JPH10241857A - Manufacture of thin film electric field light emitting element - Google Patents
Manufacture of thin film electric field light emitting elementInfo
- Publication number
- JPH10241857A JPH10241857A JP9038765A JP3876597A JPH10241857A JP H10241857 A JPH10241857 A JP H10241857A JP 9038765 A JP9038765 A JP 9038765A JP 3876597 A JP3876597 A JP 3876597A JP H10241857 A JPH10241857 A JP H10241857A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mask
- insulating layer
- annealing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 230000005684 electric field Effects 0.000 title claims abstract description 6
- 238000000137 annealing Methods 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 9
- 239000011593 sulfur Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 17
- 230000007062 hydrolysis Effects 0.000 claims description 4
- 238000006460 hydrolysis reaction Methods 0.000 claims description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000004434 sulfur atom Chemical group 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 208000003028 Stuttering Diseases 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はディスプレイパネル
等に用いられる、薄膜電場発光素子の製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film electroluminescent device used for a display panel or the like.
【０００２】[0002]
【従来の技術】フラットパネルディスプレイの一つであ
る薄膜電場発光ディスプレイは、高速応答、広視野角、
高解像度など多くの優れた特長を有し、ＦＡ用、車両搭
載用、携帯用コンピュータの端末の表示装置として注目
されている。従来、黄橙発光が得られるＭｎを添加した
ＺｎＳ（ＺｎＳ：Ｍｎ）を発光層とするモノクロームデ
ィスプレイが市販されていたが、最近、青緑発光が得ら
れるＣｅを添加したＳｒＳ（ＳｒＳ：Ｃｅ）とＺｎＳ：
Ｍｎを積層した発光層を有するＲＧＢフルカラーディス
プレイが市販されるようになった。しかしながら、青色
の色純度が悪く、ＳｒＳ：Ｃｅ膜を高輝度化する必要が
ある。2. Description of the Related Art A thin-film electroluminescent display, which is one of flat panel displays, has a fast response, a wide viewing angle,
It has many excellent features such as high resolution, and has attracted attention as a display device for FA, on-vehicle, and portable computer terminals. Conventionally, a monochrome display using ZnS (ZnS: Mn) to which Mn is added to obtain yellow-orange light emission as a light-emitting layer has been commercially available. And ZnS:
An RGB full-color display having a light-emitting layer in which Mn is laminated has become commercially available. However, blue color purity is poor, and it is necessary to increase the luminance of the SrS: Ce film.
【０００３】図３は薄膜電場発光パネルを模式的に示
し、（ａ）は断面図であり、（ｂ）は外部リードとの接
続部の平面図である。ガラス基板１上に短冊状にパター
ニングされた金属薄膜などからなる第１の電極２ａが形
成されており、その上に第１の絶縁層３ａが形成されて
いる。第１の電極２ａの両端は、パネルが完成した後に
この部分に駆動回路とパネルとを接続する外部リード９
（フレキシブルプリント回路基板（以下、ＦＰＣと記
す）を接続するため露出されており、接続端子とされ
る。発光膜４は、例えばＺｎＳ：ＭｎおよびＳｒＳ：Ｃ
ｅの積層膜からなるが、第１の電極２ａ端子部の内側に
形成され、さらに第２の絶縁層３ｂにより被覆されてい
る。さらに、第１の電極２ａと直交するように短冊状に
パターニングされた透明電極である第２の電極２ｂが積
層される。このようにして形成された薄膜電場発光素子
には、封止材７を介してＲＧＢカラーフィルタ５が形成
されているガラス板６が被せられ、防湿用の充填材８が
注入され、封止されて薄膜電場発光パネルとされる。FIG. 3 schematically shows a thin-film electroluminescent panel, in which (a) is a cross-sectional view and (b) is a plan view of a connection portion with an external lead. A first electrode 2a made of a striped metal thin film or the like is formed on a glass substrate 1, and a first insulating layer 3a is formed thereon. Both ends of the first electrode 2a are connected to external leads 9 for connecting the drive circuit and the panel to this portion after the panel is completed.
