,
The thin film material liquid lowers while the liquid level is drawn on the side surface of the bank 110. When the liquid surface is applied to the non-affinity bank layer 121, the thin film material liquid is repelled, and the contact point between the thin film material liquid and the wall surface is changed to the lowest affinity bank layer 111.
And the boundary with the non-affinity bank layer 121 (broken line in FIG. 5). The filling amount of the thin film material liquid is set so that the volume of the thin film material liquid after the heat treatment is substantially equal to the bulk up to the boundary between the lowermost affinity bank layer 111 and the lower affinity bank layer 121. For this reason, after the liquid surface moves to the boundary between the affinity bank layer 111 and the non-affinity bank layer 121, the liquid surface does not lower any more. Due to the decrease in volume, the thickness of the central part of the thin film material liquid gradually decreases, and the light emitting layer 131 is solidified at the stage where the thickness becomes equal in all parts from the contact part with the bank side surface to the central part.
【００３４】なおインクジェット方式としてはピエゾジ
ェット方式でも熱による気泡発生による吐出する方法で
あってもよい。ピエゾジェット方式では圧力室にノズル
と圧電体素子とが備えられて構成されている。圧力室に
流動体が充填されている圧電体素子に電圧を印加すると
圧力室に体積変化が生じノズルから流動体の液滴が吐出
される。気泡発生により吐出する方式では、ノズルに通
ずる圧力室に発熱体が設けられている。発熱体を発熱さ
せてノズル近辺の流動体を沸騰させ気泡を発生させてそ
の体積膨張により流動体を吐出するものである。加熱に
よる流動体の変質が無い点でピエゾジェット方式が好ま
しい。The ink jet method may be a piezo jet method or a method of discharging by generating bubbles by heat. In the piezo jet system, a pressure chamber is provided with a nozzle and a piezoelectric element. When a voltage is applied to the piezoelectric element in which the fluid is filled in the pressure chamber, a volume change occurs in the pressure chamber, and a droplet of the fluid is discharged from the nozzle. In the method of discharging by the generation of air bubbles, a heating element is provided in a pressure chamber communicating with a nozzle. The heating element generates heat to boil the fluid near the nozzle to generate bubbles, and the fluid is discharged by volume expansion. The piezo jet method is preferable because the fluid does not deteriorate due to heating.
【００３５】最後に、スパッタ法や蒸着法等を用いてバ
ンク１１０を覆う全面に金属層１５１を形成する（図１
参照）。バンク層１１０の最上層は、親和性バンク層１
１２で形成されるので、スパッタ法や蒸着法で形成した
金属層との密着がよい。また金属層の形成は、広範囲に
わたってほぼ均一な厚みで金属薄膜を形成可能な方法で
あれば、ロールコート法、スピンコート法、スプレー法
等の塗布法も適用可能である。このときバンク１１０の
最上層は金属層１５１の材料液に濡れやすい親和性バン
ク層１１２で形成されるので、どのような方法で金属層
１５１を形成しても金属層の材料液がバンク１１０では
じかれて画素領域ごとに分離するといった事態が生ずる
ことが防止される。Finally, a metal layer 151 is formed on the entire surface covering the bank 110 by using a sputtering method, an evaporation method, or the like.
reference). The top layer of the bank layer 110 is the affinity bank layer 1
Since it is formed by the method 12, adhesion with a metal layer formed by a sputtering method or an evaporation method is good. For forming the metal layer, a coating method such as a roll coating method, a spin coating method and a spraying method can be applied as long as a metal thin film can be formed with a substantially uniform thickness over a wide range. At this time, since the uppermost layer of the bank 110 is formed of the affinity bank layer 112 which is easily wetted by the material liquid of the metal layer 151, the material liquid of the metal layer is not changed in the bank 110 regardless of the method of forming the metal layer 151. It is possible to prevent a situation in which the image is separated for each pixel region due to being fogged.
