JPH1064921A - Wafer heating device for semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten tact time at heating a wafer, to further miniaturize a device and to homogeneously heat multiple target substrates by providing facing- type panel heaters of multiple stages in a heater supporting frame set in a vacuum chamber while the substrate is supported. SOLUTION: A heater supporting frame is provided in a vacuum chamber 25, and a facing-type panel heater 40 of multiple stages is provided in the heater supporting frame, further, a supporting means 44 for supporting a wafer 23 to be processed is provided between each facing-type panel heater 40. For example, the heater supporting frame comprises two lower beams, a pair of side frames, and two upper beams, and at the upper end of the side frame, a reflection board 37 is so provided as to form a top board of the heater supporting frame. The facing-type panel heater 40 is molding-type resistor heating panel heater of aluminum, with a heater element wire being buried. In addition, a wafer guide pin is imbedded at four points of the upper surface of the facing- type panel heater 40, and a wafer receiver 44 is provided at the position corresponding to the upper end of each wafer guide pin in the side pillar of side frame.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heating apparatus for preheating a substrate in a semiconductor manufacturing process in which a semiconductor is manufactured by forming a thin film on a substrate surface, etching or the like.

[0002]

2. Description of the Related Art As a process prior to processing a substrate surface, there is a process of preheating a substrate to a processing temperature.

A conventional substrate heating apparatus will be described with reference to FIGS.

[0004] The vacuum chamber 1 comprises a container body 2 and an upper lid 3,
A heating lamp 5 is provided below the upper lid 3 via an insulating base 4, and a far-infrared radiation plate 10 is provided below the heating lamp 5. A cooling plate 7 is provided on a bottom surface of the container body 2 via a pedestal 6, a heating lamp 9 is provided on the cooling plate 7 via an insulating base 8, and a far-infrared radiation plate 11 is provided above the heating lamp 9. Is provided.

An elevating rod 12 penetrates the bottom surface of the container body 2, a bellows 13 is provided at a penetrating portion of the elevating rod 12, and the lower end is connected to an elevating cylinder (not shown). I have. A support pin base 14 is fixed to the upper end of the lifting rod 12. Four support pins 15 are erected on the support pin base 14, and the support pins 15 pass through the cooling plate 7 and the far infrared radiation plate 11 and protrude above the far infrared radiation plate 11.

[0006] A cooling water passage 17 is formed in the upper lid 3,
A supply / drain pipe 18 communicates with the cooling water passage 17 and the cooling plate 7
A cooling water passage 19 is formed in the cooling water passage 19, and a supply / discharge pipe 20 is communicated with the cooling water passage 19, and the supply / discharge pipe 18 and the supply / discharge pipe 20 are connected to a cooling source (not shown). Further, the heating lamp 5 and the heating lamp 9 are the upper lid 3 and the container body 2 respectively.
The power supply is connected to a power supply (not shown) via current introduction terminals 21 provided at the bottom portions in a gas-tight manner. In the drawing, reference numeral 22 denotes a substrate transfer port for loading and unloading the substrate 23 to be processed.

The substrate 23 loaded from the substrate transfer port 22 by a transfer arm (not shown) is transferred from the transfer arm to the support pins 15 by raising and lowering the support pin base 14 by a lift cylinder (not shown). . The substrate 23 is heated while being supported between the far-infrared radiation plate 10 and the far-infrared radiation plate 11.

The heating lamp 5 and the heating lamp 9 are energized to heat the far-infrared radiating plate 10 and the far-infrared radiating plate 11, and radiated heat from the far-infrared radiating plate 10 and the far-infrared radiating plate 11 The substrate 23 is heated. The heated substrate 23 is unloaded from the substrate transfer port 22 by a transfer arm (not shown).