(Exposed to connect a flexible printed circuit board (hereinafter referred to as FPC) and used as a connection terminal. The light emitting film 4 is made of, for example, ZnS: Mn and SrS: C.
e, which is formed inside the terminal portion of the first electrode 2a and further covered with the second insulating layer 3b. Further, a second electrode 2b, which is a transparent electrode patterned in a strip shape so as to be orthogonal to the first electrode 2a, is laminated. The thin-film electroluminescent element thus formed is covered with a glass plate 6 on which the RGB color filters 5 are formed via a sealing material 7, and a sealing material 8 for injecting moisture is injected and sealed. Thin-film electroluminescent panel.
【０００４】発光層４の一部を形成する青色発光材料で
あるＳｒＳ：Ｃｅは電子ビーム蒸着などにより成膜され
るが、Ｓ原子の蒸気圧がＳｒ原子に対して大きいため、
形成されたＳｒＳ結晶中には硫黄空孔が存在する。この
ために、フルカラーディスプレイに必要な青色の輝度が
得られないので、発光層成膜後に硫黄蒸気雰囲気中ある
いは硫化水素、六フッ化硫黄などの硫黄原子を含むガス
雰囲気中でアニールを行い、輝度を向上させていた。[0004] SrS: Ce, which is a blue light-emitting material that forms a part of the light-emitting layer 4, is formed by electron beam evaporation or the like, but the vapor pressure of S atoms is higher than that of Sr atoms.
Sulfur vacancies exist in the formed SrS crystal. For this reason, since the blue luminance required for a full-color display cannot be obtained, annealing is performed in a sulfur vapor atmosphere or a gas atmosphere containing sulfur atoms such as hydrogen sulfide and sulfur hexafluoride after forming the light emitting layer, and the Had improved.
【０００５】このアニールを行うときに、第１の電極の
一部が露出していると、硫黄原子を含むガスにより硫化
され、抵抗の増加や第１の電極のガラス基板からの剥離
を引き起こしてしまう。従って、全面をアニールの影響
を第１の電極に及ぼさない材料の薄膜からなるアニール
マスクにより被覆しておく必要がある。従来はこのアニ
ールマスクは第１の絶縁層と第２の絶縁層の積層自体で
あった。If a part of the first electrode is exposed during this annealing, it is sulfided by a gas containing a sulfur atom, causing an increase in resistance and separation of the first electrode from the glass substrate. I will. Therefore, it is necessary to cover the entire surface with an annealing mask made of a thin film of a material that does not affect the first electrode due to annealing. Conventionally, this annealing mask was the lamination itself of the first insulating layer and the second insulating layer.
【０００６】第１の電極ａの接続端子の露出工程は、露
出工程時の発光層のダメージを防ぐために、第２の絶縁
層により発光層を被覆した後に行っていた。第１の電極
２ａの接続端子の露出方法として、ウェットエッチン
グ、ドライエッチング、機械研磨等を適用していた。The step of exposing the connection terminal of the first electrode a has been performed after the light-emitting layer is covered with the second insulating layer in order to prevent the light-emitting layer from being damaged during the exposure step. As a method of exposing the connection terminal of the first electrode 2a, wet etching, dry etching, mechanical polishing, or the like has been applied.
【０００７】[0007]
【発明が解決しようとする課題】しかし、アニールと露
出工程を含む薄膜電場発光素子の製造方法には以下に示
すような問題点があった。露出方法がエッチングの場
合、第１の電極層のエッチングレートは絶縁層のそれと
比較して非常に速いため、エッチングを停止するタイミ
ングの正確さが要求され、第１の電極が露出されなかっ
たり、逆に第１の電極の膜厚が減少して高抵抗化してし
まう部分が生ずることがあった。また、第１の電極表面
が変質して高抵抗化することもあった。第１の電極の高
抵抗化は輝度を低下させ、また抵抗値にむらがあると同
一電極線内で電圧が降下して輝度むらの原因となる。However, the method for manufacturing a thin film electroluminescent device including the annealing and exposing steps has the following problems. When the exposure method is etching, since the etching rate of the first electrode layer is much faster than that of the insulating layer, it is required that the timing for stopping the etching be precise, and the first electrode be not exposed, Conversely, there is a case where the thickness of the first electrode is reduced and the resistance is increased. In addition, the surface of the first electrode may be altered to increase the resistance. Increasing the resistance of the first electrode lowers luminance, and if there is unevenness in the resistance value, the voltage drops in the same electrode line, causing unevenness in luminance.