【００３６】（バンク構造の変形）本実施形態１におい
て、バンクの層構造や薄膜層の層構造は任意に変更可能
である。図２に、図１におけるバンク１１０の変形例を
示す。この変形例に係るバンク１１０ｂは、図２に示す
ように、下層から非親和性バンク層１２１，親和性バン
ク層１１１，非親和性バンク層１２２および親和性バン
ク層１１２を備えて構成されている。このバンク１１０
ｂの層構造は、最下層にさらに非親和性バンク層１２１
が設けられている点で図１のバンク１１０と異なる。こ
の層構造は、例えば駆動基板１００や透明電極１４１と
の密着性が、親和性バンク層よりも非親和性バンク層の
方が高い場合などに適用可能である。発光層などの薄膜
層の厚みは、親和性バンク層とその直上の非親和性バン
ク層との境界の高さで決まるので、親和性バンク層の下
に非親和性バンク層が存在しても薄膜層に影響は与えな
い。(Modification of Bank Structure) In the first embodiment, the layer structure of the bank and the layer structure of the thin film layer can be arbitrarily changed. FIG. 2 shows a modification of the bank 110 in FIG. As shown in FIG. 2, a bank 110b according to this modification includes a non-affinity bank layer 121, an affinity bank layer 111, a non-affinity bank layer 122, and an affinity bank layer 112 from below. . This bank 110
The layer structure of “b” further includes a non-affinity bank layer 121 in the lowermost layer.
Is different from the bank 110 of FIG. This layer structure is applicable, for example, when the adhesion to the driving substrate 100 or the transparent electrode 141 is higher in the non-affinity bank layer than in the affinity bank layer. The thickness of the thin film layer such as the light-emitting layer is determined by the height of the boundary between the affinity bank layer and the non-affinity bank layer immediately above it. It does not affect the thin film layer.
【００３７】図３に、図１におけるバンク１１０の他の
変形例を示す。この変形例に係るバンク１１０ｃは、図
３に示すように、下層から親和性バンク層１１１、非親
和性バンク層１２１，親和性バンク層１１２、非親和性
バンク層１２２、親和性バンク層１１３の各層で構成さ
れている。親和性バンク層と非親和性バンク層の組が多
い点で図１のバンク１１０と異なる。また薄膜層として
透明電極層１４１および発光層１３１を備えている。透
明電極層１３１は、透明電極の元となる薄膜材料液を凹
部１０１に充填することにより、発光層１３１と同様の
方法で製造されるものである。したがって透明電極１４
１はバンク１１０ｃの形成後に形成される。このように
親和性バンク層と非親和性バンク層の組を増やすたび
に、薄膜層を１層増やすことができる。このことから、
バンクの層構造を変更することにより、複数の薄膜層を
備えた機能性薄膜デバイスを提供することが可能とな
る。例えば機能性薄膜デバイスが有機ＥＬ素子である場
合には、発光層と電極層の間に、発光効率向上のために
正孔輸送層や電子輸送層を設けることがあり、親和性バ
ンク層と非親和性バンク層の組を増やすことにより、複
数の薄膜層を均一な膜厚で形成できる。FIG. 3 shows another modification of the bank 110 in FIG. As shown in FIG. 3, a bank 110c according to this modification includes an affinity bank layer 111, an affinity bank layer 121, an affinity bank layer 112, an affinity bank layer 122, and an affinity bank layer 113 from below. It is composed of each layer. It differs from the bank 110 of FIG. 1 in that there are many sets of affinity bank layers and non-affinity bank layers. Further, a transparent electrode layer 141 and a light emitting layer 131 are provided as thin film layers. The transparent electrode layer 131 is manufactured in the same manner as the light emitting layer 131 by filling the concave portion 101 with a thin film material liquid that is a source of the transparent electrode. Therefore, the transparent electrode 14
1 is formed after the formation of the bank 110c. Thus, each time the number of pairs of the affinity bank layer and the non-affinity bank layer is increased, the number of thin film layers can be increased by one. From this,
By changing the layer structure of the bank, it is possible to provide a functional thin film device having a plurality of thin film layers. For example, when the functional thin film device is an organic EL element, a hole transport layer or an electron transport layer may be provided between the light emitting layer and the electrode layer to improve luminous efficiency. By increasing the set of affinity bank layers, a plurality of thin film layers can be formed with a uniform thickness.
