JPH08320568A - Formation of pattern and formation of photosensitive film - Google Patents

Abstract

PURPOSE: To obtain high resolution performance, high dry etching resistance and excellent dimensional controllability and to make it possible to execute pattern formation with high throughput at a low cost by irradiating a silicon- contg. resist film on a substrate with light to photooxidize this film and developing the film, thereby forming resist patterns. CONSTITUTION: A photosensitive material which contains >=80wt.% compd. of polymers or oligomers having Si-O bonds and Si-arom. functional base bonds or a mixture composed thereof and is formed on a substrate 1 having a work on its front surface is selectively irradiated with the light 3 of a wavelength of <=250nm in the atm. or oxygen atmosphere, by which the exposed parts are photooxidized. This material is then developed to selectively remove the exposed parts or other parts, by which the resist patterns 8 are formed. The work is etched by using such resist patterns 8. In such a case, the resist patterns 8 of >=1:1 in the ratio of the O atoms to Si atoms are preferably used.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method and a photosensitive film forming method in an optical lithography apparatus.

[0002]

2. Description of the Related Art At present, in semiconductor manufacturing, finer and finer patterns are required in accordance with higher integration. Industrially, fine processing is performed by thin film forming technology and photolithography.

Hitherto, i-line and g-line of a high pressure mercury lamp have been used as a light source, but the wavelength of an exposure light source has been shortened in order to improve the minimum processing size. Excimer laser is the most promising candidate for short wavelength light source.
Practical application of the rF excimer laser (λ = 245 nm) is under study. An ArF excimer laser (λ = 193 nm) is considered as a candidate for a further short wavelength light source.

As a resist used for these exposures, generally, an organic resist containing a phenol resin and a photosensitizer as main components is spin-coated on a substrate to be processed and exposed by a high pressure mercury lamp to form a pattern by a single-layer organic resist. The method is common. Further, in order to improve sensitivity and reduce absorption in a short wavelength region, a chemically amplified resist using an acid catalyzed reaction has been proposed.

As a method for improving problems caused by an increase in the level difference of the underlayer caused by the three-dimensionalization of the device due to the high integration, a decrease in the depth of focus with the increase in resolution, and a dimensional variation due to substrate reflection, a so-called multilayer resist is used. A pattern forming method has been proposed. A two-layer resist method using a silicon-containing resist has been proposed as a simplified method of the above-mentioned multilayer resist method. As the silicon-containing resist, for example, a chemically amplified resist in which an acid generator or a base generator is added to siloxane, a polysilane film containing a photosensitizer, a polysilane film formed by plasma CVD, and the like are known.

Further, in forming a pattern of gates, wirings, capacitors, etc., when dry etching resistance is insufficient with an organic resist mask, first a SiO ₂ film is formed, and then the single layer organic film is used for patterning. Forming, SiO
_A method (a hard mask method) is known in which a pattern is transferred to _two films and then the underlying metal is processed using this as a mask.

These various conventional pattern forming methods using resists are discussed in, for example, "Resist Material / Process Technology" published by Technical Information Association, Chapter 1, Sections 1 to 5.

[0008]

In the pattern formation method using the single-layer organic resist described above, in order to secure the resist film thickness necessary for anisotropic dry etching of the underlayer, the resist shape has a high aspect ratio with miniaturization. ing. Therefore, problems such as resist pattern collapse during development and microloading effect during etching occur. Furthermore, due to multiple interference in the resist film during exposure,
The dimensional variation of the pattern occurs due to the variation of the resist film thickness. Further, although the phenol resin-based resist has a high resistance to dry etching, if the wavelength is 250 nm or less, the absorption of the benzene ring is strong and pattern formation becomes difficult. On the other hand, an acrylic resin resist transparent to 190 nm lacks in dry etching resistance.