【０００８】さらに絶縁層としてＡｌ2 Ｏ3 膜などのよ
うに化学的に非常に安定な材料を用いた場合、ウェット
エッチング、プラズマエッチングによりエッチングでき
ないので、機械的強度研磨を適用していたが、その制御
は困難であり、第１の電極の膜厚を減少させずに一様に
することは困難であった。本発明の目的は、上記の問題
点に鑑み、基板側の電極の膜厚および抵抗値に影響を及
ぼさない薄膜電場発光素子の製造方法を提供することに
ある。Further, when a very chemically stable material such as an Al 2 O 3 film is used as the insulating layer, it cannot be etched by wet etching or plasma etching, so mechanical strength polishing has been applied. The control is difficult, and it is difficult to make the first electrode uniform without reducing its thickness. An object of the present invention is to provide a method of manufacturing a thin-film electroluminescent device which does not affect the thickness and resistance of an electrode on a substrate side in view of the above problems.
【０００９】[0009]
【課題を解決するための手段】上記の目的を達成するた
めに、基板上に少なくとも第１の電極、第１の絶縁層、
発光層、第２の絶縁層および第２の電極が積層されてな
り、第１の電極は外部リードとの接続のために露出され
た接続端子を有し、発光層が硫黄を含む雰囲気中でアニ
ールされる薄膜電場素子の製造方法において、前記アニ
ール時には前記接続端子は硫黄を透過させない材料のア
ニールマスクにより被覆されており、前記アニール後に
このアニールマスクは第１電極を損傷することなく除去
されることとする。In order to achieve the above object, at least a first electrode, a first insulating layer,
A light emitting layer, a second insulating layer, and a second electrode are stacked, the first electrode has a connection terminal exposed for connection to an external lead, and the light emitting layer is exposed to an atmosphere containing sulfur. In the method for manufacturing a thin film electric field element to be annealed, the connection terminal is covered with an annealing mask made of a material that does not allow sulfur to pass during the annealing, and the annealing mask is removed without damaging the first electrode after the annealing. It shall be.
【００１０】前記マスクの材料はII族金属の硫化物であ
り、前記除去は加水分解によってなされると良い。前記
マスクには第１の絶縁層および第２の絶縁層が積層され
おり、これらの絶縁層の除去は前記マスクの除去に伴う
リフトオフによってなされると良い。前記第１の絶縁層
または第２の絶縁層は前記マスクを露出部なく被覆して
おり、前記マスク除去工程前にマスクの一部が露出され
ると良い。The material of the mask is a sulfide of a Group II metal, and the removal is preferably carried out by hydrolysis. A first insulating layer and a second insulating layer are stacked on the mask, and the removal of these insulating layers may be performed by lift-off accompanying the removal of the mask. The first insulating layer or the second insulating layer covers the mask without an exposed portion, and a part of the mask is preferably exposed before the mask removing step.
【００１１】前記第１の絶縁層または第２の絶縁層はＡ
ＬＥにより成膜されていると良い。[0011] The first insulating layer or the second insulating layer is A
It is good to be formed by LE.
【００１２】[0012]
【発明の実施の形態】本発明に係る製造方法によれば、
アニール時に第１の電極は硫化されないため、低抵抗は
維持され、その表面の外部リード金属との接続性も維持
されており、外部リードとの接続端子の抵抗は高くな
く、そのばらつきは小さく、パネルの発光輝度は損なわ
れず、ばらつきは小さい。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the manufacturing method of the present invention,
Since the first electrode is not sulfurized at the time of annealing, the low resistance is maintained, the connectivity with the external lead metal on the surface is also maintained, the resistance of the connection terminal with the external lead is not high, the variation is small, The light emission luminance of the panel is not impaired and the variation is small.