【００３８】さらに本実施形態のバンク層はその層構造
を変更可能である。例えば機能性薄膜デバイス全面に金
属層のような共通層を設ける必要がない場合には、最上
部のバンク層を非親和性バンク層にすることが可能であ
る。最上層が非親和性バンク層であれば、一つの凹部に
多量に薄膜材料液を充填しても隣接する凹部へバンクを
越えて薄膜材料液が流出することを防止できるからであ
る。Further, the layer structure of the bank layer of the present embodiment can be changed. For example, if it is not necessary to provide a common layer such as a metal layer on the entire surface of the functional thin film device, the uppermost bank layer can be an incompatible bank layer. If the uppermost layer is a non-affinity bank layer, even if one concave portion is filled with a large amount of the thin film material liquid, it is possible to prevent the thin film material liquid from flowing into the adjacent concave portion over the bank.
【００３９】上記したように本実施形態１によれば、バ
ンクとして親和性バンク層と非親和性バンク層とを交互
に備えているので、液相の薄膜材料液から形成される薄
膜層を平坦に形成することができる。これにより明るさ
や色にむらが生じない画像表示が可能で信頼性の高い有
機ＥＬ素子を提供可能である。As described above, according to the first embodiment, since the affinity bank layers and the non-affinity bank layers are alternately provided as the banks, the thin film layer formed from the liquid thin film material liquid is flattened. Can be formed. This makes it possible to provide an organic EL element which can display an image without causing unevenness in brightness and color and has high reliability.
【００４０】（実施形態２）本発明の実施形態２は、本
発明の機能性薄膜デバイスの構造を備えたカラーフィル
タに関する。図６に本実施形態のカラーフィルタの積層
構造断面図を示す。本カラーフィルタは、図６に示すよ
うに、透明基板２００，バンク２１０、着色樹脂層２３
１〜２３３および保護膜２４１を備えいている。(Embodiment 2) Embodiment 2 of the present invention relates to a color filter having the structure of the functional thin film device of the present invention. FIG. 6 shows a cross-sectional view of the layered structure of the color filter of the present embodiment. As shown in FIG. 6, the present color filter includes a transparent substrate 200, a bank 210, and a colored resin layer 23.
1 to 233 and a protective film 241.
【００４１】透明基板２００は、光を透過可能で一定の
機械的強度を備えた平板であり、例えばガラスや石英に
より構成されている。透明基板２００は液晶パネルに貼
り合わせることが可能に構成されている。液晶パネルは
図示しないが、ガラス等の透明基板二枚の間に透明電極
を介して液晶材料が封入されて構成されている。そして
透明電極に電圧を印加することより電界を液晶分子に印
加可能に構成されている。液晶パネルとしては公知の構
造を備えていれば十分である。The transparent substrate 200 is a flat plate capable of transmitting light and having a certain mechanical strength, and is made of, for example, glass or quartz. The transparent substrate 200 is configured to be able to be bonded to a liquid crystal panel. Although not shown, a liquid crystal panel is formed by sealing a liquid crystal material between two transparent substrates such as glass via a transparent electrode. An electric field can be applied to the liquid crystal molecules by applying a voltage to the transparent electrode. It is sufficient for the liquid crystal panel to have a known structure.