[0009]

The heating time (tact time) of a substrate to be processed in a substrate heating apparatus also affects the productivity of a semiconductor manufacturing apparatus. The substrates are heated one by one, and a substrate heating time and a transport time for loading and unloading are required for each substrate to be processed, and the heating rate is set such that thermal distortion does not occur in the substrates. Therefore, there is a problem that it is not possible to greatly reduce the tact time required for one substrate to be processed.

There is a method in which a plurality of substrates to be processed are heated at the same time for the purpose of shortening the tact time. This substrate heating apparatus is disclosed in Japanese Patent Laid-Open No. 1-216522, and FIG.
As shown in FIG. 2, the substrate heating apparatus has a substrate 92 to be processed and a heating plate 93 alternately set up on a susceptor 91 inside a heating tank 90, and microwaves generated by a microwave generation source 94 are supplied to the heating tank 90. 90 into the heating plate 9
3, the heating plate 93 generates heat, and the substrate to be processed 92 is heated.

However, in the substrate heating apparatus shown in FIG. 12, it is difficult to control the heating state of each of the heat generating plates 93.
In addition, it is impossible to individually control and manage the temperature of the heat generating plate 93. Further, the state of microwave absorption differs depending on the position of the heat generating plate 93, and it is possible to cause each heat generating substrate to generate heat under the same condition. difficult. Therefore, the substrate heating apparatus has a problem that it is very difficult to uniformly heat a plurality of processing substrates.

The present invention has been made in view of the above circumstances, and has made it possible to significantly reduce the tact time in heating a substrate of a semiconductor manufacturing apparatus, to further reduce the size of the apparatus and to uniformly heat a plurality of substrates to be processed. Is what you do.

[0013]

According to the present invention, there is provided a heater supporting frame provided in a vacuum chamber, a plurality of facing panel heaters provided in the heater supporting frame, and a processing target between the facing panel heaters. The present invention relates to a substrate heating apparatus of a semiconductor manufacturing apparatus having a support means for supporting a substrate, and to a substrate heating apparatus of a semiconductor manufacturing apparatus having side panel heaters provided at both ends of the facing panel heater. And
Also, the center of the side surface of the facing panel heater is fixed to the heater support frame, heat insulating collars are provided at both end portions of the side surface of the facing panel heater, and the heat insulating collar is fitted in a groove cut in the heater support frame. A substrate guide which relates to a substrate heating device, and further includes a substrate support on one side of a substrate to be processed, which is capable of receiving the substrate to be processed, on a heater supporting frame side, and guides the other side of the substrate to be processed to a facing panel heater. The present invention relates to a substrate heating apparatus of a semiconductor manufacturing apparatus in which pins are implanted, and the panel heater relates to a substrate heating apparatus of a semiconductor manufacturing apparatus, which is an aluminum cast-in panel heater in which heater wires are embedded. In addition, the present invention relates to a substrate heating apparatus of a semiconductor manufacturing apparatus in which a plurality of panel heaters are individually temperature-controlled. One panel heater is divided into zones, and each zone is individually temperature-controlled. The side panel heater is a heating element, and the side panel heater is provided at least insulated to a side frame of a heater supporting frame, and the left and right side panel heaters are provided. The present invention relates to a substrate heating device of a semiconductor manufacturing apparatus in which a facing panel heater is provided to extend over a side panel heater, and the facing panel heater is heated by heat conduction to the side panel heater,
Further, the side panel heater has a heating zone divided vertically, the heating zone relates to a substrate heating device of a semiconductor manufacturing apparatus whose temperature is individually controlled, and the side panel heater has a shelf. The shelf portion is capable of receiving an end portion of a facing panel heater, and the end portion of the facing panel heater relates to a substrate heating device of a semiconductor manufacturing apparatus which is pressed against the shelf portion by pressing means. Further, the pressing means is mounted on an end of the facing panel heater, a heater clamp, a heater clamper fitted to the heater clamp and the shelf, and screwed to the heater clamper to fix the heater clamp. The present invention relates to a substrate heating apparatus of a semiconductor manufacturing apparatus comprising a holding screw for pressing the facing panel heater, and to a substrate heating apparatus of a semiconductor manufacturing apparatus wherein the heater support frame has a reflection plate. Further, the substrate to be processed can be carried in from the side wall of the vacuum chamber, the heater support frame is supported via a column which hermetically penetrates the bottom plate of the vacuum chamber, and a screw rod connected to the column via a nut is a lifting motor. The present invention relates to a substrate heating apparatus of a semiconductor manufacturing apparatus which is driven to rotate. As a result, it becomes possible to heat a plurality of substrates to be processed simultaneously, greatly shortening the tact time, and furthermore, since a panel heater is used instead of the conventional heating lamp and far-infrared radiation plate, the heating unit becomes more compact, and The substrate is also heated from the side, and the panel heater is divided into zones, and each zone is individually temperature-controlled, so that a plurality of substrates to be processed can be simultaneously and uniformly heated.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.