The chemically amplified resist has problems that a surface insolubilized layer is formed after exposure due to a slight amount of contamination such as amine in the air, and the resist sensitivity depends on the standing time in the air. Further, since the catalytic reaction is caused by the heat treatment (PEB) after the exposure, the sensitivity and the size largely vary due to the fluctuation of the PEB condition. Further, since the acid catalyst generated in the exposed portion diffuses in the resist, there is a problem in pattern shape controllability and size controllability.

The pattern forming method using the multi-layer resist has problems such as an increase in cost, a decrease in throughput and a decrease in yield due to the complicated process. Further, in recent years, introduction of a flattening process has been considered for the wiring process and the like, and in that case, there is no advantage of the multilayer except for the problem of reflection. Further, the polysilane, polysilene and the like are generally difficult to synthesize, and when plasma CVD is used for film formation, an increase in cost and a decrease in throughput are unavoidable as compared with the conventional spin coating. Further, the metal pattern formation by the SiO ₂ hard mask method is
Similar to the multi-layer resist method, the process is complicated and there is a problem in throughput.

An object of the present invention is to provide a novel pattern forming method which has high resolution performance and extremely high dry etch resistance and therefore can solve various problems in the above-mentioned single layer organic resist method. is there.

Another object of the present invention is to solve the problems of the chemically amplified resist, and to provide a large process latitude.
It is to provide a pattern forming method having excellent dimensional controllability.

Further, a third object of the present invention is to solve the problems of the pattern forming method using the multilayer resist and the pattern forming method using the hard mask, and to provide a pattern forming method having a small number of steps and a low cost and a high throughput. To do.

[0014]

The above-mentioned object is to achieve Si-O bond and Si formed on a substrate having a material to be processed on its surface.
-A light-sensitive material containing 80% by weight or more of a polymer or oligomer compound having an aromatic functional group bond or a mixture thereof is selectively exposed to light having a wavelength of 250 nm or less in the air or an oxygen atmosphere to expose the exposed portion. Is photo-oxidized and developed to form a resist pattern by selectively removing the exposed portion or other portions.

The material to be processed can be etched using the resist pattern. In that case, it is desirable to use a resist pattern in which the ratio of the number of O atoms to the number of Si atoms is 1: 1 or more.

As the resist, for example, compounds represented by the general formulas 1 to 3 can be used. High sensitivity can be obtained by introducing a functional group having a light absorption peak at the exposure wavelength into a side chain by a chemical bond having an activation energy smaller than the energy at the exposure wavelength. Moreover, you may add the compound which generate | occur | produces a radical by light irradiation. Further, it is desirable to use a material having a ratio of the number of O atoms to the number of Si atoms of 1: 1 or more.

[0017]

[Chemical 4]

[0018]

Embedded image

[0019]

[Chemical 6]

As the exposure light, light having a wavelength of 250 nm or less, for example, ArF excimer laser or F ₂ excimer laser can be used. Oxygen partial pressure is 1 Torr
Photooxidation can be efficiently performed by performing it in an atmosphere of ˜760 Torr.

The above-mentioned development is carried out by wet development using a polar organic solvent or the like. Alternatively, dry development using plasma may be performed.

After the above pattern exposure, heating at the exposed portion can accelerate the oxidation of the exposed portion. Further, by exposing the resist pattern after the development to an oxygen plasma atmosphere by using oxygen reactive ion etching or the like, organic substances remaining in the resist pattern can be removed. Similar effects can be obtained by irradiating with a short wavelength light source of 300 nm or less.

The above etching is generally performed by dry etching, photo-assisted etching, or the like.
Wet etching may be used. The resist film is preferably formed to have an aspect ratio of 3 or less with respect to the minimum dimension of a desired pattern.

The material to be processed is an organic material, a metal or the like, and it is desirable that the material is flattened. In particular, the present invention is suitable for processing gates, wirings, capacitors, etc. in MOS semiconductors.

