JPH11204442A - Single wafer heat treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a single wafer heat treatment device capable of uniforming the temperature distribution of a gas injection surface of the shower head section. SOLUTION: The single wafer heat treatment device for conducting a prescribed heat treatment of the wafer W contained in a processing vessel 18 comprises a cylindrical processing vessel 18 capable of being evacuated through its opening 20 located at the low end, a cylindrical mount 24 with a ceiling having a mounting face 28 mounted with the wafer at its upper end, a flange section 32 for sealing an opening 20 of the vessel 18 at its low end, a shower head section 46 opposing to the mount to introduce a prescribed processing gas into the processing vessel 18 and formed by a shower temperature controlling medium path 112 through which a temperature controlling medium is made to flow to the gas injection surface opposing to the mount, and a heating means 38 set inside the cylindrical mount 24 to heat the wafer. This makes it possible to uniformalize the temperature of the gas injection surface of the shower head section.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer heat treatment apparatus for performing heat treatment on a surface of a semiconductor wafer or the like.

[0002]

2. Description of the Related Art In general, in a manufacturing process of a semiconductor integrated circuit, a desired element is obtained by repeatedly forming a film or pattern etching on a semiconductor wafer, a glass substrate, or the like, which is an object to be processed. For example, a processing apparatus that forms a film on a wafer surface includes a batch processing apparatus that can perform a film forming process on many wafers at a time and a single-wafer processing apparatus that performs processing one by one. The two devices are properly used depending on the type of film formation, the production amount, and the like.

Further, as a single-wafer processing apparatus, for example, a resistance heating type apparatus in which a susceptor is always in a heating state over a processing period of a plurality of wafers, and a high-speed temperature increase by heat from a lamp are possible. Lamp-type devices are known. The lamp type processing apparatus has an advantage that the temperature can be rapidly raised and lowered by turning on and off the lamp.However, since the lamp is basically a spot irradiation, it is difficult to uniformly accelerate the wafer in a plane. Since the life of the lamp is short, the lamp must be replaced frequently, and therefore, the resistance heater tends to be mainly used because the downtime becomes long.

In particular, as the wafer size increases from, for example, 6 inches to 8 inches or 12 inches, resistance heaters tend to be mainly used because of the necessity of uniform heating within the wafer surface. A heat treatment apparatus using such a resistance heater is disclosed in, for example, JP-A-9-45624. This will be briefly described with reference to FIG. 6. For example, a plate-like mounting table 4 made of, for example, carbon is provided on a base 6 in a processing container 2 made of, for example, aluminum. The semiconductor wafer W is mounted.

[0005] In the base 6, for example, a resistance heater 8 is embedded as a heating means, and the wafer W is indirectly heated via the mounting table 4. A shower head 12 having a large number of injection holes 10 is provided above and in parallel with the mounting table 4 so as to introduce a processing gas into the processing container 2. The side wall of the shower head section 12 is provided with a cooling refrigerant passage 14 through which a refrigerant for cooling the shower head section 12 flows, so that an unnecessary film does not adhere thereto during film formation. As a heat treatment, for example, when performing a film forming process, the process is performed by supplying a processing gas from the shower head unit 12 and maintaining a predetermined process pressure while maintaining the wafer W at a predetermined process temperature. For example, a predetermined material such as silicon or a silicon oxide film can be formed.

[0006]

By the way, in the above-described apparatus example, when the wafer size is small, the diameter of the shower head section 12 is correspondingly relatively small, so that it is opposed to the wafer W. The temperature of the gas injection surface is maintained substantially uniform without a temperature distribution, but as the wafer size increases to 8 inches and 12 inches,
The diameter size of the gas ejection surface of the shower head section 12 also increases, so that a temperature difference occurs between the central portion and the peripheral portion of the gas ejection surface, and a temperature distribution tends to occur. When a temperature difference is generated on the gas injection surface and a temperature distribution is generated, the temperature difference affects the temperature of the wafer surface and non-uniformity of the heat treatment increases. However, there is a problem that the in-plane uniformity is deteriorated.
The present invention has been devised in view of the above problems and effectively solving them. An object of the present invention is to provide a single-wafer heat treatment apparatus that can make the temperature of a gas ejection surface of a shower head uniform.