A hollow support 26 is provided to hermetically penetrate the bottom plate 25b of the vacuum chamber 25, and a substrate heating unit 27 is provided at an upper end of the support 26. The support 26 is an elevator provided below the vacuum chamber 25. It is erected on an elevator 29 of 28. A reflection plate 60 is provided on the inner surface of the vacuum chamber 25, and a thermocouple (not shown) for measuring the temperature in the vacuum chamber 25 is provided. The ceiling plate 25 of the vacuum chamber 25
a, a cooling channel is formed in the bottom plate 25b, cooling water is introduced into the cooling channel, and the ceiling plate 25a, the bottom plate 2
5b is cooled to a predetermined temperature.

The substrate heating unit 27 will be described.

A pedestal 31 is fixed to a flange 30 provided at the upper end of the column 26 and the heater support frame 3 is
Install 2. The heater support frame 32 has two lower beams 3.
3, a pair of side frames 34 erected on the lower beam 33, and two upper beams 35 extending over the upper end of the side frame 34, and the lower beam 33 is
1, a reflector 37 is provided at the upper end of the side frame 34 so as to form a top plate of the heater support frame 32. The side frame 34 has three side pillars, and a required number of grooves 38 are engraved at a required pitch on the inner surface of each of the three side pillars. Is fixed.

The facing panel heater 40 is a cast-in resistance heater panel heater made of aluminum in which heater wires are embedded, and two heat insulating collars 41 are fixed to each side surface of the facing panel heater 40 by fixing pins 42. The heat insulating collar 41 is slidably fitted in the groove 38. The facing panel heater 40 is inserted into each of the grooves 38 via the heat insulating collar 41, and the facing panel heater 40 is fixed to the heater support frame 32 by the fixing pins 42 inserted through the fixing holes 39 via the heat insulating collar 48. Fixed to or,
The distance between both end surfaces of the left and right heat insulating collars 41 is smaller than the distance between the bottom surfaces of the grooves 38 facing each other. Thus, the facing panel heater 40 is allowed to expand in both the front-back direction and the left-right (width) direction around the fixing pin 42.

Substrate guide pins 43 are planted at four locations on the upper surface of the facing panel heater 40, and a substrate receiver made of a heat insulating material is provided at a position corresponding to the upper end of each of the substrate guide pins 43 in the side column of the side frame 34. 44 are provided. The board receiver 44 has a shelf surface 44a coinciding with the upper end of the board guide pin 43 and a guide surface 44b inclined from the shelf surface 44a in a wide direction.