[0025]

The operation of the present invention will be described with reference to FIG. For example, polyphenylsilsesquiosane (hereinafter [WS
i]) is spin-coated on a substrate 1 having a material to be processed on its surface to form a resist film 2 (FIG. 1A).
When pattern exposure is performed with an excimer laser beam 3 or the like in the air or an oxygen atmosphere, the light energy is absorbed by the benzene ring 5 in the polyphenylsilsesquioxane molecule 4 and the bond of the Si-phenyl group is cleaved, resulting in reactivity. Abundant radicals 6 (hereinafter referred to as [W-Si].) Are generated (FIG. 1 (b)).

[W-Si] + light energy> [W-Si]. Oxygen molecules or oxygen radicals or ozone (hereinafter referred to as O.) 7 generated by irradiation with short wavelength light are present in the resist. The above radicals react with oxygen radicals. Finally, the adjacent polyphenylsilsesquioxane molecules are bonded via oxygen atoms, and the exposed portion is converted to SiO ₂ (FIG. 1 (c)).

2 [W-Si]. + O.> [W-Si]
-O- [W-Si] The above is the model of the photooxidation reaction.

FIG. 2 shows the experimental results of the Fourier infrared absorption spectrum of the above resist before and after exposure. Exposure reduces the absorption of the phenyl group -Si, while Si
It can be seen that the absorption of —O is large and the above chemical reaction is occurring.

The pattern portion converted into SiO ₂ by exposure becomes insoluble in an organic solvent or an alkaline solvent when the number of Si—O bonds increases by 3% and three-dimensional network formation proceeds. Therefore, the negative resist pattern 8 can be obtained by developing using these solvents (FIG. 1D).

Further, since SiO ₂ generated by exposure is soluble in the hydrofluoric acid aqueous solution and the unexposed portion containing the organic matter is insoluble, a positive resist pattern can be obtained by developing with the hydrofluoric acid aqueous solution.

When the underlying layer is dry-etched using the SiO ₂ film formed as described above as a mask, the bond energy of Si--O bond is very large. Therefore, it is an order of magnitude larger than that when a conventional resist made of an organic material is used as a mask. As a result, a high selection ratio can be obtained. Therefore, this pattern forming method is also suitable for processing a metal film having low dry etching reactivity.

In the above description, the case where a benzene ring is introduced into the side chain of the silsesquioxane polymer or oligomer has been described, but various other cases are possible. A polymer mainly having a siloxane structure, or a benzene ring derivative is introduced into the functional group of the oligomer, or a benzene ring derivative is introduced into the main chain at an appropriate ratio, or a polymer containing the benzene ring derivative and a polymer not containing the benzene ring derivative, for example, side chains. It is also possible to use a resist in which siloxane having a methyl group in the chain is mixed at an appropriate ratio. Further, a radical generator X (hereinafter [X'-
Z]) is added to the above resist.

The action of the resist containing the radical generator X will be described using the methylsilsesquioxane polymer 9 as an example with reference to FIG. 3 and the formula.

A film is formed by spin coating the resist 11 in the radical generator X10 on a substrate 12 having a material to be processed on its surface (FIG. 3A). When pattern exposure is performed using ArF excimer laser light 3 or the like, light energy is absorbed by the radical generator in the exposed portion resist film,
Radicals 13 (hereinafter referred to as Z.) are generated (see FIG. 3).
(B)).

[X′-Z] + light energy> [X ′] · + Z · Si—CH ₃ bond in the side chain of the methylsilsesquioxane polymer molecule (hereinafter referred to as “Y-Si”) near To generate a radical (hereinafter referred to as [Y-Si].) (FIG. 3 (c)).

[Y-Si] + Z.> [Y-Si]. Oxygen molecules and oxygen radicals generated by light energy,
Ozone (denoted as O.) 7 etc. undergoes a chemical reaction to form Si-O-Si bonds between silsesquioxane polymers,
The exposed portion is converted to SiO ₂ (FIG. 3 (d)).