【００１３】発光層のアニールはアニールマスク成膜後
であれば、発光層成膜後または第２の絶縁層成膜後のい
ずれでもよい。第１の電極として、Ｍｏの他にＷ、Ａｌ
等の金属材料またはＷＳｉなどの金属間化合物を用いる
ことができる。これらの成膜には、電子ビーム（以下Ｅ
Ｂと記す）蒸着、スパッタリング、プラズマＣＶＤ、Ｍ
ＯＣＶＤ、ＡＬＥ等を適用することができる。The annealing of the light emitting layer may be performed after the formation of the annealing mask or after the formation of the light emitting layer or the second insulating layer. As the first electrode, in addition to Mo, W, Al
Or an intermetallic compound such as WSi. An electron beam (hereinafter referred to as E)
B) evaporation, sputtering, plasma CVD, M
OCVD, ALE, or the like can be applied.
【００１４】絶縁層としては、Ａｌ2 Ｏ3 、ＳｉＮ、Ｓ
ｉＯＮ、ＳｉＯ2 の材料の他にＴａ 2 Ｏ3 、Ｙ2 Ｏ3 、
ＴｉＯ2 、ＨｆＯ2 、Ｂａ2 Ｔａ2 Ｏ5 、ＳｉＴｉ
Ｏ3 、ＳｒＴａ2 Ｏ5 、ＰｒＴｉＯ3 、ＺｒＯ2 などを
用いることができる。これらの薄膜は、ＥＢ蒸着、スパ
ッタリング、プラズマＣＶＤ、ＭＯＣＶＤ、ＡＬＥ法等
により成膜することができる。As the insulating layer, AlTwoOThree, SiN, S
iON, SiOTwoIn addition to the material TwoOThree, YTwoOThree,
TiOTwo, HfOTwo, BaTwoTaTwoOFive, SiTi
OThree, SrTaTwoOFive, PrTiOThree, ZrOTwoEtc.
Can be used. These thin films are deposited by EB evaporation, spa
Stuttering, plasma CVD, MOCVD, ALE method, etc.
To form a film.
【００１５】特に、アニールマスクを加水分解性の薄膜
材料とすると、水のみを用いてアニールマスク除去を行
うことができるので、第１の電極の表面抵抗を高くせず
に除去工程を行うことができる。加水分解性の薄膜材料
としてはＳｒＳ以外にもＢａＳ、ＣａＳあるいはこれら
の混晶などを用いることができる。これらの材料の成膜
方法としては、電子ビーム蒸着法の他に抵抗加熱蒸着
法、スパッタリング法、有機金属ＣＶＤ（ＭＯＣＶＤ）
法あるいは原子層エピタキシー法（ＡＬＥ法）などが適
用できる。In particular, if the annealing mask is made of a hydrolyzable thin film material, the annealing mask can be removed using only water, so that the removing step can be performed without increasing the surface resistance of the first electrode. it can. As the hydrolyzable thin film material, BaS, CaS, or a mixed crystal thereof can be used in addition to SrS. As a film forming method of these materials, in addition to the electron beam evaporation method, a resistance heating evaporation method, a sputtering method, an organic metal CVD (MOCVD)
A method or an atomic layer epitaxy method (ALE method) can be applied.
【００１６】水溶性の薄膜を除去する工程の実施は第２
の絶縁層の密度が高く、発光層に水分が浸透しなけれ
ば、アニールおよび第２の絶縁層形成の各工程が終了し
た後のいずれの工程の間におこなってもよい。 実施例１ 図１は本発明に係る実施例の製造工程順の薄膜電場発光
素子の断面図を示し、（ａ）マスク形成後、（ｂ）は第
１および第２の絶縁層の成膜後、（ｃ）は基板側面の研
磨後であり、（ｄ）はリフトオフ後である。The step of removing the water-soluble thin film is performed in the second step.