[0007]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a single-wafer heat treatment apparatus for performing a predetermined heat treatment on an object contained in a processing vessel.
A vacuum-evacuable cylindrical processing container having an opening at the lower end, and a mounting surface on which the object to be processed is formed at the upper end, and a flange at the lower end for sealing the opening of the processing container. A cylindrical mounting table having a ceiling with a portion formed therein, and a gas jet provided to face the mounting surface for introducing a predetermined processing gas into the processing container and facing the mounting surface. A shower head portion formed with a shower temperature control medium passage through which a temperature control medium flows on a surface; and a heating unit provided inside the cylindrical mounting table for heating the object to be processed. It is composed.

Thus, the opening at the lower end of the processing vessel is sealed by the flange of the cylindrical mounting table, and the object to be processed is directly mounted on the mounting surface on the upper surface of the mounting table. Become. During the heat treatment, the object to be processed is heated by the heating means installed on the atmospheric pressure side inside the cylindrical mounting table, and the processing gas is introduced into the processing container from a shower head provided opposite to the mounting surface. A predetermined heat treatment is performed. Here, on the gas ejection surface of the shower head portion, a shower temperature adjustment medium passage for flowing a temperature adjustment medium is provided, and a temperature adjustment medium is caused to flow through the passage to actively adjust the temperature of the gas injection surface. I have. For this reason, even if the diameter size of a shower head part becomes large, it becomes possible to keep the temperature of a gas injection surface substantially uniformly in the in-plane direction. As the temperature control medium, for example, a chiller can be used, and depending on the type of heat treatment, the chiller can be heated and supplied or cooled and supplied so that heating and cooling can be selectively performed. The temperature is adjusted so that the temperature of the gas injection surface becomes uniform to a desired temperature.

Further, by providing a shutter member in the vicinity of the carry-in / out port for carrying in / out the object to be processed, it is possible to compensate for thermal isotropy when the surroundings are viewed from the object. The uniformity of the in-plane temperature of the object to be processed can be further improved than the point. In particular, when the temperature of the side wall of the processing container is controlled, a temperature control medium passage is also provided in the shutter member, and a temperature control medium such as a chiller is caused to flow through the medium path.
It can be made thermally equivalent to the side wall of the processing container, and does not adversely affect the object to be processed located at the center in the container.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a single-wafer heat treatment apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional configuration diagram showing a single-wafer heat treatment apparatus according to the present invention, FIG. 2 is a plan view of the mounting table shown in FIG. 1, and FIG. 3 is a schematic diagram for explaining temperature control of a heating means and a soaking plate. FIG. 4 is a horizontal sectional view showing the shower head, and FIG. 5 is a view showing a shutter member. In this embodiment, as a single-wafer heat treatment apparatus, a CVD (Chemical Vapor D) is used.
An explanation will be given using an example of an apparatus. The CVD apparatus 16 as the heat treatment apparatus has a vacuum-evacuable processing vessel 18 formed of, for example, aluminum or the like into a cylindrical or box-like shape. The periphery is bent to form a flange portion 22.

The opening 20 of the processing vessel 18
Are sealed by the mounting table 24. More specifically, the mounting table 24 is formed of a material having high heat resistance and high corrosion resistance and a high heat permeability, such as quartz, into a cylindrical shape with a ceiling. The area of the ceiling 26 is set to be equal to or larger than the diameter of the semiconductor wafer W as an object to be processed, and the upper surface of the ceiling 26 has a mounting table 28 for mounting the semiconductor wafer W thereon. Is configured as This ceiling 2
The entire surface of 6 is subjected to a surface roughening treatment by, for example, a sand blast or the like so as to uniformly scatter the radiant heat incident from below.