【００４２】バンク２１０は、画素領域２０１を取り囲
むように平面図上で格子状またはストライプ状に形成さ
れている。バンク２１０は、下層から親和性バンク層２
１１，非親和性バンク層２２１および親和性バンク層２
１２を順に積層して構成されている。親和性バンク層２
１１、２１２は、上記実施形態１と同じく無機化合物ま
たは有機化合物によってそれぞれ構成されている。具体
的には、Ａｌ、Ｔａ等の金属、酸化シリコン、窒化シリ
コン、アモルファスシリコン、ポリシリコン、ポリイミ
ドまたはフッ素化合物のうちいずれか二種から選択され
る。非親和性バンク層２２１は、上記無機化合物または
有機化合物で構成するが、光透過性の低い材料、例えば
種々の金属、クロム化合物やカーボン含有の有機化合物
等の遮光性材料で構成することが好ましい。すなわちい
わゆるブラックマトリクスとして形成する。ただし遮光
性材料は最上層である親和性バンク層に混ぜてもよい。
親和性バンク層と非親和性バンク層の接触角について
は、上記実施形態１と同様である。また、親和性バンク
層２１１の厚み、すなわち親和性バンク層２１１および
非親和性バンク層２２１間の境界までの高さは、着色樹
脂層２３１〜２３３の厚みと等しくなるように調整され
ている。非親和性バンク層２２１の厚みは、薄膜材料液
を十分にはじき、薄膜材料液を上層の親和性バンク層２
１２から分離させるのに十分な厚みに形成する。また親
和性バンク層２１２の厚みは、保護層２５１の元となる
薄膜材料液を広がりやすくすれば十分であるため、塗布
法など、採用した製造方法によってほぼ均一に形成可能
な厚みがあればよい。The bank 210 is formed in a lattice or stripe shape in a plan view so as to surround the pixel region 201. The bank 210 is formed from the lower layer to the affinity bank layer 2.
11. Non-affinity bank layer 221 and affinity bank layer 2
12 are sequentially laminated. Affinity bank layer 2
11 and 212 are made of an inorganic compound or an organic compound, respectively, as in the first embodiment. Specifically, it is selected from any two of metals such as Al and Ta, silicon oxide, silicon nitride, amorphous silicon, polysilicon, polyimide, and fluorine compound. The non-affinity bank layer 221 is formed of the above-mentioned inorganic compound or organic compound, but is preferably formed of a material having low light transmittance, for example, a light-shielding material such as various metals, chromium compounds, and carbon-containing organic compounds. . That is, it is formed as a so-called black matrix. However, the light-shielding material may be mixed in the affinity bank layer which is the uppermost layer.
The contact angle between the affinity bank layer and the non-affinity bank layer is the same as in the first embodiment. The thickness of the affinity bank layer 211, that is, the height up to the boundary between the affinity bank layer 211 and the non-affinity bank layer 221 is adjusted to be equal to the thickness of the colored resin layers 231 to 233. The thickness of the non-affinity bank layer 221 is determined by sufficiently repelling the thin-film material liquid and transferring the thin-film material liquid to the upper affinity bank layer 2.
12 is formed to a thickness sufficient to be separated from the substrate 12. Further, the thickness of the affinity bank layer 212 is sufficient if it is easy to spread the thin film material liquid that is the base of the protective layer 251. Therefore, it is sufficient that the affinity bank layer 212 has a thickness that can be formed substantially uniformly by an adopted manufacturing method such as a coating method. .
【００４３】着色樹脂層２３１（赤）、２３２（緑）、
２３３（青）は、薄膜材料液として着色樹脂を凹部２０
１に充填して形成されている。いずれの着色樹脂層も光
透過性を有し、液晶パネルから透明基板２００を介して
射出された光のうち特定の波長の光を透過可能に構成さ
れている。すなわち、着色樹脂層２３１は赤色、着色樹
脂層２３２は緑色、着色樹脂層２３３は青色の光を透過
する。The colored resin layers 231 (red), 232 (green),
233 (blue) indicates that the colored resin is used as the thin film material liquid in the concave portions 20.
1 is formed. Each of the colored resin layers has a light transmitting property, and is configured to be able to transmit light of a specific wavelength among light emitted from the liquid crystal panel through the transparent substrate 200. That is, the colored resin layer 231 transmits red light, the colored resin layer 232 transmits green light, and the colored resin layer 233 transmits blue light.