If the density of the insulating layer is high and moisture does not penetrate into the light emitting layer, it may be performed between any steps after the annealing and the formation of the second insulating layer. Example 1 FIGS. 1A and 1B are cross-sectional views of a thin film electroluminescent device in the order of manufacturing steps according to an example of the present invention. FIG. 1A shows a state after forming a mask, and FIG. 1B shows a state after forming first and second insulating layers. , (C) after polishing of the substrate side, and (d) after lift-off.
【００１７】先ず、ガラス基板１上に、スパッタにより
厚さ２００nmのＭｏ膜を成膜した後、フォトリソグラフ
ィーによりＭｏ膜を多数のストライプ状にパターニング
して第１の電極２ａとした。第１の電極２ａの両端部の
５mm幅にＳｒＳ：Ｃｅ膜をＥＢ蒸着法により５００nm程
度成膜し、アニールマスクとした（図２（ａ））。後工
程のＳｒＳ：Ｃｅ膜の加水分解除去に適するように、成
膜条件としては、基板加熱は行わず、蒸着速度も数１０
０nm/minと大きく、結晶性を悪化させるようにした。First, after a Mo film having a thickness of 200 nm was formed on the glass substrate 1 by sputtering, the Mo film was patterned into a number of stripes by photolithography to form a first electrode 2a. An SrS: Ce film was formed to a thickness of about 500 nm by EB vapor deposition on both ends of the first electrode 2a in a width of 5 mm, and used as an annealing mask (FIG. 2A). In order to be suitable for the hydrolysis and removal of the SrS: Ce film in the subsequent step, the film formation conditions are such that the substrate is not heated and the deposition rate is several tens.
As large as 0 nm / min, the crystallinity was deteriorated.
【００１８】次に、原子層エピタキシー（以下、ＡＬＥ
と記す）により厚さ２００nmのＡｌ 2 Ｏ3 膜を成膜し第
１の絶縁膜とした。次いで、ＥＢ蒸着により、厚さ１．
２μm のＳｒＳ：Ｃｅ膜および厚さ０．３μm ＺｎＳ：
Ｍｎ膜を順次積層して発光層とした。発光層の蒸着範囲
は第１の電極の端子部列の内側とした。さらに、ＡＬＥ
によりＡｌ2 Ｏ3 膜を２００nm成膜して第２の絶縁層と
した。ＡＬＥ成膜の場合はマスクを使用できないので、
第１、第２の絶縁層は基板全体を被覆し、基板１の側面
にも回り込んでいる。Next, atomic layer epitaxy (hereinafter referred to as ALE)
200 nm thick Al TwoOThreeThe film is formed
1 insulating film. Then, the thickness 1.
2 μm SrS: Ce film and 0.3 μm thickness ZnS:
Mn films were sequentially laminated to form a light emitting layer. Emission layer deposition range
Is inside the terminal section row of the first electrode. In addition, ALE
By AlTwoOThreeA 200-nm thick film and a second insulating layer
did. In the case of ALE film formation, a mask cannot be used.
The first and second insulating layers cover the entire substrate, and
Is also going around.
【００１９】次に、発光層の輝度向上のため、常圧のＡ
ｒとＨ2 Ｓの混合ガス雰囲気中で６３０℃のアニールを
３０分行った。次に、まず全面にスパッタにより厚さ２
００nmのＩＴＯ膜を成膜し、第１の電極のパターン方向
と直交するストライプ状にＩＴＯ膜をパターニングして
第２の電極とした。Next, in order to improve the luminance of the light emitting layer, A
Annealing at 630 ° C. was performed for 30 minutes in a mixed gas atmosphere of r and H 2 S. Next, first, a thickness of 2
An ITO film having a thickness of 00 nm was formed, and the ITO film was patterned in a stripe shape orthogonal to the pattern direction of the first electrode to form a second electrode.