2 [Y-Si] · + O ·> [Y-Si]
-O- [Y-Si] Negative mold 14 and positive mold development are performed using the above-mentioned developing method (FIG.4 (e)). A silicon-containing resist can be used within a range that does not change the gist of the present invention.

The resist film thickness required for dry etching is determined depending on the material to be processed and the size to be processed. However, in order to obtain a preferable dry etching shape, it is preferable that the resist has a transmittance of 60% or more with respect to the exposure wavelength. The transmittance of the above resist can be adjusted to any film thickness. In addition, spin coating can be easily performed, and a desired film thickness can be obtained by changing the concentration with respect to the solvent.

ArF and KrF excimer lasers and the like can be considered as the exposure light source, but particularly in the wavelength region of 220 nm or less, the absorption coefficient of the benzene ring or a substance having a double bond is high. The wavelength of the ArF excimer laser (λ = 193 nm) almost coincides with the absorption peak of the benzene ring. Therefore, the exposure energy is selectively absorbed by the benzene ring and the like. On the other hand, the photon energy of the ArF excimer laser is about 6.1 eV. The energy absorbed by the benzene ring in the resist film is Si
Since the binding energy of -O is smaller than 8.3 eV, Si
The probability of breaking the -O bond is small. However, since the bond energy of Si-C bond is 4.5 eV and the bond energy of Si-H is 3.24 eV, the probability of breaking these bonds is high. For this reason, as the exposure amount is increased, the organic content in the resist film decreases, and finally becomes SiO ₂ .

Furthermore, light of these short wavelengths such as ArF is used.
The excimer laser produces more oxygen radicals and ozone than oxygen molecules in the air. The shorter the wavelength of light, the more active substances such as oxygen radicals are produced, so
It is considered that the conversion to SiO ₂ proceeds more efficiently.

Incidentally, when the organic content in the resist film is reduced by the exposure, volume contraction may occur. Therefore, in order to prevent cracks, pattern distortions, dimensional fluctuations, and the like due to stress in the resist, it is desirable to perform surface treatment that enhances the adhesion between the workpiece and the resist.

If necessary, the organic material remaining on the SiO ₂ patterned portion can be removed by oxygen ashing, O ₂ reactive ion etching, heat treatment, or the like.

When the organic material is removed by the heat treatment after the exposure, an acid is generated from the radical generator, which acts as an acid catalyst to cause a dehydration condensation reaction with the silanol group present in the resist, which is a chemical amplification reaction. There is a possibility that caution is required.

Since the above resist contains 80% by weight or more of a polymer or oligomer having a Si--O bond or a mixture of polymers or oligomers having a Si--O bond, it has high dry etching resistance. In particular, a material in which the number of O atoms with respect to the number of Si atoms is 1: 1 or more, the dry etching resistance is significantly improved.

[0045]

【Example】

Example 1 A 5% by weight solution of polyphenylmethylsilsesquioxane in ethyl cellosolve was spun on a polysilicon film having a thickness of 0.2 μm formed on a silicon substrate by CVD under the conditions of 4000 rpm and 60 seconds. After coating, it was heat-treated at 80 ° C. for 3 minutes to form a resist film having a thickness of 60 nm. On the above substrate, an ArF excimer laser exposure device (NA = 0.55) was used to change the thickness from 0.1 μm to 1
A pattern with dimensions of μm was exposed. It was developed with methanol for 30 seconds, washed with water, and heat-treated at 100 ° C. for 40 seconds. As a result of observing the pattern exposure portion with a scanning electron microscope, the dimension was 0.1 μm for a laser irradiation amount of 40 mJ / cm ² .
It was confirmed that a resist pattern having a thickness of about 50 nm was formed. Using the resist pattern as a mask, C
In l ₂ gas, it was ECRμ wave plasma etching of the underlying. As a result of observing the cross-sectional shape of the substrate with an SEM, the selection ratio of the resist pattern to polysilicon is 3
About 0, the etching shape was good.