Current introducing terminals 4 are provided on both sides of the base 31.
A terminal plate 46 in which a required number of 5 are implanted is fixed, the terminal plate 46 and the facing panel heater 40 are connected, and a power supply cable 47 connected to the current introduction terminal 45 passes through the inside of the support 26. It is inserted and connected to a power supply (not shown). The power supply (not shown) is configured such that power supply to the facing panel heater 40 is controlled by a temperature controller (not shown). The temperature controller individually controls the temperature of the facing panel heater 40, The temperature difference caused by the vertical position of the substrate does not occur. Also, the heater wire embedded in the facing panel heater 40 is divided into a plurality of regions, and the power supply to the heater wires belonging to the divided region is individually controlled to control the zone temperature in one facing panel heater 40. Becomes possible. By performing the zone temperature control, it is possible to precisely control the temperature uniformity within the same substrate.

Next, the elevator 28 will be described.

A bracket 50 is fixed to the lower surface of the vacuum chamber 25, and an elevating motor 51 with a speed reducer is attached to the bracket 50. A screw rod 52 is connected to the output shaft of the elevating motor 51 with the speed reducer. The elevating table 29 is fitted to a guide rod (not shown) and can be moved up and down. The elevating table 29 is screwed to the screw rod 52 via a nut block 53. The column 26 is erected on the elevating table 29 and passes through the bottom plate 25b of the vacuum chamber 25. The through portion of the column 26 is airtight by a bellows 54 attached to the column 26. .

In the drawing, reference numeral 55 denotes a transfer arm of a transfer robot (not shown) for loading and unloading the substrate 23 to be processed.
56 is a substrate receiving plate at the tip of the transfer arm, and 57 is a substrate transfer port.

The operation will be described below.

When the substrate heating unit 27 is lowered to the lowermost position by the elevating motor 51 with the speed reducer, the substrate 2 to be processed is placed on the substrate receiving plate 56 of the transfer arm 55.
3 is received and carried into the vacuum chamber 25 through the substrate transfer port 57. The substrate heating unit 27 is slightly raised by the elevating motor 51 with the reduction gear, and the substrate 23 to be processed is received on the substrate receiver 44. In the process of ascending the vacuum chamber 25, the substrate guide pins 43 are used to
And the X-direction is adjusted by the guide surface 44b of the substrate receiver 44. Here, the board guide pin 43 is connected to the facing panel heater 4.
0, and there is a position change due to the thermal expansion of the facing panel heater 40, but the position is set in anticipation of the amount of thermal expansion, and the substrate receiver 44 is attached to the heater support frame 32. Because it is provided on the side, it is not affected by the thermal expansion of the facing panel heater 40. Therefore, reproducibility of positioning of the substrate 23 is guaranteed.

When the transfer arm 55 is retracted from the vacuum chamber 25, the elevating motor 51 with a speed reducer is driven to elevate the substrate heating unit 27 by a predetermined amount, so that the second stage substrate 23 is inserted. . The substrate receiving plate 56
The sum of the amount of elevation of the substrate heating unit 27 when the substrate 23 is transferred to the substrate receiver 44 and the amount of elevation at which the substrate 23 to be processed is inserted into the second stage is determined by the pitch between the grooves 38. Become equal.

The loading operation of the substrate 23 is repeated, and the substrate 23 is inserted into all the insertion positions of the substrate heating unit 27.

Electric power is supplied to the facing panel heaters 40 via the power supply cable 47 and the current introducing terminals 45 to heat the facing panel heaters 40, and the substrate 23 is heated by radiant heat. Since the diffusion of the radiant heat is prevented by the reflection plate 60 and the reflection plate 37, the thermal efficiency is improved.

When the substrate 23 is carried out of the vacuum chamber 25 after the completion of the heating, an operation reverse to the above-described carrying-in operation is performed.

As described above, in the present embodiment, the plurality of substrates 23 are heated at one time, so that the tact time TA
(sec) is the substrate heating time TH (sec), the transport time t (sec) required for loading and unloading the substrate, and the number n of substrates that can be heated at one time.
(Sheets), it is obtained by the following formula, and the tact time can be greatly reduced by simultaneous heating of a plurality of sheets.