A plurality of support pins 30 made of, for example, quartz (see FIG. 2) are provided at the peripheral edge of the mounting surface 28 at equal intervals along the circumferential direction. And in contact with and supported by the peripheral portion of the back surface of the. In FIG. 2, three support pins 30 are provided, but the number is not limited thereto. The height L1 of the support pins 30 is set to about 0.5 to 1.0 mm, and the in-plane uniformity of the temperature between the back surface of the wafer W and the mounting surface 28 is maintained without deteriorating the thermal efficiency. A slight gap is formed to secure it. The lower end of the mounting table 24 is bent outward to form a flange 32, and the flange 32 is connected to the opening 2 of the processing container 18.
The flange portion 22 is abutted on the flange portion 22 via a seal member 33 such as an O-ring, and is pressed down from below by a ring-shaped stopper 34, and is airtightly fixed with a bolt 36. Thereby, the inside of the processing container 18 is made airtight.

The mounting table 2 opened to the atmosphere side
A resistance heater 38 is provided in the inside of the plate 4 as a heating means close to the ceiling 26 thereof. The sheet resistance heater 38 has a diameter equal to or larger than the wafer diameter, and uses, for example, Kanthal (trade name) mainly composed of molybdenum disilicide, which generates a large amount of heat per unit area. be able to. Also,
Between the resistance heater 38 and the ceiling 26, specifically, on the upper surface of the resistance heater 38, a thin heat equalizing plate 40 of, for example, SiC having substantially the same size is provided. The soaking plate 40 is heated by 38, and the wafer W can be heated by the radiant heat. Thereby, the temperature distribution on the heater surface is compensated by the heat equalizing plate 40, so that the in-plane temperature of the wafer W can be more uniformly heated and maintained.

Here, the resistance heater 38 and the soaking plate 40
Is a plurality of, for example, three zones 38A, 38B, 38C and 40A, 40B, 40C concentrically as shown in FIG.
In particular, the resistance heater 38 can independently control the supply power for each zone. In addition, each zone 40A, 40B, 40 of the heat equalizing plate 40
A temperature detecting probe 42 such as a thermocouple is provided at a substantially central portion of C.
4 is each zone 38A, 38B of the resistance heater 38, 3
8C will be supplied with power. In this case, the outermost zone 38A in which the amount of heat radiation is larger than that in the center side includes:
More power is turned on.

Returning to FIG. 1, a shower head 46 made of, for example, aluminum, which is a feature of the present invention, is provided on the ceiling of the processing vessel 18 for introducing a processing gas into the vessel facing the mounting table 28. Are hermetically provided via a sealing member 48 such as an O-ring. This shower head 46
Has a gas diffusion chamber 50 therein, which is connected to a gas inlet 52 connected to a gas supply system (not shown) provided with a processing gas source and a flow controller. The inside of the gas diffusion chamber 50 is vertically divided into two stages by a diffusion plate 56 having a large number of gas diffusion holes 54 having a diameter of about 1 to 4 mm, for example. The diffusion plate 56 may be provided in two or more stages to partition the inside of the gas diffusion chamber 50 into a plurality of stages of three or more stages. Further, the gas injection surface 58 facing the mounting surface 28 has a diameter of 0.5
A large number of gas injection holes 60 of about 3 mm are provided so that the processing gas can be uniformly supplied to the processing space.

The gas injection surface 58 is provided with a shower temperature control medium passage 62 for flowing a temperature control refrigerant as shown in FIG. This shower temperature control medium passage 6
2 is, for example, about 5 mm in width and about 8 mm in height, and is provided with a plurality of linear medium passages 64 provided in parallel at intervals of about 12 mm, for example, at intervals of about 12 mm, and a lower peripheral edge of the shower head 46. The ring-shaped medium passage 66 is provided, and both ends of each linear medium passage 64 are communicated with the ring-shaped medium passage 66. The central portion of the ring-shaped medium passage 66 to which one end of the linear medium passage 64 is connected,
The temperature control medium introduction passage 70 formed on the side wall 68 of the shower head 46 is connected to allow the temperature control medium to be introduced, and the central portion of the ring-shaped medium passage 66 on the opposite side. Is the side wall 6 of the shower head 46.
The temperature control medium connected to the temperature control medium discharge passage 72 formed in FIG. 8 can be discharged to the outside of the system. This temperature control medium will be used in circulation.