In this embodiment, polymethylphenylsilsesquioxane was used for the resist, but it is not limited to this as long as it is a substance having a siloxane bond and has an appropriate absorption coefficient and sensitivity. It is also possible to use a resist having an appropriate transmittance adjusted by mixing a substance having strong absorption and a substance having small absorption.

For example, when exposing with an ArF excimer laser, a resist containing a 4: 1 mixture of polymethylsilsesquioxane and polyphenylsilsesquioxane has a transmittance of 70% at a film thickness of 0.1 μm. It has a high sensitivity of 40 mJ / cm ² .

When a resist material other than this embodiment is used, more effective pattern formation can be achieved by appropriately selecting the conditions such as the resist solvent, the concentration with respect to the resist solvent, the spin coating time and the spin rate, the developing solution and the developing time. You can

In this embodiment, the ArF excimer laser was used for exposure, but any other short wavelength light source may be used. Cl ₂ was used as an etching gas, but any gas known as an etching gas for polysilicon is not included in this embodiment. For example, CF ₄ (+ O ₂ ),
Fluorine-based or bromine-based gas such as HBr (+ O ₂ ) may be used. Further, similarly to the present embodiment, it is possible to form a pattern of a P-doped Si substrate, a silicon substrate, amorphous silicon or the like.

Example 2 Polyhydroxybenzylsilsesquioxane and trichlorophenol (radical generator) were mixed in a weight ratio of 3: 1 to prepare a 10% ethyl cellosolve solution. A thermal oxide film of 0.1 μm is formed on a Si substrate, and a W film with a film thickness of 50 nm is formed by sputtering.
A Cu film having a thickness of 0.5 μm was formed thereon. The resist was spin-coated on the substrate at 2000 rpm for 60 seconds to form a resist film having a film thickness of 200 nm. Then Example 1
Perform KrF excimer laser exposure in the same manner as
It was developed with AH (tetramethylammonium hydroxide). As a result, a pattern of the Si oxide film containing organic substances was formed. Using the above pattern as a mask,
The substrate was dry etched with Cl ₂ . As a result of observing the etching shape with a scanning electron microscope, Cu of 0.2μ
It was confirmed that a pattern of m width could be formed.

In this embodiment, trichlorophenol was used as the radical generator, but it is not limited to this as long as it can generate radicals by exposure. For example, chlorine-based compounds, bromine-based compounds, iodine-based compounds and the like can be considered, but the mixing ratio with the silicon-containing polymer must be adjusted according to the absorption coefficient of the compound used.
Any gas known as a gas for dry etching Cu, which is not caught in this embodiment, may be used. For example Cl (+
It is also possible to use a chlorine-based etching gas such as O ₂ ).

Example 3 An Al—Si film having a thickness of 0.5 μm was formed by sputtering on a Si substrate on which a thermal oxide film having a thickness of 0.1 μm had been formed. Thereafter, in the same manner as in Example 1, a resist was applied, exposed, and developed to form a resist pattern, and then dry etching was performed using CF ₄ (+ Cl ₂ ) as an etching gas. As a result of observing the etching shape with a scanning electron microscope, it was confirmed that a pattern having a width of 0.2 μm could be formed.

Similar to the first embodiment, the resist material and the exposure light source are not limited to those in this embodiment. For example, an etching gas such as BCl ₃ + Cl ₂ (+ CF ₄ ) can be used.

Example 4 A film thickness of 0.5 μm on a Si substrate
Of polyimide film was formed. Then, as in Example 1,
A resist was applied, exposed and developed to form a resist pattern, and then O ₂ reactive ion etching was performed. The selection ratio between the resist pattern and the polyimide film was 50 or more. As a result of observing the etching shape with a scanning electron microscope, it was confirmed that a pattern having a width of 0.2 μm could be formed.

The organic film pattern can be formed in the same manner as in this embodiment.