[0031]

## EQU1 ## TA = (TH + t) / n

Next, a second embodiment will be described with reference to FIGS. 6 to 9, the same components as those shown in FIGS. 1 to 5 are denoted by the same reference numerals. Further, the elevator 28 and the vacuum chamber 25 are the same as those in the above-described embodiment, and thus the details are omitted, and the substrate heating unit 27 will be described below.

A heater support frame 62 is provided on the flange 30 fixed to the upper end of the column 26. The heater support frame 62 includes four lower beams 63, a pair of side frames 64 erected at the ends of the lower beams 63, and three upper beams 65 laid over the upper ends of the side frames 64. The lower beam 63
Are fixed to the flange 30 by bolts 66.

A reflecting plate 67 is provided between the lower beam 63 and the lower beam 63, and is reflected between the upper beam 65 and the upper beam 65 so as to form a top plate of the heater support frame 62. A plate 68 is provided, and a reflection plate 69 is provided on the side frame 64.

A side panel heater 70 is provided inside the side frame 64 with a required gap. As the side panel heater 70, an aluminum cast-type resistance heating panel heater or the like in which heater wires are embedded is used. The side panel heater 70 is mounted on the lower beam 63 via a support pin 71, and the support pin 71 is
Planted in. A spacer 72, which is a heat insulating material, is screwed to the side surface of the side panel heater 70.
A heater fixing bolt 74 which penetrates the side frame 64 is screwed to the side frame 64. A heat insulating collar 73 is interposed between the heater fixing bolt 74 and the side frame 64, and the side panel heater 7 is provided.
Numeral 0 is provided insulated from the heater support frame 62.

Inside the side panel heater 70, a shelf 75 is provided at a required interval in the vertical direction at a required interval (seven steps in the present embodiment) over the entire length. A heater presser 77 facing the shelf 75 is mounted so as to sandwich an end of the facing panel heater 76. A step 78 is formed at the end of the heater presser 77, and a U-shaped heater clamper 80 is fitted to the step 78 and the end of the shelf 75. A presser screw 81 is screwed into the heater clamper 80 from above, and the heater presser 77 is tightened by tightening the presser screw 81.
Is pressed by the facing panel heater 76.

A U-shaped substrate receiver 82 is provided between the shelves 75, and the side panel heater 7 is provided.
The substrate receiver 82 is fixed to the side panel heater 70 by a bolt 83 penetrating through the “0”. The center-side protruding portions at both ends of the substrate receiver 82 are mounted on the mounting portions 82 of the substrate 23 to be processed.
a, and an inclined portion 82 is provided at the base of the mounting portion 82a.
b is formed, and the to-be-processed substrate 2 is
(3) An alignment effect at the time of mounting occurs.

A thermocouple 85 is provided at an intermediate position of the side panel heater 70 to detect the temperature of the side panel heater 70, and a thermocouple 86 is provided at a required lower surface of each of the facing panel heaters 76, for example, at the center. The temperature of the facing panel heater 76 is detected. The wiring of the thermocouple 85 and the thermocouple 86 is temporarily fixed to a cable fixing bracket 87 together with a power supply cable for the side panel heater 70, and further passes through a cable bear 88 through a hermetic seal (not shown). Guided to the side.

The operation will be described below with reference to FIG.

The substrate heating unit 27 is lowered to the lowest position by the elevating motor 51 with the speed reducer. In this state, the substrate 23 to be processed is received on the substrate receiving plate 56 of the transfer arm 55, From the transfer port 57, the vacuum tank 25
Carry in. The substrate heating unit 27 is slightly raised by the elevating motor 51 with the speed reducer,
The substrate 23 to be processed is received in 2. As described above, the inclined portion 82b is provided on the substrate 23 to be processed with respect to the substrate receiver 82.
Correct the misalignment of.