The side wall 6 of the shower head 46 is
8 also communicates with the introduction passage 70 and the discharge passage 72 and has a ring-shaped side wall medium passage 76 along the circumferential direction thereof.
Are formed, so that the temperature of the side wall 68 and the gas injection surface 58 of the shower head section 46 can be adjusted. In particular, a medium temperature controller 80 for adjusting the temperature of the medium is provided in the medium passage 78 connected to the temperature control medium introduction passage 70, and the medium can be supplied in a heated state as necessary.
Alternatively, it can be supplied or selected in a cooled state.

The shape and arrangement of the shower temperature control medium passage 62 are merely examples, and the present invention is not limited to this. Further, three lifter mechanisms 82 (see FIG. 2) are provided at equal intervals along the circumferential direction at the lower portion of the side wall of the processing container 18, thereby holding the peripheral edge of the rear surface of the wafer W and holding it. Can be moved up and down above the mounting surface 28. Specifically, each lifter mechanism 82 hermetically provides a lifter container 86 of a predetermined height having a height equal to or more than the elevating stroke of the wafer W in a lifter opening 84 provided below the side wall of the processing container 18. A lifter arm 88 made of, for example, quartz bent in an L-shape is accommodated, and a lifter plate 90 also made of quartz is attached to the end of the arm 88 facing the center of the mounting surface 28. The base end of the lifter arm 88 is driven up and down by lifter lifting means 92 provided on the lifter container 86. The lifter elevating means 92 has a lifter elevating rod 96 attached via a bellows 94 which can be extended and contracted with respect to the lifter container 86, and a distal end of which is connected to a base end of the lifter arm 88. It is possible to go up and down airtight.

The mounting surface 28 of the mounting table 24 corresponds to the mounting position of the lifter plate 90, and has a shallow concave relief for accommodating and releasing the distal end of the lifter plate 90 during this descent. Three grooves 98 are provided at equal intervals to prevent the lifter plate 90 from interfering with the mounting surface 28. In addition, the wafer W
There is provided a loading / unloading port 100 for loading / unloading the container with respect to the container,
This includes, for example, a load lock chamber 104 that can be evacuated through a gate valve 102 that can be opened and closed.
Are connected.

Further, a shutter member 106 is provided on the side wall of the processing container 18 so as to face the carry-in / out port 100 and cover this portion. Specifically, the shutter member 106 has an aluminum shutter plate 110 of a predetermined thickness positioned in a concave portion 108 formed in the container side wall of the carry-in / out entrance 100. The entrance 100 can be covered or opened. The shutter plate 110 is formed, for example, in an arc shape along the container side wall, and is flush with the container side wall. This makes it possible to ensure thermal isotropy when viewing the periphery from the wafer W. As shown in FIG. 5, a shutter temperature control medium passage 112 for flowing a temperature control medium is formed in the shutter plate 110 so that the temperature can be controlled.

The shutter plate 110 is a shutter lifting mechanism 1 for raising and lowering the shutter plate 110 by a predetermined stroke.
14. More specifically, the shutter lifting mechanism 114 has two shutter lifting rods 116 made of, for example, aluminum, the upper ends of which are bent in an L-shape. It is connected and supported at the upper end. The shutter lifting rod 116 extends downward through a lifter container 120 airtightly connected to a lifter opening 118 provided at the lower part of the container side wall. Bellows 12 made
The shutter lifting rod 116 can be raised and lowered in an airtight manner. This shutter lifting rod 116
Is raised and lowered by lifting means (not shown).

A medium passage 124 is formed in each of the shutter lifting / lowering rods 116. The medium passage 124 is communicated with a shutter temperature control medium passage 112 provided on the shutter plate 110, as necessary, to thereby allow the shutter passage 110 to move. Thus, the medium set at a predetermined temperature is circulated and circulated. Further, a side temperature control medium passage 126 for flowing a temperature control medium is formed in the entire side wall of the processing vessel 18, and a temperature-controlled medium is supplied to the side temperature control medium passage 126 to control the temperature of the side wall according to the process. It is designed to be maintained at a high or low temperature. Further, an exhaust port 130 for exhausting the atmosphere in the container is provided on the side wall of the processing container 18, and a vacuum exhaust system (not shown) provided with a vacuum pump or the like is connected to the exhaust port 130. Can be evacuated.