Example 5 A Pt film having a thickness of 0.2 μm and a TiN film having a thickness of 0.2 μm were formed on a Si substrate by sputtering. Thereafter, a resist is applied in the same manner as in Example 2,
After exposing and developing to form a resist pattern,
After the TiN film was dry-etched using Cl ₂ etching gas to transfer the pattern, Pt was dry-etched using CF ₄ (+ O ₂ ) as an etching gas. The selection ratio between the resist pattern and TiN was about 6. As a result of observing the etching shape with a scanning electron microscope,
It was confirmed that a pattern having a width of 2 μm could be formed.

As with the first embodiment, the resist material and the exposure light source are not limited to those in this embodiment. For example, Cl ₂ , HBr, or the like can be used as the etching gas.

Example 6 A film thickness of 0.1 μm on a Si substrate
Si ₃ N ₄ film was formed. Thereafter, in the same manner as in Example 1, a resist was applied, exposed and developed to form a resist pattern, and then dry etching was performed using CF ₄ (+ O ₂ ) as an etching gas. As a result of observing the etching shape with a scanning electron microscope, it was confirmed that a pattern having a width of 0.2 μm could be formed.

Example 7 A film thickness of 0.5 μm on a Si substrate
W film was formed. Thereafter, in the same manner as in Example 1, a resist was applied, exposed and developed to form a resist pattern, and then dry etching was performed using CF ₄ (+ O ₂ ) as an etching gas. As a result of observing the etching shape with a scanning electron microscope, it was confirmed that a pattern having a width of 0.2 μm could be formed. The selection ratio between the resist film and the W film was about 10.

As in the first embodiment, the resist material and the exposure light source are not limited to those in this embodiment. SF ₆
Although dry etching can be performed by using, it is necessary to change the conditions and optimize.

In the same manner as this embodiment, a pattern of W-Si, Mo film or the like can be formed.

In each of the above embodiments, the material to be processed, the type of resist, the exposure method, the development method, the etching method, etc. can be freely changed without changing the gist of the present invention. In that case, resist film thickness, coating conditions,
It is necessary to change and optimize conditions such as etching gas.

[0063]

As described above, according to the present invention, a silicon-containing resist film formed on a substrate having a material to be processed on its surface is selectively irradiated with light in the air or an oxygen atmosphere to photo-oxidize an exposed portion. Then, this is developed to selectively remove the photooxidized portion or other portions to form a resist pattern, and by using this as a mask, the material to be processed is etched to obtain high resolution performance. In addition, it is possible to form a pattern having a high dry etch resistance, an excellent dimensional controllability, a small number of steps and a low cost and a high throughput.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing the principle of the present invention.

FIG. 2 is a measurement diagram of Fourier infrared absorption of polyphenylsilsesquioxane before and after exposure.

FIG. 3 is a schematic diagram showing the principle of the present invention.

[Explanation of symbols]

1 ... Substrate having work material on its surface, 2 ... Resist film, 3
... exposure light, 4 ... polyphenylsilsesquioxane molecule,
5 ... Benzene ring, 6 ... Phenylsilsesquioxane molecule radical, 7 ... Oxygen radical or oxygen molecule, or ozone, 8 ... Resist pattern, 9 ... Polymethylsilsesquioxane, 10 ... Radical generator, 11 ... Resist film,
12 ... Substrate having work material on surface, 13 ... Radical,
14 ... Resist pattern.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI Technical display area G03F 7/30 G03F 7/30 7/36 7/36 7/38 512 7/38 512 7/40 521 7/40 521 H01L 21/027 H01L 21/312 C 21/3065 21/30 568 21/312 569E 569H 570 571 21/302 H

Claims (22)