【００２０】上記の工程により作製した薄膜電場発光素
子に対向して、カラーフィルタ付きのガラス基板を封止
材を介して被せ、充填材を注入し、封止して、薄膜電場
発光パネルとした（図３参照）。薄膜電場発光素子のガ
ラス基板の側面を機械研磨し絶縁層を除去し、接続端子
上のＳｒＳ：Ｃｅ膜の側面を露出させた。この状態で、
パネル全体を純水中に浸漬させ、ＳｒＳ：Ｃｅ膜のアニ
ールマスクを加水分解させると、約１時間でＳｒＳ：Ｃ
ｅは純水中に溶解して除去され、アニールマスクを被覆
していたＡｌ2 Ｏ 3 膜はアニールマスクの辺の段差部で
容易に割れて、分離された（図２（ｄ））。超音波洗浄
を行うとＳｒＳ：Ｃｅ膜の加水分解、除去は促進され
る。こうして、第１の電極の端子部が露出され、接続端
子が形成される。The thin-film electroluminescent element produced by the above steps
Seals glass substrate with color filter, facing
Over the material, inject the filler, seal,
A light-emitting panel was used (see FIG. 3). Thin film electroluminescent device
Mechanical polishing of the side of the glass substrate to remove the insulating layer
The side surface of the upper SrS: Ce film was exposed. In this state,
The entire panel is immersed in pure water, and the SrS: Ce film is annealed.
When the mask is hydrolyzed, SrS: C
e is removed by dissolving in pure water and covering the annealing mask
AlTwoO ThreeThe film is at the step on the side of the annealing mask
It was easily broken and separated (FIG. 2 (d)). Ultrasonic cleaning
Is performed, hydrolysis and removal of the SrS: Ce film are promoted.
You. Thus, the terminal portion of the first electrode is exposed, and the connection terminal
A child is formed.
【００２１】上記の第１の電極からは、硫黄原子が微量
検出されたが、電極表面抵抗およびバルク抵抗はアニー
ル前と変わりはなく、接続端子としての低抵抗は維持さ
れていた。予め電極をパターニングした、ＦＰＣを第１
電極に接続し、パネルの発光輝度を調べたところ、輝度
は高く、均一であった。From the first electrode, a trace amount of sulfur atoms was detected, but the electrode surface resistance and bulk resistance were the same as before annealing, and the low resistance as the connection terminal was maintained. FPC with electrode patterning in advance
When the panel was connected to the electrodes and the emission luminance of the panel was examined, the luminance was high and uniform.
【００２２】以上説明したように、本発明の製造方法に
より、第１の電極にダメージを与えずに、発光層のアニ
ールと、その上を覆っている絶縁膜を除去することがで
きるようになった。従って、第１の電極の高抵抗化を防
ぐことができる。また、化学的に非常に安定なＡｌ2 Ｏ
3 膜などのような絶縁材料も容易に除去することができ
るようになった。 実施例２ 図２は本発明に係る他の実施例の製造工程順の薄膜電場
発光素子の断面図を示し、（ａ）は第１および第２の絶
縁層の成膜後、（ｂ）はマスク形成後、（ｃ）はマスク
除去後である。As described above, the manufacturing method of the present invention makes it possible to anneal the light emitting layer and remove the insulating film covering the light emitting layer without damaging the first electrode. Was. Therefore, it is possible to prevent the first electrode from increasing in resistance. In addition, chemically very stable Al 2 O
Insulating materials such as three films can be easily removed. Example 2 FIGS. 2A and 2B are cross-sectional views of a thin-film electroluminescent device according to another embodiment of the present invention in the order of the manufacturing steps, wherein FIG. 2A shows a state after forming first and second insulating layers, and FIG. After the mask is formed, (c) is after the mask is removed.