Next, the operation of the present embodiment configured as described above will be described. First, an unprocessed semiconductor wafer W
Is loaded into the processing container 18 maintained in a vacuum state in advance through the gate valve 102 opened from the load lock chamber 104 by the transfer arm (not shown), and is received by the three lifter plates 90 which are raised. hand over. And
After retreating the transfer arm (not shown) from the inside of the processing container 18, the three lifter plates 90 holding the back surface of the wafer W are simultaneously lowered by driving the lifter elevating means 92. The back surface of the wafer W is supported by three support pins 30 provided on the mounting surface 28 and transferred to the mounting surface 28, and the lifter plate 90 is directly lowered and retracted into the escape groove 98. Become. The state at this time is shown in FIG.

Next, the gate valve 102 is closed, and the shutter lifting / lowering mechanism 114 is driven to raise the shutter lifting / lowering rod 116 to raise the shutter plate 110, thereby covering the inside of the carry-in / out opening 100. In this state, the wafer W is heated to the process temperature by further applying heat from the resistance heater 38 to the soaking plate 40 which has been heated to the process temperature in advance or heated to a temperature somewhat lower than the process temperature. Keep warm. And, further, a predetermined processing gas from the shower head 46,
For example, a film forming gas such as a silane gas and a hydrogen gas is supplied into the processing container 18 while the inside thereof is evacuated to maintain a predetermined process pressure.
As the process conditions, the film formation temperature is, for example, about 620 ° C. for forming a polysilicon film, about 580 ° C. for forming an amorphous silicon film, and the process pressure is, for example, 5 × 10 5 ^-3 Torr.
This process condition is merely an example and is not limiting.

Here, the film tends to adhere not only to the upper surface of the wafer W but also to any surface of the member exposed to the processing space. Since the lid made of quartz also seals the lower part of 18, the extra member such as the susceptor is not exposed to the processing space. Therefore, in the case of the conventional apparatus, since the thin susceptor was installed in the processing vessel, the film was unevenly deposited on the susceptor, and the form factor changed, and in the present embodiment, such inconvenience was caused. As a result, the in-plane temperature of the wafer can be maintained substantially uniform. Further, since the extra members are eliminated from the inside of the processing container 18, the amount of degassing during evacuation is reduced by that amount, and evacuation to a predetermined degree of vacuum can be performed quickly. Also, the wafer W
Is not directly heated by the resistance heater 38, but heats the soaking plate 40 provided on the heater 38 and indirectly heats the wafer W by radiant heat from the heater 38. Even if a heat distribution is generated in the plane, the heat equalizing plate 40 can compensate for this. Therefore, the uniformity of the in-plane temperature of the wafer can be improved more than this point.

Further, as shown in FIG.
For example, since the temperature is individually controlled by each of the zones 38A, 38B, 38C of the resistance heater 38 for each of the concentric zones 40A, 40B, 40C, for example, the outer zone 40A in which the amount of heat radiation tends to be larger than the center is provided. As much heat can be input as possible, more precise temperature control can be performed. The number of zones is not limited to three zones. When the wafer size is as small as 6 inches, two zones may be used. When the wafer size is as large as 8 inches or 12 inches, 3 zones as shown in the drawing.
Zones or a larger number of zones may be used. Further, the resistance heater 38 and the soaking plate 40 are
Since the maintenance work is provided on the atmosphere side inside the recessed mounting table 24, it is not necessary to break the vacuum in the processing container 18 in this maintenance work, and the maintenance work can be performed quickly and easily.