【００４４】上記カラーフィルタの製造方法は、上記実
施形態１の製造方法に準ずる。すなわち、バンク２１０
は複数のバンク層をフォトリソグラフィ法等で積層して
いくことで製造される。膜形成は、無機化合物膜の場合
にはスパッタ法、ＣＶＤ法または塗布法、有機化合物膜
の場合には塗布法を使用する。着色樹脂層２３１〜２３
３は、インクジェット方式等を用いて着色染料または顔
料を溶媒中に溶解または分散させた薄膜材料液を各凹部
２０１に充填して溶媒成分を蒸発させて形成する。充填
量の考え方は上記実施形態１と同様である。最後に、保
護層または透明導電層２４１をカラーフィルタ全面にわ
たって形成する。形成方法は、広範囲な面積にわたって
ほぼ均一な厚みの膜を形成可能な塗布法などを利用す
る。The method of manufacturing the color filter is in accordance with the method of the first embodiment. That is, the bank 210
Is manufactured by laminating a plurality of bank layers by a photolithography method or the like. For the film formation, a sputtering method, a CVD method or a coating method is used for an inorganic compound film, and a coating method is used for an organic compound film. Colored resin layers 231 to 23
3 is formed by filling each concave portion 201 with a thin film material liquid in which a coloring dye or pigment is dissolved or dispersed in a solvent by using an ink jet method or the like, and evaporating the solvent component. The concept of the filling amount is the same as in the first embodiment. Finally, a protective layer or a transparent conductive layer 241 is formed over the entire surface of the color filter. As a forming method, a coating method capable of forming a film having a substantially uniform thickness over a wide area is used.
【００４５】なお、上記実施形態１の変形例と同様に、
本実施形態のバンク２１０も層構造を種々に変更可能で
ある。例えば、図７に示すように、最下層を非親和性バ
ンク層２２１で形成したバンク２１０ｂとしてもよい。
また、バンク２１０を親和性バンク層と非親和性バンク
層の多層構造にして、着色樹脂層の他の薄膜層を設けて
もよい。さらに保護層または透明導電層２４１を設けな
いならば、バンク２１０の最上層を非親和性バンク層で
構成してもよい。As in the modification of the first embodiment,
The bank 210 of the present embodiment can also have various layer structures. For example, as shown in FIG. 7, the lowermost layer may be a bank 210b formed of the incompatible bank layer 221.
Further, the bank 210 may have a multilayer structure of an affinity bank layer and a non-affinity bank layer, and another thin film layer other than the colored resin layer may be provided. If the protective layer or the transparent conductive layer 241 is not provided, the uppermost layer of the bank 210 may be constituted by a non-affinity bank layer.
【００４６】上記したように本実施形態２によれば、仕
切部材が親和性バンク層と非親和性バンク層とにより構
成されているので、着色樹脂層を均一な厚みで形成する
ことが可能である。このため明るさや色にむらが生じな
い画像表示を行うことができる。またバンク中に遮光性
材料で形成された層を備えているので、画素領域ごとに
光を分離し視認性をよくすることが可能である。As described above, according to the second embodiment, since the partition member is constituted by the affinity bank layer and the non-affinity bank layer, the colored resin layer can be formed with a uniform thickness. is there. For this reason, it is possible to perform image display without causing unevenness in brightness and color. In addition, since the bank is provided with a layer formed of a light-shielding material, light can be separated for each pixel region and visibility can be improved.