When the transfer arm 55 is retracted from the vacuum chamber 25, the lifting / lowering motor 51 with a speed reducer is driven to raise the substrate heating unit 27 by a predetermined amount, so that the second stage substrate 23 is inserted. . The substrate receiving plate 56
The amount of elevation of the substrate heating unit 27 when the substrate 23 is transferred to the substrate
The sum of the amounts of the three insertion positions is equal to the pitch between the shelves 75. Further, in the second embodiment, the facing panel heater 76 is simply a radiation radiating plate without a heater embedded therein, so that the pitch between the shelves 75 is further reduced, and the amount of vertical movement of the elevator 28 is significantly reduced. The size of the device is reduced.

The loading operation of the substrate 23 is repeated to insert the substrate 23 into all the insertion positions of the substrate heating unit 27.

Power is supplied to the side panel heaters 70 via the power cable 47 to heat the side panel heaters 70, and the substrate 23 is heated from the side by radiant heat. Further, the side panel heater 70 is connected to the facing panel heater 7 by heat conduction through the shelf 75.
Heat 6

The side panel heater 70 may be an aggregate of divided panel heater segments corresponding to the facing panel heater 76. In this case, if the heating of the panel heater segments is individually controlled, the temperature of the facing panel heaters 76 can be individually controlled, and the temperature difference caused by the vertical position of the substrate can be eliminated.
The side panel heater 70 does not necessarily need to be a set of panel heater segments, and the embedded heater element may be divided into zones in the vertical direction, and the zone temperature may be controlled by the divided heater elements.

The side panel heater 70 and the shelf 75
The contact pressure therebetween is maintained at an appropriate value by tightening the holding screw 81, and heat conduction between the side panel heater 70 and the shelf 75 is performed well. The facing panel heater 76 heats the upper and lower surfaces of the substrate 23 by radiant heat,
Since the substrate 23 is heated in the vertical and horizontal directions, the substrate 23 can be uniformly heated even if the substrate 23 is enlarged. The facing panel heater 76 also has a function as a heat equalizing plate, and eliminates uneven temperature distribution of the substrate 23 to be processed.

Further, the heating temperature of the side panel heater 70 and the heating temperature of the facing panel heater 76 are detected by a thermocouple 85 and a thermocouple 86, respectively, and the heating temperature is controlled by a control device (not shown).

The facing panel heater 76 is connected to the substrate 2 to be processed.
Aluminum, stainless steel,
Carbon, SiC, Poly-Si, Single-Si
And the like, and a ceramic coat is appropriately applied to enhance the radiation effect.

Since the diffusion of the radiant heat is prevented by the reflection plate 67, the reflection plate 68, the reflection plate 69, and the reflection plate 60, the thermal efficiency is improved.

When the substrate 23 is carried out of the vacuum chamber 25 after the completion of the heating, an operation reverse to the above-described carrying-in operation is performed.

It is needless to say that the side panel heater 70 shown in the second embodiment can be provided in the first embodiment.

[0051]

As described above, according to the present invention, a plurality of substrates to be processed can be heated at the same time, the takt time is greatly reduced, and a panel heater is used instead of the conventional heating lamp and far-infrared radiation plate. As a result, the heating unit becomes compact, the substrate to be processed is heated from the side, and the panel heater is divided into zones, and each zone is individually temperature-controlled, so that a plurality of substrates to be processed can be uniformly and simultaneously heated. It has excellent effects such as being possible.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a first embodiment of the present invention.

FIG. 2 is an exploded perspective view of the substrate heating unit according to the first embodiment.

FIG. 3 is a partial side view of the front substrate heating unit.

FIG. 4 is a partial front view in which a part of the substrate heating unit is cut away.

FIG. 5 is a front view of the preceding substrate heating unit.

FIG. 6 is an exploded perspective view of a substrate heating unit according to a second embodiment of the present invention.

FIG. 7 is a partial perspective view in which a part of the substrate heating unit is cut away.

FIG. 8 is an enlarged view of a portion A in FIG. 6;

FIG. 9 is an enlarged view of a portion B in FIG. 7;

FIG. 10 is a front sectional view of a conventional example.