Further, since the wafer W is supported on the mounting surface 28 by three support pins 30 with a small gap, the mounting surface made of quartz is difficult to obtain flatness due to poor workability. The radiant heat tends to be more uniformly applied to the wafer as compared with the case where the wafer is directly placed on the wafer 28, and the in-plane uniformity of the wafer temperature can be improved more than this point. On the other hand, the processing gas introduced from the gas inlet 52 of the shower head 46 into the upper gas diffusion chamber 50 is diffused in the horizontal direction in the gas diffusion chamber 50 while a large number of gas diffusion holes 5 provided in the gas diffusion plate 56.
4, the gas flows downward, and further flows into the lower gas diffusion chamber 50 to be diffused and discharged from the many gas injection holes 60 into the processing space.

At this time, the side wall 68 of the shower head 46
The temperature control medium flows through the side wall medium passage 68 formed in
The temperature control medium also flows through a linear medium passage 64 formed in the gas injection surface 58 as shown in FIG. 4, and the side wall 68 and the gas injection surface 58 are maintained at a predetermined temperature. As the temperature control medium, for example, a chiller is used. When a polysilicon or amorphous silicon film is formed at a process temperature of about 600 ° C. as the heat treatment, for example, the chiller cooled to about 0 to 25 ° C. is used as the medium. To make the side wall 68 and the gas injection surface 58 e.g.
Cool to a uniform degree. In particular, since the linear medium passage 64 is provided over substantially the entire surface of the gas injection surface 58 as shown in FIG. 4, it can be uniformly cooled and maintained at the low temperature as described above.

In the conventional apparatus example, since no temperature control function is provided on the gas injection surface, especially when the wafer size is increased to about 12 inches, the gas injection surface may be slightly. In some cases, a temperature difference may occur depending on the location and a temperature distribution may occur, and this temperature distribution may cause in-plane non-uniformity of the film thickness of a film formed on a wafer to deteriorate. As in the embodiment, the gas injection surface 58
For example, by forcibly cooling the gas injection surface to a certain degree, a temperature difference hardly occurs on the gas injection surface 58, and this can be maintained at a substantially uniform temperature in the surface.
For this reason, the temperature distribution on the gas injection surface is suppressed, so that it is possible to form a uniform film thickness even on a large-diameter wafer. In particular, when the wafer size is large, the temperature at the center of the gas injection surface 58 tends to be high, and the temperature at the peripheral edge tends to be low.
This can be made uniform by eliminating the temperature difference between the center and the periphery. The flow rate and temperature of the chiller may be appropriately selected according to the temperature to be cooled.

Further, here, the cooled chiller is flowed to uniformly cool the gas injection surface 58. However, depending on the type of film formation or the type of heat treatment, the heated chiller is flowed to uniformly heat the gas injection surface. In some cases. For example, when a silicon nitride film or a surface oxidation treatment is performed, a heated chiller is caused to flow over the gas injection surface to uniformly heat the gas injection surface because of the high process temperature. Furthermore,
Since the portion of the side wall 68 of the shower head 46 is also cooled as described above, it is possible to prevent unnecessary film deposition from adhering thereto.

On the other hand, at the same time as the cooling of the shower head 46, the side temperature control medium passage 12 provided on the side wall of the processing vessel 18 is provided.
A chiller cooled to, for example, about 0 to 60 ° C. as a medium also flows through a shutter temperature control medium path 112 (see FIG. 5) provided in the shutter plate 110 of the shutter member 106 and the shutter member 106 to cool the medium. Thereby, it is possible to prevent unnecessary film formation such as polysilicon or amorphous silicon from adhering to the container side wall or the shutter plate 110. In particular, in this embodiment, the shutter plate 110 is raised so as to cover the side surface of the carry-in / out entrance 100. Further, since the container side wall and the curved surface of the shutter plate 110 are flush with each other, the wafer is centered. When the surroundings are viewed as above, the thermal isotropy is secured. Therefore, the temperature of the wafer portion facing the loading / unloading port 100 does not decrease as compared with the other portions, and the in-plane uniformity of the wafer temperature can be further improved.