【００４７】（その他の変形例）本発明は上記実施形態
に限定されることはなく、本発明の趣旨の範囲で種々に
変更して適用することが可能である。例えば上記実施形
態では機能性薄膜デバイスとして有機ＥＬ素子やカラー
フィルタを例示したが、均一な厚みで積層された薄膜層
を備えるデバイスであれば、他のデバイスにも適用可能
である。光学的な装置のみならず半導体装置その他の装
置に適用可能である。(Other Modifications) The present invention is not limited to the above-described embodiment, but can be variously modified and applied within the scope of the present invention. For example, in the above-described embodiment, an organic EL element and a color filter are exemplified as the functional thin film device. However, the present invention can be applied to other devices as long as the device includes a thin film layer laminated with a uniform thickness. The present invention is applicable not only to optical devices but also to semiconductor devices and other devices.
【００４８】また、親和性バンク層や非親和性バンク層
の組成およびそれらの製造方法は上記によらず種々に変
形可能である。本発明の主旨は親和性の程度の異なる層
を交互に配置することにより薄膜層を均一な膜厚で形成
する点にある。例えば親和性を示したり非親和性を示し
たりするバンク材料を使用する他、親和性の程度を問わ
ず厚膜化の観点から採用した材料によりバンクを形成し
て、バンクの側面や上面の親和性を調整する表面処理を
行ったり、親和性の程度が調整された材料を塗布して親
和性バンク層と非親和性バンク層を形成してもよい。表
面処理による親和性の調整方法としては、例えばフッ素
を含むガスによるプラズマで表面処理することにより、
無機材料と有機材料とで親和性の程度を調整可能であ
る。また材料の塗布による親和性の調整方法としては、
例えば、ジエチレングリコールメチルエチルエーテル
（Ｃ２Ｈ５ＯＣＨ２ＣＨ２ＣＨ２ＯＣＨ２ＣＨ２ＯＣＨ
３）や２−パーフルオロオクチルエチルアクリレート
（ＦＣＦ２）８ＣＨ２ＣＨ２ＯＯＯＣＨ＝ＣＨ２）を塗
布することが挙げられる。これらの材料は、それ自体で
極性基分子を有する薄膜材料液に対して非親和性を示
す。Further, the composition of the affinity bank layer and the non-affinity bank layer and the manufacturing method thereof can be variously modified in addition to the above. The gist of the present invention is to form a thin film layer with a uniform thickness by alternately arranging layers having different degrees of affinity. For example, in addition to using a bank material that shows affinity or non-affinity, a bank is formed from a material adopted from the viewpoint of increasing the film thickness regardless of the degree of affinity, and the affinity of the side and top surfaces of the bank is adjusted. The affinity bank layer and the non-affinity bank layer may be formed by performing a surface treatment for adjusting the affinity or applying a material having an adjusted affinity. As a method of adjusting the affinity by the surface treatment, for example, by performing a surface treatment with plasma using a gas containing fluorine,
The degree of affinity between the inorganic material and the organic material can be adjusted. Also, as a method of adjusting the affinity by applying the material,
For example, diethylene glycol methyl ethyl ether (C 2 H 5 OCH 2 CH 2 CH 2 OCH 2 CH 2 OCH
3) and 2-perfluorooctyl ethyl acrylate (FCF 2) 8 CH 2 CH 2 OOOCH = CH 2) it can be mentioned applying a. These materials exhibit non-affinity for a thin film material liquid having polar group molecules by itself.
【００４９】[0049]
【発明の効果】本発明によれば、親和性の程度の異なる
領域を備えたバンクを備えたので、均一な厚みで積層さ
れた薄膜層を備えた機能性薄膜デバイスを提供すること
が可能である。このため機能性薄膜デバイスが有機ＥＬ
素子やカラーフィルタである場合には、明るさや色にむ
らが生じない画像表示が可能でデバイスの信頼性を高め
ることができる。According to the present invention, since a bank having regions having different degrees of affinity is provided, it is possible to provide a functional thin film device having thin film layers stacked with a uniform thickness. is there. For this reason, the functional thin film device is
In the case of an element or a color filter, it is possible to display an image without causing unevenness in brightness and color, and to increase the reliability of the device.