【００２３】この実施例では、薄膜電場発光素子の成膜
順は実施例１と同じであるが、マスク成膜が可能なスパ
ッタにより、第１電極の接続部をマスクして、第１のお
よび第２の絶縁層を成膜した。絶縁層材料は窒化ケイ素
とした。次に、少なくとも第１電極の接続部をＥＢ蒸着
のＢａＳ膜により被覆し、アニールマスクとしたあと、
発光層のアニールを行った。In this embodiment, the film forming order of the thin film electroluminescent element is the same as that of the embodiment 1, but the connection portion of the first electrode is masked by sputtering capable of forming a mask, thereby forming the first and second thin film electroluminescent elements. A second insulating layer was formed. The insulating layer material was silicon nitride. Next, at least the connection portion of the first electrode is covered with an EB-deposited BaS film to form an annealing mask.
The light emitting layer was annealed.
【００２４】各層の厚さは実施例１と同じとした。以降
実施例１と同様に薄膜電場発光パネルを組み立てた後、
パネルを水中に浸漬し加水分解させて、ＢａＳマスクを
除去し、第１電極の接続部を露出させた。予め電極をパ
ターニングした、ＦＰＣを第１電極に接続し、パネルの
発光輝度を調べたところ、輝度は高く、均一であった。The thickness of each layer was the same as in Example 1. Thereafter, after assembling the thin-film electroluminescent panel as in Example 1,
The panel was immersed in water and hydrolyzed to remove the BaS mask, exposing the connection of the first electrode. The FPC, on which the electrodes were patterned in advance, was connected to the first electrode, and the light emission luminance of the panel was examined. The luminance was high and uniform.
【００２５】本発明により、ＥＬディスプレイの品質が
向上するばかりか、第１の電極の接続端子を露出させる
ために特別な装置が不要であり、かつ所要時間も従来の
方法と比較して短縮できるため、大幅なコスト低減が可
能となる。According to the present invention, not only is the quality of the EL display improved, but no special device is required for exposing the connection terminal of the first electrode, and the required time can be shortened as compared with the conventional method. Therefore, a significant cost reduction can be achieved.
【００２６】[0026]
【発明の効果】本発明によれば、基板上に少なくとも第
１の電極、第１の絶縁層、発光層、第２の絶縁層および
第２の電極が積層されてなり、第１の電極は外部リード
との接続のために露出された接続端子を有し、発光層が
硫黄を含む雰囲気中でアニールされる薄膜電場素子の製
造方法において、前記アニール時には前記接続部は硫黄
を透過させない材料のアニールマスクにより被覆し、前
記アニール後にこのアニールマスクは第１電極を損傷す
ることなく除去するようにしたため、第１の電極はアニ
ールおよびアニールマスクの除去の影響を受けずに、硫
化されないため、膜質の変化もなく、膜厚のばらつきも
ない。従って、輝度は高く、そのばらつきも小さく、良
好な薄膜電場発光層パネルを得ることができる。According to the present invention, at least a first electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a second electrode are laminated on a substrate, and the first electrode is A method for manufacturing a thin-film electric field element having a connection terminal exposed for connection with an external lead, wherein a light-emitting layer is annealed in an atmosphere containing sulfur. Since the first electrode is covered with an annealing mask and removed after the annealing without damaging the first electrode, the first electrode is not affected by the annealing and the removal of the annealing mask, and is not sulfurized. And there is no variation in film thickness. Therefore, the brightness is high, the variation is small, and a good thin-film electroluminescent layer panel can be obtained.
【図１】本発明に係る実施例の製造工程順の薄膜電場発
光素子の断面図を示し、（ａ）マスク形成後、（ｂ）は
第１および第２の絶縁層の成膜後、（ｃ）は基板側面の
研磨後であり、（ｄ）はリフトオフ後FIG. 1 is a cross-sectional view of a thin-film electroluminescent device according to an embodiment of the present invention in the order of a manufacturing process, in which (a) after forming a mask, (b) after forming first and second insulating layers; c) after the polishing of the substrate side, and (d) after the lift-off.