[Claims] 1. A method for forming a pattern by selectively irradiating light on a substrate having a work material on its surface, comprising:
Polymer or oligomer having O bond and Si-aromatic functional group bond, or polymer having S—O bond and S
A photosensitive material containing 80% by weight or more of a mixture of polymers or oligomers having i-aromatic functional group bonds,
A resist film is formed on the substrate by a spin coating method, and the resist film is selectively exposed to light of a wavelength of 250 nm or less in the air or an oxygen atmosphere to expose the Si—O of the exposed portion. A pattern forming method comprising increasing the number of bonds by 3% or more, developing the resist film to selectively remove the exposed portion or the resist film other than the exposed portion to form a resist pattern. 2. The pattern forming method according to claim 1, wherein the material to be processed is etched using the resist pattern as a mask. 3. The polymer or oligomer as a main component of the photosensitive material has a ratio of the number of O atoms to the number of Si atoms of 1 :.
The pattern forming method according to claim 1, wherein the number is 1 or more. 4. The pattern forming method according to claim 1, wherein the ratio of the number of O atoms to the number of Si atoms in the resist pattern after the development is 1: 1 or more. 5. The resist is represented by chemical formula 1 or chemical formula 2.
Or, the general formula of Chemical Formula 3 (wherein R is an alcohol group, an aromatic group, an alkyl group, or a hydroxyl group,
2. The compound represented by the formula (not necessarily the same in the same molecule), or a mixture thereof, wherein at least any one of R is an aromatic group. Pattern formation method. Embedded image Embedded image Embedded image 6. The pattern forming method according to claim 1, wherein the resist contains a compound that generates radicals by light irradiation. 7. The pattern forming method according to claim 1, wherein the resist does not contain a compound that generates an acid or a base upon irradiation with light. 8. The exposure is an ArF excimer laser or
7. The pattern forming method according to claim 6, wherein the light source is an F ₂ excimer laser. 9. The exposure is carried out at an oxygen partial pressure of 1 Torr to 760 Ton.
The pattern forming method according to claim 1, wherein the pattern forming method is performed in an atmosphere of rr. 10. The pattern forming method according to claim 1, wherein the development is performed by using a polar organic solvent, a nonpolar organic solvent, an alkaline solution, a neutral solution, or an acidic solution. . 11. The pattern forming method according to claim 1, wherein the development is performed by dry development using plasma. 12. The pattern forming method according to claim 1, wherein the substrate is heated after the pattern exposure. 13. The pattern forming method according to claim 1, wherein after the development, the resist pattern is exposed to an oxygen plasma atmosphere. 14. The pattern forming method according to claim 1, wherein after the development, the resist pattern is subjected to oxygen reactive ion etching, ashing, or irradiation with light of 300 nm or less. 15. The pattern forming method according to claim 2, wherein the etching is performed by dry etching or photo-assisted etching. 16. The pattern forming method according to claim 2, wherein the substrate is a substrate having a surface to be processed which has been flattened. 17. The pattern forming method according to claim 2, wherein the material to be processed is an organic material, a metal, a semiconductor, or an oxide thereof. 18. The pattern forming method according to claim 2, wherein the material to be processed is any one of a gate, a wiring, and a capacitor film in a MOS device. 19. The silicon-containing material, which is a main component of the resist film, has a functional group having an absorption peak at an exposure wavelength introduced into a side chain by a chemical bond having an activation energy smaller than the energy at the exposure wavelength. The pattern forming method according to claim 1, wherein the pattern forming method is a material. 20. The resist film comprises a benzene ring or a benzene ring derivative so that the transmittance at the exposure wavelength is 60% or more with respect to a desired resist film thickness. The pattern forming method according to claim 1, which is a resist introduced into a chain. 21. The pattern forming method according to claim 1, wherein the resist film is formed with a film thickness having an aspect ratio of 3 or less with respect to a minimum dimension of a desired pattern. 22. The chemical formula 1 or chemical formula 2 or the general formula 3 of the chemical formula 3 according to claim 5 (wherein R is an alcohol group, an aromatic group, an alkyl group or a hydroxyl group, and the same molecule) Which are not necessarily the same in the above), or a mixture thereof, wherein at least one of Rs is an aromatic group.