【図１】本発明の実施形態１に係る機能性薄膜デバイス
（有機ＥＬ素子）の層構造断面図である。FIG. 1 is a sectional view of a layer structure of a functional thin film device (organic EL element) according to Embodiment 1 of the present invention.
【図２】本発明の実施形態１に係る機能性薄膜デバイス
の変形例を示す図である。FIG. 2 is a view showing a modified example of the functional thin film device according to the first embodiment of the present invention.
【図３】本発明の実施形態１に係る機能性薄膜デバイス
の他の変形例を示す図である。FIG. 3 is a diagram showing another modified example of the functional thin film device according to the first embodiment of the present invention.
【図４】本発明の実施形態１に係る有機ＥＬ素子の製造
工程断面図である。FIG. 4 is a cross-sectional view illustrating a manufacturing step of the organic EL element according to the first embodiment of the present invention.
【図５】本発明の実施形態１に係る有機ＥＬ素子の製造
工程断面図（続き）である。FIG. 5 is a sectional view (continued) of the manufacturing process of the organic EL device according to the first embodiment of the present invention.
【図６】本発明の実施形態２に係る機能性薄膜デバイス
（カラーフィルタ）の積層構造断面図である。FIG. 6 is a sectional view of a laminated structure of a functional thin film device (color filter) according to Embodiment 2 of the present invention.
【図７】本発明の実施形態２に係る機能性薄膜デバイス
の変形例を示す図である。FIG. 7 is a view showing a modified example of the functional thin film device according to Embodiment 2 of the present invention.
【図８】従来のバンク形成における問題点の説明図であ
る。FIG. 8 is an explanatory diagram of a problem in the conventional bank formation.
１００…駆動基板 ２００…透明基板 １０１、２０１…凹部 １１０、２１０…バンク １１１、１１２、１１３、２１１，２１２…親和性バン
ク層 １２１、１２２、２２１，２２２…非親和性バンク層 １３０…薄膜材料液 １３１、１３２、２３１〜２３３…薄膜層（発光層、透
明電極層、着色樹脂層） １０２ インクジェット式記録ヘッド100: Drive substrate 200: Transparent substrate 101, 201 ... Depression 110, 210 ... Bank 111, 112, 113, 211, 212 ... Affinity bank layer 121, 122, 221, 222 ... Non-affinity bank layer 130: Thin film material liquid 131, 132, 231-233 ... thin-film layer (light-emitting layer, transparent electrode layer, colored resin layer) 102 inkjet recording head
Claims (14)
１層以上の薄膜層が積層された薄膜構造を備える機能性
薄膜デバイスであって、 前記バンクは、前記薄膜層の液相材料である薄膜材料液
に対し親和性を示す親和性バンク層と当該薄膜材料液に
対し非親和性を示す非親和性バンク層とが交互に積層さ
れて構成され、 前記薄膜層は、前記親和性バンク層とその上に積層され
た前記非親和性バンク層との境界を含む平面がその界面
となるようにその厚みが調整されて形成されていること
を特徴とする機能性薄膜デバイス。1. A functional thin film device having a thin film structure in which one or more thin film layers are stacked in a region surrounded by a bank as a partition member, wherein the bank is a liquid phase material of the thin film layer. An affinity bank layer having an affinity for a certain thin film material liquid and a non-affinity bank layer having no affinity for the thin film material liquid are alternately laminated, and the thin film layer is formed of the affinity bank. A functional thin film device having a thickness adjusted so that a plane including a boundary between a layer and the non-affinity bank layer laminated thereon becomes the interface.
を備えている請求項１に記載の機能性薄膜デバイス。2. The functional thin-film device according to claim 1, wherein the bank has an affinity bank layer as a lowermost layer.
層を備えている請求項１に記載の機能性薄膜デバイス。3. The functional thin-film device according to claim 1, wherein the bank has a non-affinity bank layer as a lowermost layer.
を備えている請求項１に記載の機能性薄膜デバイス。4. The functional thin-film device according to claim 1, wherein the bank has an affinity bank layer on an uppermost layer.