【図２】本発明に係る他の実施例の製造工程順の薄膜電
場発光素子の断面図を示し、（ａ）は第１および第２の
絶縁層の成膜後、（ｂ）はマスク形成後、（ｃ）はマス
ク除去後FIGS. 2A and 2B are cross-sectional views of a thin-film electroluminescent device according to another embodiment of the present invention in the order of the manufacturing steps, wherein FIG. 2A shows the formation of first and second insulating layers, and FIG. Later, (c) after removing the mask
【図３】薄膜電場発光パネルを模式的に示し、（ａ）は
断面図であり、（ｂ）は外部リードとの接続部の平面図3A and 3B schematically show a thin-film electroluminescent panel, wherein FIG. 3A is a cross-sectional view and FIG. 3B is a plan view of a connection portion with an external lead.
１ 基板 ２ａ 第１の電極層 ３ａ 第１の絶縁層 ４ 発光層 ２ｂ 第２の電極層 ３ｂ 第２の絶縁層 ５ カラーフィルタ ６ ガラス板 ７ 封止材 ８ 充填材 ９ フレキシブル回路 ９ａ フレキシブル基板 ９ｂ リード部 Ｍ アニールマスク Ｔ 接続端子 DESCRIPTION OF SYMBOLS 1 Substrate 2a 1st electrode layer 3a 1st insulating layer 4 Light emitting layer 2b 2nd electrode layer 3b 2nd insulating layer 5 Color filter 6 Glass plate 7 Sealing material 8 Filling material 9 Flexible circuit 9a Flexible substrate 9b Lead Part M Annealed mask T Connection terminal
Claims (5)
縁層、発光層、第２の絶縁層および第２の電極が積層さ
れてなり、第１の電極は外部リードとの接続のために露
出された接続端子を有し、発光層が硫黄を含む雰囲気中
でアニールされる薄膜電場素子の製造方法において、前
記アニール時には前記接続端子は硫黄を透過させない材
料のアニールマスクにより被覆されており、前記アニー
ル後にこのアニールマスクは第１電極を損傷することな
く除去されることを特徴とする薄膜電場発光素子の製造
方法。A first electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a second electrode laminated on a substrate, wherein the first electrode is connected to an external lead; In the method of manufacturing a thin-film electric field element having a connection terminal exposed for the light-emitting layer is annealed in an atmosphere containing sulfur, the connection terminal is covered with an annealing mask of a material that does not transmit sulfur during the annealing. And a step of removing the annealing mask after the annealing without damaging the first electrode.
り、前記除去は加水分解によってなされることを特徴と
する請求項１に記載の薄膜電場発光素子の製造方法。2. The method according to claim 1, wherein the material of the mask is a sulfide of a Group II metal, and the removal is performed by hydrolysis.
絶縁層が積層されおり、これらの絶縁層の除去は前記マ
スクの除去に伴うリフトオフによってなされることを特
徴とする請求項１または２に記載の薄膜電場発光素子の
製造方法。3. The mask according to claim 1, wherein a first insulating layer and a second insulating layer are laminated on the mask, and the removal of these insulating layers is performed by lift-off accompanying the removal of the mask. Or the method for producing a thin-film electroluminescent device according to 2.
記マスクを露出部なく被覆しており、前記マスク除去工
程前にマスクの一部が露出されることを特徴とする請求
項３に記載の薄膜電場発光素子の製造方法。4. The method according to claim 1, wherein the first insulating layer or the second insulating layer covers the mask without an exposed portion, and a part of the mask is exposed before the mask removing step. 4. The method for manufacturing a thin film electroluminescent device according to item 3.
ＬＥにより成膜されていることを特徴とする請求項４に
記載の薄膜電場発光素子の製造方法。5. The method according to claim 1, wherein the first insulating layer or the second insulating layer is A
The method according to claim 4, wherein the film is formed by LE.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9038765A JPH10241857A (en) | 1997-02-24 | 1997-02-24 | Manufacture of thin film electric field light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9038765A JPH10241857A (en) | 1997-02-24 | 1997-02-24 | Manufacture of thin film electric field light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10241857A true JPH10241857A (en) | 1998-09-11 |
Family
ID=12534392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9038765A Pending JPH10241857A (en) | 1997-02-24 | 1997-02-24 | Manufacture of thin film electric field light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10241857A (en) |
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