The cooling temperature of the side wall and the shutter plate 110 is, of course, not limited to the above-mentioned cooling temperature as long as unnecessary film formation does not adhere. When opening the inside of the processing container 18 as in the case of maintenance,
A heated chiller is passed through each medium passage to prevent moisture in the air from adhering to each member, and the subsequent evacuation operation is performed quickly. In addition, although the case where the film forming process is performed as the heat treatment has been described as an example, the present invention is not limited to this, and it is needless to say that the present invention can be applied to an oxidation process, an annealing process, a diffusion process, an etching process, and the like. Furthermore,
The object to be processed is not limited to a semiconductor wafer, but may be an LCD.
A substrate, a glass substrate, or the like can also be used.

[0033]

As described above, according to the single-wafer heat treatment apparatus of the present invention, the following excellent operational effects can be exhibited. A shower temperature control medium passage is provided on the gas injection surface of the shower head portion provided opposite to the mounting table, and the temperature control is positively performed by flowing the temperature control medium through the passage. Even when the diameter size increases, the temperature distribution in the gas injection surface can be suppressed, and the in-plane uniformity of the temperature of the gas injection surface can be greatly improved. Therefore, the gas injection surface does not thermally affect the object to be processed,
In-plane uniformity of the heat treatment for the object to be processed can be improved. For example, in the case of a film forming process, in-plane uniformity of the film thickness can be improved. Further, by providing a shutter member in the vicinity of the loading / unloading port for loading / unloading the workpiece,
Thermal isotropy when the surroundings are viewed from the object to be processed can be ensured, and the in-plane uniformity of the temperature of the object to be processed can be improved from this point. In the case of controlling the temperature of the side wall of the processing container, a temperature control medium passage is also provided in this shutter member to flow the temperature control medium, thereby improving the thermal isotropy when the surroundings are viewed from the object to be processed. More can be secured.

[Brief description of the drawings]

FIG. 1 is a cross-sectional configuration diagram illustrating a single wafer type heat treatment apparatus according to the present invention.

FIG. 2 is a plan view of the mounting table shown in FIG.

FIG. 3 is a schematic diagram for explaining temperature control of a heating unit and a soaking plate.

FIG. 4 is a horizontal sectional view showing a shower head unit.

FIG. 5 is a diagram illustrating a shutter member.

FIG. 6 is a schematic configuration diagram showing a conventional single-wafer heat treatment apparatus.

[Explanation of symbols]

 Reference Signs List 16 CVD apparatus (heat treatment apparatus) 18 Processing container 20 Opening 24 Mounting table 28 Mounting surface 30 Support pin 32 Flange section 38 Resistance heater (heating means) 40 Heat equalizing plate 46 Shower head section 62 Shower temperature control medium passage 64 Straight line Medium passage 66 ring-shaped medium passage 82 lifter mechanism 90 lifter plate 92 lifter elevating means 98 escape groove portion 100 carry-in / out port 106 shutter member 110 shutter plate 112 shutter temperature control medium passage 114 shutter elevating mechanism W semiconductor wafer (workpiece)

Claims (4)

[Claims] 1. A single-wafer heat treatment apparatus for performing a predetermined heat treatment on an object to be processed housed in a processing container, comprising: a vacuum-evacuable cylindrical processing container having an opening at a lower end; A cylindrical mounting table having a ceiling with a mounting surface on which the processing object is mounted at an upper end and a flange formed at a lower end to seal an opening of the processing container; and A shower head portion provided to face the installation surface for introducing a predetermined processing gas into the shower head and having a shower temperature adjustment medium passage formed therein for flowing a temperature adjustment medium to a gas ejection surface opposed to the installation surface. And a heating means provided inside the cylindrical mounting table for heating the object to be processed. 2. The single-wafer heat treatment apparatus according to claim 1, wherein the heating and cooling of the temperature control medium can be selectively performed according to the type of heat treatment. 3. A side wall of the processing container is provided with a loading / unloading port which can be opened / closed for loading / unloading the object to be processed, and a shutter member which can be moved up and down is provided near the loading / unloading port. The single-wafer heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is provided. 4. The single-wafer heat treatment apparatus according to claim 3, wherein a temperature control medium passage through which a temperature control medium flows is formed in a side wall of the processing container and the shutter member.