FIG. 11 is a side sectional view of a conventional example.

FIG. 12 is a side sectional view of another conventional example.

[Explanation of symbols]

 23 Substrate to be processed 25 Vacuum tank 26 Post 27 Substrate heating unit 28 Elevator 32 Heater support frame 37 Reflector 40 Face-to-face panel heater 43 Substrate guide pin 44 Substrate receiver 51 Elevating motor with reduction gear 52 Screw rod 54 Bellows 62 Heater support frame 67 Reflection Plate 68 Reflector 69 Reflector 70 Side Panel Heater 72 Spacer 75 Shelf 76 Facing Panel Heater 77 Heater Holder

Claims (13)

[Claims] A heater support frame provided in a vacuum chamber;
A substrate heating apparatus for a semiconductor manufacturing apparatus, comprising: facing panel heaters provided in a plurality of stages in the heater supporting frame; and support means for supporting a substrate to be processed between the facing panel heaters. 2. The substrate heating apparatus of a semiconductor manufacturing apparatus according to claim 1, further comprising side panel heaters provided at both ends of said facing panel heater. 3. The center of the side surface of the facing panel heater is fixed to a heater supporting frame, and heat insulating collars are provided at both end portions of the side surface of the facing panel heater, and the heat insulating collars are fitted into grooves formed in the heater supporting frame. A substrate heating apparatus for a semiconductor manufacturing apparatus according to claim 1. 4. A substrate receiver capable of receiving a substrate to be processed on one side of the substrate to be processed is provided on the heater supporting frame side, and substrate guide pins for guiding the other side of the substrate to be processed are planted in the facing panel heater. A substrate heating apparatus for a semiconductor manufacturing apparatus according to claim 1. 5. The panel heater according to claim 1, wherein the panel heater is an aluminum cast-in type panel heater in which heater wires are embedded.
A substrate heating apparatus for a semiconductor manufacturing apparatus according to any one of claims 1 to 4. 6. A substrate heating apparatus for a semiconductor manufacturing apparatus according to claim 5, wherein a plurality of panel heaters are individually temperature-controlled. 7. The substrate heating apparatus of a semiconductor manufacturing apparatus according to claim 5, wherein one panel heater is divided into zones and each zone is individually temperature-controlled. 8. The side panel heater is a heating element,
The side panel heater is provided so as to be insulated at least with respect to the side frame of the heater support frame, and a facing panel heater is provided so as to span the left and right side panel heaters, and the facing panel heater is heated to the side panel heater by heat conduction. 3. A substrate heating apparatus for a semiconductor manufacturing apparatus according to claim 2, wherein 9. The substrate heating apparatus of a semiconductor manufacturing apparatus according to claim 8, wherein said side panel heater has a heating zone divided in a vertical direction, and said heating zones are individually controlled in temperature. 10. The side panel heater has a shelf,
9. The substrate heating apparatus according to claim 8, wherein the shelf is capable of receiving an end of a facing panel heater, and the end of the facing panel heater is pressed against the shelf by a pressing means. 11. The heater presser mounted on an end of the facing panel heater, a heater clamper fitted to the heater presser and the shelf, and screwed to the heater clamper, The substrate heating apparatus of a semiconductor manufacturing apparatus according to claim 10, further comprising: a holding screw for pressing a heater holder against the facing panel heater. 12. A substrate heating apparatus according to claim 1, wherein said heater support frame has a reflection plate. 13. A substrate to be processed can be carried in from the side wall of the vacuum chamber, and the heater support frame is supported via a column which air-tightly penetrates the bottom plate of the vacuum chamber, and a screw rod connected to the column via a nut is provided. The substrate heating apparatus of a semiconductor manufacturing apparatus according to claim 1, wherein the substrate heating apparatus is driven to rotate by a lifting motor.