を備えている請求項１に記載の機能性薄膜デバイス。5. The functional thin-film device according to claim 1, wherein the bank includes an opaque layer that does not transmit light.
に対する接触角が３０度以下である請求項１に記載の機
能性薄膜デバイス。6. The functional thin-film device according to claim 1, wherein the affinity bank layer has a contact angle with the thin-film material liquid of 30 degrees or less.
液に対する接触角が４０度以上である請求項１に記載の
機能性薄膜デバイス。7. The functional thin-film device according to claim 1, wherein the non-affinity bank layer has a contact angle with the thin-film material liquid of 40 degrees or more.
バンク層は、Ａｌ、Ｔａ等の金属、酸化シリコン、窒化
シリコン、アモルファスシリコン、ポリシリコン、ポリ
イミド、フッ素結合を有する有機化合物、フォトレジス
トのうちいずれか二種以上から構成される無機化合物ま
たは有機化合物である請求項１に記載の機能性薄膜デバ
イス。8. The affinity bank layer and the non-affinity bank layer are made of a metal such as Al or Ta, silicon oxide, silicon nitride, amorphous silicon, polysilicon, polyimide, an organic compound having a fluorine bond, or a photoresist. The functional thin film device according to claim 1, wherein the functional thin film device is an inorganic compound or an organic compound composed of any two or more of these.
含み、表示装置として機能可能に構成された請求項１に
記載の機能性薄膜デバイス。9. The functional thin-film device according to claim 1, wherein the thin-film layer includes a light-emitting layer exhibiting a light-emitting action, and is configured to function as a display device.
た金属層を前記薄膜層の最上層として備えている請求項
９に記載の機能性薄膜デバイス。10. The functional thin film device according to claim 9, further comprising a metal layer formed over a plurality of the regions as an uppermost layer of the thin film layer.
いる請求項９に記載の機能性薄膜デバイス。11. The functional thin-film device according to claim 9, wherein a transparent electrode is provided at the bottom of the region.
備えた透明電極層を備え、その上層に有機半導体材料で
形成される発光層を備えている請求項９に記載の機能性
薄膜デバイス。12. The functional thin film according to claim 9, wherein the plurality of thin film layers include a transparent electrode layer having conductivity as a lower layer, and a light emitting layer formed of an organic semiconductor material as an upper layer. device.
するための着色層を含み、カラーフィルタとして機能可
能に構成されている請求項１に記載の機能性薄膜デバイ
ス。13. The functional thin-film device according to claim 1, wherein the thin-film layer includes a coloring layer for giving a color to the pixel, and is configured to function as a color filter.
た透明樹脂層を前記薄膜層の最上層として備えている請
求項１３に記載の機能性薄膜デバイス。14. The functional thin film device according to claim 13, further comprising a transparent resin layer formed over a plurality of the regions as an uppermost layer of the thin film layer.
Priority Applications (1)
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|---|---|---|---|
| JP13394598A JP3951445B2 (en) | 1998-05-15 | 1998-05-15 | Organic EL element, display device, optical device, organic EL element manufacturing method, display device manufacturing method, and optical device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13394598A JP3951445B2 (en) | 1998-05-15 | 1998-05-15 | Organic EL element, display device, optical device, organic EL element manufacturing method, display device manufacturing method, and optical device manufacturing method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006006117A Division JP2006163432A (en) | 2006-01-13 | 2006-01-13 | Color filter, display device, optical apparatus, manufacturing method of color filter, manufacturing method of display device and manufacturing method of optical apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11329741A true JPH11329741A (en) | 1999-11-30 |
| JP3951445B2 JP3951445B2 (en) | 2007-08-01 |
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ID=15116750
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|---|---|---|---|
| JP13394598A Expired - Fee Related JP3951445B2 (en) | 1998-05-15 | 1998-05-15 | Organic EL element, display device, optical device, organic EL element manufacturing method, display device manufacturing method, and optical device manufacturing method |
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